Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

Institute of Advanced Engineering and Science

Fatimah Arofiati Noor, Ferry Iskandar, Mikrajuddin Abdullah, Khairurrijal khairurrijal,

Indonesian Journal of Electrical Engineering and Computer Science, Vol 10, No 3: July 2012 , pp. 477-485

Abstract

In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents. DOI: http://dx.doi.org/10.11591/telkomnika.v10i3.607

: high-? dielectric stack; anisotropic mass; gate velocity; tunneling current; transfer matrix method

Publisher: Institute of Advanced Engineering and Science

Publish Date: 2012-05-05

Publish Year: 2012

ipmuGoDigital Library

Copyright © 2021 IpmuGo Digital Library.

All Right Reserved

Support

Help Center

Privacy Policy

Terms of Service