Indonesi
an
Journa
l
of El
ect
ri
cal Engineer
ing
an
d
Comp
ut
er
Scie
nce
Vo
l.
1
4
,
No.
1
,
A
pr
il
201
9
, p
p.
407
~
412
IS
S
N: 25
02
-
4752, DO
I: 10
.11
591/ijeecs
.v1
4
.i
1
.pp
407
-
412
407
Journ
al h
om
e
page
:
http:
//
ia
es
core.c
om/j
ourn
als/i
ndex.
ph
p/ij
eecs
Linea
rity imp
ro
ve
m
ent of diff
er
ential C
MOS
low nois
e ampl
ifie
r
Ma
iz
an
Muha
mad
1
,
Norh
ay
at
i
So
in
2
,
H
arikrishna
n
Ram
iah
3
1
Facul
t
y
of
El
e
ctrical
Eng
ineeri
n
g,
Univer
si
ti Te
k
nologi
MA
RA,
ShahAlam
,
Mal
a
y
sia
1,
2
,3
Fa
cul
t
y
of
En
gine
er
ing, Univers
ity
of
Ma
lay
a
,
Kuala
Lumpur
,
Malay
s
ia
Art
ic
le
In
f
o
ABSTR
A
CT
Art
ic
le
history:
Re
cei
ved
Sep
30
, 201
8
Re
vised
N
ov
27
, 2
018
Accepte
d
Dec
1
5,
2018
Thi
s
pape
r
pr
ese
nts
the
li
ne
ari
t
y
improvem
ent
of
diffe
re
n
ti
a
l
CMO
S
low
noise
amplif
ie
r
int
egr
at
ed
ci
r
cuit
using
0.
13um
CMO
S
te
chnol
o
g
y
.
In
thi
s
stud
y
,
inductiv
e
l
y
dege
n
erate
d
comm
on
source
topol
og
y
is
a
dopte
d
for
wire
le
ss
LAN
appl
i
ca
t
ion.
Th
e
li
ne
arit
y
of
t
he
single
-
ende
d
LNA
was
improved
b
y
using
differential
struct
ure
s
with
opti
m
um
bia
sing
te
chn
ique.
Thi
s
t
ec
hniqu
e
a
chi
ev
ed
b
et
t
er
L
NA
and
li
n
ea
r
ity
per
form
ance
co
m
par
e
with
single
-
end
ed
struct
ure
.
Sim
ula
tion
was
m
ade
by
using
the
cad
enc
e
spec
tre
RF
tool
.
C
onsum
ing
5.
8m
A
cur
re
nt
a
t
1.
2V
suppl
y
vo
lt
ag
e,
t
he
designe
d
LNA
exhi
bit
s
S21
gai
n
of
18.
56
dB,
noise
figure
(NF
)
of
1.
85
dB,
S11
of
−27.
63
dB
,
S22
of
-
34.
33
dB,
S12 of
−37
.
09
dB
a
nd
IIP3 of
-
7
.
79
dBm
.
Ke
yw
or
d
s
:
CM
OS
Diff
e
re
ntial
Linearit
y
Lo
w no
ise
am
plifie
r
(LNA
)
No
ise
f
ig
ure
(
NF
)
Copyright
©
201
9
Instit
ut
e
o
f Ad
vanc
ed
Engi
n
ee
r
ing
and
S
cienc
e
.
Al
l
rights re
serv
ed
.
Corres
pond
in
g
Aut
h
or
:
Ma
iz
an
Mu
ha
m
ad
,
Faculty
of Elec
tric
al
Engineer
ing
,
Un
i
ver
sit
i Te
knol
og
i M
ARA
,
40450, S
ha
hA
l
a
m
,
Ma
la
ysi
a
.
Em
a
il
:
m
ai
zan@salam
.u
itm
.e
du.m
y
1.
INTROD
U
CTION
Nowa
days,
co
m
ple
m
entary
m
et
al
ox
ide
se
m
ic
on
duct
or
(
CM
OS
)
wi
del
y
us
ed
in
desi
gn
i
ng
wireless
syst
e
m
becau
s
e
of
the
l
ow
c
ost
and
easy
int
egr
at
io
n.
L
ow
no
ise
am
plifie
r
(LNA)
is
t
he
f
irst
bu
il
di
ng
bl
ock
i
n
the
wi
reless
s
yst
e
m
.
Its
m
a
i
n
pur
po
se
is
t
o
pro
vid
e
gai
n
wh
il
e
with
m
ini
m
u
m
no
ise
as
po
s
sible
to
th
e
netw
ork.
As
the
first
act
ive
blo
c
k
i
n
t
he
receiver
c
hain,
the
perform
a
nce
of
an
LN
A
c
on
t
ro
ls
t
he
overal
l
perform
ance
of
rec
ei
ve
rs.
N
oise
pe
rfor
m
ance
an
d
powe
r
gain
a
re
the
m
os
t
i
m
po
rtant
char
act
erist
ic
s
of
a
n
LNA.
Be
side
these
cha
racteri
sti
cs,
the
m
ai
n
par
am
et
ers
affe
ct
ing
the
sel
e
ct
ion
of
a
pro
pe
r
ci
rcu
it
for
a
n
LN
A
are
DC po
wer
consum
ption
,
band
width, sta
bili
ty
, linearit
y,
s
up
ply v
oltag
e an
d
c
hip
a
rea
.
Eve
n
thou
gh
si
ng
le
-
en
d
L
NA
input
sta
ge
co
nsum
es
le
ss
po
wer
a
nd
t
he
act
ive
chip
a
rea
c
on
s
um
ption
is
m
ini
m
u
m
,
di
ff
e
ren
ti
al
topol
og
y
is
pref
er
re
d
f
or
t
he
f
ollo
wing
im
po
rtan
t
issues
[
1
]
.
Since
the
n
oise
figure
is
the
crit
ic
al
fact
or
f
or
the
L
N
A
,
by
us
in
g
di
ff
e
ren
ti
al
sig
na
ll
ing
ca
n
offer
bette
r
no
ise
pe
rfor
m
ance
due
to
the
abili
ty
of
rej
e
ct
ing
the
c
omm
on
-
m
od
e
no
i
se.
The
oret
ic
al
ly
,
the
two
si
des
of
the
ci
r
cuit
are
ide
ntica
ll
y
m
at
ched
an
d
there
fore
the
co
m
m
on
-
m
od
e
noise
of
eac
h
side
can
be
vie
wed
as
the
sa
m
e.
Secondly
,
no
t
only
lim
it
ing
towa
r
ds
the
noise
but
al
so
f
or
the
li
near
it
y
per
f
or
m
ance,
the
diff
e
re
ntial
m
od
e
am
plifie
r
e
xh
i
bits
bette
r
pe
rfo
rm
ance
[
2
]
.
Du
e
to
the
in
he
ren
t
ci
rcu
it
arc
hitec
ture
wh
ic
h
is
sy
m
m
e
tric
al
,
the
nat
ur
e
a
bili
ty
of
cancel
li
ng the
even
-
order dist
or
ti
ons i
ncr
eas
es the li
nea
rity
o
f
the am
plifie
r.
The
si
gn
al
t
o
noise
will
be
de
gr
a
de
d
due
t
o
t
he
ins
uffici
ent
li
near
it
y
of
a
L
NA.
T
her
e
fore
,
ha
ving
a
high
li
near
it
y,
II
P
3
L
N
A
can
reduce
the
de
gradati
on
of
ca
r
rier
to
noise
[
3
]
.
This
li
near
it
y
sh
ould
not
be
at
the
exp
e
ns
es
of
ga
in or
noise
f
i
gure, NF.
In
integ
rated
a
nalo
gu
e
el
ect
r
on
ic
s
an
d
espe
ci
al
ly
in
RF
app
li
cat
ion
s,
a
f
ul
ly
diff
eren
ti
al
appr
oach
is
us
ua
ll
y
pr
ef
er
r
ed,
due
to
it
s
well
-
kn
own
prop
e
rtie
s
of
im
m
un
it
y
to
com
m
on
-
m
od
e
disturba
nces,
re
j
ec
ti
on
to
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2502
-
4752
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci,
Vo
l.
1
4
, N
o.
1
,
A
pr
il
201
9
:
407
–
412
408
par
asi
ti
c
co
upli
ng
s
a
nd
inc
rea
sed
dynam
ic
ran
ge
[
3
]
.
Alt
hough
t
he
diff
e
re
ntial
op
e
rati
on m
us
t
be
pr
ese
r
ved
in
the
chi
p,
t
her
e
are
cases
w
here
the
in
put
sig
nal
is
sin
gle
-
e
nded
suc
h
as
R
F
im
age
filt
ers
an
d
I
F
filt
er
s
in
a
R
F
receiver
.
In
ad
diti
on
,
the
re
a
re
ci
rc
uits
that
require
di
ff
e
r
entia
l
sign
al
s
t
o
perform
their
f
unct
ion.
I
n
these
sit
uations
,
a
sta
ge
w
hich
ca
n
conve
rt
sing
le
-
end
e
d
to
dif
fere
ntial
sign
al
s
is
needed
.
Seve
ral
highly
integrate
d
direct
-
c
onve
rsi
on
CM
OS
fro
nt
-
en
ds
ac
hieve
high
perform
a
nce,
but
at
the
cost
of
requiri
ng
a
f
ully
dif
fe
ren
ti
al
LNA
t
hat
nee
ds
tw
o
RF
in
pu
t
pin
s
a
nd
a
n
exte
rn
al
RF
sing
le
-
e
nded
to
dif
fer
e
ntial
conve
rsion
[
4
]
.
Thi
s
ty
pical
ly
req
ui
res
sp
eci
al
fro
nt
-
e
nd
filt
ers
or
an
ad
diti
on
al
of
f
-
chi
p
balu
n,
wh
ic
h
can
in
cur
ext
ra
loss
and
ca
n
degr
a
de
the
syst
e
m
n
oise
fig
ure
[
5,
6
]
.
2.
RESEA
R
CH MET
HO
D
The
LN
A
is
to
be
desig
ne
d
with
the
f
ollow
i
ng
pr
opos
e
d
s
pecifica
ti
on
su
m
m
arized
in
Ta
ble
1.
Gen
e
rall
y,
the
0.13
µm
CM
OS
LN
A
is
to
be
desig
ned
s
uc
h
as
to
com
ply
with
the
wi
reless
local
area
ne
twor
k
(
W
L
A
N)
sp
e
ci
ficat
ion
s
w
hereby
the
L
NA
needs
to
pr
ov
i
de
a
hi
gh
ga
in
with
l
ow
noise
fig
ure
at
l
ow
powe
r,
with it
s ce
ntre op
e
rati
ng fre
quency at
2.4 G
H
z.
Table
1.
L
N
A Desig
n
S
pecifi
cat
ion
for WL
AN Stan
da
rd
Para
m
eter
Tar
g
et sp
ecif
icatio
n
CMOS P
rocess
tec
h
n
o
lo
g
y
0
.13
µ
m
Frequ
en
cy
ban
d
2
.4 GHz
Po
wer
su
p
p
ly
≤ 1.2
V
Gain
,
S
21
> 15
dB
Inp
u
t
m
atch
in
g
(
S
11
)
<
-
1
2
dB
This
LN
A
is
con
st
ru
ct
e
d
us
i
ng
an
in
duct
ively
deg
en
erated
casco
de
topolo
gy.
The
casc
od
e
top
ol
ogy
is
ad
op
te
d
as
it
pro
vid
es
h
ig
h
gain
an
d
good input
-
ou
t
pu
t
is
olati
on
,
w
hic
h
i
m
pr
ove
ci
rc
ui
t
desig
n
sta
bili
ty
an
d
al
so
sim
plify
i
nput
m
at
ching
.
The
sim
plified
sc
hem
at
ic
of
th
e
pro
posed
CM
OS
L
NA
f
or
noise
optim
iz
at
io
n
and
gain
e
nha
nc
e
m
ent
is
il
lust
rated
in
Fig
ur
e
1(
a
)
an
d
th
e
sim
pl
ifie
d
sm
all
-
sig
nal
eq
uiv
al
ent
ci
rcu
it
is
s
how
n
in Figu
re
1(b)
wh
e
re
V
RF
an
d R
S
m
od
el
the
anten
na.
I
nd
uctivel
y
de
gen
e
rated
t
opol
og
y
has
the
a
dv
a
ntage
of
be
tt
er
con
t
ro
l
over
the
value
of
the
real
par
t
of
t
he
in
pu
t
i
m
ped
ance
.
T
he
functi
on
of
the
L
s
is
to
ge
ner
at
e
the
re
al
i
m
ped
ance
to
m
at
ch
the
input
i
m
ped
ance
to
50
Ω
a
nd
he
nc
e
good
no
ise
pe
rfor
m
ance
[
7
]
.
The
in
du
ct
iv
el
y
-
deg
e
nerat
ed
CS
LN
A
is
t
o
help
the
input
m
at
c
hing.T
he
sm
all
-
sig
nal
m
od
el
in
Fig
ur
e
1
(
b)
is
us
ed
as
a
guide
in
order
to
determ
ine
the
i
nput
i
m
ped
ance
of
t
he
ci
rcu
it
.
T
he
su
bs
e
quent
de
rivati
ons
can
il
lustrate
how
th
e
input
can
be
si
m
ply
m
at
ched
to
the
source
resi
sta
nce.
Z
in
is
a
RLC
series
network
ci
rc
uit
wi
th
a
resist
ive
te
rm
wh
ic
h
is
strai
gh
tl
y
propo
rtion
al
to the val
ue
of
the in
du
ct
a
nce.
Wh
ere
at res
onance
, th
e
r
eal
te
rm
in
Z
in
cont
ai
ns
L
s
[
8
]
Zin
=
Vg
Ig
=
I
g
R
g
+
Vc
+
j
ω
I
sL
s
Ig
Zin
=
Ls
.
gm
C
g
s
W
he
r
e
Z
in
i
s
5
0
O
hm
s
.
In
m
os
t
L
NA
desig
n
the
value
of
L
s
was
ass
um
e
d
a
nd
the
val
ue
s
of
g
m
and
C
gs
are
cal
culat
ed
bas
ed
on
the
f
orm
ula
to
fin
d
the
re
quired
f
or
Z
in
.
Co
ns
e
quently
,
in
this
input
m
a
tc
hin
g
t
he
util
iz
at
ion
of
de
gen
e
rated
i
nducto
r
is
nee
de
d.
T
his
m
ake
the
prese
nce
of
L
s
helps
in
pr
ov
i
ding
a
ri
gh
t
input
i
m
ped
ance
t
o
te
rm
inate
the
off
-
c
hip
R
F
fi
lt
er
in
the
pre
ceedin
g
the
of
the
L
NA,
in
wh
ic
h
in
the
t
ypic
al
conditi
on,nee
d
to
m
at
ch
to
50
Ω
i
m
ped
an
ce
.
W
hile
L
g
will
resonate
with
C
gs
and
it
gu
ar
antees
that
the
inp
ut
fr
e
qu
e
ncy
a
dju
ste
d
t
o
the
op
e
rati
ng
f
re
quency
of
the
app
li
cat
io
n.
H
ence
durin
g
r
eso
n
ance
,
the
source
resist
ance a
nd
oth
e
rs param
eter
ca
n be
deter
m
ined
as t
he
e
xpressi
on d
e
riv
ed belo
w
[
8
]
:
=
gm
C
g
s
=
Rs
Ls
Wh
e
re
ω
T
is de
fine
d
as a
cu
t
off fre
quency.
T
he value
of the
R
s
is 5
0 o
hm
s
=
√
1
+
(
1
p
⁄
)
Evaluation Warning : The document was created with Spire.PDF for Python.
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci
IS
S
N:
25
02
-
4752
Lineari
ty
imp
r
ovem
e
nt
of d
if
f
erenti
al CM
OS low
no
ise
amp
li
fi
er
(
Maizan
Mu
hamad
)
409
Wher
e
p
=
σ
.
a
2
5
.
γ
The param
et
ers
for
the
p
usua
ll
y dep
en
d
on t
he
RFC
MOS
T
echnolo
gy, but
ty
pical
ly
γ
is set
b
et
ween
2
-
3,
σ
is set
to
2
-
3
ti
m
es the v
al
ue of
Y an
d
t
he
α
is ass
um
ed
to b
e
0.8
-
1
[
9
]
.
Lg
=
QL
.
Rs
ω
o
.
Ls
Wh
e
re
ω
o
is t
he
center
freq
ue
ncy.
C
b
C
d
M
1
M
3
V
DD
R
1
L
d
V
IN
V
O
UT
L
g
R
S
M
2
R
2
C
gs
1
C
d
L
d
V
IN
V
O
UT
L
g
R
S
R
LD
g
m1
V
g
s
1
L
s
C
g
s
2
g
m2
V
g
s
2
Z
OUT
Z
IN
+ V
g
s
2
-
+
V
g
s
1
-
S
1
D
1/
S
2
D
2
(
a
)
(
b
)
Figure
1. Sim
plifie
d
co
nf
i
gur
at
ion
of (
a
)
the
prop
os
ed
sin
gl
e en
ded L
NA a
nd (b) t
he sm
all
-
sign
al
e
quiva
le
nt
ci
rcu
it
Figure
2
il
lust
rates
the
m
od
i
fied
diff
e
re
ntial
LNA.
T
he
c
om
bin
at
ion
tw
o
ci
rc
uit
sin
gle
en
ded
will
pro
du
ce
the
do
ub
le
en
de
d.
For
the
sa
ke
of
s
i
m
plici
t
y,
the
biasin
g
ci
rc
uit
of
di
ff
e
ren
ti
al
LNA
is
not
s
how
n.
The g
at
e
-
s
ourc
e capacit
ance
c
an be
determ
ined by bel
ow expressi
on
[
8
]
:
Cgs
=
1
ω
o
2
(
Lg
+
Ls
)
Cgs
=
2
3
Cox
.
W
.
Lmin
C
b
C
d
M
1
V
DD
L
d
V
In
+
+
V
O
UT
-
L
g
M
3
M
2
M
4
L
d
V
I
n
-
L
g
C
b
L
s
L
s
C
ex
C
ex
I
s
o
u
r
c
e
Figure
2.
I
nduc
ti
vely
d
ege
ner
a
te
d
com
m
on
s
ource
d
if
fer
e
ntia
l LN
A
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2502
-
4752
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci,
Vo
l.
1
4
, N
o.
1
,
A
pr
il
201
9
:
407
–
412
410
Wh
ic
h
the
w
i
dt
h
of tra
ns
ist
or
can
be
e
xpress
ed
as:
W
=
3
2
C
g
s
2C
ox
.
L
min
ε
ox
=
ε
ox
.
ε
o
Wh
e
re
ε
o
=
die
le
ct
ri
c
con
stant
f
orfr
ee
space
=
8
.
85
4
E
−
14
F
cm
ε
ox
=
die
le
ct
ri
c
c
onsta
nt
for
sili
con
=
3
.
9
3.
RESU
LT
S
AND
A
N
ALYSIS
Figure
3
il
lust
rates
the
sim
ulati
on
of
s
-
para
m
et
ers
an
d
noise
fig
ur
e
f
or
bo
t
h
si
ng
le
-
end
e
d
an
d
diff
e
re
ntial
LNA.
T
he
S
-
pa
ram
et
er
plo
ts
and
noise
fig
ure
p
er
form
ances
are
sho
wn
in
Fi
gure
3.
A
s
can
be
seen
f
ro
m
Figu
re
3,
the
ci
r
cuit’s
in
pu
t
a
nd
ou
t
p
ut
were
m
at
ched
to
the
50Ω
re
qu
i
red
at
the
ope
rati
ng
fr
e
qu
e
ncy
of
2.4
G
Hz.
Ba
se
f
ro
m
the
cu
r
ve,
both
str
uctur
e
s
ex
hib
it
good
perform
ance
and
sat
isfy
the
des
i
gn
requirem
ent.
The
i
nput
ret
urn
lo
ss,
S
11
is
-
24.
14
dB
and
-
27.63
dB
for
si
ng
le
-
e
nd
e
d
a
nd
differen
ti
al
resp
ect
ively
.
Wh
il
e
t
he
ou
t
pu
t
retu
r
n
los
s
,
S
22
is
-
23.47
dB
f
or
si
ng
le
end
e
d
an
d
-
34.
33
dB
f
or
di
fferentia
l
structu
re.
T
he
no
ise
fig
ure
for
sin
gle
e
nded
LN
A
is
1.8
8
dB
wh
ic
h
is
not
m
uch
diff
e
r
ent
with
diff
e
r
entia
l
structu
res
valu
e
1.85
d
B. Th
e
at
ta
in
ed
val
ue
of
N
F
is beli
ev
ed
to b
e g
oo
d
a
s
it
exceeds
t
he
requirem
ent
w
hich
is
ty
pical
ly
below
2
dB
wit
hout
hav
i
ng
t
o
trade
off
the
powe
r
gai
n
w
hich
al
s
o
sat
is
fies
the
requir
e
m
ent.
Diff
e
re
ntial
LN
A
obtai
n g
re
at
er g
ai
n,
S
21
wh
ic
h
is
18.
56
dB as c
om
par
e
d
to
si
ngle
-
e
nded 17.9
d
B
.
(a)
(b)
Figure
3. S
-
pa
r
a
m
et
ers
and no
ise
f
ig
ur
e
p
e
rfo
rm
ance: (a)
si
ngle
ende
d
L
N
A,
(b) dif
fer
e
nt
ia
l LNA
Figure
4
pr
es
ents
the
sim
ulati
on
perform
ance
of
t
h
ird
order
interce
pt
po
i
nt,
II
P
3.
I
n
or
der
t
o
si
m
ulate
the
II
P3
,
diff
e
re
nt
va
lue
of
in
put
sign
al
ne
ed
to
s
upply
to
the
ci
rcu
it
an
d
the
f
undam
ental
fr
equ
e
ncy
and
the
t
hir
d
order
inter
-
m
od
ulati
on
c
om
po
ne
nt.
The
sing
le
e
nded
L
NA
achie
ved
-
1
0.6
dBm
wh
il
e
the
diff
e
re
ntial
m
a
nag
e
to
ge
t
-
7.75
dBm
.
The
l
inearit
y
of
the
desig
ne
d
LN
A
i
m
pr
ov
e
d
dif
f
eren
ti
al
i
m
pr
ove
d
by
2.85
dBm
.
Evaluation Warning : The document was created with Spire.PDF for Python.
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci
IS
S
N:
25
02
-
4752
Lineari
ty
imp
r
ovem
e
nt
of d
if
f
erenti
al CM
OS low
no
ise
amp
li
fi
er
(
Maizan
Mu
hamad
)
411
Figure
4. Sim
ulati
on
of T
hir
d Order
Interce
pt Po
i
nt
(IIP3):
(a)
sin
gl
e end
e
d LN
A, (
b)
Dif
fer
e
ntial
LNA
Figure
5
s
hows
the
ph
ysi
cal
re
pr
ese
ntati
on (
l
ay
ou
t)
of
dif
fer
e
ntial
LNA usi
ng
6 o
ct
agonal s
piral
inducto
rs
Figure
6.
Lay
out o
f d
if
fer
e
ntial
LNA
Table
2
su
m
m
arize
the
si
m
ul
at
ion
perf
or
m
ance
com
par
iso
n
of
bo
t
h
struc
tures.
By
us
in
g
diff
ere
ntial
structu
res, t
he LNA
ac
hieve
d bett
er linea
rity
w
it
hout tra
de
off
it
s
noise
f
i
gure a
nd g
ai
n per
form
ance.
Table
2.
Per
for
m
ance co
m
par
ison o
f wit
h oth
er
publishe
d w
ork
LNA
st
ructu
re
S
11
(dB
)
S
21
(dB
)
S
12
(dB
)
S
22
(dB
)
NF (
d
B)
II
P3
(
d
B
m
)
Sin
g
le
-
en
d
ed
-
2
4
.14
1
7
.9
-
3
6
.83
-
2
3
.47
1
.88
-
1
0
.61
Dif
f
erential
-
2
7
.63
1
8
.56
-
3
7
.09
-
3
4
.33
1
.85
-
7
.79
4.
CONCL
US
I
O
N
In
this
paper,
the
de
sig
n
of
diff
e
re
ntial
LNA
are
su
cce
s
sfu
ll
y
im
ple
m
ented
us
i
ng
Si
lt
err
a
130
-
n
m
CMO
S
te
chnol
og
y
.
The
LNA
design
exhi
bit
s
hig
h
forward
gai
n
(
S
21
)
of
18.
56dB,
high
re
ver
se
isola
ti
on
(S
12
)
of
-
3
7.
0
9
dB
and
a
go
od
linear
i
t
y
IIP3
of
-
7.
79
dBm
at
2
.
4
GH
z.
T
he
LNA
show
s
a
low
NF
of
1.
85
dB.
Lin
earit
y
of
the
L
NA
is
i
m
pr
oved
by
usi
ng
diff
e
re
ntial
structur
e
s
with
opti
m
u
m
biasing
te
ch
nique
.
The
LNA
oper
a
te
s
at
1
.
2V
supply
an
d
consum
es
onl
y
7
m
W
of
power.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2502
-
4752
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci,
Vo
l.
1
4
, N
o.
1
,
A
pr
il
201
9
:
407
–
412
412
REFERE
NCE
S
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e
i
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Am
ira
badi
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A
65
nm
li
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r
broa
d
-
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r
ential
Low
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Am
pli
fie
r
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roni
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ad
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A
novel
low
-
nois
e
fully
d
iffe
r
ential
CMO
S
instrum
ent
a
ti
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amplifier
with
1.
88
noise
eff
iciency
fa
ct
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Fellow
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ne
ari
z
at
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e
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utori
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Feng
Y,
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ake
m
ura
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K
awa
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hi
S,
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Design
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a
hig
h
per
form
ance
2
-
GH
z
dire
c
t
-
con
ver
sion
front
-
en
d
with
a
si
ngle
-
en
ded
RF
inpu
t
in
0.
13
μ m
CMO
S.
IE
EE J Soli
d
-
S
ta
t
e
Cir
cui
ts
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20
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[
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]
Robens
M,
W
u
nder
lich
R,
Hei
nen
S.
Diffe
re
n
ti
al
Noise
Figu
re
De
-
Embeddi
ng:
A
Com
par
ison
of
Avail
ab
l
e
Approac
hes. IE
EE
Tra
ns Mi
cro
w T
heor
y
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–
4
07.
[
6
]
Shim
J,
Jeong
J.
A
band
-
select
iv
e
low
-
noise
ampli
fie
r
using
an
improved
tuna
b
le
a
ct
iv
e
inductor
fo
r
3
–
5
GH
z
UW
B
re
ceive
rs.
Micro
el
e
ct
roni
cs
J. 20
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)
:78
–
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[
7
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XH
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Zha
ng
H,
Mem
ber
S,
Sánche
z
-
sin
enc
i
o
E.
A
no
ise
r
e
duct
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and
l
ineari
t
y
improvem
ent
techniqu
e
for
a
diffe
re
n
ti
a
l ca
sc
ode
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IEEE J
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-
State
Cir
cui
ts.
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–
99.
[
8
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l
ec
tron
ic
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Ex
celle
n
ce
D,
Campus
E
,
No
h
NM
,
Z
ai
na
l
T,
Zul
k
ifl
i
A,
et
al.
S
y
stematic
W
idt
h
Dete
rm
ina
tion
for
the
Design
of
Pow
er
-
Constrai
ned
No
is
e
Opt
imiza
ti
on
Induc
t
ive
l
y
Deg
ene
r
ated
Low
Noise
Am
pli
fie
r.
I
ET
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ec
tron
ic
C,
Exc
e
ll
en
ce
D
,
Campus
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Sy
s
te
m
at
i
c
W
idt
h
Dete
rm
ination
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Design
of
Po
wer
-
Constrai
ned
Noise
Optimizat
ion
Induc
ti
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ner
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te
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oise
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2011
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Evaluation Warning : The document was created with Spire.PDF for Python.