Indonesi
an
Journa
l
of El
ect
ri
cal Engineer
ing
an
d
Comp
ut
er
Scie
nce
Vo
l.
9
, No
.
3
,
Ma
rch
201
8
,
pp
.
6
06
~
6
08
IS
S
N:
25
02
-
4752
, DO
I: 10
.11
591/
ijeecs
.
v9.i
3
.
pp
606
-
608
606
Journ
al
h
om
e
page
:
http:
//
ia
es
core.c
om/j
ourn
als/i
ndex.
ph
p/ij
eecs
Powe
r
o
f
Ambien
t Tempu
ratur
e
o
n
t
he P
erf
or
m
ance
o
f
i
he
Semicon
du
ctor Laser
J.
S
.
Ash
w
in
,
N.
M
anoh
aran
Depa
rtment
o
f
E
le
c
tri
c
al a
nd
Ele
ct
roni
cs
Engi
n
eering
(Mari
n
e),
A
MET
Univer
si
t
y,
Chenn
ai
,
Ind
ia
Art
ic
le
In
f
o
ABSTR
A
CT
Art
ic
le
history:
Re
cei
ved
N
ov
3
0
, 201
7
Re
vised
Feb
2
,
201
8
Accepte
d
Fe
b
1
9
, 201
8
In
thi
s
pape
r,
th
e
impact
of
surrounding
te
m
per
a
ture
on
the
exec
uti
on
of
the
sem
ic
onduct
or
l
ase
r
is
s
y
stemat
i
ca
l
l
y
exa
m
ine
d
i
n
princ
iple.
W
e
construc
t
ed
the
re
cr
eation
di
spla
y
and
the
si
m
ula
ti
on
re
sults
about
show
ed
tha
t
ambient
te
m
per
at
ur
e
ch
a
nges
would
influence
the
l
ase
r
chi
p
te
m
per
at
ur
e,
bring
ing
about
the l
ase
r
k
e
y
par
amete
rs
in
re
produc
ti
on
co
m
es
about
.
Ke
yw
or
d
s
:
Am
bient te
m
per
at
ur
e
ANSY
S
Sem
ic
on
duct
or lase
r
Ther
m
al
p
r
op
e
rtie
s
Copyright
©
201
8
Instit
ut
e
o
f Ad
vanc
ed
Engi
n
ee
r
ing
and
S
cienc
e
.
Al
l
rights re
serv
ed
.
Corres
pond
in
g
Aut
h
or
:
J.S.
As
hwin
,
Dep
a
rtm
ent o
f El
ect
rical
an
d
Ele
ct
ro
nics
E
nginee
rin
g
(
Ma
r
ine),
AMET
Un
i
versi
ty
,
Chen
nai,
I
nd
ia
.
1.
INTROD
U
CTION
A
sem
ic
on
du
ct
or
(
Laser
Diod
e,
LD)
la
se
r
is
the
best
an
d
m
os
t
reaso
nab
l
e
prosp
e
ct
a
m
ong
cl
ass
of
la
sers;
the
fun
dam
ental
gu
ideli
ne
is
th
e
hi
gh
producti
vit
y
of
el
ect
ro
n
-
photon
tran
sf
orm
ation
.
I
n
an
y
case,
because
of
the
nearness
of
non
-
ra
diati
ve
re
com
bin
at
ion
m
isfort
une,
f
ree
trans
porter
ass
i
m
i
la
ti
on
m
isfor
t
un
e
com
po
ne
nts
to
ou
tsi
de
diff
e
r
entia
l
qu
a
ntum
pr
o
fici
e
ncy
can
just
achi
eve
20%
-
30%,
wh
ic
h
im
plies
that
a
sign
ific
a
nt
pie
ce
of
the
in
f
use
d
el
ect
ric
infl
uen
ce
will
be
change
d
over
t
o
wa
rm
.A
s
the
tem
per
at
ur
e
ri
ses,
the
la
ser
li
m
it
current
w
ou
l
d
li
ke
wise
bu
il
ds,
br
i
ng
i
ng
ab
out
the
dim
inished
yi
el
d
c
ontrol
,
an
d
i
n
a
ddit
ion
the
m
ov
ed
em
anati
on
wa
velen
gt
h,
t
his
would
prom
pt
a
flim
sy
m
od
e,
e
xp
a
nd
ing
i
nwar
d
im
perfect
ions
tr
ul
y,
an
d
influ
e
nce t
he
li
fe
of
t
he gad
ge
t, an
d
al
on
g
t
he
se li
nes
it
has m
ade in
cre
dib
l
e trou
bles the
a
pp
li
cat
io
n.
2.
BACKG
ROU
ND
Firstl
y
analy
zed
overall
the
rm
al
char
act
er
ist
ic
s,
in
par
ti
cular
the
im
pact
of
te
m
per
at
ur
e
on
the
sem
ic
on
duct
or
la
ser
execu
ti
on
an
d
im
per
at
i
ve
pa
ram
et
ers
to
do
a
po
i
nt
by
po
int
exam
i
nation
t
o
disti
nguis
h
the
eff
ect
of
t
he
la
ser
chip
te
m
per
at
ur
e
of
the
lim
it
cur
rent
,
the
opti
cal
yield
con
t
ro
l
la
s
er
exec
utio
n
[1
]
-
[
2].
Also
,
util
iz
ing
A
NSYS
li
m
i
t
ed
c
om
po
ne
nt
exam
inati
on
r
ecreat
ion
pr
o
gram
m
ing
to
re
enact
the
im
pact
of
enco
m
passing
tem
per
at
ur
e
c
ha
ng
e
on
a
so
li
ta
ry
chip
interi
or
te
m
per
at
ure
of
the
sem
ic
on
duct
or
la
se
r
[3
]
-
[
4],
and
locat
e
the
com
par
ing
re
la
ti
on
sh
i
p
in
fluen
ce
the
c
on
necti
on
bet
we
en
s
urrou
nd
i
ng
te
m
per
at
ur
e
and
the
tem
per
at
ur
e
i
nsi
de
the
c
hip.
Last
co
ns
e
qu
e
nces
of
nat
ur
al
tem
per
at
ur
e
on
the
exec
utio
n
of
t
he
sem
ico
nd
ucto
r
la
ser
by
co
ntac
t.
The
synt
hesi
s
of
t
he
Zn
s
at
the
low
te
m
perat
ur
e
is
ex
plain
ed
in
the
L
ow
tem
per
at
ure
m
e
thod
for
synt
hesis
of Z
nS
quant
um d
ots a
nd it
s lu
m
inesce
nce c
ha
racteri
zat
ion s
tud
ie
s
[5
]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci
IS
S
N:
25
02
-
4752
Power
of A
mb
i
ent
Te
mpur
ature
on t
he
Perf
orma
nce
o
f i
he Semic
onduct
or Lase
r
(
J.S. A
s
hwin
)
607
2.1
.
The Pro
blem
The
cha
racteri
sti
cs
of
a
la
ser
diode
are
hi
gh
l
y
dep
en
de
nt
on
the
te
m
per
at
ur
e
of
the
la
ser
chip.
T
hus,
the
eff
ect
of
te
m
per
at
ur
e
on
t
he
net
wor
k
pe
r
form
ance
of
unco
oled
sem
ico
nd
ucto
r
la
ser
diode
are
st
ud
i
ed
by
si
m
ulati
ng
it
s
eq
uiv
al
ent
el
ect
rical
ci
rcu
it
,
de
velo
pe
d
f
ro
m
the
rate
eq
uations
th
at
governin
g
op
ti
cal
com
po
ne
nts
directl
y i
nto
a
n
e
le
ct
rical
si
m
ula
ti
on
fr
am
ewo
r
k.
2.2
.
The Pro
posed
So
lu
tio
n
Tem
per
at
ur
e
on
the
exec
utio
n
par
am
et
ers
of
la
se
r
li
m
i
t
current
a
re
e
xc
eptionally
to
uch
y,
li
tt
le
tem
per
at
ur
e
c
hanges
can
si
gn
i
ficantl
y
inf
luence
the
e
dg
e
cu
rr
e
nt
in
f
orm
at
ion
.
Be
ca
use
of
hot
tra
nsporte
r
sp
il
la
ge,
i
nner
m
isfor
tu
ne
a
nd
dif
fer
e
nt
reas
on
s
,
as
th
e
te
m
per
at
ur
e
rise
s,
the
e
dg
e
cu
r
ren
t
will
rise
[
6].
T
he
stud
ie
s
of
th
e
s
ta
rch
ca
pped
Z
ns
e
is
ex
plaine
d
in
the
L
ow
tem
per
at
ure
m
e
thod
for
sy
nth
e
sis
of
sta
rc
h
-
ca
ppe
d
ZnS
e
n
a
nopa
rtic
le
s and its c
ha
racteri
zat
ion st
ud
ie
s
[7
]
-
[
8].
The
higher
the
tem
per
at
ur
e
a
tt
ribu
te
s,
t
he
s
urrou
nd
i
ng
te
m
per
at
ur
e
of
t
he
la
ser
will
be
li
tt
le
r,
the
ste
adiness
of
t
he
la
ser
will
be
bette
r.
I
n
the
even
t
that
to
wind
up
no
ti
ce
ably
end
le
ssly
huge,
t
hen
t
he
edg
e
current
w
on
'
t
be
i
nf
l
uen
ce
d
by
te
m
per
at
ur
e.
I
n
a
fe
w
ti
m
es
with
the
risi
ng
te
m
per
at
ur
e
insi
de,
t
he
sem
ic
on
duct
or
bear
er
assim
ilati
on
m
isfor
t
une
will
ascend,
and
al
so
the
quantit
y
of
tran
sp
ort
ers
,
w
herea
s
the
ou
te
r diffe
ren
ti
al
q
ua
ntu
m
eff
i
ci
ency is re
duc
ed [
9].
3.
RESU
LT
S
AND DI
SCUS
S
ION
S
The
F
i
gure
1
-
3
port
rays
the
sco
pe
of
surr
oundin
g
te
m
per
at
ur
e
f
r
om
26
5K
t
o
33
5K
(a
bout
le
ss
10
degrees
t
o
60
de
gr
ees
),
t
he
tem
per
at
ur
e
of
t
he
la
ser
dy
nam
ic
la
ye
r
change
outl
ine,
dif
fer
e
nt
c
onditi
on
s
,
consi
der
i
ng
j
ust
la
ser
war
m
sink
an
d
ai
r
warm
,
go
tt
en
f
r
om
the
267K
c
hi
p
tem
per
at
ure
to
319K
(a
bout
l
ess
6
degrees t
o 46 de
gr
ees
).
Figure
1.
Am
bient tem
per
at
ure is set
at 2
65
K
therm
al
co
ntou
rs
la
ser
s
Figure
2.
Am
bient tem
per
at
ure is set
at 2
95
K
the
rm
al
con
t
ours
la
se
rs
Figure
3.
Am
bient tem
per
at
ure is set
at 3
35
K
the
rm
al
con
t
ours
la
se
rs
Figu
re
4.
Th
res
ho
l
d
c
urren
t c
urve
w
it
h t
he
a
m
bient
tem
per
at
ur
e
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2502
-
4752
Ind
on
esi
a
n
J
E
le
c Eng &
Co
m
p
Sci,
Vol
.
9
,
No.
3
,
Ma
rc
h
201
8
:
606
–
608
608
It can
b
e
seen
fro
m
the f
ig
ure,
as the
en
c
om
passing tem
per
at
ur
e c
ha
ng
es
, t
he
e
dg
e
curre
nt
w
as
essenti
al
ly
h
ig
her an
d o
ptica
l y
ie
ld
powe
r
is
sig
nificantl
y r
edu
ce
d.
4.
CONCL
US
I
O
N
This
pap
e
r
for
the
m
os
t
par
t
infl
uen
ci
ng
the
war
m
at
tri
bu
te
s
of
the
s
e
m
ic
on
duct
or
la
ser
an
d
t
he
su
r
rou
nd
i
ng
te
m
per
at
ur
e
of
the
la
ser
to
do
a
pr
e
par
at
ory
rev
ie
w
,
util
iz
ing
ANSY
S
lim
it
ed
com
po
nent
inv
est
igati
on
pro
gr
am
m
ing
,
joine
d
with
the
war
m
qu
al
it
i
es
of
the
sem
i
cond
ucto
r
la
ser
hypothesis
,
bro
ke
dow
n
the
te
st
disp
la
y
gott
en
by
the
enc
om
passing
te
m
per
a
ture
in
flue
nce
the
exec
utio
n
of
t
he
sem
ic
on
du
ct
or
la
ser
relat
io
nsh
ip.
1.
T
o
be
gin
w
it
h
s
ub
tl
e
el
em
e
nts
on
t
he
e
ff
e
ct
of
t
he
a
dju
st
m
ent
in
te
m
per
at
ur
e o
f
the
se
m
ic
on
duct
or
la
ser
w
ou
l
d
in
f
luence
li
m
i
t
pr
esent
an
d
diff
e
ren
ti
al
quant
um
pr
od
uctivit
y,
yi
el
d
op
ti
cal
powe
r,
w
hic
h
can
be
induced
that
that
at
the
ty
pical
te
m
per
atu
re
exte
nd,
t
he
te
m
per
at
ure
rises,
sig
nif
ic
antly
aff
ect
these
par
am
et
ers
, in
basic te
rm
s,
th
e te
m
per
at
ure r
ise
w
il
l l
essen
t
he
e
xecu
ti
on of the
laser.
2.
Util
iz
ing
A
NSYS
recreati
on
com
es
about
on
the
enc
om
passing
te
m
per
at
ur
e
of
the
interi
or
tem
per
at
ur
e
of
the
la
ser,
w
hich
co
uld
be
infe
rr
e
d
that
as
the
su
r
rou
nd
i
ng
te
m
per
at
ur
e
cha
ng
e
s,
cha
nges
in
t
he
inn
e
r
te
m
per
at
ur
e
of
the
la
ser
chi
p
is
as
co
r
respo
nd
i
ng
rel
at
ion
s,
nat
ur
al
tem
per
at
ur
e
,
th
e
tem
per
at
ure
insid
e
the lase
r It
will
take a
fter t
he a
scent.
3.
T
his
two
co
nclusi
on
s
ca
n
be
joine
d
as
ta
ke
after,
unde
r
ordina
ry
encom
passing
tem
per
at
ur
e
go,
a
s
t
he
su
r
r
oundin
g
tem
per
at
ure
rising,
the
lim
i
t
cur
re
nt
of
the
se
m
ic
on
duct
or
la
ser
buil
ds
,
the
oute
r
dif
fere
ntial
qu
a
ntu
m
eff
ect
iveness
is
dim
i
nish
e
d,
the
opti
cal
yi
el
d
pow
er
is
le
sse
ned,
and
the
yi
el
d
wav
el
e
ng
t
h
si
de
long,
the slant
pro
fici
ency abatem
e
nts,
s
ound
ness and adm
inist
rati
on
li
fe
ha
ve d
ecl
ined.
REFERE
NCE
S
[1]
Xia
.
Influe
n
ce
o
f
ext
ern
a
l
ca
v
ity
le
ngth
on
la
sin
g
wave
le
ngth
va
ria
ti
on
of
fib
er
gra
ti
ng
sem
ic
on
duct
or
la
ser
wit
h
ambient
te
m
per
a
ture
.
Opti
k
-
Inte
r
nati
onal Journal
for Light and El
ec
tron
Opt
ic
s
.
2
003;
114
(6).
[2]
Qing
C.
The
p
roble
m
with
be
am
qual
ity
for
sem
ic
onduct
or
l
ase
r
.
Optik
-
In
te
r
nati
onal
Journa
l
for
Light
and
El
e
ct
ron Opti
cs
.
2016;
127
(8):
37
01
-
3702.
[3]
Zha
ng
.
An opt
ical
non
-
cont
a
ct m
ea
surem
ent m
et
h
od
for
hot
-
st
ate
s
iz
e
of
c
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