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Vo
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71
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:
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ca
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Do
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ate
MO
SF
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p
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Sh
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T
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CC B
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SA
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C
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p
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A
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:
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Pas
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Mo
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m
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Dep
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Vis
v
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T
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Un
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elag
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Kar
n
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I
n
d
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m
ail: h
am
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jits
@
g
m
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co
m
1.
I
NT
RO
D
UCT
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I
n
th
e
m
o
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er
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th
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ased
s
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ico
n
d
u
cto
r
in
d
u
s
t
r
y
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ev
elo
p
in
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ap
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ly
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its
,
wir
eless
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m
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n
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y
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s
,
m
o
b
ile
d
ev
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an
d
s
o
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ac
co
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d
in
g
to
Mo
o
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s
L
aw.
T
h
e
tech
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an
d
s
cien
tific
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v
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m
en
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a
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m
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f
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s
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ex
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if
f
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en
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m
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d
tech
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lo
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to
s
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v
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p
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p
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s
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p
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co
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ar
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d
s
p
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d
in
a
h
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in
te
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d
en
s
ity
ap
p
licatio
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.
I
n
f
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r
th
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ap
p
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co
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p
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en
tar
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m
etal
-
o
x
id
e
-
s
em
ico
n
d
u
cto
r
(
C
MO
S
)
[
1
]
is
f
ac
in
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f
u
n
d
am
e
n
tal
p
h
y
s
ical
lim
its
in
ter
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alter
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s
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(
SOI
)
d
ev
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[
2
]
,
wh
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ca
n
b
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s
ca
led
m
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r
e
ag
g
r
ess
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e
ly
th
an
b
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C
MO
S.
SOI
an
d
its
v
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p
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tially
d
ep
leted
(
PD)
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f
u
lly
d
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p
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(
FD)
u
s
es
th
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s
am
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s
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tr
ate,
th
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am
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m
ater
ial
with
th
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s
am
e
f
ab
r
icatio
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p
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s
s
,
b
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it
is
v
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s
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s
ce
p
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f
lo
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ec
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with
s
ca
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ain
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as
b
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d
ev
ic
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[
3
]
–
[
5
]
ca
u
s
in
g
th
e
th
r
esh
o
ld
Evaluation Warning : The document was created with Spire.PDF for Python.
I
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:
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8
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4
I
n
t J Reco
n
f
ig
u
r
a
b
le
&
E
m
b
ed
d
ed
Sy
s
t
,
Vo
l.
11
,
No
.
1
,
M
ar
c
h
20
22
:
71
-
83
72
v
o
ltag
e
t
o
b
e
s
en
s
itiv
e
to
SOI
th
ick
n
ess
an
d
d
ev
ice
ter
m
in
al
in
ter
f
ac
e.
A
d
v
an
ce
d
MO
SF
E
T
s
tr
u
ctu
r
es
a
r
e
th
e
b
est
alter
n
ativ
es
f
o
r
SOI
,
s
u
ch
as
m
u
ltip
le
g
ate
MO
SF
E
T
,
w
h
ich
ca
n
s
ca
le
b
u
lk
SOI
s
tr
u
ct
u
r
es.
A
d
o
u
b
le
g
ate
MO
SF
E
T
(
DG
MO
SF
E
T
)
s
tr
u
ctu
r
e
f
ab
r
icate
d
o
n
SOI
waf
er
is
m
ad
e
u
s
ed
in
[
6
]
as
co
m
p
ar
ed
to
th
e
b
u
lk
MO
SF
E
T
s
.
Am
o
n
g
th
e
MO
SF
E
T
em
er
g
i
n
g
d
ev
ices
[
7
]
,
th
e
DG
-
MO
SF
E
T
is
im
p
o
r
tan
t
th
r
o
u
g
h
[
8
]
,
[
9
]
.
Fro
m
th
e
s
u
r
v
e
y
ed
liter
atu
r
e,
th
e
s
ta
tem
en
ts
o
f
th
e
p
r
o
b
lem
a
d
d
r
es
s
in
g
in
t
h
is
p
r
o
p
o
s
ed
p
ap
e
r
D
G
MO
SF
E
T
d
esig
n
ar
e:
i)
L
im
itatio
n
ar
is
in
g
f
r
o
m
th
e
f
ix
ed
s
ec
o
n
d
g
ate
v
o
lt
ag
e
is
th
at
f
o
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r
-
ter
m
in
al
d
r
i
v
en
DG
-
MO
SF
E
T
s
ex
h
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o
n
-
id
ea
l
s
u
b
t
h
r
esh
o
l
d
s
lo
p
e
[
1
0
]
.
An
d
ca
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b
e
lim
i
ted
b
y
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t
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m
in
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len
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th
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h
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t
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elate
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to
4
tim
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th
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ick
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ess
w
id
th
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f
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x
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;
ii)
L
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n
ar
is
in
g
f
r
o
m
d
ec
r
ea
s
e
in
o
x
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wit
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g
lev
els
h
ig
h
in
d
ev
i
ce
s
u
b
s
tr
ate.
W
ith
th
is
,
th
er
e
is
an
in
cr
ea
s
e
in
ju
n
ctio
n
ca
p
ac
itan
ce
an
d
c
u
r
r
e
n
t
tu
n
n
elin
g
an
d
s
im
ilar
ly
th
e
r
e
is
a
s
lo
p
e
o
f
s
u
b
th
r
esh
o
ld
cu
r
r
en
t
an
d
m
o
b
ili
ty
o
f
th
e
ca
r
r
ier
s
in
th
e
d
ev
ic
e
d
r
ain
[
1
1
]
ter
m
in
al,
wh
ic
h
r
esu
lts
in
s
u
b
th
r
esh
o
ld
v
o
lu
m
e
in
v
er
s
io
n
;
iii)
L
im
itatio
n
ar
is
in
g
f
r
o
m
t
h
e
s
lo
p
e
o
f
th
e
s
u
b
th
r
esh
o
ld
wh
ic
h
allo
ws
th
e
d
e
v
ice
r
ed
u
ce
le
ak
ag
e
cu
r
r
e
n
t
i
n
th
e
d
ev
ice
th
r
o
u
g
h
d
r
iv
i
n
g
cu
r
r
en
t
[
1
2
]
,
wh
ich
r
esu
lts
in
lo
wer
in
g
th
e
t
h
r
esh
o
ld
v
o
lta
g
e
with
th
e
f
allin
g
s
u
b
th
r
esh
o
ld
s
lo
p
e
in
a
c
h
an
n
elled
DG
MO
SF
E
T
s
;
an
d
iv
)
L
im
itatio
n
ar
is
es
as
th
e
to
p
g
a
te
is
co
n
d
u
cted
an
d
ca
u
s
in
g
th
e
s
h
o
r
t
-
c
h
an
n
el
ef
f
ec
t
[
1
3
]
–
[
1
5
]
.
T
h
e
s
h
o
r
t
-
ch
a
n
n
el
ef
f
ec
ts
(
SC
E
s
)
f
o
r
tr
i
-
g
at
e
MO
SF
E
T
ca
n
b
e
co
n
tr
o
lled
th
an
i
n
Fin
FET
s
m
ak
in
g
th
e
d
o
u
b
le
-
g
ate
d
esig
n
ca
u
s
in
g
th
e
g
ain
o
f
th
e
tr
i
-
g
ate
MO
SF
E
T
d
ev
ice
to
in
cr
ea
s
e,
wh
ich
ca
u
s
es SC
E
s
t
o
r
ed
u
ce
.
I
n
th
is
r
esear
ch
p
ap
er
,
th
e
im
p
lem
en
tatio
n
h
as
b
ee
n
m
ad
e
with
d
esig
n
in
g
DG
MO
SF
E
T
d
ev
ice
in
d
if
f
er
en
t
ca
s
es
[
1
6
]
–
[
1
8
]
b
y
v
ar
y
in
g
ch
a
n
n
el
len
g
t
h
an
d
c
o
m
p
r
o
m
is
e
b
etwe
en
p
o
wer
an
d
s
p
ee
d
p
er
f
o
r
m
an
ce
an
d
lin
ea
r
it
y
.
T
h
e
s
ca
lin
g
is
m
ad
e
b
ased
o
n
th
e
ass
u
m
p
tio
n
s
o
f
d
im
e
n
s
io
n
al
m
i
n
iatu
r
izatio
n
o
f
th
e
d
ev
ice
an
d
with
th
e
s
ca
lin
g
c
o
n
s
tan
t
v
alu
es
.
T
h
e
s
p
ec
if
ic
o
b
j
ec
tiv
es
in
c
lu
d
e:
i)
T
o
p
r
o
p
o
s
e
an
d
d
esig
n
a
n
ew
d
is
tin
ct
ρ
-
b
ased
DG
-
MO
SF
E
T
ar
ch
itect
u
r
e
m
o
d
el
an
d
ii)
T
o
an
aly
ze
th
e
s
h
o
r
t
-
ch
an
n
el
ef
f
ec
ts
with
cu
r
r
en
t
co
n
tin
u
ity
eq
u
atio
n
b
ased
o
n
Po
is
s
o
n
’
s
eq
u
atio
n
an
d
to
in
v
esti
g
ate
th
e
ch
ar
ac
ter
is
tics
o
f
th
e
f
o
u
r
-
t
er
m
i
n
al
d
r
iv
en
DG
MO
SF
E
T
to
th
e
p
r
o
p
o
s
ed
d
is
tin
ct
ρ
-
b
ased
DG
-
MO
SF
E
T
ar
ch
itectu
r
e
m
o
d
el.
I
n
s
ec
tio
n
2
,
r
ev
iew
o
f
p
r
ev
io
u
s
m
eth
o
d
s
ar
e
m
ad
e.
I
n
s
ec
tio
n
3
,
th
e
m
eth
o
d
o
lo
g
y
an
d
m
o
d
e
lin
g
o
f
th
e
p
r
o
p
o
s
ed
DG
MO
SF
E
T
is
p
r
esen
ted
.
in
s
ec
tio
n
4
,
s
im
u
latio
n
r
esu
lts
an
d
d
is
cu
s
s
io
n
o
f
th
e
p
r
o
p
o
s
ed
DG
MO
SF
E
T
is
m
ad
e.
Sectio
n
5
a
n
d
6
p
r
o
v
id
es c
o
n
clu
s
io
n
s
an
d
f
u
tu
r
e
s
co
p
e
o
f
th
e
p
r
o
p
o
s
ed
wo
r
k
.
2.
L
I
T
E
R
AT
U
RE
R
E
VI
E
W
A
Fin
FET
tr
an
s
is
to
r
with
m
u
l
ti
-
g
ate
d
ev
ice,
h
av
i
n
g
h
ig
h
er
p
er
f
o
r
m
an
ce
,
th
e
ch
alle
n
g
es
o
f
Fin
FET
s
ar
e:
a)
W
ith
th
e
d
ec
r
ea
s
e
in
th
e
f
in
-
wid
th
,
ca
u
s
es
th
e
m
in
im
iz
atio
n
o
f
SC
E
s
,
th
r
o
u
g
h
its
f
in
s
h
ap
e,
b
y
m
in
im
izin
g
th
e
d
o
p
in
g
le
v
el
in
ch
an
n
el,
th
e
s
u
b
th
r
esh
o
l
d
v
ar
iatio
n
s
ar
e
m
in
im
ized
.
Fo
r
to
o
th
ick
Fin
FET
,
th
e
g
ate
o
n
th
e
s
id
e
s
an
d
to
p
elec
tr
o
s
tatic
in
f
lu
e
n
ce
wi
ll
b
e
r
ed
u
ce
d
.
T
o
o
f
e
w
f
in
s
ca
n
also
ca
u
s
e
v
ar
iab
ilit
y
.
T
h
e
ch
allen
g
e
o
f
f
i
n
d
o
p
in
g
is
t
h
e
a
p
p
licat
io
n
o
f
h
ig
h
d
ielec
tr
ic
g
r
ain
lay
er
s
in
d
is
cr
ete
s
ize
in
DG
MO
SF
E
T
ch
a
n
n
el
s
d
o
p
in
g
[
1
9
]
–
[
2
3
]
.
DG
MO
SF
E
T
s
wo
r
k
b
est
as
r
e
g
u
lar
s
tr
u
ctu
r
es
p
lace
d
o
n
a
g
r
id
.
T
o
in
cr
ea
s
e
g
ate
d
r
i
v
e
s
tr
en
g
th
g
r
ain
s
ar
e
in
clu
d
e
d
in
th
e
f
o
r
m
o
f
d
is
cr
ete
s
ized
h
ig
h
d
ielec
tr
ic
g
r
ain
lay
e
r
s
,
th
r
o
u
g
h
d
is
tin
ct
v
ar
iatio
n
s
,
wh
ich
is
n
o
t
a
v
ailab
le
in
Fin
FET
s
.
C
h
an
n
el
len
g
th
v
a
r
iatio
n
an
d
b
o
d
y
b
iasi
n
g
ar
e
lim
ited
in
v
alu
e
d
u
e
to
th
e
in
tr
in
s
ic
ch
ar
ac
ter
is
tics
o
f
th
e
Fin
FE
T
tech
n
o
lo
g
y
,
wh
ich
ca
n
b
e
lim
ited
th
r
o
u
g
h
th
e
ap
p
licatio
n
o
f
h
ig
h
d
ie
lectr
ic
g
r
ain
lay
er
s
in
d
is
cr
ete
s
ize
in
D
G
MO
SF
E
T
.
b)
B
ec
au
s
e
o
f
th
e
p
r
o
x
im
ity
o
f
g
ates
in
Fin
FET
,
th
e
ch
ar
g
e
s
h
ar
in
g
o
cc
u
r
s
in
th
e
c
o
r
n
er
s
o
f
f
r
o
n
t
a
n
d
b
ac
k
g
ates,
with
its
p
r
em
atu
r
e
in
v
e
r
s
io
n
f
o
r
th
e
g
ate
-
to
-
ch
a
n
n
el
elec
tr
ic
f
ield
.
T
h
e
c
h
allen
g
e
o
f
s
u
b
th
r
esh
o
l
d
ch
ar
ac
ter
is
tics
o
f
th
e
Fin
FET
d
eg
r
a
d
es,
u
s
e
o
f
d
is
tin
ct
g
r
a
in
s
at
th
e
m
id
d
le
o
f
g
at
es,
w
h
er
e
th
e
h
ig
h
d
ielec
tr
ic
g
r
ain
lay
er
s
ar
e
p
o
s
itio
n
ed
at
a
co
n
s
tan
t
(
ρ
)
an
d
eq
u
al
p
o
s
itio
n
lo
ca
tio
n
s
with
a
d
is
cr
ete
s
iz
e
d
u
r
in
g
DG
MO
SF
E
T
ch
an
n
els d
o
p
in
g
f
r
o
m
its
s
u
r
f
ac
e
to
c
h
a
n
n
el
lo
ca
tio
n
.
I
n
Do
u
b
le
g
ate
MO
SF
E
T
th
e
s
o
u
r
ce
an
d
d
r
ain
m
ad
e
u
p
o
f
s
ilico
n
m
ater
ial
an
d
g
ate
is
m
a
d
e
u
p
o
f
Al
m
ater
ial.
T
h
e
u
s
e
o
f
h
i
g
h
d
ie
lectr
ic
g
r
ain
lay
er
s
p
o
s
itio
n
e
d
at
a
co
n
s
tan
t
(
ρ
)
an
d
e
q
u
al
p
o
s
itio
n
lo
ca
tio
n
s
p
r
o
v
id
e
d
in
th
e
s
tr
ain
ed
Si
m
ater
ials
.
T
h
e
m
ater
ial
u
s
ed
f
o
r
g
r
ain
s
is
s
ca
lab
le
as
it
p
r
o
v
id
es
an
ac
ce
p
tab
le
lev
el
o
f
elec
tr
o
n
an
d
h
o
le
m
o
b
ilit
y
ev
en
at
r
ed
u
ce
d
th
ick
n
e
s
s
.
T
h
e
MO
SF
E
T
’
s
u
s
in
g
g
r
ain
m
ater
ials
ca
n
b
e
u
s
ed
as
h
ig
h
-
p
er
f
o
r
m
a
n
ce
s
e
m
ico
n
d
u
ct
o
r
d
ev
ices.
As
th
e
l
ea
k
ag
e
cu
r
r
en
t
in
cr
ea
s
es,
th
e
t
h
ick
n
ess
o
f
t
h
e
Gate
Ox
id
e
m
ater
ial
is
in
cr
e
ased
t
o
r
ed
u
ce
th
ese
cu
r
r
en
ts
.
T
o
i
n
cr
ea
s
e
g
ate
ca
p
ac
ita
n
c
e
th
e
r
elativ
e
d
ielec
tr
ic
co
n
s
tan
t
o
f
th
e
m
ater
ial
s
ilico
n
d
io
x
id
e
is
r
e
p
lace
d
with
a
r
elativ
ely
h
ig
h
d
ielec
tr
ic
g
r
ain
lay
er
m
ater
ial.
T
h
is
will
allo
w
th
e
u
s
e
o
f
t
h
ick
er
d
ielec
tr
ic
g
ate
lay
er
wh
ich
ca
n
b
e
u
s
ed
to
r
ed
u
ce
th
e
lea
k
ag
e
cu
r
r
en
t
th
r
o
u
g
h
th
e
s
tr
u
ctu
r
e.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J Reco
n
f
ig
u
r
a
b
le
&
E
m
b
ed
d
ed
Sy
s
t
I
SS
N:
2089
-
4
8
6
4
Dis
tin
ct
ρ
-
b
a
s
ed
mo
d
el
o
f sil
ico
n
N
-
ch
a
n
n
el
d
o
u
b
le
g
a
te
MOS
F
E
T
(
Ha
mee
d
P
a
s
h
a
Mo
h
a
m
ma
d
)
73
T
h
e
r
eq
u
ir
em
e
n
ts
f
o
r
s
u
ch
d
is
tin
ct
ρ
-
b
ased
m
o
d
el
o
f
s
ilico
n
N
-
ch
an
n
el
d
o
u
b
le
g
ate
MO
SF
E
T
with
h
ig
h
d
ielec
tr
ic
g
r
ain
lay
er
s
p
o
s
itio
n
ed
at
a
co
n
s
tan
t
(
ρ
)
a
n
d
eq
u
al
p
o
s
itio
n
co
m
p
ac
t
m
o
d
els
in
cl
u
d
e
with
s
u
b
th
r
esh
o
ld
s
win
g
an
d
o
n
ch
an
n
el
len
g
th
m
o
d
u
latio
n
a
n
d
th
e
d
ep
en
d
en
ce
o
n
s
h
o
r
t
ch
an
n
el
e
f
f
ec
ts
o
n
th
r
esh
o
ld
v
o
lta
g
e
with
tem
p
er
atu
r
e
an
d
o
n
s
tr
u
ctu
r
es
d
i
m
en
s
io
n
s
.
Fin
ally
,
th
ey
s
h
o
u
ld
b
e
ac
cu
r
ate
an
d
co
m
p
u
tatio
n
ally
ef
f
icien
t.
3.
P
RO
P
O
SE
D
DI
ST
I
NC
T
ρ
-
B
AS
E
D
D
E
VIC
E
M
O
D
E
L
AND
M
E
T
H
O
DO
L
O
G
Y
I
n
th
is
s
e
ctio
n
,
th
e
s
im
u
latio
n
m
o
d
el
o
f
p
r
o
p
o
s
ed
d
is
tin
ct
ρ
-
b
ased
d
ev
ice
is
d
is
cu
s
s
ed
with
th
eo
r
etica
l
an
d
p
r
ac
tical
m
o
d
el.
MA
T
L
AB
co
d
e
h
as
b
ee
n
p
r
esen
ted
to
d
em
o
n
s
tr
ate
th
e
an
aly
tical
m
o
d
el
o
f
p
r
o
p
o
s
ed
d
ev
ice
d
esig
n
an
d
t
h
e
Dis
tin
ct
ρ
-
b
ased
d
ev
ice
d
esig
n
m
o
d
el
is
ad
o
p
ted
to
im
p
lem
en
t
Sil
ico
n
N
-
ch
an
n
el
d
u
al
-
g
ate
MO
SF
E
T
.
T
h
e
m
o
d
els
f
o
r
s
h
o
r
t
a
n
d
l
o
n
g
ch
a
n
n
el
DG
MO
SF
E
T
ar
e
ca
teg
o
r
ized
i
n
to
elec
tr
o
s
tatic
s
u
r
f
ac
e
ch
ar
g
e
d
is
tr
ib
u
tio
n
s
,
to
tal
i
n
ter
n
al
d
ev
ice
ca
p
ac
itan
ce
an
d
d
ev
ice
d
r
ain
-
s
o
u
r
ce
ch
ar
ac
ter
is
tics
m
o
d
els f
o
r
an
al
y
tical
an
d
s
im
u
latio
n
m
o
d
els
[
2
4
]
,
[
2
5]
.
I
n
th
is
r
esear
ch
wo
r
k
,
p
lan
a
r
DGM
OSFET
is
co
n
s
id
er
ed
wi
th
a
d
is
tin
ct
ρ
-
b
ased
d
ev
ice
,
wh
ich
is
an
alter
n
ativ
e
tech
n
o
lo
g
y
f
o
r
Fin
FET
's.
C
o
m
p
ar
ed
with
GAA
a
n
d
T
r
i
-
g
ate
MO
SF
E
T
's,
th
e
p
e
r
f
o
r
m
a
n
ce
in
ter
m
s
o
f
I
DS
an
d
DI
B
L
is
im
p
r
o
v
e
d
.
I
n
th
is
p
ap
er
,
a
c
o
n
v
e
n
tio
n
al,
one
to
p
g
ate
DG
MO
SF
E
T
an
d
b
o
th
g
ate
DGM
OSFET
's
ar
e
co
n
s
id
er
e
d
with
g
ate
all
ar
o
u
n
d
(
GAA
)
,
Fin
FET
S
,
an
d
t
ri
-
g
ate
MO
SF
E
T
s
.
Fo
r
1
0
n
m
s
ca
le,
th
e
p
er
f
o
r
m
an
ce
o
f
p
r
o
p
o
s
ed
DGM
OSFET
is
s
h
o
wi
n
g
an
im
p
r
o
v
ed
Δ
Vg
a
v
ar
y
i
n
g
g
ate
v
o
ltag
e
f
o
r
d
if
f
er
en
t
f
r
o
n
t
an
d
b
ac
k
g
ate
v
o
ltag
es
.
Stu
d
y
an
d
im
p
lem
e
n
tatio
n
o
f
p
r
o
p
o
s
ed
DG
MO
S
FET
th
r
o
u
g
h
p
lan
a
r
d
esig
n
ca
n
b
e
m
ad
e
r
elev
a
n
t
with
th
e
u
s
ag
e
o
f
d
o
p
in
g
c
o
n
ce
n
tr
atio
n
s
tr
u
ctu
r
es,
wh
e
r
e
r
esis
tan
ce
ca
n
b
e
r
ed
u
ce
d
,
in
tu
r
n
in
cr
ea
s
in
g
t
h
e
I
DS
f
o
r
im
p
r
o
v
ed
s
with
c
h
in
g
a
c
tio
n
.
I
n
th
is
r
esear
ch
p
ap
er
,
a
lay
e
r
ed
DG
MO
SF
E
T
s
tr
u
ctu
r
e
th
r
o
u
g
h
b
allis
tic
q
u
an
tu
m
s
im
u
latio
n
is
in
tr
o
d
u
ce
d
.
T
h
is
lay
er
ed
s
tr
u
ctu
r
e
with
d
is
tin
ct
s
lo
ts
s
t
r
u
ctu
r
e
s
o
lu
tio
n
s
is
p
r
esen
ted
th
r
o
u
g
h
Po
is
s
o
n
co
n
tin
u
ity
eq
u
ati
o
n
in
m
ak
in
g
b
allis
tic
elec
tr
o
n
s
.
Usi
n
g
MA
T
L
AB
,
th
e
p
r
o
p
o
s
ed
lay
er
ed
DG
MO
S
FET
with
d
ev
ice
s
tr
u
ctu
r
e
a
n
d
d
o
p
in
g
le
v
els ar
e
an
aly
ze
d
.
3
.
1
.
Dis
t
inct
ρ
-
ba
s
e
d
dev
ice
s
t
ruc
t
ure
T
h
e
s
tr
u
ctu
r
e
o
f
th
e
p
r
o
p
o
s
ed
d
is
tin
ct
ρ
-
b
ased
DG
M
OSFET
u
s
ed
in
th
is
r
esear
c
h
wo
r
k
is
s
ch
em
atica
lly
p
r
esen
ted
in
F
ig
u
r
e
1
,
h
av
e
th
e
d
esig
n
p
ar
am
et
er
s
as sh
o
wn
in
T
ab
le
1
.
I
n
th
e
d
ef
in
ed
s
tr
u
ctu
r
e,
s
y
m
m
etr
ical
p
+
an
d
p
-
p
o
ly
g
a
tes with
o
u
t d
r
ain
an
d
s
o
u
r
ce
d
ev
ice
ter
m
in
als.
Fig
u
r
e
1
.
I
ll
u
s
tr
atio
n
o
f
p
r
o
p
o
s
ed
DG
-
MO
SF
E
T
ρ
-
d
is
t
in
ct
s
l
o
ts
s
tr
u
ctu
r
e
T
h
e
b
ac
k
g
r
o
u
n
d
d
o
p
i
n
g
o
f
th
e
s
ilico
n
f
ilm
f
o
r
d
is
tin
ct
ρ
-
b
ased
s
lo
t
s
tr
u
ctu
r
e
with
1
n
m
o
f
to
p
an
d
b
o
tto
m
ρ
s
lo
t
o
f
g
ate
s
tack
with
SiO2
p
+
s
tr
ain
ed
Si
lay
er
an
d
is
co
n
s
id
er
ed
t
o
b
e
in
tr
in
s
ic
,
a
s
s
h
o
wn
in
F
ig
u
r
e
2
.
Un
if
o
r
m
p
in
s
u
latio
n
s
tr
ain
ed
-
Si
co
n
tain
s
a
m
id
d
le
-
ρ
-
s
lo
t
g
ate
s
tack
is
p
lac
ed
b
etwe
en
to
p
an
d
b
o
tto
m
g
ate
s
tack
with
a
th
ick
n
ess
o
f
0
.
5
n
m
.
T
h
e
b
o
tto
m
SiO2
in
ter
f
ac
ial
lay
er
is
also
s
tack
ed
with
h
ig
h
d
ielec
tr
ic
co
n
s
tan
t m
ater
ial
u
n
if
o
r
m
p
-
s
tr
ain
ed
-
Si lay
er
w
h
o
s
e
th
ick
n
ess
is
1
nm.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
9
-
4
8
6
4
I
n
t J Reco
n
f
ig
u
r
a
b
le
&
E
m
b
ed
d
ed
Sy
s
t
,
Vo
l.
11
,
No
.
1
,
M
ar
c
h
20
22
:
71
-
83
74
Fig
u
r
e
2
.
I
ll
u
s
tr
atio
n
o
f
p
r
o
p
o
s
ed
DG
MO
SF
E
T
ρ
-
s
tr
ain
ed
Si
s
tr
u
ctu
r
e
3
.
2
.
M
o
del dev
elo
pm
ent
I
n
DG
MO
SF
E
T
,
as
s
h
o
wn
in
F
ig
u
r
e
3
,
with
b
o
th
to
p
p
+
g
ate
s
tack
,
b
o
tto
m
p
-
g
ate
s
tack
o
f
h
ig
h
d
ielec
tr
ic
co
n
s
tan
t
[
2
6
]
,
as
t
h
e
b
o
tto
m
g
ate
h
i
g
h
d
ielec
tr
ic
co
n
s
tan
t
la
y
er
t
h
ick
n
ess
is
in
cr
ea
s
ed
,
ca
u
s
in
g
s
o
u
r
ce
to
d
r
ain
p
o
ten
tial
b
ar
r
ier
to
r
ed
u
ce
,
with
th
is
b
o
tto
m
g
ate
to
in
cr
ea
s
e
th
e
th
r
esh
o
ld
lev
el.
T
h
e
d
r
ain
cu
r
r
en
t
t
h
r
o
u
g
h
g
ate
s
tack
is
im
p
r
o
v
e
d
with
to
p
an
d
b
o
tto
m
g
ate
s
tack
s
,
ca
u
s
in
g
th
e
th
r
esh
o
ld
v
o
ltag
e
an
d
d
r
ain
cu
r
r
en
t
to
s
tab
ilize
th
e
d
ev
ice
d
im
en
s
io
n
s
at
a
c
o
n
s
tan
t
r
ate
with
th
e
b
o
tto
m
g
ate
h
a
v
in
g
h
i
g
h
d
ielec
tr
ic
co
n
s
tan
t.
W
ith
th
is
th
er
e
is
a
r
ed
u
ctio
n
in
d
ielec
tr
ic
co
n
s
tan
t
p
o
ten
tial
b
ar
r
ier
o
f
th
e
r
e
lev
an
t
b
o
tto
m
g
ate
s
tack
,
ca
u
s
in
g
th
e
elec
tr
o
n
d
en
s
ity
to
r
ed
u
ce
an
d
ca
u
s
in
g
th
e
th
r
esh
o
ld
v
o
ltag
e
to
r
ed
u
ce
with
b
o
th
g
ate
s
tack
s
.
Pro
p
o
s
ed
m
o
d
el
r
esu
lts
in
a
im
p
r
o
v
em
en
t
in
elec
tr
o
n
d
en
s
ity
an
d
r
ed
u
ctio
n
o
f
th
r
esh
o
ld
v
o
ltag
e
f
o
r
DG
MO
SF
E
T
s
w
ith
b
o
th
p
+
a
n
d
p
-
g
ate
s
tack
s
.
Fig
u
r
e
3
.
I
ll
u
s
tr
atio
n
o
f
p
r
o
p
o
s
ed
d
is
tin
ct
ρ
-
b
ased
m
o
d
el
o
f
s
ilico
n
N
-
ch
an
n
el
d
o
u
b
le
g
ate
MO
SF
E
T
3
.
3
.
M
o
del
f
lo
wcha
rt
T
h
e
f
lo
wch
ar
t
o
f
b
allis
tic
M
OSFET
is
p
r
esen
ted
in
Fig
u
r
e
4
th
r
o
u
g
h
b
allis
tic
ca
r
r
ier
t
r
an
s
p
o
r
t
is
co
n
s
id
er
ed
.
T
h
r
o
u
g
h
o
n
e
s
u
b
b
an
d
co
n
d
u
ctio
n
,
t
h
e
u
ltra
-
th
in
m
ater
ial
f
ilm
is
u
tili
ze
d
f
o
r
p
r
o
p
o
s
ed
DG
MO
SF
E
T
d
ev
ice
d
esig
n
.
I
n
Fig
u
r
e
5
,
th
e
d
is
tin
ct
ρ
-
b
ased
DG
MO
SF
E
T
d
esig
n
f
lo
w
ch
ar
t
is
s
h
o
wn
,
with
cr
y
s
tallin
e
g
r
ain
s
m
ad
e
ch
ar
g
ed
b
o
d
ies
th
r
o
u
g
h
1
n
m
v
er
tic
al
cr
o
s
s
-
s
ec
tio
n
ar
ea
,
h
av
in
g
t
h
e
ch
ar
g
e
d
d
en
s
ity
v
ar
y
in
g
f
r
o
m
1
to
1
0
u
,
with
u
=1
.
2
8
x
1
0
-
12
C
/cm
.
I
n
th
e
p
r
o
p
o
s
ed
DG
MO
SF
E
T
d
ev
ice
d
esig
n
,
s
u
b
th
r
esh
o
ld
p
ar
am
eter
s
an
d
d
r
ain
c
u
r
r
e
n
t
ch
ar
ac
ter
is
tics
wer
e
in
v
esti
g
ated
in
th
e
p
r
esen
ce
o
f
to
p
a
n
d
b
o
tto
m
ch
ar
g
e
d
d
is
tin
ct
ρ
-
s
lo
ts
,
wh
ich
b
ec
o
m
e
asy
m
m
etr
ic
with
th
e
ch
ar
g
e
s
lo
ts
o
f
d
u
al
-
g
ate
d
ielec
tr
ic
lay
e
r
s
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J Reco
n
f
ig
u
r
a
b
le
&
E
m
b
ed
d
ed
Sy
s
t
I
SS
N:
2089
-
4
8
6
4
Dis
tin
ct
ρ
-
b
a
s
ed
mo
d
el
o
f sil
ico
n
N
-
ch
a
n
n
el
d
o
u
b
le
g
a
te
MOS
F
E
T
(
Ha
mee
d
P
a
s
h
a
Mo
h
a
m
ma
d
)
75
Fig
u
r
e
4
.
Flo
wch
ar
t
o
f
p
r
o
p
o
s
ed
DG
MO
SF
E
T
b
allis
tic
m
ec
h
an
is
m
o
n
Flo
w
o
f
b
allis
tic
DG
MO
SF
E
T
m
ec
h
an
is
m
Fig
u
r
e
5
.
Flo
wch
ar
t
o
f
p
r
o
p
o
s
ed
DG
MO
SF
E
T
ca
r
r
ier
tr
an
s
p
o
r
t m
ec
h
a
n
is
m
o
n
Flo
w
o
f
d
i
s
tin
ct
ρ
-
b
ased
DG
MO
SF
E
T
m
ec
h
an
is
m
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
9
-
4
8
6
4
I
n
t J Reco
n
f
ig
u
r
a
b
le
&
E
m
b
ed
d
ed
Sy
s
t
,
Vo
l.
11
,
No
.
1
,
M
ar
c
h
20
22
:
71
-
83
76
3
.
4
.
M
o
del
m
a
t
hem
a
t
ica
l
r
epre
s
ent
a
t
io
n
Her
e,
th
e
f
lo
wch
a
r
t
o
f
b
allis
tic
MO
SF
E
T
wh
ich
is
p
r
esen
t
ed
in
F
ig
u
r
e
4
th
r
o
u
g
h
b
allis
tic
ca
r
r
ier
tr
an
s
p
o
r
t
an
d
th
e
f
lo
wch
ar
t
o
f
p
r
o
p
o
s
ed
DG
MO
SF
E
T
ca
r
r
ier
tr
an
s
p
o
r
t
m
ec
h
a
n
is
m
wh
ich
is
p
r
esen
ted
in
F
ig
u
r
e
5
as th
e
f
l
o
w
o
f
d
is
tin
ct
ρ
-
b
ased
DG
MO
SF
E
T
m
ec
h
an
is
m
is
illu
s
tr
ated
in
m
ath
em
atica
l p
r
esen
tatio
n
.
T
h
e
p
r
o
p
o
s
ed
m
o
d
el
is
illu
s
tr
ated
in
two
g
ate
ap
p
r
o
ac
h
as
f
r
o
n
t
an
d
b
ac
k
g
ate,
wh
ich
is
a
m
o
d
if
ied
f
o
r
m
o
f
b
allis
tic
co
m
p
lete
m
o
d
el
with
a
r
ea
lis
tic
DG
MO
SF
E
T
m
o
d
el
th
r
o
u
g
h
th
e
u
s
e
o
f
ca
r
r
ier
s
ac
r
o
s
s
s
u
r
f
ac
e
to
s
ca
tter
in
to
th
e
g
ate
d
o
p
in
g
r
e
g
io
n
s
with
a
lay
e
r
ca
p
ac
itan
ce
as
a
d
ep
en
d
en
t
p
ar
am
eter
n
ea
r
th
e
f
ield
r
eg
io
n
s
ac
r
o
s
s
d
is
tin
ct
ρ
-
b
ased
f
r
o
n
t
g
ate
an
d
b
ac
k
g
ate
with
p
r
o
p
o
s
ed
d
is
tin
ct
ρ
-
b
ased
p
o
s
itio
n
s
h
av
in
g
th
e
th
r
ee
g
r
ain
s
izes
f
o
r
ρ
=1
u
,
ρ
=3
u
,
an
d
ρ
=5
u
.
W
ith
th
e
f
lu
x
d
en
s
ity
co
n
ce
p
t,
th
e
to
tal
g
ate
cu
r
r
en
t
ac
r
o
s
s
th
e
th
r
ee
g
r
ain
s
with
th
e
d
r
ai
n
to
s
o
u
r
ce
cu
r
r
en
t is ex
p
r
ess
ed
as
(
1
)
.
=
=
5
=
1
−
=
3
(
1
)
wh
er
e
=
5
=
1
is
ρ
=1
u
to
ρ
=5
u
cu
r
r
e
n
t
v
ar
iatio
n
s
an
d
=
3
is
ρ
=3
u
cu
r
r
en
t
v
ar
iatio
n
s
.
Her
e
r
ep
r
ese
n
ts
a
b
allis
tic
DG
M
OSFET
m
o
d
el
th
r
ee
g
r
ain
s
izes
g
ate
cu
r
r
en
t
with
a
d
ep
en
ed
en
t
ch
a
n
n
el
g
ate
ch
an
n
el
len
g
t
h
v
ar
y
in
g
o
n
d
is
tin
ct
ρ
-
b
ased
p
o
s
itio
n
s
o
n
ly
.
An
d
with
th
e
d
i
s
tin
ct
ρ
-
b
ased
p
o
s
itio
n
s
ch
an
n
el
len
g
th
p
ar
am
eter
L
an
d
th
e
d
is
tan
ce
b
etwe
en
th
e
s
u
r
f
ac
e
cu
r
r
en
t
s
ca
tter
in
g
=
1
,
=
3
an
d
=
5
p
o
s
itio
n
v
alu
es
d
en
o
tin
g
a
s
δ
as
an
av
er
ag
e
v
alu
e.
T
h
e
ca
r
r
ier
cu
r
r
e
n
t
s
ca
tter
in
g
f
r
o
m
f
r
o
n
t
g
ate
=
1
=
5
to
war
d
s
b
ac
k
g
ate
=
3
with
th
e
ch
an
n
el
le
n
g
th
in
th
e
s
ca
tter
ed
r
eg
io
n
s
is
ex
p
r
ess
ed
as c
ar
r
ier
s
ca
tter
in
g
in
d
e
x
as
(
2
)
.
=
1
5
+
3
(
2
)
wh
er
e
is
th
e
f
r
o
n
t
to
b
ac
k
g
ate
s
ca
tter
in
g
co
ef
f
icien
ts
,
1
5
is
th
e
f
r
o
n
t
g
ate
s
ca
tter
ca
r
r
ier
co
n
ce
n
tr
atio
n
f
r
o
m
=
1
to
=
3
an
d
=
5
to
=
3
an
d
3
is
b
ac
k
g
ate
s
ca
tter
ca
r
r
ier
co
n
ce
n
tr
atio
n
f
r
o
m
=
3
to
=
1
an
d
=
3
to
=
5
.
T
h
e
p
ar
am
eter
s
f
o
r
1
5
3
ar
e
g
iv
en
b
y
(
3
)
.
1
5
=
+
3
=
+
(
3
)
wh
er
e
f
r
o
n
t
an
d
b
ac
k
g
ate
s
ca
tter
in
g
co
ef
f
icien
ts
ar
e
v
a
r
iab
le
with
δ
an
d
L
p
ar
am
eter
s
.
Fro
m
th
e
a
b
o
v
e
1
5
3
p
ar
am
eter
s
,
th
e
p
r
o
p
o
s
ed
wo
r
k
is
p
r
o
v
e
d
to
b
e
s
h
o
win
g
a
b
etter
co
m
p
ar
ativ
e
wo
r
k
th
an
t
h
e
o
th
er
DG
MO
SF
E
T
co
n
s
tr
u
ctio
n
s
,
as:
a)
W
h
en
1
5
is
co
n
s
id
er
ed
f
o
r
f
r
o
n
t
s
ca
tter
in
g
,
th
e
L
v
alu
e
is
c
o
n
s
id
er
ed
to
b
e
ef
f
ec
tiv
e
an
d
r
e
s
u
lts
in
to
cu
r
r
en
t
-
d
r
if
t
in
to
g
ate
c
h
an
n
e
l,
ef
f
ec
ctin
g
t
h
e
I
DS
v
ar
iatio
n
s
an
d
lim
itin
g
th
e
f
lo
w
o
f
c
u
r
r
en
t
ac
r
o
s
s
th
e
d
ev
ice.
b)
W
h
en
3
is
co
n
s
id
er
ed
f
o
r
b
ac
k
s
ca
tter
in
g
,
t
h
e
δ
v
alu
e
is
co
n
s
id
er
ed
to
b
e
ef
f
ec
tiv
e
an
d
r
e
s
u
lts
in
to
a
lin
ea
r
b
allis
tic
g
ate
ch
an
n
el
r
eg
io
n
,
ef
f
ec
tin
g
all
th
e
g
ate
in
je
cted
ca
r
r
ier
ch
ar
g
es to
d
ep
lete
at
s
o
u
r
ce
an
d
en
ter
s
in
to
d
r
ai
n
,
ca
u
s
in
g
th
e
co
n
tr
o
llab
le
ca
r
r
ier
co
n
ce
n
tr
at
io
n
ac
r
o
s
s
s
o
u
r
ce
a
n
d
d
r
ain
ter
m
in
als.
c)
W
h
en
1
5
3
b
o
th
ar
e
co
n
s
id
er
e
d
f
o
r
f
r
o
n
t
an
d
b
ac
k
s
ca
tter
in
g
,
th
e
m
ea
n
v
al
u
e
o
f
δ
a
n
d
L
ar
e
co
n
s
id
er
ed
o
n
th
e
ef
f
ec
tiv
e
ch
ar
g
e
ca
r
r
ier
s
m
o
b
ilit
y
o
f
elec
tr
o
n
s
,
ef
f
ec
tin
g
th
e
s
m
all
f
ield
r
eg
io
n
th
r
o
u
g
h
=
1
an
d
=
5
p
r
esen
t a
cr
o
s
s
th
e
s
o
u
r
ce
an
d
lar
g
e
f
ield
r
e
g
io
n
th
r
o
u
g
h
=
3
p
r
esen
t a
cr
o
s
s
th
e
d
r
ain
.
d)
T
h
e
m
ea
n
v
alu
e
o
f
δ
an
d
L
illu
s
tar
te
am
o
u
n
t
o
f
ch
ar
g
e
c
ar
r
ier
co
n
ce
n
tr
atio
n
with
th
e
p
r
esen
t
f
ield
co
n
tain
in
g
=
1
,
=
3
=
5
d
is
tin
ct
s
lo
ts
.
Fro
m
th
e
ab
o
v
e
an
aly
s
is
o
f
p
r
o
p
o
s
ed
d
is
tin
ct
s
lo
ts
u
s
a
g
e
an
d
im
p
lem
en
tatio
n
,
p
r
o
p
o
s
ed
wo
r
k
im
p
r
o
v
es
th
e
d
r
ain
b
ias
t
h
r
o
u
g
h
ca
r
r
ier
s
ca
tter
in
g
ac
r
o
s
s
f
r
o
n
t
g
ate
d
is
tin
ct
s
lo
ts
an
d
lim
its
th
e
s
o
u
r
ce
b
ias
th
r
o
u
g
h
g
ate
wid
th
c
o
n
tr
o
llin
g
th
r
o
u
g
h
ca
r
r
ier
in
jectio
n
s
f
r
o
m
b
ac
k
g
ate.
An
d
ca
u
s
es
th
e
s
ca
tter
in
g
ac
r
o
s
s
s
o
u
r
ce
i
s
m
in
im
ized
co
m
p
ar
e
to
d
r
ain
an
d
with
t
h
e
u
s
ag
e
o
f
d
is
tin
c
t
s
lo
ts
p
o
s
itio
n
s
,
s
ca
tter
in
g
is
co
n
tr
o
lled
at
=
1
,
=
3
=
5
,
in
-
tu
r
n
r
ed
u
ci
n
g
th
e
ca
r
r
ier
ch
ar
g
es
an
d
ca
p
ac
itan
ce
,
wh
i
ch
ar
e
in
d
e
p
en
d
e
n
t
to
ea
ch
o
th
er
.
4.
SI
M
UL
A
T
I
O
N
R
E
S
UL
T
S
AND
DIS
CUSS
I
O
N
O
F
P
RO
P
O
SE
D
M
O
D
E
L
Du
r
in
g
th
e
s
im
u
latio
n
o
f
p
r
o
p
o
s
ed
d
ev
ice,
th
e
a
n
aly
s
is
o
n
ef
f
ec
t
o
f
p
o
s
itio
n
s
o
n
th
e
g
ate
b
o
u
n
d
a
r
y
is
m
ad
e.
T
h
e
c
h
ar
ac
ter
is
tics
o
f
n
u
m
b
e
r
o
f
th
r
ee
g
r
ai
n
s
co
n
n
ec
ted
b
o
u
n
d
ar
y
s
u
r
f
ac
es
d
ep
en
d
s
o
n
ρ
v
alu
e
p
r
ed
icted
,
it
is
m
ad
e
th
r
o
u
g
h
th
e
b
allis
tic
ap
p
r
o
ac
h
f
o
r
th
e
d
ef
in
ed
d
e
v
ice
g
ate
m
ater
ial
o
f
d
ielec
tr
ic
p
o
ly
cr
y
s
tallin
e
s
tr
u
ctu
r
e
[
2
7
]
,
as
d
r
if
t
d
if
f
u
s
io
n
is
co
n
s
tan
t
at
b
o
u
n
d
ar
y
o
f
d
ev
ice
g
ate
l
ay
er
s
,
ca
u
s
in
g
th
e
u
s
ag
e
o
f
g
r
ain
s
with
s
ize
o
f
1
n
m
o
n
ly
.
C
o
m
p
ar
ativ
e
d
e
v
ice
p
ar
am
eter
s
co
n
s
id
er
ed
in
th
is
wo
r
k
ar
e
s
h
o
wn
in
T
ab
le
1
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J Reco
n
f
ig
u
r
a
b
le
&
E
m
b
ed
d
ed
Sy
s
t
I
SS
N:
2089
-
4
8
6
4
Dis
tin
ct
ρ
-
b
a
s
ed
mo
d
el
o
f sil
ico
n
N
-
ch
a
n
n
el
d
o
u
b
le
g
a
te
MOS
F
E
T
(
Ha
mee
d
P
a
s
h
a
Mo
h
a
m
ma
d
)
77
T
ab
le
1
.
C
o
m
p
a
r
ativ
e
d
ev
ice
p
ar
am
eter
s
co
n
s
id
er
e
d
f
o
r
p
r
o
p
o
s
ed
d
is
tin
ct
ρ
-
b
ased
DGM
OSFET
D
e
v
i
c
e
p
a
r
a
me
t
e
r
s
S
i
l
i
c
o
n
M
O
S
F
ET
(
C
M
O
S
)
G
a
A
s M
ESF
ET
A
l
G
a
A
s/
G
a
A
s
MO
D
F
ET
D
i
st
i
n
c
t
ρ
-
b
a
se
d
D
G
M
O
S
F
ET
M
i
n
i
m
u
m
c
h
a
n
n
e
l
l
e
n
g
t
h
(
µ
m)
0
.
1
0
.
2
0
.
1
8
0
.
2
G
a
t
e
w
i
d
t
h
(
µ
m)
0
.
1
2
5
0
.
3
7
5
0
.
3
7
5
0
.
3
4
5
D
o
p
i
n
g
(
x
1
0
18
/
c
m
3
)
2
.
0
5
.
0
5
.
0
2
.
0
Th
r
e
s
h
o
l
d
v
o
l
t
a
g
e
(
V
)
0
.
4
0
.
2
0
.
2
5
0
.
2
Fo
llo
win
g
p
r
o
p
o
s
ed
wo
r
k
ac
h
iev
ed
s
im
u
latio
n
r
esu
lts
s
h
o
w
th
r
ee
g
r
ain
s
izes
f
o
r
ρ
=1
u
,
ρ
=3
u
,
an
d
ρ
=5
u
,
r
ep
r
esen
tin
g
two
f
r
o
n
t
g
ate
g
r
ain
s
a
n
d
o
n
e
b
ac
k
g
at
e
g
r
ain
in
th
e
l
o
ca
tio
n
o
f
p
o
s
i
tio
n
s
ρ
=1
u
,
ρ
=5
u
,
an
d
p
o
s
itio
n
ρ
=3
u
r
esp
ec
tiv
el
y
.
I
n
Fig
u
r
e
s
6
,
7
,
a
n
d
8
illu
s
tr
ate
th
e
to
tal
in
ter
n
al
d
ev
ice
ca
p
a
citan
ce
v
ar
iatio
n
in
th
e
6
ρ
=1
u
,
7
ρ
=3
u
,
an
d
8
ρ
=5
u
.
C
o
m
p
ar
e
to
tr
ad
itio
n
al
DG
MO
SF
E
T
d
esi
g
n
s
f
o
r
th
e
c
o
m
p
ar
is
o
n
b
etw
ee
n
p
er
f
o
r
m
an
ce
o
f
p
r
o
p
o
s
ed
ap
p
r
o
ac
h
an
d
liter
atu
r
e
s
u
r
v
e
y
ap
p
r
o
ac
h
es,
r
esu
lt
s
ac
h
iev
ed
in
th
e
p
r
o
p
o
s
ed
D
G
MO
SF
E
T
d
esig
n
ar
e
illu
s
tr
ated
:
a)
T
h
e
lo
ca
tio
n
o
f
p
o
s
itio
n
s
is
m
o
v
ed
th
r
o
u
g
h
th
e
d
ev
ice
th
r
esh
o
ld
v
o
ltag
e
b
y
v
ar
y
i
n
g
th
e
d
ev
ice
ca
p
ac
itan
ce
with
ze
r
o
v
ar
iatio
n
s
o
f
d
e
v
ice
g
ate
g
r
ain
p
o
ly
s
ilico
n
b
o
u
n
d
a
r
y
in
th
eir
d
is
p
lac
em
en
t,
wh
ich
is
a
n
ew
r
esu
lt
ac
h
iev
ed
in
t
h
e
p
r
o
p
o
s
ed
d
esig
n
,
b
ec
au
s
e
in
tr
ad
itio
n
al
DG
MO
SF
E
T
,
th
e
lo
ca
tio
n
s
o
f
p
o
s
itio
n
s
ar
e
s
tatic
an
d
d
o
n
o
t
p
r
o
v
id
e
d
esira
b
le
th
r
esh
o
ld
v
o
ltag
e.
b)
T
h
e
d
ev
ice
th
r
ee
g
ate
d
r
ain
v
o
ltag
e
is
ch
o
s
en
to
b
e
m
ax
im
u
m
at
ρ
=3
u
lo
ca
tio
n
an
d
in
cr
ea
s
es
it
s
s
u
r
f
ac
e
p
o
ten
tial
ac
r
o
s
s
ρ
=1
u
an
d
ρ
=
5
u
,
ca
u
s
in
g
t
h
e
d
r
ain
v
o
ltag
e
to
i
n
cr
ea
s
e
f
u
r
th
er
,
wh
ich
is
a
n
ew
r
esu
lt
ac
h
iev
ed
in
th
e
p
r
o
p
o
s
ed
d
esig
n
,
b
ec
au
s
e
in
tr
ad
itio
n
al
DG
MO
SF
E
T
,
th
e
th
r
ee
g
ate
d
r
ain
v
o
ltag
es
ar
e
v
ar
ied
in
eith
er
p
o
s
itiv
e
o
r
n
eg
ativ
e
g
ate
v
alu
es
an
d
d
o
n
o
t
p
r
o
v
id
e
d
esira
b
le
d
r
ain
v
o
ltag
e
an
d
th
e
in
tr
u
s
io
n
d
etec
tio
n
s
y
s
tem
s
(
I
DS
)
u
s
ag
es.
c)
Acr
o
s
s
th
e
g
r
ain
b
o
u
n
d
ar
y
,
t
h
e
ch
an
n
el
g
ate
d
ev
ice
p
o
ten
tia
l
is
r
ed
u
ce
d
,
ca
u
s
in
g
th
e
ch
a
n
n
el
to
p
r
o
v
id
e
a
u
n
if
o
r
m
c
u
r
r
en
t
f
lo
w
in
th
e
cr
y
s
tallin
e
s
tr
u
c
tu
r
e
o
f
DG
MO
SF
E
T
,
wh
ich
is
a
n
ew
r
es
u
lt
ac
h
iev
ed
in
th
e
p
r
o
p
o
s
ed
d
esig
n
,
b
ec
a
u
s
e
in
tr
ad
itio
n
al
DG
MO
SF
E
T
,
th
e
g
r
ain
b
o
u
n
d
ar
y
is
n
o
t
c
o
n
s
id
er
ed
f
o
r
v
ar
y
in
g
ch
a
n
n
el
g
ate
v
o
ltag
e
v
ar
iatio
n
s
an
d
d
o
n
o
t
p
r
o
v
id
e
d
esira
b
le
cu
r
r
en
t
f
lo
w
a
n
d
c
h
an
n
el
le
n
g
t
h
v
ar
iat
io
n
s
.
d)
T
h
e
b
o
u
n
d
a
r
y
p
o
s
itio
n
s
o
f
th
e
s
e
th
r
ee
g
r
ai
n
ch
ar
g
es
ar
e
e
q
u
alize
d
with
u
n
d
er
ly
in
g
SiO2
,
wh
ich
is
a
n
ew
r
esu
lt
ac
h
iev
ed
in
th
e
p
r
o
p
o
s
ed
d
esig
n
,
b
ec
au
s
e
in
tr
ad
itio
n
al
DG
MO
SF
E
T
,
th
e
f
r
o
n
t
an
d
b
ac
k
g
r
ain
b
o
u
n
d
ar
y
ch
a
r
g
es
ar
e
n
o
t
eq
u
alize
d
to
p
r
o
v
id
e
u
n
if
o
r
m
d
o
p
in
g
lev
els
an
d
d
o
n
o
t
p
r
o
v
id
e
d
esira
b
le
p
o
s
itio
n
esti
m
atio
n
s
f
o
r
g
ate
to
ch
an
n
el
len
g
th
d
is
tan
ce
an
d
d
is
tin
ct
s
lo
ts
to
allo
ca
te
with
VG
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d
VD
v
ar
iatio
n
s
.
.
Fig
u
r
e
6
.
C
h
an
n
el
ch
ar
ac
ter
is
t
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o
r
d
is
tin
ct
ρ
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o
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o
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e
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r
o
p
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is
tin
ct
ρ
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ased
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co
n
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x
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n
m
p
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g
r
ai
n
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o
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n
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ig
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ct
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r
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ter
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1
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V.
T
h
e
DG
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T
cr
y
s
tallin
e
s
tr
u
ctu
r
e
is
co
n
s
id
er
ed
with
d
i
elec
tr
ic
co
n
s
tan
t
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alu
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o
f
1
,
3
an
d
5
,
as
s
h
o
wn
in
F
ig
u
r
e
6
,
th
r
o
u
g
h
co
n
s
id
er
in
g
b
o
th
ρ
-
f
r
o
n
t
g
at
e
g
r
ain
s
s
tack
s
an
d
ρ
-
b
ac
k
g
ate
g
r
ain
s
tack
.
I
n
Fig
u
r
e
1
1
,
t
h
e
v
ar
iatio
n
s
o
f
t
h
r
esh
o
ld
v
o
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e
with
th
e
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e
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ice
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el
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o
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ates v
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ates v
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