In
te
r
n
ation
a
l Jou
rn
al
o
f Po
we
r
Elec
tron
ic
s an
d
D
r
ive S
y
stem
(IJ
PED
S
)
V
o
l.
10, N
o.
1, Mar
ch 20
19,
p
p.
398~
4
0
5
IS
S
N
: 2088-
86
94,
D
O
I
:
10.11
59
1
/ij
ped
s
.
v10
.
i
1.pp
3
98-
40
5
398
Jou
rn
a
l
h
o
me
pa
ge
:
ht
tp:
//i
a
e
score
.
com
/
j
o
u
r
na
l
s
/
i
n
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e
x
.
p
hp/IJ
PED
S
A modelin
g and p
erfo
r
man
ce of t
h
e
triple field plate HEMT
Ko
urdi
Z
ak
a
r
y
a
1
,
A
b
de
lk
ha
d
e
r
H
a
m
d
o
u
n
2
1
GAS
D
epart
m
e
n
t
,
Cent
e
r sa
t
e
ll
it
es d
evelo
p
m
e
n
t
s,
Ag
e
ncy
S
p
ace
Al
geri
an, Alg
eria
2
El
ectronic
D
e
part
ment,
U
niv
e
rs
it
y
of
T
l
e
m
cen,
A
lg
eria
Art
i
cl
e In
fo
ABSTRACT
A
r
tic
le hist
o
r
y
:
Re
ce
i
v
e
d
Ju
l
2
5,
201
8
Re
vise
d S
e
pt 2
8,
201
8
Ac
ce
p
t
ed
Oc
t
1
2
,
2
018
W
e
p
r
e
s
e
n
t
t
h
i
s
w
o
r
k
b
y
t
w
o
s
t
e
p
s
.
I
n
t
h
e
f
i
r
s
t
o
n
e
,
t
h
e
n
e
w
s
t
ructure
pro
p
o
s
ed
o
f
t
h
e
F
P
-
H
E
MTs
d
e
vi
ce
(
F
i
eld
plate
H
i
g
h
E
l
ectro
n
M
obi
li
t
y
Transistor)
wit
h
a
T
-gat
e
on
a
n
4H-SI
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s
ub
stra
te
t
o
o
p
t
i
m
i
z
e
th
es
e
el
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c
trical
perf
ormances,
mul
tiple
f
i
e
ld-pla
te
s
we
r
e
u
se
d
wi
th
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lu
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ngle
electri
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fi
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peak
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nto
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all
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p
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as
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rks
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ed
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current
.
In
t
he
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t,
w
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i
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cl
ud
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m
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deli
ng
of
a
s
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in
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T
cad-S
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of
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w
are
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o
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reali
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st
udy
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th
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inf
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nce
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lt
age
ap
pl
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t
o
g
a
t
e
T-shap
ed
i
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OF
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s
tate
time
and
hi
gh
p
o
w
er
w
ith
a
m
b
ient
t
em
peratu
re,
th
e
perf
o
r
man
ce
di
ff
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r
en
ce
s
b
e
tween
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e 3FP
an
d the S
FP
devi
ces are dis
cus
s
ed
in det
a
il.
K
eyw
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s
:
F
i
e
l
d
p
l
at
e
HEMT
Qu
a
n
t
u
m
mo
de
l
Tcad-silvaco
Co
pyri
gh
t © 2
019 In
stit
u
t
e
of Advanced
En
gi
neeri
n
g
an
d
S
c
ien
ce.
All
rights
res
e
rv
ed.
Corres
pon
d
i
n
g
Au
th
or:
Ko
u
r
di
Zak
a
r
ya,
G
A
S
D
epa
r
tment,
C
e
n
te
r sa
te
l
l
i
t
es de
v
el
o
p
m
e
nts
Agenc
y
Spa
ce
Algeria
n,
POS
50
ILO
T
T1
2
Bi
r
El D
j
ir
O
ran,
A
lge
r
ia.
Em
ail:
zko
u
rd
i
@
h
o
t
m
a
il.fr
1.
I
N
TR
OD
U
C
TI
O
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R
e
sea
r
ch
c
on
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e
rn
in
g
of
a
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EM
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d
e
v
i
ce
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a
s
s
i
gn
if
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c
ant
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rts
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n
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id
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ex
p
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w
sol
u
tio
n
for
op
t
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a
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perform
ance
w
i
t
h
se
ve
ral
do
ma
i
n
s
se
arc
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e
r
y
ac
ti
ve.
T
h
e
in
no
va
tive
tec
h
n
o
lo
gy
o
f
t
h
is
d
e
v
i
c
e
ty
pe
c
an
a
ls
o
b
e
a
t
t
ri
b
u
te
d
to
t
he
a
d
o
p
t
i
o
n
w
i
t
h
no
v
e
l
s
truc
tur
es
a
nd
a
n
al
y
s
is
o
pera
ti
ng pr
i
n
c
i
ple
s
p
r
o
c
e
ss
[1]
,
su
ch
a
s
th
e
dyn
a
m
i
cal
ly
dop
in
g/
d
e
do
p
i
ng
[
2].
Th
e
a
p
p
l
i
c
atio
n
o
f
the h
i
g
h brea
k
dow
n
fie
l
d eff
ect [3],
[4]. The
team
h
a
s
b
ee
n
cr
eated
d
i
f
fer
e
nt
s
truc
ture
f
or
f
ie
ld
p
late
s
on
G
a
N
H
EM
T
slan
t
s
t
ruc
t
u
r
es
[
5]
,
2nd
p
l
a
t
e
[6]
,
s
u
c
h
a
s
F
i
e
l
d
p
l
a
t
e
s
(
F
P
s
)
,
i
n
c
l
u
d
i
n
g
s
o
u
r
c
e
F
P
s
(
S
F
P
s
)
[
7
]
,
g
a
t
e
F
P
s
(
G
F
P
s
)
[
8
]
,
a
n
d
m
u
l
t
i
-
F
P
s
(
M
F
P
s
)
[
9
]
,
[1
0],
[1
1].
M
ode
l
i
ng
a
n
ew
s
truc
ture
a
s
pos
si
ble
a
s
o
f
the
nex
t
g
en
era
tion
o
f
d
evi
c
e
c
r
e
a
t
i
v
e
s
t
r
u
c
tu
re
i
n
t
h
e
nex
t
g
e
n
er
at
io
n
of
t
he
m
ateri
a
l
II
I-N
has
inte
rest
i
n
th
is
r
ese
a
r
ch,
S
i
mula
t
i
on
Tca
d
-
S
il
vac
o
s
o
f
tw
ar
e
pro
g
ra
m
and
su
pe
rfic
ia
l
ge
ne
t
i
c
a
l
gor
ithm
[12]
c
a
n
h
elp
for
pri
v
a
t
e
ana
lys
i
s
a
ne
w
prop
osed
s
tr
uct
u
re
.
The
a
ccur
a
te
resul
t
s
proc
e
s
s
exa
m
ina
t
io
n
ne
ed
s
m
a
ny
mode
l’s
p
h
y
s
ic
s
approa
c
h
c
an
b
e
de
l
i
ver
e
d
b
y
a
hydr
o
dyna
mic
or
qua
n
t
um
m
ode
l
[1
3].
T
h
e
m
a
i
n
f
e
a
t
u
r
e
s
o
f
o
u
r
m
o
d
e
l
a
s
p
r
o
p
o
s
e
d
i
n
t
h
i
s
w
o
r
k
a
q
u
a
n
t
u
m
m
obi
lit
y
mode
l
s
f
or
t
he
pec
u
l
i
ar
itie
s
o
f
t
he
I
I
I-N
m
ateria
l
proce
ss
syst
e
m
[
1
4
].
A
s
oft
w
a
r
e
s
i
m
u
l
at
ion
use
d
f
or
i
m
p
lem
e
nte
d
ca
l
i
bra
t
e
d
s
e
t
u
p
i
n
a
dev
i
ce
from
a
re
cen
t
gener
a
tio
n
o
f
a
H
E
M
T
w
it
h
ad
apt
s
p
h
y
si
c
s
m
od
el
s.
A
h
i
g
h
prec
isio
n f
o
r a
l
l
rele
va
nt cha
r
a
c
t
e
r
is
tic
s
w
a
s achie
ve
d.
A
t
t
h
e
m
om
ent
,
M
odern
m
e
t
hods use
d
f
o
r
de
scrib
i
n
g
t
he de
v
ice
c
h
a
r
ac
t
e
risti
c
s
k
eep
a
b
r
east
of
r
ap
i
d
and
e
f
fec
tive
pr
ogress
i
n
d
e
v
isi
ng
s
o
l
u
t
i
o
n
s
a
nd
mi
n
i
miz
i
n
g
t
he
m
argi
n
o
f
u
nce
r
ta
in
t
y
b
e
li
m
i
te
d
an
d
r
e
du
c
e
the
time
o
f
f
indi
n
g
t
he
opt
im
u
m
d
a
t
a.
A
mong
the
sem
i
-
c
l
a
ssica
l
m
ode
ls
a
nd
M
o
n
t
e
Ca
rlo
me
th
od
o
f
fe
r
the
deta
i
l
e
d
e
x
p
l
a
nat
i
o
n
of
t
he
s
o
l
u
t
i
o
n
b
u
t
i
s
lim
it
e
d
i
n
re
al
ist
i
c
e
n
gine
eri
n
g
a
p
plica
t
i
o
ns
f
or
i
ts
c
om
p
u
t
a
t
i
o
na
l
expe
nse
s
[1
5
].
A
ll
e
l
e
m
e
n
t
s
i
ntr
i
ns
i
c
,
e
x
t
r
i
n
sic
a
n
d
para
s
i
t
i
c
of
d
e
v
ice
(d
ue
t
o
c
o
n
n
e
ct
ing
wi
r
e
s,
m
eta
l
l
i
c
c
o
n
t
a
c
t
s,
pac
k
a
g
ing,
e
tc.)
a
re very importa
nt
inde
x
i
n
hi
g
h fre
que
ncy
,
in
t
his
ca
se a sm
a
ll
si
g
n
a
l
cir
cui
t
e
qu
iva
l
e
n
t ca
n't
Evaluation Warning : The document was created with Spire.PDF for Python.
Int J
P
o
w
El
e
c
&
D
ri S
yst
I
S
S
N
:
2088-
86
94
A m
odel
i
ng a
n
d
pe
r
f
orm
anc
e
of
the
tr
iple
f
i
e
l
d
p
l
ate
H
E
MT
(
K
our
d
i
Z
a
k
a
r
y
a)
39
9
be
b
e
c
om
e
c
o
mpa
r
able
w
i
t
h
t
h
e
para
si
tic
p
a
r
am
eter
s.
W
e
ha
ve
c
a
l
i
b
ra
te
d
s
i
mula
t
i
on
a
base
o
f
t
h
e
c
a
l
cu
la
te
the
s
e
v
a
l
u
es
w
it
ho
ut
a
n
y
d
iscre
p
a
n
cy
i
n
neg
l
ec
tin
g
or
i
nacc
urat
e
l
y.
T
o
a
c
c
u
r
a
te
l
y
s
o
l
ve
a
p
r
oble
m
w
i
t
h
para
sitic
e
lem
e
nt
s,
i
n
or
d
e
r
to
p
ro
v
i
de
a
m
or
e
acc
urate
re
prese
n
t
a
t
i
on
of
t
he
p
ar
asi
t
ic
e
l
e
me
n
t
s,
a
p
r
o
b
l
e
m
nee
d
t
he
e
m
phas
i
s
i
n
s
o
l
ve
by
th
e
re
nderi
ng
d
ev
ice
per
f
orm
a
nc
e
h
a
s
af
f
ect
e
d
b
y
ma
ny
si
m
u
lta
ne
ous f
actors
[16].
A
sol
u
t
i
on
for
th
us
e
nha
nc
in
g
t
h
e
dev
i
ce
p
e
r
form
anc
e
a
n
d
t
he
ir
ex
tre
m
e
t
h
i
nne
ss
al
le
via
t
e
s
h
ort-
cha
nne
l
effect
s
w
i
t
h
t
his
te
c
h
n
o
l
og
y
[17],
t
h
e
fa
br
icat
i
o
n
of
d
o
u
b
l
e
ga
te
d
ev
ice
w
h
ic
h
ne
e
d
c
om
p
l
ic
ate
d
tech
n
o
l
o
gy
a
nd
has
be
e
n
n
o
t
d
ese
r
v
i
ng
a
com
p
le
t
e
s
pec
i
a
l
a
tte
n
t
ion
irrespe
c
tive
ha
s
bee
n
very
e
x
p
ens
i
ve
[
18].
Whi
l
e
t
hi
s
p
a
pe
r
f
o
cu
se
d
on
t
h
e
a
nalysis
results
a
bi
a
s
ed
o
f
t
h
e
qua
n
t
um
m
odel
s
,
new
Mo
n
t
e
Carl
o
met
h
od
a
nd
g
en
et
i
c
a
lgo
r
i
t
h
m
f
o
r
f
o
und
o
pt
ima
l
c
i
r
c
u
it
e
q
u
i
v
a
l
e
nt
h
as
b
ee
n
ve
rifie
d
w
it
h
stu
d
y
al
l
s
i
de
e
ffec
t
to pr
o
v
i
de
a
c
orre
ct phys
ica
l
i
ns
ig
h
t
i
n
t
o
t
h
e
de
vic
e
pr
o
p
e
rt
i
e
s.
2.
DEVICE
A
N
D
M
O
D
E
L
ING
The
de
vi
ce
is
s
how
n
in
F
igu
r
e
1(a
)
.
The
first
co
ntac
t
S
c
ho
ttk
y
u
s
e
d
G
o
l
d
"
A
u
"
f
o
r
a
w
i
d
e
r
h
e
a
d
T
-
sha
p
ed
g
a
t
e
pr
oc
ess
e
l
e
c
t
rod
e
.
Then,
so
urc
e
/dra
in
/fie
l
d
p
l
a
te
e
l
e
c
t
r
o
d
e
s
w
e
r
e
f
o
r
m
e
d
b
y
"
A
u
"
(
2
5
0
n
m
)
a
r
e
cho
s
en
f
or
o
h
m
ic
c
on
tac
t
s,
t
he
d
e
v
ice
de
sign
fe
a
t
ures
a
h
ete
r
os
tr
u
c
t
u
r
e
I
n
0.
1
8
Al
0.
8
2
N/
G
a
N,
w
h
e
r
e
t
he
peri
pher
y
o
x
i
d
e
A
l
2
O
3
of the
G
a
te
i
s
a differe
nce
w
i
t
h
con
v
e
nt
i
ona
l de
s
i
gn
s [19].
Th
is
g
ive
s
r
is
e
to
a
c
o
n
duc
tio
n
ba
n
d
s
ha
pe
f
or
t
he
b
arr
i
e
r
t
ha
t
,
for
th
e
s
a
me
s
heet
c
arr
i
er
conc
e
n
trat
io
n
base
d
o
n
m
o
d
e
l
F
u
j
i
t
s
u
[
20]
,
the
H
a
l
l
m
o
b
i
lit
y
a
n
d
sh
e
e
t
c
a
rri
e
r
co
n
cen
t
r
a
t
ion
we
re
1300
c
m
2
V
-1
s
-1
a
nd 1 ×
10
13
cm
-2
.
The he
ter
o
j
u
nct
i
o
n
f
ea
t
u
res a
shee
t cha
r
ge
d
e
n
si
ty
o
f 1.
8
5
x
1
0
13
c
m
2
.
The
perf
orma
nce
of
t
h
i
s
de
vi
ce
b
een
s
im
u
l
a
t
e
d
by
Tca
d
-S
il
va
c
o
s
oftwar
e.
W
e
use
tw
o
ste
p
s
fo
r
si
m
u
late
d
t
h
i
s
d
ev
ice
:
T
he
f
ir
st
s
te
p
foc
u
se
d
to
c
re
ate
a
s
t
ruc
t
u
re
i
n
t
h
e
fr
a
m
e
w
ork
D
e
vEd
it.
T
he
s
ec
o
nd
s
t
e
p
f
o
cu
ses
to
a
n
a
l
y
ze
t
hi
s st
ru
c
t
ure i
n
t
h
e
f
ramewo
rk
At
l
as
sy
s
t
e
m
.
We se
e
in t
h
e F
i
gure 1(b) a c
ross
sec
t
i
o
n o
f
the s
truc
ture,
it
’
s loc
a
te
d ove
r
the
la
ye
r of s
u
b
str
a
te (4H
-
S
i
C).
We
p
res
e
nt
e
a
c
h
t
he
l
a
y
er
i
n
the
fl
ow
:
We
f
i
n
d
t
h
a
t
t
he
c
o
l
or
g
o
l
d
r
e
gi
on
c
orre
sp
on
ds
t
o
t
h
e
e
l
e
c
tro
d
es
(i.e
.
the
fie
l
d
pla
t
e
,
s
o
u
r
ce,
d
r
a
i
n
a
n
d
g
a
t
e
)
,
the
col
o
r
br
own
c
orr
e
spo
n
d
s
t
o
l
aye
r
s
o
f
t
he
c
h
a
nne
l
a
nd
c
a
p
layer
,
the
c
o
l
or
re
d
c
or
resp
on
ds to
la
yers of a
d
o
n
o
r an
d S
c
ho
t
tk
y, the
b
uffer an
d spa
cer
l
aye
r
s
c
o
rre
spo
nds
t
o
gree
n c
o
l
o
r
an
d
fi
na
lly
g
ray
c
o
l
o
r
regio
n
s co
r
r
espon
d t
o
the
s
u
bstr
ate.
F
i
gure
1.
V
iew
struc
t
u
r
e
H
E
MT InA
lN
/G
a
N
tripl
e
f
i
e
l
d
p
l
ate i
n
l
e
f
t s
h
o
w
n 3D
t
rip
l
e
F
P
-
H
E
M
T
i
n s
ilva
c
o-
tcad
a
n
d
i
n o
t
h
e
r
side
o
f t
h
e
lon
g
i
t
u
dina
l
sec
t
i
o
n of t
he
d
e
v
i
c
e
Wh
ile
i
n
th
is
p
ape
r
i
s
foc
u
s
o
n
i
ll
ustra
t
i
o
n
desi
g
n
t
he
H
EMT
s
t
ru
ct
ure
d
e
vi
c
e
p
ropo
sed
fo
r
th
e
op
tim
iza
t
i
o
n
p
r
oce
s
s
u
s
in
g
a
gene
tic
a
lg
ori
t
hm
t
o
e
x
tr
ac
t
t
h
e
d
evi
c
e
di
me
n
s
i
o
n
s
,
you
s
h
oul
d
kn
o
w
t
h
a
t
i
t
i
s
thr
o
u
g
h
a
w
ell-des
i
g
n
e
d
s
truc
tur
e
,
you w
i
l
l
:
a.
I
m
prove
the
p
e
rforma
n
ce
w
ith
m
i
n
im
iz
in
g ad
ve
rse
effect c
o
n
t
e
n
t
.
b.
La
rger
safe op
e
r
ati
ng a
r
ea
.
c.
Hi
gh
s
wi
t
c
hi
ng sp
e
e
d
.
I
t
i
s
t
h
er
efor
e
poss
i
ble
to
c
ali
b
rate
t
he
H
EMT
m
o
del
u
s
i
n
g
sim
p
l
i
fi
e
d
d
e
v
ice
ge
o
m
etry,
so
car
e
sh
ou
ld
b
e
t
a
k
e
n
to
f
ind
i
n
it
i
a
l
v
a
lu
e
s
a
s
cl
o
s
e
a
s
p
ossi
bl
e
to
the
op
tim
al
c
ali
b
ra
ti
on
p
o
i
n
t
.
F
r
om
t
he
s
c
o
re
t
he
op
tim
izer
gene
r
ate
s
a
n
ew se
t
of
mode
l
para
me
ters w
hi
c
h
ar
e
the
n use
d
f
o
r
the
nex
t sim
u
l
a
t
i
on
ru
n [21]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SSN: 2088-
8694
I
nt
J
P
ow
Elec
& Dr
i
S
y
st, Vol. 10,
N
o.
1, Mar
c
h 2
0
1
9
:
39
8 –
40
5
40
0
3.
RESULT
S
A
N
D
I
N
TE
RPETAT
IONS
Th
e
ga
t
e
l
en
gth
of
t
h
e
d
ev
i
c
e
i
s
L
G
=
15
n
m
i
n
t
h
i
s
w
ork
.
W
e
simula
te
d
the
de
vic
e
w
it
h
S
i
l
v
a
c
o
-
Tca
d
s
o
f
tw
a
r
e.
W
e
dem
o
ns
t
r
ated
3
D
dev
i
c
e
m
odel
i
ng
o
f
a
n
InA
l
N
/
G
a
N
H
EM
T
w
ith
qua
ntum
c
orrecti
o
n,
w
h
ic
h
w
a
s
spec
i
f
i
e
d
w
i
t
h
t
hree
d
iffere
n
t
s
tate
me
nts.
A
G
D
EVICE
c
on
fines
the
M
C
e
le
c
t
ro
ns
t
o
t
h
e
4H
-S
i
C
sub
stra
te
.
A
s
a
r
e
s
ult,
t
h
e
"
Elec
t
r
on
C
onc"
an
d
"A
ve
ra
ge
E
lec
t
ro
n
Conc
"
f
i
e
l
d
s
i
n
the
de
v
i
c
e
s
do
n
o
t
s
how
elec
tr
ons
i
n
t
h
e
o
x
i
d
e
e
v
e
n
t
ho
u
g
h
e
l
ec
tro
n
pe
netra
t
i
o
n
o
f
t
he
I
n
AlN
b
a
rrier
i
s
c
o
nsi
d
er
ed
a
s
pa
r
t
o
f
t
h
e
mode
l.
T
h
i
s
ch
oice
i
s
co
n
v
en
t
i
o
n
a
l
.
The
m
o
d
e
l
r
easona
bly
p
r
edic
t
s
t
h
e
i
m
p
a
c
t
o
f
q
u
a
n
t
u
m
s
i
z
e
e
f
f
e
c
t
s
o
n
t
h
e
elec
tr
on co
nc
e
n
tra
t
i
o
n a
nd t
h
e te
rmina
l
c
urr
e
nt
s [2
2].
A
f
ter
the
d
e
fi
ni
tio
n
o
f
t
he
H
EMT
struc
t
u
r
e
and
m
a
ter
i
a
l
s
use
d
f
or
m
ode
l
,
t
he
i
n
i
t
i
a
l
s
o
l
u
t
ion
is
ob
ta
ine
d
f
r
o
m
the
g
a
te
v
o
l
t
a
g
e
s
et
t
o
z
e
ro,
the
struc
t
ure
un
der
z
ero
bia
s
(
the
in
it
ial
c
a
se
r
eported
for
s
u
p
p
l
y
vo
lta
ge
s),
and
the
so
lut
i
ons
a
r
e
o
b
t
a
i
ne
d
fro
m
the
ch
o
i
ce
s
spec
i
f
ied
i
n
t
he
a
lg
ori
t
hm
,
to
o
b
t
a
i
n
i
ng
a
d
e
pt
h
cha
r
ac
t
e
riza
t
i
o
n
from
the sim
u
l
a
tio
n.
A
c
cura
te
s
im
u
l
a
t
ion
resu
l
t
s
ca
n
be
o
bta
i
n
e
d
b
y
s
olv
i
n
g
qua
n
t
um
ge
n
e
tic
s
m
o
del
phys
ics
for
si
m
u
lat
i
on the
anal
yze
de
v
i
c
e
pe
rfor
ma
n
c
e [23],
the de
v
i
ce
tem
p
era
t
ur
e i
s
not at a
ll co
ns
ta
nt, espec
ia
l
l
y a
t
t
he
gate
e
x
it
in
t
h
e
r
eali
t
y
for
t
h
at
t
he
s
im
ula
t
i
o
n
has
be
e
n
b
eg
i
n
3
0
0
K
a
nd
th
is
v
a
l
ue
i
s
h
i
g
h
er
w
it
h
time
,
spec
ia
lize
d
n
u
m
e
r
ical
t
e
c
h
n
i
que
s
requ
ire
d
f
or
t
ha
t
G
I
G
A
m
odel
s
h
o
u
l
d
be
u
se
d
to
s
i
m
ula
t
e
the
hea
t
-f
l
o
w
in
the
de
v
i
c
e
[
24
],
it's
inc
l
u
d
e
d
h
ea
t
ge
ne
rat
i
on,
h
e
a
t
f
low
,
l
at
t
ice
hea
t
i
n
g,
h
eat
s
in
ks,
and
effec
t
s
of
l
oca
l
tem
p
era
t
ur
e
o
n
p
h
y
s
i
c
a
l
c
o
n
s
ta
nts
w
i
th
B
LA
ZE
m
ode
ls
f
r
o
m
Tc
a
d
-S
il
va
c
o
s
o
f
twar
e
ar
e
c
oup
le
d
t
h
ro
ug
h
self-c
ons
i
s
te
nt
c
alcu
la
t
i
o
n
s
[2
5].
3.1.
D
C r
e
su
lts
I
n
t
h
i
s
de
v
i
c
e
s
imula
t
i
on,
t
he
e
lec
t
r
i
c
a
l
t
r
ans
f
er
a
nd
ou
t
p
u
t
c
hara
cter
i
s
t
i
cs
a
re
ill
ustr
ate
d
i
n
F
i
g
u
r
e
2
.
We
c
ha
n
g
ed
t
he
acc
elera
tio
n
o
f
t
he
d
r
a
i
n
v
o
l
tage
b
e
t
we
en
0
V
t
o
3
V
,
w
h
e
n
t
h
e
s
i
m
u
l
a
t
i
o
n
w
a
s
f
i
r
s
t
con
d
u
cte
d
t
o
o
b
ta
i
n
t
he
I-V
c
har
acte
r
i
s
t
i
c
in
t
he
D
C
m
ode
t
o
c
h
a
nge
t
he
s
ta
te
o
f
t
h
e
ga
t
e
v
o
l
t
a
g
e
b
y
5
di
ffe
re
nt b
ias
v
a
lue
s
,
V
GS
=
1
.0 V
t
o -
4.0 V
w
i
t
h
a
step of -1.
0 V
for
both
H
E
MTs.
The
inc
r
ea
sin
g
l
y
posi
t
ive
drain
vo
l
t
a
g
e
led
to
t
he
e
lectr
i
c
fie
l
d
acr
o
ss
t
h
e
cha
n
nel
i
n
c
r
ea
sing
the
spee
d
of
t
he
e
l
ectro
n.
T
he
v
o
l
tage
d
istr
ib
ut
i
on
ac
ro
ss
t
h
e
c
h
a
n
ne
l
le
d
t
o
a
v
o
l
tage
d
i
ffe
re
nc
e
be
tw
een
t
h
e
g
a
t
e
and
the
c
h
a
n
n
e
l
a
l
o
ng
it,
w
it
h
t
h
e
t
r
ans
i
sto
r
d
em
ons
t
r
at
i
n
g
a
v
ari
a
b
l
e
re
sis
t
anc
e
b
e
h
av
ior
c
o
n
t
r
o
l
l
e
d
by
t
h
e
gate
v
olta
ge
a
nd
t
h
e
no
t
e
i
s
w
i
t
h
F
P
tha
t
r
e
g
i
on
i
s
l
a
r
ge.
Th
is
i
n
d
i
c
a
t
e
s
e
x
ce
lle
n
t
g
ate
co
ntro
l
of
t
he
2
DEG
cha
nne
l
[2
6],
a
n
d
the
ma
x
i
m
u
m
drain
cur
r
en
t
a
v
a
ila
bl
e
r
e
a
c
hed
2
0
5
6
m
A
/
m
m
i
n
t
he
f
irs
t
a
nd
2
450
m
A
/
mm
in t
he
o
the
r
,
when
V
GS
was biased
at 0.
0
V &
V
DS
=3
.0
V.
Evaluation Warning : The document was created with Spire.PDF for Python.
Int J
P
o
w
El
e
c
&
D
ri S
yst
I
S
S
N
:
2088-
86
94
A m
odel
i
ng a
n
d
pe
r
f
orm
anc
e
of
the
tr
iple
f
i
e
l
d
p
l
ate
H
E
MT
(
K
our
d
i
Z
a
k
a
r
y
a)
40
1
F
i
gure
2.
The
t
ransfe
r c
u
rve
si
m
u
la
te
d
w
ith
V
DS
f
ixed be
t
ween
2
V to
V
DD
a
nd V
GS
sw
e
e
p
in
g
from
1
V to
−
10 V
, t
he DC Output chara
c
t
eris
tic
s of
t
he
InA
lN
/G
a
N
H
E
MT w
i
t
h
a ga
t
e
le
n
g
t
h of 1
5 nm
a
nd V
GS
ste
ppe
d
from
1.0
V
to
−4.
0
V
i
n
s
t
e
p
s o
f
−
1.
0 V
The
pi
nc
h-
o
f
f
v
o
l
t
a
g
e
w
a
s
fo
u
nd
to
b
e
−
4
.0
V
,
a
s
s
h
o
w
n
in
F
igur
e
2(b),
w
h
ic
h
v
a
l
i
da
tes
t
h
e
su
i
t
a
b
il
i
t
y
o
f
S
c
hott
k
y
c
o
nt
a
c
t
s
tec
h
no
log
y
f
or
I
nA
l
N
/G
aN
h
ete
r
ostruc
t
u
re
w
i
t
h
impr
o
v
e
d
d
e
v
i
c
e
p
e
rfo
rma
n
c
e
[
2
7
]
.
Th
e
ex
t
r
i
n
si
c
t
r
a
n
sco
nduc
t
a
n
c
e
(g
m)
c
h
a
rac
t
e
r
ist
i
c
s
o
f
the
de
vice
,
wher
e
t
h
e
simu
l
a
ti
o
n
i
s
extra
c
t
ed
d
isp
l
ays
a
m
a
ximu
m
peak
g
m
a
s
8
4
0
m
S
/
mm
f
or
3
FP
and
5
6
0
m
S/mm
f
o
r
SF
P
at
V
DS
=
5
.0
V
.
T
h
i
s
pea
k
a
p
p
ear
s
i
n
t
he
c
ur
ve
o
f
t
h
e
tra
n
sc
on
d
u
cta
n
ce
a
s
a
d
e
pen
d
e
n
ce
o
n
t
he
g
a
t
e
b
i
as
VGS.
The
si
m
u
la
te
d
HEM
T
d
evi
c
e
n
o
t
i
c
eabl
y
r
e
f
l
e
c
t
s
t
h
e
DC
b
eh
avi
o
r
v
a
riou
s
op
e
r
at
i
n
g
c
on
d
i
t
i
on
s,
w
hic
h
c
orre
sp
ond
t
o
t
h
e
2DEG
i
s
a
f
fe
ct
ed
b
y
the
presenc
e
o
f
cha
r
ge
d
spec
i
e
s
from
the
c
h
an
ne
ls
m
odu
la
ted
s
h
e
e
t
d
e
n
s
i
t
y
by
d
i
ffe
r
en
t
gate
v
olta
ge
s. These
p
erforma
n
ces are
be
t
te
r
qua
li
t
y
o
f t
h
e
va
l
ue
s e
a
rl
ier repor
t
e
d for
t
h
e dev
i
ce s
i
m
i
la
r based
on II
I-
N material
[
28],
[
29].
The
t
o
tal pa
ras
itic
re
s
i
s
ta
nc
e i
s
genera
lly d
o
m
inate
d
by a
l
o
w
Ohm
i
c co
n
t
act res
ista
nce
[3
0] whic
h
i
s
a
l
a
rg
e
amoun
t
a
d
v
a
n
t
a
g
eou
s
a
n
d
c
oul
d
b
e
a
t
t
r
i
but
e
d
t
o
t
h
e
in
cr
ea
se
d
ca
rrier
c
o
n
c
e
n
t
r
a
tio
n
or
/
a
n
d
a
n
incre
a
se
d
car
rier mobi
l
ity
[
31
].
3.2.
Br
ea
k
d
o
w
n
vol
t
a
ge
The
impa
c
t
i
o
n
iza
t
io
n-ge
ne
r
a
ti
o
n
m
o
d
e
l
a
pp
l
i
e
s
i
n
or
de
r
to
u
nde
r
s
t
a
n
d
t
h
e
i
r
i
m
p
a
c
t
o
n
o
f
f
-
s
t
a
t
e
brea
k
dow
n
v
o
ltage
s
sho
u
l
d
b
e
t
urne
d-
on
a
t
t
ec
hn
iq
ues
t
o
s
imula
t
e
i
n
t
he
s
oftw
a
r
e
pr
oce
ss,
t
h
i
s
has
use
d
t
h
e
i
m
p
a
c
t
S
el
b
st
at
ement
in
w
h
i
ch
t
h
e
s
ev
e
r
e
i
m
p
a
ct
i
o
n
i
z
a
t
i
o
n
mo
d
el
i
s
act
i
v
a
t
e
d
,
h
e
re
t
he
b
e
a
m
s
t
a
t
emen
t
i
s
use
d
t
o
spe
c
i
fy
a
n
o
p
t
i
ca
l
s
o
u
r
ce
o
f
ca
rrier
p
a
i
r
ge
ner
a
t
i
on
i
n
a
ddi
ti
o
n
t
o
t
h
e
t
h
erma
l
g
e
ne
ra
t
i
o
n
p
r
ovi
ded
b
y
rec
o
mbi
n
at
i
on
S
R
H
(short r
e
a
d
h
o
l
e
s
) G
I
GA a
nd B
l
aze
m
odel.
I
n
T
her
m
a
l
e
f
f
ec
t
mus
t
b
e
ta
ke
n
o
f
t
he
h
ot
e
l
e
c
t
ro
ns,
la
t
t
i
c
e
v
ari
a
ti
on
s
of
t
h
e
e
xt
e
r
i
o
r
te
mp
e
r
at
u
r
e
a
n
d
se
lf
h
ea
ting
of
d
e
v
i
c
e
i
n
to
a
c
c
ount
[
2
3
]
.
It
i
s
b
a
sed
on
t
h
is
w
or
k
o
n
t
h
e
m
ode
l
of
W
ach
u
t
ka
[
32]
a
nd
inc
l
ude
s a
l
l
the
r
ma
l source
s a
n
d
sin
k
s (Jo
u
l
e
he
a
t
, Thom
so
n ter
m,
e
t
c
.).
Succ
ess
f
u
l
t
herm
al mode
l
i
n
g
r
equ
i
res
appr
opr
i
a
t
e
b
o
u
n
d
ar
y co
n
d
i
t
i
ons
t
o
be spe
c
i
fie
d
.
The
off-st
a
te
I
DS
–V
DS
c
hara
c
t
eris
ti
c
s
o
r
br
e
a
kd
ow
n
vo
lta
g
e
o
f
c
o
n
v
e
n
t
i
o
n
a
l
I
nA
lN
/
G
aN
H
E
M
T
s
w
ith
a
w
i
d
e
d
r
ain
bia
s
r
e
g
ion
o
f
t
he
g
a
t
e
v
o
l
t
a
g
e
be
tw
ee
n
–1
V
a
n
d
-
4
V
a
r
e
sh
o
w
n
i
n
F
i
g
ure
3.
T
he
conve
n
tiona
l
HEMTs
dem
o
nstra
t
e
the
off-sta
te
b
rea
kdow
n
volt
a
g
es
o
f
a
18
0
V
a
n
d
87
5
V
.
G
ro
wt
h
o
f
t
h
e
Al
N
l
a
y
e
r
was
p
a
rt
i
c
ul
arl
y
c
ru
ci
al
i
n
d
i
cat
e
d
i
n
t
h
a
t
t
h
e
b
rea
k
d
ow
n
c
h
ara
c
teris
tic
o
f
the
H
E
MT
d
e
v
ice
w
i
t
h
th
i
s
l
a
y
er
h
as
b
e
e
n
si
g
n
i
f
ica
n
t
l
y
i
m
p
rove
d
i
n
t
hi
s
de
v
i
c
e
a
s
w
e
ll
a
s
the
i
r
re
si
sti
v
ity
[
3
3
].
I
t
is
b
e
lie
v
e
d
t
h
a
t
enha
nc
em
en
t
of
t
he
o
ff-sta
t
e
b
rea
k
d
o
w
n
v
o
l
tage
o
f
t
h
e
H
E
MT
d
e
v
i
c
e
i
s
at
tri
b
u
t
e
d
t
o
a
be
t
t
er
c
arr
i
er
con
f
inem
en
t a
n
d
t
h
e
i
n
cre
a
sed
back-
b
arrie
r
he
i
g
h
t
o
f
the
Al
N
b
u
ffer l
a
yer
use
d
s
up
pre
s
s
e
s t
h
e sp
il
love
r
of
t
he
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SSN: 2088-
8694
I
nt
J
P
ow
Elec
& Dr
i
S
y
st, Vol. 10,
N
o.
1, Mar
c
h 2
0
1
9
:
39
8 –
40
5
40
2
2D
EG
i
n
t
o
t
h
e
b
u
ffe
r
l
a
y
er
a
nd
p
os
t
p
o
n
es
t
he
punc
h
thro
ug
h
o
f
t
he
b
u
f
fe
r
la
yer,
t
hus
c
a
n
b
e
part
ic
ular
ly
prom
ine
n
t
a
s
a
f
u
n
c
t
i
o
n
o
f
t
he
s
ub-t
h
resh
o
l
d
drai
n
lea
k
a
g
e
curr
en
t
a
n
d
incre
a
s
i
ng
t
he
b
r
eak
dow
n
v
o
l
t
a
g
e
rea
lly
v
ery
remar
k
ab
le.
F
i
g
u
r
e
3
. Th
e
DC Ou
t
put
ch
a
ract
eri
s
ti
cs of
t
h
e I
n
A
l
N/
GaN HEMT
w
it
h
a
g
a
te le
n
g
t
h
of 15
nm
a
nd V
GS
ste
ppe
d fr
om
-
1.0
V
to −4.0
V
in
steps
o
f −
0
.5
V
for bre
akdow
n
vo
l
t
a
g
e
A
t
a
c
e
r
tai
n
d
ra
i
n
c
urre
nt
l
e
v
el
v
a
l
ue
w
ith
i
ncr
eas
i
ng
a
chan
ne
l
p
i
n
c
h
-
o
f
f
eff
ect
,
an
d
t
h
e
pun
ch
t
h
ro
ugh
o
f
th
e
el
e
c
t
r
on
s
in
to
t
h
e
b
uf
fe
r
l
a
y
e
r
ca
u
s
e
s
a
r
api
d
i
nc
rea
s
e
of
t
he
d
ra
in
l
ea
ka
ge
c
urre
nt
t
he
p
u
n
c
h
thr
o
u
g
h
o
f
t
h
e H
E
MT
d
e
v
i
c
e brea
kdow
n
be
o
cc
urs
[
34],
[3
5]
a
nd
i
s kn
ow
n
a
s
t
he
b
u
ffe
r-la
y
er
p
unc
h
thr
o
u
g
h
e
f
f
e
c
t
[
3
6
]
,
s
u
c
h
a
s
2
0
0
m
A
/
m
m
i
n
V
GS
=-4
V
for
exa
m
pl
e.
A
s
m
e
nti
o
n
e
d
ab
o
v
e,
t
he
e
l
e
ctr
ons
s
p
ill
i
ng
o
ver
f
r
o
m
t
h
e
c
h
a
nne
l
to
t
h
e
b
uf
f
e
r
l
a
y
e
r
a
t
a
h
i
gher
d
r
a
i
n
s
uppl
y
v
o
l
t
a
g
e
can
f
ro
m
t
h
e
b
u
f
f
e
r
l
e
a
k
ag
e
cu
rre
n
t
.
T
h
e
drai
n
cur
r
en
t
c
h
a
n
ge
i
n
I
DS
f
o
r
t
he
r
em
arka
b
l
e
k
i
nk
is
m
a
x
im
um
n
ear
t
he
p
i
n
c
h
o
f
f
o
f
t
he
d
e
v
i
c
e
a
nd
re
duce
s
w
ith
t
he de
c
l
i
n
e
in
the gate
vol
ta
ge.
3.3.
Kin
effect
F
i
gure
4
s
h
ow
s
t
h
e
ou
t
p
ut
c
h
a
rac
t
e
r
istic
s of a
3
F
P
-H
EMT
w
ith
K
i
nk
e
f
fe
c
t
f
or
t
em
per
a
t
u
re
a
m
b
ien
t
.
The
de
v
i
ce
s
h
o
ws
s
ign
i
fica
n
t
c
ha
n
g
es
i
n
t
h
e
cur
r
en
t
de
n
s
ity
w
i
t
h
a
r
i
s
e
a
f
t
e
r
s
t
r
e
s
s
w
i
t
h
a
b
r
u
p
t
g
r
o
w
t
h
i
n
curr
ent
at
d
ifferent
V
GS
vol
t
a
ge
b
ias.
I
n
pa
rti
c
ul
a
r
,
it
e
x
h
i
b
i
t
s
tra
p
pin
g
/
de
tra
p
p
i
n
g
t
i
m
e
constra
i
n
t
s
be
ing
rese
arc
h
ed vi
g
oro
u
sl
y i
n
d
i
ca
t
i
n
g
t
he
e
xi
ste
n
c
e
o
f the
tra
p
s in
de
v
i
ce
[3
7].
F
i
gure
4.
O
utp
u
t
cha
r
ac
t
e
risti
c
s
w
i
t
h
k
ink
effect
Evaluation Warning : The document was created with Spire.PDF for Python.
Int J
P
o
w
El
e
c
&
D
ri S
yst
I
S
S
N
:
2088-
86
94
A m
odel
i
ng a
n
d
pe
r
f
orm
anc
e
of
the
tr
iple
f
i
e
l
d
p
l
ate
H
E
MT
(
K
our
d
i
Z
a
k
a
r
y
a)
40
3
Res
u
l
t
i
n
g
i
n
a
n
a
ccum
u
la
ti
on
o
f
h
ole
s
a
m
e
nd
i
ng
s
u
rfa
ce
po
t
e
ntia
ls
o
r
c
h
a
n
ne
l
/
s
u
b
s
tr
ate
in
ter
f
ac
e
in
dic
a
t
e
s
the
crit
ica
l
d
ra
in
v
o
l
t
a
ge
(
V
ki
nk
),
t
hi
s
r
e
gi
on
of
t
he
K
in
k
effe
c
t
i
s
hig
h
e
s
t
i
n
t
he
o
u
t
pu
t
c
o
n
d
uc
t
a
n
c
e
.
The
s
t
u
d
y
o
f
the
r
e
l
i
ab
i
l
i
t
y
o
f
t
h
e
Ki
nk
e
ffe
ct,
e
s
pe
c
i
al
l
y
w
i
t
h
t
h
e
gate
b
ias
V
k
in
k
i
n
c
r
ea
ses
regu
lar
i
n
I
I
I-
V
ma
terials,
d
ev
i
ces
a
re
f
iel
d
-a
ssi
s
t
e
d
i
n
na
t
u
re
a
nd
i
t
is
s
u
gge
st
e
d
t
hat
t
h
is
k
i
n
k
c
oul
d
be
i
nd
uce
d
b
y
ho
t
elec
tr
on tra
p
p
i
ng a
n
d fie
l
d-a
s
si
s
t
ed
d
e-
tra
ppi
ng
via
d
o
n
o
r-li
k
e
t
r
a
ps i
n th
e
bu
ffe
r la
yer
[3
8].
3.4.
A
C r
e
su
lts
I
n
t
hi
s
s
i
m
u
la
t
i
on,
t
he
m
axim
um
g
a
i
n
sh
ow
n
for
t
h
e
c
u
rrent
H
2
1
are
b
e
twee
n
67
d
B
for
F
P
-
H
EM
T
and
for
o
t
he
rs
i
s
63
d
B
a
t
1
G
H
z
,
the
m
a
xi
m
u
m
stable
p
o
w
er
g
ain
i
s
3
8
d
B
f
o
r
t
h
e
f
i
r
s
t
a
n
d
f
o
r
o
t
h
e
r
s
i
s
37 d
B
a
t
1 G
H
z
. A
re
s
how
n i
n
F
i
gur
e 5.
F
i
gure
5.
The simulated curr
ent g
a
in
(
H
21
) a
n
d
maximum
gain
p
ower sta
bility (GMS)
v
e
r
sus
freque
nc
y
for
th
e
L
G
=
15 nm InA
lN/GaN
H
E
MTs
.
The
b
ias co
nditio
ns w
er
e V
DS
=
2
V
a
nd V
GS
=0
V
The
s
e
resu
lt
v
a
lue
s
w
ere
extrac
t
e
d
from
t
he
e
xtr
i
nsic
S
-par
am
et
ers
a
nd
w
e
re
t
hen
u
s
ed
t
o
veri
fy
t
he
in
t
r
ins
i
c
va
lue
s
o
f
t
h
i
s
d
e
v
ic
e
b
y
s
imula
tio
n.
A
n
i
m
p
o
r
tan
t
a
dv
a
n
t
a
ge
i
s
op
ti
mi
z
e
d
i
n
t
h
e
d
evi
c
e
;
t
he
elec
tr
on
i
c
t
ra
n
s
fe
r
in
t
he
c
ha
nne
l
d
u
e
t
o
t
he
e
ffec
t
of
t
he
c
ap
a
c
i
t
a
n
ce
s
r
e
qu
ires
t
he
h
ig
h
val
u
es
o
f
t
h
e
gate
t
o
source
c
a
p
ac
it
anc
e
(
C
GS
)
,
w
h
i
c
h
r
esu
l
t
fr
om
t
he
e
xte
n
de
d
effec
t
i
v
e
g
a
t
e
l
en
g
t
h
[
3
9
]
.
W
e
de
term
in
ed
t
h
e
cut
o
ff
fre
q
ue
n
c
y
of
t
he
f
irst
d
e
v
i
c
e
is
2
9
0
G
H
z
a
nd
30
5
G
H
z
f
or
a
not
her.
T
he
v
al
ue
o
f
t
h
e
m
a
x
i
m
u
m
fre
que
nc
y
is
a
p
p
ro
xim
a
te
l
y
1.
2
TH
z
w
ith a
s
l
o
pe
0 d
B
/
D
e
c
[4
0].
The
d
e
c
l
i
n
e
i
n
t
he
freq
u
e
n
c
y
v
a
l
ue
o
f
t
h
e
de
vice
s
is
f
un
da
me
nt
a
ll
y
a
s
so
ci
at
e
d
w
i
t
h
t
h
e
l
e
n
g
t
h
o
f
th
e
gate,
as
w
e
l
l
a
s
t
he
d
e
s
ign
of
t
he
d
e
v
i
ce,
a
nd
t
h
ere
f
ore
the
pr
ese
n
ce
of
t
h
e
f
iel
d
p
la
te
h
a
s
c
ontri
bu
te
d
t
o
t
hi
s
reduc
tio
n
i
n
v
a
l
ue
o
f
the
c
u
t
o
ff
fr
eq
ue
nc
y.
F
o
r
c
om
paris
on,
t
he
h
i
ghe
st
c
u
t
t
i
ng
freque
nc
y
repor
t
e
d
i
n
n
i
t
r
ide
trans
i
s
t
or
s
t
o
d
ate
w
a
s
670 G
H
z
[41]
a
nd
1 TH
z
[42].
4.
CONCL
U
S
ION
We
h
a
v
e
pre
s
e
n
t
e
d
t
h
e
p
o
w
e
r
perform
anc
e
of
a
15
nm
g
a
t
e
le
n
g
t
h
InAl
N/
GaN
HEMTs
on
S
i
C
sub
s
tra
t
es
u
s
i
ng
the
per
i
p
h
e
r
y
o
x
i
d
e
o
f
t
he
g
ate
for
struc
t
ur
es
w
i
t
h
a
n
d
w
i
t
h
o
u
t
a
f
i
e
l
d
p
l
a
t
e
.
T
h
e
s
e
d
e
v
i
c
e
s
e
x
hib
i
t
e
d
c
u
rre
n
t
d
e
ns
ity
a
s
hi
gh
a
s
2
.
05
A
/mm,
a
p
e
a
k
e
xt
rin
s
i
c
tra
n
sc
o
nduc
tance
of
840
mS
/mm
for
3F
P
a
n
d
5
6
0
m
S
/
m
m
f
o
r
S
F
P
a
t
V
DS
=
5
.
0
V
,
a
n
d
a
c
u
t
o
f
f
i
n
t
h
e
f
i
r
s
t
d
e
v
i
c
e
i
s
2
9
0
G
H
z
a
n
d
3
0
5
G
H
z
f
o
r
o
t
h
e
r
.
The
m
a
xim
u
m
fr
eque
nc
y
w
a
s
1.2
TH
z,
m
aximum
b
rea
k
d
o
w
n
v
o
lta
ge
o
f
a
1
8
0
a
n
d
8
7
5
V
.
T
h
e
s
e
r
e
s
u
l
t
s
dem
o
n
s
t
r
ate
th
e
poss
i
b
i
lit
y
of usi
ng t
h
is
t
ech
no
l
o
g
y
i
n di
ffe
r
e
n
t
a
pp
li
cat
ion
wi
th
t
hi
s opt
imi
z
e
d
s
t
r
u
c
tu
re
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SSN: 2088-
8694
I
nt
J
P
ow
Elec
& Dr
i
S
y
st, Vol. 10,
N
o.
1, Mar
c
h 2
0
1
9
:
39
8 –
40
5
40
4
ACKNOW
LEDG
E
MEN
T
S
The
a
u
th
ors ac
kn
ow
le
d
g
e
the
A
g
enc
y
s
pace
a
l
g
e
r
ian are
s
u
pp
orte
d
th
i
s w
o
rk
by t
h
ro
ug
h
the
Sa
t
e
l
lite
deve
l
opm
en
t c
e
nter
Acro
ny
ms
ITE
R
I
te
ra
t
i
on st
e
p
s
dt
D
e
not
e
diff
e
r
e
n
ti
a
l
i
nte
r
va
l
of qua
ntit
y
dir
T
h
e
dire
c
tion
pri
m
a
r
y
inj
e
c
tion
direc
t
ion
for
the
c
onta
c
t
BOU
NDP
D
e
fin
e
s
th
e
l
e
ngth units
f
o
r
a
ll
posit
iona
l
bound
pa
ra
m
e
t
e
rs
TS
TE
P
,
X
S
T
EP
D
e
not
e
int
e
g
e
r m
u
ltipl
e
s of th
e
c
or
respondi
ng
diffe
re
ntia
l
inte
rv
als
A
G
D
E
VIC
E
A
lgorithm
g
e
n
e
ti
c
de
vi
c
e
Q
R
E
G
IO
N
Q
u
a
n
tu
m
re
gi
on
d
e
finition
SC
HRR
E
G
I
O
N
S
c
h
rö
di
nge
r
r
e
gion
de
finiti
o
n
REFE
RENCES
[1]
W.
W
.
J
.
X
.
D.
C
.
Z.
J
.
S.
,
and
S.
R
.
L
.
S
hu
np
u
,
“
Elect
r
i
cal
/o
p
ti
ca
l
du
al-f
uncti
on
r
ed
ox
p
o
t
ent
i
al
t
ransist
o
r",
El
ectro
n
i
c
P
r
ope
rt
ies An
d
M
a
t
e
rials
,
”
Scienti
fic R
e
port
s
,
vo
l
.
3
,
n
º
339
1,
2
0
13.
[2]
J
.
R
.
W
.
C
.
,
a
n
d
C
.
P
.
S
.
T
u
c
k
e
r
,
“
S
i
l
i
c
o
n
f
i
e
l
d
-
e
f
f
e
c
t
t
r
a
n
s
i
s
tor
based
on
q
ua
nt
um
t
unne
lling,”
Ap
pl
.
Ph
y
s
.
Le
t
t
,
v
o
l. 6
5,
pp
.
61
8
-
6
20
, 19
9
4
.
[3]
W. Sh
o
ck
ley,
“A u
n
ipo
l
ar field-
e
f
f
ect
t
ran
s
is
t
o
r
,
” Pro
c
.
IR
E 1
952,
IEEE
,
v
o
l.
40,
n
º
11
,
p
.
1
3
65,
2007
.
[4]
D.
e
.
a.
N
il
ss
on,
“
Bi-stabl
e
and
dy
nam
i
c
c
u
rrent
m
od
ulatio
n
i
n
el
ectroch
em
ical
o
rgan
ic
t
rans
isto
rs
,”
Ad
v
.
Ma
te
r
,
v
o
l. 1
4,
nº
51
, 2
00
2.
[5]
S
.
B
.
D
.
W
.
K
.
S
.
B
.
H
.
D
.
Z
.
a
.
C
.
M
.
K
.
S
.
B
o
u
t
r
o
s
,
“
N
o
r
m
a
l
l
y
-o
ff
5
A/11
00
V
Ga
N-on
-silic
o
n
d
e
vic
e
f
o
r
h
ig
h
vo
lt
age ap
plication
s
,”
in I
E
DM
Tech.
Di
g
,
n
º
7
51
-
7
5
3
, 2
00
9.
[6]
e. a.
K
. Kob
ayas
hi
, “New
s
l
a
nt o
n
fiel
d
plat
es f
o
r
gal
li
u
m
nit
r
id
e HEM
T
s
,
”
Ap
p
l
.
Ph
ys.
Ex
pres
s,
v
o
l
. 7
, 2
01
4
.
[7]
T.
N
.
Y. K. Y
.
S.
K.
T
.
I.
O
.
a. M.
Y.
W
.
Sait
o
,
“On-res
i
stanc
e
m
odulation
of
h
i
g
h
volt
age
GaN HEM
T
o
n
sapphire
sub
s
tra
t
e
u
n
d
e
r
high
a
pp
l
i
e
d
v
o
l
t
a
ge
,”
IEE
E
E
l
ect
ro
n
D
evice L
e
tt
,
vo
l. 28
, nº 8
,
p
. 6
7
6
–
6
7
8
, 2
00
7.
[8]
M
.
J
.
-
M
.
M
.
L
.
M
.
a
.
S
.
H
.
Y
.
W
u
,
“
A
9
7
.
8
%
e
f
f
i
c
i
e
n
t
G
a
N
H
E
M
T
b
o
o
st
c
o
n
v
e
rter
w
it
h
30
0-W
ou
tp
ut
p
ower
a
t
1
MHz
,
,
”
IEE
E
Elect
ron
Devi
ce Lett
.
, vo
l
. 29
, nº 8
,
p
.
8
2
4
–
8
2
6
,
20
0
8
.
[9]
A.
S
.
M
.
M
.
R
.
P
.
S.
S
.
S.
P
.
M.
C
.
T.
W
.
U.
K
.
M.
a
.
P.
P
.
Y.
W
u
,
“
3
0
W
/
m
m
G
a
N
H
E
M
T
s
b
y
f
i
e
l
d
p
l
a
t
e
optimizat
ion,,”
IE
EE
El
ectr
on
D
evice
Let
t
, v
ol
.
2
5
,
n
º
3,
p.
1
17
–1
19
, 20
0
4
.
[1
0]
T.
D
.
T.
P
.
H.
P
huong,
“Genet
ic
A
l
g
or
ithm
f
o
r
Optimi
z
ation
o
f
H
E
M
T
Mo
de
l
Paras
i
t
i
c
Param
e
ters,
”
I
nt
ernati
onal
Con
f
erence o
n
Electro
ni
c Co
m
p
u
t
e
r
T
echn
o
l
o
g
y
, p
. 6
00
–
6
03
, 2
0
0
9.
[1
1]
D
.
R
.
S
.
S
.
S
.
K
.
R
.
L
.
R
.
K
.
C
.
S
.
V
.
a
.
R
.
K
.
S
.
A
m
i
t
,
“
D
e
s
i
g
n
and
Fabricat
ion
of
M
ulti-
f
i
nge
r
F
ie
ld
P
lat
e
f
or
En
han
cemen
t
o
f
A
l
G
aN/GaN
H
E
M
T
Break
dow
n
V
o
ltag
e
,
”
Def
e
nce S
c
i
e
nce
Jo
ur
nal
,
vo
l.
6
8,
n
º
3,
pp
.
2
90
-294
,
2
0
1
8
.
[1
2]
K.
V
.
a.
R
.
M
.
M
.
A
r
un
devi,
“Re
a
l
Co
ded
Gen
e
ti
c
Al
go
rit
h
m
Bas
e
d
I
m
p
rov
e
men
t
o
f
Eff
i
ci
e
n
cy
i
n
In
terleav
e
d
Boost
Conver
ter,
”
Inter
n
a
t
i
onal Jo
ur
na
l o
f
Power Elect
ro
nic
s
an
d D
r
i
ve S
y
s
t
ems
(
I
JPE
D
S)
,
v
o
l
.
5
,
nº
4
,
p.
5
2
9
,
201
8.
[1
3]
R
.
E
.
T
.
N
.
A
.
E
.
-
B
.
S
.
K
.
E
.
-
L
.
&
.
W
.
M
.
M
.
M
.
E
.
Y
a
h
i
a
,
“
R
o
g
u
e
w
a
ves
lead
t
o
the
in
s
t
ab
ilit
y
i
n
G
a
N
sem
i
con
duct
o
rs,”
Scient
i
fic R
e
port
s
, vo
l
. 3
, n
º 12
24
5, 2
01
5.
[1
4]
G.
B
.
S.
K
.
S.
S
.
S
h
ee,
“
Q
u
an
tum
A
n
al
y
tical
M
odel
i
n
g
f
o
r
D
ev
ice
P
aram
eter
s
and
I
–
V
Charact
e
r
i
s
t
i
cs
o
f
Nan
o
s
cale
Dual
-M
aterial
D
o
u
b
le-Gate
S
i
l
i
co
n-o
n
-No
t
hin
g
M
OSF
E
T
,
”
IEEE
Tran
sact
io
n
s
o
n
El
e
c
t
r
o
n
Devi
ce
s
,
vo
l.
6
1
,
n
º
8
,
p
. 2
69
7
–
27
04
,
2
0
14
.
[1
5]
K.
T
.
S
. K
. K.
F
.
M
a
n,
“Gen
e
t
i
c
a
l
g
or
it
h
m
s:
co
n
cep
t
s
a
nd
app
l
i
c
a
tio
n
s
[in
engin
eerin
g d
e
si
gn,
”
Tran
s. On Industrial
El
ectr
onics
,
vol.
43
,
pp.
5
19
-5
34,
1
99
6.
[1
6]
C. F
. G.
E
.
P
rog
r
amming
, “Ma
t
h
ematical
M
od
e
l
in
g
by
an Ar
ti
f
i
c
i
a
l
In
t
e
lli
g
ent,
”
ISBN
9
7
2
-9
58
90
-5-4,
20
02
.
[1
7]
T.
A
.
D.
L
.
I.
P
.
R.
F
.
C.
P
.
G.
a
.
G.
M
.
G.
V
.
R
e
sta,
“
Scal
i
n
g
t
rends
a
n
d
p
erf
o
rm
an
ce
ev
a
l
uat
i
o
n
o
f
2
-
dim
e
nsi
o
n
a
l
polarity-cont
roll
able FETs
,
”
S
c
ie
n
t
i
f
ic
R
e
po
r
t
s
,
p
.
P
M
C
53
720
79,
2
01
7.
[1
8]
S.
M
.
E
.
-G
.
Y.
A
.
Hussei
n
,
“
Mo
delling
and
optimizati
o
n
o
f
m
icro
w
a
v
e
d
e
v
i
c
e
s
a
n
d
c
i
r
c
u
i
t
u
s
i
n
g
g
e
n
e
t
i
c
alg
o
rith
m,”
IEEE
T
r
an
sac
t
io
n
on
Micr
owa
ve T
h
eo
ry a
nd
T
e
ch
niqu
es
, vo
l
.
52
,
p
p
. 3
29
-33
6
, 2
00
4.
[1
9]
M
.
I
.
o
.
T
.
(
.
a
.
I
Q
E
,
“
R
F
L
L
C
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v
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d
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e
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l
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a
N
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o
im
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e
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ncy
perf
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nce
o
f
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m
alumin
um
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itri
de
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AlN
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h
i
g
h
-
e
lectro
n-m
o
b
i
lit
y
t
r
ansist
ors
(HEMT
s
),
”
[D
ong
S
e
tu
p L
ee et
a
l,
IE
EE
El
ectr
on
D
evice
Let
t
er
s
,
2
0
11
.
[2
0]
F
.
L
a
b
or
a
t
o
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s
,
F
u
j
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su
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e
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o
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s
W
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l
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s
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i
r
s
t
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a
ll
iu
m-
N
i
t
r
id
e
H
EMT
f
o
r
P
o
wer S
u
ppl
y
,
J
ap
an: Kaw
a
s
a
ki
,
2
009.
[2
1]
P.
P
.
R.
M
.
M
.
R
.
K.
Y
a
d
a
v
,
“TC
A
D
Si
mu
l
a
t
i
o
n
s
a
n
d
Sma
l
l
Sign
a
l
Modeli
n
g
o
f
DMG
AlG
a
N
/
G
a
N
H
F
E
T
,”
Int
e
rn
ation
a
l
Jo
u
r
n
a
l of El
ectrica
l a
nd Comp
u
t
er E
ngin
eerin
g (IJ
E
C
E)
,
vo
l
.
7
,
n
º
4
,
p
p.
1
8
3
9
-
1849,
2
0
17.
[2
2]
J.
X
.
,.
N.
U
.
G.
K
ro
k
i
di
s,
“
A
fully
2
-d
imen
sio
n
al,
q
u
an
t
u
m
m
e
c
h
a
ni
cal
cal
cul
a
tio
n
o
f
s
h
o
rt-c
h
a
nn
el
a
nd
drai
n
in
du
ced b
arrier loweri
n
g
e
f
f
ects
in
HEM
Ts
,”
Solid-S
tat
e
Electr
onics
,
vol.
5
2
,
p
.
625–
63
1,
2
00
8.
Evaluation Warning : The document was created with Spire.PDF for Python.
Int J
P
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S
.
v
.
co
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io
n,
“
G
a
N
H
E
MT
B
re
ak
do
wn
,”
T
cad
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ilav
aco,
201
4.
[
On
line
].
A
va
ila
b
le
:
ht
tps://
ww
w
.
s
i
lvaco.
c
o
m
/ex
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mp
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cad/s
ecti
o
n
2
0/
exam
p
l
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de
x
.
html.
[2
4]
J.
X
.
N.
U
.
Krok
i
d
is
,
“
A
f
ull
y
2
-
d
im
ensional,
qu
antum
m
e
c
hani
c
al
calcul
a
ti
on
of
s
h
o
rt
-chann
el
a
nd
d
rain
i
n
d
u
ced
barri
er lo
w
eri
n
g
ef
fects in HEMTs,”
Solid
-S
t
a
t
e
El
ectro
n
i
cs
,
vo
l.
52,
p
.
625
–6
31
,
2008
.
[2
5]
P
.
P
ap
a
d
op
ou
louy,
2
0
13.
[
On
line]
.
A
v
a
il
abl
e
:
htt
p
://h
eph
aestu
s.
teik
av.ed
u
.g
r/i
ndex.p
h
p
/
ct-m
en
u-i
t
e
m
-7/
e
lectri
cal-
e
n
gine
e
r
in
g/22
6
-
d
e
vic
e
-
simu
la
ti
on
s.
[2
6]
S
.
H
.
Q
.
J
.
S
.
Z
.
T
a
n
g
e
C
.
L
.
a
.
K
.
J
.
C
.
L
i
u
,
“
6
0
0
V
H
i
g
h
-
P
e
r
f
o
r
m
ance
Al
GaN
/
GaN
HEMTs
wi
th
A
lN
/
S
iN
x
Pass
iva
t
i
o
n
,
” Ne
w
Or
l
eans,
Lou
isi
a
na, U
S
A
.
: CS
MA
NTECH Conferen
ce,
M
ay
13th
-
16th,
(
20
13
).
[2
7]
S.
Y
.
W
.
C
.
B
.
Z
.
Z
.
F
.
S
.
C
.
K.
J
.
C.
Q
.
Zho
u
,
“
H
i
g
h
vo
lt
ag
e
I
nAlN/Ga
N
H
EM
T
s
w
ith
nonalloyed
Source/Drai
n
f
o
r
R
F
power
a
pp
li
cati
ons,
”
S
o
lid
-
Sta
t
e Elect
ro
n
i
cs
, vo
l
.
91
,
pp
. 1
9-2
3
, 2
01
4.
[2
8]
J.
C
.
Z
.
Y
.
W.
H
.
H.
Z
.
J
.
F
.
Z
.
a
.
Y.
H
.
J
.
S
.
Xue,
“
Fabr
icati
on
a
nd
chara
c
t
e
ri
zati
o
n
o
f
I
n
A
lN/G
aN
-b
ased
d
o
u
b
l
e-
channel
hi
gh ele
ct
ron
mob
ility tr
a
nsi
s
t
o
rs f
or
el
e
c
t
ronic app
l
i
cati
o
n
s
,”
J. Ap
p
l
. P
h
y
s
,
vol.
11
1
,
n
º
1145
13,
2
0
1
2
.
[2
9]
C
.
C
.
J
.
Z
.
e
.
a
.
B
.
T
i
a
n
,
“
S
t
r
u
ctu
r
e
and
elect
rica
l characteri
s
t
i
c
s
o
f
A
l
G
a
N
/
G
a
N
M
I
S
H
F
E
T
wi
t
h
A
l
2
O
3
t
h
i
n
f
i
l
m
a
s
bo
th
su
r
f
ace passi
vati
on
and gat
e
di
e
lect
ric,”
Se
m
i
c
o
nd
Sc
i
Te
c
h
n
o
l
,
n
º
0
8
502
3,
p
.
26,
2
0
11.
[3
0]
K.
K
.
K
.
&
.
M.
A
.
Y.
A
wano
,
“
S
h
o
rt
-chan
n
el
e
f
f
ects
in
s
ub
quart
er-m
i
c
rom
e
ter-g
ate
HEM
T
's:
Sim
u
lati
on
a
n
d
experim
e
nt
,”
IEEE Tra
n
sa
cti
o
n
s
o
n
E
l
ect
ron D
e
v
i
ces
, v
ol
.
3
6
, n
º
10
,
p
p
.
2
2
6
0
-
2
2
6
6
, 19
8
9
.
[3
1]
N.
D
u
b
u
c
,
“E
lec
t
ro
t
herm
al
m
odeli
ng
S
iC
M
ES
FET
t
r
ans
i
s
t
ors
an
d
op
tim
i
zati
on
of
a
n
archit
ectu
r
e
f
o
r
th
e
D
ohert
y
po
wer am
p
l
ifier w
i
t
h
hig
h e
f
f
i
c
i
enc,”
F
r
an
ce: P
h
.
D.
Th
e
s
i
s U
n
iv
e
r
sity o
f
L
i
m
og
e
s
, 2
00
3.
[3
2]
D.
V
.
M
.
C
.
V.
M
.
R
.
G
.
B.
F
.
I.
A
.
S
.
L
.
Z
.
M
.
Va
l
d
i
n
oc
i,
I
mpa
ct-io
n
i
zati
o
n
in
s
il
ico
n
a
t
larg
e
op
erat
in
g
tem
p
erature,
Kyot
o,
J
apan
: S
I
SPA
D
'
99,
1
9
99.
[3
3]
M.
W
.
a
.
K
.
J
.
C
h
e
n,
“
K
i
n
k
Ef
f
e
c
t
i
n
Al
Ga
N
/
G
a
N
HE
M
T
s
I
n
d
u
c
e
d
b
y
D
r
a
i
n
a
n
d
G
a
t
e
P
u
m
p
i
n
g
,
”
I
E
EE
El
ect
ro
n
Devi
ce L
e
tt
ers
, v
ol. 3
2,
n
º 4,
p.
4
8
3
, 2
01
1.
[3
4]
Y
.
C
.
H
.
J
.
K
.
M
.
L
.
C
.
L
i
u
,
“
O
p
t
i
m
i
z
a
t
i
o
n
o
f
a
C
o
m
m
o
n
B
u
f
f
e
r
P
latf
or
m
f
o
r
Monoli
thic
I
nt
egrat
i
on
o
f
InG
a
N/
GaN
Li
g
h
t
-
Emi
t
ting
Diodes
an
d
Al
GaN/GaN
Hi
gh-
E
l
e
ctron-Mob
ility
T
r
a
nsi
s
t
o
rs,
”
Jou
r
n
a
l
of
Electr
o
n
i
c
Ma
te
ria
l
s
,
vol.
4
5
,
n
º
5
,
p
.
2
092
–
2
10
1,
201
6.
[3
5]
H.
O
.
B.
F
.
e.
a
.
Bah
a
t-T
r
ei
del
E
,
“
Pu
nch
t
h
roug
h-vo
lt
age
enhan
cem
ent
o
f
A
lGaN
/GaN
H
EM
T
s
u
sing
A
lGa
N
do
ub
le
h
etero
j
uncti
on
c
onfin
e
m
en
t,
”
IEEE T
r
a
n
s
El
ectr
on Devices
, vo
l
. 1
2
, p
. 55
, 2
0
0
8
.
[3
6]
B.
B
.
A
.
G
.
M.
K
.
Z
.
K
ourd
i
,
“Si
d
e
Ef
f
ects
in
I
n
A
l
N
/
G
aN
H
ig
h
El
ectron
Mobili
t
y
T
rans
i
s
t
o
rs,”
Mi
cro
e
lectr
onic
Engi
neering
, vo
l
. 14
2
, p
p.
52
-
5
7
,
20
15
.
[3
7]
E.
G
.
J
.
L
.
a.
M
.
H.
S
.
N
u
tti
n
c
k
,
“
F
l
o
a
ti
ng
-body
ef
f
ect
i
n
Al
-G
aN
/
G
aN
H
EM
T
po
wer,”
Pro
ceedi
n
g
of
G
aA
s
S
y
m
p
osium,
p
p
. 3
3-36
,
2
00
2.
[3
8]
S
.
C
.
T.
P
.
M.
J
.
Yan
g
,
Det
e
rm
i
n
at
io
n
of
t
rap
en
ergy
l
ev
els
in
A
l
Ga
N/Ga
N
H
E
M
T
,
No
tr
e
D
a
me
U
SA
:
7
1
s
t
A
nn
u
a
l
1
5
4
8
-3
77
0, 2
01
3.
[3
9]
E
.
H
.
M
.
C
.
a
.
T
.
P
.
W
.
C
h
u
n
g
,
“
A
l
G
a
N/
G
a
N
H
E
M
T
W
i
t
h
3
0
0
-
GH
z
f
m
a
x,
”
IEEE Electr
o
n
Devi
ce L
e
tt
ers
,
v
o
l.
31,
p.
1
9
7
,
201
0.
[4
0]
I
.
I
.
Z
.
Y
.
J
.
S
.
S
.
G
h
a
n
d
i
,
“
0
.
5
G
H
z
-
1
.
5
G
H
z
B
a
n
d
w
i
d
t
h
1
0
W
G
a
N
H
EMT
RF
P
ower
A
mpl
i
fi
er
D
es
ign,”
Int
e
rn
ation
a
l
Jo
u
r
n
a
l of El
ectrica
l a
nd Comp
u
t
er E
ngin
eerin
g (IJ
E
C
E),
v
o
l
.
8,
nº
3
, 20
1
8
.
[4
1]
M.
X
.
W.
Y
.
L.
P
.-H
.
L
.
L.-
S
.
Z.
J
.
L.
K
.
R
.
V
.
D.
M
.
X.
W
.
Y.
L
.
P
.
-
H
.
L
.
L
.
-
S
.
J
.
Z
.
K
.
L
.
V
.
R
.
W
.
D
.
R
.
L
.
S
.
S
a
rko
z
y,
“
S
u
b
-
50
nm
i
ndiu
m
pho
sph
i
d
e
h
ig
h
electro
n
m
o
b
i
lity
t
r
an
sistor
t
echnology
f
o
r
ter
a
hertz
monolithic
m
i
cro
w
ave
integ
r
ated
c
ircu
its
a
n
d
s
ys
te
m
s
,”
I
n
t
e
r
n
a
t
ion
a
l
C
o
n
f
e
r
e
n
c
e
In
dium
Ph
osph
id
e
an
d Re
la
te
d
Ma
te
ria
l
s
(I
P
R
M
)
,
pp
.
1-2
,
2
013
.
[4
2]
T.
l
ee,
“
T
e
rah
e
rtz
electro
ni
cs
:
O
p
po
rtu
n
ities
,
c
h
a
ll
eng
e
s
an
d
t
echn
o
l
o
g
i
es,”
In
ternat
io
nal
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