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Hash
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Dep
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Un
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a
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ee
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p
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m
ater
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,
s
u
ch
as
s
em
ico
n
d
u
ctin
g
,
in
s
u
latin
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,
a
n
d
m
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n
an
o
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o
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d
if
f
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en
t
a
p
p
licatio
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s
o
f
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tr
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ic
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ev
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T
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p
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ar
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im
p
o
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ta
n
t
f
o
r
n
an
o
elec
tr
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n
ics
d
ev
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ap
p
licatio
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s
.
I
n
r
esear
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o
f
n
a
n
o
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tr
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ic
f
ield
s
,
ac
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in
n
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o
d
im
en
s
io
n
f
ab
r
icate
d
with
s
em
ico
n
d
u
ctin
g
n
an
o
wir
es
[
1
]
,
th
e
n
an
o
-
ca
p
ac
ito
r
s
f
ab
r
icate
d
u
s
in
g
an
in
s
u
latin
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n
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an
d
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e
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o
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tacts a
m
o
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g
n
an
o
d
ev
ices d
ep
en
d
s
o
n
m
etallic
n
an
o
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T
h
e
elec
tr
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ics
in
d
u
s
tr
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as
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f
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Si
n
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b
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s
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o
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ev
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-
s
m
aller
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s
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ch
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ca
p
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s
,
r
esis
to
r
s
,
d
io
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es
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d
tr
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s
is
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s
.
T
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ch
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ter
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all
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o
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ased
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n
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a
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n
an
o
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tr
an
s
is
to
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(
SiNW
T
)
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e
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s
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le
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th
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f
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tu
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n
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o
f
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s
ch
ar
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T
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e
r
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s
p
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ed
icted
t
h
at
th
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f
u
tu
r
e
o
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tr
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ics
d
e
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ices
will
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ig
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d
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s
o
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ad
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m
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n
t in
r
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tr
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s
is
to
r
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as a
r
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m
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p
[
2
-
1
0
]
.
E
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ic
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in
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p
l
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f
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teg
r
ated
Evaluation Warning : The document was created with Spire.PDF for Python.
I
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1
6
9
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T
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KOM
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T
elec
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m
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C
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p
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tr
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l
,
Vo
l.
1
8
,
No
.
5
,
Octo
b
e
r
2
0
2
0
:
259
7
-
260
5
2598
cir
cu
its
(
I
C
s
)
.
T
h
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latter
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cc
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r
r
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ete
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th
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ter
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al
tech
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o
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g
y
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o
ad
m
ap
f
o
r
s
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s
(
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m
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th
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ize
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tr
an
s
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h
r
in
k
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h
alf
[
1
1
]
.
Nan
o
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ar
e
s
till
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n
d
er
r
esear
ch
an
d
ex
p
e
r
im
en
t
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f
ield
s
i
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lab
o
r
ato
r
ies.
A
n
u
m
b
er
o
f
ea
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ly
s
tu
d
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h
av
e
s
h
o
wn
h
o
w
n
a
n
o
wir
es
ca
n
b
e
u
s
ed
to
b
u
ild
th
e
n
e
x
t
g
en
er
atio
n
o
f
elec
tr
o
n
ics
d
ev
ic
es
[
1
2
]
.
I
n
o
r
d
er
to
cr
ea
te
ac
tiv
e
elec
tr
o
n
ic
d
ev
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s
,
an
im
p
o
r
tan
t
s
tep
is
to
d
o
p
e
a
s
em
ico
n
d
u
cto
r
n
an
o
wir
e
to
cr
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t
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p
-
ty
p
e
an
d
n
-
ty
p
e
s
em
ico
n
d
u
cto
r
s
[
1
3
,
1
4
]
.
T
h
is
p
r
o
ce
s
s
h
as
alr
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d
y
b
ee
n
p
er
f
o
r
m
ed
o
n
in
d
i
v
id
u
a
l
n
an
o
wir
es.
Ov
er
th
e
last
d
ec
ad
e,
t
h
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e
h
av
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b
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n
m
an
y
r
esear
ch
es
f
o
cu
s
ed
o
n
SiNW
T
s
f
ab
r
icatio
n
[
1
5
-
1
8
]
with
d
if
f
er
e
n
t
p
ar
am
eter
s
s
u
ch
as
s
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n
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ctin
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m
ate
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ials
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in
s
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m
ater
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d
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s
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ab
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tio
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tech
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m
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t
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b
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m
lith
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r
a
p
h
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E
B
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n
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ato
m
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f
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icr
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(
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ap
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tain
a
s
m
allest
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o
n
f
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r
s
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T
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E
B
L
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ap
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tech
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o
ls
[
1
9
]
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r
b
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e
tech
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s
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n
th
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f
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ico
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“b
o
tto
m
-
u
p
”
ap
p
r
o
ac
h
es,
s
u
ch
as
th
e
v
ap
o
r
–
liq
u
i
d
–
s
o
lid
(
VL
S)
g
r
o
wth
tech
n
iq
u
e
[
2
0
]
.
T
h
ese
tech
n
o
l
o
g
ies
n
ee
d
to
ev
alu
ate
b
ased
o
n
th
e
im
p
r
o
v
e
m
en
ts
o
f
th
e
ch
ar
ac
ter
is
tics
an
d
th
e
m
in
im
u
m
s
ize
o
f
th
e
SiNW
T
.
So
,
th
is
p
ap
er
r
ev
iews
th
e
f
ab
r
icatio
n
tech
n
o
lo
g
ies
o
f
s
ilico
n
n
an
o
wir
e
tr
an
s
is
to
r
s
(
SiN
W
T
s
)
an
d
r
ap
id
ly
d
ev
elo
p
m
en
t
in
th
is
ar
ea
,
as
th
is
p
ap
er
p
r
esen
ts
v
ar
io
u
s
ty
p
es
o
f
SiNW
T
s
tr
u
ctu
r
es,
an
d
also
s
u
g
g
ests
a
n
ew
f
ac
to
r
to
e
v
al
u
ate
th
ese
tech
n
o
lo
g
ies
d
e
p
e
n
d
in
g
o
n
th
e
b
etter
ch
ar
ac
ter
is
tics
with
m
in
im
al
s
i
ze
.
2.
F
AB
RIC
AT
I
O
N
T
E
CH
NO
L
O
G
I
E
S
SiNW
T
s
co
u
ld
b
e
f
ab
r
icate
d
b
y
eith
er
to
p
–
d
o
wn
m
eth
o
d
u
s
i
n
g
ad
v
an
ce
d
lith
o
g
r
ap
h
y
to
o
ls
lik
e
d
ee
p
UV
s
tep
p
er
s
[
2
1
,
2
2
]
an
d
el
ec
tr
o
n
b
ea
m
lith
o
g
r
ap
h
y
[
2
3
]
,
o
r
b
o
tto
m
-
u
p
m
eth
o
d
s
with
ca
taly
s
t
-
ass
i
s
ted
g
r
o
wth
[
2
4
-
2
6
]
.
2
.
1
.
Ca
t
a
ly
s
t
-
a
s
s
is
t
ed
g
ro
wt
h t
ec
hn
o
lo
g
ies
T
h
e
v
ap
o
r
liq
u
i
d
s
o
lid
(
VL
S)
tech
n
iq
u
e
h
as
b
ee
d
ex
p
la
in
ed
f
ir
s
tly
b
y
W
ag
n
er
an
d
E
llis
[
2
7
]
.
T
h
e
VL
S
is
co
n
s
ed
e
r
ed
as
th
e
m
o
s
t
g
en
e
r
al
m
eth
o
d
o
f
m
an
u
f
ac
tu
r
in
g
in
v
o
lv
es
th
e
ch
em
i
ca
l
v
ap
o
r
d
e
p
o
s
itio
n
(
C
VD)
o
f
a
g
as
in
clu
d
in
g
s
ilico
n
an
d
th
e
f
o
llo
win
g
g
r
o
wth
o
f
s
ilico
n
n
an
o
wir
es.
Au
ca
ta
ly
s
t
an
d
Sil
an
e
g
a
s
h
as
b
ee
n
u
s
ed
to
g
r
o
wth
th
e
Si
n
an
o
wir
es
at
lo
w
tem
p
er
at
u
r
e
o
f
3
0
0
-
6
0
0
o
C
d
ep
en
d
in
g
o
n
VL
S
tech
n
iq
u
e.
T
h
is
m
eth
o
d
will
d
ep
en
d
o
n
th
e
s
ilan
e
g
as
d
ec
o
m
p
o
s
itio
n
at
lo
w
tem
p
e
r
atu
r
e
[
2
8
-
3
0
]
.
T
h
e
m
etal
ca
taly
s
t
d
r
o
p
let
h
as
b
ee
n
ap
p
ea
r
ed
o
n
t
o
p
en
d
o
n
t
h
e
Si n
an
o
wir
es a
s
a
r
esu
lt o
f
VL
S tec
h
n
iq
u
e
[
3
1
]
.
T
h
e
m
ec
h
an
is
m
th
at
h
as
b
ee
n
ex
ce
s
s
iv
ely
u
s
ed
in
th
e
f
ab
r
ic
atio
n
o
f
am
o
r
p
h
o
u
s
an
d
n
a
n
o
cr
y
s
tallin
e
s
ilico
n
th
in
f
ilm
s
is
th
e
p
lasm
a
en
h
an
ce
d
ch
e
m
ical
v
ap
o
r
d
e
p
o
s
itio
n
(
PECVD)
m
ec
h
an
is
m
.
T
h
e
p
r
o
d
u
ctio
n
o
f
Si
n
an
o
wir
es
d
ep
en
d
in
g
o
n
t
h
e
PECVD
tech
n
iq
u
e
[
3
2
]
will
b
e
u
s
ed
with
m
etal
ca
taly
s
t
c
o
v
er
ed
s
u
b
s
tr
ate
at
h
ig
h
er
d
ep
o
s
itio
n
r
ate
[
3
3
]
.
P
E
C
VD
h
as
b
ee
n
im
p
r
o
v
ed
to
p
u
ls
ed
PECVD
(
PP
E
C
VD)
w
h
ich
u
s
es
m
o
d
u
lated
p
lasma
to
s
u
p
p
o
r
t
th
e
d
ep
o
s
it
io
n
p
r
o
ce
s
s
.
Par
lev
liet
an
d
C
o
r
n
is
h
[
3
4
,
3
5
]
g
r
o
u
p
h
av
e
s
h
o
wn
th
at
PP
E
C
VD
tech
n
iq
u
e
co
u
ld
b
e
p
r
o
d
u
ce
d
Si
n
an
o
wir
es
at
h
ig
h
er
ar
ea
d
en
s
ity
m
o
r
e
th
an
n
o
r
m
al
PECVD.
T
h
e
PP
E
C
VD
g
r
o
ws
Si
n
an
o
wir
es
u
s
in
g
m
etal
ca
taly
s
ts
lik
e
Al,
Ag
,
C
u
,
Au
,
Sn
an
d
I
n
.
Acc
o
r
d
i
n
g
to
th
e
r
esu
lts
o
f
Par
lev
liet
an
d
C
o
r
n
is
h
[
3
4
,
3
5
]
g
r
o
u
p
,
th
e
Ag
was
th
e
b
es
t
ef
f
ec
tiv
e
ca
taly
s
ts
u
n
d
er
c
o
n
d
itio
n
s
o
f
g
r
o
wth
tem
p
er
atu
r
es,
a
n
d
also
A
g
ca
t
aly
s
ts
co
u
ld
b
e
p
r
o
d
u
ce
d
Si
n
a
n
o
wir
es
with
s
u
b
s
tr
ate
co
v
er
a
g
e
o
f
s
ev
en
t
o
eig
h
t
tim
es g
r
ea
ter
th
an
th
e
o
th
er
ca
taly
s
ts
.
I
n
t
h
e
v
a
p
o
r
li
q
u
i
d
s
o
lid
(
V
L
S)
tech
n
iq
u
e,
t
h
e
m
ai
n
f
u
n
ctio
n
o
f
th
e
m
etal
ca
tal
y
s
t
is
to
i
n
d
u
ce
th
e
o
u
tg
r
o
wth
o
f
Si
n
a
n
o
wi
r
es
with
s
in
g
le
cr
y
s
tal.
T
h
e
im
p
o
r
tan
t
co
n
d
itio
n
f
o
r
Si
to
b
e
g
r
o
wth
ed
as
a
n
an
o
wir
e
b
y
th
e
m
etal
ca
tal
y
s
t
it
m
u
s
t
b
e
q
u
ite
s
o
lu
b
le
in
th
e
ch
o
s
en
m
etal.
Fu
r
th
e
r
m
o
r
e,
th
e
m
etal
ca
taly
s
t
m
u
s
t
b
e
ch
o
s
en
to
im
p
ac
t
th
e
elec
tr
ical
ch
ar
ac
ter
is
tics
o
f
r
esu
ltin
g
n
an
o
wir
es
[
3
3
,
3
5
]
.
T
h
e
m
etal
in
d
u
ce
d
g
r
o
wt
h
(
MI
G)
m
eth
o
d
p
r
o
v
id
es
n
an
o
wir
es
with
o
u
t
u
s
in
g
a
g
as
s
ilico
n
s
o
u
r
ce
(
s
ilan
e)
an
d
Au
ca
taly
s
t.
T
h
is
h
as
p
o
ten
tial
to
u
s
e
th
e
n
an
o
wir
es
as
a
1
-
d
im
en
s
io
n
al
b
u
ild
in
g
b
l
o
ck
in
n
an
o
elec
tr
o
n
ics.
T
h
e
g
r
o
wth
tem
p
er
atu
r
e
o
f
MI
G
n
an
o
wir
e
s
o
f
5
7
5
o
C
is
s
til
l
a
lo
w
tem
p
er
atu
r
e,
co
m
p
etitiv
e
with
o
th
er
g
r
o
u
p
s
,
with
o
u
t
r
eq
u
ir
in
g
s
ilan
e
an
d
Au
ca
taly
s
t a
t 9
0
0
-
1
2
0
0
o
C
[
3
6
-
3
9
]
o
r
u
s
in
g
s
ilan
e
g
as a
t 8
0
0
o
C
[
4
0
]
.
Do
p
in
g
SiNW
ca
n
b
e
d
o
n
e
b
y
v
a
p
o
r
p
h
ase
d
o
p
i
n
g
m
eth
o
d
af
ter
SiNW
s
y
n
th
esis
,
to
m
ak
e
n
-
t
y
p
e
SiNW
,
p
h
o
s
p
h
o
r
u
s
-
d
o
p
ed
in
t
o
SiNW
,
an
d
to
m
ak
e
p
-
t
y
p
e
SiNW
,
b
o
r
o
n
-
d
o
p
e
d
in
to
SiNW
.
Yi
C
u
i
et
al.
[
4
1
]
r
ep
o
r
ts
b
o
r
o
n
-
d
o
p
ed
(
p
-
ty
p
e)
SiNW
s
.
A
SiN
W
s
s
in
g
le
cr
y
s
tal
with
r
ad
iu
s
o
f
5
-
1
0
n
m
h
as
b
ee
n
g
r
o
wth
b
y
a
n
an
o
clu
s
ter
m
e
d
iated
m
eth
o
d
.
L
ater
,
t
h
e
SiNW
s
wer
e
p
u
t
o
n
to
Si
s
u
b
s
tr
ates
to
p
ed
b
y
6
0
0
n
m
SiO
2
g
r
o
wth
ed
b
y
th
e
r
m
al
o
x
id
atio
n
.
Yi
C
u
i
et
al.
[
4
1
]
in
v
esti
g
a
te
th
e
ch
ar
ac
ter
is
tics
b
eh
av
io
r
o
f
th
e
SiNW
T
b
y
test
in
g
th
e
ef
f
ec
t
o
f
s
o
u
r
ce
an
d
d
r
ain
co
n
tacts
an
n
ea
lin
g
a
n
d
s
u
r
f
ac
e
p
ass
iv
atio
n
o
n
p
ar
a
m
eter
s
o
f
tr
an
s
is
to
r
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KOM
NI
KA
T
elec
o
m
m
u
n
C
o
m
p
u
t E
l Co
n
tr
o
l
A
n
ew fa
cto
r
fo
r
fa
b
r
ica
tio
n
te
ch
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o
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ies ev
a
lu
a
tio
n
f
o
r
s
ilic
o
n
n
a
n
o
w
ir
e
tr
a
n
s
is
to
r
s
(
Ya
s
ir
Ha
s
h
im
)
2599
c
h
ar
ac
ter
is
tics
.
T
h
e
an
n
ea
lin
g
p
r
o
ce
s
s
an
d
ch
em
ical
am
en
d
m
en
t
f
o
r
o
x
i
d
e
d
ef
ec
ts
p
ass
iv
atio
n
wer
e
lead
to
im
p
r
o
v
e
t
h
e
av
er
a
g
e
m
o
b
ilit
y
f
r
o
m
3
0
to
5
6
0
cm
2
/Vs
an
d
i
m
p
r
o
v
e
th
e
av
e
r
ag
e
tr
an
s
co
n
d
u
ctan
ce
f
r
o
m
4
5
to
8
0
0
n
S
with
m
a
x
im
u
m
v
alu
es
o
f
1
3
5
0
cm
2
/Vs
an
d
2
0
0
0
n
S,
r
esp
ec
tiv
ely
.
C
o
m
p
ar
i
s
o
n
th
e
r
esu
lts
o
f
tr
an
s
co
n
d
u
cta
n
ce
,
m
o
b
ilit
y
a
n
d
o
t
h
er
im
p
o
r
tan
t
elec
tr
ical
ch
ar
ac
ter
is
tics
o
f
SiNW
T
with
p
lan
a
r
MO
SF
E
T
s
h
o
ws
ess
en
tial
m
er
it
f
o
r
th
e
SiNW
s
as
s
tr
u
ctu
r
e
u
n
its
.
T
h
e
5
-
10
n
m
r
ad
iu
s
b
o
r
o
n
-
d
o
p
ed
(
p
-
ty
p
e
)
SiNW
s
h
a
s
be
en
u
s
ed
in
th
e
s
tu
d
y
o
f
Yi
C
u
i
et
al.
,
wh
er
e
th
e
s
o
u
r
ce
an
d
d
r
ai
n
co
n
tacts
wer
e
m
a
d
e
u
s
in
g
T
i
m
etal.
Fig
u
r
e
1
[
4
1
]
illu
s
tr
ates
th
e
o
u
tp
u
t
ch
a
r
ac
ter
is
tics
o
f
SiNW
T
(
d
r
ai
n
cu
r
r
en
t
(
I
)
v
s
.
s
o
u
r
ce
-
d
r
ain
v
o
ltag
e
(
V
sd
))
with
T
i
s
o
u
r
ce
an
d
d
r
ain
co
n
ta
cted
with
S
iNW
d
ev
ice
af
ter
an
d
b
ef
o
r
e
an
n
ea
lin
g
.
T
h
is
f
ig
u
r
e
s
h
o
ws
th
at
af
ter
an
n
ea
lin
g
,
th
e
I
-
V
sd
c
h
ar
ac
te
r
is
tics
b
e
m
o
r
e
s
y
m
m
etr
ical
an
d
lin
ea
r
,
3
-
f
o
l
d
co
n
d
u
cta
n
ce
in
cr
ea
s
in
g
,
an
d
th
e
b
eh
av
i
o
r
o
f
tr
an
s
p
o
r
t w
er
e
co
n
s
id
er
ed
m
o
r
e
s
tab
le
.
Fig
u
r
e
1
.
T
h
e
o
u
t
p
u
t c
h
a
r
ac
ter
is
tics
o
f
SiN
W
T
af
ter
(
r
ed
)
a
n
d
b
ef
o
r
e
(
g
r
ee
n
)
t
h
er
m
al
an
n
e
alin
g
[
41
]
J
.
Go
ld
b
er
g
er
et
al.
[
4
2
]
f
ab
r
icate
d
v
e
r
tically
o
r
ie
n
ted
Si
n
an
o
wir
es
as
s
h
o
wn
in
Fig
u
r
e
2
[
4
2
]
.
Fig
u
r
e
2
(
A
)
s
h
o
ws
th
e
im
ag
e
o
f
Si
n
an
o
wir
es
th
at
g
r
o
wn
v
er
tically
,
an
d
Fig
u
r
e
2
(
B
)
illu
s
tr
ates
th
e
im
ag
e
o
f
cr
o
s
s
-
s
ec
tio
n
o
f
Si
n
an
o
wir
e
c
o
ated
b
y
SiO
2
as
an
in
s
u
lato
r
.
W
h
ile
Fig
u
r
e
2
(
C
)
ex
p
lain
s
th
e
h
ig
h
-
r
eso
lu
tio
n
im
ag
e
o
f
a
Si
n
a
n
o
wir
e
wit
h
an
i
n
n
er
r
ed
u
c
ed
d
iam
eter
to
≈
4
.
5
n
m
.
T
h
ese
n
an
o
wi
r
es
wer
e
g
r
o
wn
o
n
d
eg
en
er
ately
b
o
r
o
n
-
d
o
p
e
d
p
-
t
y
p
e
(
ρ
<
0
.
0
0
5
Ω
cm
)
Si
(
1
1
1
)
s
u
b
s
tr
ates
as
d
escr
ib
ed
in
[
4
3
]
.
T
h
e
wir
es
wer
e
s
y
n
th
esized
v
ia
th
e
v
ap
o
r
-
liq
u
id
-
s
o
lid
(
VL
S)
g
r
o
wth
m
ec
h
an
is
m
in
a
ch
em
ical
v
ap
o
r
d
ep
o
s
itio
n
(
C
VD)
r
ea
cto
r
u
s
in
g
a
SiC
l
4
p
r
ec
u
r
s
o
r
,
a
B
B
r
3
d
o
p
an
t
s
o
u
r
ce
,
an
d
m
etal
n
a
n
o
p
a
r
ticle
g
r
o
wth
-
d
ir
ec
tin
g
ca
taly
s
ts
.
Fig
u
r
e
2
(
A
)
is
a
s
ca
n
n
in
g
ele
ctr
o
n
m
icr
o
s
co
p
y
(
SEM
)
im
ag
e
o
f
Si n
an
o
wir
es g
r
o
wn
f
r
o
m
5
0
n
m
Au
c
o
llo
id
s
.
T
r
an
s
m
is
s
io
n
elec
tr
o
n
m
icr
o
s
co
p
y
(
T
E
M)
an
aly
s
is
co
n
f
i
r
m
ed
th
at
th
ese
n
an
o
wir
es
ar
e
s
i
n
g
le
cr
y
s
tallin
e
an
d
g
r
o
w
alo
n
g
th
e
(
1
1
1
)
d
ir
ec
ti
o
n
.
Si
n
an
o
wir
e
ar
r
a
y
s
g
r
o
w
n
b
y
th
e
ab
o
v
e
m
eth
o
d
ex
h
ib
it
n
ar
r
o
w
d
iam
ete
r
d
is
tr
ib
u
tio
n
s
with
s
tan
d
ar
d
d
ev
iatio
n
s
(
ty
p
ically
≤
9
%)
e
q
u
al
to
th
o
s
e
o
f
th
e
co
llo
id
ca
taly
s
ts
[
4
2
,
4
3
]
.
As
a
g
o
o
d
e
x
am
p
le
f
o
r
f
a
b
r
ic
atio
n
o
f
SiNW
T
with
to
p
g
at
e
s
tr
u
ct
u
r
e
we
ca
n
tak
e
[
4
4
]
,
an
d
T
a
b
le
1
s
h
o
ws
th
e
f
ab
r
icatio
n
s
u
m
m
ar
y
o
f
al
l
lay
er
s
o
f
th
is
SiNW
T
.
Fin
all
y
,
th
e
r
esu
ltin
g
SiNW
T
was
an
n
ea
led
in
am
b
ien
t
f
o
r
m
in
g
g
as
(
5
%
H
2
in
N
2
)
a
t
3
8
0
o
C
f
o
r
1
5
m
in
u
tes
b
y
u
s
in
g
a
r
ap
id
th
er
m
al
a
n
n
ea
lin
g
to
o
l.
T
h
is
s
tep
is
cr
itical
f
o
r
ac
h
iev
i
n
g
b
etter
ele
ctr
ical
p
er
f
o
r
m
an
ce
d
u
e
to
th
e
f
o
llo
win
g
two
r
e
aso
n
s
:
−
T
h
e
f
o
r
m
in
g
g
as
an
n
ea
lin
g
ca
n
g
r
ea
tly
r
ed
u
ce
th
e
n
an
o
wir
e
d
ev
ice
in
ter
f
ac
e
s
tates,
wh
ic
h
ca
n
s
er
io
u
s
ly
d
eter
io
r
ate
th
e
d
ev
ice
p
e
r
f
o
r
m
an
ce
,
s
u
ch
as th
e
t
r
a
n
s
is
to
r
s
u
b
th
r
esh
o
ld
s
lo
p
e
.
−
T
o
im
p
r
o
v
e
Al
co
n
tact
with
n
an
o
wir
e.
Fig
u
r
e
2
.
(
A
)
Si n
an
o
wir
es th
a
t g
r
o
wn
v
er
tically
,
(
B
)
cr
o
s
s
-
s
ec
tio
n
o
f
Si n
a
n
o
wir
e
co
ate
d
b
y
SiO2
,
(
C
)
Si n
an
o
wir
e
with
an
in
n
er
r
ed
u
ce
d
d
iam
eter
to
≈
4
.
5
n
m
[
42
]
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
1
6
9
3
-
6
9
3
0
T
E
L
KOM
NI
KA
T
elec
o
m
m
u
n
C
o
m
p
u
t E
l Co
n
tr
o
l
,
Vo
l.
1
8
,
No
.
5
,
Octo
b
e
r
2
0
2
0
:
259
7
-
260
5
2600
T
ab
le
1
.
T
h
e
f
ab
r
icatio
n
s
u
m
m
ar
y
o
f
all
lay
er
s
o
f
SiNW
T
La
y
e
r
D
i
me
n
si
o
n
s
C
o
n
d
i
t
i
o
n
s
N
a
n
o
w
i
r
e
2
0
n
m
d
i
a
m
e
t
e
r
2
0
μm
~
3
0
μm
i
n
l
e
n
g
t
h
4
2
0
o
C
,
u
n
d
e
r
5
0
0
mT
o
r
r
S
i
H
4
v
i
a
a
(
V
LS)
mec
h
a
n
i
sm
O
x
i
d
e
1
n
m ~
2
n
m
Th
e
r
m
a
l
l
y
o
x
i
d
i
z
e
d
a
t
7
0
0
o
C
f
o
r
3
0
m
i
n
u
t
e
s
S
o
u
r
c
e
a
n
d
d
r
a
i
n
e
l
e
c
t
r
o
d
e
s
A
l
a
y
e
r
o
f
A
l
w
i
t
h
sp
a
c
i
n
g
3
μ
m
D
e
p
o
si
t
e
d
b
y
t
h
e
r
m
a
l
e
v
a
p
o
r
a
t
i
o
n
G
a
t
e
e
l
e
c
t
r
o
d
e
HfO
2
(
~
2
5
n
m)
A
t
o
m
i
c
l
a
y
e
r
d
e
p
o
si
t
i
o
n
a
t
2
5
0
o
C
A
l
t
o
p
g
a
t
e
e
l
e
c
t
r
o
d
e
D
e
p
o
si
t
e
d
b
y
t
h
e
r
m
a
l
e
v
a
p
o
r
a
t
i
o
n
T
h
e
Al
in
th
e
s
o
u
r
ce
/d
r
ain
r
eg
io
n
s
f
o
r
m
s
Sch
o
ttk
y
b
ar
r
ier
co
n
tacts
to
th
e
SiNW
s
.
Fig
u
r
e
3
(
a
)
s
h
o
ws
th
e
o
u
tp
u
t
ch
ar
ac
ter
is
tics
o
f
f
ab
r
icate
d
SiNW
T
with
to
p
g
ate
s
tr
u
ctu
r
e.
Fig
u
r
e
3
(
b
)
d
is
p
lay
th
e
s
ca
n
n
in
g
elec
tr
o
n
m
icr
o
s
co
p
ic
im
ag
es
o
f
th
e
f
ab
r
icate
d
SiN
W
T
an
d
th
e
to
p
g
ate
is
v
er
y
cle
ar
in
th
is
im
ag
e
as
ex
p
lain
ed
in
[
4
4
]
.
I
m
p
r
o
v
in
g
th
e
elec
tr
ical
ch
ar
ac
ter
is
tics
o
f
SiNW
T
s
b
y
m
in
im
izin
g
co
n
tact
r
esis
tan
ce
v
alu
es
h
as
b
ee
n
s
tu
d
ied
b
y
C
.
C
elle
et
al.
[
4
5
]
.
T
h
is
will
ten
d
to
e
n
h
an
ce
ca
r
r
ier
in
j
ec
tio
n
b
y
r
ed
u
cin
g
th
e
co
n
tact
r
esis
tan
ce
v
alu
es
a
s
a
r
esu
lt
o
f
h
ig
h
d
o
p
in
g
at
b
o
th
en
d
s
o
f
t
h
e
Si
n
an
o
wir
es.
I
t
is
well
r
ec
o
g
n
ized
th
at
f
o
r
h
ig
h
ly
d
o
p
e
d
Si n
an
o
wir
es tr
an
s
is
to
r
,
at
tr
an
s
co
n
d
u
ctan
ce
m
ea
s
u
r
em
en
t,
th
e
co
n
t
ac
t r
esis
tan
ce
wi
ll b
e
n
eg
lecte
d
,
wh
ile
it
m
ak
es
a
n
ess
en
tial
im
p
r
o
v
em
en
t
f
o
r
Si
n
an
o
wir
e
tr
a
n
s
is
to
r
with
lig
h
t
d
o
p
in
g
.
Acc
o
r
d
in
g
to
th
e
s
tu
d
y
r
ep
o
r
ted
b
y
C
.
C
elle
et
al.
[
4
5
]
,
th
e
VL
S
tech
n
iq
u
e
h
as
b
ee
n
u
s
ed
in
th
e
s
y
n
th
esis
o
f
SiNW
s
.
T
h
e
SiNW
s
h
as
b
ee
n
d
o
p
ed
at
th
e
en
d
s
o
f
n
an
o
wir
es
o
n
ly
d
ir
ec
tly
d
u
r
in
g
t
h
e
s
y
n
th
esis
b
y
ad
d
in
g
1
%
PH3
in
h
y
d
r
o
g
en
.
T
h
e
r
atio
o
f
P:S
i
h
as
b
ee
n
s
et
to
2
*
1
0
−2
f
o
r
t
h
e
d
o
p
ed
en
d
s
o
f
th
e
NW
s
[
4
6
,
4
7
]
.
Fig
u
r
e
4
s
h
o
ws
th
e
s
tr
u
ctu
r
e
an
d
im
ag
e
o
f
a
f
lex
ib
le
Si
n
an
o
wir
e
t
r
an
s
is
to
r
,
wh
er
e
th
e
ax
ial
d
o
p
in
g
o
f
Si
n
an
o
wir
es
is
in
th
e
f
o
r
m
o
f
n
++
-
i
-
n
++
.
Fig
u
r
e
3
.
(
a
)
Ou
tp
u
t c
h
ar
ac
ter
i
s
tics
o
f
SiN
W
T
,
(
b
)
th
e
im
a
g
es o
f
(
t
o
p
g
ate
)
SiNW
T
with
1
μ
m
g
ate
-
s
o
u
r
c
e/d
r
ain
[
44
]
Fig
u
r
e
4
.
T
h
e
s
tr
u
ctu
r
e
a
n
d
im
ag
e
o
f
a
f
lex
ib
le
Si n
an
o
wir
e
t
r
an
s
is
to
r
,
th
e
ax
ial
d
o
p
in
g
o
f
Si n
an
o
wir
es with
f
o
r
m
n
++
-
i
-
n
++
[
45
]
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KOM
NI
KA
T
elec
o
m
m
u
n
C
o
m
p
u
t E
l Co
n
tr
o
l
A
n
ew fa
cto
r
fo
r
fa
b
r
ica
tio
n
te
ch
n
o
lo
g
ies ev
a
lu
a
tio
n
f
o
r
s
ilic
o
n
n
a
n
o
w
ir
e
tr
a
n
s
is
to
r
s
(
Ya
s
ir
Ha
s
h
im
)
2601
2
.
2
.
EBL
t
ec
hn
o
lo
g
y
H.
W
.
Yo
o
n
et
al.
[
4
8
]
h
a
v
e
b
ee
n
d
ev
elo
p
e
d
a
n
ew
f
a
b
r
icatio
n
tech
n
o
l
o
g
y
f
o
r
SiNW
FET
f
o
r
b
io
-
s
en
s
in
g
ap
p
licatio
n
s
.
Fig
u
r
e
5
(
a
)
d
is
p
lay
s
th
e
s
tr
u
ctu
r
e
o
f
s
im
p
le
b
ac
k
-
g
ate
co
n
f
i
g
u
r
atio
n
SiNW
T
o
n
s
ilico
n
-
on
-
in
s
u
lato
r
(
SOI
)
s
u
b
s
tr
ate.
T
h
is
d
esig
n
is
d
ir
ec
te
d
th
e
f
ab
r
icatio
n
p
r
o
ce
s
s
to
b
e
l
o
w
co
s
t.
T
h
er
e
ar
e
n
o
s
o
u
r
ce
an
d
d
r
ai
n
d
o
p
i
n
g
,
a
n
d
also
th
is
d
esig
n
h
as
n
o
to
p
m
etal
co
n
tact
to
th
e
b
ac
k
g
ate.
T
h
e
im
p
o
r
ta
n
t
k
ey
f
o
r
t
h
is
tr
an
s
is
to
r
is
th
e
m
an
u
f
ac
tu
r
in
g
o
f
Si
n
a
n
o
wir
es.
T
h
e
f
ab
r
icatio
n
p
r
o
ce
s
s
es
o
f
th
e
Si
n
an
o
wir
es
h
a
v
e
b
ee
n
co
n
d
u
cted
u
s
in
g
two
elec
tr
o
n
b
ea
m
l
ith
o
g
r
ap
h
y
(
E
B
L
)
.
Nan
o
d
im
en
s
io
n
tr
e
n
c
h
es
in
p
o
ly
m
eth
y
l
m
eth
ac
r
y
late
h
as
b
e
en
p
atter
n
ed
u
s
in
g
E
B
L
,
f
o
llo
wed
b
y
li
f
to
f
f
p
r
o
ce
s
s
u
s
in
g
C
r
an
d
th
en
etch
in
g
o
f
Si
b
y
I
C
P
p
lasma
.
An
o
th
er
alter
n
ati
v
e
E
B
L
p
r
o
ce
d
u
r
e
h
as
b
ee
n
d
ev
elo
p
ed
u
s
in
g
h
y
d
r
o
g
en
s
ils
esq
u
io
x
an
e
(
HSQ)
r
esis
ts
.
T
h
is
E
B
L
f
ab
r
icatio
n
m
eth
o
d
p
r
o
d
u
ce
s
SiNW
T
s
wit
h
1
2
-
5
0
n
m
d
iam
eter
s
,
3
0
-
7
0
n
m
h
ig
h
,
a
n
d
1
0
μ
m
len
g
th
Si
n
an
o
wir
es
o
n
Sil
ico
n
-
on
-
i
n
s
u
lato
r
s
u
b
s
tr
ates,
wh
ile
th
e
SiO
2
lay
er
was
ab
o
u
t
1
4
0
n
m
.
Fig
u
r
e
5
(
b
)
illu
s
tr
ates
th
e
d
r
ain
to
g
ate
cu
r
r
en
t
r
atio
(
I
d
/I
g
)
with
g
ate
v
o
lt
ag
e
(
V
g
)
ch
ar
ac
ter
is
tics
o
f
a
f
a
b
r
icate
d
SiNW
T
at
V
ds
b
ias
o
f
6
V.
Fo
r
s
u
ch
SiN
W
T
s
th
at
f
ab
r
icate
d
u
s
in
g
E
B
L
,
th
e
ON/OF
F
cu
r
r
en
t
r
atio
is
o
f
ab
o
u
t
1
0
0
0
an
d
r
ea
s
o
n
ab
le
s
m
all
g
ate
leak
ag
e
cu
r
r
en
t is o
b
s
er
v
ed
,
wh
ile
th
e
co
n
d
u
cta
n
ce
o
f
t
h
e
SiNW
T
s
is
ab
o
u
t
1
0
n
S.
(
a)
(
b
)
Fig
u
r
e
5
.
(
a
)
SiNW
T
s
o
n
SOI
s
u
b
s
tr
ate
cr
o
s
s
-
s
ec
tio
n
s
tr
u
ctu
r
e
an
d
(
b
)
SiNW
T
d
r
ain
to
g
at
e
cu
r
r
en
t
r
atio
(I
d
/I
g
)
with
g
ate
v
o
ltag
e
(
V
g
)
c
h
ar
ac
ter
is
tics
o
f
a
f
ab
r
icate
d
SiNW
T
at
V
ds
b
ias o
f
6
V
[
4
8
]
2
.
3
.
AF
M
t
ec
hn
o
lo
g
y
J
.
Ma
r
tin
ez
et
al.
[
4
9
]
d
is
cu
s
s
es
th
e
SiN
W
T
with
u
s
in
g
a
n
o
th
e
r
tech
n
o
lo
g
y
o
f
ato
m
ic
f
o
r
ce
mi
cr
o
s
co
p
e
(
AFM)
n
an
o
lith
o
g
r
ap
h
y
to
o
b
tain
a
s
m
allest
d
im
en
s
io
n
(
4
n
m
)
f
o
r
s
ilico
n
n
an
o
wir
e.
T
h
ey
in
v
esti
g
ate
th
e
f
ab
r
icatio
n
o
f
4
n
m
ch
an
n
el
wid
th
SiNW
T
s
w
ith
AFM
n
an
o
lith
o
g
r
ap
h
y
d
ep
e
n
d
in
g
o
n
th
e
lo
ca
l
o
x
id
atio
n
o
f
a
SOI
s
u
r
f
ac
e
with
a
r
an
g
e
o
f
r
esis
tiv
ity
(
ρ
)
o
f
1
0
-
2
0
Ω
c
m
.
T
h
e
ato
m
ic
f
o
r
ce
m
icr
o
s
co
p
e
h
as
b
ee
n
u
s
ed
to
m
ak
e
a
n
a
r
r
o
w
m
ask
o
f
SiO
2
o
n
to
p
o
f
a
SOI
s
u
b
s
tr
ate.
T
h
e
lo
n
g
a
n
d
n
ar
r
o
w
s
ec
to
r
o
f
SiO
2
th
at
r
e
p
r
esen
ts
m
ask
h
as
b
ee
n
f
a
b
r
icate
d
b
y
g
iv
in
g
p
u
ls
es
o
f
v
o
ltag
e
b
et
wee
n
th
e
p
r
o
b
e
o
f
AFM
an
d
th
e
s
u
r
f
ac
e
o
f
s
ilico
n
.
T
h
e
p
u
ls
es
o
f
v
o
ltag
e
en
c
o
u
r
ag
e
th
e
f
o
r
m
in
g
o
f
wate
r
an
d
later
th
e
an
o
d
ic
o
x
id
atio
n
o
f
th
e
Si
s
u
r
f
ac
e.
T
h
e
f
o
llo
win
g
s
tep
is
etch
in
g
o
f
th
e
u
n
m
ask
e
d
s
ilico
n
b
y
eith
er
wet
o
r
d
r
y
ch
em
ical
etch
in
g
p
r
o
ce
s
s
es.
Af
ter
etch
in
g
,
th
e
lo
ca
l
o
x
id
e
m
ask
h
as
b
ee
n
r
e
m
o
v
e
d
b
y
HF,
an
d
th
en
th
e
m
etal
co
n
tacts
(
p
latin
u
m
o
r
g
o
ld
)
f
o
r
s
o
u
r
ce
an
d
d
r
ain
o
f
SiNW
s
h
as
b
ee
n
f
o
r
m
ed
b
y
elec
tr
o
n
b
ea
m
lith
o
g
r
ap
h
y
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
1
6
9
3
-
6
9
3
0
T
E
L
KOM
NI
KA
T
elec
o
m
m
u
n
C
o
m
p
u
t E
l Co
n
tr
o
l
,
Vo
l.
1
8
,
No
.
5
,
Octo
b
e
r
2
0
2
0
:
259
7
-
260
5
2602
T
ab
le
2
p
r
esen
ts
all
m
ain
s
te
p
s
o
f
ato
m
ic
f
o
r
ce
m
icr
o
s
co
p
e
(
AFM)
n
an
o
lith
o
g
r
ap
h
y
p
r
o
ce
s
s
es
o
f
Si
NW
T
.
Fig
u
r
e
6
(
A)
s
h
o
ws
th
e
f
a
b
r
i
ca
tio
n
s
tep
s
o
f
4
n
m
c
h
an
n
el
wid
th
SiN
W
T
u
s
in
g
AFM
n
an
o
lith
o
g
r
a
p
h
y
a
n
d
Fig
u
r
e
6
(
B
)
illu
s
tr
ates
th
e
o
u
t
p
u
t
ch
ar
ac
ter
is
tics
o
f
th
e
SiNW
T
with
4
n
m
wid
th
o
f
c
h
an
n
el
th
at
f
ab
r
icate
d
b
y
AFM
n
an
o
lith
o
g
r
a
p
h
y
.
(
A)
(
B
)
Fig
u
r
e
6
.
(
A
)
T
h
e
4
n
m
SiNW
T
f
ab
r
icatio
n
s
tep
s
u
s
in
g
AFM
,
(
B
)
T
h
e
o
u
t
p
u
t c
h
ar
ac
te
r
is
tics
o
f
th
e
SiNW
T
with
4
n
m
wid
t
h
o
f
c
h
an
n
el
[
4
9
]
(
co
n
tin
u
e)
T
ab
le
2
.
T
h
e
m
ain
s
tep
s
o
f
at
o
m
ic
f
o
r
ce
m
icr
o
s
co
p
e
(
AFM)
n
an
o
lith
o
g
r
ap
h
y
p
r
o
ce
s
s
es o
f
SiNW
T
La
y
e
r
D
i
me
n
si
o
n
s
C
o
n
d
i
t
i
o
n
s
N
a
n
o
w
i
r
e
4
n
m w
i
d
t
h
,
5
5
n
m
h
i
g
h
,
1
0
μm
i
n
l
e
n
g
t
h
A
F
M
n
a
n
o
l
i
t
h
o
g
r
a
p
h
y
f
o
l
l
o
w
e
d
b
y
w
e
t
e
t
c
h
i
n
g
t
o
f
o
r
m n
a
n
o
w
i
r
e
a
n
d
s
i
d
e
g
a
t
e
O
x
i
d
e
1
4
0
n
m
si
d
e
g
a
t
e
g
a
p
S
o
u
r
c
e
a
n
d
d
r
a
i
n
e
l
e
c
t
r
o
d
e
s
A
l
a
y
e
r
o
f
g
o
l
d
3.
C
O
M
P
ARI
SI
O
N
AN
D
RE
S
UL
T
S
As
a
r
esu
lt
o
f
m
a
n
y
d
if
f
er
e
n
t
f
ac
to
r
s
am
o
n
g
all
tech
n
o
lo
g
ies
to
f
ab
r
icate
t
h
e
n
a
n
o
wir
e
tr
a
n
s
is
to
r
s
,
it
is
n
o
te
th
at
th
e
d
if
f
icu
lties
to
ch
o
o
s
e
an
ac
cu
r
ate
to
o
l
to
m
e
asu
r
e
an
d
ev
alu
ate
th
e
b
est
p
r
ef
er
en
ce
am
o
n
g
all
th
ese
n
an
o
wir
e
tr
an
s
is
to
r
s
,
we
n
o
te
th
at
t
h
er
e
is
a
d
if
f
er
e
n
ce
in
m
an
u
f
ac
t
u
r
in
g
tech
n
o
l
o
g
y
,
th
er
e
is
also
a
d
if
f
er
en
ce
in
t
h
e
cr
o
s
s
-
s
ec
tio
n
o
f
n
an
o
wir
es.
Sin
ce
th
e
m
ain
p
u
r
p
o
s
e
o
f
f
a
b
r
icatio
n
NW
T
with
d
if
f
er
en
t
tech
n
o
lo
g
ies
a
n
d
s
ca
lin
g
d
o
wn
n
a
n
o
wir
e
tr
a
n
s
is
to
r
s
is
th
e
p
o
s
s
ib
ilit
y
o
f
p
u
ttin
g
it
in
to
an
elec
tr
o
n
ic
cir
cu
it
i
n
I
C
with
th
e
co
n
s
u
m
p
tio
n
o
f
l
ess
v
alu
e
o
f
p
o
wer
,
a
n
d
t
h
is
to
w
p
r
in
cip
les
h
as
b
ee
n
c
h
o
s
e
n
to
d
e
v
elo
p
a
n
ew
m
ea
s
u
r
em
en
t
p
r
e
f
er
en
ce
f
ac
to
r
.
T
h
is
f
ac
to
r
will
s
h
o
w
th
e
ab
ilit
y
o
f
p
u
ttin
g
a
t
r
an
s
is
to
r
in
I
C
s
,
th
is
f
ac
to
r
will
ca
ll
d
ev
i
ce
in
teg
r
atio
n
f
ac
to
r
(
DI
F).
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KOM
NI
KA
T
elec
o
m
m
u
n
C
o
m
p
u
t E
l Co
n
tr
o
l
A
n
ew fa
cto
r
fo
r
fa
b
r
ica
tio
n
te
ch
n
o
lo
g
ies ev
a
lu
a
tio
n
f
o
r
s
ilic
o
n
n
a
n
o
w
ir
e
tr
a
n
s
is
to
r
s
(
Ya
s
ir
Ha
s
h
im
)
2603
Dev
ice
in
teg
r
atio
n
f
ac
to
r
(
u
n
i
t
less
)
is
p
r
o
p
o
r
ti
o
n
al
in
v
er
s
ely
with
p
o
wer
d
is
s
ip
ated
in
th
e
ch
an
n
el
(W
ch
)
an
d
ch
an
n
el
ar
ea
(
A
ch
):
DIF
∝
1
W
ch
∗
A
ch
(
1
)
DIF
=
k
W
ch
∗
A
ch
(
2
)
Po
wer
W
ch
ch
o
s
en
to
b
e
at
V
D
=V
G
=1
V
as
a
r
ef
er
en
ce
v
o
ltag
e
f
o
r
all
SiNW
T
s
,
an
d
th
e
p
o
wer
co
n
s
u
m
p
tio
n
i
n
ch
an
n
el
will b
e
th
e
c
u
r
r
e
n
t f
lo
w
in
ch
an
n
el
I
D
m
u
ltip
ly
b
y
v
o
ltag
e
ac
r
o
s
s
it V
D
,
th
en
:
DIF
=
k
I
D
∗
V
D
∗
A
ch
(
3
)
W
e
ass
u
m
ed
th
at
K
co
n
s
tan
t
will
b
e
ca
lcu
lated
at
DI
F
=
1
an
d
at
th
e
f
o
llo
win
g
p
ar
a
m
eter
s
:
I
D
=
1
μ
A,
V
D
=
1
V,
D
=
1
n
m
a
n
d
L
=
1
μ
m
,
th
e
n
k
will b
e:
K=
1
*
1
0
-
21
watt
m
2
.
DI
F
ca
lcu
lated
f
o
r
th
r
ee
tr
an
s
is
to
r
s
f
ab
r
icate
d
with
t
h
r
ee
t
y
p
es
o
f
tech
n
o
lo
g
y
,
f
ir
s
t
tr
an
s
is
to
r
h
ad
ch
o
s
en
f
r
o
m
r
ef
e
r
en
ce
[
4
4
]
.
T
h
is
d
ev
ice
f
ab
r
icate
d
u
s
in
g
VL
S
tech
n
o
lo
g
y
as
m
en
tio
n
ed
in
s
ec
tio
n
2
.
1
,
ac
co
r
d
in
g
to
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9
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4
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4.
CO
NCLU
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tech
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th
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tech
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lo
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a
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f
ac
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was
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v
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lled
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F.
T
h
e
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lts
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h
o
w
th
at
th
e
b
est
tech
n
o
lo
g
y
to
u
s
e
in
t
h
e
f
u
t
u
r
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to
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ab
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ca
te
s
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n
an
o
tr
a
n
s
is
to
r
s
f
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r
f
u
tu
r
e
I
C
s
is
AFM
n
an
o
lith
o
g
r
a
p
h
y
.
ACK
NO
WL
E
DG
E
M
E
NT
S
T
h
is
wo
r
k
was
s
u
p
p
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ted
b
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e
R
DU
Gr
an
t
(
No
:
R
D
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8
0
3
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5
0
)
o
f
th
e
Un
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s
iti
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lay
s
ia
Pah
an
g
,
Ma
lay
s
ia.
RE
F
E
R
E
NC
E
S
[1
]
P
.
C.
M
c
I
n
ty
re
,
A.
F
o
n
tcu
b
e
rta
i
M
o
rra
l,
“
S
e
m
ico
n
d
u
c
to
r
n
a
n
o
wir
e
s:
to
g
ro
w
o
r
n
o
t
t
o
g
r
o
w?
,
”
M
a
ter
ia
ls
T
o
d
a
y
Na
n
o
,
v
o
l.
9
,
2
0
2
0
.
d
o
i:
h
tt
p
s://
d
o
i.
o
rg
/1
0
.
1
0
1
6
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.
m
t
n
a
n
o
.
2
0
1
9
.
1
0
0
0
5
8
.
[2
]
H.
Ka
m
imu
ra
,
“
Nic
k
e
l
sili
c
id
e
c
o
n
tac
t
fo
r
S
il
ic
o
n
Na
n
o
wire
F
ET
,
”
M
a
ste
r
T
h
e
sis
,
Iwa
i
Lab
o
ra
t
o
ry
-
De
p
a
rtme
n
t
o
f
El
e
c
tro
n
ics
a
n
d
Ap
p
li
e
d
P
h
y
sic
s
-
To
k
y
o
I
n
stit
u
te o
f
Tec
h
n
o
lo
g
y
,
2
0
0
9
.
[3
]
Tah
a
H,
Ja
b
b
a
r
W,
Ha
sh
im
Y,
M
a
n
a
p
H.
“
Tem
p
e
ra
tu
re
Ch
a
ra
c
teristics
o
f
S
il
ico
n
Na
n
o
wire
Tran
sis
to
r
De
p
e
n
d
in
g
o
n
O
x
id
e
T
h
ick
n
e
ss
,
”
J
o
u
rn
a
l
o
f
Na
n
o
-
a
n
d
El
e
c
tro
n
ic
Ph
y
sic
s
,
v
o
l.
1
1
,
n
o
.
3
,
p
p
.
0
3
0
2
7
1
-
4
,
2
0
1
9
.
[4
]
M
.
Wei,
J.
L
.
M
a
c
M
a
n
u
s
-
Drisc
o
l
l.
“
Va
p
o
r
tran
sp
o
rt
g
ro
wt
h
o
f
Z
n
O
n
a
n
o
wire
s u
sin
g
a
p
re
d
e
p
o
sited
n
a
n
o
c
ry
sta
ll
in
e
tem
p
late
,
”
J
o
u
rn
a
l
o
f
Ph
y
sic
s:
Co
n
fer
e
n
c
e
S
e
rie
s
,
v
o
l
.
2
6
,
n
o
.
1
,
p
p
.
3
0
0
–
3
0
3
,
2
0
0
6
.
[5
]
Ha
sh
im
Y.
“
A
Re
v
iew
o
n
Tran
si
sto
rs
in
Na
n
o
Dim
e
n
sio
n
s,”
I
n
ter
n
a
ti
o
n
a
l
J
o
u
rn
a
l
o
f
En
g
i
n
e
e
rin
g
T
e
c
h
n
o
l
o
g
y
a
n
d
S
c
ien
c
e
s (IJET
S
)
,
v
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l
4
,
n
o
.
1
,
p
p
.
8
-
1
8
,
2
0
1
5
.
[6
]
Ha
sh
im
Y,
S
id
e
k
O.
“
Dim
e
n
sio
n
a
l
Op
ti
m
iza
ti
o
n
o
f
Na
n
o
wire
-
Co
m
p
lem
e
n
tary
M
e
ta
l
O
x
id
e
S
e
m
ico
n
d
u
c
to
r
In
v
e
rter,”
J
o
u
rn
a
l
o
f
n
a
n
o
sc
ien
c
e
a
n
d
n
a
n
o
tec
h
n
o
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o
g
y
,
v
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l.
1
3
,
n
o
.
1
,
p
p
.
2
4
2
-
2
4
9
,
2
0
1
3
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
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6
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2604
[7
]
Ha
sh
im
Y
.
,
S
id
e
k
O.
“
Op
ti
m
iza
ti
o
n
o
f
Na
n
o
wire
-
Re
sista
n
c
e
Lo
a
d
Lo
g
ic
In
v
e
rter”
,
J
o
u
rn
a
l
o
f
n
a
n
o
sc
ien
c
e
a
n
d
n
a
n
o
tec
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,
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1
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,
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9
,
p
p
.
6
8
4
0
-
6
8
4
2
,
2
0
1
5
.
[8
]
Ha
sh
im
Y.
“
Op
ti
m
iza
ti
o
n
o
f
c
h
a
n
n
e
l
len
g
th
n
a
n
o
-
sc
a
le
S
iNWT
b
a
se
d
S
RAM
c
e
ll
,
”
AIP
Co
n
fer
e
n
c
e
Pro
c
e
e
d
in
g
s
,
v
o
l.
1
7
7
4
,
n
o
.
1
,
p
p
.
0
5
0
0
2
0
,
2
0
1
6
.
[9
]
Y.
Ha
sh
im.
“
Tem
p
e
ra
tu
re
e
ffe
c
t
o
n
ON
/OF
F
c
u
rre
n
t
ra
ti
o
o
f
F
in
F
ET
tra
n
sisto
r
,
”
IEE
E
Re
g
io
n
a
l
S
y
mp
o
siu
m
o
n
M
icr
o
a
n
d
Na
n
o
e
lec
tro
n
ics
(RS
M
).
p
p
.
2
3
1
-
2
3
4
,
2
0
1
7
.
[1
0
]
A.
M
a
h
m
o
o
d
,
W.
Ja
b
b
a
r,
Y.
Ha
sh
im,
H.
M
a
n
a
p
,
“
E
lec
tri
c
a
l
Сh
a
ra
c
teriz
a
ti
o
n
o
f
G
e
-
F
in
F
ET
Tran
sisto
r
Ba
se
d
o
n
N
a
n
o
sc
a
le Ch
a
n
n
e
l
Dim
e
n
sio
n
s,”
J
o
u
rn
a
l
o
f
N
a
n
o
-
a
n
d
El
e
c
tro
n
ic
Ph
y
sic
s
,
v
o
l.
1
1
,
n
o
.
1
,
p
p
.
1
-
5
,
2
0
1
9
.
[1
1
]
V.
Be
n
d
re
a
n
d
A.
K.
Ku
re
sh
i,
"
A
n
Ov
e
rv
iew
o
f
Va
rio
u
s
Lea
k
a
g
e
P
o
we
r
Re
d
u
c
ti
o
n
Tec
h
n
iq
u
e
s
in
De
e
p
S
u
b
m
icro
n
Tec
h
n
o
l
o
g
ies
,
"
In
ter
n
a
ti
o
n
a
l
Co
n
fer
e
n
c
e
o
n
Co
m
p
u
t
in
g
Co
mm
u
n
ica
ti
o
n
C
o
n
tr
o
l
a
n
d
Au
t
o
ma
ti
o
n
,
p
p
.
9
9
2
-
9
9
8
,
2
0
1
5
.
[1
2
]
J.
Ch
u
a
n
c
h
e
n
g
,
Z.
Li
n
,
Y.
Hu
a
n
g
,
X.
Du
a
n
,
“
Na
n
o
wire
El
e
c
tro
n
ics
:
F
ro
m
Na
n
o
sc
a
le
to
M
a
c
ro
sc
a
le,”
Ch
e
mic
a
l
Rev
iews
,
v
o
l.
1
1
9
,
n
o
.
1
5
,
p
p
.
9
0
7
4
-
9
1
3
5
,
2
0
1
9
.
[1
3
]
C.
Ke
n
d
ric
k
,
M
.
K
u
o
,
J.
Li
,
H.
S
h
e
n
,
T.
S
.
M
a
y
e
r,
J.
M
.
Re
d
wi
n
g
,
“
Un
ifo
rm
p
-
t
y
p
e
d
o
p
i
n
g
o
f
sili
c
o
n
n
a
n
o
wire
s
sy
n
th
e
siz
e
d
v
ia v
a
p
o
r
-
li
q
u
id
-
so
li
d
g
ro
wt
h
wit
h
sili
c
o
n
tetra
c
h
l
o
rid
e
,
”
J
o
u
rn
a
l
o
f
Ap
p
li
e
d
Ph
y
sic
s
,
v
o
l
.
1
2
2
,
2
0
1
7
.
[1
4
]
W.
M
e
tafe
ria,
S
.
S
iv
a
k
u
m
a
r,
A.
R.
P
e
rss
o
n
,
I.
G
e
ij
se
lae
rs,
L.
R.
Wallen
b
e
rg
,
K.
De
p
p
e
rt,
L.
S
a
m
u
e
lso
n
,
M
.
H
.
M
a
g
n
u
ss
o
n
n
,
“
T
y
p
e
d
o
p
in
g
a
n
d
m
o
rp
h
o
lo
g
y
o
f
G
a
As
n
a
n
o
wire
s,”
Na
n
o
tec
h
n
o
lo
g
y
,
v
o
l
.
2
9
,
2
0
1
8
.
[1
5
]
G
.
V.
An
g
e
lo
v
,
D.
N.
Ni
k
o
l
o
v
,
M
.
H.
Hrist
o
v
,
“
Tec
h
n
o
l
o
g
y
a
n
d
M
o
d
e
li
n
g
o
f
No
n
c
las
sic
a
l
Tr
a
n
sisto
r
De
v
ice
s,”
J
o
u
rn
a
l
o
f
El
e
c
trica
l
a
n
d
C
o
mp
u
t
e
r E
n
g
i
n
e
e
rin
g
,
v
o
l.
2
0
1
9
,
p
p
.
1
-
1
8
,
2
0
1
9
.
[
1
6
]
D
.
T
r
a
n
,
T
.
P
h
a
m
,
B
.
W
o
l
f
r
u
m
,
A
.
O
f
f
e
n
h
ä
u
s
s
e
r
,
B
.
T
h
i
e
r
r
y
,
“
C
M
O
S
-
C
o
m
p
a
t
i
b
l
e
S
i
l
i
c
o
n
N
a
n
o
w
i
r
e
F
i
e
l
d
-
E
f
f
e
c
t
T
r
a
n
s
i
s
t
o
r
B
i
o
s
e
n
s
o
r
:
T
e
c
h
n
o
l
o
g
y
D
e
v
e
l
o
p
m
e
n
t
t
o
w
a
r
d
C
o
m
m
e
r
c
i
a
l
i
z
a
t
i
o
n
,
”
M
a
t
e
r
i
a
l
s
,
v
o
l
.
1
1
,
n
o
.
7
8
5
,
p
p
.
1
-
2
6
,
2
0
1
8
.
[1
7
]
H.
S
o
o
d
,
V.
S
r
iv
a
sta
v
a
,
G
.
S
in
g
h
,
“
Ad
v
a
n
c
e
d
M
OS
F
ET
Tec
h
n
o
l
o
g
ies
fo
r
Ne
x
t
G
e
n
e
ra
ti
o
n
Co
m
m
u
n
ica
ti
o
n
S
y
ste
m
s
-
P
e
rsp
e
c
ti
v
e
a
n
d
C
h
a
ll
e
n
g
e
s:
A
Re
v
iew
,
”
J
o
u
rn
a
l
o
f
En
g
i
n
e
e
rin
g
S
c
ien
c
e
a
n
d
T
e
c
h
n
o
l
o
g
y
Rev
iew
,
v
o
l.
1
1
,
n
o
.
3
,
p
p
.
1
8
0
-
1
9
5
,
2
0
1
8
.
[1
8
]
T.
Va
se
n
,
P
.
Ra
m
v
a
l,
A.
Afz
a
li
a
n
,
G
.
Do
o
r
n
b
o
s,
M
.
Ho
ll
a
n
d
,
C.
Th
e
lan
d
e
r,
K
.
A.
Dic
k
,
L.
-
E.
Wern
e
rss
o
n
,
M
.
P
a
ss
lac
k
,
“
Ve
rti
c
a
l
Ga
te
-
Al
l
-
Aro
u
n
d
Na
n
o
wire
G
a
S
b
-
In
As
Co
re
-
S
h
e
ll
n
-
Ty
p
e
Tu
n
n
e
l
F
E
Ts,
”
S
c
ien
ti
fi
c
RE
PORT
S
,
v
o
l.
9
,
n
o
.
2
0
2
,
p
p
.
1
-
9
,
2
0
1
9
.
[1
9
]
Ary
a
l
S
,
P
a
r
k
H,
Lea
ry
J
F
,
Ke
y
J.
“
To
p
-
d
o
w
n
fa
b
rica
ti
o
n
-
b
a
se
d
n
a
n
o
/mic
ro
p
a
rti
c
les
fo
r
m
o
lec
u
lar
ima
g
in
g
a
n
d
d
ru
g
d
e
li
v
e
ry
,
”
I
n
ter
n
a
ti
o
n
a
l
J
o
u
rn
a
l
o
f
N
a
n
o
me
d
icin
e
,
v
o
l.
1
4
,
p
p
.
6
6
3
1
-
6
6
4
4
,
2
0
1
9
.
[2
0
]
V.
A.
Ne
b
o
l’sin
,
N.
S
wa
ik
a
t,
A.
Y.
Vo
ro
b
’e
v
,
“
De
v
e
lo
p
m
e
n
t
o
f
G
ro
wth
Th
e
o
r
y
f
o
r
Va
p
o
r
–
Li
q
u
i
d
–
S
o
li
d
Na
n
o
wire
s:
Wetti
n
g
S
c
e
n
a
rio
,
F
r
o
n
t
C
u
rv
a
t
u
re
,
G
ro
wth
An
g
le,
Li
n
e
a
r
T
e
n
sio
n
,
a
n
d
Ra
d
ial
In
s
tab
i
l
it
y
,
”
J
o
u
rn
a
l
o
f
Na
n
o
tec
h
n
o
lo
g
y
,
v
o
l.
2
0
2
0
,
p
p
.
1
-
9
,
2
0
2
0
.
[2
1
]
F
.
L.
Ya
n
g
,
D.
H.
Lee
,
H.
Y
.
Ch
e
n
,
C.
Y.
C
h
a
n
g
,
S
.
D.
Li
u
,
a
n
d
C.
C.
Hu
a
n
g
,
“
5
n
m
g
a
te
n
a
n
o
wire
F
in
F
E
T,
”
VL
S
I
S
y
mp
.
T
e
c
h
.
Dig
.
p
p
.
1
9
6
–
1
9
7
,
2
0
0
4
.
[
2
2
]
L
.
R
i
s
c
h
,
L
.
D
r
e
e
k
o
r
n
f
e
l
d
,
J
.
H
a
r
t
w
i
c
h
,
F
.
H
o
f
m
a
n
n
,
J
.
K
r
e
t
z
,
a
n
d
M
.
S
t
a
d
e
l
e
.
“
M
u
l
t
i
g
a
t
e
t
r
a
n
s
i
s
t
o
r
s
a
n
d
m
e
m
o
r
y
c
e
l
l
s
f
o
r
f
u
t
u
r
e
C
M
O
S
g
e
n
e
r
a
t
i
o
n
,
”
D
i
g
e
s
t
o
f
T
e
c
h
n
i
c
a
l
P
a
p
e
r
s
.
2
0
0
4
S
y
m
p
o
s
i
u
m
o
n
V
L
S
I
T
e
c
h
n
o
l
o
g
y
,
p
p
.
1
–
2
,
2
0
0
4
.
[2
3
]
Z.
Li
,
Y.
C
h
e
n
,
X.
Li
,
T.
I.
Ka
m
i
n
s,
K.
Na
u
k
a
,
R
.
S
.
Wi
ll
iam
s.
“
S
e
q
u
e
n
c
e
-
sp
e
c
ifi
c
lab
e
l
-
fre
e
DN
A
se
n
so
rs
b
a
se
d
o
n
sil
ico
n
n
a
n
o
wire
s
,
”
Na
n
o
L
e
tt
e
rs
,
v
o
l
.
4
,
n
o
.
2
,
p
p
.
2
4
5
–
2
4
7
,
2
0
0
4
.
[2
4
]
X.
Du
a
n
,
C.
Niu
,
V
.
S
a
h
i
,
J.
Ch
e
n
,
J.
W
.
P
a
rc
e
,
S
.
Em
p
e
d
o
c
les
,
a
n
d
J.
L.
G
o
ld
m
a
n
.
“
Hig
h
-
p
e
rf
o
r
m
a
n
c
e
th
in
-
fil
m
tran
sisto
rs u
si
n
g
se
m
ico
n
d
u
c
to
r
n
a
n
o
wire
s a
n
d
n
a
n
o
rib
b
o
n
s,”
Na
t
u
re
,
v
o
l.
4
2
5
,
n
o
.
6
9
5
5
,
p
p
.
2
7
4
–
2
7
8
,
2
0
0
3
.
[2
5
]
Y.
Cu
i,
Q.
Wei,
H.
P
a
rk
,
a
n
d
C.
M
.
Li
e
b
e
r.
“
Na
n
o
wire
n
a
n
o
se
n
so
rs
fo
r
h
ig
h
ly
se
n
sit
iv
e
a
n
d
se
lec
ti
v
e
d
e
tec
ti
o
n
o
f
b
io
l
o
g
ica
l
a
n
d
c
h
e
m
ica
l
sp
e
c
ies
,
”
S
c
ien
c
e
,
v
o
l.
2
9
3
,
n
o
.
5
5
3
3
,
p
p
.
1
2
8
9
-
1
2
9
2
,
2
0
0
1
.
[2
6
]
H.
Li
n
,
M
.
Lee
,
C.
S
u
,
S
.
S
h
e
n
.
“
F
a
b
rica
ti
o
n
a
n
d
Ch
a
ra
c
teriz
a
ti
o
n
o
f
Na
n
o
wire
T
ra
n
sisto
rs
Wi
t
h
S
o
li
d
-
P
h
a
se
Cry
sta
ll
ize
d
P
o
ly
-
S
i
Ch
a
n
n
e
ls
,
”
I
EE
E
T
ra
n
sa
c
ti
o
n
s
o
n
El
e
c
tro
n
De
v
ice
s
,
v
o
l.
5
3
,
n
o
.
1
0
,
p
p
.
2
4
7
1
-
2
4
7
7
,
2
0
0
6
.
[2
7
]
R.
S
.
Wag
n
e
r
a
n
d
W.
C.
El
li
s.
“
Va
p
o
r
-
Li
q
u
id
-
S
o
li
d
M
e
c
h
a
n
is
m
o
f
S
in
g
le
Cry
sta
l
G
ro
wth
,
”
Ap
p
li
e
d
Ph
y
sic
s
L
e
tt
e
rs
,
v
o
l
.
4
,
n
o
.
5
,
p
p
.
8
9
-
9
0
,
1
9
6
4
.
[2
8
]
X.
B.
Ze
n
g
,
Y.
Y.
Xu
,
S
.
B
.
Z
h
a
n
g
,
Z.
H.
Hu
,
H.
W
.
Dia
o
,
Y
.
Q.
Wan
g
,
G
.
L.
Ko
n
g
,
X.
B.
Li
a
o
.
“
S
il
ico
n
n
a
n
o
wire
s g
ro
wn
o
n
a
p
re
-
a
n
n
e
a
led
S
i
su
b
stra
te,”
J
o
u
r
n
a
l
o
f
Cry
sta
l
Gr
o
wt
h
,
v
o
l
.
2
4
7
,
n
o
.
1
-
2
,
p
p
.
1
3
-
1
6
,
2
0
0
3
.
[2
9
]
J.
Wes
twa
ter,
D.
P
.
G
o
sa
in
,
S
.
To
m
iy
a
,
S
.
Us
u
i
,
H.
Ru
d
a
.
“
G
ro
wth
o
f
S
il
ico
n
Na
n
o
wire
s
Via
G
o
ld
/S
il
a
n
e
Va
p
o
r
-
Li
q
u
i
d
-
S
o
li
d
Re
a
c
ti
o
n
,
”
J
.
Va
c
.
S
c
i.
T
e
c
h
n
o
l.
,
v
o
l.
B1
5
,
n
o
.
3
,
p
p
.
5
5
4
-
5
5
7
,
1
9
9
7
.
[3
0
]
Y.
Cu
i,
L.
J
.
Lau
h
o
n
,
M
.
S
.
G
u
d
ik
se
n
,
J.
Wan
g
,
a
n
d
C
.
M
.
Li
e
b
e
r.
“
Dia
m
e
ter
-
Co
n
tro
ll
e
d
S
y
n
th
e
sis o
f
S
i
n
g
le Cry
sta
l
S
il
ico
n
Na
n
o
wire
s,”
A
p
p
li
e
d
P
h
y
sic
s L
e
tt
e
rs
,
v
o
l
.
7
8
,
p
p
.
2
2
1
4
-
2
2
1
6
,
2
0
0
1
.
[3
1
]
F
.
P
a
to
lsk
y
,
G
.
Zh
e
n
g
a
n
d
C.
M
.
Li
e
b
e
r.
“
F
a
b
r
i
c
a
ti
o
n
o
f
sil
ico
n
n
a
n
o
wire
d
e
v
ice
s
f
o
r
u
lt
ra
se
n
siti
v
e
,
lab
e
l
-
fre
e
,
re
a
l
-
ti
m
e
d
e
tec
ti
o
n
o
f
b
io
l
o
g
ica
l
a
n
d
c
h
e
m
ica
l
sp
e
c
ies
,
”
Na
tu
re
Pro
t
o
c
o
ls,
v
o
l.
1
,
p
p
.
1
7
1
1
-
1
7
2
4
,
2
0
0
6
.
[3
2
]
V.
S
c
h
m
id
t
,
J.
V
.
Wi
t
tem
a
n
n
a
n
d
U.
G
.
se
le.
“
G
ro
wth
,
Th
e
rm
o
d
y
n
a
m
ics
,
a
n
d
El
e
c
tri
c
a
l
P
r
o
p
e
rti
e
s
o
f
S
il
ico
n
Na
n
o
wire
s,”
Ch
e
mic
a
l
Rev
iews
,
v
o
l
.
1
1
0
,
n
o
.
1
,
p
p
.
3
6
1
–
3
8
8
,
2
0
1
0
.
[3
3
]
S
.
H
o
fm
a
n
n
,
C.
Du
c
a
ti
.
“
G
o
ld
-
c
a
taly
z
e
d
g
r
o
wth
o
f
sili
c
o
n
n
a
n
o
wire
s
b
y
p
las
m
a
e
n
h
a
n
c
e
d
c
h
e
m
ica
l
v
a
p
o
r
d
e
p
o
siti
o
n
,
”
J
o
u
r
n
a
l
o
f
Ap
p
li
e
d
P
h
y
sic
s
,
v
o
l
.
9
4
,
n
o
.
9
,
p
p
.
6
0
0
5
-
6
0
1
2
,
2
0
0
3
.
[3
4
]
D.
P
a
rlev
li
e
t,
J.
C.
Co
r
n
ish
.
“
P
u
lse
d
P
ECVD
fo
r
th
e
g
ro
wt
h
o
f
sili
c
o
n
n
a
n
o
wire
s
,
”
Pro
c
e
e
d
i
n
g
s
o
f
th
e
2
0
0
6
In
ter
n
a
t
io
n
a
l
C
o
n
fer
e
n
c
e
Na
n
o
sc
ien
c
e
a
n
d
Na
n
o
tec
h
n
o
l
o
g
y
(ICON
N'0
6
),
p
p
.
3
5
-
3
8
,
2
0
0
6
.
[
3
5
]
D
.
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9
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1
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2
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3
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4
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[4
5
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[4
6
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icro
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.
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,
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1
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p
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[4
7
]
C.
Ha
lt
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,
G
.
De
lap
ierre
,
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.
Co
sta
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T.
F
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rn
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Bu
c
k
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.
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ly
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De
S
a
lv
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T.
Ba
ro
n
,
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n
e
t,
“
To
p
-
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b
rica
ti
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F
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ll
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:
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ter
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ti
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ra
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le M
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Na
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ste
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fo
r P
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a
lt
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a
,
p
p
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1
-
4
,
2
0
0
8
.
[4
8
]
H.
W.
Yo
o
n
,
F
.
Re
g
o
n
d
a
,
S
.
F
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rn
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.
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E
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.
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.
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o
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Z
h
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m
in
g
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o
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ra
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t
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Co
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fer
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N
a
n
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tec
h
n
o
lo
g
y
,
2
0
0
8
.
[4
9
]
J.
M
a
rti
n
e
z
,
R.
V.
M
a
rtí
n
e
z
,
a
n
d
R.
G
a
rc
ia.
“
S
il
ico
n
Na
n
o
wir
e
Tran
sisto
rs
with
a
C
h
a
n
n
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l
Wi
d
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4
n
m
F
a
b
rica
ted
b
y
Ato
m
ic
F
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rc
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M
icr
o
sc
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p
e
Na
n
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li
th
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ra
p
h
y
,
”
Na
n
o
L
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tt
e
rs
,
v
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l
.
8
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o
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1
1
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p
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3
6
3
6
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6
3
9
,
2
0
0
8
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B
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RAP
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I
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S O
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AUTH
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RS
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sir
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1
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6
9
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B
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El
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En
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Un
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y
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M
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q
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in
1
9
9
1
a
n
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1
9
9
5
re
sp
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ti
v
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ly
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c
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P
h
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D.
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n
El
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tro
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c
s
En
g
i
n
e
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rin
g
-
M
icro
a
n
d
Na
n
o
-
e
lec
tro
n
ics
fr
o
m
Un
iv
e
rsiti
S
c
ien
c
e
M
a
lay
sia
(USM
),
P
e
n
a
n
g
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M
a
lay
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,
i
n
2
0
1
3
.
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is
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rre
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tl
y
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S
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o
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Lec
tu
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in
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F
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c
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lt
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g
in
e
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rin
g
,
Ti
s
h
k
In
tern
a
ti
o
n
a
l
Un
iv
e
rsity
,
Erb
il
-
Ku
r
d
sta
n
,
Ira
q
.
His
re
se
a
rc
h
in
tere
sts
in
c
lu
d
e
M
icro
e
lec
tr
o
n
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n
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sist
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