T
E
L
KO
M
NIK
A
, V
ol
.
1
7
,
No.
5
,
O
c
tob
er
201
9
, p
p.
2
47
5
~
2480
IS
S
N: 1
69
3
-
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93
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,
accr
ed
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F
irst
Gr
ad
e b
y K
em
en
r
istekdikti,
Decr
ee
No: 2
1/E/
K
P
T
/20
18
DOI:
10.12928/TE
LK
OM
N
IK
A
.v
1
7
i
5
.
11798
◼
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y
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a
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e
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o
rg
Ab
strac
t
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i
s
p
a
p
e
r
p
re
s
e
n
ts
th
e
te
m
p
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ra
tu
re
-
g
a
te
o
x
i
d
e
th
i
c
k
n
e
s
s
c
h
a
ra
c
te
ri
s
ti
c
s
o
f
a
fi
n
fi
e
l
d
-
e
ff
e
c
t
tra
n
s
i
s
t
o
r
(F
i
n
FET
)
a
n
d
d
i
s
c
u
s
s
e
s
th
e
p
o
s
s
i
b
i
l
i
t
y
o
f
u
s
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g
s
u
c
h
a
tra
n
s
i
s
to
r
a
s
a
te
m
p
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r
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tu
re
n
a
n
o
-
s
e
n
s
o
r
.
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e
i
n
v
e
s
ti
g
a
t
i
o
n
o
f
c
h
a
n
n
e
l
o
x
i
d
e
th
i
c
k
n
e
s
s
–
b
a
s
e
d
te
m
p
e
ra
tu
re
c
h
a
r
a
c
t
e
ri
s
ti
c
s
i
s
u
s
e
f
u
l
to
o
p
t
i
m
i
z
e
d
e
l
e
c
tri
c
a
l
a
n
d
t
e
m
p
e
ra
tu
r
e
c
h
a
ra
c
te
r
i
s
t
i
c
s
o
f
F
i
n
FET
.
Curre
n
t
–
v
o
l
t
a
g
e
c
h
a
r
a
c
t
e
ri
s
ti
c
s
wit
h
d
i
ff
e
re
n
t
te
m
p
e
ra
tu
r
e
s
a
n
d
g
a
t
e
o
x
i
d
e
th
i
c
k
n
e
s
s
v
a
l
u
e
s
(T
ox
=
1
,
2
,
3
,
4
,
a
n
d
5
n
m
)
a
re
i
n
i
ti
a
l
l
y
s
i
m
u
l
a
t
e
d
,
a
n
d
th
e
d
i
o
d
e
m
o
d
e
c
o
n
n
e
c
ti
o
n
i
s
c
o
n
s
i
d
e
re
d
t
o
m
e
a
s
u
re
Fi
n
F
ET
’
s
te
m
p
e
ra
tu
r
e
s
e
n
s
i
ti
v
i
t
y
.
Fi
n
d
i
n
g
th
e
b
e
s
t
te
m
p
e
ra
tu
r
e
s
e
n
s
i
ti
v
i
ty
o
f
Fi
n
FET
i
s
b
a
s
e
d
o
n
th
e
l
a
rg
e
s
t
c
h
a
n
g
e
i
n
c
u
rre
n
t
(∆I
)
wit
h
i
n
a
work
i
n
g
v
o
l
ta
g
e
ra
n
g
e
o
f
0
–
5
V.
Ac
c
o
rd
i
n
g
t
o
t
h
e
re
s
u
l
ts
,
th
e
t
e
m
p
e
r
a
tu
re
s
e
n
s
i
t
i
v
i
ty
o
f
F
i
n
FET
i
n
c
re
a
s
e
s
l
i
n
e
a
rl
y
wi
th
o
x
i
d
e
th
i
c
k
n
e
s
s
w
i
th
i
n
t
h
e
r
a
n
g
e
o
f
1
–
5
n
m
,
fu
rt
h
e
rm
o
re
,
t
h
e
t
h
r
e
s
h
o
l
d
v
o
l
t
a
g
e
a
n
d
d
r
a
i
n
-
i
n
d
u
c
e
d
b
a
rri
e
r
l
o
weri
n
g
i
n
c
re
a
s
e
wi
th
i
n
c
re
a
s
i
n
g
o
x
i
d
e
th
i
c
k
n
e
s
s
.
Al
s
o
,
t
h
e
s
u
b
th
re
s
h
o
l
d
s
w
i
n
g
(SS)
i
s
c
l
o
s
e
t
o
th
e
i
d
e
a
l
v
a
l
u
e
a
t
th
e
m
i
n
i
m
u
m
o
x
i
d
e
th
i
c
k
n
e
s
s
(1
n
m
)
th
e
n
i
n
c
re
a
s
e
s
a
n
d
d
i
v
e
r
g
e
s
wit
h
i
n
c
re
a
s
i
n
g
o
x
i
d
e
th
i
c
k
n
e
s
s
.
So
,
th
e
b
e
s
t
o
x
i
d
e
th
i
c
k
n
e
s
s
(n
e
a
r
e
s
t
SS
v
a
l
u
e
to
th
e
i
d
e
a
l
o
n
e
)
o
f
F
i
n
FET
u
n
d
e
r
th
e
c
o
n
d
i
t
i
o
n
s
d
e
s
c
ri
b
e
d
i
n
th
i
s
r
e
s
e
a
rc
h
i
s
1
n
m
.
Key
w
ords
:
Fi
n
FET
,
nano
-
s
e
n
s
o
r,
o
x
i
d
e
t
h
i
c
k
n
e
s
s
,
t
e
m
p
e
ra
t
u
re
Copy
righ
t
©
2
0
1
9
Uni
v
e
rsi
t
a
s
Ahm
a
d
D
a
hl
a
n.
All
rig
ht
s
r
e
s
e
rve
d
.
1.
Int
r
o
d
u
ctio
n
Ma
n
y
ne
w
f
i
e
l
d
-
ef
f
ec
t
tr
an
s
i
s
tor
(
F
E
T
)
s
tr
uc
tures
ha
v
e
be
en
ex
t
en
s
i
v
e
l
y
ex
p
l
ore
d
[1
-
6]
be
c
au
s
e
m
eta
l
ox
i
de
s
em
i
c
on
du
c
t
or
F
E
T
(
MO
S
F
E
T
)
tec
hn
o
l
og
y
i
s
ap
pr
oa
c
hi
ng
i
t
s
do
w
ns
c
al
i
ng
l
i
m
i
ts
.
O
ne
of
the
r
el
a
ti
v
e
l
y
ne
w
F
E
T
s
i
s
the
f
i
n
f
i
el
d
-
ef
f
ec
t
tr
an
s
i
s
tor
(
F
i
nF
E
T
)
as
s
ho
w
n
F
i
gu
r
e
1
[
7
],
a
tr
an
s
i
s
tor
-
s
tr
uc
tured
F
E
T
tha
t
i
s
a
po
pu
l
ar
r
es
e
arc
h
s
ub
j
ec
t
i
n
th
e
ac
a
de
m
e
an
d
s
e
m
i
c
on
du
c
tor
i
nd
us
tr
y
[
8
-
10
].
T
he
i
de
al
ex
am
pl
e
of
s
en
s
ors
f
or
s
ub
s
um
ed
el
ec
tr
on
i
c
ap
p
l
i
c
at
i
on
s
(
i
.e.
,
us
ed
w
i
t
hi
n
eq
ui
pm
en
t)
i
s
t
he
s
e
m
i
c
on
du
c
tor
tem
pe
r
atu
r
e
s
en
s
or
[
11
-
15
].
T
r
an
s
i
s
tor
-
ba
s
ed
te
m
pe
r
at
ure s
en
s
ors
are
de
s
i
gn
ed
b
as
ed
o
n t
he
t
em
pe
r
atu
r
e c
h
arac
teri
s
ti
c
s
of
the
c
urr
en
t
–
v
ol
tag
e
(
I
–
V
)
c
urv
es
of
F
i
nF
E
T
tr
an
s
i
s
t
ors
[
16
-
20
].
A
b
i
p
ol
ar
tr
a
ns
i
s
tor
c
an
be
uti
l
i
z
ed
as
a
t
em
pe
r
atu
r
e
s
en
s
or
b
y
c
o
nn
ec
t
i
ng
i
ts
b
as
e
a
nd
c
o
l
l
ec
t
or
an
d
o
pe
r
ati
ng
th
em
i
n
di
o
de
m
od
e.
S
i
m
i
l
arl
y
,
a
tr
an
s
i
s
tor
wi
t
h
a
MO
S
F
E
T
s
tr
uc
ture
c
an
be
us
e
d
as
a
tem
pe
r
atu
r
e
s
en
s
or
b
y
c
on
n
ec
ti
n
g
ox
i
de
thi
c
k
ne
s
s
to
ei
the
r
th
e
s
ou
r
c
e
or
drai
n
as
s
ho
wn
i
n
F
i
g
ure
2.
E
l
ec
tr
o
ni
c
d
ev
i
c
es
w
i
t
h
n
an
o
-
di
m
en
s
i
on
s
,
s
uc
h
as
d
i
o
d
es
,
tr
an
s
i
s
tors
,
c
ap
ac
i
tors
,
an
d
r
es
i
s
t
ors
,
ha
v
e
r
ec
e
ntl
y
be
c
om
e
p
op
u
l
ar
i
n
the
e
l
ec
tr
on
i
c
s
i
n
du
s
tr
y
du
e
t
o
t
he
i
r
e
x
tr
e
m
el
y
s
m
al
l
el
ec
tr
on
i
c
c
i
r
c
ui
ts
.
T
he
pe
r
f
or
m
an
c
e
of
ne
w
d
ev
i
c
es
,
w
h
i
c
h
m
a
y
c
orr
es
p
on
d
t
o
v
ario
us
ne
w
ap
pl
i
c
ati
o
ns
,
c
o
m
m
on
l
y
de
pe
n
ds
on
t
h
e
na
no
-
d
i
m
en
s
i
on
a
l
c
ha
r
ac
teri
s
ti
c
s
of
s
uc
h
de
v
i
c
es
.
T
he
c
hi
p
ge
ne
r
ati
on
of
the
s
e
r
el
ati
v
el
y
ne
w
an
d
p
o
w
erf
ul
e
l
ec
tr
on
i
c
d
ev
i
c
es
w
i
t
h
u
l
tr
a
-
s
m
al
l
tr
an
s
i
s
tors
m
ay
e
v
e
n
be
r
eg
ard
ed
as
tr
us
t
w
orth
y
i
f
n
e
w
f
i
n
di
ng
s
f
r
o
m
f
utu
r
e
r
es
ea
r
c
h
are
c
on
s
ol
i
d
ate
d.
Ho
w
e
v
er,
n
e
w
n
an
o
-
di
m
en
s
i
on
a
l
F
E
T
de
s
i
gn
s
an
d
s
t
r
uc
tures
are
s
ti
l
l
no
v
el
tec
hn
o
l
og
i
es
a
nd
thu
s
ne
c
es
s
i
tat
e
ad
di
t
i
on
al
s
tud
i
es
an
d
i
m
prov
em
en
ts
.
Mo
r
eo
v
er,
the
y
r
eq
u
i
r
e
f
urther
i
nn
ov
ati
on
s
de
s
p
i
t
e t
h
e l
i
m
i
tat
i
on
s
i
n M
O
S
F
E
T
s
c
i
en
c
e
.
E
l
ec
tr
o
ni
c
de
v
i
c
e
s
i
m
ul
ati
on
ha
s
b
ec
om
e
i
nc
r
ea
s
i
ng
l
y
i
m
po
r
tan
t
i
n
un
de
r
s
t
an
d
i
ng
the
ph
y
s
i
c
s
b
eh
i
nd
th
e
s
tr
uc
tures
of
n
e
w
de
v
i
c
es
.
T
hu
s
,
s
i
m
ul
at
i
on
to
ol
s
wer
e
ad
op
ted
i
n
t
hi
s
r
es
ea
r
c
h
f
or
the
an
al
y
s
i
s
an
d
ev
al
ua
t
i
on
of
the
p
erf
or
m
an
c
e
l
i
m
i
ts
of
F
i
nFET
s
tr
uc
tures
.
E
x
pe
r
i
m
en
tal
wor
k
c
an
be
s
up
po
r
te
d
b
y
s
i
m
ul
at
i
on
t
o
ol
s
to
ex
pl
ore
f
urther
the
d
ev
e
l
o
pm
en
t
o
f
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
5
,
O
c
tob
er
20
19
:
24
7
5
-
24
80
2476
m
ul
ti
pl
e
-
g
ate
f
i
e
l
d
-
ef
f
ec
t
tr
an
s
i
s
tors
(
Mu
G
F
E
T
s
)
f
or
na
no
-
di
m
en
s
i
on
a
l
c
h
arac
teri
z
ati
on
[
21
].
S
i
m
ul
ati
on
to
ol
s
c
a
n
al
s
o
he
l
p
i
de
nti
f
y
d
ev
i
c
e
s
tr
e
ng
t
hs
,
w
e
ak
ne
s
s
es
,
an
d
r
etre
nc
hm
en
t
c
os
ts
an
d
i
l
l
us
tr
at
e t
h
e
ex
te
ns
i
b
i
l
i
t
y
of
th
es
e d
e
v
i
c
es
i
n
the
n
m
r
an
ge
[
2
2,
2
3
].
F
i
gu
r
e
1.
F
i
nFET
s
tr
uc
ture [
7]
F
i
gu
r
e
2.
MO
S
F
E
T
as
a
tem
pe
r
atu
r
e s
en
s
or
(
V
g
=
V
d=
V
DD
)
2.
Re
sult
s a
n
d
D
isc
u
s
sio
n
In
th
i
s
r
es
ea
r
c
h,
Mu
G
F
E
T
w
as
u
ti
l
i
z
ed
as
th
e
s
i
m
ul
ati
on
too
l
t
o
i
nv
e
s
ti
ga
t
e
the
c
h
arac
teri
s
t
i
c
s
of
F
i
nF
E
T
.
T
he
ou
tp
ut
c
h
arac
teri
s
ti
c
c
urv
es
of
the
tr
a
ns
i
s
tor
un
de
r
di
f
f
erent
c
on
di
t
i
o
ns
an
d
pa
r
am
ete
r
s
w
ere
c
o
ns
i
de
r
ed
.
T
he
e
ff
ec
ts
of
v
ar
y
i
ng
t
em
pe
r
atu
r
e
an
d
ox
i
d
e
thi
c
k
ne
s
s
v
al
ue
s
o
n
F
i
nFE
T
w
ere
de
t
erm
i
ne
d
ba
s
e
d
on
the
I
–
V
c
h
arac
teri
s
ti
c
s
de
r
i
v
e
d
f
r
o
m
the
s
i
m
ul
at
i
on
.
T
he
Mu
G
F
E
T
[24
,
2
5
]
s
i
m
ul
at
i
on
to
o
l
us
e
d
f
or
F
E
T
wi
t
h
a
n
an
o
-
di
m
en
s
i
on
a
l
s
tr
uc
ture
w
as
de
v
e
l
o
pe
d
an
d d
es
i
gn
e
d b
y
P
urd
ue
U
ni
v
ers
i
t
y
.
Mu
G
F
E
T
ad
o
pts
e
i
the
r
P
A
DR
E
or
P
RO
P
HE
T
f
or
s
i
m
ul
ati
on
,
bo
t
h
of
w
h
i
c
h
wer
e
de
v
el
op
e
d
b
y
B
e
l
l
La
b
orato
r
i
es
.
T
he
P
RO
P
H
E
T
i
s
a
pa
r
ti
a
l
di
f
f
erenti
a
l
e
qu
at
i
o
n
p
r
of
i
l
er
f
or
on
e,
two,
or
t
hree
di
m
en
s
i
on
s
,
a
nd
P
A
DRE
i
s
a
de
v
i
c
e
-
orie
nte
d
s
i
m
ul
ato
r
f
or
2D
or
3
D
de
v
i
c
e
s
wi
th
arbi
tr
ar
y
ge
om
etr
y
[2
4,
2
5
].
T
he
s
of
tw
are
c
an
g
en
er
ate
us
ef
ul
c
ha
r
ac
teri
s
ti
c
F
E
T
c
urv
es
f
o
r
en
g
i
ne
ers
to
he
l
p
th
em
f
ul
l
y
ex
p
l
a
i
n
th
e
un
de
r
l
y
i
ng
p
h
y
s
i
c
s
of
F
E
T
s
.
Mu
G
F
E
T
al
s
o
pro
v
i
de
s
s
el
f
-
c
on
s
i
s
ten
t
s
ol
uti
on
s
to
P
o
i
s
s
on
an
d
drif
t
-
di
f
f
us
i
on
eq
ua
ti
on
s
[24
,
25
]
an
d
c
an
be
us
ed
to
s
i
m
ul
ate
th
e
m
oti
on
of
tr
a
ns
po
r
t
ob
j
ec
ts
w
h
en
c
al
c
u
l
at
i
ng
F
i
nF
E
T
c
ha
r
ac
teri
s
t
i
c
s
as
s
ho
w
n
i
n
F
i
gu
r
e
1 [
2
5
].
In
th
i
s
r
es
ea
r
c
h,
th
e
Id
–
V
g
c
ha
r
ac
teri
s
ti
c
s
of
F
i
nF
E
T
at
di
f
f
erent
tem
pe
r
atu
r
es
o
f
25
0,
27
5,
30
0,
32
5
,
3
50
,
37
5,
an
d
40
0
K
wer
e
s
i
m
ul
at
e
d
wi
th
the
f
ol
l
o
w
i
ng
pa
r
a
m
ete
r
s
:
c
ha
nn
el
wi
dt
h
=
40
nm
,
c
ha
nn
e
l
c
on
c
en
tr
at
i
on
(
P
-
t
y
p
e)
=
1
0
16
cm
−3
,
s
ou
r
c
e
an
d
drai
n
l
e
n
gth
s
=
50
nm
,
s
ou
r
c
e
an
d
dra
i
n
c
on
c
e
ntr
ati
o
ns
(
N
-
t
y
pe
)
=
1
0
19
cm
−3
,
an
d
c
ha
n
ne
l
l
e
ng
t
h=
85
n
m
.
T
he
ox
i
de
thi
c
k
ne
s
s
v
al
ue
s
wer
e
T
ox
=
1,
2,
3,
4
,
an
d
5
nm
. T
he
c
ha
ng
e
i
n
c
urr
e
nt
(
∆
I)
h
av
e
be
en
c
a
l
c
ul
ate
d
when
the
tem
pe
r
atu
r
e
i
nc
r
e
as
ed
i
n
t
he
V
DD
r
an
g
e
of
0
–
5
V
at
0.2
5
V
s
tep
s
f
or
T
ox
v
a
l
ue
s
of
1,
2,
3,
4,
an
d
5
nm
. T
he
∆
I
was
c
al
c
ul
a
ted
de
p
en
di
n
g o
n t
h
e rel
a
ti
o
n:
∆
(
+
1
,
)
=
(
+
1
,
)
−
(
,
)
(
1)
the
m
a
x
i
m
u
m
s
e
n
s
i
t
i
v
i
t
i
e
s
(
w
i
t
h
m
a
x
∆
I
)
b
e
c
a
m
e
e
v
i
d
e
n
t
t
o
r
e
l
a
t
i
v
e
l
y
l
o
w
t
e
m
p
e
r
a
t
u
r
e
s
,
a
n
d
t
h
e
v
a
l
u
e
s
d
e
c
r
e
a
s
e
d
l
i
n
e
a
r
l
y
a
s
t
e
m
p
e
r
a
t
u
r
e
i
n
c
r
e
a
s
e
d
f
o
r
a
l
l
V
DD
.
T
h
e
c
a
l
c
u
l
a
t
i
o
n
s
o
f
∆
I
s
h
o
w
t
h
a
t
t
h
e
m
a
x
i
m
u
m
t
e
m
p
e
r
a
t
u
r
e
s
e
n
s
i
t
i
v
i
t
y
v
a
l
u
e
s
a
t
V
DD
=
2
V
(
w
i
t
h
T
ox
=
1
n
m
)
,
V
DD
=
2
.
7
5
V
(
w
i
t
h
T
ox
=
2
n
m
)
,
V
DD
=
3
.
7
5
V
(
w
i
t
h
T
ox
=
3
n
m
)
a
n
d
V
DD
=
4
.
7
5
V
(
w
i
t
h
T
ox
=
4
n
m
)
,
and V
DD
=
5
V
(
w
i
t
h
T
ox
=
5
n
m
)
.
F
i
gu
r
e
3
pres
e
nts
t
he
op
t
i
m
i
z
e
d
op
er
ati
ng
v
ol
t
ag
e
V
DD(opt)
b
as
ed
on
th
e
m
ax
i
m
u
m
tem
pe
r
atu
r
e
s
en
s
i
t
i
v
i
t
y
a
nd
ox
i
de
t
hi
c
k
ne
s
s
,
i
n
whi
c
h
t
he
op
t
i
m
i
z
e
d
V
DD
i
s
r
el
a
ted
to
the
tem
pe
r
atu
r
e
s
e
ns
i
ti
v
i
t
y
pe
ak
s
.
T
e
m
pe
r
atu
r
e
s
en
s
i
ti
v
i
t
y
i
nc
r
ea
s
e
d
r
em
ark
a
bl
y
u
nti
l
ox
i
d
e
thi
c
k
ne
s
s
r
ea
c
he
d
4
nm
the
n
i
nc
r
ea
s
e
d
on
l
y
s
l
i
g
htl
y
f
r
om
4
to
5
nm
.
Henc
e,
a
l
i
n
e
arl
y
i
nc
r
ea
s
i
ng
r
el
at
i
on
s
h
i
p
w
as
ob
s
er
v
e
d
b
et
w
e
en
tem
pe
r
atu
r
e
s
en
s
i
ti
v
i
t
y
an
d
ox
i
de
th
i
c
k
ne
s
s
up
t
o
ab
ou
t
5
nm
.
F
i
gu
r
e
4
pres
en
ts
t
he
thres
ho
l
d
v
ol
t
ag
e
(
V
T
)
,
s
ub
thres
ho
l
d
s
wi
ng
(
S
S
)
,
an
d
drai
n
-
i
nd
uc
ed
ba
r
r
i
er
l
o
wer
i
ng
(
DIB
L)
of
F
i
nF
E
T
.
T
he
s
e
tem
pe
r
atu
r
e
c
ha
r
a
c
teri
s
ti
c
s
w
ere
ob
ta
i
ne
d
at
T
=
25
0,
2
75
,
3
0
0,
32
5,
3
50
,
3
75
,
a
nd
40
0
K
at
T
ox
=1
nm
.
A
s
pres
en
ted
i
n
th
i
s
f
i
gu
r
e,
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KO
M
NIK
A
IS
S
N: 1
69
3
-
6
93
0
◼
A
te
mp
era
ture c
h
arac
teri
z
a
ti
on
of
(
S
i
-
F
i
nFET)
b
as
ed
o
n c
ha
n
ne
l
ox
i
d
e t
h
i
c
k
ne
s
s
(
Y
ou
s
i
f A
tal
l
a)
2477
V
T
de
c
r
ea
s
e
d
l
i
ne
ar
l
y
wi
th
i
nc
r
ea
s
i
ng
t
em
pe
r
atu
r
e,
s
uc
h
tha
t
V
T
=
0
.48
V
at
a
l
o
w
t
em
pe
r
atu
r
e
of
25
0
K
an
d
V
T
=
0.4
4
V
a
t
a
hi
g
h
t
em
pe
r
atu
r
e
of
40
0
K
.
S
S
b
eg
a
n
at
56
.6
3
m
V
/de
c
at
t
he
l
o
wes
t
tem
pe
r
atu
r
e
(
the
n
ea
r
es
t
v
al
u
e
t
o
t
h
e
i
d
ea
l
S
S
at
4
9.
6
m
V
/de
c
)
at
25
0
K
an
d
i
n
c
r
ea
s
ed
u
nti
l
i
t
r
ea
c
he
d
94
.
88
m
V
/de
c
(
th
e
f
arthes
t
v
al
ue
f
r
om
the
i
de
a
l
S
S
at
7
9.4
m
V
/de
c
)
at
40
0
K
.
DI
B
L
i
nc
r
ea
s
ed
as
tem
pe
r
atu
r
e
i
nc
r
ea
s
ed
.
F
i
gu
r
e
5
pres
en
ts
the
V
T
,
S
S
,
an
d
DI
B
L
of
F
i
nFET
.
T
he
s
e
tem
pe
r
atu
r
e
c
h
arac
t
eris
ti
c
s
w
ere
ob
tai
ne
d
at
T
=
25
0,
27
5,
3
00
,
32
5,
3
50
,
37
5,
an
d
4
00
K
at
T
ox
=
2
nm
.
V
T
de
c
r
ea
s
e
d
l
i
ne
ar
l
y
wi
t
h
i
nc
r
ea
s
i
ng
t
em
pe
r
atu
r
e.
Henc
e,
V
T
=
0.
49
V
at
a
l
o
w
tem
pe
r
atu
r
e
of
25
0
K
a
nd
V
T
=
0.4
5
V
at
a
h
i
gh
tem
pe
r
atu
r
e
of
40
0
K
.
S
S
be
g
an
at
60
.1
2
m
V
/de
c
at
the
l
o
wes
t
tem
pe
r
atu
r
e
(
the
n
ea
r
es
t
v
a
l
ue
t
o
the
i
d
ea
l
S
S
at
4
9
.6
m
V
/de
c
)
at
25
0
K
an
d
i
nc
r
ea
s
e
d
un
t
i
l
i
t
r
ea
c
he
d
10
2.3
4
m
V
/de
c
(
the
f
arthes
t
v
a
l
ue
f
r
om
th
e
i
de
al
S
S
a
t
79
.4
m
V
/de
c
)
at
40
0 K
.
DIB
L i
nc
r
ea
s
ed
as
t
em
pe
r
atu
r
e
i
nc
r
ea
s
e
d.
F
i
gu
r
e
3.
O
pt
i
m
i
z
ed
op
era
ti
ng
v
ol
tag
e V
DD
w
i
th
d
i
f
f
erent o
x
i
d
e t
h
i
c
k
ne
s
s
v
al
ue
s
on
the
b
as
i
s
of
t
he
be
s
t t
em
pe
r
atu
r
e s
en
s
i
ti
v
i
t
y
F
i
gu
r
e
4.
V
T
,
S
S
,
an
d DI
B
L
at
T
ox
=
1
nm
F
i
gu
r
e
6
i
l
l
us
tr
ate
s
th
e
V
T
,
DIB
L,
an
d
S
S
[
c
h
arac
teri
s
ti
c
s
of
the
F
i
nFET
at
T
=
25
0,
27
5,
30
0,
32
5
,
35
0,
37
5,
an
d
4
00
K
at
T
ox
=
3
nm
.
T
e
m
pe
r
atu
r
e
i
nc
r
ea
s
ed
w
i
th
ox
i
de
thi
c
k
ne
s
s
.
T
hi
s
l
i
n
ea
r
r
e
l
at
i
o
ns
hi
p
i
m
pl
i
es
t
ha
t
f
at
r
ed
uc
es
f
er
m
en
tat
i
o
n
f
r
om
25
0
K
to
40
0
K
.
He
nc
e,
a
t
2
50
K
an
d
40
0
K
,
V
T
=
0.4
9
a
nd
0.4
5
V
,
S
S
=
6
3.9
5
a
nd
11
0.
90
m
m
/de
c
,
an
d
DI
B
L
=
5
4.7
3
a
nd
60
.2
3
m
m
/V
,
r
es
pe
c
ti
v
e
l
y
.
In
a
dd
i
ti
on
,
whe
n
tem
pe
r
atu
r
e
i
nc
r
e
as
ed
to
40
0
K
,
SS
=
6
3.9
5
m
m
/de
c
,
w
h
i
c
h
ap
pro
ac
he
d
t
he
i
de
al
S
S
=
49
.6
m
m
/de
c
.
F
i
gu
r
e
7
pres
en
ts
the
c
ha
n
ge
s
i
n
V
T
,
S
S
,
a
nd
DI
B
L
an
d
t
he
i
r
ef
f
ec
ts
on
F
i
nFET
pro
pe
r
ti
es
when
te
m
pe
r
atu
r
e
w
as
i
nc
r
ea
s
ed
f
r
om
25
0
K
to
4
0
0
K
at
T
ox
=
4
nm
.
V
T
de
c
r
ea
s
ed
l
i
ne
ar
l
y
wi
t
h
i
nc
r
e
as
i
ng
tem
pe
r
atu
r
e.
Henc
e,
f
or
25
0
K
a
nd
4
00
K
,
V
T
=
0.4
9
an
d
0
.45
V
,
S
S
=
69
.
20
an
d
12
0
.44
m
V
/de
c
,
an
d
DIB
L
=
1
03
.0
6
a
nd
79
.
4
m
V
/V
,
r
es
p
ec
ti
v
e
l
y
.
T
he
f
i
gu
r
e
al
s
o
i
l
l
us
tr
at
es
th
at
t
he
o
bta
i
ne
d
v
al
ue
,
SS
=
6
9.2
0
m
V
/de
c
, i
s
c
l
os
e
to
th
e i
de
a
l
S
S
=
4
9.6
m
V
/d
ec
at
4
00
K
.
F
i
gu
r
e
8
s
ho
w
s
th
e
c
ha
n
g
e
i
n
V
T
,
S
S
,
an
d
DI
B
L
a
nd
the
i
r
ef
f
ec
t
on
F
i
nFET
properti
es
when
te
m
pe
r
a
ture
w
as
i
nc
r
ea
s
ed
f
r
o
m
25
0
K
t
o
40
0
K
at T
ox
=
5
nm
. V
T
,
S
S
, a
nd
DI
B
L
de
c
r
ea
s
e
d
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
5
,
O
c
tob
er
20
19
:
24
7
5
-
24
80
2478
wi
th
i
nc
r
ea
s
i
ng
t
em
pe
r
atu
r
e.
T
hi
s
f
i
gu
r
e
pa
r
t
i
c
ul
ar
l
y
pres
en
ts
th
e
l
i
m
i
ts
of
the
de
c
r
ea
s
e
f
r
o
m
25
0
K
t
o
40
0
K
.
Henc
e
,
f
or
25
0
K
an
d
40
0
K
,
V
T
=
0
.50
a
nd
0.
46
V
,
S
S
=
72
.4
3
an
d
130
.
91
m
V
/de
c
,
a
nd
DIB
L
=
13
9.5
2
an
d
9
7.1
1
m
V
/V
,
r
es
pe
c
ti
v
el
y
.
B
y
c
on
tr
as
t,
t
he
S
S
v
a
l
u
es
de
c
r
ea
s
ed
wi
th
i
nc
r
ea
s
i
n
g
tem
pe
r
atu
r
e
u
nti
l
the
y
ap
pro
ac
he
d
th
e
i
d
ea
l
v
a
l
ue
s
.
F
i
gu
r
e
9
pres
en
ts
the
pro
pe
r
t
i
es
of
V
T
,
S
S
,
an
d
DIB
L
wi
t
h
i
nc
r
ea
s
i
ng
ox
i
de
t
hi
c
k
ne
s
s
of
F
i
nFE
T
a
t
T
=
30
0
K
,
w
i
t
h
1
–
5
nm
at
1
nm
s
tep
s
,
V
T
i
nc
r
ea
s
ed
h
y
p
erbol
i
c
al
l
y
,
DI
B
L
i
nc
r
ea
s
ed
ex
po
ne
nti
al
l
y
,
an
d
S
S
i
nc
r
ea
s
e
d
l
i
ne
ar
l
y
wi
th
i
nc
r
ea
s
i
n
g
ox
i
de
th
i
c
k
ne
s
s
.
S
S
was
c
l
os
e
t
o
t
he
i
d
ea
l
v
a
l
ue
at
1
nm
,
be
y
o
nd
w
h
i
c
h
i
t
i
nc
r
e
as
ed
wi
t
h
i
nc
r
ea
s
i
ng
ox
i
de
thi
c
k
ne
s
s
.
S
o,
ac
c
ord
i
ng
to
the
s
e
r
es
u
l
ts
,
the
b
es
t o
x
i
de
t
hi
c
k
ne
s
s
of
F
i
nFET
un
d
er the
c
on
d
i
t
i
on
s
de
s
c
r
i
be
d
i
n
thi
s
r
es
e
arc
h i
s
1
nm
.
F
i
gu
r
e
5.
V
T
,
S
S
,
an
d DI
B
L
at
T
ox
=
2
nm
F
i
gu
r
e
6.
V
T
,
S
S
,
an
d DI
B
L
at
T
ox
=
3
nm
F
i
gu
r
e
7.
V
T
,
S
S
,
an
d
DI
B
L
at
T
ox
=
4
nm
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KO
M
NIK
A
IS
S
N: 1
69
3
-
6
93
0
◼
A
te
mp
era
ture c
h
arac
teri
z
a
ti
on
of
(
S
i
-
F
i
nFET)
b
as
ed
o
n c
ha
n
ne
l
ox
i
d
e t
h
i
c
k
ne
s
s
(
Y
ou
s
i
f A
tal
l
a)
2479
F
i
gu
r
e
8.
V
T
,
S
S
,
an
d DI
B
L
at
T
ox
=
5
nm
F
i
gu
r
e
9.
V
T
, S
S
,
an
d
DIB
L
c
ha
r
ac
teri
s
ti
c
s
T
ox
3
.
Co
n
clus
ion
T
he
ef
f
ec
ts
of
w
ork
i
ng
t
e
m
pe
r
atu
r
es
(
25
0,
27
5,
30
0,
3
25
,
3
50
,
37
5,
an
d
4
0
0
K
)
on
F
i
nFET
c
ha
r
ac
teri
s
t
i
c
s
wer
e
s
tud
i
e
d
b
y
c
o
ns
i
d
erin
g
di
f
f
erent
ox
i
de
th
i
c
k
ne
s
s
v
a
l
u
es
(T
ox
=
1,
2,
3,
4,
a
nd
5
nm
)
.
A
c
c
ordi
n
g
to
th
e
r
es
ul
ts
of
op
ti
m
i
z
ed
o
pe
r
at
i
ng
v
o
l
t
ag
e
V
DD
wi
t
h
r
es
pe
c
t
to
th
e
be
s
t
t
em
pe
r
atu
r
e
s
e
ns
i
t
i
v
i
t
y
an
d
ox
i
de
t
hi
c
k
ne
s
s
,
tem
pe
r
atu
r
e
s
en
s
i
t
i
v
i
t
y
i
nc
r
ea
s
ed
r
em
ar
k
ab
l
y
un
ti
l
ox
i
de
th
i
c
k
ne
s
s
r
ea
c
he
d
5
nm
,
the
n
i
nc
r
ea
s
e
d
on
l
y
s
l
i
gh
tl
y
f
r
om
4
to
5
nm
ox
i
de
t
hi
c
k
ne
s
s
es
.
Henc
e,
a
l
i
ne
arl
y
i
nc
r
ea
s
i
ng
r
el
at
i
o
ns
hi
p
w
a
s
no
t
ob
s
e
r
v
ed
be
t
ween
tem
pe
r
atu
r
e
s
en
s
i
ti
v
i
t
y
an
d
ox
i
de
t
hi
c
k
ne
s
s
be
y
o
nd
5
nm
.
V
T
i
nc
r
ea
s
ed
h
y
pe
r
bo
l
i
c
al
l
y
,
DIB
L
i
nc
r
ea
s
ed
ex
p
on
e
nti
al
l
y
,
a
nd
S
S
i
nc
r
ea
s
e
d
l
i
ne
ar
l
y
wi
th
i
nc
r
ea
s
i
n
g
ox
i
d
e
thi
c
k
ne
s
s
of
F
i
nFE
T
f
r
o
m
1
–
5
nm
at
1
nm
s
tep
s
.
S
S
was
c
l
os
e
to
the
be
s
t
v
a
l
ue
at
1
nm
the
n
i
nc
r
ea
s
ed
wi
t
h
i
nc
r
ea
s
i
ng
ox
i
de
th
i
c
k
ne
s
s
.
T
he
r
ef
ore,
the
i
de
a
l
ox
i
de
th
i
c
k
ne
s
s
(
l
ow
S
S
)
of
F
i
nFET
un
de
r
the
c
o
nd
i
ti
o
ns
d
es
c
r
i
be
d
i
n
th
i
s
r
es
ea
r
c
h
i
s
1
nm
.
T
he
be
s
t
ox
i
de
thi
c
k
ne
s
s
of
F
i
nFET
w
i
t
h
ex
c
el
l
e
nt
V
T
, DI
B
L
an
d S
S
un
de
r
t
he
c
o
nd
i
ti
on
s
de
s
c
r
i
be
d
i
n t
hi
s
r
es
e
arc
h i
s
1
nm
.
A
c
kno
w
ledg
men
t
T
hi
s
r
es
ea
r
c
h
w
as
s
u
pp
ort
ed
b
y
Un
i
v
ers
i
t
y
M
al
a
y
s
i
a
P
ah
an
g
un
de
r
th
e
gran
t
s
c
he
m
e
No. (RD
U
17
0
32
8
4).
Ref
er
en
ce
s
[1
]
Has
h
i
m
Y
,
Si
d
e
k
O
.
Nan
o
w
i
re
Dim
e
n
s
i
o
n
s
Ef
f
e
c
t
o
n
ON
/OFF
Curre
n
t
Rat
i
o
a
n
d
Su
b
-
T
h
re
s
h
o
l
d
Sl
o
p
e
i
n
Si
l
i
c
o
n
Nan
o
w
i
re
T
ra
n
s
i
s
to
rs
.
J
o
u
rn
a
l
o
f
n
a
n
o
s
c
i
e
n
c
e
a
n
d
n
a
n
o
te
c
h
n
o
l
o
g
y
.
2
0
1
2
;
1
2
(9
)
:
7101
-
7
1
0
4
.
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
5
,
O
c
tob
er
20
19
:
24
7
5
-
24
80
2480
[2
]
Has
h
i
m
Y
,
Si
d
e
k
O
.
Stu
d
y
a
n
d
Si
m
u
l
a
ti
o
n
o
f
Sta
ti
c
Cha
ra
c
te
r
i
s
ti
c
s
o
f
Na
n
o
w
i
r
e
In
v
e
rte
r
w
i
th
Dif
fe
re
n
t
Cir
c
u
i
t
Co
n
f
i
g
u
ra
ti
o
n
s
.
I
n
t.
Re
v
.
M
o
d
e
l
.
Si
m
u
l
.
(IREM
O
S)
.
2
0
1
2
;
5
(1
)
:
93
-
98
.
[3
]
Has
h
i
m
Y
.
A
Rev
i
e
w
o
n
T
ra
n
s
i
s
to
r
s
i
n
Nan
o
Di
m
e
n
s
i
o
n
s
.
I
n
te
rn
a
ti
o
n
a
l
J
o
u
rn
a
l
o
f
E
n
g
i
n
e
e
ri
n
g
Te
c
h
n
o
l
o
g
y
a
n
d
S
c
i
e
n
c
e
s
(I
J
E
TS)
.
2
0
1
5
;
4
(
1
)
:
8
-
1
8
.
[4
]
Has
h
i
m
Y
,
Si
d
e
k
O
.
D
i
m
e
n
s
i
o
n
a
l
O
p
t
i
m
i
z
a
t
i
o
n
o
f
Nan
o
w
i
re
-
Com
p
l
e
m
e
n
ta
ry
M
e
ta
l
O
x
i
d
e
Se
m
i
c
o
n
d
u
c
t
o
r I
n
v
e
rt
e
r.
J
o
u
rn
a
l
o
f
n
a
n
o
s
c
i
e
n
c
e
a
n
d
n
a
n
o
te
c
h
n
o
l
o
g
y
.
2
0
1
3
;
1
3
(1
)
:
242
-
2
4
9
.
[5
]
Has
h
i
m
Y
,
Si
d
e
k
O
.
O
p
t
i
m
i
z
a
ti
o
n
o
f
Na
n
o
w
i
re
-
Res
i
s
t
a
n
c
e
L
o
a
d
L
o
g
i
c
In
v
e
rte
r
.
J
o
u
rn
a
l
o
f
n
a
n
o
s
c
i
e
n
c
e
a
n
d
n
a
n
o
t
e
c
h
n
o
l
o
g
y
.
2
0
1
5
;
1
5
(
9
)
:
6
8
4
0
-
6
8
4
2
.
[6
]
Has
h
i
m
Y
.
O
p
ti
m
i
z
a
ti
o
n
o
f
c
h
a
n
n
e
l
l
e
n
g
t
h
n
a
n
o
-
s
c
a
l
e
S
i
NW
T
b
a
s
e
d
SRAM
c
e
l
l
.
AIP
Con
fe
re
n
c
e
Pro
c
e
e
d
i
n
g
s
.
2
0
1
6
;
1
7
7
4
(1
)
:
0
5
0
0
2
0
.
[7
]
W
u
X
,
Cha
n
P,
Ch
a
n
M
.
Im
p
a
c
t
s
o
f
No
n
re
c
ta
n
g
u
l
a
r
Fi
n
Cros
s
S
e
c
t
i
o
n
o
n
th
e
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:/
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.
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