T
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1
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e
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c
tr
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a
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,
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a
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Copy
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t
©
2
0
1
9
Uni
v
e
rsi
t
a
s
Ahm
a
d
D
a
hl
a
n.
All
rig
ht
s
r
e
s
e
rve
d
.
1.
Int
r
o
d
u
ctio
n
P
ol
y
m
eric
i
ns
u
l
at
i
ng
m
at
eria
l
s
ha
v
e
be
c
om
e
an
i
m
po
r
tan
t
pa
r
t
of
hi
gh
v
ol
ta
ge
ap
pa
r
atu
s
es
o
v
er
t
w
o
de
c
a
de
s
[1
,
2]
. T
he
m
ai
n
f
un
c
t
i
o
n
of
po
l
y
m
eric
i
ns
u
l
a
ti
n
g
m
ate
r
i
a
l
s
i
n
hi
gh
v
o
l
tag
e
ap
pa
r
at
us
es
i
s
to
p
r
ov
i
de
e
l
ec
tr
i
c
a
l
i
ns
ul
ati
on
.
Ho
w
e
v
er
,
de
gr
ad
at
i
o
n
proc
es
s
es
oc
c
ur
i
n
po
l
y
m
eric
m
ate
r
i
al
s
,
whi
c
h
s
ub
s
eq
ue
ntl
y
j
eo
p
ardi
z
e
t
h
e
i
ns
ul
ati
on
p
erf
or
m
an
c
e
of
the
m
ate
r
i
al
s
.
S
uc
h
d
eg
r
a
da
t
i
on
proc
es
s
es
are
n
orm
al
l
y
i
ni
t
i
a
ted
b
y
s
m
al
l
el
ec
tr
i
c
al
s
pa
r
k
s
,
al
s
o
p
op
u
l
ar
l
y
k
no
w
n a
s
pa
r
ti
al
di
s
c
ha
r
g
e
s
[3]
.
In
l
i
gh
t
of
the
f
oregoi
ng
,
e
l
e
c
tr
i
c
al
tr
ee
i
ng
i
s
on
e
of
the
pa
r
ti
a
l
d
i
s
c
ha
r
ge
ph
en
om
en
a
tha
t
c
o
m
m
on
l
y
r
es
u
l
ts
i
n
t
he
d
eg
r
ad
ati
on
of
po
l
y
m
eric
i
ns
ul
at
i
n
g
m
ate
r
i
al
s
[
4]
.
T
he
r
e
f
ore,
el
ec
tr
i
c
a
l
tr
ee
r
es
i
s
tan
c
e
of
po
l
y
m
eri
c
i
ns
ul
at
i
n
g
m
ate
r
i
al
s
ne
ed
s
to
be
i
m
prov
ed
.
T
hi
s
c
an
be
ac
hi
ev
ed
b
y
m
i
x
i
ng
t
w
o
or
m
ore
di
ff
erent
t
y
p
es
of
po
l
y
m
ers
to
f
or
m
po
l
y
m
er
bl
e
nd
m
ate
r
i
al
s
[
5
-
7]
.
P
r
om
i
s
i
ng
i
m
prov
em
en
ts
of
po
l
y
m
eri
c
i
ns
u
l
at
i
ng
m
ate
r
i
al
s
ag
ai
ns
t
pa
r
t
i
a
l
di
s
c
ha
r
g
e
ac
ti
v
i
ti
es
wer
e
al
s
o
r
ep
orted
w
he
n c
erta
i
n
am
o
un
ts
of
i
n
organ
i
c
/orga
ni
c
n
an
of
i
l
l
ers
w
ere m
i
x
ed
wi
th
po
l
y
m
ers
[8
-
10]
.
Rec
en
t
l
y
,
po
l
y
m
er
na
n
oc
o
m
po
s
i
te
i
ns
u
l
at
i
ng
m
ate
r
i
al
s
are
ga
i
ni
ng
po
p
ul
ar
i
n
t
eres
ts
f
r
o
m
di
el
ec
tr
i
c
r
es
ea
r
c
he
r
s
i
n
att
em
pts
to
i
m
prov
e
po
l
y
m
ers
’
r
es
i
s
tan
c
e
a
g
ai
ns
t
e
l
ec
tr
i
c
a
l
de
gra
da
t
i
on
proc
es
s
es
wi
t
h
th
e
ad
d
i
ti
on
of
na
no
f
i
l
l
e
r
s
[1
1
-
13]
.
In
th
i
s
r
eg
ard,
the
i
m
prov
e
d
r
es
i
s
tan
c
e
of
na
n
oc
om
po
s
i
tes
ag
a
i
ns
t
pa
r
t
i
a
l
d
i
s
c
ha
r
ge
s
i
s
c
om
m
on
l
y
att
r
i
b
ute
d
t
o
the
n
an
om
ete
r
-
s
i
z
e
d
na
t
ure
of
the
f
i
l
l
ers
tha
t
c
on
tr
i
b
ute
s
to
th
e
pres
e
nc
e
of
l
a
r
ge
i
nt
erf
ac
i
al
areas
be
t
ween
t
he
p
ol
y
m
er
s
an
d
the
na
no
f
i
l
l
ers
[14
-
16]
.
C
on
s
eq
ue
ntl
y
,
t
he
ad
di
t
i
on
of
na
no
f
i
l
l
ers
i
n
p
ol
y
m
ers
ha
s
l
e
d
to
i
n
e
nh
a
nc
ed
p
arti
a
l
di
s
c
h
arge
r
es
i
s
tan
c
e
a
nd
el
ec
tr
i
c
a
l
tr
ee
r
es
i
s
tan
c
e
of
po
l
y
m
er
na
n
oc
om
po
s
i
tes
[17]
.
Not
on
l
y
ad
di
ti
o
n
of
na
no
f
i
l
l
ers
bu
t
the
qu
an
t
i
t
y
of
s
i
l
i
c
a
na
no
f
i
l
l
er
i
nf
l
ue
nc
ed
the
i
n
i
ti
at
i
on
ti
m
e
of
el
ec
tr
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c
al
tr
ee
i
ng
an
d
th
e
r
es
i
s
tan
c
e
t
o
w
ards
el
ec
tr
i
c
a
l
tre
ei
n
g i
n s
o
l
i
d
i
ns
ul
at
i
o
n [
1
8
-
21].
In
l
i
ne
wi
th
the
de
v
el
op
m
en
t
of
na
n
oc
om
po
s
i
tes
i
n
el
ec
tr
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c
a
l
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,
r
es
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r
s
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s
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th
at
t
he
p
erf
or
m
an
c
e
of
s
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c
on
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r
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r
(
S
i
R)
c
ou
l
d
a
l
s
o
be
en
ha
nc
ed
when
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
6
,
D
ec
em
be
r
2019
:
29
0
3
-
2911
2904
the
m
ate
r
i
al
i
s
ad
d
ed
wi
t
h
na
n
of
i
l
l
ers
.
SiR
,
a
w
i
de
l
y
us
e
d
po
l
y
m
eric
m
ate
r
i
al
i
n
i
nd
us
tr
i
a
l
ap
p
l
i
c
at
i
on
s
,
ha
s
b
ee
n
us
e
d
as
a
c
o
ati
ng
m
ate
r
i
a
l
f
or
hi
g
h
v
ol
t
ag
e
ou
tdo
or
i
ns
u
l
a
tors
es
pe
c
i
a
l
l
y
f
or
gl
as
s
es
a
nd
c
eram
i
c
s
to
h
el
p
r
e
du
c
i
ng
m
ai
nte
na
n
c
e
c
os
ts
a
nd
r
es
i
s
t
po
te
nti
al
f
l
as
ho
v
ers
of
the
i
ns
u
l
at
ors
[22
-
24].
B
es
i
de
s
th
at,
S
i
R
ha
s
al
s
o
be
en
us
ed
as
i
ns
ul
ati
ng
m
ate
r
i
al
s
f
or
c
ab
l
e
ac
c
es
s
orie
s
s
uc
h a
s
to
j
o
i
nt
m
ate
r
i
al
s
an
d
s
tr
es
s
c
on
es
[2
5,
26
].
S
i
nc
e
th
e
us
e
of
S
i
R
i
n
hi
g
h
v
ol
tag
e
i
ns
ul
at
i
on
s
y
s
tem
s
,
m
an
y
s
tu
di
es
ha
v
e
be
en
c
on
du
c
te
d
to
un
de
r
s
tan
d
i
ts
r
ol
e
i
n
i
m
prov
i
n
g
i
ns
ul
at
i
o
n
pe
r
f
orm
an
c
e
[27
,
28
].
Ho
we
v
er
,
the
el
ec
tr
i
c
al
pro
pe
r
ti
es
,
es
pe
c
i
a
l
l
y
the
e
l
ec
tr
i
c
a
l
tr
ee
r
es
i
s
tan
c
e
of
S
i
R,
w
h
en
ad
de
d
w
i
th
S
i
O
2
na
no
pa
r
t
i
c
l
es
,
ar
e
l
es
s
ex
pl
ore
d.
A
l
s
o,
t
he
o
pt
i
m
u
m
f
or
m
ul
ati
o
n
of
S
i
O
2
n
an
o
f
i
l
l
ers
th
at
c
an
ef
f
ec
ti
v
el
y
s
u
pp
r
es
s
th
e
g
r
ow
t
h
of
e
l
ec
tr
i
c
a
l
tr
ee
i
n
g
i
n
S
i
R
h
as
no
t
be
en
we
l
l
s
tu
di
ed
an
d
c
l
arif
i
ed
.
T
hi
s
art
i
c
l
e,
th
eref
ore,
r
ep
orts
on
the
c
ha
r
ac
teri
z
at
i
o
n
of
th
e
el
ec
tr
i
c
al
tr
ee
c
ha
r
ac
teri
s
ti
c
s
of
S
i
R
ba
s
e
d
na
no
c
om
po
s
i
tes
when
a
dd
ed
wi
th
a
di
ff
erent
wei
gh
t
r
ati
o
of
S
i
O
2
na
no
pa
r
t
i
c
l
es
.
T
he
o
pti
m
al
S
i
R/S
i
O
2
na
n
oc
om
po
s
i
te
f
orm
ul
ati
o
n
t
o
w
ards
el
ec
tr
i
c
a
l
tr
ee
c
ha
r
ac
teri
s
ti
c
s
ha
s
be
e
n d
i
s
c
us
s
ed
ac
c
ordi
ng
l
y
.
2.
M
et
h
o
d
o
log
y
T
he
s
a
m
pl
e p
r
ep
arati
on
an
d e
x
pe
r
i
m
en
ta
l
s
etu
p p
r
oc
e
du
r
e a
r
e
el
uc
i
d
ate
d i
n t
h
i
s
s
ec
ti
on
.
2.1
.
S
amp
l
e P
r
epa
r
atio
n
F
um
ed
or
p
y
r
og
e
ni
c
S
i
O
2
n
an
of
i
l
l
er
,
ob
t
ai
n
ed
f
r
om
S
i
gm
a
A
l
dric
h,
wi
th
a
s
pe
c
i
f
i
c
pa
r
ti
c
l
e
s
i
z
e
of
12
nm
,
w
as
us
ed
as
a
na
no
f
i
l
l
e
r
.
T
he
S
y
l
ga
r
d
18
4
S
i
R
e
l
as
tom
er
,
ob
t
ai
ne
d
f
r
om
Dow
Cor
ni
ng
,
was
us
ed
as
a
po
l
y
m
er
.
T
he
S
i
R
i
s
of
the
P
o
l
y
d
i
m
eth
y
l
s
i
l
ox
an
e
(
P
DMS
)
t
y
pe
an
d
be
l
on
gs
to
a
grou
p
of
po
l
y
m
eric
organo
s
i
l
i
c
on
e
c
om
po
un
ds
r
ef
err
ed
t
o
as
s
i
l
i
c
on
es
. It
i
s
op
t
i
c
al
l
y
c
l
ea
r
,
i
n
ert, no
n
-
tox
i
c
a
nd
n
on
-
f
l
am
m
ab
l
e.
T
he
m
i
x
i
ng
proc
es
s
of
S
i
R
an
d
f
um
ed
S
i
O
2
na
no
f
i
l
l
ers
was
pe
r
f
or
m
ed
w
i
t
h
t
he
ai
d
of
a
m
ag
ne
ti
c
s
ti
r
r
er
.
S
i
R
an
d
S
i
O
2
n
an
of
i
l
l
ers
w
ere
m
i
x
ed
at
a
s
pe
ed
of
12
5
r
pm
f
or
1
ho
ur
.
Ul
tr
as
on
i
c
ato
r
(
F
i
s
he
r
,
F
B
70
5
B
X
)
w
as
us
ed
i
n
th
e
m
i
x
i
ng
proc
es
s
to
en
s
ur
e
tha
t
t
he
S
i
O
2
na
no
pa
r
t
i
c
l
es
w
ere
di
s
p
ers
ed
i
n
S
i
R
m
atri
c
es
.
T
he
di
s
pe
r
s
i
on
e
ne
r
g
y
,
po
wer
op
erat
i
o
n,
an
d
am
pl
i
tud
e
w
ere m
ore tha
n
10
0
k
J
, b
et
w
e
en
1
00
-
1
50
W
,
an
d 7
0%
, res
pe
c
ti
v
el
y
.
A
r
e
-
w
e
i
g
hi
ng
proc
es
s
w
a
s
c
arr
i
ed
ou
t
af
ter
the
s
o
ni
c
at
i
on
proc
es
s
be
c
au
s
e
s
om
e
wei
g
ht
l
os
s
es
wer
e
ex
pe
c
t
ed
du
r
i
ng
the
r
ed
e
p
l
o
y
m
en
t
proc
es
s
f
r
om
on
e
b
ea
k
er
to
an
oth
er
at
the
m
i
x
i
ng
s
tag
e
.
A
f
ter
c
om
pl
et
i
n
g
the
r
e
-
wei
gh
i
ng
pro
c
es
s
,
the
S
i
R
/S
i
O
2
na
no
c
o
m
po
s
i
te
s
w
ere
m
i
x
ed
w
i
th
a
ha
r
d
en
er
b
as
ed
on
1
0:1
S
i
R
t
o
ha
r
de
ne
r
r
at
i
o,
f
or
15
m
i
nu
te
s
at
12
5
r
pm
.
T
he
S
i
R/
S
i
O
2
na
n
oc
om
po
s
i
tes
w
ere
f
urther
m
i
x
ed
us
i
ng
a
m
ag
ne
t
i
c
s
ti
r
r
er
.
T
he
ne
x
t
s
tep
was
the
de
ga
s
i
f
i
c
at
i
on
pr
oc
es
s
to
r
em
ov
e
po
ten
ti
a
l
v
oi
d
s
an
d
bu
b
bl
es
f
or
m
ed
i
n
the
S
i
R/
S
i
O
2
na
no
c
om
po
s
i
tes
d
urin
g
th
e
m
i
x
i
ng
proc
es
s
.
T
he
de
ga
s
i
f
i
c
ati
on
proc
es
s
w
as
pe
r
f
orm
ed
b
y
us
i
n
g
a
v
ac
uu
m
ov
e
n
f
or
25
m
i
nu
tes
at
27
°C.
A
f
terwar
ds
,
the
S
i
R
/S
i
O
2
n
an
oc
om
po
s
i
t
e
s
am
pl
e
w
as
c
as
t
on
to
th
e
e
l
ec
tr
od
es
g
ap
on
a
m
i
c
r
os
c
op
e
s
l
i
de
gl
as
s
.
T
he
n,
the
l
ea
f
-
l
i
k
e
s
pe
c
i
m
en
was
c
ov
ered
w
i
t
h
a
m
i
c
r
os
c
op
e
c
ov
er
gl
as
s
.
T
he
l
ea
f
-
l
i
k
e
s
pe
c
i
m
en
of
S
i
R/
S
i
O
2
n
an
oc
om
po
s
i
tes
was
c
ured
at
10
0
°C
f
or
45
m
i
nu
tes
i
ns
i
d
e
a
v
ac
uu
m
ov
e
n.
T
ab
l
e
1
s
ho
w
s
t
he
c
om
po
s
i
ti
on
s
of
SiR
/
S
i
O
2
na
no
c
om
po
s
i
tes
prepare
d f
or el
ec
tr
i
c
a
l
tre
ei
ng
te
s
ts
.
T
ab
l
e
1
.
S
am
pl
e
Com
po
s
i
ti
on
s
of
S
i
R
/S
i
O
2
Na
no
c
om
po
s
i
tes
S
a
m
p
le
N
u
mbe
r
N
a
n
o
c
o
m
p
o
s
i
t
e
C
o
m
p
o
s
i
t
ion
s
1
U
n
f
il
led
S
iR
2
S
iR
+1
w
t
%
S
iO
2
3
S
iR
+2
w
t
%
S
iO
2
4
S
iR
+3
w
t
%
S
iO
2
5
S
iR
+4
w
t
%
S
iO
2
6
S
iR
+5
w
t
%
S
iO
2
7
S
iR
+6
w
t
%
S
iO
2
8
S
iR
+7
w
t
%
S
iO
2
2.2
.
E
xpe
r
imen
t
a
l S
etu
p
Im
ag
es
of
el
ec
tr
i
c
al
tr
ee
i
ng
i
n
un
f
i
l
l
e
d
S
i
R
an
d
S
i
R/
S
i
O
2
na
n
oc
om
po
s
i
tes
w
ere
c
ap
ture
d
wi
th
the
a
i
d
of
an
o
nl
i
n
e
m
on
i
tori
ng
s
y
s
tem
.
T
he
on
l
i
n
e
m
on
i
tori
ng
s
y
s
tem
c
on
s
i
s
ted
of
thre
e
m
ai
n
pa
r
ts
,
i
.e.
,
a
pe
r
s
on
a
l
c
o
m
pu
ter
,
a
s
tere
o
m
i
c
r
os
c
op
e
an
d
a
c
ha
r
g
e
-
c
ou
p
l
ed
de
v
i
c
e
(
CCD)
c
a
m
era
–
the
O
l
y
m
pu
s
S
Z
X
16
Res
ea
r
c
h
S
tere
om
i
c
r
os
c
op
e
eq
ui
pp
e
d
w
i
t
h
an
a
u
x
i
l
i
ar
y
D
P
-
26
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KO
M
NIK
A
IS
S
N: 1
69
3
-
6
93
0
◼
Cl
arif
i
c
at
i
on
of
t
he
op
t
i
mu
m
s
i
l
i
c
a
na
no
f
i
l
l
er a
mo
u
nt
f
or el
ec
tr
i
c
a
l
tre
ei
n
g res
i
s
ta
nc
e
(
Z
. Nawa
w
i
)
2905
O
l
y
m
pu
s
CCD
c
am
era
w
as
us
ed
.
T
he
c
am
era
ha
s
72
ti
m
es
m
ag
ni
f
i
c
ati
on
c
a
pa
b
i
l
i
t
y
an
d
i
t
was
i
nte
r
f
ac
ed
to
a
c
om
pu
ter
m
an
uf
ac
tured
b
y
O
l
y
m
pu
s
Cor
po
r
ati
on
.
E
ac
h
tes
t
s
pe
c
i
m
en
w
as
pl
ac
e
d i
n a
c
o
nta
i
ne
r
f
i
l
l
e
d
wi
th
s
i
l
i
c
on
e
oi
l
to
a
v
o
i
d p
ot
en
ti
al
f
l
as
h
ov
er dur
i
ng
th
e
ex
pe
r
i
m
en
t.
F
i
gu
r
e
1
s
ho
w
s
th
e
ex
pe
r
i
m
en
tal
s
etu
p
f
or
the
el
ec
tr
i
c
al
tr
ee
i
n
g
s
tud
y
.
T
he
ne
ed
l
e
el
ec
tr
od
e
of
ea
c
h
l
ea
f
-
l
i
k
e
s
pe
c
i
m
en
w
as
c
on
ne
c
t
ed
to
a
n
A
C
h
i
gh
v
o
l
ta
g
e
s
ou
r
c
e
w
hi
l
e
the
p
l
an
e
el
ec
tr
od
e
was
c
on
ne
c
te
d
to
th
e
grou
nd
.
A
v
o
l
tag
e
s
ou
r
c
e
of
22
0
V
wi
t
h
a
f
r
eq
ue
nc
y
of
50
H
z
was
us
ed
as
a
s
u
p
p
l
y
to
th
e
v
ol
t
ag
e
r
e
gu
l
ato
r
.
T
he
v
o
l
tag
e
r
eg
ul
a
tor
r
eg
ul
at
ed
th
e
HV
tr
an
s
f
or
m
er
f
r
o
m
0
to
30
k
V
.
T
he
ap
pa
r
en
t
po
wer
o
f
the
HV
tr
an
s
f
or
m
er
w
as
1.3
8
k
V
A
wi
th
a
m
ax
i
m
u
m
ou
tpu
t
c
urr
en
t
of
14
m
A
.
A
61
0
0
Ω
,
60
W
hi
gh
v
ol
tag
e
r
es
i
s
tor
wa
s
c
on
ne
c
te
d
i
n
s
erie
s
wi
th
th
e
s
ec
o
nd
ar
y
s
i
de
of
HV
tr
a
ns
f
or
m
er
an
d
th
e
ne
e
dl
e
el
ec
tr
od
e.
T
he
pu
r
po
s
e
of
the
HV
r
es
i
s
tor
w
as
to
l
i
m
i
t
the
c
urr
en
t
f
l
o
w
w
h
en
a
s
h
ort
c
i
r
c
ui
t
oc
c
urr
ed
.
A
h
i
g
h
-
r
es
ol
ut
i
on
f
i
el
d
em
i
s
s
i
on
el
ec
tr
on
m
i
c
r
os
c
op
e
(
F
E
S
E
M)
a
nd
a
F
ou
r
i
er
tr
an
s
f
or
m
i
nf
r
ared
(
F
T
IR
)
s
pe
c
tr
os
c
op
e
was
l
at
er us
ed
to
s
tu
d
y
the
m
orphol
og
y
of
th
e s
am
pl
es
.
F
i
gu
r
e
1.
T
he
eq
ui
v
a
l
e
nt
c
i
r
c
ui
t o
f
th
e
ex
pe
r
i
m
en
ta
l
s
et
up
3.
Result
s
and
Dis
cussion
T
r
ee
i
ng
an
a
l
y
s
i
s
a
nd
c
he
m
i
c
al
an
d
p
h
y
s
i
c
a
l
bo
nd
i
n
g
s
tu
d
y
wer
e
ex
p
l
a
i
n
ed
i
n
de
ta
i
l
i
n
thi
s
s
ec
ti
on
.
3.1
. T
r
ee
ing
A
n
al
ys
is
T
he
tr
ee
i
nc
e
pti
on
v
o
l
ta
g
e,
tr
ee
break
do
w
n
t
i
m
e,
tr
ee
prop
ag
a
ti
o
n
l
en
gth
a
n
d
tr
ee
gro
w
th
r
a
te
of
th
e
i
nv
es
ti
g
a
ted
n
an
oc
om
po
s
i
te
s
am
pl
e
s
w
ere
an
al
y
s
ed
.
3.1
.1
. T
r
ee
In
ce
p
t
ion
V
o
lt
a
g
e
T
he
de
pe
nd
e
nc
e
of
the
tr
ee
i
nc
ep
t
i
on
v
ol
t
ag
e
of
S
i
R
on
na
n
of
i
l
l
er
l
o
ad
i
ng
l
e
v
e
l
s
i
s
s
ho
w
n
i
n
F
i
gu
r
e
2
.
T
he
t
r
ee
i
nc
ep
ti
o
n
v
o
l
ta
ge
w
as
hi
gh
er
f
or
al
l
S
i
R/
S
i
O
2
n
an
oc
om
po
s
i
te
s
a
m
pl
es
c
om
pa
r
ed
wi
th
t
h
e
un
f
i
l
l
ed
S
i
R.
T
he
tr
ee
i
n
c
ep
ti
o
n
v
ol
t
ag
e
f
or
the
un
f
i
l
l
ed
S
i
R
was
9.4
k
V
.
T
he
tr
ee
i
nc
ep
t
i
o
n
v
o
l
tag
e
i
nc
r
ea
s
e
d
w
i
t
h
i
nc
r
ea
s
i
ng
na
no
f
i
l
l
er
l
o
ad
i
ng
l
e
v
e
l
s
,
wi
th
the
h
i
g
he
s
t
v
ol
tag
e a
t
19
.
4
k
V
f
or Si
R/S
i
O
2
na
no
c
om
po
s
i
tes
c
on
t
ai
ni
n
g 7
wt% of
S
i
O
2
.
3.1
.2
. T
r
ee
B
r
e
ak
d
o
w
n
T
i
me
F
i
gu
r
e
3
s
h
o
w
s
the
tr
e
e
br
ea
k
do
wn
ti
m
e
f
or
un
f
i
l
l
ed
S
i
R
an
d
S
i
R/S
i
O
2
na
no
c
om
po
s
i
tes
wi
th
1
w
t%,
2
w
t%
,
3
wt%,
4
w
t%
,
5
wt%,
6
wt%
an
d
7
w
t%
of
S
i
O
2
n
an
of
i
l
l
er
.
T
he
un
f
i
l
l
ed
S
i
R
r
ec
orded
t
he
ea
r
l
i
es
t
tr
e
e
break
do
w
n
t
i
m
e
c
o
m
pa
r
ed
wi
th
the
S
i
R/S
i
O
2
na
no
c
om
po
s
i
tes
.
T
he
tr
ee
break
do
w
n
t
i
m
e
of
the
un
f
i
l
l
ed
S
i
R
w
as
1
51
s
.
F
or
the
S
i
R/S
i
O
2
n
a
no
c
om
po
s
i
tes
,
the
tr
ee
bre
ak
do
w
n
t
i
m
e
i
nc
r
ea
s
ed
w
i
t
h
i
nc
r
ea
s
i
ng
am
ou
nts
of
S
i
O
2
up
to
5
w
t%
;
the
tr
ee
break
do
wn
ti
m
e
f
or
s
a
m
pl
es
c
on
tai
ni
n
g
1
w
t%,
2
wt%,
3
wt%,
4
w
t%
a
nd
5
w
t%
of
S
i
O
2
l
oa
di
n
gs
i
n
S
i
R
wer
e
3
16
s
,
62
1
s
,
74
5
s
,
10
82
s
an
d
13
62
s
,
r
es
pe
c
ti
v
e
l
y
.
A
t
6
wt%
an
d
7
wt%
of
S
i
O
2
l
oa
di
ng
l
ev
el
s
,
tr
ee
break
do
w
n
t
i
m
e
r
ed
uc
ed
dram
ati
c
al
l
y
–
th
e
tr
ee
bre
a
k
do
w
n
ti
m
e
i
s
,
ho
w
e
v
er
,
l
on
g
er
th
an
t
he
u
nf
i
l
l
e
d
S
i
R;
the
tr
ee
break
do
w
n
t
i
m
e
f
or
s
a
m
pl
es
c
on
tai
n
i
ng
6
wt%
an
d
7
w
t%
S
i
O
2
be
c
am
e 2
3
4 s
an
d
21
3 s
r
es
pe
c
ti
v
e
l
y
.
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
6
,
D
ec
em
be
r
2019
:
29
0
3
-
2911
2906
F
i
gu
r
e
2.
T
r
ee
i
nc
ep
t
i
o
n v
ol
tag
e
of
S
i
R
wi
t
h d
i
f
f
erent S
i
O
2 l
o
ad
i
ng
l
e
v
e
l
s
F
i
gu
r
e
3.
T
r
ee
break
do
wn ti
m
e o
f
S
i
R
wi
th
di
ff
erent S
i
O
2 l
o
ad
i
ng
l
e
v
e
l
s
3.1
.3
. T
r
ee
P
r
o
p
ag
atio
n
Len
g
t
h
F
or
the
S
i
R/
S
i
O
2
n
an
oc
om
po
s
i
tes
,
th
e
m
ea
s
urem
en
t
of
the
el
ec
tr
i
c
al
tr
ee
pro
pa
ga
ti
on
l
en
gth
w
as
do
ne
i
n
the
ax
i
al
di
r
ec
t
i
o
n
be
t
ween
th
e
ti
p
of
the
ne
ed
l
e
an
d
the
p
l
an
e
e
l
ec
tr
od
e.
B
as
ed
on
F
i
g
ure
4
,
th
e
tr
e
es
i
n
na
n
oc
om
po
s
i
te
s
am
pl
es
wi
th
1
w
t%
,
2
wt%
an
d
3
w
t%
of
S
i
O
2
brid
g
ed
the
g
ap
of
th
e
n
e
ed
l
e
a
nd
p
l
an
e
el
ec
tr
o
de
s
(
20
0
0
µm
)
at
4
00
s
,
70
0
s
a
nd
90
0
s
,
r
es
pe
c
ti
v
el
y
.
F
or
s
am
pl
es
c
on
ta
i
n
i
ng
4
w
t%
a
nd
5
w
t%
of
S
i
O
2
na
no
f
i
l
l
er
,
the
el
ec
t
r
i
c
al
tr
ee
s
d
i
d
no
t
brid
ge
th
e
ga
p
of
the
n
ee
d
l
e
an
d
pl
an
e
e
l
ec
tr
od
e
–
the
s
e
s
am
pl
es
r
ec
orded
el
ec
tr
i
c
a
l
tr
ee
propa
ga
t
i
on
l
en
gth
s
of
18
7
7
µm
an
d
16
31
µm
,
r
es
pe
c
ti
v
el
y
,
af
ter
the
el
ec
tr
i
c
al
tr
e
es
propag
ate
d
f
or
10
00
s
.
M
ea
n
whi
l
e,
th
e
e
l
ec
tr
i
c
a
l
tr
e
es
i
n
t
he
s
am
pl
es
wi
th
6
w
t%
an
d
7
w
t%
of
S
i
O
2
propa
ga
te
d
r
a
pi
dl
y
un
t
i
l
br
ea
k
do
wn
oc
c
urr
ed
.
It
i
s
no
t
e
w
orth
y
t
ha
t
th
es
e
s
am
pl
e
s
wer
e
c
h
os
en
as
r
ep
r
es
en
t
ati
v
es
of
th
e o
v
era
l
l
el
ec
tr
i
c
al
tr
ee
pr
op
a
g
ati
o
n l
en
g
th
f
or eac
h s
am
pl
e t
y
p
e
[
1]
.
F
i
gu
r
e
4.
T
r
ee
propa
g
ati
on
l
en
gth
s
of
S
i
R
wi
th
di
ff
erent S
i
O
2
l
o
ad
i
ng
l
e
v
e
l
s
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KO
M
NIK
A
IS
S
N: 1
69
3
-
6
93
0
◼
Cl
arif
i
c
at
i
on
of
t
he
op
t
i
mu
m
s
i
l
i
c
a
na
no
f
i
l
l
er a
mo
u
nt
f
or el
ec
tr
i
c
a
l
tre
ei
n
g res
i
s
ta
nc
e
(
Z
. Nawa
w
i
)
2907
3.1
.4
. T
r
ee
G
r
o
w
t
h
Rate
T
he
growth
r
at
e
of
e
l
ec
tr
i
c
al
tr
e
ei
ng
f
or
un
f
i
l
l
e
d
S
i
R
a
nd
S
i
R/
S
i
O
2
na
no
c
om
po
s
i
t
es
wi
th
1
w
t%,
2
w
t%
,
3
wt%,
4
w
t
%,
5
w
t
%,
6
wt%
a
nd
7
w
t%
of
S
i
O
2
na
n
of
i
l
l
er
l
oa
d
i
ng
l
ev
e
l
s
i
s
s
h
o
w
n
i
n
F
i
gu
r
e
5
. T
he
grow
t
h
r
at
e
of
el
ec
tr
i
c
a
l
tr
ee
i
n
g
i
n
S
i
R
wi
th
0
w
t%,
1
wt%,
2
wt%,
3
w
t%,
4
wt%,
5
wt%,
6
w
t
%
an
d
7
w
t
%
wer
e
1
1.
99
µm
/s
,
8.5
5
µ
m
/s
,
4.5
7
µm
/s
,
3.8
6
µm
/
s
,
3.2
5
µm
/s
,
2.5
8 µm
/s
, 6
8.6
6
µm
/s
an
d 8
9.2
1 µm
/s
,
r
es
pe
c
ti
v
e
l
y
.
F
i
gu
r
e
5.
T
he
gro
w
th
r
ate
o
f
el
ec
tr
i
c
al
tr
ee
i
ng
of
un
f
i
l
l
e
d S
i
R a
nd
S
i
R
/S
i
O
2
s
am
pl
es
f
i
l
l
ed
w
i
t
h d
i
ff
erent S
i
O
2
c
on
ten
ts
3.1
.5
. E
l
ec
t
r
i
ca
l T
r
ee
ing
C
h
ann
el
T
he
el
ec
tr
i
c
al
tr
e
e
c
ha
n
n
el
s
f
or
al
l
i
nv
es
ti
g
ate
d
s
a
m
pl
es
w
ere
an
al
y
z
ed
b
as
ed
on
the
prop
ag
a
ti
o
n
of
el
ec
tr
i
c
al
tr
ee
s
up
o
n
the
i
ni
ti
a
ti
o
n
of
tr
ee
i
n
g.
T
he
el
ec
tr
i
c
a
l
t
r
ee
i
m
ag
es
f
or
na
no
c
om
po
s
i
te
s
am
pl
es
c
on
ta
i
n
i
ng
1
w
t%,
2
wt%,
3
w
t%
,
4
w
t%,
5
w
t%,
6
w
t%
a
nd
7
wt%
of
SiO
2
an
d
pu
r
e
S
i
R
are
s
ho
wn
i
n
F
i
gu
r
es
6
(a
-
h),
r
es
p
ec
ti
v
el
y
.
O
f
no
te,
the
e
l
ec
tr
i
c
al
tr
ee
i
ng
f
or
al
l
na
no
c
om
po
s
i
te
s
am
pl
es
were of
th
e
branc
h
t
y
p
e.
2
0
0
µ
m
2
0
0
µ
m
2
0
0
µ
m
2
0
0
µ
m
(
a)
(
b)
(
c
)
(
d)
2
0
0
µ
m
2
0
0
µ
m
2
0
0
µ
m
2
0
0
µ
m
(
e)
(
f
)
(
g)
(
h)
F
i
gu
r
e
6.
E
l
ec
tr
i
c
al
tr
ee
i
m
a
ge
s
f
or s
a
m
pl
es
c
on
ta
i
n
i
ng
(
a) pure
S
i
R (
b) 1
w
t%
, (c
)
2
w
t%, (
d)
3
w
t%,
(
e) 4
w
t%
, (f
)
5
w
t%,
(
g) 6
w
t% a
nd
(
h)
7
w
t%
of
SiO
2
;
t
he
m
ea
s
urem
en
t s
c
al
e
i
s
20
0
µm
3.2
. Ch
emic
al
and
P
h
y
s
ic
al
Bo
n
d
ing
S
t
u
d
y
T
he
c
he
m
i
c
al
an
d
ph
y
s
i
c
al
bo
nd
i
ng
s
wer
e
an
al
y
s
e
d
us
i
ng
f
i
el
d
em
i
s
s
i
on
s
c
an
n
i
ng
el
ec
tr
on
m
i
c
r
os
c
op
y
an
d F
ou
r
i
er t
r
a
ns
f
or
m
i
nf
r
ared s
pe
c
tr
os
c
op
y
.
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
6
,
D
ec
em
be
r
2019
:
29
0
3
-
2911
2908
3.2
.1
. Field
E
mis
sion
S
ca
n
n
ing
E
lec
t
r
o
n
M
icr
o
sc
o
p
y
T
he
di
s
pe
r
s
i
on
s
tat
e
of
t
h
e
S
i
O
2
na
no
f
i
l
l
er
i
n
S
i
R
was
an
al
y
z
ed
us
i
ng
F
i
e
l
d
E
m
i
s
s
i
on
S
c
an
n
i
n
g
E
l
ec
tr
on
M
i
c
r
o
s
c
op
y
(
F
E
S
E
M).
F
i
gu
r
es
7(a
–
e)
s
ho
w
S
E
M
m
i
c
r
og
r
ap
hs
f
or
na
no
c
om
po
s
i
te
s
am
pl
es
c
on
tai
ni
ng
1
w
t
%,
3
w
t
%,
5
wt%,
6
w
t
%
a
nd
7
w
t%
of
S
i
O
2
,
r
es
pe
c
ti
v
el
y
.
S
i
O
2
na
no
f
i
l
l
er
s
ha
v
e l
arger
s
p
ec
i
f
i
c
s
urf
ac
e a
r
ea
s
t
ha
n
the
c
on
v
en
t
i
on
a
l
p
arti
c
ul
ate
f
i
l
l
ed
s
y
s
t
em
.
S
i
O
2
na
n
of
i
l
l
ers
are
c
l
os
el
y
l
oc
ate
d
wi
th
t
he
i
r
ne
i
g
hb
or
i
ng
n
an
of
i
l
l
ers
.
D
ue
to
the
s
m
al
l
s
i
z
e
of
na
no
pa
r
t
i
c
l
es
,
l
arge
i
nte
r
f
ac
i
a
l
area
s
ex
i
s
t
be
t
w
e
en
th
e
S
i
O
2
na
no
f
i
l
l
ers
i
n
the
S
i
R
,
w
h
i
c
h
i
s
c
on
s
i
d
ered
to
be
on
e
of
the
k
e
y
r
ol
es
l
ea
di
ng
t
o
th
e
u
ni
qu
e
propert
i
es
of
na
no
c
om
po
s
i
tes
.
T
hi
s
i
nt
erf
ac
i
al
area
c
an
b
e
c
on
s
i
d
ered
as
a
n
i
nte
r
ac
ti
on
z
o
ne
or
z
an
i
nt
erph
as
e.
T
he
i
nte
r
ac
ti
on
z
o
ne
a
t
the
s
urfac
e
of
S
i
O
2
nan
of
i
l
l
ers
c
ou
l
d
c
a
us
e
the
na
no
f
i
l
l
ers
to
b
e
att
a
c
he
d
ph
y
s
i
c
a
l
l
y
i
n
th
e
S
i
R
m
atri
c
es
.
T
hi
s
att
ac
h
m
en
t
r
es
ul
ts
i
n
the
s
tr
uc
ture
of
S
i
R
be
c
o
m
i
ng
de
ns
el
y
pa
c
k
ed
an
d
r
ob
us
t.
F
r
om
the
m
i
c
r
og
r
ap
hs
,
f
i
ne
-
s
i
z
ed
SiO
2
pa
r
t
i
c
l
es
c
an
be
ob
s
e
r
v
ed
i
n
a
l
l
the
na
no
c
om
po
s
i
te
s
am
pl
es
.
A
g
gl
om
erated
S
i
O
2
pa
r
t
i
c
l
es
c
an
al
s
o
be
ob
s
er
v
ed
i
n
p
art
of
the
s
am
pl
es
.
A
s
the
am
ou
nt
of
S
i
O
2
i
nc
r
ea
s
e
d
to
6
wt%
a
nd
7
w
t%,
i
nc
r
ea
s
ed
na
no
p
arti
c
l
e
ag
g
l
om
erati
on
s
c
a
n
c
l
ea
r
l
y
be
o
bs
erv
e
d,
as
i
n
F
i
gu
r
es
7
(
d)
an
d
7
(
e) f
or the
n
an
oc
om
p
os
i
te
s
am
pl
e
s
c
on
t
ai
n
i
n
g 6
w
t%
an
d 7
wt% of
S
i
O
2
, res
pe
c
ti
v
e
l
y
.
(
a)
(
b)
(
c
)
(
d)
(
e)
F
i
gu
r
e
7.
S
E
M m
i
c
r
og
r
ap
hs
of
na
no
c
om
po
s
i
te
s
am
pl
es
c
on
ta
i
ni
ng
(
a) 1
w
t%, (
b)
3
w
t%,
(
c
)
5
w
t%
, (d)
6
wt%, a
nd
(
e)
7
wt% of
S
i
O
2
Evaluation Warning : The document was created with Spire.PDF for Python.
T
E
L
KO
M
NIK
A
IS
S
N: 1
69
3
-
6
93
0
◼
Cl
arif
i
c
at
i
on
of
t
he
op
t
i
mu
m
s
i
l
i
c
a
na
no
f
i
l
l
er a
mo
u
nt
f
or el
ec
tr
i
c
a
l
tre
ei
n
g res
i
s
ta
nc
e
(
Z
. Nawa
w
i
)
2909
3.2
.2
. Fo
u
r
ie
r
T
r
ansf
o
r
m
I
n
f
r
ar
ed
S
p
ec
t
r
o
sc
o
p
y
F
i
gu
r
e
8
s
ho
w
s
th
e
F
ou
r
i
er T
r
an
s
f
or
m
In
f
r
ared
(
F
T
IR)
s
pe
c
tr
a
f
or
the
S
i
O
2
na
no
f
i
l
l
e
r
an
d
the
na
n
oc
om
po
s
i
te
s
am
pl
e
s
c
on
ta
i
ni
ng
0
wt%,
1
wt%,
3
wt%,
5
w
t
%,
6
w
t%
a
nd
7
w
t%
of
S
i
O
2
.
T
he
c
ha
r
ac
teri
s
ti
c
tr
an
s
m
i
tta
nc
e
ba
nd
of
S
i
O
2
n
an
of
i
l
l
er
c
an
be
ob
s
er
v
e
d
at
1
1
10
c
m
-
1
.
T
he
s
pe
c
tr
u
m
c
orr
es
po
nd
s
to
th
e s
i
l
i
c
on
e (S
i
-
O
)
bo
nd
i
ng
.
4000
3500
3000
2500
2000
1500
1000
500
-2
0
0
20
40
60
80
100
120
140
T
ra
n
smi
ssi
o
n
(%
)
W
a
v
e
l
e
n
g
t
h
(cm
-1
)
S
i
O
2
P
o
w
d
e
r
S
i
R
S
i
R
+
1
%
S
i
O
2
S
i
R
+
3
%
S
i
O
2
S
i
R
+
5
%
S
i
O
2
S
i
R
+
6
%
S
i
O
2
S
i
R
+
7
%
S
i
O
2
F
i
gu
r
e
8.
F
T
IR s
pe
c
tr
a o
f
S
i
O
2
po
wder a
nd
na
n
oc
om
po
s
i
te
s
am
pl
es
c
on
t
ai
n
i
n
g
1
w
t%,
3
w
t%,
5
w
t%
, 6
wt
% and
7
w
t%
of
S
i
O
2
an
d
p
ure S
i
R
4.
Disc
u
s
sion
T
he
S
E
M
m
i
c
r
og
r
ap
hs
s
ho
wed
th
at
f
i
ne
-
s
i
z
ed
S
i
O
2
p
arti
c
l
es
c
ou
l
d
b
e
ob
s
erv
ed
i
n
al
l
the
n
an
oc
om
po
s
i
te
s
am
pl
es
.
Inc
r
ea
s
i
n
g
th
e
am
ou
nt
of
SiO
2
na
no
f
i
l
l
er
,
ho
wev
er
,
r
es
ul
ted
i
n
i
nc
r
ea
s
i
ng
am
ou
nts
of
S
i
O
2
pa
r
ti
c
l
e
a
gg
l
om
erati
on
s
.
M
ea
n
whi
l
e,
the
F
T
IR
s
pe
c
tr
a
i
nd
i
c
ate
d
t
ha
t
the
S
i
O
2
na
n
of
i
l
l
er
ha
d
s
tr
o
ng
p
h
y
s
i
c
a
l
i
nt
erac
ti
o
ns
w
i
t
h
the
S
i
R.
T
he
ad
di
t
i
o
na
l
p
ol
y
m
er
c
ha
i
ns
tha
t
wer
e
i
ns
ert
ed
i
n
to
th
e
S
i
O
2
c
on
f
i
n
ed
the
p
ol
y
m
er
na
no
s
c
op
i
c
a
l
l
y
.
T
he
i
nt
era
c
ti
on
be
t
wee
n
the
S
i
O
2
an
d
S
i
R
r
es
ul
t
ed
i
n
the
f
or
m
ati
on
of
a
h
i
g
hl
y
order
ed
s
tr
uc
ture
d
ue
to
t
h
e
pres
en
c
e
of
ne
i
gh
b
ou
r
i
ng
c
h
ai
ns
th
at
s
urr
ou
nd
e
d
m
ob
i
l
e
S
i
R
c
ha
i
ns
.
He
nc
e,
m
ol
ec
ul
ar
orie
nt
ati
on
of
the
c
ha
i
ns
b
ec
am
e h
i
gh
er
,
an
d f
urther
ad
d
i
ti
on
al
c
r
os
s
l
i
nk
s
i
n t
h
e s
y
s
tem
were f
orm
ed
[2
9].
F
r
o
m
th
e e
l
ec
tr
i
c
a
l
tr
ee
i
m
ag
es
, a
de
ns
el
y
pa
c
k
ed
el
ec
tr
i
c
al
tr
ee
s
tr
uc
t
ure
was
ob
s
erv
ed
when
t
he
am
ou
nt
of
S
i
O
2
i
n
S
i
R
i
nc
r
ea
s
e
d.
T
he
f
or
m
ati
on
of
the
de
ns
el
y
pa
c
k
ed
t
r
ee
s
tr
uc
ture
c
ou
l
d
c
a
us
e
the
e
l
ec
tr
i
c
al
tr
ee
s
to
b
e
di
ff
i
c
ul
t
to
i
n
i
ti
ate
i
n
th
e
S
i
R
m
atri
c
es
.
T
he
r
ef
ore,
the
tr
e
e
i
nc
ep
t
i
on
v
o
l
ta
ge
s
f
or
al
l
the
S
i
R/
S
i
O
2
na
n
oc
om
po
s
i
tes
w
er
e
h
i
gh
er
c
o
m
pa
r
ed
w
i
th
the
u
nf
i
l
l
ed
S
i
R.
In
ad
di
t
i
o
n,
S
i
O
2
n
an
of
i
l
l
er
i
ts
el
f
c
ou
l
d
a
l
s
o
b
e
th
e
k
e
y
f
ac
tor
c
on
tr
i
bu
t
i
n
g
to
t
he
hi
g
he
r
tr
ee
i
nc
ep
t
i
on
v
ol
t
ag
es
an
d
l
on
ge
r
tr
e
e
bre
ak
do
wn
t
i
m
es
of
the
S
i
R
/S
i
O
2
n
an
oc
o
m
po
s
i
tes
(
up
to
5
w
t%
of
S
i
O
2
l
oa
di
n
g
l
ev
e
l
s
)
tha
n
the
un
f
i
l
l
e
d
S
i
R.
T
he
pres
e
nc
e
of
S
i
O
2
na
no
f
i
l
l
er
c
o
ul
d
s
l
o
w
do
w
n
t
he
e
l
ec
tr
i
c
al
tr
ee
propa
ga
t
i
on
proc
es
s
s
i
nc
e
the
na
no
f
i
l
l
er
c
ou
l
d
s
er
v
e
as
ph
y
s
i
c
a
l
ob
s
tac
l
es
to
c
urb
th
e
gro
w
t
h
of
th
e
e
l
ec
tr
i
c
a
l
tr
ee
i
n
g.
In
th
i
s
r
eg
ard,
t
he
el
ec
tr
i
c
al
tr
e
es
are
ex
pe
c
ted
to
gr
o
w
a
l
on
g t
h
e
s
urf
ac
e o
f
th
e S
i
O
2
na
no
f
i
l
l
er
.
Me
an
wh
i
l
e
,
th
e
pres
e
nc
e
of
S
i
O
2
n
an
of
i
l
l
er
i
n
S
i
R
c
ou
l
d
c
r
ea
te
tr
ap
p
i
n
g
s
i
t
es
.
S
i
O
2
na
no
f
i
l
l
ers
c
ou
l
d
tr
ap
c
ha
r
ge
c
arr
i
ers
f
r
o
m
the
ne
ed
l
e
el
ec
tr
o
de
s
af
ter
the
hi
g
h
v
o
l
tag
e
w
as
ap
p
l
i
e
d.
T
he
tr
ap
pe
d
c
ha
r
ge
c
arr
i
ers
r
eq
u
i
r
ed
hi
g
h
en
erg
y
to
m
ov
e
f
r
om
on
e
tr
ap
to
a
no
t
he
r
tr
ap
.
S
o,
t
he
el
ec
tr
i
c
al
c
ha
r
ge
m
ob
i
l
i
t
y
was
r
ed
uc
ed
du
e
to
th
e
pres
en
c
e
of
th
e
tr
ap
pi
n
g
s
i
tes
.
T
he
r
ed
uc
ti
on
of
el
ec
tr
i
c
al
c
ha
r
ge
c
arr
i
er
m
ob
i
l
i
t
y
a
l
on
g
th
e
n
an
of
i
l
l
er
an
d
S
i
R
i
nt
erf
ac
es
c
ou
l
d
be
a
m
aj
or
f
ac
tor
i
n
i
m
pr
ov
i
ng
t
he
d
i
el
ec
tr
i
c
prop
erti
es
an
d
c
au
s
i
n
g
the
gro
wth
of
el
ec
tr
i
c
a
l
tr
ee
i
n
g
to
be
c
om
e
s
l
o
wer
f
or
the
n
an
oc
om
po
s
i
te
s
am
pl
es
c
on
ta
i
n
i
ng
u
p
t
o
5
w
t%
of
S
i
O
2
na
no
f
i
l
l
er
[30
]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
◼
IS
S
N: 16
93
-
6
93
0
T
E
L
KO
M
NIK
A
V
ol
.
1
7
,
No
.
6
,
D
ec
em
be
r
2019
:
29
0
3
-
2911
2910
A
m
on
g
th
e
na
n
oc
om
po
s
i
te
s
a
m
pl
es
,
t
he
s
am
pl
e
wi
th
5
w
t%
of
S
i
O
2
s
ho
w
e
d
the
h
i
gh
es
t
r
es
i
s
tan
c
e
to
el
ec
tr
i
c
al
tr
e
ei
ng
.
T
hi
s
s
ho
w
s
th
at
an
ap
p
r
op
r
i
at
e
l
oa
di
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of
S
i
O
2
na
n
op
arti
c
l
es
c
a
n
ef
f
ec
ti
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y
s
up
pres
s
t
he
gro
w
t
h
of
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el
ec
tr
i
c
al
tr
ee
.
F
o
r
the
na
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s
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te
s
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es
c
on
ta
i
n
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ng
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w
t%
a
nd
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wt%
of
S
i
O
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ho
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er
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m
uc
h
s
ho
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ter
e
l
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c
al
tr
ee
bre
ak
do
w
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t
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m
e
s
an
d
m
uc
h
hi
g
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gro
w
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h
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ate
s
w
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ec
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hi
s
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l
d
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e
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gg
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erated
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tr
uc
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i
O
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no
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r
t
i
c
l
es
w
i
t
hi
n
the
na
no
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om
po
s
i
te
s
am
pl
es
.
S
ev
ere
na
n
of
i
l
l
er
ag
g
l
om
erati
o
ns
,
as
de
p
i
c
ted
i
n
F
i
gu
r
es
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(
d)
an
d
7
(
e),
c
ou
l
d
r
es
u
l
t
i
n
a
m
uc
h
s
ho
r
ter
pa
th
f
o
r
a
tr
e
e
to
prop
ag
at
e
thro
ug
h
the
a
gg
l
om
erated
S
i
O
2
s
urf
ac
es
.
5.
Co
n
clusion
In
the
i
nv
es
ti
g
ate
d
S
i
R/S
i
O
2
na
no
c
om
po
s
i
tes
up
to
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t%
of
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i
O
2
l
oa
d
i
n
g
l
ev
e
l
s
,
the
e
l
ec
tr
i
c
a
l
tr
e
e
gro
w
t
h
was
s
l
o
w
er
c
om
pa
r
ed
wi
t
h
the
un
f
i
l
l
e
d
S
i
R.
T
he
a
dd
i
t
i
o
n
of
S
i
O
2
na
no
f
i
l
l
er
i
n
S
i
R
c
ou
l
d,
t
he
r
ef
ore,
ac
t
as
an
i
n
hi
b
i
tor
t
o
r
eta
r
d
th
e
gr
o
w
th
of
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e
c
tr
i
c
al
tr
e
ei
n
g.
F
T
IR
r
es
ul
ts
s
ho
wed
t
ha
t
the
S
i
O
2
n
an
of
i
l
l
er
c
ou
l
d
ha
v
e
go
o
d
ph
y
s
i
c
a
l
i
nt
erac
ti
on
s
wi
th
the
s
tr
uc
ture
of
the
S
i
R.
F
r
om
the
r
es
ul
ts
of
the
el
ec
tr
i
c
al
tr
ee
i
nc
ep
t
i
on
v
o
l
ta
ge
,
t
r
ee
break
do
w
n
ti
m
e,
tr
ee
propag
a
ti
on
l
e
ng
th
an
d
tr
e
e
gro
w
th
r
at
e,
S
i
R/S
i
O
2
n
an
oc
om
po
s
i
tes
(
up
to
5
w
t%
of
SiO
2
l
oa
di
ng
l
e
v
e
l
s
)
s
ho
wed
a
dv
an
t
ag
e
ou
s
e
l
ec
tr
i
c
al
tr
ee
c
h
arac
teri
s
t
i
c
s
c
om
pa
r
ed
wi
th
the
u
nf
i
l
l
ed
S
i
R.
F
r
o
m
the
c
urr
en
t
w
ork
,
5
wt%
of
S
i
O
2
l
oa
d
i
n
g
w
as
i
de
nti
f
i
ed
as
th
e
op
t
i
m
u
m
a
m
o
un
t
f
or
the
S
i
R/S
i
O
2
na
n
oc
om
po
s
i
tes
.
T
hi
s
na
n
oc
om
po
s
i
te
f
orm
ul
ati
on
r
es
ul
t
ed
i
n
a
de
s
i
r
ab
l
e
e
l
ec
tr
i
c
a
l
tr
ee
r
es
i
s
t
a
nc
e
p
erf
or
m
an
c
e
c
om
pa
r
ed
wi
th
oth
er
i
n
v
es
ti
ga
t
ed
s
am
pl
es
.
T
he
r
ef
ore,
i
t
i
s
ge
ne
r
al
l
y
en
v
i
s
ag
e
d
t
ha
t
S
i
R/
S
i
O
2
n
an
oc
om
po
s
i
tes
wi
th
5
w
t%
of
S
i
O
2
am
ou
nt
l
e
v
el
c
an
b
e
uti
l
i
z
ed
as
e
l
ec
tr
i
c
a
l
i
ns
u
l
at
i
ng
m
ate
r
i
al
s
f
or
i
m
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i
ng
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he
d
i
s
c
ha
r
ge
r
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s
ta
nc
e p
e
r
f
or
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an
c
e a
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i
nc
r
ea
s
i
ng
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i
ns
ul
ati
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l
i
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e o
f
th
e s
i
l
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c
on
e rub
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i
ns
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l
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ate
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l
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uth
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s
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M
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Tra
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IEE
Pr
o
c
.
S
c
i
.
M
e
a
s
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T
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c
h
n
o
l
.
2003
;
1
5
0
(
2
)
:
58
–
6
4
.
[8
]
Ari
e
f
Y
Z,
I
s
m
a
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M
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M
Z,
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NA
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o
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M
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2014
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In
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l
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Con
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n
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IC)
2
0
0
9
.
2
0
0
9
:
514
–
5
2
3
.
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4
]
Rae
tz
k
e
S,
Ki
n
d
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rs
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e
rg
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r
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.
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e
o
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s
.
IEEE
Tra
n
s
.
Di
e
l
e
c
tr.
El
e
c
tr.
I
n
s
u
l
.
2
0
1
0
;
17
(
2
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:
607
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614.
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5
]
Fre
c
h
e
tt
e
M
F,
Ree
d
C
W
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T
h
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tr
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s
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a
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Re
p
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rt
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fe
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e
o
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l
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tri
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l
In
s
u
l
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ti
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a
n
d
Die
l
e
c
tri
c
P
h
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n
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m
e
n
a
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CEIDP
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Sc
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d
l
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r
L
S
.
In
t
e
rfa
c
i
a
l
c
h
a
rg
e
b
e
h
a
v
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o
r
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n
n
a
n
o
d
i
e
l
e
c
tri
c
s
.
2
0
0
9
IEEE
Con
fe
re
n
c
e
o
n
El
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tr
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n
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.
2
0
0
9
:
6
5
0
–
6
5
3
.
[1
7
]
T
u
n
c
e
r
E,
Sa
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.
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d
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tri
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s
.
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l
e
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tri
c
Po
l
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m
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r
Nan
o
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o
m
p
o
s
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te
s
.
2
0
1
0
:
3
2
1
–
3
3
8
.
[1
8
]
Ii
z
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k
a
T
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O
h
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Y
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T
a
n
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k
a
T
.
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e
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s
u
l
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g
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a
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l
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M
2
0
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),
IEEE
In
t
e
rn
a
ti
o
n
a
l
Sy
m
p
o
s
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u
m
.
2
0
0
8
:
60
-
63
.
[1
9
]
Sri
d
h
a
r
A,
T
h
o
m
a
s
M
J
.
El
e
c
tr
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c
a
l
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e
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n
g
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n
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c
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ti
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a
n
d
g
ro
wth
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h
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l
ta
g
e
En
g
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n
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ri
n
g
a
n
d
Ap
p
l
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c
a
ti
o
n
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.
2
0
1
0
IEEE
In
t
e
rn
a
t
i
o
n
a
l
C
o
n
fe
re
n
c
e
.
2010
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[2
0
]
Nie
d
e
rn
h
u
b
e
r
J
,
Ki
n
d
e
rs
b
e
rg
e
r
J
.
El
e
c
tri
c
a
l
tre
e
i
n
g
i
n
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s
u
l
a
ti
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n
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wit
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c
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n
a
n
o
fi
l
l
e
rs
.
So
l
i
d
Die
l
e
c
tri
c
s
(I
CSD
)
.
2
0
1
3
I
EEE
In
te
rn
a
ti
o
n
a
l
Co
n
fe
re
n
c
e
.
2
0
1
3
:
828
-
831
.
[2
1
]
Du
BX
,
M
a
ZL
,
G
a
o
Y
,
Han
T
,
X
i
a
Y
S
.
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ts
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l
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n
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l
e
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tr
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o
m
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2
0
1
1
An
n
u
a
l
Rep
o
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t
Con
f
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re
n
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e
.
2
0
1
1
:
7
8
8
-
7
9
1
.
[2
2
]
Vl
a
s
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o
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ri
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E
.
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e
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o
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e
d
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o
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ti
n
g
s
.
IEEE
Tra
n
s
.
Po
wer
D
e
l
i
v
.
1
9
9
0
;
5
(
4
)
:
2030
–
2
0
3
8
.
[2
3
]
Su
w
a
rn
o
,
Pra
to
m
o
s
i
w
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F
.
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p
p
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c
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d
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n
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e
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o
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e
2
0
0
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t
e
rn
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t
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o
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l
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n
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re
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tri
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a
l
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g
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n
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s
,
ICEEI
2
0
0
9
.
2
0
0
9
;
2
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5
8
7
.
[2
4
]
J
u
n
g
SY
,
Ki
m
BK
.
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p
a
ra
t
i
o
n
a
n
d
Ch
a
ra
c
te
ri
s
ti
c
s
o
f
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g
h
Vo
l
ta
g
e
L
i
q
u
i
d
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l
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e
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b
e
r
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y
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o
d
i
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d
Cro
s
s
-
l
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n
k
i
n
g
A
g
e
n
t.
Tra
n
s
.
El
e
c
tr.
El
e
c
tr
o
n
.
M
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r
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2009
;
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:
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–
15.
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5
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M
a
YQ
,
W
u
F
L
,
X
u
C.
Non
l
i
n
e
a
r n
u
m
e
ri
c
a
l
a
n
a
l
y
s
i
s
o
f
h
i
g
h
v
o
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ta
g
e
c
a
b
l
e
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e
rm
i
n
a
l
r
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b
b
e
r
s
t
re
s
s
c
o
n
e
.
M
e
c
h
a
n
i
c
Au
t
o
m
a
ti
o
n
a
n
d
C
o
n
tro
l
En
g
i
n
e
e
ri
n
g
(M
ACE),
2
0
1
1
Se
c
o
n
d
In
te
r
n
a
ti
o
n
a
l
Con
fe
re
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c
e
.
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-
459.
[2
6
]
Du
BX
,
G
a
o
Y
.
G
ro
w
c
h
a
r
a
c
te
ri
s
t
i
c
s
o
f
e
l
e
c
tri
c
a
l
tre
e
i
n
s
i
l
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c
o
n
e
ru
b
b
e
r
.
Pro
c
e
e
d
i
n
g
s
o
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e
1
6
t
h
In
te
rn
a
ti
o
n
a
l
Sy
m
p
o
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u
m
o
n
H
i
g
h
Vo
l
t
a
g
e
En
g
i
n
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e
r
i
n
g
.
2
0
0
9
:
1
–
4.
[2
7
]
Ah
m
a
d
M
H,
Ah
m
a
d
H,
Ba
s
h
i
r
N,
Ari
e
f
Y
Z,
Ab
d
u
l
-
M
a
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e
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Z,
Ku
rn
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s
o
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F
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A
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Sta
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l
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ro
a
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Ep
o
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Res
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A
C
Ram
p
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l
ta
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e
.
In
t.
J
.
El
e
c
tr.
E
n
g
.
In
f
o
rm
a
ti
c
s
.
2
0
1
2
;
4
(
1
)
:
27
–
39.
[2
8
]
G
o
ru
r
RS
.
Ac
c
e
l
e
ra
t
e
d
a
g
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n
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o
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c
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El
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tr
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n
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n
d
Di
e
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e
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tri
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Ph
e
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o
m
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n
a
.
1
9
8
9
:
155
–
1
6
0
.
[2
9
]
Bi
ti
n
i
s
N,
Hern
á
n
d
e
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,
V
e
rd
e
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o
R,
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e
n
n
y
J
M
,
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o
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a
n
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A
.
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e
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d
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n
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e
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n
Cla
y
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y
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r Na
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o
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p
o
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s
.
Ad
v
.
M
a
te
r
.
2
0
1
1
;
23
(
44
)
:
5
2
2
9
–
5
2
3
6
.
[3
0
]
Dan
i
k
a
s
M
G
,
T
a
n
a
k
a
T
.
Nan
o
c
o
m
p
o
s
i
te
s
-
a
re
v
i
e
w
o
f
e
l
e
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tri
c
a
l
tr
e
e
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n
g
a
n
d
b
re
a
k
d
o
w
n
.
IE
EE
El
e
c
tr
.
In
s
u
l
.
M
a
g
.
2009
;
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:
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–
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.
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