Int
ern
at
i
onal
Journ
al of Ele
ctrical
an
d
Co
mput
er
En
gin
eeri
ng
(IJ
E
C
E)
Vo
l.
10
,
No.
3
,
June
2020
,
pp.
2313
~
2321
IS
S
N: 20
88
-
8708
,
DOI: 10
.11
591/
ijece
.
v10
i
3
.
pp2313
-
23
21
2313
Journ
al h
om
e
page
:
http:
//
ij
ece.i
aesc
or
e.c
om/i
nd
ex
.ph
p/IJ
ECE
Accur
ate l
ea
k
age cur
re
n
t models
for MOS
FET
nanoscal
e devi
ce
s
Ab
d
ou
l
Rjou
b
1
, Mam
ou
n
A
l
-
Mis
ta
ri
hi
2
, N
edal
Al Tar
adeh
3
1
Depa
rtment
Co
m
pute
r
Engi
n
ee
r
ing,
Jordan
Univ
ersity
of
Sci
enc
e
and
Technol
og
y
Irbid,
Jordan
2
,3
Depa
rtment
of
Elec
tr
ical Engi
n
ee
ring
,
Jordan
U
nive
rsit
y
of
Sci
e
nce
and Technol
og
y
Irbid,
Jorda
n
Art
ic
le
In
f
o
ABSTR
A
CT
Art
ic
le
history:
Re
cei
ved
Ma
y
31, 201
9
Re
vised N
ov 25, 2
0
19
Accepte
d De
c
9,
2019
Thi
s
pape
r
unde
rli
nes
a
c
losed
f
orm
of
M
OS
FE
T
tra
nsistor’s
lea
kage
cur
r
ent
m
ec
hani
sm
s
in
t
he
sub
100n
m
par
adi
gm
.
The
in
co
rpora
ti
on
of
dra
i
n
induc
ed
bar
rie
r
l
oweri
ng
(DIBL),
Gate
I
nduce
d
Drain
L
oweri
ng
(GID
L)
and
bo
d
y
eff
ect
(
m
)
on
the
sub
-
thre
shol
d
le
aka
g
e
(
I
sub
)
was
inve
stiga
t
ed
i
n
detail.
The
Band
-
To
-
Ba
nd
Tunne
l
ing
(
I
B
TB
T
)
due
to
the
s
ourc
e
and
Dr
ai
n
PN
rev
erse
junc
ti
on
wer
e
al
so
m
odel
ed
with
a
cl
ose
and
ac
cur
at
e
m
odel
using
a
recta
ngul
ar
ap
proximati
on
m
ethod
(RJA
).
The
thre
e
t
y
p
es
of
gat
e
l
ea
k
ag
e
(
I
G
)
were
al
so
m
odel
ed
and
an
aly
z
ed
for
par
as
it
ic
(
I
GO
),
inv
ers
ion
cha
nne
l
(
I
GC
),
and
ga
te
subs
tra
te
(
I
GB
).
In
addi
ti
on
,
the
le
aka
g
e
resour
ce
s
due
to
the
aggr
essive
red
uct
i
on
in
the
oxide
th
ic
kness
(<5nm)
have
be
en
inve
stigated
.
Si
m
ula
ti
on
r
esults
using
HS
PI
CE
exhi
b
it
s
a
tre
m
endous
agr
e
ement
with
the
BS
IM4
m
odel
.
Th
e
dom
ina
n
t
va
lue
o
f
th
e
su
b
-
thre
shold
le
ak
age
was
due
to
the
DIBL
an
d
GID
L
eff
ec
ts.
Vari
ous
rec
om
m
enda
ti
ons
reg
ard
ing
m
ini
m
iz
ing
the
leaka
g
e
cur
r
ent
at
both
device
le
v
el
an
d
the
ci
r
cuit
le
ve
l
wer
e
sugge
sted
a
t
th
e end
o
f
thi
s
p
ape
r
.
Ke
yw
or
d
s
:
Gate in
du
ce
d d
rain
l
ow
e
rin
g
Leaka
ge
c
urre
nt m
echan
ism
s
Lo
w power
d
e
vices
Shor
t c
ha
nn
el
eff
ect
Subth
reshold
le
akag
e
curr
ent
Copyright
©
202
0
Instit
ut
e
o
f Ad
vanc
ed
Engi
n
ee
r
ing
and
S
cienc
e
.
Al
l
rights re
serv
ed
.
Corres
pond
in
g
Aut
h
or
:
Abd
ou
l R
joub
,
Com
pu
te
r
E
ng
i
neer
i
ng D
e
par
t
m
ent
,
Jo
r
da
n Un
i
ver
s
it
y of
Scie
nce
and Tec
hnolog
y
,
Un
i
ver
sit
y C
a
m
pu
s,
I
rb
i
d 22110, P.
O. Bo
x. 30
30
,
Jordan
.
Em
a
il
:
abdoul
@just.
edu
.
jo
1.
INTROD
U
CTION
R
e
c
e
nt
l
y
,
n
a
n
o
s
c
a
l
e
C
M
O
S
d
e
v
i
c
e
s
h
a
v
e
a
t
r
e
m
e
n
d
o
u
s
d
e
m
a
n
d
f
o
r
low
p
o
w
e
r
/
h
i
g
h
-
p
e
r
f
o
r
m
a
n
c
e
a
p
p
l
i
c
a
t
i
o
n
s
[
1
]
.
T
h
i
s
d
e
m
a
n
d
w
i
l
l
r
e
m
a
i
n
i
n
c
r
e
a
s
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n
g
b
e
c
a
u
s
e
o
f
t
h
e
p
r
o
m
i
s
i
n
g
e
l
e
c
t
r
o
c
h
e
m
i
c
a
l
p
r
o
p
e
r
t
i
e
s
o
f
S
i
s
e
m
i
c
o
n
d
u
c
t
o
r
,
a
m
o
n
g
t
h
o
s
e
pr
o
p
e
r
t
i
e
s
,
l
o
w
p
o
w
e
r
,
h
i
g
h
-
p
e
r
f
o
r
m
a
n
c
e
o
p
e
r
a
t
i
o
n
,
h
i
g
h
-
s
p
e
e
d
s
w
i
t
c
h
i
n
g
,
a
n
d
i
t
s
i
m
m
u
ni
t
y
t
o
p
hysic
al
v
a
r
i
a
t
i
o
n
[
2
]
.
M
e
a
n
w
h
i
l
e
,
v
a
r
i
o
u
s
l
i
t
e
r
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t
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r
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s
t
u
d
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d
t
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n
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n
o
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a
l
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C
M
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r
a
n
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i
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'
s
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v
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n
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l
s
f
o
r
c
i
r
c
u
i
t
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m
ul
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t
i
o
n
s
[
3
]
.
T
h
e
l
e
a
k
a
g
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c
u
r
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n
t
i
s
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n
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m
a
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na
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F
E
T
t
r
a
n
s
i
s
t
o
r
(
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o
u
r
c
e
,
G
a
t
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a
n
d
D
r
a
i
n
)
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h
i
s
c
u
r
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n
t
i
s
c
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u
s
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b
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he
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h
o
r
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h
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n
n
e
l
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f
f
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c
t
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S
C
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n
d
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f
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c
t
s
t
h
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o
v
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r
a
l
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a
v
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r
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n
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s
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o
r
.
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h
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v
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t
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k
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g
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h
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c
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s
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t
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k
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om
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t
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o
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/
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v
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r
l
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p
r
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g
i
o
n
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I
GO
)
a
nd
w
h
i
c
h
c
r
e
a
t
e
s
t
w
o
c
u
r
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n
t
s
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GSO
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n
d
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I
G
D
O
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t
h
e
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a
t
e
t
o
t
h
e
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n
v
e
r
t
e
d
C
h
a
n
n
e
l
L
e
a
k
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ge
(
I
GC
)
w
h
i
c
h
h
a
v
e
t
w
o
p
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r
t
s
(
I
G
C
S
)
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n
d
(
I
GCD
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,
a
n
d
t
h
e
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a
t
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t
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t
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e
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u
b
s
t
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a
t
e
L
e
a
k
a
g
e
c
u
r
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e
n
t
(
I
GB
)
[
4
]
.
T
h
e
B
a
n
d
-
to
-
B
a
n
d
t
u
n
n
e
l
i
ng
c
u
r
r
e
n
t
i
s
c
a
u
s
e
d
b
y
t
h
e
h
i
g
h
e
l
e
c
t
r
i
c
f
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e
l
d
d
u
r
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n
g
t
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e
s
t
a
n
d
b
y
n
o
d
e
b
e
t
w
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n
t
h
e
d
r
a
i
n
a
n
d
t
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d
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p
l
e
t
i
o
n
l
a
y
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r
.
T
h
e
h
i
g
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r
v
a
l
u
e
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f
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d
r
a
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n
v
o
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t
a
g
e
(
>
d
e
p
l
e
t
i
o
n
l
a
y
e
r
v
o
l
t
a
g
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)
a
l
l
o
w
s
t
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l
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c
t
r
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n
s
t
o
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n
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om
t
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N
j
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n
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p
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p
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m
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t
i
o
n
[
5
]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
10
, No
.
3
,
J
une
2020
:
23
13
-
2321
2314
T
h
e
r
e
a
r
e
t
w
o
t
y
p
e
s
o
f
B
a
nd
-
to
-
B
a
n
d
T
u
n
n
e
l
i
n
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c
u
r
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n
t
(
I
B
T
B
T
)
,
o
n
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f
l
o
w
s
f
r
o
m
t
h
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n
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c
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s
h
o
w
n
i
n
[
5
]
.
K
a
u
s
h
i
k
R
o
y
e
t
e
t
.
a
l
.
[
5]
h
a
d
v
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r
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o
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s
c
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r
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b
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c
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l
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d
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v
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c
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,
K
.
M
.
C
a
o
[
6
]
p
r
o
p
o
s
e
d
a
m
o
d
e
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f
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r
g
a
t
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M
4
m
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Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
10
, No
.
3
,
J
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2020
:
23
13
-
2321
2316
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2
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it
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us
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10]
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13]
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lo
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3.
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Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
10
, No
.
3
,
J
une
2020
:
23
13
-
2321
2318
Figure
2.
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Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Accur
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8708
In
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financi
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by
EU,
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7,
In
c
o,
ER
A
-
WIDE
“JE
W
EL”,
Pro
j
ect
No.
266507
.
REFERE
NCE
S
[1]
J.
Murali
dhar
an
P.
Manimegal
a
,
“
Curre
nt
Com
par
ison
Dom
ino
base
d
CHS
K
Do
m
ino
Logi
c
T
echnique
for
Rap
i
d
Progress
ion
and
Low
Pow
er
Alle
vi
at
ion
,
”
In
te
rnational
Jou
rnal
of
E
lectri
cal
and
Comp
ute
r
Engi
n
ee
rin
g
,
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M.
Madhusudhan
Redd
y
,
M.
Sa
il
aja,
K.
Babu
lu
,
“
Ene
rg
y
op
ti
m
iz
a
ti
on
of
6
T
S
RAM
ce
ll
using
low
-
volt
ag
e
an
d
high
-
per
form
ance
inv
ert
er
struc
ture
s
,
”
Int
ernat
ional
Journal
o
f
Elec
tric
al
an
d
Computer
En
gine
ering
,
9(3)
,
1606~1619
,
201
9
.
[3]
Am
ine
Mohammed
Ta
ber
ki
t,
Ahlam
Guen
-
Bouaz
z
a,
B
en
y
oun
es
Bouaz
z
a
,
“
Modeli
ng
and
Sim
ula
ti
on
of
Biaxia
l
Strai
ned
P
MO
SF
ET
s:
Applic
a
ti
on
to
a
Singl
e
and
Dua
l
Ch
anne
l
He
te
rostr
uct
ure
,
”
In
te
rna
ti
onal
Journal
of
El
e
ct
rica
l
and
C
omputer
Engi
n
e
ering,
8(1)
,
421
-
428
,
2018
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[4]
Rashm
i
Singh,
Raj
esh
Mehr
a
,
“
Low
Noise
Am
pli
fier
using
Dar
li
ngton
Pa
ir
At
90nm
Te
chnol
o
g
y
,
”
Int
ernati
on
al
Journal
of
Elec
t
rical
and
Computer
Eng
ine
ering
,
8(4)
,
2054
-
2062
,
2018
.
[5]
Kaushik
Ro
y
,
Saibal
Mukhopadh
y
a
y
,
“
Le
ak
age
Curre
nt
Mec
han
ism
s
and
Le
aka
ge
Reduc
t
ion
Te
c
hnique
s
in
Dee
p
-
Sub m
ic
rom
et
er CM
OS
Circ
uit
s
,
”
Journal
proce
e
dings of
the IE
E
E
,
91(
2);
305
-
3
27
,
2003
.
[6]
K.
M.
Cao
et
al
.,
“
BS
IM4
gat
e
le
ak
age
m
odel
i
ncl
uding
sour
ce
-
dra
in
p
art
i
ti
on
,
”
Int
ernati
onal
El
e
ct
ron
Dev
ice
s
Me
eting
2000
.
T
ec
hni
cal
Dig
est.
IEDM
(
Cat.
No.
00CH37138)
,
San
Franc
isco
,
CA
,
US
A,
815
-
818
,
2000
.
[7]
Udit
Monga,
To
r
A.
Fjel
dl
y
,
Co
mpact
Subthreshold
Curr
ent
Mode
li
ng
of
Short
-
Channel
Nanosc
ale
Double
-
Gate
MOSFET
,
I
EE
E
Tr
ansacti
ons On E
l
ec
tron
Dev
i
ces
,
56(7),
1533
-
1
537
,
2009
.
[8]
J.
P.
Sun,
W
ei
W
ang;
Toru
To
y
ab
e
,
Ning
Gu;
Pi
naki
Mazum
de
r,
“
Modeli
ng
of
Gate
Curr
ent
an
d
Capaci
t
ance
in
Nanosca
le
-
MO
S Struc
tur
es
,
”
IE
E
E
Tr
ansacti
ons
on
Elec
tron
Dev
ic
es
,
53(12),
295
0
-
2957
,
2006
.
[9]
A.
Rastogi
,
W
.
Chen
and
S.
Ku
ndu,
“
On
Esti
m
at
ing
Im
pact
of
Loa
ding
Eff
e
ct
on
Le
ak
age
Cur
ren
t
in
Sub
-
65n
m
Scal
ed
CMO
S
Circ
uit
s
Based
on
Newton
-
Raphson
Method
;
44
th
ACM/
IEEE
Design
Aut
omation
Confe
renc
e
,
712
-
715
,
2007
.
[10]
Heung
Jun
Jeon,
Yong
-
Bin
Kim
,
“
A
Novel
Tech
nique
to
M
ini
mi
ze
Standby
Leak
age
Powe
r
in
N
anoscale
CMOS
VLSI
,”
I
EEE
Tr
ansacti
ons on
Inst
rum
ent
ati
on
and
Me
asur
eme
nt
,
5
9(5),
1127
-
1133
,
2010
.
[11]
Mark
Lundstro
m
,
“
Fundam
ent
al
s
of
C
arr
i
er
Trans
port
,
2
nd
Ed
it
i
on,
”
Cambr
idge
Unive
rs
it
y
Press
,
Cambr
idge,
U
K
,
2000
.
[12]
Chang
wook
Jeong,
Dim
it
ri
A.
Antonia
dis
,
and
Mark
S.
Lundstro
m
,
“
On
Bac
ksca
tt
eri
ng
and
Mobi
li
t
y
in
Nanosc
ale
Sili
con
m
osfets
,
”
IE
EE Tr
ansacti
ons On E
l
ectron Dev
i
ce
s
,
56(11
),
2762
-
2769
,
20
09
.
[13]
K.
Ro
y
,
e
t
al
,
“
Modeli
ng
and
Anal
y
s
is
of
Lo
ading
Eff
e
ct
in
Lea
kage
of
Nano
-
Sc
al
ed
Bu
lk
-
CMO
S
Logi
c
Cir
cuits
,
”
IEE
E
Proceedi
n
gs
of
the
Desig
n,
Au
tomati
on
and
Test
in
Eu
rope
Confe
ren
c
e
and
E
xhi
bi
ti
o
n
(
DATE’05
),
1,
224
-
229
,
2005
.
[14]
Abdoul
Rjoub,
Mam
oun
Mistar
ihi
,
Neda
l
Ta
r
ad
eh,
“
Basca
t
te
rin
g
Coeff
ic
i
ent
Acc
ura
te
Model
f
or
Nanosca
le
Si
-
MO
S
FET
Tr
ansi
stor,
”
I
EEE
F
aib
le
Tension
Fai
b
l
e
Consom
mation
,
June
20
-
21,
Par
is
-
Franc
e, 2013.
[15]
Abdoul
Rjoub,
“
Neda
l
Ta
rad
eh
and
Mam
oun
Mistari
hi
,
”
Gate
Le
aka
g
e
Curre
nt
Acc
ura
t
e
Models
for
Nanosca
le
MO
S
FET
Tra
ns
istors
;
The
24
th
Inte
rnationa
l
Workshop
on
P
ower
and
Timi
ng
Mode
l
ing
,
Optimiza
ti
o
n
an
d
Sim
ul
at
ion
(PA
TMOS
),
Palma
-
Mall
orc
a,
1
-
4
,
2
014
.
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Accur
ate leak
age c
ur
re
nt mo
de
ls f
or
M
O
SFE
T
na
no
sc
ale
de
vi
ces
(
Abdo
ul
Rjoub
)
2321
[16]
Abdoul
Rjoub,
Mam
oun
Al
-
Mi
stari
hi
,
“
Neda
l
Al
-
Ta
rad
eh,
Re
ce
nt
Tr
ansport
Models
in
Nanosca
le
MO
SF
ET
Tra
nsistor
–
St
ud
y
and
An
alys
is
,”
The
8
th
J
ordanian
Inte
rn
ati
onal
Elec
tri
c
al
and
El
e
ct
ro
nic
s
Eng
ine
erin
g
Confe
renc
e
,
Am
m
an
-
Jordan,
201
3.
[17]
Mam
oun
Al
-
Mi
stari
hi
,
Abdoul
Rjoub,
Neda
l
A
l
-
Ta
r
ade
h
,
“
A
New
Anal
y
t
ic
a
l
Model
of
Drain
Induc
ed
Barr
i
er
Lowe
ring
DIBL
in
Nanosca
le
Si
-
MO
S
FET
,”
t
he
25th
Inte
rna
ti
onal
Conf
ere
n
ce
on
Mic
ro
el
e
ct
ronics
(
ICM)
,
1
-
4,
2013
.
[18]
Abdoul
Rjoub,
Mam
oun
Al
-
Mistari
hi
,
Ned
al
A
l
-
Ta
r
ade
h
,
“
Trans
port
Mobili
t
y
and
Inj
ec
t
ion
V
el
oc
ity
Mode
l
f
or
Nanosca
le
MO
SF
ET
Tra
nsistor
,”
The
8
th
Jo
rdanian
Inte
rnational
Elec
tric
a
l
and
El
ectronic
s
Engi
ne
erin
g
Confe
renc
e
,
201
3.
[19]
Univer
sit
y
of
Ca
li
forni
a
a
t
B
erk
e
ley
,
htt
ps:
//
inst
.
e
ec
s.be
rk
ele
y
.
edu
/
[20]
Ahm
ed
Mah
m
o
od,
W
ahe
b
A.
Jabba
r,
Yasir
Hashim
,
Hadi
Bin
Mana
p,
“
Eff
ec
ts
of
downs
ca
li
ng
cha
n
ne
l
dimensionson
el
ectrical
ch
aracteristics
of
InAs
-
FinF
ET
tra
nsi
sto,
”
Int
ernati
o
nal
Journal
of
El
ectric
a
l
and
Computer
Engi
n
ee
ring
,
9(4), 290
2~2909,
Augus
t 2019
.
[21]
W
oo
W
ei
Kai,
Nabiha
h
b
int
i
Ahm
ad,
Moham
ad
Hair
ol
bin
Jab
bar
,
“
Vari
abl
e
Bod
y
B
ia
sing
(
VBB)
base
d
VL
SI
Design
Approac
h
to
Redu
ce
St
a
ti
c
Pow
er
,
”
In
ter
nati
onal
Journ
al
of
El
e
ct
rica
l
and
Computer
Engi
ne
ering
,
7(
6),
3010~3019,
Dec
ember
2017.
[22]
Hakke
e
Jung,
“
Thre
shold
vol
tage
roll
-
off
for
su
b
-
10nm
asy
m
m
e
tri
c
doub
le
ga
te
MO
S
FET,
”
In
ter
nati
onal
Journ
al
of
E
le
c
tric
al
and
Computer
Eng
i
nee
ring,
9(1), 16
3
-
169,
Feb
.
201
9.
[23]
H
Nanda
B.
S.
Putta
sw
am
y
P.S.
"
Modeli
ng
and
sim
ula
ti
o
n
of
gra
phene
fie
ld
eff
ect
tr
ansistor
(GF
ET
),
"
Inte
rnational
Jo
urnal
of El
e
ct
ri
c
al
and
Comput
er
Engi
n
ee
ring
,
9(
6),
4826
–
4835
,
Dec
ember
2019
.
[24]
Am
in
Boursali
,
Ahlam.
Guen,
Bouaz
za,
Choukria
Sa
y
ah,
"
DC
and
RF
ch
ara
c
te
rist
ic
s
of
20
nm
gat
e
le
ngth
InAlAs
/InGa
As
/
InP
HEMTs
for
high
fre
quency
appl
ic
a
ti
on
,
"
Inte
rnational
Jour
nal
of
El
ectric
a
l
and
Computer
Engi
ne
ering
(
IJ
ECE
)
,
10
(2)
,
12
48
-
1254,
April
2
020.
[25]
El
Beq
al
,
As
m
ae
,
Ba
chi
r
,
Benh
al
a
,
Iz
eddi
ne
Zo
rka
n,
"A
gen
et
i
c
al
gori
thm
for
t
he
opti
m
al
d
esig
n
of
a
m
ult
ist
ag
e
amplifi
er
,
"
Int
ernati
o
nal Journal
of El
e
ct
ri
cal
an
d
Computer
Eng
ine
ering
,
10
(1),
129
-
138,
Febru
a
r
y
2020.
BIOGR
AP
HI
ES OF
A
UTH
ORS
Dr.
Ab
dou
l
Rj
oub
is
IEE
E
Senior
Mem
ber
,
and
he
is
A
ss
oci
at
e
P
rof.
at
Co
m
pute
r
Engi
nee
r
ing
Depa
rtment
in
J
orda
n
Univer
sit
y
of
Scie
n
ce
a
n
d
Te
chnol
og
y
,
Jordan
since
201
0,
Dr.
Rjoub
is
coor
dinator
of
nat
ion
al
a
nd
Inte
rn
at
ion
al
proj
ects:
FP
7
-
JEW
EL
,
FP
7
-
MOSAI
C,
GREENBUILDIN
G.
Dr.
Rjoub
has
m
ore
tha
n
70
publi
cation
s
in
int
ern
a
ti
on
al
journ
al
s
and
conf
ere
n
ce
s,
h
is
m
ai
n
rese
arc
h
in
te
rests
include
b
ut
not
li
m
ited
to:
VLSI
Design
and
Applic
ations,
Low
Pow
er
Des
ign
Methodo
log
ie
s,
Mode
li
ng
T
ran
sistors,
Artif
i
ci
a
l
Int
el
l
ige
n
t
f
or
Low
Pow
er
Applic
a
ti
ons,
M
odel
ing
and
Sim
ula
ti
on
Tool
s
fo
r
Nano
el
e
ct
roni
cs.
Dr.
Abdoul
i
s
honore
d
the
4
th
pla
c
e
in
the
inter
nat
ion
al
st
at
i
c
t
i
m
ing
ana
l
y
sis
co
nte
st
2014
,
2
nd
p
la
c
e
in
MED
-
Hac
kat
hon
contest
2016.
Dr.
Rjoub
is
gene
ral
ch
ai
r
of
IEE
E
In
te
rna
ti
ona
l
Confer
ence
of
Mic
roe
lectr
oni
cs
of
(ICM32
nd
),
202
0.
Mam
oun
F.
Al
-
Mi
starihi
r
ec
e
i
ved
the
B.
Sc
.
a
nd
M.Sc.
degr
e
e
s
in
El
ectrical
E
ngine
er
ing
from
Jordan
Univer
si
t
y
of
Sc
ie
nc
e
and
T
ec
hnolog
y,
Irbid
,
Jordan
,
M.E
.
E.
and
Ph.D.
d
egr
ee
s
in
El
e
ct
ri
ca
l
Engi
n
ee
ring
from
Univer
sit
y
of
Min
nesota
,
Minn
ea
p
oli
s,
MN
,
US
A
,
in
1992,
1996,
2005,
and
2005,
respe
ctive
l
y
.
From
1994
to
2000,
he
was
with
the
Ro
y
al
Scie
nti
f
ic
Soci
ety
,
Amm
an,
Jordan
.
Presently
h
e
is
an
As
socia
te
Profess
or
with
the
E
lectr
ic
a
l
Engi
n
ee
rin
g
Depa
rtment,
Jordan
Univer
sit
y
of
Scie
nc
e
and
Te
chno
log
y
,
Irb
id,
Jordan
.
His
rese
arc
h
intere
st
s
inc
lud
e
digital
si
gnal
proc
essing,
image
proc
essing,
digital
signal
proc
essing
for
c
om
m
unic
at
ions,
wire
le
ss
comm
unic
at
ions
a
nd
m
obil
e
net
works
,
per
form
anc
e
eva
lu
ation
of
wire
less
comm
unic
at
ion
s
y
stems
over
fad
ing
cha
nn
el
s,
s
e
cur
ity
of
wire
l
ess
sy
st
ems
,
W
iMAX
,
wire
le
ss
Ad
Hoc
net
works
,
a
nd
wire
l
ess sensor ne
tworks
Nedal
Al
Tarad
eh,
a
Ph.
D
.
stud
ent
a
t
Univ
ersity
of
Sherbrooke
,
Cana
da
,
condu
cting
rese
arc
h
on
Design,
Fabric
a
t
ion,
and
Charact
eri
z
at
ion
of
V
ertical
GaN
power
tra
nsistors,
Neda
l
hold
s
his
M
S.c
in
el
e
ct
ri
cal
eng
ine
er
ing
from
J
orda
n
Univer
sit
y
of
Scie
n
ce
an
d
Te
chnol
og
y
a
nd
a
Bac
he
lor’s
Degre
e
in
Elec
t
ric
a
l
Engi
n
ee
r
in
g
from
Birz
eit
Univer
sit
y
Ram
al
l
ah,
Pa
le
stin
e
in
2009.
Ned
al
rese
arc
h
in
te
rest
i
s
Modeli
ng,
ME
MS
,
Nano
-
Fabri
ca
t
ion, a
nd
B
iosensors.
Evaluation Warning : The document was created with Spire.PDF for Python.