Int
ern
at
i
onal
Journ
al of Ele
ctrical
an
d
Co
mput
er
En
gin
eeri
ng
(IJ
E
C
E)
Vo
l.
8
, No
.
6
,
Decem
ber
201
8
, p
p.
4941
~
4950
IS
S
N: 20
88
-
8708
,
DOI: 10
.11
591/
ijece
.
v8
i
6
.
pp4941
-
49
50
4941
Journ
al h
om
e
page
:
http:
//
ia
es
core
.c
om/
journa
ls
/i
ndex.
ph
p/IJECE
E
ffect of
Chiralit
y
and O
xide
T
hi
kn
ess on the Pe
rform
ance
of a
Ballisti
c CNTFE
T
Asm
a
Lari
bi
,
Ah
lam
G
uen
Boua
z
z
a
Unit
of
R
ese
ar
ch
Mate
r
ia
ls
and
Rene
wabl
e Ene
rgi
es,
Dep
art
m
ent
o
f
Elec
tron
ic
s,
Fa
cul
t
y
of Tec
hno
l
og
y
,
Univer
sit
y
Abou
-
BakrBe
lk
ai
d,
A
lge
ri
a
Art
ic
le
In
f
o
ABSTR
A
CT
Art
ic
le
history:
Re
cei
ved
Dec
2
9
, 201
7
Re
vised
Ju
l
8
,
201
8
Accepte
d
J
ul
24
, 2
01
8
Since
the
dis
c
over
y
of
1D
n
ano
-
object,
they
ar
e
consta
n
tly
rev
ea
l
ing
signifi
c
ant
ph
y
s
ic
a
l
prope
r
ties.
In
thi
s
r
ega
rd
,
ca
rbon
n
anot
ub
e
(CNT)
is
conside
red
as
a
prom
ising
ca
ndi
dat
e
for
app
li
c
at
i
on
in
future
nan
oel
e
ct
roni
cs
devi
c
es
li
k
e
c
arb
on
nanot
ub
e
fi
eld
eff
e
ct
tra
nsisto
r
(CNTFET).
In
thi
s
work,
the
impact
of
chi
ral
i
t
y
and
gat
e
oxide
t
hikne
ss
on
th
e
el
e
ct
ri
ca
l
cha
ra
cteri
sti
cs
of
a
CNTFET
are
studie
d.
The
ch
i
ral
ities
used
are
(5,
0),
(10,
0),
(19,
0)
,
(26,
0),
and
th
e
gate
oxide
thi
kn
ess
var
ie
d
from
1
to
5
nm
.
Thi
s
work
is
base
d
o
n
a
num
eri
ca
l
sim
ula
ti
on
progra
m
ba
sed
on
surf
ac
e
pot
ent
i
al
m
odel
.
CNTFET
Modeli
ng
is
useful
for
sem
ic
onduct
or
industries
for
nano
sca
le
d
evice
s
m
anuf
acturi
ng
.
From
our
result
s
we
have
observ
ed
that
th
e
output
cur
r
ent
in
cre
ase
s
with
chiral
ity
inc
r
ea
sing
.
W
e
have
a
lso
highl
ighted
the
importa
nc
e
o
f
the
gate
ox
ide
t
hic
kness
on
the
dra
in
cur
ren
t
th
a
t
in
cre
ase
s
when
gate
ox
ide
is t
hin
.
Ke
yw
or
d:
Chyral
it
y
Cnt
Cntfet
Gate
o
xyde
t
hi
kn
e
ss
Nu
m
erical
s
i
m
ulti
on
Copyright
©
201
8
Instit
ut
e
o
f Ad
vanc
ed
Engi
n
ee
r
ing
and
S
cienc
e
.
Al
l
rights re
serv
ed
.
Corres
pond
in
g
Aut
h
or
:
Asm
a Laribi,
Un
it
of Rese
ar
ch
Ma
te
rial
s a
nd Rene
wa
ble
Energies
,
Un
i
ver
sit
y
A
bou
-
Ba
kr
Be
lkai
d,
Tlem
cen,
A
l
ge
ria BP
330 Tl
em
cen.
Em
a
il
:
la
r_
as
m
a@ya
hoo.f
r
1.
INTROD
U
CTION
The
pro
gr
e
ss
in
sil
ic
on
te
chnolo
gy
con
ti
nue
s
to
ou
tpace
th
e
histor
ic
pace
of
Moore'
s
Law,
but
the
end
o
f
de
vice
s
cal
ing
now
see
m
s
to
be
on
ly
10
-
15
ye
ars
aw
ay
[1
]
.
A
new
alt
ern
at
ive
ap
pe
ars
to
overc
om
e
all
these
lim
i
ta
ti
o
ns
.
O
ne
of
the
m
os
t
pr
om
isi
ng
areas
of
rese
arch
in
the
im
p
rovem
ent
of
transisto
rs
perf
orm
ance
is
the
us
e
of
c
arbo
n
na
no
t
ubes
(CNTs
)
that
is
con
side
re
d
tod
ay
as
the
m
os
t
i
m
po
rtan
t
new
m
at
erials
with
excell
ent
pro
pe
rtie
s
[2
]
beyo
nd
t
he
11
-
nm
t
echnolo
gy
no
de
du
e
to
it
s
superi
or
el
ect
rica
l
prop
e
rtie
s
of
CNTs
[3
]
a
nd
the
f
easi
bili
ty
of
us
in
g
t
hese
de
vices
to
buil
d
F
ET
tra
ns
is
tors
with
ge
om
et
rical
l
y
exc
el
le
nt
el
ect
ro
sta
ti
c
con
tr
ol.
The
pro
gr
ess
of
C
NT
FET
te
ch
no
l
ogy
and
the
un
de
rstan
ding
of
it
s
dev
ic
e
phys
ic
s
has
been ve
ry act
iv
e this la
st d
eca
de.
Ca
rbon
na
notu
be
s
wer
e
first
disco
ver
e
d
i
n
1991,
a
nd
bec
a
m
e
rap
idly
th
e
fo
c
us
of
m
uch
re
searc
h
act
ivit
y,
du
e
to
thei
r
e
xcep
ti
on
al
el
ect
rical
,
m
echan
ic
al
,
and
the
rm
al
pr
operti
es
[
4].
These
de
vices,
ideal
el
e
m
entary
com
po
nen
ts
f
or
the
reali
zat
ion
of
na
no
-
de
vices,
hav
e
t
he
p
ossi
bili
ty
of
bein
g
a
ble
to
be
sem
ic
on
duct
or
s
or
m
et
al
.
This
uniq
ue
pro
pe
rty
m
akes
the
carbo
n
nanotu
be
a
n
inte
resti
ng
can
did
at
e
f
or
the
m
anu
fact
ur
e
of
a
ne
w
el
ect
ro
nic
c
om
po
ne
nt
base
d
on
na
no
t
ub
e
s,s
uch
as
Ca
rbon
Na
noTu
be
Fiel
d
Eff
ect
Transi
stor
cal
le
d
C
NTF
E
T
[
5]
.
CNTFE
T
te
c
hnology
ca
n
be
cl
ubbe
d
with
bu
l
k
CM
O
S
te
chnolo
gy
on
a
sing
l
e
chip
a
nd
us
es
the
sa
m
e
infr
ast
r
uctur
e
al
l
ow
i
ng
to
pro
vid
e
im
pr
ov
e
m
ents
in
el
ectr
os
ta
ti
cs
over
CM
OS
te
chnolo
gy.
C
NTF
E
T
tran
sist
or
s
al
lo
w
m
oo
re’
s
La
w
s
us
ta
ining
t
o
en
sur
e
furthe
r
im
pr
ovem
ent
in
MOSFET
perform
ance.
I
t
is
ind
ispe
ns
a
ble
to
lo
ok
f
or
an
al
te
r
native
s
su
c
h
as
C
NT
FETs
that give
assu
ran
ce
to d
el
iver
m
uch
b
et
te
r pe
rfor
m
ance tha
n exist
in
g
MO
S
FETs
[6]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
8
, N
o.
6
,
Dece
m
ber
2
01
8
:
4941
-
4950
4942
It
is
al
so
i
m
po
rtant
to
recall
that
each
ne
w
node
ha
s
witne
ssed
the
inte
grat
ion
of
ne
w
m
at
erial
s
and
process
ste
ps
t
hat
will
achie
ve
the
obj
ect
ive
s
of
the
ITRS
r
oad
m
ap
of
SC
industries.
W
e
quote
am
on
go
thers
the
integ
rati
on
of
hi
gh
-
κ
diele
ct
rics
that
ca
n
reduces
ig
nifi
cantl
y
the
gate
le
akag
e
.
Me
c
han
ic
al
strai
n
app
li
ed
in
t
he
cha
nnel
and
s
ubstrat
e
or
ie
ntati
on
al
so
al
low
ca
rr
i
er
m
ob
il
it
y
i
mp
r
ovem
ent,
as
well
as
the
use
of
al
te
rn
at
ive
de
vi
ce
ge
om
et
ries,
su
c
h
as
doubl
e
-
gate
d
dev
ic
e
s.
Of
the
seve
r
al
str
uctu
res
s
tud
ie
d
s
o
far,
CNTs
hav
e
s
how
n
pa
rtic
ular
prom
i
se
due
t
o
thei
r
siz
e
an
d
uniq
ue
el
ect
r
on
ic
pro
per
ti
es.
Lat
el
y
CNTFE
T
s
ha
ve
been fa
br
ic
at
e
d succes
sf
ully
[6]
.
In
this
pa
per
,
we
ha
ve
discu
ssed
the
var
i
ous
sim
ulati
on
r
esults
[7
]
we
hav
e
st
udy
the
influ
e
nce
of
chirali
ty
and
gate
insu
la
to
r
thikn
ess
on
(I
-
V)
cha
ract
erist
ic
s
of
CN
TFET,
an
d
ob
serv
e
s
the
para
m
et
er
changin
g
e
flec
t
on
it
.
Be
si
de
s,
f
ur
t
her
anal
ysi
s
has
been
done
t
hroug
h
t
he
c
om
par
ison
of
'
the
oth
e
r
gro
up
to
j
ust
ify
r
es
ult.
2.
CARBO
N NANOTUBE
Ca
rbon
na
notu
bes
(CNT
s)
ha
ve
at
tract
ed
e
xt
ensive
at
te
ntio
n
because
of
th
ei
r
u
nique
pr
operti
es
[8]
,
Ca
rbon
Nanot
ub
e
s
wer
e
disc
ov
e
re
d
in
1991
by
S
um
io
Iijim
a
[9
]
.
C
NTs
are
m
ade
fr
om
cylindr
ic
al
carbo
n
m
olecules
[1
0]
,
CNTs
owning
rem
ark
able
physi
cal
prop
e
rtie
s,
are
la
rg
e
m
acro
m
olecules
that
are
un
i
qu
e
for
their
siz
e
a
nd
s
hap
e
.
T
hey
ar
e
al
lotropes
of
c
arbo
n
that
a
re
m
e
m
ber
s
of
th
e
fu
ll
ere
ne
struc
tural
fam
il
y,
wh
i
c
h
include
s
the
spherical
bucky
balls.
These
cy
li
nd
ers
of
car
bone
at
om
s
arr
ang
e
d
on
a
hone
y
-
com
b
la
ttic
e,
as
a
sing
le
la
ye
r
of
gr
a
ph
it
e
an
d
with
al
m
os
t
th
e
sa
m
e
near
est
-
nei
ghbor
C
-
C
sp
aci
ng
that
is
ac
-
c
=
1,
44
A°
.
CNTs
are,
in
f
act
m
ade
by
ro
ll
ing
up
of
she
et
of
gr
a
phen
e
into
a
cy
li
nd
er.
A
car
bon
na
no
t
ub
e
is
co
m
po
sed
of
one
or
m
or
e
gr
a
phene sh
ee
ts
ro
ll
ed
up
on it
sel
f,
desc
ribi
ng
a
t
ubular
ge
om
et
ry
as
sh
own
i
n
F
ig
ure
1.
These
nanostr
uctu
res
are
c
on
st
ru
ct
e
d
with
le
ngth
-
to
-
diam
et
er
rati
o
of
up
t
o
1.3
2
×
108
,
t
heir
di
a
m
et
er
is
in
t
he
orde
r
of
f
ew
nano
m
et
ers
[1
1
]
-
[
12
]
.
CN
Ts
ar
e
con
si
der
e
d
as
ver
y
pro
m
isi
ng
cand
i
da
te
s
in
the
f
ie
ld
of
nanoelec
tr
on
ic
s,
s
uch as C
NT
-
MOS
FE
Ts
de
vices.
Dep
e
ndin
g
on
the
nu
m
ber
of
co
nce
ntrica
ll
y
ro
ll
ed
-
up
gr
a
phene
s
hee
ts,
carbon
e
na
no
t
ub
e
s
are
cl
assifi
ed
to
si
ng
le
-
wall
ed
(
S
WNT),
a
nd
m
ulti
wall
ed
CN
Ts
(M
WNT)
,
wh
ic
h
c
onsist
of
a
si
ng
le
la
ye
r
of
gr
a
phene
sh
eet
w
r
ap
pe
d up to
for
m
a seam
less
tu
be
[13], as
presente
d
in
F
igure
1.
Figure
1. Ba
sic
stru
ct
ur
es
of
(
a) s
in
gle
-
wa
ll
ed,
a
nd
(b)
m
ult
i
-
wall
ed
C
NTs
S
WN
Ts,
prese
nted
her
e
,
are
m
or
e
pliable
than
M
WNTs
a
nd
ca
n
be,
flat
te
ned,
twist
ed
a
nd
be
nt
into
sm
a
ll
ci
rcles
or
ar
ound
sh
a
r
p
bends
withou
t
br
ea
king.
S
WNTsco
ns
ist
of
a
si
ng
le
la
ye
r
of
grap
he
ne
sh
eet
wr
a
pped
up
to
form
a
sea
m
l
ess
tu
be.
T
he
diam
e
te
r
an
dthe
helic
it
y
of
a
S
WN
T
a
re
de
f
ined
by
the
r
ol
l
-
up
vecto
r
cal
le
d
c
hiral
vecto
r
[
14]
g
i
ven b
y:
⃗
⃗
⃗
⃗
ℎ
=
1
+
2
(1)
Thi
s
ro
ll
-
up
ve
ct
or
c
onnects
cryst
al
lograp
hical
ly
equ
i
va
le
nt
sit
es
on
this
sh
eet
,
it
def
i
nes
th
e
ci
rcu
m
fer
ence
on
t
he
surface
of
the
t
ub
e
c
onnecti
ng
tw
o
e
qu
i
valent
car
bon
at
om
s
as
sh
own
in
Fi
gure
2
,
a
1
and a
2
are
the
gr
a
phene
lat
ti
c
e v
ect
ors.
T
he
se
unit
v
ect
or
s
of the
h
e
xa
gona
l l
at
ti
ceca
n
be
by
[
15
]
:
a
1
=
(
3/2a
c
-
c
,
√
3/2
a
c
-
c
)
(2)
a
2
=
(
3/2a
c
-
c
,
√
-
3/
2a
c
-
c
)
(3)
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Eff
ect
o
f C
hiral
it
y a
nd O
xi
de Thikne
ss
on th
e Perfor
m
an
ce
o
f
a
B
alli
sti
c CN
TFET (As
m
a
L
ar
ibi)
4943
Figure
2.
2D grap
he
ne
s
heet i
ll
us
trat
ing
lat
ti
ce vecto
rs
a
1 a
nd a2, a
nd the
ro
ll
-
up v
ect
or [14
]
n
an
d
m
are
integers,
they
de
te
rm
ine
if
a
SWNT
will
be
a
m
et
al
or
a
sem
ic
on
duct
or.
They
are
al
so
cal
le
d
in
dex
es
al
so
al
lo
w
to
det
erm
inethe ch
iral
angle t
hat i
s g
i
ven b
y :
=
−
1
(
√
3
2
+
)
(4)
The
c
hiral
an
gl
e
θ
is
us
e
d
t
o
sepa
rate
ca
rbon
na
notu
bes
into
three
cl
ass
es
di
ff
e
ren
ti
at
ed
by
thei
r
el
ect
ro
nic
pro
per
ti
es:
zi
g
-
za
g
(m
=
0,
n
>
0,
θ
=
0˚),
a
r
m
chair
(
n
=
m
,
θ
=
30
˚)
,
a
nd
c
hiral
(0
<
|
m
|
<
n,
0
<
θ <
30˚
)
ca
n
see
in Fi
gure
3
.
Figure
3
.
E
xa
m
ples o
f
the t
hree t
ypes
of S
WNTs ide
ntifi
ed by t
he
i
nteg
ers (n
, m
)
Ar
m
chair
carbon
na
no
t
ub
es
are
m
e
ta
ll
ic
.
Z
ig
-
za
g
an
d
chi
ral
nanotu
bes
can
be
sem
i
-
m
et
al
s
with
a
finite
band
ga
p
if
n
–
m
/3
=
integer
a
nd
m
≠
n
or
sem
ic
o
nducto
rs
in
al
l
oth
er
case
s.
T
he
ba
nd
ga
p
f
or
th
e
sem
i
-
m
et
allic
and
sem
ic
on
duct
or
na
notu
be
s
scal
es
in
th
e
orde
r
of
the
inv
e
rse
of
the
CNT
diam
e
te
r
giv
i
ng
each
nanotu
be
a
disti
nctive
el
ect
ronic
be
ha
vi
or
.
Each
na
no
tub
e
ca
n
be
un
iqu
el
y
s
pecified
by
it
s
diam
eter
’
d’
and it
s ch
iral
a
ng
le
.
the
diam
e
te
r
of the
n
a
not
ub
e
can
b
e
exp
resse
d
as:
d = Ch/
π=
√
3
.
−
(
2
+
+
2
)
1
/
2
/
]
(5)
3.
CN
TFE
T
STRUC
UR
E
The
first
CNF
ETs
w
he
re
co
nceive
d
in
a
ve
ry
easi
est
wa
y,
as
only
a
pr
oof
of
c
oncept
and
a
ba
sic
unde
rstan
d
we
re
the
goal
s
of
these
new
dev
ic
es.T
he
first
CNTFE
T
s
wer
e
re
port
ed
in
1998.
T
he
first
g
ene
rati
on
of
CNTs a
re
giv
e
n
in
F
ig
ure
4.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
8
, N
o.
6
,
Dece
m
ber
2
01
8
:
4941
-
4950
4944
F
igure
4. First
gen
e
rati
on
of
CNFETs
[1
6
]
-
[
17]
CNFETs
a
re
c
on
si
der
e
d
as
a
po
te
ntial
cand
i
date
to
re
place
MOSFET
S
be
yond
the
11
nm
te
chnolo
gy
node
beca
us
e
of
the
go
od
e
le
ct
rical
transpor
t
pro
per
ti
es
of
car
bone
na
no
t
ub
e
s
a
nd
al
so
t
he
fea
sibil
it
y
of
us
in
g
C
NTs
t
o con
cei
ve
C
NT
FETs
with a
v
e
ry go
od elec
tro
s
ta
ti
c con
tr
ol [18
]
.
These
sim
ple
dev
ic
es
wer
e
f
abr
ic
at
ed
by
de
posit
ing
sin
gl
e
-
wall
CNTs
f
ro
m
so
luti
on
on
to
oxidize
d
Sil
ic
on
wa
fer
s
that
had
bee
n
pr
e
patte
m
ed
us
ing
gold
or
plati
nu
m
el
ec
trodes
that
serv
e
d
as
so
urce
an
d
dr
ai
n
el
ect
ro
des
con
nected
via the
na
notu
be
c
ha
nnel
,a
nd
t
he doped
Si s
ub
st
rate ser
ved
as the
dev
ic
e
gate [
19
]
-
[
20]
.
The
ope
rati
ng
pr
i
nciple
of
th
e
conve
ntion
al
fiel
d
eff
ect
tra
ns
ist
or
base
d
on
car
bon
na
notub
e
is
ve
ry
sim
il
ar
to
a
MOSF
ET
T
r
ansisto
r
c
on
si
de
rin
g
re
placi
ng
the
c
hannel
m
at
erial
to
ta
ke
adv
a
ntage
of
ba
ll
ist
ic
transp
ort
in
the
CNTs
,
where
el
ect
rons
a
re
s
upplied
by
source
te
rm
in
al
and
drai
n
t
erm
inal
will
c
ollec
t
these
ca
rr
ie
r
s
nev
e
rtheless
, t
he
a
rr
a
ng
em
en
t keeps c
hangi
ng in o
rd
e
r
to
im
pr
ov
e t
he per
form
ance o
f
th
e d
e
vice.
Be
cause
of
th
ese
uniq
ue
fe
tures,
C
NTFE
Ts
bec
om
e
dev
ic
es
of
s
pe
ci
al
interest
.
Fiel
d
ef
fect
transisto
rs
m
ade
of
ca
r
bon
na
no
t
ub
e
s
so
far
can
be
cl
assifi
ed
into
tw
o
2
bi
gg
est
cl
asses:
back
-
gated
C
N
FETs
and to
p
-
gated
on
e
s [2
1]. Late
ly
, a
ne
w
str
uct
ur
e
h
as
b
ee
n
i
nt
rodu
ce
d
know
n
as
v
e
rtic
al
CNFETs
.
CNTFET
s
are
al
so
t
hr
ee
te
r
m
inals
dev
ic
e
li
ke
MOS
FET
s
,
the
dif
fer
e
nc
e
betwee
n
th
ese
tw
o
fiel
d
eff
ect
dev
ic
es
is
that
CNT
F
ETs
em
plo
y
the
CNT
as
a
c
hannel
betwee
n
it
s
sou
rce
a
nd
it
s
drai
n
te
r
m
inals
wh
e
re
as
M
OSFETs
c
hannel
is
m
ade
of
do
ped
Si.
Accor
di
ng
t
o
the
num
ber
of
la
ye
rs
i
n
the
c
ha
nn
el
of
t
he
CNTFET
s,
t
his d
e
vice ca
n be
Sing
le
Wall
(S
W) o
r
M
ulti
Wall
(
M
W
)
.
CNTF
ET
de
vi
ces
ha
ve
t
wo
m
od
es
of
op
erati
on,
the
S
cho
tt
ky
-
Ba
rr
ie
r
(
SB)
or
M
OS
FE
T
-
Li
ke
CNTFET
s.
Th
e
structu
re
be
tween
these
t
wo
CN
FET
is
on
ly
sli
gh
tl
y
diff
e
ren
t
but
resu
lt
s
in
dif
fer
e
nt
transisto
r
ope
r
at
ion
[
22]
.
I
n
the
SB
-
C
NTFET
s
the
gate
vo
lt
age
m
odul
at
es
the
cu
rr
e
nt
w
hich
flo
w
in
the
channel
by
ch
ang
i
ng
t
he
wi
dth
of
the
ba
r
rier.
But
in
M
OS
FE
T
-
Li
ke
CNTFET
s
the
gate
vo
lt
age
c
an
be
con
t
ro
ll
ed
in
t
he
drain c
urre
nt
by ch
a
ngin
g
th
e h
ei
ght
of the
barrier.
Figure
5. Cr
os
s
secti
on
al
view
of S
c
hott
ky
-
ba
rr
ie
r
CNFET
[
21
]
Figure
6. Cr
os
s
secti
on
al
view
of MO
SFET
li
ke
CNTFET
[2
1]
4.
CN
TFE
TS
SI
MU
L
ATIO
N MO
DEL
T
o
i
nv
est
igate
the
chi
rali
ty
ef
fects
on
our
dev
ic
e
DC
pe
rfo
rm
ance,
a
sim
ple
two
-
dim
ensio
n
al
analy
ti
cal
m
od
el
for
balli
sti
c
CNTFET
is
us
e
d
an
d
s
how
n
in
Fig
ur
e
8
.
Our
sim
ulati
on
stud
y
is
ca
rr
ie
d
ou
t
base
d
on
surfa
ce
po
te
ntial
m
od
el
descr
i
bed
by
Rham
an
et
al
.
This
is
an
e
xtensi
on
of
the
earli
er
wor
k
a
lready
done
by
K
.
N
at
or
i.
This
m
od
el
c
onsist
s
of
th
ree
ca
pacit
ors
t
hat
a
reatt
ached
as
te
rm
inals
of
t
he
de
vic
e.
As
sh
ow
n
in
F
i
gur
e 8
,
a c
harge is
p
la
ced
at the
top of t
he bar
rier.
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Eff
ect
o
f C
hiral
it
y a
nd O
xi
de Thikne
ss
on th
e Perfor
m
an
ce
o
f
a
B
alli
sti
c CN
TFET (As
m
a
L
ar
ibi)
4945
Figure
7. Cr
os
s
secti
on
al
view
of the
CNT
FE
T ty
pe
Figure
8.
2D C
apacit
or m
od
el
for
balli
sti
c transisto
r
N
ty
pe [
23
]
The
to
p
of
t
he
barrier'
s
local
densi
ty
of
sta
te
s
note
d
L
D
OS
ind
ic
at
es
the
c
harge b
y
the
se
lf
-
co
ns
ist
en
t
po
te
ntial
.
At t
he
top of t
he bar
rier,
t
he
e
qu
il
ib
rium
el
ect
ro
n
de
ns
it
y N
o
is
giv
en
b
y :
0
=
∫
(
)
(
−
)
+
∞
−
∞
(6)
w
he
re
(
)
is
t
he
l
oca
l
de
ns
it
y
of
sta
te
at
the
to
p
of
the
barrier
a
nd
(
−
)
represe
nts
the
e
qu
il
ib
rium
Ferm
i
distribut
ion
functi
on.
The
posit
ive
ve
locit
y
sta
te
s
N
1
are
occ
up
i
ed
by
the
sou
rce
and
the
ne
gative
velocit
y st
at
es
N
2
are
o
cc
upie
d by the
drai
n.
N
1
a
nd N
2
a
nd
are
giv
e
n by
[
24]
:
1
=
(
)
2
∫
(
+
−
1
)
−
∞
+
∞
(7)
2
=
(
)
2
∫
(
+
−
2
)
−
∞
+
∞
(8)
E
F1
and
E
F2
ar
e
Ferm
i
le
vels
an
d
U
scf
.
I
s
t
he
sel
f
-
c
on
sist
ent
pote
ntial
a
t
the
to
p
of
th
e
ba
rr
ie
r
.
Th
e
Laplace
po
te
ntial
U
L
at
the
to
p
of
t
he
ba
rr
ie
r
i
gnori
ng
m
ob
il
e
c
ha
rg
e
in
giv
e
n
by
[
18
]
:
Ca
lc
ulate
a
La
place
po
te
ntial
U
L
:
=
−
(
+
+
)
(9)
Wh
e
re:
=
,
=
,
=
C
T
is
the
pa
rall
el
com
bin
at
ion
of
t
hr
ee
ca
pa
ci
tors
C
G
,
C
D
,
C
S.
The
pote
ntial
du
e
t
o
m
ob
il
e
char
ge
Up
c
an
be
expresse
d by:
=
2
(
1
+
2
)
−
0
(10)
The
e
ntire sel
f
-
consi
ste
nt pote
ntial
Uscf
is
gi
ve
n by s
up
e
rpos
it
ion
of
U
L
a
nd U
P
po
te
ntial
s [18
]
:
=
+
(11)
=
−
(
∝
+
+
)
+
2
(
1
+
2
)
−
0
(12)
=
4
ℎ
[
(
1
+
(
1
−
)
)
−
(
1
+
(
2
−
)
)
]
(13)
k
B
:
is
the
B
oltzm
ann
co
ns
ta
nt,
T
:
is
a
n
ope
ra
ti
ng
te
m
per
at
ur
e
,
E
F
:
is
the
F
erm
i
ener
gy
,
U
s
cf
:
s
urface
pote
ntial
and q t
he
c
ha
r
ge
elec
tric
f
ie
ld.
5.
RESU
LT
S
A
ND
DI
SCUS
S
ION
To
i
nv
e
sti
gate
the
pe
rfor
m
ance
of
scal
ed
car
bone
na
no
tub
e
MOS
FE
Ts,
we
sim
ulate
d
a
plan
ar
CNTFET
with
a
balli
sti
c
cha
nn
el
,
at
r
oom
t
e
m
per
at
ure.
T
he
dev
ic
e
sim
ulate
d
has
a
10
nm
SiO
2
gate
oxi
de
thickne
ss.
Di
ff
e
ren
t
diam
eter
s,
wh
ic
h
res
ults
in
diff
e
re
nt
ba
ndga
p
al
lowing
dif
fer
e
nt
drai
n
c
urre
nt
are
si
m
ulat
ed.
W
e
exp
l
or
e
v
a
rio
us i
ssu
es
b
y
va
r
yi
ng
tw
o pa
ra
m
et
ers
that are
the ch
i
rali
ty
an
d
the
oxide
thi
ckn
e
ss.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
8
, N
o.
6
,
Dece
m
ber
2
01
8
:
4941
-
4950
4946
5.1.
Effect
of c
hira
li
ty
on
th
e
el
ec
trical de
vice
c
ha
r
act
eri
s
tics
In
this
sect
io
n,
we
stu
dy
the
chirali
ty
eff
ect
s
on
the
CNT
FETs’
c
har
act
erist
ic
s,
knowing
that
th
e
chirali
ty
(n
,
m
)
of
S
WNTs
de
te
rm
ines
the
diam
e
te
r
of
CNT,
an
d
the
C
NT'
s
ener
gy
ga
p.
I
n
this
w
ork
SiO
2
gate insu
la
to
r
(
k=3.9) w
it
h
10
n
m
thikn
ess is u
sed,
gate
and d
rain
co
ntr
ol ar
e (0.88 and
0.35) r
es
pecti
vel
y, the
so
urce ferm
i
lev
el
is
eq
ual
to
-
0.3
2
eV
an
d
operati
ng
te
m
per
at
ur
e
is 3
00°K.
To
i
nv
est
igat
e
the
infl
uen
ce
of
th
e
chirali
ty
on
CNTFE
T
we
ha
ve
sim
ulate
d
f
our
C
NTF
ET
s w
it
h
diff
e
re
nt d
ia
m
e
te
rs
an
d
obviou
sel
y diffe
ren
t (n,
m
)
giv
en
i
n
T
a
ble
1.
T
able1
.
Ch
iral
i
ty
, d
ia
m
e
te
r
an
d
e
neg
y
ga
p
Ch
irality
(n,
m
)
Dia
m
et
er
(n
m
)
Energy gap
(5,0
)
3
.9e
-
10
2
.17
(10
,0)
7
.8e
-
10
1
.0
(19
,0)
(26
,0)
1
.5e
-
09
2
.0e
-
09
0
.5
0
.4
All
si
m
ulati
on
res
ults
al
lowi
ng
obse
rv
i
ng
c
hirali
ty
influ
e
nc
e
on
the
drai
n
c
ur
ren
t
of
our
de
vice
are
giv
e
n
in
F
ig
ure
10
–
13:
(a)
(b)
Figure
9. T
he I
-
V
c
har
act
eris
ti
cs o
f
a
(5
-
0)
S
WN
T
:
(a) I
ds
–
Vds
(b) Id
s
-
V
gs
i
n
lo
ga
rithm
ic
scale
(a)
(b)
Figure
10
.
Th
e I
-
V
c
ha
racter
ist
ic
s o
f
a
(10
-
0) S
WN
T:
(a) I
ds
–
V
ds (
b) Ids
-
V
gs
i
n
lo
ga
rithm
ic
scale
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Eff
ect
o
f C
hiral
it
y a
nd O
xi
de Thikne
ss
on th
e Perfor
m
an
ce
o
f
a
B
alli
sti
c CN
TFET (As
m
a
L
ar
ibi)
4947
(a)
(b)
Figure
11. Th
e I
-
V
c
ha
racter
ist
ic
s o
f
a
(19
-
0) S
WN
T:
(a) I
ds
–
V
ds (
b) Ids
-
V
gs
i
n
lo
ga
rithm
ic
scale
(a)
(b)
Figure
12. Th
e I
-
V
c
ha
racter
ist
ic
s o
f
a
(26
-
0) S
WN
T:
(a) I
ds
–
V
ds (
b) Id
s
-
V
gs
in
lo
gar
it
hm
ic
scale
Figure
13. I
ds
-
V
ds
cha
racteri
s
ti
cs o
f
C
NTFE
Ts w
it
h chi
rali
ti
es o
f
(5,
0), (
10, 0
),
a
nd (1
9,
0), (2
6,
0)
(V
G
=
0.6
V)
In
t
his
pa
rt
we
will
exp
l
or
t
he
eff
ect
of
c
hir
al
it
y
,
the
F
igur
e
9,
10,
11,
1
2(a)
s
hows
that
the
chirali
ty
is
dir
ect
ly
relat
ed
to
CN
Ts'
dia
m
et
er
,
an
d
th
e
diam
et
er
var
i
at
ion
h
as
a
di
re
ct
eff
ect
on
the
transist
or
an
d
this
is
ind
ic
at
ed
in
e
quat
ion
5,
a
nd
t
he
ga
p
is
i
nv
e
rsely
pro
portio
nal
to
the
dia
m
et
er
of
the
c
arbo
n
nanotu
be
.
T
he
chirali
ty
has
a
n
im
pact
on
th
e
dev
i
vce
ou
t
put
cu
rr
e
nt.
I
nd
eed,
wh
e
n
t
he
chirali
ty
increa
ses
the
drai
n
c
urren
t
increases
i
n
F
i
gure
10,
f
or
(n,
m
)=
(5
,
0)
at
VG
=
1V
,
dr
ai
n
current
of
5µ
A
ha
s
bee
n
ob
t
ai
ned
a
nd
f
or
(n,m
)=
(26,
0)
a
dr
ai
n
curre
nt
of
24
µA
has
been
ob
ta
ine
d.It
ca
n
be
see
n
C
NT
FETs
us
in
g
ca
rbo
n
na
notu
be
with
la
rg
er
diam
et
er
have
a
hi
gh
e
r
dr
ai
n
cu
rr
e
nt,
I
F
igure
9,
10,
11,
12
(b)
the
c
urves
is
s
how
n
in
lo
gar
it
hm
ic
scal
e
at
g
at
e volt
age
of
0.6 V the
im
pact o
f
c
hira
li
ty
o
n
O
ff
cu
rrent .
Table
2
giv
e
s
the
value
f
or
Ion
an
d
Ioff
cu
rrent
we
rem
ark
that
wh
e
n
the
chirali
ty
increase
the
value
of
I
on
cu
rr
e
nt
increase
al
so.
The
diam
et
er
on
CN
T
has
sp
eci
al
ly
eff
e
ct
on
drai
n
cu
rr
e
nt
(
on
–
cu
r
ren
t)
,
autom
at
ic
ally th
e
rati
o
I
on/I
off
inc
rease
for (
26,0) c
hirali
ty
.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
8
, N
o.
6
,
Dece
m
ber
2
01
8
:
4941
-
4950
4948
Table
2
. V
al
ue
of I
on
an
d
I
o
ff
c
urren
t
corre
spondin
g
t
o
c
hira
li
ty
Ch
irality
(n,
m
)
I
on
(
μA)
I
off
(μ
A)
I
on
/
Ioff
(5,0
)
2
3
.8x
1
0
-
5
0
.5
x
10
5
(10
,0)
3
.5
3
.8x
1
0
-
5
0
.9
x
10
5
(19
,0)
(26
,0)
5
.8
7
.8
3
.8x
1
0
-
5
3
.8x
1
0
-
5
1
.5
x
10
5
2
x
10
5
5.2.
Effect
of
oxid
e th
ikn
ess
In
t
his
sect
io
n
the
im
pact
of
ox
i
de
thi
kn
e
ss
on
the
ou
t
put
char
act
erist
ic
of
CNTFE
T
pe
rfor
m
ance
is
sIm
ulate
d,
the
nanotu
be diam
et
er w
il
l be
f
i
xe
d
at
2 nm
an
d t
he
t
is
var
ie
d
f
ro
m
1
-
5 nm
.
The
F
i
gure
14
,
15,
16
(a
)
s
how
the
dr
ai
n
c
urr
ent
f
or
dif
f
eren
ts
oxide
i
ns
ulat
or
i
n
li
ne
ar
scal
e,
we
ob
s
er
ve
that
w
hen
the
gate
oxide
thik
ness
i
s
thin
the
co
nductivit
y
incre
ase
and
the
le
akag
e
c
urren
t
is
no
t
increasin
g, f
rom
h
igh
er
value
f
r
om
insu
la
or
thikn
e
ss
the
h
e
igh
t
of
pote
ntia
l barrie
r
bec
ome
s h
ig
h
is c
ontr
olled
by the
gate s
ou
rce
vo
lt
age
.
The
F
i
gure
14,
15,
1
6
(b)
s
how
the
dr
ai
n
cu
rr
e
nt
f
or
dif
fere
nts
oxide
i
nsu
la
tor
in
lo
ga
rithm
scal
e
we
ob
s
er
ve
the
in
flue
nce
on
vari
ance
of
ins
ula
tor
gate
oxide
thikn
e
ss
on
cu
rr
e
nt
I
on
,
I
ds
(I
o
ff
)
is
incha
nge
d
,
we
con
cl
ud
e
whe
n
the in
su
la
to
r
t
hikness is
r
e
duced th
e
r
at
io
I
on
/I
off
will
inc
rea
se.
(a)
(b)
Figure
1
4
. Th
e I
-
V
c
ha
racter
ist
ic
s o
f o
xid
e t
hikness t=
3n
m
: (a)
I
ds
–
V
ds
(b) Ids
-
V
gs i
n
l
og
a
rithm
ic
scal
e
(a)
(b)
Figure
1
5
. T
he
I
-
V
c
ha
racteri
sti
cs o
f
oxide
thik
ness
t=
2 n
m
: (a)
I
ds
–
Vds (b) I
ds
-
V
gs
i
n
lo
ga
rithm
ic
s
cal
e
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Eff
ect
o
f C
hiral
it
y a
nd O
xi
de Thikne
ss
on th
e Perfor
m
an
ce
o
f
a
B
alli
sti
c CN
TFET (As
m
a
L
ar
ibi)
4949
(a)
(b)
Figure
1
6
. Th
e I
-
V
c
ha
racter
ist
ic
s o
f o
xid
e t
hiknesst=
1 nm
: (a) I
ds
–
V
ds (
b) Ids
-
V
gs
in
l
og
a
rithm
ic
scal
e
Figure
1
7
.
E
ff
e
tc
t
of
oxide t
hik
ne
ss
on I
-
V
char
act
e
risti
cs in linear
scale
Figure
1
8.
Var
i
at
ion
of drai
n
-
s
ource c
urre
nt (
IDS
)
dr
ai
ns
ou
rce
volt
age (
V
DS
) for
v
a
rio
us
gate
insu
la
to
r
thic
knesses
of CN
T
FET
by
De
vi
Dass,
Ra
kesh P
rash
e
r,
Ra
kes
h
Vaid
,
T
his r
es
ult j
ust
ifie
s
the ac
cu
racy
of our re
su
lt
[7]
Fr
om
T
able
3
we
ram
ark
t
ha
t
the
I
on
c
urrent
is
inv
e
rsely
pro
poti
onnel
to
the
ins
ulator
thik
ness
a
nd
the
le
akag
e
c
urre
nt
is
no
t
af
f
ect
ed
by
the
ga
te
insu
la
tor
t
hi
kn
ess
bu
the
ra
ti
on
I
on
/I
o
ff
is
w
il
l
increase
when
the
value
of
gate
ox
i
de
t
hikness
is
dec
rease
.
Our
sim
ulati
on
acc
ur
acy
ca
n
be
justi
fied
by
in
vestigat
in
g
oth
e
r
si
m
ulati
on
r
es
ul
t, the r
es
ult
is
appr
ox
im
at
ely eq
ual c
om
par
e
d wit
h re
su
lt
in
F
ig
ur
e
1
8
.
Table
3
. V
al
ue
of I
on
an
d
I
o
ff
c
urren
t
f
or
oxyd
e thik
ness
Ox
y
d
e thik
n
ess
(
n
m
)
I
on
(
μA)
I
off
(μ
A)
I
on
/I
o
f
f
1
36
3
.8x
1
0
-
5
9
.4 x
10
5
2
18
3
.8x
1
0
-
5
4
.7x
10
5
3
5
13
9
3
.8x
1
0
-
5
3
.8x
1
0
-
5
3
.4 x
10
5
2
.
3
x
1
0
5
6.
CONCL
US
I
O
N
In
t
his
pa
pe
r
we
ha
ve
i
nv
e
s
ti
gate
the
ef
fec
t
of
c
hirali
y
and
gate
ox
i
de
thikn
e
ss
on
pe
rfor
m
ance
of
CNTFET
dev
i
ce,
I
hav
e
a
naly
se
in
t
he
first
pa
rt
the
in
flu
ence
of
c
hirali
ty
on
the
outp
ut
c
har
act
erist
i
cs
f
or
carbo
n
na
notu
be
fiel
d
ef
fect
transisto
r
.
Throug
h
sim
ulatio
n
res
ult
we
hav
e
obse
rv
e
d
that
w
hen
ch
iral
it
y
increases
the c
u
r
ren
t
value
in
crease a
nd the
rati
o
I
on
/I
o
f
f
is
pro
portio
nn
el
t
o t
he
c
hirali
ty
.
Fr
om
seco
nd
pa
rt
we
ha
ve
st
ud
y
t
he
im
pact
of
gate
ox
i
de
thikn
e
ss
on
dr
ai
n
cu
rr
e
nt
we
can
ob
se
r
ve
that
the
c
urrent
is
af
fected
by
the
gate
ins
ul
at
or
thik
ness
,
t
he
oxide
thi
kness
a
f
fects
the
I
on
c
urren
t
but
the
I
of
f
current
rem
ai
n
sta
ble.
The
a
ccur
acy
of
our
res
ult
can
be
pro
ved
by
co
m
par
ing
oth
e
r
resea
rch
group
wor
k
wh
ic
h
is
id
ent
ic
al
.
An
al
ysi
s
res
ults
co
ncl
ud
e
that
the
CNTFET
s
ha
ve
the
po
te
ntial
to
be
a
s
uc
cessf
ul
rep
la
cem
ent
o
f
MOSFE
T
s in
nanoscale el
ect
ronics.
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
8
, N
o.
6
,
Dece
m
ber
2
01
8
:
4941
-
4950
4950
REFERE
NCE
S
[1]
W.
Ahm
ad
and
A.
Anze
r
,
“M
odel
ing
and
sim
ulation
of
b
al
l
isti
c
ca
rbon
n
anot
ube
fie
ld
eff
ec
t
tra
n
sistors
(cn
tfe
ts)
with
quant
um
tr
ansport
con
ce
pt
and
it
s
appl
i
cati
on
in
nano
elec
tr
onic
s,”
VSR
D
In
te
rnational
Jour
nal
of
El
e
ct
ri
cal,
El
e
ct
ronics
&
C
omm
unic
ati
on
E
ngine
ering
,
v
ol
/is
sue:
3
(
7
),
2013
.
[2]
L.
W
ei
,
et
al
.
,
“
Non
it
era
t
ive
Co
m
pac
t
Modell
in
g
for
Intri
nsic
C
arb
on
-
Nanotube
FETs:
Quantum
Capa
c
it
an
ce
and
Bal
li
st
ic T
ran
sp
ort
,
”
IE
EE
Tr
ansacti
ons on
Elec
t
ron Dev
ices
,
vo
l
/i
ss
ue:
58
(
8
)
,
20
11.
[3]
R.
Sahoo
and
R
.
R.
Mishra,
“
Si
m
ula
ti
ons
of
Ca
rbon
Nanotube
Fiel
d
Eff
ec
t
Trans
istors,
”
Inte
rn
ati
onal
Journal
of
El
e
ct
ronic
Engi
n
ee
ring
Re
search
,
v
ol
/i
ss
ue:
1
(
2
),
pp.
117
–
125
,
20
09
.
[4]
L
.
S.
Nasrat
,
et
al.
,
“
Carbon
Nanotube
s
Eff
e
ct
for
Pol
y
m
er
Mate
r
ia
ls
on
Break
Dow
n
Volta
ge
,
”
In
te
rnationa
l
Journal
of
Elec
t
rical
and
Computer
Eng
ine
ering
(
IJE
CE)
,
v
ol
/i
ss
ue:
7
(
4
)
,
pp
.
177
0
-
1778
,
2017
.
[5]
H.
S.
Phili
pwon
g
and
D.
Akinwande
,
“
Carbon
Nanot
ube
and
G
rap
hene
Dev
ice
Ph
y
sics
,
”
Cambridge
Univer
si
t
y
Pre
ss
,
New York
,
2011
.
[6]
R.
Martel
,
et
a
l
.
,
“
Am
bipol
ar
El
e
ct
ri
ca
l
Tra
ns
port
in
Sem
ic
o
nduct
ing
Singl
e
-
W
al
l
Carbon
Nanotube
s,”
Ph
ys.
Re
v
.
Lett
,
2001
.
[7]
D.
Da
ss
,
et
al
.
,
“I
m
pac
t
of
sca
ling
gat
e
insul
at
o
r
thi
ckn
ess
on
the
per
form
ance
of
ca
rbon
nano
t
ube
field
eff
e
ct
tra
nsistors (c
n
tfets),
”
Journal
o
f nano
-
and
e
lectr
onic
ph
ysic
s
,
v
ol
/i
ss
ue:
5
(
2
)
,
201
3.
[8]
D.
Zha
ng
,
et
a
l
.
,
“
Char
ac
t
eriza
t
ion
of
Mult
i
-
W
al
l
ed
Carbon
Nanotube
Film
Sensor
and
Et
ha
nol
Gas
-
Sensing
Properti
es,
”
TEL
KOMNIKA
,
v
ol
/
issue:
11
(
1
)
,
pp.
55
-
62
,
2013
.
[9]
C.
Scovi
ll
e
,
et al
.
,
“
Carbon
Nano
tube
s
.
”
[10]
S.
Nabiz
ade
h
,
et
al.
,
“
Num
eri
ca
l
Study
of
CNT
Micro
Fi
n
Arra
y
for
Cooli
ng
Ap
pli
c
at
ion
,”
Bulle
ti
n
of
El
e
ct
rica
l
Engi
ne
ering
and
Informatic
s
,
v
ol
/i
ss
ue:
2
(
4
)
,
pp
.
233
-
239
,
2013
.
[11]
M.
Bozlar,
“
Modificati
on
de
sur
fac
e
des
n
anot
u
bes
de
ca
rbon
e
par
un
po
l
y
m
èr
e
conducte
ur
élec
trogé
nér
é
pou
r
l
a
réa
l
isat
ion
de
na
nocompos
it
es
m
ult
if
onc
ti
onn
el
s
,
”
Th
èse
do
ct
or
at,
é
cole cent
r
ale
p
ari
s,
2007
.
[12]
S.
R
izk
,
“
El
abor
at
ion
Et
Car
acté
risat
ion
De
Nanostruc
ture
s
Carb
onee
s
Par
Proce
de
Cvd
Assist
e
Par
Plasm
a
Micro
onde
,”
Th
èse
do
ct
ora
t,
Univ
ersité
Henri
Poinc
aré,
Nan
c
y
I
,
2009
.
[13]
A.
Khial
,
et
al
.
,
“
On
the
DIBL
Reduc
ti
on
Eff
e
ct
of
Short
Channe
l
Carbon
Na
notube
Fiel
d
Ef
fec
t
Tr
ansistors
,
”
Inte
rnational
Jo
urnal
of El
e
ct
ri
c
al
and
Comput
er
Engi
n
ee
ring
(
IJE
CE)
,
v
ol
/
issue:
6
(
4
)
,
pp
.
1514
-
1
521
,
2016
.
[14]
A.
Mouatsi.
,
“
Com
posants
a
het
ero
stru
ct
ure
s
Applic
at
i
on
en
nanoe
lectr
oniq
ue
et
nanophotonique
,
”
The
se
de
doct
ora
t,
Uni
ver
sité
d
e consta
nt
i
ne
1,
2013
.
[15]
J.
H.
L
ee
and
B.
S.
Le
e
,
“
Modal
ana
l
y
sis
of
ca
rbon
n
anot
ub
es
and
n
anoc
on
es
using
FEM
,
”
Computati
ona
l
Mate
rials S
ci
en
c
e
,
vo
l.
51,
pp.
30
–
42
,
2012
.
[16]
Nanotube
f
ie
l
d
-
e
ffe
ct t
r
ansistor
.
h
tt
p://ww
w.re
sea
r
ch.
ib
m
.
com/nan
oscie
nc
e/
fe
t.
h
tml
[17]
P
.
J.
F.
Harri
s,
“C
arb
on
nanot
u
bes
and
rel
a
te
d
struct
ure
s
new
m
at
eri
a
ls
for
the
twenty
first
c
entur
y
,”
Cambrid
g
e
Univer
sit
y
Press
,
New York
,
200
4
.
[18]
L
.
W
ei
,
et
al
.
,
“
Non
it
era
t
ive
Co
m
pac
t
Modell
in
g
for
Intri
nsic
C
arb
on
-
Nanotube
FETs:
Quantum
Capa
c
it
an
ce
and
Bal
li
st
ic T
ran
sp
ort
,
”
IE
EE
Tr
ansacti
ons
on
Elec
t
ron Dev
ices
,
vo
l
/i
ss
ue:
58
(
8
)
,
20
11
.
[19]
H
.
C
.
Chuan,
“
Modeli
ng
and
Anal
y
sis
of
Ballisti
c
Carbon
N
anot
ube
Fie
ld
E
ffe
ct
Tr
ansistor
(CNTFET)
with
Quantum T
ran
sp
ort
Conc
ept
,
”
20
07.
[20]
R.
Ran
i
,
“
Carb
on
Nano
Tub
es
in
Fie
ld
Eff
e
ct
of
Tr
ansistor
,
”
Inte
rnatio
nal
J
ournal
of
Inno
v
ati
v
e
R
ese
arch
in
Computer
and
C
omm
unic
ati
on
E
ngine
ering
,
v
ol
/is
sue:
4
(
2
),
2016
.
[21]
S
.
Z
.
A
.
,
e
t
al
.
,
“
Com
par
ison
of
t
he
per
form
an
ce
of
ballisti
c
schot
tk
y
bar
r
ie
r
Gr
ap
hene
Nanor
ibbo
n
FET
,
”
Ba
chelo
r
of
Scie
n
ce,
BRA
C
Univer
sit
y
,
B
a
ngla
desh,
2014.
[22]
S.
A.
Khan
and
M
.
Hasan
,
“
Cha
rac
t
eri
z
ation
of
Carbon.
Nano
tu
be
Fiel
d
Eff
ec
t
Tra
nsistor
,
”
Ba
c
hel
or
of
Scie
n
ce
,
Bangl
ad
esh,
201
2
.
[23]
S.
A.
Khan,
et
al
.
,
“
Inve
stigation
of
CNTFET
Perform
anc
e
with
Gate
Contro
l
Coef
fic
i
ent
Eff
e
ct
,
”
J
ournal
of
nano
-
and
elec
t
roni
c
p
hysic
s
,
v
ol
/i
ss
ue:
6
(
2
)
,
2014
.
[24]
D
.
Dass
and
R
.
Vaid,
“
Im
pac
t
o
f
SW
CNT
Band
Gaps
on
th
e
Pe
rform
anc
e
of
a
Bal
li
st
ic
C
arb
on
Nanotube
Fiel
d
Eff
ect Transistor
s (CNTFET
s)
,
”
Journal
of
nano
-
and
e
lectronic p
hysic
s
,
v
ol
/i
ss
ue:
9
(
4
)
,
2017
.
Evaluation Warning : The document was created with Spire.PDF for Python.