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SS
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2088
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sh
o
w
s
th
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p
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tu
re
se
n
siti
v
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F
in
F
ET
a
n
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th
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p
o
ss
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il
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u
sin
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).
K
ey
w
o
r
d
s
:
C
h
a
n
n
el
f
i
n
Fin
FET
MO
SF
E
T
T
em
p
er
atu
r
e
s
e
n
s
it
iv
it
y
Co
p
y
rig
h
t
©
2020
In
stit
u
te
of
A
d
v
a
n
c
e
d
E
n
g
i
n
e
e
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g
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ien
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e
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All
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h
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se
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.
C
o
r
r
e
s
p
o
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A
uth
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r
:
Yasir
Has
h
i
m
,
Dep
ar
t
m
en
t
of
C
o
m
p
u
ter
E
n
g
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n
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T
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h
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i
q
1.
I
NT
RO
D
UCT
I
O
N
T
h
e
in
d
u
s
tr
y
f
o
cu
s
on
s
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ico
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m
eta
l
-
o
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id
e
-
s
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m
ico
n
d
u
cto
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ield
ef
f
ec
t
tr
an
s
is
to
r
s
(
MO
SF
E
T
s
)
f
o
r
th
e
p
ast
6
d
ec
ad
es,
th
is
h
a
s
b
ee
n
m
ai
n
l
y
d
u
e
to
th
e
s
i
m
p
lic
it
y
of
m
a
n
u
f
ac
tu
r
e,
in
h
er
en
t
s
ca
lab
ilit
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an
d
h
i
g
h
lev
els
of
p
o
s
s
ib
le
i
n
te
g
r
atio
n
[
1
,
2
]
.
Un
til
n
o
w
th
e
in
d
u
s
tr
y
h
as
k
ep
t
up
w
i
th
Mo
o
r
e’
s
la
w
[3
-
5]
by
m
a
k
i
n
g
tr
an
s
i
s
to
r
s
s
m
aller
an
d
r
ed
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ci
n
g
t
h
e
d
is
ta
n
ce
b
et
w
ee
n
th
e
m
.
T
h
e
p
r
o
b
lem
t
h
at
ar
is
e
s
w
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h
r
ed
u
cin
g
s
ize
is
th
at
th
e
tr
an
s
is
to
r
w
ill
co
n
d
u
ct
cu
r
r
en
t
ev
en
w
h
e
n
it
tu
r
n
ed
o
f
f
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d
th
u
s
co
n
s
u
m
e
p
o
w
er
.
To
m
ak
e
t
h
e
ch
ip
s
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h
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ig
h
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teg
r
atio
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a
n
e
w
s
tr
u
ct
u
r
e
of
tr
an
s
is
to
r
s
h
as
to
be
u
s
ed
s
in
ce
o
ld
MO
SF
E
T
s
tr
u
ctu
r
e
ca
n
n
o
t
be
r
ed
u
ce
d
f
u
r
t
h
er
in
n
a
n
o
d
i
m
en
s
io
n
s
ize
.
Ma
n
y
n
e
w
f
ield
e
f
f
ec
t
tr
an
s
is
to
r
(
FET
)
s
tr
u
ctu
r
es
h
av
e
b
ee
n
ex
te
n
s
i
v
el
y
e
x
p
lo
r
ed
g
iv
en
th
a
t
th
e
m
etal
o
x
id
e
s
e
m
ico
n
d
u
cto
r
FET
(
MO
SF
E
T
)
tech
n
o
lo
g
y
h
as
co
n
ti
n
u
ed
to
ap
p
r
o
ac
h
it
s
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o
w
n
s
ca
li
n
g
li
m
its
.
On
e
of
t
h
e
r
elativ
el
y
n
e
w
er
FET
s
is
th
e
Fin
FET
as
s
h
o
w
n
in
Fi
g
u
r
e
1
[
6
]
,
a
tr
an
s
is
to
r
-
s
tr
u
ctu
r
ed
FET
th
at
is
a
p
o
p
u
lar
r
esear
ch
to
p
ic
in
th
e
ac
ad
e
m
ic
f
ield
an
d
s
e
m
ic
o
n
d
u
cto
r
in
d
u
s
tr
y
[7
-
9
]
.
T
h
e
o
n
e
n
e
w
p
r
o
m
i
s
in
g
MO
S
FET
ar
ch
itectu
r
e
is
t
h
e
Fin
FET
s
ee
Fig
u
r
e
1
th
at
h
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v
e
th
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ate
s
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r
r
o
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n
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ce
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,
o
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e
w
a
y
of
cr
ea
ti
n
g
a
Fi
n
FET
is
to
u
s
e
a
n
a
n
o
w
ir
e
as
a
ch
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n
el
an
d
b
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ld
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ate
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n
d
it.
[
1
0
-
12]
T
h
e
b
est
ex
a
m
p
le
of
s
en
s
o
r
s
f
o
r
s
u
b
s
u
m
ed
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lectr
o
n
ic
ap
p
li
ca
tio
n
s
(
i.e
.
u
s
ed
w
it
h
i
n
eq
u
i
p
m
e
n
t)
is
th
e
s
e
m
ico
n
d
u
c
to
r
te
m
p
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e
s
en
s
o
r
[
1
3
]
.
T
r
an
s
is
to
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-
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ase
d
tem
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e
s
e
n
s
o
r
s
ar
e
d
esig
n
ed
on
th
e
b
asi
s
of
th
e
te
m
p
er
at
u
r
e
ch
ar
ac
ter
i
s
tics
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r
r
en
t
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c
u
r
v
es
of
n
an
o
w
ir
e
tr
a
n
s
i
s
to
r
s
[
1
4
-
2
0
]
.
A
b
ip
o
lar
tr
an
s
i
s
to
r
can
be
u
s
ed
as
a
te
m
p
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s
en
s
o
r
by
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n
n
ec
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g
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ts
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ase
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d
co
llecto
r
an
d
o
p
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atin
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th
e
m
in
d
io
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e
m
o
d
e.
Si
m
i
lar
l
y
,
a
tr
an
s
is
to
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w
it
h
M
OSFET
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tr
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u
s
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as
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te
m
p
er
atu
r
e
s
e
n
s
o
r
by
c
o
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n
ec
ti
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th
e
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ate
w
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o
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r
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or
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ain
as
s
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w
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in
Fi
g
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r
e
2.
E
lectr
o
n
ic
d
ev
ice
s
,
s
u
ch
as
d
io
d
es,
tr
an
s
i
s
to
r
s
,
ca
p
ac
ito
r
s
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J
E
lec
&
C
o
m
p
E
n
g
I
SS
N:
2088
-
8708
Temp
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tu
r
e
ch
a
r
a
cteris
tic
s
o
f F
in
F
E
T b
a
s
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…
(
Yo
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if A
ta
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5651
an
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Fig
u
r
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1.
Fin
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tr
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r
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[
6
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Fig
u
r
e
2
.
MO
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as
a
tem
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s
i
tate
f
u
r
t
h
er
s
t
u
d
y
an
d
i
m
p
r
o
v
e
m
en
t,
a
n
d
th
e
y
r
eq
u
ir
e
f
u
r
t
h
er
in
n
o
v
atio
n
s
d
esp
ite
th
e
li
m
itatio
n
s
in
th
e
f
ield
of
MO
SF
E
T
s
cien
ce
.
So
,
th
is
r
esear
ch
ex
p
lo
r
es
th
e
ef
f
ec
t
of
w
id
t
h
of
Fi
n
of
Fin
F
E
T
on
th
e
tem
p
er
at
u
r
e
s
en
s
iti
v
it
y
of
tr
an
s
i
s
to
r
an
d
th
e
p
o
s
s
ib
ilit
y
of
u
s
i
n
g
it
as
a
t
e
m
p
er
atu
r
e
n
o
n
o
-
s
e
n
s
o
r
.
2.
M
E
T
H
O
D
E
lectr
o
n
ic
d
ev
ice
s
i
m
u
la
tio
n
h
as
b
ec
o
m
e
i
n
cr
ea
s
i
n
g
l
y
i
m
p
o
r
t
an
t
in
u
n
d
er
s
ta
n
d
in
g
t
h
e
p
h
y
s
i
cs
b
eh
i
n
d
th
e
s
tr
u
ct
u
r
es
of
n
e
w
d
ev
ice
s
.
T
h
u
s
,
s
i
m
u
latio
n
to
o
ls
ar
e
ad
o
p
ted
in
th
is
r
esear
ch
f
o
r
th
e
an
al
y
s
is
a
n
d
ev
alu
a
tio
n
of
t
h
e
te
m
p
er
atu
r
e
s
en
s
iti
v
it
y
of
Fin
FET
.
T
h
e
s
im
u
latio
n
to
o
l
can
be
s
u
p
p
o
r
ted
th
e
r
esear
ch
w
o
r
k
f
o
r
f
u
r
t
h
er
ex
p
lo
r
e
an
d
d
ev
el
o
p
m
e
n
t
of
n
an
o
-
d
i
m
e
n
s
io
n
al
ch
ar
ac
ter
is
atio
n
[
2
1
]
.
Sim
u
lat
io
n
to
o
ls
can
also
h
elp
id
en
ti
f
y
d
ev
ice
s
tr
e
n
g
th
s
an
d
w
ea
k
n
es
s
es
a
n
d
r
etr
en
c
h
m
en
t
co
s
t
s
an
d
i
llu
s
tr
ate
t
h
e
e
x
ten
s
ib
ilit
y
of
t
h
ese
d
ev
ices
in
th
e
nm
r
a
n
g
e
[
2
2
,
2
3
]
.
In
th
i
s
s
t
u
d
y
,
M
u
GFET
is
u
s
ed
as
th
e
s
i
m
u
latio
n
to
o
l
to
ex
p
lo
r
e
th
e
ch
ar
ac
ter
is
t
ics
of
t
h
e
Fi
n
FET
tr
an
s
i
s
to
r
.
T
h
e
o
u
tp
u
t
ch
ar
ac
te
r
is
tic
cu
r
v
es
of
th
e
tr
a
n
s
i
s
to
r
u
n
d
er
d
ef
er
en
t
e
n
v
ir
o
n
m
e
n
tal
c
o
n
d
itio
n
s
a
n
d
w
it
h
d
ef
er
en
t
p
ar
a
m
eter
s
ar
e
co
n
s
i
d
er
ed
.
T
h
e
ef
f
ec
t
of
g
ate
Fi
n
w
id
th
on
th
e
te
m
p
er
atu
r
e
s
e
n
s
it
iv
i
t
y
h
a
s
b
ee
n
in
v
e
s
ti
g
ated
b
ased
on
th
e
I
d
–
V
g
ch
ar
ac
ter
i
s
tics
.
M
u
GF
E
T
[
2
4
]
s
im
u
latio
n
to
o
l
h
as
b
ee
n
u
s
ed
f
o
r
th
e
ch
ar
ac
ter
izatio
n
of
Fin
F
E
T
w
it
h
n
a
n
o
-
d
i
m
en
s
io
n
al
s
tr
u
ctu
r
e,
MU
GFET
is
cr
ea
ted
an
d
in
v
en
ted
at
P
u
r
d
u
e
Un
i
v
er
s
it
y
.
Mu
GFET
ad
o
p
ts
eith
er
P
A
D
R
E
or
P
R
OP
HE
T
f
o
r
s
i
m
u
latio
n
,
b
o
th
of
w
h
ic
h
w
er
e
d
ev
elo
p
ed
by
B
ell
L
ab
o
r
ato
r
ies.
T
h
e
P
R
OP
HE
T
is
a
p
ar
tial
d
if
f
er
en
t
ial
eq
u
a
tio
n
p
r
o
f
iler
f
o
r
o
n
e,
t
w
o
,
or
th
r
ee
d
i
m
en
s
io
n
s
,
an
d
P
A
D
R
E
is
a
d
e
v
ice
-
o
r
i
en
ted
s
i
m
u
lato
r
f
o
r
2D
or
3D
d
ev
ices
w
i
th
ar
b
i
tr
ar
y
g
eo
m
e
tr
y
[
2
4
,
2
5
]
.
T
h
e
s
o
f
t
w
ar
e
ca
n
g
e
n
er
ate
u
s
e
f
u
l
ch
ar
ac
ter
is
t
ic
FET
cu
r
v
es
f
o
r
en
g
i
n
ee
r
s
to
h
elp
th
e
m
f
u
ll
y
e
x
p
lai
n
th
e
u
n
d
er
l
y
i
n
g
p
h
y
s
ic
s
of
FET
s
.
Mu
GFET
also
p
r
o
v
id
es
s
elf
-
co
n
s
is
ten
t
s
o
lu
tio
n
s
to
Po
is
s
o
n
an
d
d
r
if
t
-
d
i
f
f
u
s
io
n
eq
u
atio
n
s
[
2
4
,
25]
an
d
can
be
u
s
ed
to
s
i
m
u
late
t
h
e
m
o
tio
n
of
tr
an
s
p
o
r
t
o
b
j
ec
ts
w
h
en
ca
lcu
lati
n
g
Fi
n
FET
ch
ar
ac
ter
is
tics
as
s
h
o
w
n
in
Fi
g
u
r
e
1.
T
h
is
r
esear
ch
u
s
ed
a
s
i
m
u
la
ti
o
n
to
o
l,
w
h
ic
h
is
ca
lled
MU
GFET
.
First
th
e
s
u
itab
le
p
ar
am
eter
s
a
n
d
d
i
m
en
s
io
n
s
w
i
ll
be
c
h
o
s
e
n
f
o
r
s
i
m
u
latio
n
of
Fi
n
FET
,
th
e
d
ata
in
c
lu
d
es
d
i
m
e
n
s
io
n
s
(
le
n
g
t
h
ch
a
n
n
el
(
L
g
)
,
w
id
t
h
c
h
a
n
n
el
(W
F
),
o
x
id
e
t
h
ick
n
e
s
s
(T
ox
),
d
o
p
in
g
co
n
ce
n
t
r
atio
n
in
c
h
an
n
el,
s
o
u
r
ce
a
n
d
d
r
ain
,
a
n
d
f
i
n
all
y
th
e
te
m
p
er
at
u
r
e
(
T
)
)
,
T
ab
le
1
illu
s
tr
ate
all
p
ar
a
m
eter
s
of
Fin
FET
th
at
h
a
s
b
ee
n
u
s
ed
in
th
e
s
i
m
u
lat
io
n
,
af
ter
s
i
m
u
latio
n
co
m
p
lete,
t
h
e
I
-
V
d
ata
w
il
l
h
a
v
e
p
r
o
d
u
ce
d
d
ep
en
d
in
g
on
p
ar
a
m
eter
s
e
n
te
r
ed
to
th
e
s
o
f
t
w
ar
e.
Fin
all
y
,
t
h
e
o
p
ti
m
ized
v
al
u
es
w
er
e
f
o
u
n
d
to
o
p
tim
ize
t
h
e
Fi
n
FET
ch
an
n
el
as
te
m
p
er
atu
r
e
n
an
o
-
s
e
n
s
o
r
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8708
I
n
t J
E
lec
&
C
o
m
p
E
n
g
,
Vo
l.
10
,
No
.
6
,
Decem
b
er
2020
:
5
6
5
0
-
5
6
5
7
5652
T
ab
le
1.
P
ar
am
eter
s
of
Fin
FE
T
u
s
ed
in
th
is
s
t
u
d
y
P
a
r
a
me
t
e
r
V
a
l
u
e
s
T
e
mp
e
r
a
t
u
r
e
s
T
2
5
0
,
2
7
5
,
3
0
0
,
3
2
5
,
3
5
0
,
3
7
5
a
n
d
400
K
o
W
o
r
k
i
n
g
v
o
l
t
a
g
e
V
DD
0
–
5
V
w
i
t
h
0
.
2
5
V
s
t
e
p
s
C
h
a
n
n
e
l
l
e
n
g
t
h
Lg
85
nm
S
o
u
r
c
e
a
n
d
D
r
a
i
n
l
e
n
g
t
h
s
50
nm
O
x
i
d
e
t
h
i
c
k
n
e
ss
T
ox
(
S
i
O
2
)
2
.
5
n
m
G
a
t
e
F
i
n
w
i
d
t
h
W
F
5
,
1
0
,
2
0
,
4
0
a
n
d
80
nm
C
h
a
n
n
e
l
c
o
n
c
e
n
t
r
a
t
i
o
n
(Si
P
-
t
y
p
e
)
10
16
cm
−3
S
o
u
r
c
e
a
n
d
D
r
a
i
n
c
o
n
c
e
n
t
r
a
t
i
o
n
(Si
N
-
t
y
p
e
)
10
19
cm
−3
3.
RE
SU
L
T
S
AND
D
I
SCU
SS
I
O
NS
In
t
h
is
r
esear
ch
,
t
h
e
I
d
–
V
g
c
h
a
r
ac
ter
is
tics
of
Fi
n
FET
at
t
h
e
t
e
m
p
er
atu
r
es
of
250,
275,
3
0
0
,
325,
350,
375
an
d
4
0
0
K
°
ar
e
s
im
u
lated
w
it
h
t
h
e
f
o
llo
w
i
n
g
p
ar
a
m
e
ter
s
:
ch
a
n
n
e
l
len
g
t
h
=
85
n
m
,
ch
a
n
n
el
co
n
ce
n
tr
atio
n
(P
-
t
y
p
e)
=
10
16
cm
−3
,
s
o
u
r
ce
a
n
d
d
r
ain
len
g
t
h
s
=
50
n
m
,
s
o
u
r
ce
an
d
d
r
ain
co
n
ce
n
tr
atio
n
(N
-
t
y
p
e)
=
10
19
cm
−3
a
n
d
o
x
id
e
th
ic
k
n
e
s
s
=
2
.
5
n
m
.
T
h
e
g
ate
Fin
w
id
t
h
v
al
u
e
s
ar
e
W
F
=
5
,
1
0
,
2
0
,
4
0
an
d
80
n
m
.
Fig
u
r
es
3
-
7
s
h
o
w
t
h
e
ch
a
n
g
e
in
∆I
w
h
en
t
h
e
te
m
p
er
atu
r
e
i
n
cr
ea
s
ed
at
th
e
V
DD
r
an
g
e
of
0
–
5
V
w
it
h
0
.
2
5
V
s
tep
s
f
o
r
th
e
W
F
v
alu
e
s
of
5
,
1
0
,
2
0
,
4
0
an
d
80
n
m
.
As
s
h
o
w
n
by
t
h
e
f
i
g
u
r
es,
t
h
e
m
a
x
i
m
u
m
s
e
n
s
iti
v
itie
s
(
m
ax
∆I
)
ar
e
at
t
h
e
r
elati
v
el
y
lo
w
er
te
m
p
er
atu
r
es,
an
d
t
h
e
v
alu
es
d
ec
r
ea
s
ed
lin
ea
r
l
y
as
te
m
p
er
at
u
r
e
i
n
cr
ea
s
ed
f
o
r
all
V
DD
.
Fig
u
r
es
3
an
d
4
p
r
esen
t
th
e
m
ax
i
m
u
m
te
m
p
er
at
u
r
e
s
en
s
iti
v
it
y
v
al
u
es
at
V
DD
=
1
.
2
5
V
(W
F
=5
n
m
)
an
d
V
DD
=1
.
5
V
(W
=
1
0
n
m
)
;
f
o
llo
w
ed
by
Fi
g
u
r
es
5
a
n
d
6
at
V
DD
=
2
V
(W
F
=
20
nm)
an
d
V
DD
=
3
.
2
5
V
(W
F
=
40
n
m
;
a
n
d
f
i
n
all
y
,
Fi
g
u
r
e
7
at
V
DD
=5
V
(W
F
=
80
n
m
)
.
Fig
u
r
e
3
.
∆I
–
T
em
p
er
atu
r
e
ch
a
r
ac
ter
is
tics
of
F
in
FET
(W
F
=5
n
m
)
,
V
DD
r
a
n
g
e
of
0
–
5
V
w
ith
0
.
2
5
V
s
tep
s
Fig
u
r
e
4
.
∆I
–
T
em
p
er
atu
r
e
ch
a
r
ac
ter
is
tics
of
F
in
FET
(W
F
=
10
n
m
)
,
V
DD
r
an
g
e
of
0
–
5
V
w
i
th
0
.
2
5
V
s
tep
s
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J
E
lec
&
C
o
m
p
E
n
g
I
SS
N:
2088
-
8708
Temp
era
tu
r
e
ch
a
r
a
cteris
tic
s
o
f F
in
F
E
T b
a
s
ed
…
(
Yo
u
s
if A
ta
lla
)
5653
Fig
u
r
e
5
.
∆I
–
T
em
p
er
atu
r
e
ch
a
r
ac
ter
is
tics
of
F
in
FET
(W
F
=
20
n
m
)
,
V
DD
r
an
g
e
of
0
–
5
V
w
i
th
0
.
2
5
V
s
tep
s
Fig
u
r
e
6
.
∆I
–
T
em
p
er
atu
r
e
ch
a
r
ac
ter
is
tics
of
F
in
FET
(W
F
=
40
n
m
)
,
V
DD
r
an
g
e
of
0
–
5
V
w
i
th
0
.
2
5
V
s
tep
s
Fig
u
r
e
7
.
∆I
–
T
em
p
er
atu
r
e
ch
a
r
ac
ter
is
tics
of
F
in
FET
(W
F
=
80
n
m
)
,
V
DD
r
an
g
e
of
0
–
5
V
w
i
th
0
.
2
5
V
s
tep
s
Fig
u
r
es
8
-
12
s
h
o
w
t
h
e
c
h
an
g
es
in
∆I
w
it
h
d
ec
r
ea
s
i
n
g
V
DD
at
T
=
250,
2
7
5
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0
0
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3
2
5
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3
5
0
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375
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d
400
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an
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0
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0
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d
80
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m
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T
h
e
f
o
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w
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g
m
ax
i
m
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m
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en
s
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v
it
ies
(
m
ax
∆
I
)
w
er
e
o
b
s
er
v
ed
:
V
DD
=
1
.
2
5
V
(
W
F
=
5
n
m
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,
V
DD
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1
.
5
V
(
W
F
=
10
n
m
)
,
V
DD
=
2
V
(
W
F
=
20
n
m
)
,
V
DD
=
3
.
2
5
V
(
W
F
=
40
n
m
)
an
d
V
DD
=
5
V
(
W
F
=
80
n
m
)
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8708
I
n
t J
E
lec
&
C
o
m
p
E
n
g
,
Vo
l.
10
,
No
.
6
,
Decem
b
er
2020
:
5
6
5
0
-
5
6
5
7
5654
Fig
u
r
e
8
.
∆I
–
V
DD
ch
ar
ac
ter
is
ti
cs
of
Fi
n
FET
(W
F
=
5
n
m
)
Fig
u
r
e
9
.
∆I
–
V
DD
ch
ar
ac
ter
is
ti
cs
of
Fi
n
FET
(W
F
=
10
n
m
)
Fig
u
r
e
10
.
∆I
–
V
DD
ch
ar
ac
ter
is
tics
of
Fi
n
FET
(W
F
=
20
n
m
)
Fig
u
r
e
11
.
∆I
–
V
DD
ch
ar
ac
ter
is
tics
of
Fi
n
FET
(W
F
=
40
n
m
)
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J
E
lec
&
C
o
m
p
E
n
g
I
SS
N:
2088
-
8708
Temp
era
tu
r
e
ch
a
r
a
cteris
tic
s
o
f F
in
F
E
T b
a
s
ed
…
(
Yo
u
s
if A
ta
lla
)
5655
Fig
u
r
e
12
.
∆I
–
V
DD
ch
ar
ac
ter
is
tics
of
Fi
n
FET
(W
F
=
80
n
m
)
Fig
u
r
e
13
s
h
o
w
s
t
h
e
o
p
ti
m
u
m
o
p
er
atin
g
v
o
lta
g
e
(V
DD
)
b
ase
d
on
th
e
b
est
te
m
p
er
atu
r
e
s
en
s
itiv
it
y
a
n
d
ch
an
n
el
Fi
n
w
id
th
,
w
h
er
e
o
p
ti
m
al
V
DD
is
ass
o
ciate
d
w
i
th
th
e
te
m
p
er
at
u
r
e
s
en
s
iti
v
it
y
p
ea
k
s
s
h
o
w
n
in
Fig
u
r
es
8
-
12.
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h
e
tem
p
er
atu
r
e
s
en
s
iti
v
it
y
i
n
cr
ea
s
ed
lin
ea
r
l
y
w
i
th
all
th
e
r
an
g
e
of
ch
an
n
e
l
Fin
w
id
t
h
(5
-
80
n
m
)
.
So
,
th
e
lo
w
er
g
ate
Fin
w
id
t
h
(W
F
=5
n
m
)
w
it
h
h
i
g
h
er
s
en
s
iti
v
it
y
ca
n
ac
h
iev
ed
with
lo
w
er
w
o
r
k
in
g
v
o
ltag
e
(
V
DD
=1
.
2
5
V)
.
Fig
u
r
e
13
.
Op
tim
is
ed
o
p
er
atin
g
v
o
lta
g
e
V
DD
w
it
h
d
if
f
er
e
n
t
c
h
an
n
el
Fi
n
w
id
t
h
b
ased
on
b
est
te
m
p
er
at
u
r
e
s
en
s
it
iv
i
t
y
4.
CO
NCLU
SI
O
N
T
h
e
ef
f
ec
t
s
of
d
if
f
er
en
t
te
m
p
er
atu
r
es
(
2
5
0
,
2
7
5
,
3
0
0
,
3
2
5
,
350,
375
an
d
4
0
0
K°)
on
Fi
n
FET
ch
ar
ac
ter
is
tic
s
ar
e
s
t
u
d
ied
by
co
n
s
id
er
in
g
d
i
f
f
er
e
n
t
c
h
a
n
n
el
Fi
n
w
id
t
h
(
W
F
=
5
,
1
0
,
2
0
,
4
0
an
d
80
n
m
)
.
Fo
r
th
e
d
io
d
e
m
o
d
e
tr
an
s
i
s
to
r
co
n
n
ec
tio
n
an
d
in
cr
e
m
e
n
ts
f
o
r
th
e
cu
r
r
en
t
(
∆I
)
,
th
e
w
o
r
k
i
n
g
v
o
ltag
e
V
DD
m
u
s
t
in
cr
ea
s
e
w
it
h
in
cr
ea
s
in
g
t
h
e
g
ate
Fi
n
w
id
th
to
g
et
t
h
e
b
est
s
en
s
iti
v
it
y
,
so
th
e
lo
w
er
F
in
w
id
th
h
as
b
est
s
en
s
iti
v
it
y
w
it
h
lo
w
er
w
o
r
k
i
n
g
v
o
lta
g
e.
T
h
e
li
n
ea
r
r
elati
o
n
b
et
w
ee
n
te
m
p
er
at
u
r
e
s
e
n
s
itiv
it
y
a
n
d
w
o
r
k
i
n
g
v
o
ltag
e
h
as
b
ee
n
r
es
u
lt
in
t
h
is
s
tu
d
y
w
it
h
all
r
an
g
e
of
ch
a
n
n
e
l
Fin
w
id
t
h
W
F
=5
-
2
0
n
m
.
ACK
NO
WL
E
D
G
E
M
E
NT
S
T
h
is
w
o
r
k
w
as
s
u
p
p
o
r
ted
by
th
e
Min
i
s
tr
y
of
E
d
u
ca
tio
n
,
Ma
la
y
s
ia,
u
n
d
er
Fu
n
d
a
m
e
n
tal
R
esear
c
h
Gr
an
t
Sc
h
e
m
e
FR
G
S/1
/2
0
1
9
/T
K0
4
/UMP
/0
2
/1
5
(
Gr
an
t
I
D:
R
DU1
9
0
1
1
9
9
)
.
RE
F
E
R
E
NC
E
S
[1
]
G.
V.
A
n
g
e
lo
v
,
D.
N.
Nik
o
lo
v
,
a
n
d
M.
H.
Hristo
v
,
“
T
e
c
h
n
o
lo
g
y
a
n
d
M
o
d
e
li
n
g
of
No
n
c
las
sic
a
l
T
r
a
n
sisto
r
De
v
ice
s
,”
J
o
u
rn
a
l
of
El
e
c
trica
l
a
n
d
C
o
mp
u
t
e
r
En
g
i
n
e
e
rin
g
,
v
o
l.
2
0
1
9
,
p
p.
1
-
1
8
,
2
0
1
9
.
[2
]
J.
P.
Ro
jas
,
et
a
l.
,
“
No
n
p
lan
a
r
Na
n
o
sc
a
le
F
in
F
ield
Ef
fe
c
t
T
ra
n
sisto
rs
on
T
e
x
ti
le,
P
a
p
e
r,
W
o
o
d
,
S
t
o
n
e
,
a
n
d
V
i
n
y
l
v
ia
S
o
f
t
M
a
teria
l
-
En
a
b
led
Do
u
b
le
-
T
ra
n
sf
e
r
P
rin
ti
n
g
,”
ACS
N
a
n
o
,
v
o
l.
9,
n
o
.
5,
p
p
.
5
2
5
5
-
5
2
6
3
,
2
0
1
5
.
[3
]
M.
T.
Bo
h
r,
"
L
o
g
ic
T
e
c
h
n
o
l
o
g
y
S
c
a
li
n
g
to
C
o
n
t
in
u
e
M
o
o
re
'
s
L
a
w
,
"
IEE
E
2
n
d
El
e
c
tro
n
De
v
ice
s
T
e
c
h
n
o
l
o
g
y
a
n
d
M
a
n
u
f
a
c
tu
ri
n
g
C
o
n
fer
e
n
c
e
(
EDT
M
),
pp.
1
-
3,
2
0
1
8
.
[4
]
J.
M.
S
h
a
lf
a
n
d
R.
L
e
lan
d
,
"
Co
m
p
u
ti
n
g
b
e
y
o
n
d
M
o
o
re
'
s
L
a
w
,”
Co
m
p
u
ter
,
v
o
l
.
4
8
,
n
o
.
1
2
,
p
p
.
14
-
2
3
,
2
0
1
5
.
[5
]
L.
Eec
k
h
o
u
t,
"
Is
M
o
o
re
’s
L
a
w
S
lo
w
in
g
Do
w
n
?
W
h
a
t’s
Ne
x
t?
,"
IE
EE
M
icr
o
,
v
o
l.
3
7
,
n
o
.
4,
p
p
.
4
-
5,
2
0
1
7
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8708
I
n
t J
E
lec
&
C
o
m
p
E
n
g
,
Vo
l.
10
,
No
.
6
,
Decem
b
er
2020
:
5
6
5
0
-
5
6
5
7
5656
[6
]
K.
S.
S
a
n
d
h
a
,
a
n
d
S.
S
in
g
h
,
"
P
e
rf
o
r
m
a
n
c
e
a
n
a
l
y
sis
of
F
in
F
ET
b
a
se
d
S
RA
M
at
n
a
n
o
-
sc
a
led
tec
h
n
o
l
o
g
y
n
o
d
e
s
f
o
r
lo
w
p
o
w
e
r
h
i
g
h
s
p
e
e
d
IC
d
e
s
i
g
n
,"
I
n
t
e
r
n
a
t
i
o
n
a
l
J
o
u
r
n
a
l
of
E
n
g
i
n
e
e
r
i
n
g
&
T
e
c
h
n
o
l
o
g
y
,
v
o
l
.
7,
no.
4,
pp.
6
5
9
7
-
6602,
2018.
[7
]
B.
Yu
,
et
a
l
.
,
"
F
in
F
ET
S
c
a
li
n
g
to
l0
n
m
G
a
t
e
L
e
n
g
th
,"
In
ter
n
a
ti
o
n
a
l
El
e
c
tro
n
De
v
ice
s
M
e
e
ti
n
g
,
p
p
.
2
5
1
-
2
5
4
,
2
0
0
2
.
[8
]
C.
L
iu
,
et
a
l.
,
“
S
y
ste
m
a
ti
c
a
l
stu
d
y
of
14nm
F
in
F
ET
re
li
a
b
il
i
ty
:
F
ro
m
d
e
v
ice
lev
e
l
stre
s
s
to
p
ro
d
u
c
t
HT
OL
,”
IEE
E
In
ter
n
a
t
io
n
a
l
Relia
b
il
it
y
P
h
y
sic
s
S
y
mp
o
si
u
m,
p
p
.
2
F
.
3
.
1
-
2
F
.
3
.
5
,
2
0
1
5
.
[9
]
W.
L
u
,
J.
K.
Kim
,
J.
F.
Kle
m
,
S.
D.
Ha
w
k
in
s
a
n
d
J.
A.
d
e
l
A
la
m
o
,
“
A
n
In
G
a
S
b
p
-
c
h
a
n
n
e
l
F
in
F
ET
,”
IEE
E
In
ter
n
a
ti
o
n
a
l
E
lec
tro
n
De
v
i
c
e
s
M
e
e
ti
n
g
(
IEDM
),
pp
.
3
1
.
6
.
1
-
3
1
.
6
.
4
,
2
0
1
5
.
[1
0
]
T.
P.
Da
sh
,
S.
De
y
,
S.
Da
s,
E.
M
o
h
a
p
tra,
J.
Je
n
a
a
n
d
C.
K.
M
a
it
i
,
"
S
tres
s
T
u
n
in
g
in
Na
n
o
S
c
a
le
F
in
F
ET
s
at
7nm
,”
IEE
E
El
e
c
tro
n
De
v
ice
s
Ko
lka
ta
C
o
n
fer
e
n
c
e
(
EDKCON),
pp.
1
6
6
-
1
7
0
,
2
0
1
8
.
[1
1
]
X.
X
ie
a
n
d
J.
Ju
,
"
1
4
n
m
F
in
F
ET
d
e
v
ice
e
l
e
c
tro
n
ic
stu
d
y
,
"
C
h
in
a
S
e
mic
o
n
d
u
c
to
r
T
e
c
h
n
o
l
o
g
y
In
ter
n
a
t
io
n
a
l
Co
n
fer
e
n
c
e
(
CS
T
IC),
p
p
.
1
-
3,
2
0
1
6
.
[1
2
]
L.
H.
Bre
n
d
ler,
A.
L.
Zi
m
p
e
c
k
,
C.
M
e
in
h
a
rd
t
a
n
d
R.
Re
is,
"
M
u
lt
i
-
L
e
v
e
l
De
sig
n
In
f
lu
e
n
c
e
s
on
R
o
b
u
stn
e
ss
Ev
a
lu
a
ti
o
n
of
7nm
F
in
F
ET
T
e
c
h
n
o
l
o
g
y
,
"
IEE
E
T
ra
n
s
a
c
ti
o
n
s
on
Circ
u
it
s
a
n
d
S
y
ste
ms
I:
Reg
u
l
a
r
Pa
p
e
rs
,
v
o
l.
6
7
,
no.
2,
p
p
.
5
5
3
-
5
6
4
,
2
0
2
0
.
[1
3
]
G.
M
e
ij
e
r,
G.
W
a
n
g
,
a
n
d
F.
F
ru
e
tt
,
“
T
e
m
p
e
ra
tu
re
se
n
so
rs
a
n
d
v
o
lt
a
g
e
re
fe
re
n
c
e
s
i
m
p
le
m
e
n
ted
in
CM
O
S
tec
h
n
o
l
o
g
y
,
”
IEE
E
S
e
n
so
rs
J
.
,
v
o
l
.
1,
n
o
.
3,
p
p
.
2
2
5
–
2
3
4
,
2
0
0
1
.
[1
4
]
C.
N.
L
iao
,
C.
Ch
e
n
,
a
n
d
K.
N.
T
u
,
“
T
h
e
rm
o
e
lec
tri
c
c
h
a
ra
c
t
e
riza
ti
o
n
of
Si
t
h
in
f
il
m
s
in
sili
c
o
n
-
on
-
i
n
su
lato
r
w
a
f
e
r,
”
J.
Ap
p
l.
P
h
y
s.,
v
o
l.
8
6
,
no.
8
6
,
pp.
3
2
0
4
–
3
2
0
8
,
1
9
9
9
.
[1
5
]
M.
Y.
Do
g
h
ish
a
n
d
F.
D.
Ho
,
“A
c
o
m
p
re
h
e
n
siv
e
a
n
a
l
y
ti
c
a
l
m
o
d
e
l
f
o
r
m
e
tal
-
in
su
lato
r
-
se
m
ic
o
n
d
u
c
to
r
(
M
IS
)
d
e
v
ice
s,”
IEE
E
T
ra
n
s.
El
e
c
tro
n
D
e
v
ice
s,
v
o
l.
39,
n
o
.
1
2
,
p
p
.
2
7
7
1
–
2
7
8
0
,
1
9
9
2
.
[1
6
]
Y.
Ha
sh
i
m
,
a
n
d
O.
S
id
e
k
,
“
Eff
e
c
t
of
te
m
p
e
ra
tu
re
on
th
e
c
h
a
ra
c
ter
isti
c
s
of
sili
c
o
n
n
a
n
o
w
ire
tran
sisto
r
,”
J
o
u
rn
a
l
of
n
a
n
o
sc
ien
c
e
a
n
d
n
a
n
o
tec
h
n
o
l
o
g
y
,
v
o
l.
1
2
,
n
o
.
1
0
,
pp
.
7
8
4
9
-
7
8
5
2
,
2
0
1
2
.
[1
7
]
H.
T.
A
l
A
riq
i,
W.
A.
Ja
b
b
a
r,
Y.
Ha
sh
im
,
H.
Bi
n
M
a
n
a
p
,
“
Ch
a
n
n
e
l
L
e
n
g
th
-
Ba
se
d
Co
m
p
a
ra
ti
v
e
A
n
a
l
y
sis
of
T
e
m
p
e
r
a
tu
re
a
n
d
El
e
c
tri
c
a
l
Ch
a
ra
c
teristics
f
o
r
S
iNWT
a
n
d
Ge
N
WT
,”
In
ter
n
a
ti
o
n
a
l
J
o
u
rn
a
l
of
Co
mp
u
t
in
g
a
n
d
Dig
it
a
l
S
y
ste
ms
,
v
o
l.
9,
n
o
.
1,
p
p
.
89
-
95,
2
0
2
0
.
[1
8
]
G.
C.
M
e
ij
e
r,
G.
Wan
g
,
a
n
d
F.
F
ru
e
tt
,
"
T
e
m
p
e
ra
tu
re
se
n
so
rs
a
n
d
v
o
lt
a
g
e
re
f
e
re
n
c
e
s
i
m
p
le
m
e
n
ted
in
C
M
OS
tec
h
n
o
l
o
g
y
,
"
IEE
E
se
n
so
rs
jo
u
rn
a
l,
v
o
l
.
1,
n
o
.
3,
p
p
.
2
2
5
-
2
3
4
,
2
0
0
1
.
[1
9
]
H.
T.
A
l
A
riq
i,
W.
A.
Ja
b
b
a
r,
Y.
Ha
sh
i
m
,
a
n
d
H.
B.
M
a
n
a
p
,
"
T
e
m
p
e
ra
tu
re
Ch
a
ra
c
teristics
of
S
il
i
c
o
n
Na
n
o
w
ire
T
ra
n
sisto
r
De
p
e
n
d
i
n
g
on
Ox
id
e
T
h
ick
n
e
ss
,
"
J
o
u
rn
a
l
of
n
a
n
o
-
a
n
d
e
lec
tro
n
ic
p
h
y
sic
s,
v
o
l.
11,
n
o
.
3,
p
p
.
1
-
4,
2
0
1
9
.
[2
0
]
Y.
Ha
sh
i
m
,
a
n
d
O.
S
id
e
k
,
“
Te
m
p
e
ra
tu
re
e
ffe
c
t
on
IV
c
h
a
ra
c
terist
ics
of
Si
n
a
n
o
w
ire
tran
sisto
r
,”
IE
EE
Co
ll
o
q
u
i
u
m
on
H
u
ma
n
it
ies
,
S
c
ien
c
e
a
n
d
E
n
g
i
n
e
e
rin
g
(
CHU
S
ER
),
pp
.
3
3
1
-
3
3
4
,
2
0
1
1
.
[2
1
]
M.
Be
sc
o
n
d
,
K.
Ne
h
a
ri,
J.L
.
Au
tran
,
N.
Ca
v
a
ss
il
a
s,
D.
M
u
n
te
a
n
u
,
M.
L
a
n
n
o
o
,
“
3
D
q
u
a
n
tu
m
m
o
d
e
li
n
g
a
n
d
sim
u
latio
n
of
m
u
lt
ip
le
-
g
a
te
n
a
n
o
w
ire
M
OSF
ET
s,”
IEDM
T
e
c
h
n
ica
l
Dig
e
st.
IEE
E
In
ter
n
a
ti
o
n
a
l
El
e
c
tro
n
De
v
ice
s
M
e
e
ti
n
g
,
2
0
0
4
.
,
S
a
n
Fr
a
n
c
isc
o
,
C
A,
p
p
.
6
1
7
-
6
2
0
,
2
0
0
4
.
[2
2
]
H.
M.
F
a
h
a
d
,
C.
Hu
,
a
n
d
M.
M.
Hu
ss
a
in
,
“
S
im
u
latio
n
S
tu
d
y
of
a
3
-
D
De
v
ice
In
teg
ra
ti
n
g
F
in
F
ET
a
n
d
UT
BF
ET
,”
IEE
E
T
ra
n
sa
c
ti
o
n
s
On
El
e
c
tro
n
De
v
ice
s
,
v
o
l.
62,
n
o
.
1,
p
p
.
83
-
8
7
,
2
0
1
5
.
[2
3
]
J.
A
l
v
a
ra
d
o
,
J.
C.
T
in
o
c
o
,
S.
S
a
las
,
A.
G.
M
a
rti
n
e
z
-
L
o
p
e
z
,
B.
S.
S
o
t
o
-
Cru
z
,
A.
Ce
rd
e
ira
a
n
d
J.
-
P.
Ra
sk
in
,
“
S
OI
F
in
F
ET
c
o
m
p
a
c
t
m
o
d
e
l
fo
r
RF
c
ircu
it
s
sim
u
latio
n
,”
IEE
E
1
3
t
h
T
o
p
ica
l
M
e
e
ti
n
g
on
S
il
i
c
o
n
M
o
n
o
li
t
h
ic
In
teg
ra
te
d
Circ
u
it
s
in
RF
S
y
ste
ms
(
S
iR
F),
p
p
.
87
–
8
9
,
2
0
1
3
.
[2
4
]
S
u
n
g
G
e
u
n
Kim
,
G
e
rh
a
rd
Klime
c
k
,
S
riram
a
n
Da
m
o
d
a
ra
n
,
a
n
d
Be
n
jam
in
P
.
Ha
ley
,
"
M
u
G
F
E
T
,
"
2
0
1
4
.
[
On
li
n
e
]
.
Av
a
i
la
b
le:
h
tt
p
s://
n
a
n
o
h
u
b
.
o
rg
/res
o
u
rc
e
s/NA
NO
F
INFE
T
[2
5
]
Y
.
Ha
sh
i
m
,
“
Op
ti
m
i
z
a
ti
o
n
of
Re
sista
n
c
e
L
o
a
d
in
4T
-
S
tatic
Ra
n
d
o
m
-
Ac
c
e
s
s
M
e
m
o
r
y
C
e
ll
B
a
se
d
on
S
il
ico
n
Na
n
o
w
ire
T
r
a
n
sisto
r
,”
J
o
u
r
n
a
l
of
Na
n
o
sc
ien
c
e
a
n
d
Na
n
o
tec
h
n
o
l
o
g
y
,
v
o
l.
1
8
,
n
o
.
2,
p
p
.
1
1
9
9
–
1
2
0
1
,
2
0
1
8
.
B
I
O
G
RAP
H
I
E
S
OF
AUTH
O
RS
Yo
u
sif
Ata
ll
a
,
th
e
a
u
th
o
r
w
a
s
b
o
rn
at
Ira
q
,
he
re
c
e
iv
e
d
th
e
B.
S
c
.
of
En
g
in
e
e
rin
g
in
El
e
c
tro
n
ics
a
n
d
C
o
m
m
u
n
ica
ti
o
n
s
E
n
g
in
e
e
rin
g
f
ro
m
En
g
in
e
e
rin
g
T
e
c
h
n
ica
l
Co
ll
e
g
e
,
Ira
q
.
He
c
o
m
p
lete
d
th
e
M
.
S
c
.
in
E
lec
tro
n
ics
E
n
g
in
e
e
rin
g
-
M
icro
a
n
d
Na
n
o
-
e
lec
tro
n
i
c
s
f
ro
m
Un
iv
e
rsiti
M
a
la
y
sia
P
a
h
a
n
g
(UM
P
),
P
a
h
a
n
g
,
M
a
lay
sia
.
He
is
c
u
rre
n
tl
y
w
o
r
k
in
g
as
a
Dire
c
to
r
of
th
e
En
g
in
e
e
rin
g
Aff
a
irs
D
e
p
a
rtme
n
t
-
S
a
lah
Al
-
Din
G
o
v
e
rn
o
ra
te
Co
u
n
c
il
,
Ira
q
.
H
is
re
se
a
rc
h
in
tere
sts
in
c
lu
d
e
M
icro
e
lec
tro
n
ics
a
n
d
Na
n
o
e
lec
tro
n
ic:
F
i
n
F
ET
tran
sisto
r
.
Ya
sir
H
a
s
h
i
m
,
th
e
a
u
th
o
r
w
a
s
b
o
rn
at
Ira
q
,
1
9
6
9
,
he
re
c
e
iv
e
d
th
e
B.
S
c
.
a
n
d
M
a
ste
r
of
En
g
in
e
e
rin
g
in
El
e
c
tro
n
ics
a
n
d
Co
m
m
u
n
ica
ti
o
n
s
En
g
in
e
e
rin
g
f
ro
m
th
e
Un
iv
e
rsit
y
of
M
o
su
l,
M
o
su
l
,
Ira
q
,
in
1
9
9
1
a
n
d
1
9
9
5
re
sp
e
c
ti
v
e
l
y
.
He
c
o
m
p
lete
d
th
e
P
h
.
D
.
in
El
e
c
tro
n
ics
En
g
in
e
e
rin
g
-
M
icro
a
n
d
Na
n
o
-
e
l
e
c
tro
n
ics
f
ro
m
Un
iv
e
r
siti
S
c
ien
c
e
Ma
la
y
sia
(USM
),
P
e
n
a
n
g
,
M
a
la
y
sia
,
in
2
0
1
3
.
He
is
c
u
rre
n
tl
y
a
S
e
n
io
r
L
e
c
tu
re
r
in
th
e
F
a
c
u
lt
y
of
En
g
in
e
e
rin
g
,
T
ish
k
In
tern
a
ti
o
n
a
l
U
n
iv
e
rsity
,
Erb
il
-
Ku
rd
istan
,
Ira
q
.
His
re
se
a
rc
h
in
tere
sts
in
c
lu
d
e
M
icro
e
lec
tro
n
ics
a
n
d
Na
n
o
e
lec
tro
n
ic:
Na
n
o
w
ire
tra
n
sisto
rs,
F
i
n
F
ET
tran
sisto
r,
M
u
lt
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sta
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e
L
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c
Na
n
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in
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.
T
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.
D
lev
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g
(UMP
)
,
M
a
lay
sia
.
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re
se
a
rc
h
in
tere
st
in
c
l
u
d
e
s
a
p
p
li
e
d
e
lec
t
ro
n
ics
,
e
m
b
e
d
d
e
d
sy
ste
m
,
o
p
ti
m
iza
ti
o
n
a
n
d
sim
u
latio
n
,
ro
b
o
ti
c
s,
a
n
d
re
h
a
b
il
it
a
ti
o
n
d
e
v
ice
s.
T
h
e
a
u
th
o
r
h
a
s
tea
c
h
in
g
e
x
p
e
rien
c
e
in
u
n
d
e
rg
ra
d
u
a
te
f
i
e
ld
s
of
El
e
c
tri
c
a
l
a
n
d
El
e
c
tro
n
ics
En
g
in
e
e
rin
g
f
o
r
5
y
e
a
rs
a
n
d
su
p
e
rv
ise
d
p
o
stg
ra
d
u
a
te
stu
d
e
n
ts
in
b
o
t
h
M
a
ste
r
a
n
d
P
h
D
lev
e
ls.
Wa
h
e
b
A.
J
a
b
b
a
r
re
c
e
iv
e
d
th
e
B.
S
c
.
in
El
e
c
tri
c
a
l
En
g
in
e
e
rin
g
f
r
o
m
th
e
Un
iv
e
rsit
y
of
Ba
sra
h
,
Ira
q
,
in
2
0
0
1
,
t
h
e
M
.
E
n
g
.
in
Co
m
m
u
n
ica
ti
o
n
&
Co
m
p
u
ter
a
n
d
t
h
e
P
h
.
D.
in
El
e
c
tri
c
a
l,
El
e
c
tro
n
ics
,
a
n
d
S
y
ste
m
En
g
in
e
e
rin
g
f
ro
m
Un
iv
e
rsiti
Ke
b
a
n
g
sa
a
n
M
a
lay
si
a
(UK
M
),
Ba
n
g
i,
S
e
lan
g
o
r,
M
a
lay
si
a
,
in
2
0
1
1
a
n
d
2
0
1
5
re
sp
e
c
ti
v
e
ly
.
He
is
c
u
rre
n
tl
y
a
S
e
n
io
r
L
e
c
tu
re
r
in
th
e
F
a
c
u
lt
y
of
En
g
in
e
e
rin
g
T
e
c
h
n
o
l
o
g
y
,
Un
iv
e
rsiti
M
a
la
y
sia
P
a
h
a
n
g
(UM
P
),
G
a
m
b
a
n
g
,
P
a
h
a
n
g
,
M
a
lay
sia
.
His
re
se
a
rc
h
in
tere
sts
in
c
l
u
d
e
R
o
u
ti
n
g
P
ro
to
c
o
ls
in
Ad
Ho
c
Ne
tw
o
rk
s,
M
o
b
i
le
Co
m
m
u
n
ica
ti
o
n
s
a
n
d
W
irele
ss
Ne
t
w
o
rk
in
g
.
He
a
lso
h
a
s
a
k
e
e
n
in
tere
st
in
Na
n
o
e
lec
tro
n
ics
,
In
ter
n
e
t
of
T
h
in
g
s
a
p
p
li
c
a
ti
o
n
s,
a
n
d
S
m
a
rt
Cit
y
.
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