Inter
national
J
our
nal
of
Electrical
and
Computer
Engineering
(IJECE)
V
ol.
6,
No.
4,
August
2016,
pp.
1499
–
1505
ISSN:
2088-8708,
DOI:
10.11591/ijece.v6i4.9797
1499
I
ns
t
it
u
t
e
o
f
A
d
v
a
nce
d
Eng
ine
e
r
i
ng
a
nd
S
cie
nce
w
w
w
.
i
a
e
s
j
o
u
r
n
a
l
.
c
o
m
MOCCCDT
A-based
Curr
ent
Mode
T
unable
Uni
v
ersal
Biquad
Filter
f
or
Bluetooth
A
pplications
Jy
oti
Sharma
and
Shantanu
Chakraborty
Department
of
ECE,
BIT
Mesra,
Jaipur
Campus,
India
Article
Inf
o
Article
history:
Recei
v
ed
Feb
5,
2016
Re
vised
May
22,
2016
Accepted
Jun
8,
2016
K
eyw
ord:
MOCCCDT
A
Current
mode
Biquad
Filter
T
unability
Bluetooth
Standard
ABSTRA
CT
In
the
last
decade,
there
has
been
much
ef
fort
to
reduce
the
supply
v
oltage
of
electronic
cir
-
cuits
due
to
the
demand
for
portable
and
battery-po
wered
equipment.
Since
a
lo
w-v
oltage
operating
circuit
becomes
necessary
,
the
current-mode
technique
is
ideally
suited
for
this
purpose
more
than
the
v
oltage-mode
one.
In
this
paper
,
perform
ance
of
multi
output
cur
-
rent
controlled
current
dif
ferencing
transconductance
amplifier
(MOCCCDT
A)
is
e
v
aluated
using
180nm,
90nm
and
45nm
CMOS
technology
.
It
is
found
that
the
45nm
CMOS-based
MOCCCDT
A
pro
vides
highest
frequenc
y
i.e.
33GHz.
Further
a
Uni
v
ersal
biquad
filter
has
been
designed
using
a
single
MOCCCDT
A
as
an
acti
v
e
element
and
tw
o
capacitors.
Fil-
ter
of
fers
high
frequenc
y
in
GHz.
T
unability
of
all
the
filter
outputs
with
respect
to
a
bias
current
has
been
analyzed.
The
tunability
of
the
filter
circuit
for
Bluetooth
applications
is
also
sho
wn
in
this
w
ork.
The
performances
of
MOCCCDT
A
circuit
and
Uni
v
ersal
biquad
filter
are
illustrated
by
HSPICE.
The
simulation
results
are
found
to
be
in
agreement
with
the
theoretical
predictions.
Copyright
c
2016
Institute
of
Advanced
Engineering
and
Science
.
All
rights
r
eserved.
Corresponding
A
uthor:
Jyoti
Sharma
Assistant
Professor
BIT
Mesra,
Jaipur
Campus
9929655006
jyotisharma@bitmesra.ac.in
1.
INTR
ODUCTION
W
ith
the
adv
ent
of
inte
grated
circuit
technology
,
it
has
becom
e
possible
to
design
lar
ger
electronic
circuits
on
a
single
chip.
Mix
ed-signal
ICs
are
chips
that
contain
both
digital
and
analog
circuits
on
the
same
chip.
All
the
abo
v
e
mentioned
circuits
can
be
designed
indi
vidually/
on
a
single
chip
by
using
either
v
oltage
mode
or
current
mode
techniques.
Similarly
,
the
general
trend
in
CMOS
technology
is
to
mak
e
the
de
vices
smaller
and
smaller
to
increase
the
density
and
speed
of
digital
circuits.
It
is
also
common
to
reduce
the
thickness
of
the
g
ate
oxide
in
order
to
increase
the
dri
ving
capability
of
the
transistor
[1]-
[3].
In
addition,
the
t
hickness
reduction
implies
that
the
supply
v
oltage
must
be
decreased
to
a
v
oid
e
xcessi
v
e
electric
field
in
the
de
vices.
Also
the
number
of
components
is
increasing
on
a
single
chip,
b
ut
it
can
only
dissipate
a
limited
amount
of
po
wer
per
unit
area.
Since
the
increasing
density
of
components
allo
ws
more
electronic
functions
per
unit
area,
the
po
wer
per
electronic
function
has
to
be
lo
wered
in
order
to
pre
v
ent
o
v
erheating
of
the
chip
[4]-
[6].
Earlier
the
operational
amplifier
(O
A)
has
s
erv
ed
as
the
basic
v
oltage
mode
b
uilding
block
in
analog
circuit
design
[1]-
[3].
V
oltage-mode
operational
amplifier
(O
A)
circuits
ha
v
e
li
mited
bandwidth
at
high
closed-loop
g
ains
due
to
the
constant
g
ain-bandwidth
product.
The
moderate
sle
w-rate
of
the
operational
amplifier
limits
the
lar
ge-
signal,
high
frequenc
y
operation.
Also
in
the
applications
where
wide
bandwidth
is
required,
lo
w
po
wer
consumption
and
lo
w
v
oltage
operation
are
needed
simultaneously
.
In
that
case,
v
oltage-mode
operational
amplifier
becomes
too
comple
x.
Therefore,
v
oltage
mode
circuits
based
on
operational
amplifier
(O
A)
are
not
suitable
for
use
in
high
fre-
quenc
y
applications.
Thus
their
limited
performance
as
mentioned
abo
v
e,
led
the
analog
designer
to
search
for
other
possibilities
and
other
b
uilding
blocks
[7].
V
oltage-mode
circuits
are
those
in
which
signal
information
is
represented
by
v
oltage
at
the
nodes
of
the
circuit,
where
as
in
current-mode
circui
ts,
signal
information
is
represented
by
current
o
wing
in
the
branches
of
the
circuit.
In
current
mode
circuits
(CMCs)
the
complete
circuit
response
is
determined
by
J
ournal
Homepage:
http://iaesjournal.com/online/inde
x.php/IJECE
I
ns
t
it
u
t
e
o
f
A
d
v
a
nce
d
Eng
ine
e
r
i
ng
a
nd
S
cie
nce
w
w
w
.
i
a
e
s
j
o
u
r
n
a
l
.
c
o
m
Evaluation Warning : The document was created with Spire.PDF for Python.
1500
ISSN:
2088-8708
the
currents
and
the
input/
output
signals
are
primarily
represented
in
current
form.
CMCs
ha
v
e
simple
architecture
and
their
operations
do
not
depend
on
the
supply
v
oltages
[6]-
[7].
The
current
mode
circuits
als
o
of
fer
high
linearity
,
wide
bandwidth,
lo
wer
po
wer
consumption,
simpler
circuitry
and
better
high
frequenc
y
performance
[2,
8–11].
In
this
w
ork,
a
CMOS-based
Multi
Output
Current
Controlled
Current
Dif
ferencing
T
ransconductance
Am-
plifier
(MOCCCDT
A)
has
been
presented.
Performance
e
v
aluation
of
MOCCCDT
A
has
been
carried
out
using
HSPICE
through
T
ransient
and
A
C
responses.
Ne
xt
a
uni
v
ersal
bi
quad
filter
has
been
designed
using
MOCCCDT
A
that
is
capable
of
generating
lo
w-pass,
high-pass,
band-pass
and
band-reject
responses.
Circuit
uses
only
a
single
MOCCCDT
A
and
tw
o
capacitor
and
no
resistors.
The
proposed
circuit
of
fers
se
v
eral
adv
antages
such
as
minimum
number
of
acti
v
e
and
passi
v
e
components
required,
appropriate
for
high
frequenc
y
operation
in
GHz
and
resistor
less
implementation.
The
paper
is
arranged
as
follo
ws.
Section
II
presents
brief
description
of
MOCCCDT
A.
Section
III
discusses
the
uni
v
ersal
biquad
filter
.
The
simulation
results
of
all
the
filter
responses
are
discussed
in
section
IV
.
The
tunability
of
filter
responses
with
the
v
ariation
of
bias
current
is
also
presented
in
section
IV
.
Section
V
sho
ws
the
tuning
of
band
pass
filter
for
Bluetooth
applications.
Section
VI
concludes
the
paper
.
2.
BRIEF
INTR
ODUCTION
T
O
MUL
TI
OUTPUT
CURRENT
CONTR
OLLED
CURRENT
DIFFERENC-
ING
TRANSCONDUCT
ANCE
AMPLIFIER
(MOCCCDT
A)
The
MOCCCDT
A
consists
of
the
current
dif
ferencing
transconductance
amplifier
(CDT
A)
as
the
basic
b
uild-
ing
block.
The
CDT
A
tak
es
tw
o
inputs
Ip
and
In
as
currents
and
produces
the
current
Iz
at
the
impedence
terminal.
The
current
I
z
is
proportional
to
the
dif
ference
between
the
input
currents.
An
equi
v
alent
v
oltage
V
z
is
produced
on
the
impedence
terminal
due
to
the
finite
resistance
of
the
terminal
and
the
v
oltage
drop
across
it.
The
v
oltage
Vz
so
generated
is
then
trans-conducted
ac
ross
to
the
output
terminal
and
the
output
current
thus
produced
is
proportional
to
the
v
alue
of
transconductance
across
the
circuit
gi
v
en
by
g
m
.
It
has
finite
input
resistances
Rp
and
Rn
at
input
termi-
nals.
These
parasitic
resistances
are
equal
and
can
be
controlled
by
biasing
currents.
The
MOCCCDT
A
is
represented
by
a
set
of
characteristic
equation
sho
wn
in
Eq.1.
V
p
=
V
n
=
0;
I
z
=
I
p
I
n
;
I
x
=
g
m
V
z
(1)
where
p
and
n
are
input
terminals,
z
and
x
are
output
terminals
and
g
m
is
the
transconductance
g
ain.
The
parasitic
resistances
R
p
;
R
n
and
the
transconductance
g
ain
g
m
are
gi
v
en
by
Eq.
2
and
3.
R
p
=
R
n
=
V
T
2
I
B
1
(2)
g
m
=
I
B
2
2
V
T
(3)
where
I
B
1
and
I
B
2
are
the
bias
currents
of
the
MOCC
CDT
A
and
V
T
is
the
thermal
v
oltage
.
The
basic
b
uilding
block
of
the
MOCCCDT
A
is
sho
wn
in
Fig.
1
where
Ip
and
In
are
the
tw
o
input
currents
and
Iz
is
the
transimpedence
current
produced.
At
x
terminal,
we
see
that
the
output
current
is
either
in
in
v
erted
mode
or
in
non-
in
v
erted
mode
which
is
proportional
to
the
transconductance.
Figure
1.
Block
Diagram
of
Multi-output
Current
Controlled
Current
Dif
ferencing
T
ransconductance
Amplifier
Fig.
2
sho
ws
the
internal
CMOS
based
circuit
of
MOCCCDT
A.
Port
p
and
n
are
the
input
ports
and
Z1,
Z2
and
Z3
are
the
positi
v
e
and
ne
g
ati
v
e
output
current
ports.
Port
X
is
also
the
output
current
port.
IB1
and
IB2
are
the
bias
currents.
IJECE
V
ol.
6,
No.
4,
August
2016:
1499
–
1505
Evaluation Warning : The document was created with Spire.PDF for Python.
IJECE
ISSN:
2088-8708
1501
Figure
2.
Internal
Circuit
of
Multi-output
Current
Controlled
Current
Dif
ferencing
T
ransconductance
Amplifier
3.
UNIVERSAL
BIQ
U
AD
FIL
TER
The
current
mode
uni
v
ersal
biquad
filter
is
designed
using
single
MOCCCDT
A
as
an
acti
v
e
element
and
tw
o
grounded
capacitors,
which
is
easy
to
f
abricate.
The
block
diagram
of
the
filter
is
sho
wn
in
Fig.
3.
In
this
filter
,
the
multi-output
CCCDT
A
of
Fi
g.
2
is
used
where
currents
I
z
2
and
I
z
3
are
obtained
in
opposite
dir
ections
from
I
z
1
.
Capacitors
are
used
for
high
pass
and
band
pass
applications.
Figure
3.
Block
Diagram
of
Uni
v
ersal
Biquad
Filter
The
transfer
functions
of
high-pass,
lo
w-pass
and
band-pass
filters
are
gi
v
en
in
Eq.
4-6.
I
H
P
I
in
=
s
2
s
2
+
s
C
1
R
n
+
g
m
C
1
C
2
R
n
(4)
I
LP
I
in
=
g
m
C
1
C
2
R
n
s
2
+
s
C
1
R
n
+
g
m
C
1
C
2
R
n
(5)
I
B
P
I
in
=
s
C
1
R
n
s
2
+
s
C
1
R
n
+
g
m
C
1
C
2
R
n
(6)
The
band-reject
transfer
function
may
be
achie
v
ed
by
IBR=
Iin-IBP
and
is
gi
v
en
in
Eq.7.
I
B
R
I
in
=
s
2
+
g
m
C
1
C
2
R
n
s
2
+
s
C
1
R
n
+
g
m
C
1
C
2
R
n
(7)
MOCCCDT
A-based
Curr
ent
Mode
T
unable
Univer
sal
Biquad
F
ilter
for
...
(Jyoti
Sharma)
Evaluation Warning : The document was created with Spire.PDF for Python.
1502
ISSN:
2088-8708
The
pole
frequenc
y
!
0
and
quality
f
actor
Q
are
gi
v
en
in
Eq.
8
and
9.
!
0
=
r
g
m
C
1
C
2
R
n
=
s
n
p
8
I
B
1
I
B
2
C
1
C
2
(8)
Q
=
r
C
1
g
m
R
n
C
2
=
s
C
1
p
I
B
2
C
2
p
8
I
B
1
(9)
4.
RESUL
TS
AND
DISCUSSIONS
The
MOCCCDT
A
circuit
has
been
implemented
in
180nm,
90nm
and
45nm
CMOS
technology
.
In
order
to
ascertain
the
correct
operation
of
the
CMOS-
based
MOCCCDT
A,
transient
and
A
C
analyses
were
carried
out
using
HSPICE.
T
ransient
analysis
has
been
carried
out
with
100
MHz
sinusoidal
input,
for
which
the
current
relationship
equations
i.e.
I
z
=
I
p
I
n
and
I
x
=
g
m
V
z
are
successfully
v
erified
for
all
the
three
technology
nodes.
A
C
analysis
for
the
CMOS-based
MOCCCDT
A
re
v
eals
e
xcellent
conformity
between
the
input
currents
(
I
p
andI
n
)
and
the
output
current
(
I
x
)
till
about
1GHz,
5Ghz
and
10
GHz
for
180nm,
90nm
and
45nm
technology
nodes
respecti
v
ely
.
The
simulation
results
of
transient
and
A
C
analyses
of
MOCCCDT
A
are
sho
wn
in
Fig.
4.
(a)
T
ransient
Res
ponse
at
180nm
T
echnology
(b)
T
ransient
Respons
e
at
90nm
T
echnology
(c)
T
ransient
Response
at
45nm
T
echnology
(d)
A
C
Response
at
180nm,
90nm
and
45nm
T
echnology
Figure
4.
Results
of
HSPICE
simulations
for
Z
+
,
Z
and
X
outputs
of
the
MOCCCDT
A
of
Fig.
2:
(a)T
ransient
Analysis
at
180nm
(b)
T
ransient
Analysis
at
90nm
(c)
T
ransient
Analysis
at
45nm
and
(d)
A
C
Analysis
at
180nm,
90nm,
45nm
T
echnology
The
v
alues
of
po
wer
supplies,
bias
currents
and
bandwidth
obtained
for
dif
ferent
technologies
are
sho
wn
in
T
able
1.
It
is
observ
ed
that
MOCCCDT
A
circuit
of
fers
highest
bandwidth
among
three
for
lo
wer
v
alues
of
po
wer
supplies
and
bias
current,
thus
more
ef
ficient.
T
able
1.
P
arameter
V
alues
for
Dif
ferent
T
echnologies
T
echnology
180nm
90nm
45nm
Vdd
1.25V
0.9V
0.45V
Vss
1.25V
0.9V
0.45V
Bias
Current
(
I
B
1
)
50
A
50
A
40
A
Bias
Current
(
I
B
2
)
80
A
60
A
40
A
Band
W
idth
(GHz)
6.6
15
33
IJECE
V
ol.
6,
No.
4,
August
2016:
1499
–
1505
Evaluation Warning : The document was created with Spire.PDF for Python.
IJECE
ISSN:
2088-8708
1503
The
uni
v
ersal
biquad
filter
circuit
of
Fig.
3
is
simulated
using
HSPICE
in
45
nm
technology
.
The
high-pass,
lo
w-pass,
band-pass
and
band-stop
responses
are
sho
wn
i
n
Fig.
5(a).
Ef
fect
of
v
ariation
in
the
filt
er
characteristics
with
bias
current
I
B
1
and
I
B
2
of
the
MOCCCDT
A
w
as
also
e
xplored
using
HSPICE
simul
ations.
Fig.
5(b)
depicts
the
change
in
v
arious
filter
characteristics
as
the
bias
currents
is
v
aried
from
10A
to
50A
in
steps
of
10A
for
all
the
four
filter
functions.
(a)
Band-Reject,
Lo
w-P
ass,
Band-P
ass
and
High-P
ass
F
ilter
Re-
sponses
(b)
V
ariation
in
Filter
Responses
with
the
V
ariation
in
Bias
Cur
-
rents
Figure
5.
Results
of
Responses
of
Filter
in
Fig.
3:
(a)Filter
Responses
in
45
nm
T
echnology
and
(b)Responses
of
v
arious
filter
functions
with
the
v
ariation
of
bias
currents
from
10
A
to
50
A
in
steps
of
10
A
T
able
2
sho
ws
the
v
alues
of
peak-frequenc
y
and
bandwidth
obtained
from
the
uni
v
ersal
biquad
filter
of
Fig.
3.
It
is
observ
ed
that
the
frequenc
y
obtained
is
in
GHz.
Thus
the
filter
is
suitable
for
high
frequenc
y
applications.
T
able
2.
Peak-frequenc
y
and
3dB
bandwidth
of
Uni
v
ersal
Biquad
Filter
Filter
Lo
w-P
ass
High-P
ass
Band-P
ass
Peak
Frequenc
y
(GHz)
1.27
3.34
2.36
Bandwidth
(GHz)
2.44
1.95
2.71
The
present
w
ork
[7,
12–15]
has
also
been
compared
with
the
w
ork
done
in
the
pre
vious
year
on
dif
ferent
technologies
according
to
the
acti
v
e
element
used,
bias
currents,
passi
v
e
elements
used
etc.
THe
comparison
has
been
sho
wn
in
table
6.
Figure
6.
Comparison
of
the
present
w
ork
with
the
pre
vious
w
orks
MOCCCDT
A-based
Curr
ent
Mode
T
unable
Univer
sal
Biquad
F
ilter
for
...
(Jyoti
Sharma)
Evaluation Warning : The document was created with Spire.PDF for Python.
1504
ISSN:
2088-8708
4.1.
TUNING
OF
B
AND
P
ASS
FIL
TER
FOR
BLUET
OO
TH
APPLICA
TION
Bluetooth
is
a
wireless
technology
standard
for
e
xchanging
data
o
v
er
short
distances
using
short-w
a
v
elength
UHF
radio
w
a
v
es
in
the
ISM
band
from
2.4
to
2.485
GHz
from
fix
ed
and
mobile
de
vices,
and
b
uilding
personal
area
netw
orks
(P
ANs).
In
v
ented
by
telecom
v
endor
Ericsson
in
1994,
it
w
as
originally
concei
v
ed
as
a
wireless
alternati
v
e
to
RS-232
data
cables.
It
can
connect
se
v
eral
de
vices,
o
v
ercoming
problems
of
synchronization.
The
uni
v
ersal
filter
circuit
of
Fig.
3
is
also
t
u
ne
d
for
Bluetooth
applications.
The
simulation
result
for
the
tuning
of
the
filter
for
Bluetooth
application
is
sho
wn
in
Fig.
7.
Figure
7.
T
uning
of
Band
P
ass
Filter
for
Bluetooth
Applications
5.
CONCLUSION
A
CMOS-based
implementation
of
multi
output
current
controlled
current
dif
ferencing
transconductance
am-
plifier
(MOCCCDT
A)
w
as
presented.
The
performance
comparison
of
MOCCCDT
A
has
been
done
by
performing
transient
and
A
C
analyses
for
180nm,
90nm
and
45nm
CMOS
technology
nodes
using
HSPICE
simulations.
It
w
as
found
that
the
MOCCCDT
A
circuit
of
fers
highest
bandwidth
at
45nm
CMOS
technology
node.
A
current
mode
uni-
v
ersal
biquad
filter
w
as
then
discussed
that
emplo
ys
a
MOCCCDT
A
as
an
acti
v
e
element
and
tw
o
grounded
capacitors.
The
filter
pro
vides
lo
w-pass,
high-pass,
band-pass
and
band-reject
responses.
Also
the
tunability
of
the
lo
w-pass,
high-
pass,
band-pass
and
band-reject
filter
w
as
analysed
by
v
arying
the
bias
current.
Ne
xt
the
tunability
of
the
fi
lter
for
the
Bluetooth
application
has
been
discussed.
The
filter
circuit
is
suitable
for
high
frequenc
y
Bluetooth
applications.
IJECE
V
ol.
6,
No.
4,
August
2016:
1499
–
1505
Evaluation Warning : The document was created with Spire.PDF for Python.
IJECE
ISSN:
2088-8708
1505
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en
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ile
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untman
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ir
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v
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umar
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ushw
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asta
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ariable
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BIOGRAPHIES
OF
A
UTHORS
Jy
oti
Sharma
is
Assistant
Professor
in
the
Department
of
ECE
at
BIT
MESRA,
Jaipur
Campus
with
Master
of
T
echnology
from
NIT
,
Jaipur
.
She
is
pursuing
Ph.D.
in
the
field
of
VLSI
Circuit
Design
from
BI
T
Mesra.
Her
researches
are
in
fields
of
electronics,
analog
systems,
VLSI
Circuits,
Nanotechnology
,
Current
Mode
Circuits.
She
is
a
member
of
the
IETE(Institution
for
Electronics
and
T
elecom
engineers)
Shantanu
Chakraborty
is
currently
persuing
his
under
graduate
de
gree
of
Bachelor
Of
Engineer
-
ing
in
Electronics
and
Communication
Engineering
at
BIT
MESRA,Jaipur
Cam
pus.
He
is
presently
a
student
member
of
the
IETE(Institution
for
Electronics
and
T
elecom
engineers)
and
has
acti
v
ely
participated
in
National
Students’
Congress
F
orum
or
g
anised
by
IETE
at
BIT
MESRA.
He
is
also
acti
v
ely
in
v
olv
ed
in
the
technical
committee
of
the
Uni
v
ersity
as
a
student
coordinator
.He
has
in-
v
olv
ed
himself
in
minor
project
w
orks
in
the
institution
as
a
student
coordinator
.
MOCCCDT
A-based
Curr
ent
Mode
T
unable
Univer
sal
Biquad
F
ilter
for
...
(Jyoti
Sharma)
Evaluation Warning : The document was created with Spire.PDF for Python.