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Me
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to
s
e
v
en
s
ta
ck
s
.
T
h
e
d
ielec
tr
ic
m
ater
ial
s
u
s
ed
in
th
is
w
o
r
k
ar
e
SiO
2
a
n
d
Si
3
N
4
f
o
r
lo
w
-
k
d
iele
ctr
ic
s
tack
in
g
a
n
d
A
l
2
O
3
a
n
d
Hf
O
2
f
o
r
h
ig
h
-
k
d
ielec
tr
ic
s
tack
in
g
.
T
h
e
d
ielec
tr
ic
s
tack
s
ar
e
ar
r
an
g
ed
w
it
h
i
n
c
r
ea
s
in
g
n
u
m
b
er
o
f
la
y
er
s
in
o
r
d
er
to
in
cr
ea
s
e
th
e
d
ev
ic
e
ca
p
ac
itan
ce
.
T
h
e
s
i
m
u
lat
io
n
s
ar
e
s
to
p
p
ed
at
s
ev
en
d
ielec
tr
ic
s
tack
s
d
u
e
to
th
e
s
atu
r
atio
n
in
t
h
e
ca
p
ac
itan
ce
v
alu
e,
w
h
ic
h
w
ill
b
e
d
is
cu
s
s
ed
in
s
ec
tio
n
4
.
2.
SI
M
UL
AT
I
O
N
M
E
T
H
O
D
S
Sen
ta
u
r
u
s
De
v
ice
E
d
ito
r
o
r
als
o
k
n
o
w
n
a
s
SDE
i
s
u
s
ed
as a
d
ev
ice
s
tr
u
ct
u
r
e
ed
ito
r
.
T
h
e
s
o
f
t
w
ar
e
ca
n
s
i
m
u
late
t
w
o
-
d
i
m
e
n
s
io
n
al
(
2
D
)
o
r
th
r
ee
-
d
i
m
en
s
io
n
al
(
3
D)
p
r
o
ce
s
s
e
m
u
la
to
r
to
d
esig
n
elec
t
r
o
n
ic
d
ev
ices
[
2
4
]
.
Th
e
d
ev
ice
s
i
m
u
lato
r
,
SDEV
I
C
E
is
u
s
ed
to
p
er
f
o
r
m
te
s
ts
a
n
d
elec
tr
ical
c
h
ar
ac
ter
izatio
n
.
T
h
is
w
o
r
k
ap
p
lied
d
r
if
t
-
d
i
f
f
u
s
io
n
m
o
d
el
w
i
th
d
o
p
in
g
d
ep
en
d
e
n
t
m
o
b
ilit
y
,
d
o
p
in
g
d
ep
en
d
en
t
S
h
o
ck
l
y
-
R
ea
d
-
Hall
(
SR
H)
Au
g
er
an
d
s
u
r
f
ac
e
r
ec
o
m
b
in
atio
n
f
o
r
ca
r
r
ier
tr
an
s
p
o
r
t
an
d
r
ec
o
m
b
i
n
atio
n
.
Fo
r
th
e
c
h
ar
ac
ter
izatio
n
,
th
e
a
p
p
lied
b
ias
is
s
w
ep
t
b
et
w
ee
n
0
V
to
3
0
0
V
an
d
a
co
n
s
ta
n
t
A
C
f
r
eq
u
e
n
c
y
o
f
1
MH
z
is
ap
p
lied
to
th
e
ca
p
ac
ito
r
.
3.
SI
M
UL
AT
I
O
N
O
F
T
H
E
DE
VICE
ST
R
UCTU
RE
T
h
e
MI
M
ca
p
ac
ito
r
s
tr
u
ctu
r
e
s
i
m
u
lated
i
n
th
i
s
w
o
r
k
co
n
s
is
t
s
o
f
alu
m
i
n
u
m
(
A
l)
as
t
h
e
m
e
tal
co
n
tact
an
d
t
w
o
d
i
f
f
er
e
n
t
d
ielec
tr
ic
m
ater
ials
o
n
a
p
-
t
y
p
e
s
ilico
n
.
Fo
u
r
d
if
f
er
e
n
t
MI
M
ca
p
ac
it
o
r
d
esig
n
s
ar
e
b
u
il
t
u
s
i
n
g
a
d
if
f
er
e
n
t
ar
r
an
g
e
m
en
t
o
f
d
ielec
tr
ic
s
tac
k
s
.
T
h
e
d
esi
g
n
o
f
th
e
f
o
u
r
MI
M
ca
p
ac
ito
r
s
is
s
h
o
w
n
in
Fi
g
u
r
e
1
,
w
h
ic
h
il
lu
s
tr
ates
t
w
o
,
t
h
r
ee
,
f
iv
e
a
n
d
s
e
v
en
s
tack
s
o
f
d
i
f
f
er
en
t
d
ielec
tr
ic
la
y
er
s
.
T
h
e
d
ielec
tr
ic
m
ater
ial
s
u
s
ed
in
t
h
i
s
s
t
u
d
y
w
it
h
t
h
eir
d
ielec
tr
ic
co
n
s
ta
n
ts
a
n
d
en
er
g
y
b
an
d
g
ap
s
ar
e
lis
ted
in
T
ab
le
1
.
I
n
t
h
is
w
o
r
k
,
S
iO
2
a
n
d
Si
3
N
4
l
a
y
er
s
ar
e
s
tac
k
ed
in
d
i
f
f
er
en
t
ar
r
an
g
e
m
en
t
s
a
s
s
h
o
w
n
i
n
ar
r
a
n
g
e
m
e
n
t
1
an
d
2
in
T
ab
le
2
.
T
o
co
m
p
ar
e
th
e
e
f
f
ec
t
o
f
d
i
f
f
er
e
n
t
d
ielec
tr
ic
co
n
s
ta
n
t
s
,
A
l
2
O
3
an
d
Hf
O
2
ar
e
u
s
ed
to
r
ep
lace
th
e
SiO
2
a
n
d
Si
3
N
4
la
y
er
s
a
n
d
ar
r
an
g
ed
in
t
h
e
s
a
m
e
w
a
y
s
,
as
r
ep
r
esen
ted
in
ar
r
an
g
e
m
e
n
t 3
an
d
4
in
T
ab
le
2
.
T
h
e
s
i
m
u
latio
n
is
i
n
itia
ll
y
f
o
r
m
ed
b
y
b
u
ild
in
g
a
4
0
0
n
m
th
ick
p
-
t
y
p
e
s
ilico
n
s
u
b
s
tr
ate
d
o
p
ed
w
it
h
b
o
r
o
n
at
a
co
n
ce
n
tr
atio
n
o
f
5
x
1
0
17
ato
m
s
/c
m
3
.
T
h
e
d
ielec
tr
ic
la
y
er
s
ar
e
th
e
n
d
ep
o
s
ited
o
n
th
e
s
u
b
s
tr
ate
b
ased
o
n
th
e
ar
r
an
g
e
m
e
n
t
s
h
o
w
n
i
n
T
a
b
le
2
at
1
0
0
n
m
t
h
ick
n
e
s
s
f
o
r
ea
ch
la
y
er
.
T
h
e
MI
M
c
ap
ac
ito
r
is
f
in
all
y
co
m
p
leted
b
y
d
ep
o
s
iti
n
g
3
0
n
m
m
e
tal
la
y
er
o
n
t
h
e
to
p
.
T
h
e
t
w
o
,
th
r
ee
,
f
iv
e
a
n
d
s
e
v
e
n
s
tac
k
s
o
f
d
ielec
tr
ic
m
a
ter
ial
s
ar
e
s
ig
n
i
f
ica
n
tl
y
o
b
s
er
v
ed
in
th
is
w
o
r
k
.
Ho
w
e
v
er
,
it
is
f
o
u
n
d
th
at
t
h
e
f
o
u
r
a
n
d
s
ix
d
ielec
tr
ic
s
tac
k
s
p
r
o
d
u
ce
d
d
if
f
er
en
t
s
tac
k
i
n
g
a
r
r
an
g
e
m
en
t,
w
h
er
e
th
e
in
ter
f
ac
e
b
et
w
ee
n
th
e
to
p
d
ielec
tr
ic
an
d
m
etal
p
r
o
d
u
ce
s
v
er
y
s
m
all
c
h
ar
g
e
s
w
h
ich
lead
to
lo
w
b
r
ea
k
d
o
wn
v
o
ltag
e
[
2
3
]
,
[
2
6
]
.
Hen
ce
th
is
f
o
u
r
an
d
s
ix
d
ielec
tr
ic
s
tac
k
s
ar
e
n
o
t
s
u
itab
le
f
o
r
h
ig
h
v
o
lta
g
e
ap
p
licatio
n
,
an
d
b
o
th
ar
r
an
g
e
m
en
t
s
ar
e
d
is
r
eg
a
r
d
ed
.
T
ab
le
1
.
Dielec
tr
ic
co
n
s
tan
ts
a
n
d
en
er
g
y
b
an
d
g
ap
s
o
f
th
e
d
ie
lectr
ic
m
ater
ials
D
i
e
l
e
c
t
r
i
c
ma
t
e
r
i
a
l
D
i
e
l
e
c
t
r
i
c
C
o
n
s
t
a
n
t
(
k
)
En
e
r
g
y
B
a
n
d
g
a
p
(
e
V
)
S
i
O
2
(O)
3
.
9
8
.
9
Si
3
N
4
(N)
7
.
5
5
Al
2
O
3
(
A
)
8
.
5
6
.
2
HfO
2
(H)
22
5
.
9
T
ab
le
2
.
T
h
e
ar
r
an
g
e
m
e
n
t
o
f
d
ielec
tr
ic
la
y
er
s
/
s
tac
k
s
i
n
th
e
M
I
M
ca
p
ac
ito
r
.
A
r
r
a
n
g
e
me
n
t
2
s
t
a
c
k
3
s
t
a
c
k
5
s
t
a
c
k
7
s
t
a
c
k
1
ON
ONO
ONONO
ONONONO
2
NO
NON
NONON
NONONON
3
AH
A
H
A
A
H
A
H
A
A
H
A
H
A
H
A
4
HA
H
A
H
H
A
H
A
H
H
A
H
A
H
A
H
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
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8708
I
J
E
C
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Vo
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No
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3
,
J
u
n
e
2
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1
7
:
1
5
5
4
–
1
5
6
1
1556
(
a)
(
b
)
(
c
)
(
d
)
Fig
u
r
e
1
.
MI
M
ca
p
ac
ito
r
s
w
it
h
(
a)
t
w
o
,
(
b
)
th
r
ee
,
(
c)
f
iv
e
an
d
(
d
)
s
ev
en
la
y
er
s
o
f
d
ielec
tr
ic
m
ater
ials
4.
DE
VI
CE
CH
AR
ACT
E
R
I
Z
AT
I
O
N
AN
D
P
E
RF
O
RM
ANCE
4
.
1
.
Ca
pa
cit
a
nce
-
Vo
lt
a
g
e
(
C
-
V
)
Cha
ra
ct
er
is
t
ics
C
ap
ac
itan
ce
-
Vo
lta
g
e
(
C
-
V
)
m
ea
s
u
r
e
m
e
n
t
i
s
p
er
f
o
r
m
ed
to
an
al
y
ze
t
h
e
i
m
p
a
ct
o
f
v
o
ltag
e
o
n
ca
p
ac
itan
ce
.
Fi
g
u
r
e
2
(
a)
s
h
o
w
s
t
h
e
C
-
V
m
ea
s
u
r
e
m
e
n
t
f
o
r
all
f
o
u
r
(
t
w
o
,
t
h
r
ee
,
f
i
v
e
a
n
d
s
ev
e
n
d
ielec
tr
ic
s
tack
s
)
s
i
m
u
lated
MI
M
ca
p
ac
i
to
r
s
.
I
t
is
i
n
d
icate
d
t
h
at
th
e
M
I
M
ca
p
ac
ito
r
w
it
h
a
co
m
b
i
n
ati
o
n
o
f
AH
o
b
tain
ed
th
e
h
ig
h
e
s
t
ca
p
ac
itan
ce
v
al
u
e
o
f
0
.
1
3
7
7
n
F,
w
h
ich
is
g
r
ea
te
r
th
an
o
t
h
er
ca
p
ac
itan
ce
o
b
tai
n
ed
f
r
o
m
H
A
,
ON,
an
d
NO
at
0
.
0
8
9
n
F,
0
.
0
3
2
n
F,
an
d
0
.
0
2
6
n
F,
r
esp
ec
tiv
el
y
.
(
a)
(
b
)
(
c)
(
d
)
Fig
u
r
e
2
.
C
-
V
m
ea
s
u
r
e
m
e
n
t
f
o
r
(
a)
tw
o
,
(
b
)
th
r
ee
,
(
c)
f
iv
e
an
d
(
d
)
s
ev
en
s
tack
ed
o
f
MI
M
ca
p
ac
ito
r
s
.
-6
-4
-2
0
2
4
6
0
.0
0
0
.0
2
0
.0
4
0
.0
6
0
.0
8
0
.1
0
0
.1
2
0
.1
4
C
a
p
a
ci
t
a
n
ce
(n
F
)
Vol
t
a
g
e
(V)
NO
ON
HA
AH
-6
-4
-2
0
2
4
6
0
.1
0
0
.1
5
0
.2
0
0
.2
5
0
.3
0
C
a
p
a
ci
t
a
n
ce
(n
F
)
Vol
t
a
g
e
(V)
N
O
N
O
N
O
H
AH
AH
A
-6
-4
-2
0
2
4
6
0
.1
5
0
.2
0
0
.2
5
0
.3
0
0
.3
5
0
.4
0
C
a
p
a
ci
t
a
n
ce
(n
F
)
Vol
t
a
g
e
(V)
N
O
N
O
N
O
N
O
N
O
H
AH
AH
AH
AH
A
-6
-4
-2
0
2
4
6
0
.1
5
0
.2
0
0
.2
5
0
.3
0
0
.3
5
0
.4
0
C
a
p
a
ci
t
a
n
ce
(n
F
)
Vol
t
a
g
e
(V)
N
O
N
O
N
O
N
O
N
O
N
O
N
O
H
AH
AH
AH
AH
AH
AH
A
A
l
u
m
i
n
u
m
SiO
2
Si
3
N
4
Sil
ico
n
Evaluation Warning : The document was created with Spire.PDF for Python.
I
J
E
C
E
I
SS
N:
2
0
8
8
-
8708
Th
e
E
ffect
o
f D
iffer
en
t D
ielec
t
r
ic
Ma
teri
a
ls
in
De
s
ig
n
in
g
Hig
h
P
erfo
r
ma
n
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Me
ta
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....
(
M.
A
.
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lkifeli)
1557
I
t
is
s
u
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ted
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at
th
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if
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al
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e
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if
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ic
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n
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a
s
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ig
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ielec
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ic
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n
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it
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r
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u
c
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i
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er
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itan
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m
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ar
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g
e
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en
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Ho
w
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h
e
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p
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itan
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alu
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i
g
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er
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o
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m
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h
is
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s
ed
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y
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e
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i
g
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er
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n
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u
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ter
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et
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n
m
etal
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ic
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A
l
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Al
2
O
3
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w
it
h
h
i
g
h
d
ielec
tr
ic
c
o
n
s
ta
n
t [
2
3
]
.
Fig
u
r
e
2
(
b
)
s
h
o
w
s
t
h
e
C
-
V
m
ea
s
u
r
e
m
e
n
t
o
f
t
h
r
ee
d
ielec
t
r
ic
la
y
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s
w
h
er
e
t
h
e
h
i
g
h
e
s
t
ca
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o
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ed
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r
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m
t
h
e
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ar
r
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n
g
e
m
e
n
t
i
s
0
.
3
1
2
n
F.
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h
e
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o
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tain
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4
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1
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r
ONO
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d
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1
5
8
n
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r
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atio
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e,
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s
ed
b
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th
e
lo
wer
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ic
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n
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tan
ts
.
T
h
is
r
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lt
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s
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ag
r
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e
n
t
w
it
h
th
e
r
e
s
u
l
ts
o
b
tai
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ed
f
r
o
m
Fig
u
r
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2
(
a)
.
T
h
e
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lt
also
s
h
o
w
s
t
h
at
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e
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A
ar
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en
t
p
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ce
s
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er
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co
m
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H.
A
s
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e
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lier
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s
o
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r
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d
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e
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a
n
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m
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o
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a
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o
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ce
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at
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e
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ic
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ter
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ac
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w
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e
A
l
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A
H
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ter
ac
tio
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ce
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ig
h
er
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m
o
u
n
t
o
f
ch
ar
g
es
co
m
p
ar
ed
to
A
l
-
H
AH
[
2
3
]
.
Fig
u
r
e
2
(
c)
s
h
o
w
s
t
h
e
ca
p
ac
itan
ce
f
o
r
f
iv
e
d
ielec
tr
ic
la
y
er
s
w
h
ic
h
d
e
m
o
n
s
tr
ate
s
th
at
th
e
A
H
AH
A
ar
r
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g
e
m
en
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ce
s
t
h
e
h
ig
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est
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ita
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ce
.
B
ased
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th
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e
n
d
ielec
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ic
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er
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s
h
o
wn
in
Fig
u
r
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2
(
d
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,
th
e
h
ig
h
e
s
t
ca
p
ac
itan
ce
is
o
b
tain
ed
f
r
o
m
t
h
e
A
H
A
H
AH
A
ar
r
an
g
e
m
e
n
t.
T
h
er
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o
r
e
th
e
in
te
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tio
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o
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o
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ce
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at
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ter
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h
r
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d
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ic
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s
in
MI
M
ca
p
ac
ito
r
.
Fig
u
r
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3
s
u
m
m
ar
izes
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e
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a
citan
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v
alu
e
s
o
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f
r
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Fig
u
r
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2
.
As
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r
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h
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r
d
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f
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er
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n
t
d
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ar
r
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as
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n
d
AH
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h
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ce
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ec
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e
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h
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m
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ter
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n
s
i
s
t
o
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ta
n
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a
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n
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ch
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h
e
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AH
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e
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ated
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ce
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e
to
th
e
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ig
h
n
u
m
b
er
o
f
d
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tr
ic
la
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er
s
w
h
ich
g
i
v
e
r
is
e
to
h
i
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h
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e
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tr
a
p
p
ed
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etw
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n
th
e
i
n
ter
f
ac
e
s
o
f
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ic
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s
.
Ho
w
e
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it
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o
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n
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th
at
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e
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e
r
s
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s
ed
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o
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g
n
i
f
ica
n
t
in
cr
e
m
e
n
t
i
n
th
e
ca
p
ac
ita
n
ce
an
d
th
e
v
al
u
es
ar
e
s
atu
r
ated
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T
h
e
Al
2
O
3
(
A
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th
at
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p
lace
d
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n
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o
t
o
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l
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s
e
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e
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m
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ch
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t a
l
s
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s
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e
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ilit
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ig
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o
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e
r
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t
h
a
n
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f
O
2
[
2
5
]
.
F
ig
u
r
e
3
.
C
ap
ac
itan
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f
o
r
t
w
o
,
th
r
ee
,
f
i
v
e
an
d
s
e
v
en
d
ielec
tr
i
c
s
tack
s
4
.
2
.
C
urre
nt
-
Vo
lt
a
g
e
(
I
-
V)
Cha
r
a
ct
er
is
t
ics
Fig
u
r
e
4
(
a)
s
h
o
w
s
t
h
e
I
-
V
ch
a
r
ac
ter
is
tics
f
o
r
MI
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p
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ito
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s
w
it
h
t
w
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s
.
I
t i
s
i
n
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icat
ed
th
at
t
h
e
A
H
ar
r
an
g
e
m
e
n
t
o
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tain
ed
t
h
e
h
i
g
h
est
b
r
ea
k
d
o
w
n
v
o
ltag
e
o
f
9
8
V,
w
h
ic
h
i
s
g
r
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ter
th
a
n
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er
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r
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o
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n
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e
s
o
b
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ed
f
r
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m
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A
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8
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7
6
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8
V
r
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tiv
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y
.
T
h
is
m
a
y
b
e
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u
g
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ested
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y
th
e
d
if
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e
n
ce
i
n
th
e
d
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tr
ic
co
n
s
ta
n
t
s
a
n
d
en
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y
b
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d
g
ap
s
[
1
3
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-
[
1
4
]
.
A
s
d
is
c
u
s
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ed
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r
ev
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o
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s
l
y
,
s
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n
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it
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s
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n
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n
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w
it
h
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to
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m
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l
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h
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ic
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n
s
tan
t
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n
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en
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y
b
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d
g
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an
Hf
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2
,
w
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h
ca
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s
e
th
e
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i
g
h
b
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k
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e.
T
h
e
A
H
ar
r
an
g
e
m
en
t
also
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u
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th
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i
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ess
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p
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to
HA
,
ON
a
n
d
NO
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r
an
g
e
m
e
n
t
s
[
2
5
].
Fig
u
r
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4
(
b
)
s
h
o
w
s
th
e
I
-
V
c
h
ar
ac
ter
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tic
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o
f
th
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at
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W
ith
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r
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ested
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h
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ater
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5
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[1
]
M
.
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ra
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,
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t
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ter
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[2
]
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v
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Do
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t
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“
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[3
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H.
Jo
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F
.
Ay
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z
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“
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h
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in
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[5
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K.
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ll
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s,
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t
a
l.
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lec
tri
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re
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teria
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m
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su
lato
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m
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tal
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]
J.
A
.
Ba
b
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k
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t
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l.
,
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tri
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]
G
.
L
i,
e
t
a
l.
,
“
In
v
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stig
a
ti
o
n
o
f
Ch
a
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jec
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a
n
d
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lax
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ti
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M
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r
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w
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p
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,
”
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:
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1
3
.
[8
]
J.
H.
Klo
o
tw
ij
k
,
e
t
a
l.
,
“
Ultrah
ig
h
Ca
p
a
c
it
a
n
c
e
De
n
sity
f
o
r
M
u
lt
i
p
le
A
LD
-
G
ro
w
n
M
IM
Ca
p
a
c
it
o
r
S
tac
k
s
in
3
-
D
S
il
ico
n
,
”
IEE
E
El
e
c
tro
n
De
v
ice
L
e
tt
.
,
v
o
l
/i
ss
u
e
:
29
(
7
)
,
p
p
.
7
4
0
-
7
4
2
,
2
0
0
8
.
[9
]
M
.
M
.
Ka
m
m
e
r
e
r,
e
t
a
l.
,
“
Ch
a
ra
c
teriz
a
ti
o
n
a
n
d
M
o
d
e
li
n
g
o
f
A
to
m
ic
L
a
y
e
r
De
p
o
sited
Hig
h
-
De
n
si
ty
T
r
e
n
c
h
Ca
p
a
c
it
o
rs i
n
S
il
ico
n
,
”
IEE
E
T
ra
n
sa
c
ti
o
n
s o
n
S
e
mic
o
n
d
u
c
to
r M
a
n
u
fa
c
t
u
rin
g
,
v
o
l
/i
ss
u
e
:
25
(
2
)
,
p
p
.
2
4
7
-
2
5
4
,
2
0
1
2
.
[1
0
]
R.
Ka
rth
ik
,
et
a
l.
, “
Hig
h
-
P
e
rf
o
rm
a
n
c
e
M
u
lt
i
-
L
a
y
e
r
M
e
tal
-
In
su
lato
r
-
M
e
tal
Ca
p
a
c
it
o
rs
f
o
r
f
u
tu
re
In
teg
ra
ted
Circu
it
s
,
”
IEE
E
In
ter
n
a
ti
o
n
a
l
C
o
n
fer
e
n
c
e
o
n
Na
n
o
tec
h
n
o
l
o
g
y
,
p
p
.
4
6
0
-
4
6
3
,
2
0
1
5
.
[1
1
]
D.
Ka
n
n
a
d
a
ss
a
n
,
e
t
a
l.
,
“
M
o
d
e
li
n
g
th
e
V
o
lt
a
g
e
No
n
li
n
e
a
rit
y
o
f
Hi
g
h
-
K
M
IM
Ca
p
a
c
it
o
rs
,
”
S
o
li
d
-
S
t
a
te
El
e
c
tro
n
ics
,
v
o
l.
9
1
,
p
p
.
1
1
2
-
1
1
7
,
2
0
1
4
.
[1
2
]
F.
M
o
n
d
o
m
a
n
d
S
.
Blo
n
k
o
w
sk
i
,
“
El
e
c
tri
c
a
l
Ch
a
ra
c
teriz
a
ti
o
n
a
n
d
Re
li
a
b
il
it
y
o
f
H
fO2
a
n
d
A
l2
O3
-
Hf
O2
M
IM
Ca
p
a
c
it
o
rs
,
”
M
icr
o
e
lec
tro
n
ics
Relia
b
il
it
y
,
v
o
l
/i
ss
u
e
:
43
(
8
)
,
p
p
.
1
2
5
9
-
1
2
6
6
,
2
0
0
3
.
[1
3
]
H.
Y.
K
w
a
k
,
e
t
a
l.
,
“
Ch
a
ra
c
teri
z
a
ti
o
n
o
f
A
l2
O3
-
Hf
O2
-
A
l2
O3
S
a
n
d
w
ich
e
d
M
IM
Ca
p
a
c
it
o
r
u
n
d
e
r
DC
a
n
d
A
C
S
tres
se
s
,
”
S
tu
d
e
n
t
P
a
p
e
r,
2
0
1
1
.
[1
4
]
L
.
Ka
n
k
a
t
e
a
n
d
H.
Klie
m
,
“
No
n
li
n
e
a
r
Re
lax
a
ti
o
n
a
l
P
o
lariz
a
ti
o
n
o
f
A
l2
O3
a
n
d
Hf
O2
,
”
Co
n
fer
e
n
c
e
o
n
El
e
c
trica
l
In
su
la
ti
o
n
a
n
d
Die
lec
tric P
h
e
n
o
me
n
a
,
2
0
1
5
.
[1
5
]
H.
Hu
,
e
t
a
l.
,
“
A
Hig
h
-
P
e
rf
o
rm
a
n
c
e
M
IM
Ca
p
a
c
it
o
r
u
sin
g
Hf
O2
Die
lec
tri
c
s
,
”
IEE
E
El
e
c
tro
n
De
v
ice
L
e
tt
r.
,
v
o
l
/i
ss
u
e
:
23
(
9
)
,
2
0
0
2
.
[1
6
]
S
.
J.
Din
g
,
e
t
a
l.
,
“
Ev
id
e
n
c
e
a
n
d
Un
d
e
rsta
n
d
i
n
g
o
f
AL
D
H
f
O2
-
Al2
O3
L
a
m
in
a
te
M
IM
Ca
p
a
c
it
o
rs
Ou
tp
e
rf
o
rm
in
g
S
a
n
d
w
ich
Co
u
n
terp
a
rts
,
”
IE
EE
El
e
c
tro
n
De
v
ice
L
e
tt
.
,
v
o
l
/i
ss
u
e
:
25
(
10
)
,
2
0
0
4
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8708
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J
E
C
E
Vo
l.
7
,
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.
3
,
J
u
n
e
2
0
1
7
:
1
5
5
4
–
1
5
6
1
1560
[1
7
]
S
.
J.
Din
g
,
e
t
a
l.
,
“
RF
,
DC
a
n
d
Re
li
a
b
il
it
y
Ch
a
ra
c
teristics
o
f
ALD
HfO
2
-
A
l2
O3
L
a
m
in
a
te
M
IM
Ca
p
a
c
it
o
rs
f
o
r
S
i
RF
IC
A
p
p
li
c
a
ti
o
n
s
,
”
IEE
E
T
ra
n
sa
c
ti
o
n
s o
n
El
e
c
tro
n
De
v
ice
s
,
v
o
l
/i
ss
u
e
:
51
(
6
)
,
2
0
0
4
.
[1
8
]
S
.
J.
Din
g
,
e
t
a
l.
,
“
A
to
m
i
c
-
la
y
e
r
-
d
e
p
o
site
d
A
l2
O3
-
Hf
O2
-
A
l2
O3
Die
lec
tri
c
s
f
o
r
M
e
tal
-
In
su
lato
r
-
Me
tal
Ca
p
a
c
it
o
r
A
p
p
li
c
a
ti
o
n
s
,
”
A
p
p
li
e
d
P
h
y
sic
s L
e
tt
s
,
v
o
l.
8
7
,
2
0
0
5
.
[1
9
]
D.
Bh
a
rti
a
n
d
S
.
P
.
T
iw
a
ri,
“
I
m
p
ro
v
e
d
P
r
o
p
e
rti
e
s
o
f
M
IM
Ca
p
a
c
it
o
rs
u
sin
g
A
L
D
A
l2
O3
b
y
M
u
l
ti
-
T
e
m
p
e
ra
tu
re
T
e
c
h
n
iq
u
e
,
”
IEE
E
In
ter
n
a
ti
o
n
a
l
Co
n
fer
e
n
c
e
o
n
Na
n
o
tec
h
n
o
l
o
g
y
,
p
p
.
1
0
1
5
-
1
0
1
8
,
2
0
1
5
.
[2
0
]
S
.
A
.
B.
Na
sr
a
ll
a
h
,
e
t
a
l.
,
“
G
a
te
Lea
k
a
g
e
P
ro
p
e
rti
e
s
in
(A
l2
O3
/
Hf
O2
/
A
l
2
O3
)
Die
lec
tri
c
o
f
M
O
S
De
v
ic
e
s
,
”
T
h
in
S
o
li
d
Fi
lms
,
v
o
l.
5
1
7
,
p
p
.
4
5
6
-
4
5
8
,
2
0
0
8
.
[2
1
]
S
.
K.
L
e
e
,
e
t
a
l.
,
“
Ch
a
ra
c
teriz
in
g
V
o
lt
a
g
e
L
in
e
a
rit
y
a
n
d
L
e
a
k
a
g
e
Cu
rre
n
t
o
f
Hig
h
-
De
n
sity
A
l2
O
3
/Hf
O2
/A
l2
O3
M
IM
Ca
p
a
c
it
o
rs
,
”
I
EE
E
E
lec
tro
n
De
v
ice
L
e
tt
r
.
,
v
o
l
/i
ss
u
e
:
32
(
3
)
,
2
0
1
1
.
[2
2
]
D.
W
u
,
e
t
a
l.
,
“
S
tru
c
t
u
ra
l
a
n
d
E
lec
tri
c
a
l
Ch
a
ra
c
teriz
a
ti
o
n
o
f
A
l2
O3
/Hf
O2
/A
l2
O3
in
stra
in
e
d
S
iG
e
,
”
S
o
li
d
-
S
t
a
te
El
e
c
tro
n
ics
,
v
o
l.
4
9
,
p
p
.
1
9
3
-
1
9
7
,
2
0
0
5
.
[2
3
]
I.
S
.
P
a
rk
,
e
t
a
l.
,
“
Die
lec
tri
c
S
t
a
c
k
in
g
E
ff
e
c
t
o
f
A
l2
O3
a
n
d
Hf
O2
in
M
e
tal
-
In
su
lat
o
r
-
M
e
tal
Ca
p
a
c
it
o
r
,
”
IEE
E
El
e
c
tro
n
De
v
ice
L
e
tt
e
rs
.
,
v
o
l
/i
ss
u
e
:
34
(
1
)
,
p
p
.
1
2
0
-
1
2
2
,
2
0
1
3
.
[2
4
]
S
y
n
o
p
sy
s
,
“
T
C
AD
Ov
e
r
v
ie
w
,”
2014
.
h
tt
p
:/
/w
ww
.
s
y
n
o
p
s
y
s.co
m
/p
ro
d
u
c
ts/t
c
a
d
_
o
v
e
rv
ie
w
.
p
d
f
[2
5
]
D.
S
c
h
ro
d
e
r,
“
El
e
c
tri
c
a
l
Ch
a
ra
c
teriz
a
ti
o
n
o
f
De
f
e
c
ts
in
G
a
t
e
Die
lec
tri
c
s
,
”
2
0
0
3
.
[2
6
]
G
.
W
il
k
,
e
t
a
l
.
,
“
Hig
h
-
k
g
a
te
Die
l
e
c
tri
c
s:
Cu
rre
n
t
S
tat
u
s
a
n
d
M
a
ter
ial
s
P
r
o
p
e
rti
e
s
C
o
n
si
d
e
ra
ti
o
n
s,
”
A
p
p
li
e
d
P
h
y
sic
s
J
o
u
rn
a
l
,
2
0
0
1
.
B
I
O
G
RAP
H
I
E
S
O
F
AUTH
O
RS
M
u
h
a
m
m
a
d
Afif
Z
u
l
k
ifeli
re
c
e
iv
e
d
th
e
B.
En
g
d
e
g
r
e
e
in
E
lec
tro
n
ic
En
g
in
e
e
rin
g
f
ro
m
Un
iv
e
rsiti
M
a
la
y
sia
P
e
rli
s
(Un
iM
A
P
),
M
a
lay
si
a
,
in
2
0
1
5
.
He
is
c
u
rre
n
tl
y
d
o
in
g
h
is
M
.
S
c
in
El
e
c
tro
n
ic
E
n
g
in
e
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rin
g
(Re
se
a
rc
h
)
a
t
Un
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A
P
si
n
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e
2
0
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5
.
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rc
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th
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ig
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v
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p
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it
h
f
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s o
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E
M
S
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p
p
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ti
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n
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No
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re
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p
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P
h
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sic
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ro
m
Un
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e
rsiti
Ke
b
a
n
g
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a
n
M
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(UK
M
),
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,
in
2
0
0
1
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h
e
M
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S
c
.
d
e
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re
e
in
S
o
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S
tate
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h
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icro
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f
ro
m
Un
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M
a
la
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(US
M
),
in
2
0
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4
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h
e
P
h
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d
e
g
re
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h
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)
f
ro
m
Un
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o
f
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g
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m
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Un
it
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Kin
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in
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2
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a
r
2
0
0
5
,
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e
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o
in
e
d
Un
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e
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M
a
lay
sia
P
e
rli
s
(Un
iM
A
P
),
M
a
la
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sia
,
w
h
e
re
sh
e
is
n
o
w
a
se
n
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r
lec
tu
re
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in
t
h
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S
c
h
o
o
l
o
f
M
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lec
tro
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E
n
g
in
e
e
rin
g
.
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r
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se
a
rc
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tere
sts
a
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in
th
e
a
re
a
s
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f
se
m
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n
d
u
c
to
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p
h
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sic
s,
sim
u
latio
n
a
n
d
f
a
b
rica
ti
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f
m
icro
-
a
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d
n
a
n
o
e
lec
tro
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ic
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e
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s,
e
x
p
e
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m
e
n
t
a
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sim
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latio
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ra
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d
Ra
m
a
n
sc
a
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g
(G
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).
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a
T
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k
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B.
En
g
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