Inter
national
J
our
nal
of
Electrical
and
Computer
Engineering
(IJECE)
V
ol.
9,
No.
2,
April
2019,
pp.
1453
1460
ISSN:
2088-8708,
DOI:
10.11591/ijece.v9i2.pp1453-1460
1453
Impact
of
gamma-ray
irradiation
on
dynamic
characteristics
of
Si
and
SiC
po
wer
MOSFETs
Saranya
Krishnamurth
y
1
,
Ramani
Kannan
2
,
Chay
Che
Kiong
3
,
T
aib
B
Ibrahim
4
,
and
Y
usof
Abdullah
5
1,2,3,4
Department
of
Electrical
and
Electronic
Engineering,
Uni
v
ersiti
T
eknologi
PETR
ON
AS,
Malaysia
5
Material
T
echnology
Group,
Malaysian
Nuclear
Agenc
y
,
Malaysia
Article
Inf
o
Article
history:
Recei
v
ed
Jun
28,
2018
Re
vised
Des
18,
2018
Accepted
Des
29,
2018
K
eyw
ords:
Po
wer
MOSFET
T
otal
ionizing
dose
ef
fects
Radiation
response
Electrical
characterization
Gamma
ray
ABSTRA
CT
Po
wer
electronic
de
vices
in
spacecraft
and
milit
ary
applications
requires
high
radiation
tolerant.
The
semiconductor
de
vices
f
ace
the
issue
of
de
vice
de
gradation
due
to
their
sensiti
vity
to
radiation.
Po
wer
MOSFET
is
one
of
the
primary
components
of
these
po
wer
electronic
de
vices
because
of
its
capabilities
of
f
ast
switching
speed
and
lo
w
po
wer
consumption.
These
abili
ties
are
challenged
by
ionizing
radiation
which
damages
the
de
vices
by
inducing
char
ge
b
uilt-up
in
the
s
ensiti
v
e
oxide
layer
of
po
wer
MOSFET
.
Radiations
de
grade
the
oxides
in
a
po
wer
MOSFET
through
T
otal
Ionization
Dose
ef
fect
mechanism
that
creates
defects
by
generation
of
e
xcessi
v
e
electron–hole
pairs
causing
electrical
characteristics
shifts.
This
study
in
v
estig
ates
the
impa
ct
of
g
amma
ray
irra-
diation
on
dyna
mic
characteristics
of
silicon
and
silicon
carbide
po
wer
MOSFET
.
The
switching
speed
is
limit
at
the
higher
doses
due
to
the
increase
capacitance
in
po
wer
MOSFETs.
Thus,
the
po
wer
circuit
may
operate
improper
due
to
the
switching
speed
has
changed
by
incre
asing
or
decreasing
capacitances
in
po
wer
MOSFETs.
These
de-
fects
are
obtained
due
to
the
penetration
of
Cobalt60
g
amma
ray
dose
le
v
el
from
50krad
to
600krad.
The
irradiated
de
vices
were
e
v
aluated
through
its
shifts
in
the
capacitance-
v
oltage
characteristics,
results
were
analyzed
and
plotted
for
the
both
silic
on
and
silicon
carbide
po
wer
MOSFET
.
Copyright
c
2019
Institute
of
Advanced
Engineering
and
Science
.
All
rights
r
eserved.
Corresponding
A
uthor:
Ramani
Kannan,
Department
of
Electrical
and
Electronic
Engineering,
Uni
v
ersiti
T
eknologi
PETR
ON
AS,
32610
Seri
Iskandar
,
Perak,
Malaysia.
Email:
ramani.kannan@utp.edu.my
1.
INTR
ODUCTION
Po
wer
Metal-Oxide
Semiconductor
Field-Ef
fect
T
ransistors
(MOSFETs)
play
a
significant
role
in
space,
po
wer
plant,
military
and
harsh
en
vironment
applications
[1],
[2].
Semiconductor
de
vices
present
in
radiation
harsh
en
vironme
n
t
w
ould
be
e
xposed
to
dif
ferent
types
of
radiations
which
lead
to
malfunctions
of
the
de
vices
[3].
The
space
radiation
en
vironment
is
mainly
classified
int
o
particle
and
proton
radiation.
The
radiation
ef
fects
of
po
wer
MOSFETs
mainly
includes
ionizing
radiation
and
single
e
v
ent
ef
fects
[4],
[5].
Po
wer
MOSFET
e
xposed
to
ionizing
radiation
cause
an
accumulation
of
char
ges
in
interf
ace
and
g
ate
oxide
layer
,
thereby
de
grading
the
performance
of
de
vices.
Assessing
the
radiation
hardness
of
a
de
vice
with
one
radiation
on
the
ground
and
anticipating
its
reaction
to
a
di
v
erse
radi
ation
in
space
could
be
a
intricate
task.
In
this
w
ay
,
it
is
e
xceptionally
fundamental
to
assess
the
radiation
hardness
of
a
de
vice
to
di
v
erse
radiations
from
the
application
perspecti
v
e.
Se
v
eral
studies
ha
v
e
sho
wn
the
changes
in
stat
ic
electrical
characteristics
of
commercially
a
v
ailable
silicon
(Si)
and
silicon
carbide
(SiC)
po
wer
MOSFET
under
radiation
[6],
[7].
The
results
sho
w
that
the
ionizing
total
dose
damage
of
po
wer
MOSFETs
mainly
appears
as
changes
in
I-V
characteristics,
especially
the
decrease
of
threshold
v
oltage
and
the
incr
ease
of
current
dri
v
e
[8].
Neutron
irradiation
can
cause
functional
f
ailure
of
the
J
ournal
Homepage:
http://iaescor
e
.com/journals/inde
x.php/IJECE
Evaluation Warning : The document was created with Spire.PDF for Python.
1454
ISSN:
2088-8708
commercial
grade
SiC
po
wer
MOSFETs
de
vices,
mainly
due
to
the
ionizing
ef
fect
caused
by
the
recoil
nucleus
the
obtained
from
collision
of
the
neutron
and
the
lattice
atoms
so
to
mak
e
the
de
vices
f
ail
[9].
The
results
of
hea
vy
ion
and
proton
radiation
test
report
that
the
permanent
damage
caused
by
ion
irradiation
at
high
LET
v
alues
will
lead
to
increase
in
the
g
ate
and
source
leakage
of
the
de
vice.
The
study
[10],
[11]
demonstrated
that
the
safe
w
orking
v
oltage
of
the
de
vice
w
as
significantly
reduced
and
the
current
w
as
attenuated
after
the
hea
vy
ion
irradiation
test
on
SiC
po
wer
MOSFETs
of
1200
V
.
The
decrease
of
safe
w
orking
v
oltage
will
directly
af
fect
the
de
vice’
s
reliability
inde
x
as
well
as
the
de
vice’
s
space
applications.
Akturk
et
al.
detailed
that
SiC
MOSFETs
irradiated
with
g
amma-rays
under
g
ate
v
oltage
biasing
condition
sho
wed
the
ne
g
ati
v
e
v
oltage
shift
in
threshold
v
olt
age
(Vth),though
in
their
e
xaminations
the
aggre
g
ate
measurement
of
g
amma-ray
dose
le
v
el
w
as
limited
to
kGy
[12].
The
in
v
estig
ation
of
threshold
v
oltage
shift
and
drain
current
de
gradation
w
as
conducted
for
both
N-channel
and
P-channel
Si
MOSFET
subjected
to
electron
beam
radiation
and
g
amma
ray
irradiation
[13],
[14].
Ho
we
v
er
,
it
is
necessary
to
consider
the
dynamic
electrical
characteristics
on
po
wer
MOSFETs
during
the
total
ionizing
radiation.
Therefore,
this
w
ork
aims
to
in
v
estig
ate
the
capacitance
v
oltage
shifts
of
commercial
Si
(T
OSHIB
A
2SK2662)
and
SiC
(R
OHM
SCT2H12NZ
and
SCT3160KL)
po
wer
MOSFETs
subjected
to
radiation
by
analysing
its
C-V
characteristics
before
and
after
cobalt-60
g
amma
ray
radiation.
In
this
study
,
the
relation
between
v
ariable
drain
v
oltage
and
g
amma-ray
irradiation
response
of
Si
and
SiC
po
wer
MOSFETs
w
as
in
v
estig
ated
by
applying
a
constant
or
v
ariable
bias
to
g
ate
te
rminal.The
e
xperiments
indicate
that
Si
and
SiC
MOSFETs
operate
within
specification
up
to
100
krad,
and
may
reliably
operate
after
recei
ving
doses
up
to
300
krad,
pro
vided
that
a
g
ate
bias
of
0V
,
which
is
specified
as
the
lo
west
recommended
g
ate
bias
in
the
datasheet,
is
used
to
turn
of
f
the
po
wer
MOSFET
.
In
addition
it
clears
that
SiC
po
wer
MOSFET
capacitance
v
alue
changes
is
less
compared
to
sil
icon
po
wer
MOSFET
.
Furthermore,
e
xperiments
indicate
t
hat
the
switching
applications
such
as
b
uck
and
boost
con
v
erters
will
be
more
af
fected
due
to
increases
and
decreases
in
interf
ace
state
densi
ties
and
de
vice
capacitances
such
as
output
(
C
oss
),
input
(
C
iss
)
and
re
v
erse
transfer
(
C
r
ss
)
capacitances,
than
changes
in
threshold
v
oltage
and
de
vice
current
dri
v
e.
The
remaining
part
of
the
article
is
structured
as
follo
ws,
Section
2.
presents
the
theoretical
concepts
of
radiation
ef
fects
on
po
wer
MOSFET
.
Section
3.
details
the
e
xperimental
test
set-up
for
the
in
v
estig
ation
of
dy-
namic
characteristics
due
to
g
amma
ray
irradiation,
Section
4.
disc
uss
about
the
results
and
comparati
v
e
analysis,
Section
5.
pro
vides
Conclusion.
2.
RADIA
TION
EFFECTS
ON
PO
WER
MOSFET
Po
wer
MOSFET
is
a
three
terminal
de
vice
Gate
(G),
Source
(S)
and
Drain
(D),
which
used
in
DC-DC
con
v
erter
,
po
wer
amplifier
and
switching
electronic
signals.
In
addition,
Po
wer
MOSFET
is
a
superior
switching
speed
with
v
ery
lo
w
current
required
to
turn
on
g
ate
dri
v
e,
due
t
o
the
rate
of
char
ge
remo
v
ed
or
supplied
from
capacitance.
In
high
v
oltage
po
wer
MOSFET
,
only
electrons
are
flo
wing
during
forw
ard
conduction.
This
is
the
reason
t
hat
it
ca
n
switching
f
ast
at
high
switching
frequenc
y
with
lo
w
switching
l
oss.
Man
y
studies
ha
v
e
been
carried
out
to
in
v
estig
ate
the
radiation
ef
fects
on
silicon
based
po
wer
MOSFET
.
SiC
repla
ces
a
silicon
material
due
to
their
realistic
adv
antages
such
as
wide
band
g
ap,
high
critical
field
and
high
thermal
conducti
vity
.
4H-polytype
SiC
material
is
most
promising
semiconductor
for
po
wer
MOSFETs
compared
to
other
polytypes
6H-SiC
and
3H-SiC.
The
SiC
po
wer
MOSFETs
reduces
the
specific
on-resistance,
which
are
more
suitable
for
high
v
oltage,
high
temperature
and
harsh
radiation
en
vironment.
The
design
process
used
for
SiC
po
wer
MOSFETs
as
similar
as
silicon
po
wer
MOSFETs
[15].
Radiation
is
a
transmission
and
emission
of
ener
gy
that
tra
v
el
in
a
form
of
particles
or
w
a
v
es
through
space
or
material.
The
radia
tion
is
cate
gorized
as
ionizing
and
non-ionizing
radiation
based
on
the
type
of
particle.
The
ionizing
radiation
induced
the
ionization
mechanism
in
the
de
vice
which
tends
to
de
vice
de
gradation
and
performance
f
ailure
by
changing
the
electrical
characteristics.
During
the
radiation
e
xposure,
the
highly
char
ged
particle
such
as
electrons,
protons
and
g
amma
rays
passing
through
the
oxide
layer
that
ionize
atom
to
creates
the
electron-hole
pairs
in
the
po
wer
MOSFET
.
The
generated
electrons
are
much
more
mobile
than
the
holes
and
the
y
will
mo
v
e
out
of
the
oxide
in
a
v
ery
f
ast
times.
Ho
we
v
er
,
some
electrons
and
holes
that
escape
initial
recombination
and
the
y
are
immobile
and
remain
behind
in
oxide.
T
rapped
char
ge
at
the
SiO2/
Si
interf
ace
induces
an
in
v
ersion
layer
during
the
of
f-state
that
is
responsible
for
increasing
leakage
current
and
threshold
v
oltage
shifts.
The
ionizing
radiation
of
the
space
en
vironment
mainly
causes
T
otal
Ionizing
Dose
(TID)
[16].
The
cumulati
v
e
ef
fect
of
ionizing
radiation
is
referred
as
TID.
Dose
is
defined
as
the
quantitati
v
e
mea-
sure
of
accumulated
ener
gy
absorbed
from
ionizing
radiation
per
unit
mass
as
gi
v
en
in
equations
(1).
IJECE
V
ol.
9,
No.
2,
April
2019
:
1453
–
1460
Evaluation Warning : The document was created with Spire.PDF for Python.
IJECE
ISSN:
2088-8708
1455
d
=
1
dE
dx
(1)
where,
d
is
the
dose,
is
the
flux
of
incident
particles.
The
SI
unit
for
radiation
dose
is
the
radiation
absorbed
dose
(rad)
or
Gray
[Gy]
i.e.1
Gy
=
100
rad.
The
units
are
material-specific,
it
consists
of
accumulation
of
char
ges
o
v
er
time
in
dif
ferent
materials
such
as
silicon
or
silicon
carbide.
The
SiC
po
wer
is
the
leading
high
v
oltage
technology
in
current
mark
et
and
there
are
number
of
research
on
going
for
analysis
of
radiation
hardness.
There
is
compulsion
to
in
v
estig
ate
impact
on
dynamic
characteristics
of
Si
and
SiC
po
wer
MOSFET
during
radiation
for
using
in
space
applications.
Hence
in
this
w
ork
the
in
v
estig
a-
tion
of
g
amma
ray
irradiation
on
silicon
carbide
po
wer
MOSFETs
by
measuring
the
capacitance-v
oltage
(C-V)
characteristic
as
a
function
of
drain-source
v
oltage
and
radiation
dose
le
v
el
and
also
compared
with
silicon
po
wer
MOSFET
.
3.
EXPERIMENT
AL
TEST
SET
-UP
FOR
AN
AL
YSIS
OF
RADIA
TION
EFFECTS
The
goal
of
this
e
xperiment
is
to
in
v
estig
ate
and
analysis
the
cobalt-60
g
amma
ray
ef
fects
on
the
dy-
namic
characteristics
of
both
Si
and
Si
C
po
wer
MOSFETs.
Commercially
a
v
ailable
Si
(T
OSHIB
A
2SK2662)
and
SiC
(R
OHM
SCT2H12NZ
and
SCT3160KL)
po
wer
MOSFETS
were
in
v
estig
ated
and
compared.
The
po
wer
MOSFETs
details
are
collected
from
the
data
sheet.
A
sample
size
of
fi
v
e
de
vices
for
each
radiation
le
v
el
in
total
twe
n
t
y
de
vices
used
for
this
e
xperiment.
First,
the
capacitances
including
output
capacitance
(
C
os
s
),
input
capacitance
(
C
iss
)
and
re
v
erse
transfer
capacitance
(
C
r
ss
)
were
characterized
prior
to
the
radiation
e
xposure
by
v
arying
the
Drain-Current
V
oltage
(
V
ds
)
in
the
Electrical
character
ization
laboratory
at
Uni
v
ersity
T
eknologi
PETR
ON
AS,
Malaysia.
The
capacitances
of
po
wer
MOSFET
calculated
by
using
equation,
as
in
(1).
C
iss
=
C
g
s
+
C
g
d
C
oss
=
C
ds
+
C
g
d
C
r
ss
=
C
g
d
(2)
where
the
C
g
s
,
C
ds
and
C
g
s
are
g
ate-to-source,
drain-to-source
and
g
ate-to-drain
respecti
v
ely
.
Ne
xt,
the
cobalt-60
g
amma
ray
irradiations
were
performed
at
Agenc
y
Nuclear
Malaysia,
Bangi
for
a
dose
le
v
el
of
50krad
to
600krad.
The
de
vices
are
measured
at
pre-rad,
50krad,
100krad,
300krad
and
600krad
for
v
ariable
bias
condition
using
Agilent
E4980A
LCR
meter
.
T
o
achie
v
e
the
analysis
of
radiation
ef
fects
on
dynamic
character
-
istics
of
po
wer
MOSFET
,
Funaki
et
al
method
is
used
to
measure
the
inter
electrode
capacitance
v
alues.
In
this
method
the
LCR
meter
with
e
xternal
po
wer
source
and
simple
circuit
configuration
to
measure
the
capacitance
v
alue.
Ho
we
v
er
,
the
LCR
meter
has
a
limited
of
up
to
40V
for
V
ds
biasing.
Hence,
the
circuit
is
connected
to
the
e
xtra
high
v
oltage
source
with
resistance
and
dc-blocking
capacitance
in
order
to
measure
the
capacitance
of
the
higher
v
oltage
in
V
ds
.
A
schematic
of
the
test
circuit
for
dif
fer
ent
capacitance
measurement
is
sho
wn
in
Figure
1.
T
o
achie
v
e
accurate
measurement
v
alue
of
the
internal
capacitance
dif
ferent
electrical
test
schematic
circuits
were
used
in
this
e
xperiment.
AC
V
Vm
A
Im
B
l
oc
ki
ng
C
a
pa
c
i
t
or
L
C
R
M
e
t
e
r
A
C
s
i
gna
l
s
our
c
e
Im
2
Im
1
DC
E
xt
e
r
na
l
D
C
s
ou
r
c
e
DC
AC
V
Vm
A
Im
E
xt
e
r
na
l
D
C
s
our
c
e
B
l
oc
ki
ng
C
a
pa
c
i
t
or
L
C
R
M
e
t
e
r
A
C
s
i
gna
l
s
our
c
e
Im
2
Im
1
DC
AC
V
Vm
A
Im
E
x
t
e
r
n
a
l
D
C
s
o
u
r
c
e
B
l
o
c
k
i
n
g
C
a
p
a
c
i
t
o
r
L
C
R
M
et
er
A
C
s
i
g
n
a
l
s
o
u
r
c
e
Im
1
Im
2
a
)
b
)
c
)
Figure
1.
Experiment
electrical
schematic
for
a)
Ciss,
b)
Coss
and
c)
Crss
measurement
Impact
of
gamma-r
ay
irr
adiation
on
dynamic...
(Sar
anya
Krishnamurthy)
Evaluation Warning : The document was created with Spire.PDF for Python.
1456
ISSN:
2088-8708
4.
RESUL
T
AND
AN
AL
YSIS
Pre
vious
related
studies
ha
v
e
sho
wn
that
after
g
amma
irradiation,
the
po
wer
MOSFET
threshold
v
oltage
(
V
th
)
shifts
ne
g
ati
v
e
and
the
drain
current
(
I
ds
)
w
as
increased.
Ho
we
v
er
,
the
changes
in
dynamic
electrical
characteristics
are
ne
glected,
yet
the
internal
capacitances
are
introduce
leakage
current
ef
fects.
Therefore,
the
analysis
of
capacitance
v
oltage
curv
es
as
a
f
u
nc
tion
of
radiation
dose
is
necessary
to
reflect
reliable
circuit
opera-
tion.
The
measurement
includes
input
(
C
iss
),
output
(
C
os
s
)
and
re
v
erse
transfer
(
C
r
ss
)
capacitances
of
both
Si
and
SiC
po
wer
MOSFETs
.
T
able
1
sho
ws
the
result
of
total
ionizing
dose
dependent
changes
in
leakage
charac-
teristics
of
Si
and
SiC
MOSFETs
irradiated
at
room
temperature.
Here
the
po
wer
MOSFETs
capacitance-v
oltage
characteristics
measured
at
V
g
s
=
0V
and
V
ds
changes
from
0
to
30
V
for
before
and
after
50krad,
100krad,
300
krad
and
600
krad.
The
measured
capacitances
are
related
to
the
terminal
capacitances
of
po
wer
MOSFET
,
refer
(2).
Ac-
cording
to
the
formula
C
g
d
is
the
k
e
y
of
these
capacitances
its
depends
on
equation
(3),
C
g
d
=
C
ox
(
C
inv
+
C
dp
)
C
ox
+
(
C
inv
+
C
dp
)
(3)
where,
C
dp
is
a
depletion
capacitance
which
is
in
v
ersely
proportional
to
the
depletion
width
of
MOS-
FETs
neck
re
gion
under
the
oxide
layer
,
C
ox
is
a
oxide
capacitance
and
C
inv
is
an
i
n
v
ersi
on
capacitance.
During
of
f
state
and
lo
w
V
ds
,
the
threshold
v
oltage
increase
C
inv
due
to
the
radiation
and
this
gi
v
es
rise
to
lar
ger
C
g
d
.
The
inc
reased
capacitance
as
a
function
of
lo
w
V
ds
and
latera
l
shift
during
high
drain-source
v
oltage
for
pre
and
post
radiation
plotted
in
Figure
4.
In
e
xpansion
to
the
change
in
C
g
d
,
the
measurements
subordinate
changes
in
C
oss
and
C
iss
moreo
v
er
incorporate
the
changes
in
C
ds
and
C
g
s
,
separately
.
Primarily
,
the
g
ate-source
capacitance
C
g
s
is
included
fringe
capacitance
between
g
ate
and
source,
o
v
erlap,
depletion,
oxide
and
interf
ace
trap
capacitances.
Especially
,
the
interf
ace
trap
capacitance
will
change
due
to
changing
interf
ace
trap
le
v
els.
Moreo
v
er
,
the
drain-source
capacitance
C
ds
will
change
less
with
g
amma
irradiat
ion
it
also
includes
the
po
wer
MOSFET
structure
junction
capacitance.
Figure
2
sho
ws
input
capacitances
(
C
is
s
)
of
Si
and
SiC
po
wer
MOS-
FETs
as
a
function
of
V
ds
and
dose
le
v
el.
Hence,
the
result
clear
that
the
shifts
in
capacitances
C
is
s
,
C
oss
,
and
C
r
ss
due
to
radiation
dose
le
v
el
is
primarily
due
to
the
v
ariations
in
Cgd.
Whereas
in
the
case
at
300
krad
and
600krad,
the
dose
dependent
shift
of
Crss
and
Coss
are
considerably
lar
ger
than
pre
radiation
b
ut
contrariwise
Ciss
is
decreases
than
pre
radiation.
The
Coss
of
Si
MOSFETs
ha
v
e
increased
25.9%
at
600krad
and
2.6%
at
300krad
for
0
to
30V
after
irradiation
compared
to
the
pre
radiation
which
is
sho
wn
in
Figure
3.
In
addition,
Crss
of
Si
MOSFETs
ha
v
e
a
significant
increment
which
is
more
than
26.17%
at
300krad
while
at
600krad
the
increm
ent
is
more
than
6%
from
0
to
30V
.
In
the
Ciss
measurement
of
Si
MOSFETs,
which
is
up
to
5.61%
at
600krad
b
ut
at
300krad
the
decrement
is
up
to
6.5%
from
0
to
30V
.This
is
because
the
Ciss
determines
dri
ving
condition
while
Crss
and
Coss
are
dictated
switching
s
peed.
Hence,
the
Coss
is
the
k
e
y
f
actor
component
of
switching
loss
to
af
fect
the
po
wer
loss
due
to
the
dischar
ging
and
char
ging
in
switching
mode.
In
addition,
the
Crss
and
Coss
ha
v
e
v
oltage
dependenc
y
due
to
the
de
vice
depletion
re
gion
modulating
with
applied
v
arying
operating
v
oltage.
The
capacitance
of
Rohm
SiC
1200V
and
Rohm
SiC
1700V
po
wer
MOSFETs
ha
v
e
a
significant
influent
by
the
radiation
at
300krad
and
600krad.
The
Coss
of
Rohm
SiC
1200V
has
decrease
up
to
17.36%
at
600krad
while
at
300krad
the
decrement
is
up
to
45.47%
from
0
to
30V
whereas
it
slightly
increase
aft
er
30V
at
600krad
compared
t
o
preradiation.
Ho
we
v
er
,
the
Coss
of
Rohm
SiC
1700V
has
increased
significantly
which
is
up
to
50%
at
600krad
while
at
300krad
the
increment
is
up
to
48%
from
0
to
30V
.
In
addition,
the
Cr
ss
of
Rohm
SiC
1200V
has
increased
up
to
24.5%
at
600krad
while
at
300krad
has
significant
increased
and
slightly
decrease
at
300krad
from
0
to
30V
.
Ho
we
v
er
,
the
Crss
of
Rohm
SiC
1700V
has
significant
increased
which
is
up
to
and
around
80%
at
300krad
and
600krad.
Also,
the
Ciss
of
Rohm
SiC
1200V
and
Rohm
SiC
1700V
ha
v
e
decrement
trends
after
irradiation
g
amma-ray
.
Rohm
SiC
1200V
has
small
decreased
up
to
7.85%
whereas
the
Rohm
SiC
1700V
has
significant
increased
which
up
to
29.8%
at
600krad
while
at
300krad
the
Rohm
SiC
1200V
has
decreased
up
to
10.15%
and
Rohm
SiC
1700V
has
decreased
up
to
26.40%.
It
concluded
that
the
switching
speed
is
limit
at
the
higher
doses
due
to
the
increase
capacitance
in
po
wer
MOSFETs.
Thus,
the
po
wer
circuit
may
operate
improper
due
to
the
switching
speed
has
changed
by
increasing
or
decreasing
capacitances
in
MOSFETs.
F
or
instance,
the
lar
ger
C
is
s
in
the
MOSFET
which
requires
more
g
ate
char
ge
that
supply
by
g
ate
dri
v
er
,
so
the
Ciss
is
changed,
this
required
to
redesign
the
g
ate
dri
v
er
in
order
to
turn
on
the
de
vice
channel.
Also,
the
lar
ger
output
switching
losses
due
to
the
lar
ger
C
os
s
.
Po
wer
MOSFETs
are
used
to
in
high
switching
application
due
to
the
changes
of
the
terminal
capacitance.
The
po
wer
circuit
has
to
redesign
IJECE
V
ol.
9,
No.
2,
April
2019
:
1453
–
1460
Evaluation Warning : The document was created with Spire.PDF for Python.
IJECE
ISSN:
2088-8708
1457
in
order
to
reduce
the
unw
anted
transients
in
the
circuit
due
to
the
g
ate
dri
v
er
or
switching
speed
is
changed.
T
able
1.
Experimental
Results
of
Pre
and
Post
Irradiated
Po
wer
MOSFETs
Drain-Source
V
oltage
Vds
(V)
Capacitance
(pF)
Po
wer
MOSFETs
Radiation
Dose
(krad)
0
1
2
8
10
20
30
Pre-Rad
1230.00
1230.00
1220.00
1210.00
1210.00
1190.00
1215.00
Post
50
1230.00
1230.00
1220.00
1210.00
1210.00
1190.00
1215.00
Post
100
1228.00
1229.00
1220.00
1212.00
1211.00
1189.00
1214.00
Post
300
1150.00
1151.00
1159.00
1161.00
1162.00
1162.00
1175.00
T
oshiba
Si
500
V
Post
600
1161.00
1161.00
1163.00
1163.00
1167.00
1168.00
1170.00
Pre-Rad
745.00
720.29
617.63
519.00
484.99
461.866
415.50
Post
50
745.00
720.29
617.63
519.00
484.99
461.866
415.50
Post
100
744.55
721.39
618.66
518.00
487.00
460.90
450.30
Post
300
705.58
647.16
609.68
493.10
478.84
475.42
447.32
Rohm
SiC
1200V
Post
600
706.05
663.75
619.54
499.98
479.24
455.98
445.07
Pre-Rad
398.00
363.40
359.64
289.20
216.15
210.89
210.35
Post
50
398.00
363.40
359.64
289.20
216.15
210.89
210.35
Post
100
399.12
365.30
358.64
287.5
218.15
210.91
211.32
Post
300
359.91
356.16
349.70
212.84
209.85
207.29
206.90
Ciss
Rohm
SiC
1700V
Post
600
340.00
311.7
261.87
203.03
201.81
200.10
200.10
Pre-Rad
795.38
765.38
534.0
268.00
200.00
85.11
70.00
Post
50
795.38
765.38
534.0
268.00
200.00
85.11
70.00
Post
100
794.14
764.28
535.4
268.2
199.01
84.22
69.8
Post
300
1610.0
1610.0
1238.0
280.27
205.26
105.23
77.69
T
oshiba
Si
500
V
Post
600
1724.0
1724.0
1724.0
437.97
314.28
119.83
88.13
Pre-Rad
777.66
737.66
531.92
272.02
244.49
173.92
133.89
Post
50
777.66
737.66
531.92
272.02
244.49
173.92
133.89
Post
100
776.89
736.96
514.12
272.08
244.23
173.81
133.72
Post
300
647.15
565.53
460.96
181.62
133.32
168.94
133.08
Rohm
SiC
1200V
Post
600
747.66
609.59
492.22
272.02
237.96
170.00
134.53
Pre-Rad
281.00
266.87
152.37
80.00
57.12
42.145
36.528
Post
50
281.00
266.87
152.37
80.00
57.12
42.145
36.528
Post
100
283.53
267.87
153.37
80.80
57.43
42.183
36.534
Post
300
333.00
288.00
226.25
67.41
58.91
42.78
36.65
Coss
Rohm
SiC
1700V
Post
600
338.00
297.00
229.21
68.4
59.016
43.21
36.80
Pre-Rad
612.10
542.34
542.34
320.11
210.00
83.34
69.50
Post
50
612.10
542.34
542.34
320.11
210.00
83.34
69.50
Post
100
611.56
541.40
543.30
322.19
211.12
83.87
69.50
Post
300
1723.00
1710.00
1328.00
410.27
305.26
115.23
87.69
T
oshiba
Si
500
V
Post
600
1147.60
1106.2
1071.8
491.00
345.20
95.12
73.90
Pre-Rad
435.00
400.00
395.80
286.31
220.53
174.50
133.00
Post
50
435.00
400.00
395.80
286.31
220.53
174.50
133.00
Post
50
435.00
400.00
395.80
286.31
220.53
174.50
133.00
Post
50
435.00
400.00
395.80
286.31
220.53
174.50
133.00
Post
50
435.00
400.00
395.80
286.31
220.53
174.50
133.00
Post
100
434.98
400.00
396.20
287.21
220.43
175.50
133.00
Post
300
505.50
473.06
421.26
254.10
229.95
174.83
143.98
Rohm
SiC
1200V
Post
600
541.56
473.68
421.00
250.19
225.65
174.8
143.00
Pre-Rad
150.00
140.00
137.00
78.00
53.00
40.00
35.28
Post
50
150.00
140.00
137.00
78.00
53.00
40.00
35.28
Post
100
150.62
140.50
136.8
77.80
52.60
39.70
35.16
Post
300
271.13
246.12
213.34
64.54
57.48
41.65
35.60
Crss
Rohm
SiC
1700V
Post
600
275.5
252.03
218.30
78.10
63.40
43.50
37.30
Impact
of
gamma-r
ay
irr
adiation
on
dynamic...
(Sar
anya
Krishnamurthy)
Evaluation Warning : The document was created with Spire.PDF for Python.
1458
ISSN:
2088-8708
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
1150
1200
1250
Capacitance (pF)
Si 500V
Pre
50krad
100krad
300krad
600krad
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
400
500
600
700
800
Capacitance (pF)
SiC 1200V
Pre
50krad
100krad
300krad
600krad
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
200
250
300
350
400
Capacitance (pF)
SiC 1700V
Pre
50krad
100krad
300krad
600krad
Figure
2.
Ciss
for
Si
and
SiC
po
wer
MOSFETs
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
0
500
1000
1500
2000
Capacitance (pF)
Si 500V
Pre
50krad
100krad
300krad
600krad
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
0
200
400
600
800
Capacitance (pF)
SiC 1200V
Pre
50krad
100krad
300krad
600krad
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
0
100
200
300
400
Capacitance (pF)
SiC 1700V
Pre
50krad
100krad
300krad
600krad
Figure
3.
Coss
for
Si
and
SiC
po
wer
MOSFETs
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
0
500
1000
1500
2000
Capacitance (pF)
Si 500V
Pre
50krad
100krad
300krad
600krad
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
0
200
400
600
Capacitance (pF)
SiC 1200V
Pre
50krad
100krad
300krad
600krad
0
5
10
15
20
25
30
Drain-source voltage V
ds
(V)
0
100
200
300
Capacitance (pF)
SiC 1700V
Pre
50krad
100krad
300krad
600krad
Figure
4.
Crss
for
Si
and
SiC
po
wer
MOSFETs
IJECE
V
ol.
9,
No.
2,
April
2019
:
1453
–
1460
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IJECE
ISSN:
2088-8708
1459
5.
CONCLUSION
The
g
amma
ray
induced
total
dose
ef
fects
on
Si
(T
OSHIB
A
2SK2662)
and
SiC
(R
OHM
SCT2H12NZ
and
SCT3160KL)
MOSFETs
ha
v
e
resulted
in
dynamic
characteristics
as
a
function
of
v
ariable
drain
bias
and
dose
le
v
el.
These
po
wer
MOSFETs
perform
well
after
a
total
dose
of
100
krad,
and
may
operate
up
to
300
krad.
From
the
preceding
results,
it
is
v
ery
clear
that
changes
in
de
vice
capacitances
are
accounted
for
switching
operations.
Increase
in
oxide
and
interf
ace
trap
densities
is
found
to
be
the
main
de
gradation
mechanism
of
g
amma
irradiated
transistors.
The
measurements
c
o
nfi
rm
the
f
act
that
g
amma
rays
seriously
de
grade
the
de
vice
performance
to
a
greater
e
xtent.
Additionally
,
the
f
ailure
modes
in
SiC
po
wer
MOSFETs
can
dif
fer
depending
on
the
component
and
the
v
endor
for
si
milar
v
alues
of
bias
normalized
by
rated
v
oltage.
Therefore,
the
research
and
de
v
elopment
is
continuing
to
in
v
estig
ate
SiC
po
wer
MOSFETs
in
order
to
mak
e
high
switching
and
high
current
de
vice
that
a
v
ailable
operate
normally
at
radiation
re
gion.
A
CKNO
WLEDGEMENT
The
research
w
as
supported
by
Fundamental
Research
Grant
Scheme
No.
0153AB-L30.
The
authors
w
ould
lik
e
to
thanks
Industrial
T
echnology
Di
vision,
Agenc
y
Nuclear
Malaysia
for
the
g
amma-ray
irradiation
f
a-
cility
.
The
authors
also
ackno
wledge
the
support
of
Uni
v
ersiti
T
eknologi
PETR
ON
AS
for
their
research
f
acilities.
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ISSN:
2088-8708
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BIOGRAPHIES
OF
A
UTHORS
Saranya
Krishnamur
th
y
recei
v
ed
B.E
de
gree
from
Department
of
El
ectronics
and
Communica-
tion
Engineering,
Coimbatore
Institute
of
Engineering
and
T
echnology
,
Coimbatore,
India
in
the
year
2011
and
M.E
de
gree
from
Department
of
Applied
Electronics,
Sri
Krishna
Colle
ge
of
Engi-
neering
and
T
echnology
,
Coimbatore,
India
in
the
year
2013.
She
is
currently
pursuing
the
Ph.D.
from
Department
of
Electrical
and
Electronics
Engineering,
Uni
v
ersiti
T
eknologi
PETR
ON
AS,
Malaysia.
Her
current
research
interest
includes
the
Po
wer
electronics,
VLSI
desi
gn,
Digital
Elec-
tronics
and
Semiconductor
De
vices.
From
2013
to
2015,
she
w
as
an
Assistance
Professor
at
Insti-
tute
of
Bannari
Amman
Institute
of
technology
,
Erode,
India.
She
is
af
filiated
with
IEEE
as
student
member
.
Ramani
Kannan
is
a
senior
lecturer
in
Uni
v
ersiti
T
ecknologi
PETR
ON
AS
(UTP),
Malaysia.
He
recei
v
ed
his
B.E
de
gree
from
Bharathiyar
Uni
v
ersity
,
India.
Later
on
completed
his
M.E
and
PhD
in
Po
wer
Electronics
and
Dri
v
es
from
Anna
Uni
v
ersity
respecti
v
ely
.
He
w
as
an
Associate
Profes-
sor
in
the
department
of
Electrica
l
and
Electronics
Engineering
at
the
K.S.
Rang
asamy
Colle
ge
of
T
echnology
(Autonomous
),
India.
He
is
a
senior
member
IEEE,
IETE,
ISTE,
and
Institute
of
Ad-
v
anced
Engineering
and
Science
Member
.
He
obtained
Carrier
A
w
ard
for
Y
oung
T
eacher
(CA
YT)
from
AICTE,
Ne
w
Delhi
(2012),
and
obtained
an
a
w
ard
of
Y
oung
Scientist
in
Po
wer
Electronics
and
Dri
v
es,
INID
A
(2015).
He
is
the
Editor
-in-Chief
of
the
Journal
of
Asian
Scientific
Research
and
Re
gional
editor
South-Asia
in
International
Journal
of
Computer
Aided
Engineering
and
T
ech-
nology
,
Inderscience
publisher
(UK).
His
research
interest
in
v
olv
es
po
wer
electronics,
in
v
erters,
modeling
of
induction
motors,
and
optimization
techniques.
Chay
Che
Kiong
recei
v
ed
Bachelor
de
gree
from
Department
of
Electrical
and
Electronics
Engi-
neering,
in
Uni
v
ersiti
T
ecknologi
PETR
ON
AS
(UTP),
Malaysia
in
the
year
2017.
He
is
currently
w
orking
as
System
Sales
Engineer
in
AEX
SYSTEM
Pty
Ltd,Malaysia.
His
research
interest
in-
cludes
the
po
wer
electronics,
po
wer
systems
and
netw
orking.
He
w
as
w
ork
ed
as
b
usiness
de
v
elop-
ment
engineer
trainee
at
Robert
Bosch
sdn
bhd,
Selangor
,
Malaysia.
T
aib
B
Ibrahim
graduated
from
Co
v
entry
Uni
v
ersity
,UK,
post
graduated
and
Ph.D.De
grees
in
Electrical
Ma
chine
Design,
from
Uni
v
ersity
of
Strathclyde,
UK.
Currently
w
orking
as
Associate
Professor
in
Electrical
and
Electronics
Engineering
Department,Uni
v
ersiti
T
eknologi
PETR
ON
AS,
Malaysia.
He
has
publis
hed
more
than
115
papers
in
international/national
conferences
and
journals
and
se
v
en
book
chapters.
He
is
acti
v
e
and
professional
member
for
man
y
editorial
and
advisory
boards
of
international
journals
and
IEEE
conferences.
His
research
interest
in
v
olv
es
Linear
and
rotary
electrical
machine
design,
Rene
w
able
ener
gy
,
Po
wer
electronic
con
v
erter
.
IJECE
V
ol.
9,
No.
2,
April
2019
:
1453
–
1460
Evaluation Warning : The document was created with Spire.PDF for Python.