I
nte
rna
t
io
na
l J
o
urna
l o
f
Adv
a
nces in Applie
d Science
s
(
I
J
AAS)
Vo
l.
5
,
No
.
1
,
Ma
r
ch
2
0
1
6
,
p
p
.
1
~
12
I
SS
N:
2252
-
8814
1
J
o
ur
na
l ho
m
ep
a
g
e
:
h
ttp
:
//ia
e
s
jo
u
r
n
a
l.c
o
m/o
n
lin
e/in
d
ex
.
p
h
p
/I
J
AAS
Effec
t
o
f
No
v
el N
a
no
co
m
po
site Ma
terials
f
o
r En
ha
ncing
Perf
o
r
m
a
nce
of T
hin Fil
m
Tra
nsis
t
o
r TFT Mo
del
Yo
us
s
ef
M
o
ba
ra
k
*
,
*
*
,
M
o
a
m
e
n At
ef
*
*
*
D
e
p
a
rt
m
e
n
t
o
f
El
e
c
tri
c
a
l
En
g
in
e
e
rin
g
,
F
a
c
u
lt
y
o
f
En
g
in
e
e
rin
g
,
Ra
b
ig
h
,
Kin
g
A
b
d
u
laz
iz Un
iv
e
rsit
y
,
S
a
u
d
i
A
ra
b
ia
*
*
De
p
a
rt
m
e
n
t
o
f
El
e
c
tri
c
a
l
En
g
i
n
e
e
rin
g
,
F
a
c
u
lt
y
o
f
En
e
rg
y
En
g
in
e
e
rin
g
,
A
s
wa
n
Un
iv
e
rsit
y
,
Eg
y
p
t
Art
icle
I
nfo
AB
ST
RAC
T
A
r
ticle
his
to
r
y:
R
ec
eiv
ed
Dec
1
2
,
2
0
1
5
R
ev
i
s
ed
Feb
18
,
2
0
1
6
A
cc
ep
ted
Feb
2
7
,
2
0
1
6
T
h
e
p
o
ten
ti
a
l
im
p
a
c
t
o
f
h
ig
h
p
e
rm
it
ti
v
it
y
g
a
te
d
iele
c
tri
c
s
o
n
th
in
f
il
m
tran
sisto
rs
sh
o
rt
c
h
a
n
n
e
l
a
n
d
c
i
rc
u
it
p
e
rf
o
rm
a
n
c
e
h
a
s
b
e
e
n
stu
d
ied
u
sin
g
h
ig
h
ly
a
c
c
u
ra
te
a
n
a
l
y
ti
c
a
l
m
o
d
e
ls
.
In
a
d
d
it
io
n
,
t
h
e
g
a
te
-
to
-
c
h
a
n
n
e
l
c
a
p
a
c
it
a
n
c
e
a
n
d
p
a
ra
siti
c
f
rin
g
e
c
a
p
a
c
it
a
n
c
e
s
h
a
v
e
b
e
e
n
e
x
tr
a
c
ted
.
T
h
e
su
g
g
e
ste
d
m
o
d
e
l
in
th
is
p
a
p
e
r
h
a
s
b
e
e
n
in
c
re
a
se
d
th
e
su
r
f
a
c
e
p
o
ten
ti
a
l
a
n
d
d
e
c
re
a
se
d
th
e
th
re
sh
o
ld
v
o
l
tag
e
,
w
h
e
n
e
v
e
r
th
e
c
o
n
v
e
n
ti
o
n
a
l
sili
c
o
n
d
i
o
x
id
e
g
a
te
d
iele
c
tri
c
is
re
p
lac
e
d
b
y
h
i
g
h
-
K
g
a
te
d
iele
c
tri
c
n
o
v
e
l
n
a
n
o
c
o
m
p
o
site
P
VP/
L
a
2
O
3
K
ox
=
2
5
.
A
lso
,
it
h
a
s
b
e
e
n
in
v
e
stig
a
ted
th
a
t
a
d
e
c
re
a
se
in
p
a
ra
siti
c
o
u
ter
f
rin
g
e
c
a
p
a
c
it
a
n
c
e
a
n
d
g
a
te
-
to
-
c
h
a
n
n
e
l
c
a
p
a
c
it
a
n
c
e
,
w
h
e
n
e
v
e
r
th
e
c
o
n
v
e
n
ti
o
n
a
l
sili
c
o
n
n
it
ri
d
e
is
re
p
lac
e
d
b
y
lo
w
-
K
g
a
te
sid
e
wa
ll
sp
a
c
e
r
d
iele
c
tri
c
n
o
v
e
l
n
a
n
o
c
o
m
p
o
site
P
T
F
E/
S
iO
2
K
sp
=
2
.
9
.
F
i
n
a
ll
y
,
it
h
a
s
b
e
e
n
d
e
m
o
n
stra
ted
th
a
t
u
sin
g
lo
w
-
K g
a
te sid
e
w
a
ll
s
w
it
h
h
ig
h
-
K g
a
te i
n
s
u
lato
rs ca
n
b
e
d
e
c
re
a
se
d
th
e
g
a
te
f
rin
g
in
g
f
ield
a
n
d
th
re
sh
o
ld
v
o
lt
a
g
e
.
I
n
a
d
d
it
i
o
n
,
f
a
b
rica
ti
o
n
o
f
n
a
n
o
c
o
m
p
o
sites
f
ro
m
p
o
ly
m
e
rs
a
n
d
n
a
n
o
-
o
x
i
d
e
p
a
rti
c
les
f
o
u
n
d
to
h
a
v
e
p
o
ten
ti
a
l
c
a
n
d
id
a
tes
f
o
r
u
sin
g
it
i
n
a
w
id
e
ra
n
g
e
o
f
a
p
p
li
c
a
ti
o
n
s
in
lo
w
c
o
st d
u
e
t
o
l
o
w
p
ro
c
e
ss
tem
p
e
ra
tu
re
o
f
th
e
se
n
a
n
o
c
o
m
p
o
sites
m
a
teria
ls.
K
ey
w
o
r
d
:
C
OM
S
Nan
o
co
m
p
o
s
ite
g
ate
d
ielec
tr
ic
Sid
e
w
al
l sp
ac
er
T
h
in
Fil
m
T
r
an
s
is
to
r
(
T
F
T
)
T
h
r
esh
o
ld
v
o
ltag
e
Co
p
y
rig
h
t
©
201
6
In
s
t
it
u
te o
f
A
d
v
a
n
c
e
d
E
n
g
i
n
e
e
rin
g
a
n
d
S
c
ien
c
e
.
Al
l
rig
h
ts
re
se
rv
e
d
.
C
o
r
r
e
s
p
o
nd
ing
A
uth
o
r
:
Yo
u
s
s
e
f
Mo
b
ar
ak
,
Dep
ar
te
m
en
t o
f
E
lectr
ical
E
n
g
in
ee
r
in
g
,
Facu
lt
y
o
f
E
n
er
g
y
E
n
g
i
n
ee
r
in
g
,
A
s
w
a
n
Un
iv
er
s
it
y
,
8
1
5
2
8
,
A
s
w
an
,
E
g
y
p
t
.
E
m
ail:
y
s
o
li
m
a
n
@
a
s
w
u
.
ed
u
.
e
g
1.
I
NT
RO
D
UCT
I
O
N
I
n
teg
r
ated
C
ir
cu
it
s
I
C
’
s
ca
n
i
n
clu
d
e
a
s
m
a
n
y
as
h
u
n
d
r
ed
m
illi
o
n
tr
an
s
is
to
r
s
o
r
m
o
r
e.
As
in
cr
ea
s
e
d
g
ate
lea
k
ag
e
is
o
n
e
m
aj
o
r
li
m
i
tin
g
f
ac
to
r
o
n
a
g
g
r
es
s
i
v
e
s
ca
li
n
g
ef
f
ec
ti
v
e
g
ate
-
d
ielec
tr
ic
t
h
i
ck
n
e
s
s
w
ill
r
eq
u
ir
e
alter
n
ati
v
e
m
ater
ial
s
w
it
h
h
ig
h
er
p
er
m
itti
v
it
y
’
s
Ko
x
an
d
g
r
ea
ter
p
h
y
s
ical
th
ic
k
n
ess
es,
a
f
ac
to
r
o
f
(
Ko
x
/KSiO2
)
to
p
r
ev
en
t
d
ir
ec
t
g
ate
t
u
n
n
el
in
g
[
1
]
,
[
3
]
.
Ho
w
ev
er
,
th
e
u
s
e
o
f
a
h
ig
h
-
K
g
ate
m
ater
ial
m
a
y
r
esu
lt
in
d
ielec
tr
ic
th
ic
k
n
e
s
s
e
s
co
m
p
ar
ab
le
to
th
e
d
ev
ice
g
at
e
len
g
t
h
,
f
r
i
n
g
i
n
g
f
ield
s
f
r
o
m
th
e
g
a
te
to
th
e
s
o
u
r
ce
/d
r
ain
r
eg
io
n
s
co
m
p
r
o
m
is
in
g
t
h
e
s
h
o
r
t
-
ch
a
n
n
el
p
er
f
o
r
m
an
ce
i
n
cr
ea
s
i
n
g
.
Ku
m
ar
an
d
C
h
a
u
d
h
r
y
[
4
]
h
av
e
ea
r
lier
d
ev
elo
p
ed
a
m
o
d
el
f
o
r
th
e
t
h
r
es
h
o
ld
v
o
lta
g
e
f
o
r
d
u
al
m
ater
ial
g
ate
SOI
-
MO
S
F
E
T
s
.
Ou
r
s
u
g
g
ested
m
o
d
el
f
o
r
th
e
t
h
r
esh
o
ld
v
o
lta
g
e
f
o
r
th
e
s
i
n
g
le
n
an
o
co
m
p
o
s
ite
m
ater
ial
g
ate
SOI
-
MO
S
FE
T
s
b
y
in
cl
u
d
in
g
t
h
e
ef
f
ec
t
o
f
t
h
e
in
ter
n
al
f
r
in
g
e
c
ap
ac
itan
ce
o
n
th
e
t
h
r
es
h
o
ld
v
o
ltag
e,
w
h
ic
h
ca
n
b
e
ea
s
i
l
y
,
s
o
lv
ed
u
s
in
g
a
f
e
w
iter
atio
n
s
.
I
n
o
r
d
er
to
ac
cu
r
at
el
y
ch
ar
ac
ter
ize
T
FT
d
ev
ices,
th
e
th
r
es
h
o
ld
v
o
ltag
e
m
u
s
t
b
e
w
ell
f
o
r
m
u
lated
.
Ou
r
s
u
g
g
e
s
ted
m
o
d
el
w
it
h
n
o
v
el
n
an
o
co
m
p
o
s
i
te
m
ater
ial
P
VP
/L
a2
O3
w
ith
h
i
g
h
d
ielec
tr
i
c
co
n
s
ta
n
t
e
n
h
a
n
ce
s
th
e
p
er
f
o
r
m
a
n
ce
o
f
MO
SF
E
T
s
.
B
y
i
n
cr
ea
s
i
n
g
i
n
t
h
e
s
u
r
f
ac
e
p
o
ten
tial
an
d
d
ec
r
ea
s
in
g
t
h
e
t
h
r
es
h
o
ld
v
o
ltag
e.
I
t
h
as
b
ee
n
d
e
m
o
n
s
tr
ated
a
s
u
ita
b
le
lo
w
-
p
er
m
itti
v
it
y
lo
w
-
K
g
a
te
s
id
e
w
al
l
s
p
ac
er
d
ielec
tr
ic
n
o
v
el
n
an
o
co
m
p
o
s
ite
PT
FE/SiO2
,
Ksp
=2
.
9
,
w
h
ic
h
ca
n
r
ep
lace
Si3
N4
,
Ksp
=7
.
5
[
4
-
1
1
]
.
T
h
e
en
er
g
y
o
f
t
h
e
b
a
n
d
ed
g
e
is
th
e
t
h
r
esh
o
ld
co
n
d
itio
n
f
o
r
co
n
d
u
ctio
n
i
n
t
h
e
T
DT
(
s
o
m
e
a
u
t
h
o
r
s
r
ed
ef
in
e
t
h
e
T
DT
m
o
d
el
as
th
e
m
o
b
ilit
y
ed
g
e
m
o
d
el
[
1
2
]
b
y
m
o
d
i
f
y
in
g
t
h
e
tail
s
h
ap
e)
.
I
t
ca
n
b
e
s
h
o
w
n
t
h
at
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8814
IJ
AA
S
Vo
l.
5
,
No
.
1
,
Ma
r
ch
201
6
:
1
–
12
2
th
e
e
x
p
r
ess
io
n
s
f
o
r
μ
o
d
er
iv
e
d
in
th
e
T
DT
[
1
3
]
an
d
VR
H
[
1
4
]
th
eo
r
ies d
if
f
er
b
y
t
w
o
co
n
s
t
an
t
m
u
ltip
lier
s
[
1
5
]
.
T
h
is
s
etti
n
g
v
io
lates
t
h
e
co
n
d
itio
n
s
f
o
r
p
r
o
p
er
u
s
e
o
f
th
e
i
n
f
i
n
ite
i
n
teg
r
atio
n
li
m
it
i
n
th
e
g
a
m
m
a
f
u
n
ctio
n
in
t
h
e
t
h
eo
r
etica
l
d
er
iv
atio
n
s
in
[
1
3
]
,
[
1
4
].
T
h
is
p
r
o
b
lem
w
a
s
r
ec
en
tl
y
id
en
ti
f
ied
i
n
[
16
]
.
T
h
e
v
ar
iet
y
o
f
m
o
d
els
f
o
r
OT
F
T
s
is
lar
g
e,
r
an
g
i
n
g
f
r
o
m
s
i
m
p
le
p
h
e
n
o
m
e
n
o
lo
g
ical
m
o
d
el
s
b
ased
o
n
s
i
m
ilar
it
ies
t
o
cr
y
s
tal
FET
s
,
to
f
i
n
ite
-
ele
m
en
t
m
o
d
els
o
f
t
h
e
T
F
T
s
tr
u
ctu
r
e
[
17
]
,
an
d
f
r
o
m
th
e
ad
ap
tatio
n
o
f
a
-
T
FT
ch
ar
g
e
s
h
ee
t
m
o
d
el
s
[1
8
]
to
li
m
it
in
g
m
o
d
els
[
19
]
.
E
ac
h
o
f
th
e
s
e
m
o
d
els
h
as
ad
v
an
ta
g
es
an
d
d
is
ad
v
an
ta
g
e
s
,
ad
d
r
ess
in
g
d
if
f
er
en
t
is
s
u
e
s
s
u
c
h
as
co
m
p
le
x
it
y
,
ac
c
u
r
ac
y
,
r
ep
ea
tab
ilit
y
,
p
h
y
s
ics,
ch
ar
a
cter
izatio
n
tech
n
iq
u
es,
o
r
co
n
v
er
g
en
ce
.
O
n
t
h
e
o
th
er
h
a
n
d
,
t
h
e
o
b
j
ec
t o
f
th
e
m
o
d
els is
t
h
e
s
a
m
e
ac
cu
r
ate
p
r
ed
ictio
n
o
f
th
e
elec
tr
ical
c
h
ar
ac
ter
is
tics
o
f
OT
FT
s
.
R
ec
en
t
l
y
,
t
h
e
f
r
i
n
g
i
n
g
ca
p
ac
it
an
ce
w
as
p
r
esen
t
th
r
o
u
g
h
t
h
e
c
o
n
f
o
r
m
al
m
ap
p
in
g
o
f
p
o
ten
tial
s
p
ac
e.
Fri
n
g
in
g
I
n
d
u
ce
d
B
ar
r
ier
L
o
w
i
n
g
FIB
L
i
s
th
e
e
f
f
ec
t
o
f
c
h
ar
g
es
i
n
d
u
ce
d
b
y
th
e
f
r
i
n
g
i
n
g
ca
p
ac
i
tan
ce
s
,
a
t
h
r
es
h
o
ld
v
o
ltag
e
ca
s
e
i
n
cl
u
d
in
g
th
e
f
r
in
g
in
g
ca
p
ac
itan
ce
e
f
f
ec
t
is
s
tu
d
ied
an
d
th
e
i
n
f
lu
e
n
ce
o
f
g
ate
d
ielec
tr
ic
o
n
t
h
r
es
h
o
ld
v
o
ltag
e
i
s
d
is
cu
s
s
ed
[
20
-
27
].
2.
T
H
I
N
F
I
L
M
T
RANSI
ST
O
R
T
F
T
M
O
DE
L
A
m
o
d
el
cr
o
s
s
-
s
ec
t
io
n
al
o
f
a
n
SOI
-
MO
SF
E
T
w
it
h
a
h
i
g
h
-
Ko
k
g
ate
d
ielec
tr
ic
is
s
h
o
w
n
in
F
ig
u
r
e
1
(
a)
,
w
it
h
th
e
f
r
in
g
i
n
g
f
ield
lin
es
f
r
o
m
t
h
e
b
o
tto
m
o
f
th
e
g
a
te
elec
tr
o
d
e
to
th
e
d
r
ain
an
d
s
o
u
r
ce
r
eg
io
n
s
.
Fo
r
s
i
m
p
lic
it
y
,
t
h
at
c
ir
cu
lar
f
ield
l
in
es
a
s
s
h
o
w
n
i
n
Fi
g
u
r
e
1
(
b
)
,
an
d
to
th
e
ap
p
r
o
ac
h
u
s
ed
i
n
s
t
u
d
ies
f
o
r
th
e
o
t
h
er
co
m
p
o
n
e
n
t
s
o
f
p
ar
asit
ic
ca
p
a
cit
an
ce
[
7
]
,
[
8
]
.
T
h
e
in
f
in
i
te
s
i
m
a
l
ca
p
ac
itan
ce
s
i
n
t
h
e
h
i
g
h
-
Ko
k
an
d
s
p
ac
er
r
eg
io
n
s
,
r
esp
ec
ti
v
el
y
ca
n
b
e
wr
itten
as:
(
)
,
.
an
d
(
)
(
)
(
1
)
W
h
er
e
K
ok
is
t
h
e
p
er
m
itti
v
it
y
o
f
th
e
g
ate
d
ielec
tr
ic,
K
SP
is
t
h
e
p
er
m
itti
v
it
y
o
f
s
p
ac
er
m
ate
r
ial,
W
is
th
e
w
id
t
h
o
f
th
e
tr
an
s
is
to
r
s
tr
u
ctu
r
e,
a
n
d
to
k
is
t
h
e
g
ate
-
d
ie
lectr
ic
th
ic
k
n
es
s
.
Si
n
ce
d
C
1
a
n
d
d
C
2
ar
e
i
n
s
er
ie
s
,
th
e
n
et
i
n
f
i
n
ites
i
m
a
l c
ap
ac
itan
ce
ca
n
b
e
w
r
itte
n
as:
(
)
(
2
)
T
h
e
to
tal
in
ter
n
al
f
r
in
g
e
ca
p
ac
itan
ce
ca
n
b
e
o
b
tain
ed
b
y
in
te
g
r
atin
g
(
2
)
o
v
er
th
e
g
at
e
-
d
ielec
tr
ic
th
ic
k
n
e
s
s
as
f
r
i
n
g
i
n
g
:
∫
(
)
(
3
)
(
–
)
(
)
:
(
4
)
Fro
m
th
e
e
n
tire
p
er
i
m
eter
o
f
t
h
e
b
o
tto
m
ed
g
e
o
f
t
h
e
g
ate
ele
ctr
o
d
e
as:
(
(
)
)
(
4
)
F
or
,
an
d
W
h
er
e:
is
th
e
g
ate
len
g
t
h
.
Evaluation Warning : The document was created with Spire.PDF for Python.
IJ
AA
S
I
SS
N:
2252
-
8814
E
ffect
o
f No
ve
l Na
n
o
co
mp
o
s
ite
Ma
teri
a
ls
fo
r
E
n
h
a
n
cin
g
P
er
fo
r
ma
n
ce
o
f Th
in
F
ilm
… (
Yo
u
s
s
ef
Mo
b
a
r
a
k
)
3
Fig
u
r
e
1
(
a
)
.
C
r
o
s
s
-
s
ec
t
io
n
al
o
f
an
SOI
-
M
OSFET
,
I
n
ter
n
al
p
ar
asit
ic
f
r
in
g
e
ca
p
ac
i
tan
ce
Fig
u
r
e
1
(
b
)
.
C
r
o
s
s
-
s
ec
tio
n
al
o
f
an
SOI
-
M
OSFET
,
Frin
g
in
g
f
ield
b
o
tto
m
o
f
t
h
e
g
ate
elec
tr
o
d
e
T
h
e
to
tal
f
r
i
n
g
e
ca
p
ac
ita
n
ce
c
an
b
e
o
b
tai
n
ed
b
y
E
q
u
atio
n
(
4
)
,
an
d
th
e
p
er
i
m
eter
o
f
t
h
e
b
o
tto
m
ed
g
e
o
f
t
h
e
g
ate
e
lectr
o
d
e
[
2
]
.
Sin
c
e
th
e
ac
co
u
n
t
f
o
r
elec
tr
ic
f
ield
lin
es
f
r
in
g
i
n
g
f
r
o
m
t
h
e
b
o
tto
m
ed
g
e
o
f
t
h
e
g
ate
to
eith
er
th
e
s
o
u
r
ce
o
r
th
e
d
r
ain
r
eg
io
n
o
n
l
y
,
t
h
e
in
ter
n
al
f
r
in
g
e
ca
p
ac
itan
ce
ca
n
b
e
w
r
i
tten
a
s
:
(
(
)
)
(
)
,
(
5
)
Fo
r
an
d
I
t
ca
n
b
e
s
e
en
th
at
E
q
u
.
(
3
)
r
e
d
u
ce
s
to
E
q
u
atio
n
(
5
)
in
th
e
li
m
it
K
ok
→
K
SP
b
u
t
f
o
r
a
co
n
s
t
an
t
f
ac
to
r
.
T
h
is
d
if
f
er
en
ce
ar
is
e
s
b
ec
au
s
e
o
f
th
e
a
s
s
u
m
p
t
io
n
o
f
th
e
f
r
in
g
in
g
elec
tr
ic
f
ield
li
n
es
is
b
ein
g
cir
cu
lar
w
h
ile
d
er
iv
in
g
E
q
u
atio
n
(
3
)
.
th
u
s
,
m
u
ltip
lied
b
y
t
h
e
ab
o
v
e
f
ac
to
r
eq
u
all
y
0
.
1
5
to
o
b
tain
:
(
)
(
–
)
(
)
(
6
)
T
h
ese
ex
p
r
ess
io
n
r
ed
u
ce
s
to
E
q
u
.
(
5
)
th
e
li
m
i
t
K
o
k
→
K
SP
,
an
d
h
en
ce
E
q
u
.
(
6
)
,
th
at
t
h
e
s
ep
ar
atio
n
b
et
w
ee
n
th
e
elec
tr
o
d
es
is
v
er
y
s
m
all
i
n
co
m
p
ar
is
o
n
to
th
e
le
n
g
t
h
o
f
t
h
e
elec
tr
o
d
es
[
1
0
]
.
T
h
is
is
ce
r
tai
n
l
y
n
o
t
th
e
ca
s
e
i
n
s
h
o
r
t
ch
a
n
n
el
h
i
g
h
-
k
d
ielec
tr
ic
SOI
-
M
OSFET
s
.
F
u
r
th
er
m
o
d
if
ied
to
r
ep
r
esen
t
t
h
e
tr
u
e
p
ictu
r
e,
a
n
d
th
e
f
r
in
g
i
n
g
f
ield
f
r
o
m
t
h
e
g
at
e
to
th
e
s
o
u
r
ce
/d
r
ain
r
e
g
io
n
s
i
n
cr
ea
s
es a
s
a
f
u
n
c
tio
n
o
f
(
t
ox
/L
g
)
.
T
h
is
i
s
t
h
e
e
f
f
ec
t
o
f
th
e
in
cr
ea
s
ed
cr
o
w
d
i
n
g
o
f
f
ield
li
n
es
i
n
t
h
e
s
p
ac
er
r
eg
io
n
f
o
r
lar
g
e
g
ate
-
d
ielec
tr
ic
t
h
ick
n
e
s
s
es,
f
o
r
to
x
co
m
p
ar
ab
le
to
L
g
,
t
h
e
f
r
in
g
e
c
ap
ac
itan
c
e
i
n
t
h
e
s
p
ac
er
r
eg
io
n
is
m
o
r
e
t
h
a
n
w
h
at
h
as
b
ee
n
ass
u
m
ed
w
h
ile
E
q
u
.
(
6
)
.
to
ac
co
u
n
t f
o
r
th
i
s
,
an
e
f
f
e
ctiv
e
s
p
ac
er
d
ielec
tr
ic
co
n
s
ta
n
t a
s
:
(
)
(
7
)
Su
b
s
ti
tu
t
in
g
(
7
)
i
n
p
lace
o
f
K
SP
i
n
(
6
)
,
th
e
n
o
b
tai
n
t
h
e
f
i
n
al
e
x
p
r
ess
io
n
f
o
r
th
e
p
ar
asit
ic
in
ter
n
al
f
r
in
g
e
ca
p
ac
itan
ce
a
s
:
(
)
(
8
)
W
h
er
e:
(
)
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8814
IJ
AA
S
Vo
l.
5
,
No
.
1
,
Ma
r
ch
201
6
:
1
–
12
4
2
.
1
.
Su
g
g
este
d H
ig
h
-
K
G
a
t
e
Dielec
t
ric
M
o
del a
nd
Select
ed
Na
no
-
M
a
t
er
i
a
ls
T
h
e
p
ar
asit
ic
ca
p
ac
itan
ce
s
ar
e
b
ec
o
m
in
g
an
i
m
p
o
r
ta
n
t
i
s
s
u
e
f
o
r
d
esi
g
n
in
g
lo
g
ic
c
ir
cu
it
s
to
r
ed
u
c
e
MO
S
tr
an
s
is
to
r
d
i
m
e
n
s
io
n
s
i
n
to
th
e
d
ee
p
s
u
b
-
m
icr
o
m
eter
r
e
g
i
m
e.
Hen
ce
,
an
ac
c
u
r
ate
s
u
g
g
ested
m
o
d
el
i
n
o
f
b
o
tto
m
f
r
i
n
g
in
g
ca
p
ac
ita
n
ce
s
is
n
ec
es
s
ar
y
to
p
r
ed
ict
cir
cu
it
p
er
f
o
r
m
an
ce
b
ef
o
r
e
f
ab
r
icatio
n
,
t
h
u
s
;
t
h
e
s
u
g
g
e
s
ted
m
o
d
el
i
s
an
e
f
f
ic
ien
t
to
o
l
in
d
e
s
ig
n
i
n
g
an
d
ch
ar
ac
ter
izatio
n
o
f
h
i
g
h
-
K
g
ate
-
d
ielec
tr
ic
SOI
-
MO
SF
E
T
s
in
cl
u
d
in
g
t
h
e
e
f
f
ec
ts
o
f
p
ar
asit
ic
in
ter
n
al
f
r
in
g
e
c
ap
ac
itan
ce
[
2
8
]
.
T
h
e
co
n
v
e
n
ti
o
n
al
g
ate
d
ielec
tr
ic
s
tr
u
ct
u
r
e
d
iag
r
a
m
o
f
t
h
e
T
FT
d
ev
i
ce
s
u
n
d
er
s
t
u
d
y
is
s
h
o
wn
i
n
F
ig
u
r
e
2
(
a)
,
s
ilico
n
d
io
x
id
e
w
i
th
d
ielec
tr
ic
co
n
s
ta
n
t
K
ox
=3
.
9
h
as
b
ee
n
u
s
e
d
as
a
g
ate
o
x
id
e
m
ater
ial
f
o
r
d
ec
ad
es.
T
h
e
s
u
g
g
ested
m
o
d
el
s
tr
u
ctu
r
e
as
s
h
o
wn
in
Fi
g
u
r
e
2
(
b
)
w
h
ic
h
in
c
lu
d
es
g
ate
d
ielec
tr
ic
w
it
h
h
ig
h
-
K
v
alu
e
f
o
r
en
h
an
ci
n
g
th
e
p
er
f
o
r
m
an
ce
T
FT
d
ev
ices
b
y
u
s
i
n
g
n
o
v
el
n
a
n
o
co
m
p
o
s
ite
w
it
h
h
ig
h
d
ielec
tr
ic
co
n
s
tan
t
v
alu
e
K
ox
=2
5
.
Fig
u
r
e
2
(
a)
.
Sin
g
le
la
y
er
co
n
v
en
tio
n
al
g
ate
d
ielec
tr
ic
an
d
s
u
g
g
ested
o
f
g
ate
d
ielec
tr
i
c
T
F
T
s
,
C
o
n
v
en
tio
n
al
g
ate
d
ielec
tr
ic
o
x
id
e
Fig
u
r
e
2
(
b
)
.
Sin
g
le
la
y
er
co
n
v
en
tio
n
al
g
ate
d
ielec
tr
ic
an
d
s
u
g
g
ested
o
f
g
ate
d
ielec
tr
i
c
T
F
T
s
,
No
v
el
n
an
o
co
m
p
o
s
i
te
g
ate
d
ielec
tr
ic
T
h
e
s
u
g
g
e
s
ted
n
a
n
o
co
m
p
o
s
it
e
m
ater
ial
s
h
av
e
p
o
te
n
tial
ca
n
d
id
ates
f
o
r
u
s
in
g
i
n
a
w
id
e
r
an
g
e
o
f
ap
p
licatio
n
s
i
n
lo
w
co
s
t
d
u
e
t
o
lo
w
p
r
o
ce
s
s
te
m
p
er
atu
r
e
o
f
th
ese
d
e
v
ices
m
a
y
p
av
e
w
a
y
f
o
r
ac
h
ie
v
i
n
g
h
i
g
h
p
er
f
o
r
m
a
n
ce
f
o
r
T
FT
d
ev
ices.
I
n
s
er
ti
n
g
n
an
o
co
m
p
o
s
i
te
m
at
er
ials
b
et
w
ee
n
t
h
e
g
ate
a
n
d
S
/
D
co
n
tact
s
ar
e
v
er
y
ef
f
ec
tiv
e
in
r
ela
x
i
n
g
th
e
r
eq
u
i
r
e
m
en
t
s
o
n
th
e
v
ir
t
u
al
s
o
u
r
ce
v
elo
cit
y
.
L
a
n
t
h
a
n
u
m
o
x
id
e
L
a
2
O
3
b
len
d
ed
w
it
h
p
o
ly
v
i
n
y
l
p
h
en
o
l
P
VP
in
s
tea
d
o
f
s
ilico
n
d
io
x
id
e.
So
th
at,
h
o
m
o
g
e
n
eo
u
s
o
r
g
an
ic
-
i
n
o
r
g
a
n
ic
s
l
u
r
r
y
h
a
s
b
ee
n
o
b
tain
ed
,
1
0
w
t%
P
VP
an
d
L
a
2
O
3
n
a
n
o
p
ar
ticles,
to
i
n
tr
o
d
u
c
e
a
g
ate
d
ielec
tr
ic
n
a
n
o
co
m
p
o
s
ite
g
ate
w
it
h
h
i
g
h
-
k
d
ielec
tr
ic
co
n
s
tan
t
an
d
u
s
ed
in
t
h
e
s
u
g
g
e
s
ted
m
o
d
el.
A
cc
o
r
d
in
g
to
th
e
m
o
b
ilit
y
d
eg
r
ad
atio
n
is
o
n
e
o
f
t
h
e
m
aj
o
r
ch
allen
g
es
f
o
r
MO
SF
E
T
s
w
it
h
h
ig
h
-
K
g
ate
d
iele
ctr
ics,
th
is
m
o
d
e
l
MO
S
FET
s
w
it
h
P
VP
/L
a
2
O
3
d
ielec
tr
ic
f
il
m
h
as
b
ee
n
s
o
lv
e
d
th
is
p
r
o
b
lem
,
a
s
P
VP
w
h
ic
h
h
as
b
ee
n
e
n
h
a
n
ce
d
elec
tr
o
n
m
o
b
il
it
y
an
d
o
n
-
o
f
f
r
atio
s
.
2
.
2
.
Su
g
g
este
d L
o
w
-
K
G
a
t
e
Sid
ew
a
ll Spa
ce
r
M
o
del a
nd
Select
ed
Na
no
-
M
a
t
er
i
a
ls
E
s
ti
m
a
tio
n
o
f
elec
tr
o
n
ic
cir
cu
it
p
er
f
o
r
m
a
n
ce
is
n
ec
e
s
s
ar
y
i
n
t
h
e
d
esi
g
n
p
h
a
s
e
to
b
e
en
s
u
r
ed
p
r
o
p
er
r
eliab
ilit
y
.
T
h
u
s
,
f
r
i
n
g
i
n
g
ca
p
ac
itan
ce
is
o
n
e
o
f
t
h
e
m
aj
o
r
co
n
tr
ib
u
to
r
s
to
th
e
d
eg
r
ad
atio
n
p
er
f
o
r
m
an
ce
an
d
s
ig
n
al
i
n
te
g
r
it
y
p
r
o
b
le
m
s
i
n
s
u
b
-
100
-
n
m
c
ir
cu
it
s
.
Hen
ce
,
an
ac
cu
r
ate
s
u
g
g
e
s
ted
m
o
d
el
o
f
f
r
i
n
g
i
n
g
ca
p
ac
itan
ce
s
h
as
b
ee
n
in
v
es
ti
g
ated
to
e
n
h
a
n
ce
a
n
d
p
r
ed
ict
th
e
c
ir
cu
it
p
er
f
o
r
m
a
n
ce
b
e
f
o
r
e
f
ab
r
icatio
n
.
T
h
e
co
n
v
e
n
tio
n
al
g
ate
s
tr
u
c
tu
r
e
d
iag
r
a
m
o
f
t
h
e
T
F
T
d
ev
i
ce
s
u
n
d
er
s
tu
d
y
is
s
h
o
w
n
i
n
Fig
u
r
e
3
(
a)
in
th
is
s
tr
u
ct
u
r
e.
Sh
r
i
n
k
i
n
g
th
e
co
n
v
e
n
tio
n
a
l
MO
SF
E
T
b
ey
o
n
d
t
h
e
4
5
n
m
t
ec
h
n
o
lo
g
y
n
o
d
e
r
eq
u
ir
es
in
n
o
v
atio
n
s
to
s
u
p
p
r
es
s
p
ar
asit
ic
f
r
in
g
i
n
g
ca
p
ac
itan
ce
s
an
d
s
h
o
r
t
c
h
an
n
el
e
f
f
ec
t
s
.
T
h
u
s
,
th
e
s
u
g
g
e
s
ted
m
o
d
el
s
t
r
u
ctu
r
e
as
s
h
o
w
n
in
Fig
u
r
e
3
(
b
)
h
as
b
ee
n
in
clu
d
ed
g
ate
s
id
e
w
al
l
s
p
ac
er
v
alu
e
e
n
h
a
n
ce
s
t
h
e
g
ate
co
n
tr
o
l
o
f
s
h
o
r
t
-
c
h
an
n
el
ef
f
ec
t
s
SC
E
s
.
Fig
u
r
e
3
(
a)
.
A
s
i
n
g
le
la
y
er
co
n
v
en
t
io
n
al
a
n
d
s
u
g
g
e
s
ted
m
o
d
el
o
f
g
ate
s
p
ac
e
r
T
FT
s
,
C
o
n
v
en
tio
n
al
g
ate
d
ielec
tr
ic
s
p
ac
er
Fig
u
r
e
3
(
b
)
.
A
s
in
g
le
la
y
er
co
n
v
e
n
tio
n
al
an
d
s
u
g
g
e
s
ted
m
o
d
el
o
f
g
ate
s
p
ac
e
r
T
FT
s
,
No
v
el
n
an
o
co
m
p
o
s
i
te
g
ate
d
ielec
tr
ic
s
p
ac
er
Evaluation Warning : The document was created with Spire.PDF for Python.
IJ
AA
S
I
SS
N:
2252
-
8814
E
ffect
o
f No
ve
l Na
n
o
co
mp
o
s
ite
Ma
teri
a
ls
fo
r
E
n
h
a
n
cin
g
P
er
fo
r
ma
n
ce
o
f Th
in
F
ilm
… (
Yo
u
s
s
ef
Mo
b
a
r
a
k
)
5
A
l
s
o
,
r
ed
u
ce
s
th
e
s
o
u
r
ce
-
to
-
d
r
ain
lea
k
ag
e
c
u
r
r
en
t
a
n
d
e
n
h
a
n
ce
s
th
e
p
er
f
o
r
m
a
n
ce
T
FT
s
d
ev
ices
b
y
u
s
i
n
g
s
p
ac
er
w
it
h
lo
w
K
v
a
l
u
e
K
SP
=2
.
9
o
f
Sil
ico
n
d
io
x
id
e
b
len
d
ed
w
ith
P
o
ly
(
tetr
af
l
u
o
r
o
eth
y
len
e)
P
T
FE
in
s
tead
o
f
s
ilico
n
n
i
tr
id
e
i
n
th
e
s
id
e
w
al
l
s
p
ac
er
s
.
T
h
er
ef
o
r
e,
in
s
er
ti
n
g
n
a
n
o
co
m
p
o
s
ite
m
ate
r
ials
(
2
0
w
t%
S
iO
2
n
an
o
-
p
ar
ticle
s
a
n
d
P
T
FE)
b
et
w
ee
n
t
h
e
g
ate
a
n
d
S/D
co
n
tac
ts
i
s
e
f
f
ec
ti
v
e
i
n
r
ela
x
i
n
g
t
h
e
r
eq
u
ir
e
m
e
n
ts
o
n
th
e
v
ir
tu
a
l
s
o
u
r
ce
v
e
lo
cit
y
an
d
f
o
r
in
tr
o
d
u
ci
n
g
a
g
ate
d
ielec
tr
i
c
s
p
ac
er
w
it
h
lo
w
-
K
d
ielec
tr
ic
co
n
s
ta
n
t.
I
f
s
i
lico
n
d
io
x
id
e
co
n
ce
n
tr
atio
n
i
n
cr
ea
s
es
u
p
to
v
alu
e
o
f
2
0
w
t%,
it
m
a
y
b
e
r
es
u
lt
in
t
h
e
h
ig
h
er
l
ea
k
ag
e
c
u
r
r
en
t
also
s
tr
u
ct
u
r
e
d
ef
ec
ts
i
n
d
u
ce
d
b
y
t
h
e
p
r
esen
t o
f
h
i
g
h
co
n
ce
n
tr
atio
n
SiO
2
.
2
.
3
.
E
s
t
i
m
a
t
io
n o
f
F
ring
ing
-
Ca
pa
c
it
a
nce
a
nd
Su
rf
a
ce
P
o
t
ent
i
a
l o
f
L
o
w
-
K
G
a
t
e
Sid
ew
a
ll S
pa
ce
r
Fro
m
s
tu
d
ies
ca
s
e
s
o
f
MO
S
F
E
T
S
[
6
-
1
6
]
,
th
e
f
r
i
n
g
i
n
g
ca
p
ac
itan
ce
s
o
f
a
lo
w
-
K
g
ate
d
ie
lectr
ic
ar
e
s
h
o
w
n
in
F
ig
u
r
e
4
,
w
h
er
e
C
of
is
th
e
g
a
te
d
ielec
tr
ic
f
r
in
g
i
n
g
ca
p
ac
itan
ce
,
C
gf
i
s
th
e
g
ate
elec
tr
o
d
e
f
r
in
g
i
n
g
ca
p
ac
itan
ce
,
C
ox
is
t
h
e
g
ate
d
i
elec
tr
ic
ca
p
ac
itan
ce
b
et
w
ee
n
t
h
e
g
a
te
an
d
c
h
a
n
n
el,
T
ox
an
d
T
g
ar
e
th
e
p
h
y
s
ical
th
ic
k
n
e
s
s
o
f
t
h
e
g
ate
d
ielec
tr
ic
an
d
g
ate
elec
tr
o
d
e,
r
esp
ec
t
iv
el
y
,
L
an
d
L
a
ar
e
ch
an
n
el
l
en
g
t
h
an
d
d
is
ta
n
ce
b
et
w
ee
n
s
o
u
r
ce
/d
r
ain
elec
tr
o
d
e
an
d
g
ate
d
ielec
tr
ic
r
esp
ec
tiv
el
y
,
t
is
w
id
t
h
o
f
o
v
er
la
p
r
eg
io
n
b
et
w
ee
n
s
o
u
r
ce
/d
r
ain
an
d
g
ate
elec
tr
o
d
e,
O
is
th
e
o
r
ig
i
n
o
f
t
h
e
(
x
,
y
)
c
o
o
r
d
in
ate
s
y
s
te
m
.
Fig
u
r
e
4
.
Frin
g
in
g
ca
p
ac
itan
ce
s
f
o
r
MO
SF
E
T
2
.
4
.
E
s
t
i
m
a
t
io
n o
f
Su
rf
a
ce
P
o
t
ent
ia
l
T
h
e
f
ield
lin
es
ter
m
i
n
ate
at
th
e
s
u
r
f
ac
e
o
f
t
h
e
s
o
u
r
ce
/d
r
ain
r
eg
io
n
s
,
lead
in
g
to
an
in
cr
ea
s
e
o
f
th
e
g
at
e
elec
tr
o
d
e
f
r
in
g
in
g
-
ca
p
ac
itan
ce
.
Fo
r
a
g
iv
e
n
g
a
te
d
ielec
tr
ic
co
n
s
ta
n
t,
th
e
g
ate
d
ielec
tr
ic
f
r
in
g
i
n
g
-
ca
p
ac
ita
n
ce
in
cr
ea
s
es
w
it
h
th
e
d
ielec
tr
ic
co
n
s
ta
n
t
o
f
t
h
e
s
id
e
w
a
ll
s
p
ac
er
.
I
t
h
as
b
ee
n
t
h
at
d
eg
r
ad
ati
o
n
in
s
h
o
r
t
-
ch
a
n
n
el
p
er
f
o
r
m
a
n
ce
w
it
h
h
i
g
h
-
k
d
iel
ec
tr
ics
is
ca
u
s
ed
b
y
t
h
e
f
r
i
n
g
in
g
f
ield
s
f
r
o
m
,
b
ec
a
u
s
e
t
h
e
f
r
in
g
i
n
g
f
ield
s
ca
n
af
f
ec
t
th
e
elec
tr
ic
p
o
ten
tial
in
th
e
ch
a
n
n
el,
b
y
w
ea
k
en
i
n
g
th
e
g
ate
co
n
tr
o
l
[
2
]
.
W
h
en
V
ds
is
s
m
a
l
l,
V
d
V
s
=V
bi
.
W
h
er
e
V
s
an
d
V
d
ar
e
th
e
s
o
u
r
ce
an
d
d
r
ain
v
o
ltag
e
s
,
V
bi
is
b
u
ilt
-
i
n
p
o
ten
tial
o
f
t
h
e
s
o
u
r
ce
/s
u
b
s
tr
ate
an
d
d
r
ain
/s
u
b
s
tr
ate
j
u
n
ct
io
n
s
,
V
ds
is
t
h
e
p
o
ten
tial
d
if
f
er
en
ce
b
etw
ee
n
d
r
ain
an
d
s
o
u
r
ce
.
T
h
u
s
,
th
e
i
n
d
u
ce
d
c
h
ar
g
e
d
en
s
it
y
at
th
e
s
u
r
f
ac
e
o
f
s
o
u
r
ce
o
r
d
r
ain
r
eg
io
n
b
y
t
h
e
f
r
i
n
g
i
n
g
f
ield
li
n
es o
f
C
of
is
(
)
(
9
)
W
h
er
e
V
G
=V
g
–
V
fb
T
h
ese
ch
ar
g
es p
r
o
d
u
ce
an
elec
tr
ic
f
ield
in
t
h
e
ch
a
n
n
el,
an
d
t
h
e
r
elev
an
t s
u
r
f
ac
e
p
o
ten
tial is
[
7
]
.
(
)
(
(
)
(
)
(
)
(
)
)
(
1
0
)
Fo
r
th
e
s
a
m
e
r
ea
s
o
n
,
th
e
s
u
r
f
a
ce
p
o
ten
tial in
d
u
ce
d
b
y
C
g
f
ca
n
b
e
f
o
u
n
d
:
(
)
(
(
)
(
)
–
(
)
(
)
)
(
1
1
)
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8814
IJ
AA
S
Vo
l.
5
,
No
.
1
,
Ma
r
ch
201
6
:
1
–
12
6
W
h
er
e:
√
(
)
√
(
)
,
√
√
√
√
=
C
g
f
(
VG
–
Vb
i)
.
T
h
e
elec
tr
ic
p
o
ten
tial
o
f
s
h
o
r
t
ch
a
n
n
el
MO
S
FET
w
it
h
o
u
t
t
h
e
i
n
f
lu
e
n
ce
o
f
th
e
f
r
i
n
g
in
g
f
ield
s
w
as
d
er
iv
ed
to
b
e
[
1
1
]
:
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
1
2
)
W
h
er
e
(
)
is
th
e
elec
tr
ic
p
o
ten
tia
l o
f
lo
n
g
c
h
a
n
n
el
C
MO
S
;
√
(
1
3
)
C
MO
S;
is
a
ch
ar
ac
ter
i
s
tic
le
n
g
th
d
escr
ib
i
n
g
th
e
s
h
o
r
t
-
ch
a
n
n
el
ef
f
ec
t;
y
d
i
s
w
id
th
o
f
th
e
d
ep
letio
n
r
eg
io
n
i
n
th
e
s
u
b
s
tr
ate
[
1
1
]
.
C
o
n
s
id
er
in
g
th
e
in
f
l
u
e
n
ce
o
f
th
e
f
r
i
n
g
in
g
ca
p
ac
itan
ce
s
,
th
e
th
r
es
h
o
ld
v
o
ltag
e
V
th
is
d
ef
in
ed
as th
e
g
ate
v
o
lta
g
e
w
h
en
t
h
e
t
o
tal
s
u
r
f
ac
e
p
o
ten
tial a
t th
e
lo
ca
tio
n
o
f
m
in
i
m
u
m
s
u
r
f
ac
e
p
o
ten
tial (
x
0
)
(
)
(
)
(
)
(
1
4
)
W
h
er
e:
(
)
th
e
Fer
m
i
p
o
ten
tial
o
f
th
e
s
u
b
s
tr
ate,
w
h
e
n
V
ds
is
s
m
all,
x
0
L
/2
.
T
h
er
ef
o
r
e,
th
e
th
r
es
h
o
ld
v
o
ltag
e
ca
n
b
e
f
o
u
n
d
b
y
E
q
s
.
(
1
2
)
an
d
(
1
4
)
(
(
)
(
)
)
(
)
(
1
5
)
W
h
er
e,
Vth
o
r
ep
r
esen
ts
t
h
e
t
h
r
es
h
o
ld
v
o
lta
g
e
o
f
lo
n
g
ch
a
n
n
el
MO
SF
E
T
,
an
d
t
h
e
t
h
r
es
h
o
ld
v
o
lta
g
e
r
o
ll
-
o
f
f
in
cr
ea
s
es
w
i
th
K
SP
in
t
h
e
s
h
o
r
t
-
ch
a
n
n
el
r
eg
io
n
.
3.
RE
SU
L
T
S
A
ND
D
I
SCU
SS
I
O
N
T
h
is
p
ap
er
h
as
b
ee
n
d
is
cu
s
s
e
d
th
e
f
o
llo
w
i
n
g
ite
m
s
:
en
h
an
cin
g
T
FT
s
u
s
in
g
h
i
g
h
-
K
g
a
te
d
ielec
tr
ic
n
an
o
co
m
p
o
s
i
te
m
ater
ial,
e
n
h
a
n
cin
g
T
FT
s
u
s
in
g
lo
w
-
K
g
ate
s
p
ac
er
n
an
o
co
m
p
o
s
ite
m
a
ter
i
al,
an
d
f
in
a
ll
y
t
h
e
m
o
d
i
f
icat
io
n
o
f
e
n
h
a
n
ci
n
g
T
F
T
s
u
s
in
g
h
i
g
h
–
K
an
d
lo
w
-
K
g
ate
s
id
e
w
a
ll sp
ac
er
w
ith
n
a
n
o
co
m
p
o
s
i
te
m
ater
ial.
3
.
1
.
E
nh
a
nci
ng
T
F
T
s
us
ing
H
ig
h
-
K
G
a
t
e
Dielec
t
ric
Na
no
co
m
po
s
it
e
M
a
t
er
ia
l
Fig
u
r
e
5
a
n
d
6
ill
u
s
tr
ate
t
h
e
ef
f
ec
t
o
f
n
a
n
o
co
m
p
o
s
ite
g
ate
d
ielec
tr
ic
f
il
m
i
n
i
n
ter
n
al
f
r
i
n
g
e
ca
p
ac
itan
ce
C
botto
m
b
y
t
h
e
p
r
o
p
o
s
ed
m
o
d
el.
Fig
u
r
e
5
s
h
o
w
s
th
e
in
ter
n
al
f
r
in
g
e
ca
p
ac
ita
n
c
e
C
botto
m
v
er
s
u
s
t
h
e
g
ate
s
p
ac
er
d
ielec
tr
ic
p
er
m
i
tti
v
it
y
.
I
t
’
s
c
lear
ed
th
at
f
r
in
g
i
n
g
ca
p
ac
itan
ce
C
botto
m
in
cr
ea
s
es
w
it
h
in
s
er
ti
n
g
K
ox
b
y
Evaluation Warning : The document was created with Spire.PDF for Python.
IJ
AA
S
I
SS
N:
2252
-
8814
E
ffect
o
f No
ve
l Na
n
o
co
mp
o
s
ite
Ma
teri
a
ls
fo
r
E
n
h
a
n
cin
g
P
er
fo
r
ma
n
ce
o
f Th
in
F
ilm
… (
Yo
u
s
s
ef
Mo
b
a
r
a
k
)
7
a
n
o
v
e
l
n
an
o
co
m
p
o
s
ite
m
ater
i
al
h
i
g
h
er
t
h
an
co
n
v
en
t
io
n
al
g
a
te
d
ielec
tr
ic.
F
i
g
u
r
e
6
s
h
o
w
s
t
h
e
i
n
ter
n
a
l
f
r
in
g
i
n
g
ca
p
ac
itan
ce
as
a
f
u
n
ctio
n
o
f
n
o
r
m
al
ized
g
ate
len
g
t
h
f
o
r
a
n
o
v
el
an
d
co
n
v
e
n
tio
n
al
g
ate
d
iel
ec
tr
ics.
T
h
is
f
ig
u
r
e
illu
s
tr
ates
t
h
e
f
r
in
g
i
n
g
ca
p
ac
it
an
ce
C
b
otto
m
d
ec
r
ea
s
es
w
it
h
i
n
cr
ea
s
in
g
t
h
e
g
a
te
le
n
g
t
h
f
r
o
m
1
0
n
m
to
8
0
n
m
,
b
u
t
P
VP
/L
a
2
O
3
g
i
v
es
th
e
h
i
g
h
est
f
r
in
g
i
n
g
ca
p
ac
ita
n
ce
f
r
o
m
co
n
v
en
tio
n
al
g
ate
d
ielec
tr
ic
w
it
h
S
iO
2
,
at
g
iv
e
n
d
r
ai
n
b
ias V
D
=0
.
0
5
V.
Fig
u
r
e
5
.
E
f
f
ec
t o
f
g
ate
s
p
ac
er
d
ielec
tr
ic
co
n
s
tan
t o
n
in
ter
n
al
f
r
in
g
i
n
g
-
ca
p
ac
ita
n
ce
C
botto
m
u
s
in
g
P
VP
/L
a
2
O
3
an
d
SiO
2
g
ate
d
iel
ec
tr
ic
K
ox
Fig
u
r
e
6
E
f
f
ec
t o
f
g
ate
le
n
g
t
h
o
n
in
ter
n
al
f
r
i
n
g
in
g
-
ca
p
ac
itan
ce
C
botto
m
u
s
i
n
g
P
VP
/L
a
2
O
3
a
n
d
SiO
2
g
ate
d
ielec
tr
ic
K
ox
Fig
u
r
e
7
an
d
8
s
h
o
w
t
h
e
ef
f
e
ct
o
f
n
a
n
o
co
m
p
o
s
ite
h
i
g
h
-
K
g
ate
d
ielec
tr
ic
f
il
m
,
a
n
d
p
ar
asit
ic
in
ter
n
al
f
r
in
g
e
ca
p
a
cita
n
ce
o
n
t
h
e
s
u
r
f
ac
e
p
o
ten
tial.
Fig
u
r
e
7
s
h
o
w
s
th
e
in
f
l
u
e
n
ce
o
f
h
ig
h
-
K
d
iele
ctr
ics
a
n
d
s
id
e
w
all
s
p
ac
er
s
o
n
g
ate
s
u
r
f
ac
e
p
o
te
n
tial,
it
’
s
n
o
ticed
t
h
at
n
o
v
e
l
n
a
n
o
co
m
p
o
s
ite
g
ate
d
ielec
tr
ic
g
iv
es
h
i
g
h
er
s
u
r
f
ac
e
p
o
ten
tial
t
h
an
co
n
v
en
t
io
n
al
g
ate
d
ielec
tr
ic
co
n
s
tan
t
w
it
h
i
n
cr
ea
s
i
n
g
g
ate
s
p
ac
er
d
ielec
t
r
ic
co
n
s
ta
n
t.
Fi
g
.
8
s
h
o
w
s
t
h
e
ca
lc
u
lated
s
u
r
f
ac
e
p
o
ten
tial
v
ar
iatio
n
alo
n
g
th
e
c
h
an
n
el
f
o
r
K
ox
=2
5
w
it
h
an
d
with
o
u
t
t
h
e
e
f
f
ec
t
o
f
th
e
f
r
in
g
e
ca
p
ac
itan
ce
.
F
ig
u
r
e
1
0
s
h
o
w
s
th
e
e
f
f
ec
t
o
f
n
a
n
o
co
m
p
o
s
ite
g
ate
d
ielec
tr
ic
f
i
l
m
o
n
t
h
e
t
h
r
esh
o
ld
v
o
ltag
e.
T
h
e
n
o
v
el
n
an
o
co
m
p
o
s
ite
m
ater
ial
o
f
P
VP
/L
a
2
O
3
h
as
lo
w
t
h
r
es
h
o
ld
v
o
lta
g
e
a
s
co
m
p
ar
ed
to
t
h
o
s
e
w
it
h
co
n
v
en
t
io
n
al
SiO
2
o
f
th
e
s
a
m
e
w
id
t
h
.
R
elate
d
to
h
i
g
h
o
f
p
er
m
it
tiv
it
y
o
f
n
a
n
o
co
m
p
o
s
ite
m
ater
ial
s
,
t
h
e
f
r
in
g
i
n
g
g
ate
ca
p
ac
itan
ce
s
C
b
ottom
m
u
c
h
h
ig
h
i
n
T
FT
d
ev
ices
an
d
s
o
,
h
i
g
h
p
er
m
itti
v
it
y
o
f
n
a
n
o
co
m
p
o
s
it
e
m
ater
ial
i
n
cr
ea
s
es
t
h
e
s
u
r
f
ac
e
p
o
ten
tial
as
a
r
esu
lt
o
f
t
h
e
i
n
d
u
ce
d
ch
ar
g
e
s
in
t
h
e
d
r
ain
an
d
s
o
u
r
ce
r
eg
io
n
s
d
u
e
to
f
r
in
g
in
g
f
ield
lin
e
s
f
r
o
m
th
e
b
o
tto
m
o
f
t
h
e
g
ate
elec
tr
o
d
e.
Fig
u
r
e
9
ex
p
lain
s
t
h
at
t
h
e
n
o
v
el
n
a
n
o
co
m
p
o
s
ite
m
ater
ial
P
VP
/L
a
2
O
3
h
a
s
le
s
s
t
h
r
es
h
o
ld
v
o
lta
g
e
as
co
m
p
ar
ed
w
ith
co
n
v
en
t
io
n
al
SiO
2
o
f
t
h
e
s
a
m
e
w
id
th
.
As
a
r
esu
lt
o
f
h
i
g
h
p
er
m
itt
iv
it
y
o
f
n
an
o
co
m
p
o
s
i
te
m
ater
ia
ls
,
t
h
e
f
r
in
g
i
n
g
g
ate
ca
p
ac
ita
n
ce
s
C
bo
ttom
h
a
v
e
m
u
c
h
h
ig
h
in
T
FT
d
ev
ices.
So
,
h
ig
h
p
er
m
itti
v
it
y
o
f
n
a
n
o
co
m
p
o
s
ite
m
ater
ial
i
n
cr
ea
s
es
t
h
e
s
u
r
f
ac
e
p
o
ten
tial
o
f
th
e
in
d
u
ce
d
c
h
ar
g
es
in
t
h
e
d
r
ain
an
d
s
o
u
r
ce
r
eg
io
n
s
d
u
e
to
f
r
in
g
i
n
g
f
ield
li
n
es
f
r
o
m
t
h
e
b
o
tto
m
o
f
th
e
g
at
e
elec
tr
o
d
e.
T
h
e
d
r
o
p
in
th
e
th
r
esh
o
ld
v
o
ltag
e
i
s
as
h
i
g
h
as
ab
o
u
t
2
5
m
V
f
o
r
L
g
=6
0
n
m
as
ε
o
x
in
cr
ea
s
es
f
r
o
m
3
.
9
to
2
5
.
A
ll th
ese
r
es
u
lt
s
ar
e
ea
r
ly
o
n
s
et
o
f
in
v
er
s
io
n
th
e
c
h
an
n
el
an
d
h
en
ce
lo
w
er
t
h
r
es
h
o
ld
v
o
ltag
e.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8814
IJ
AA
S
Vo
l.
5
,
No
.
1
,
Ma
r
ch
201
6
:
1
–
12
8
Fig
u
r
e
7.
E
f
f
ec
t o
f
g
ate
s
p
ac
er
d
ielec
tr
ic
o
f
n
an
o
co
m
p
o
s
ite
h
ig
h
-
K
g
ate
d
ielec
tr
ic
f
il
m
,
a
n
d
p
ar
asit
ic
in
ter
n
al
f
r
in
g
i
n
g
ca
p
ac
ita
n
ce
o
n
t
h
e
s
u
r
f
ac
e
p
o
ten
tial
f
o
r
d
ev
ices
w
it
h
SiO
2
a
n
d
h
i
g
h
K
ox
P
VP
/L
a
2
O
3
g
ate
d
ielec
tr
ic
m
ater
ial.
Fig
u
r
e
8
.
E
f
f
ec
t o
f
d
is
tan
ce
al
o
n
g
c
h
an
n
el
o
f
n
an
o
co
m
p
o
s
i
te
h
ig
h
-
K
g
a
te
d
ielec
tr
ic
f
il
m
,
a
n
d
p
ar
asit
ic
in
ter
n
al
f
r
i
n
g
in
g
ca
p
ac
itan
ce
o
n
t
h
e
s
u
r
f
ac
e
p
o
ten
tia
l f
o
r
d
ev
ices
w
it
h
SiO
2
an
d
h
i
g
h
K
ox
P
VP
/L
a
2
O
3
g
ate
d
ielec
tr
ic
m
ater
ial.
Fig
u
r
e
9
.
I
n
f
l
u
en
ce
o
f
K
ox
v
a
l
u
e
o
f
g
a
te
d
ielec
tr
ic
f
il
m
o
n
t
h
e
th
r
esh
o
ld
v
o
lta
g
e
o
f
T
FT
3
.
2
.
E
nh
a
nci
ng
T
F
T
s
us
ing
L
o
w
-
K
G
a
t
e
Sp
a
ce
r
Na
no
co
m
po
s
it
e
M
a
t
er
ia
l
Fig
u
r
e
1
0
an
d
1
1
illu
s
tr
ate
th
at
th
e
ef
f
ec
t
o
f
n
a
n
o
co
m
p
o
s
it
e
s
id
e
w
al
l
s
p
ac
er
d
ielec
tr
ic
f
i
l
m
g
a
te
in
elec
tr
o
d
e
f
r
in
g
in
g
ca
p
ac
ita
n
ce
C
gf
.
T
h
e
s
u
g
g
ested
m
o
d
el
i
n
d
icate
s
t
h
at
t
h
e
elec
tr
o
d
e
f
r
in
g
i
n
g
ca
p
ac
ita
n
ce
C
gf
d
ec
r
ea
s
es
w
it
h
i
n
cr
ea
s
i
n
g
T
ox
d
u
e
to
in
cr
ea
s
in
g
d
is
ta
n
ce
b
etw
ee
n
th
e
t
w
o
p
lates
o
f
C
gf
.
I
t
is
clea
r
ed
th
at,
th
e
ca
lcu
lated
r
esu
lts
o
f
th
e
elec
t
r
o
d
e
f
r
in
g
i
n
g
ca
p
ac
ita
n
ce
C
gf
f
o
r
n
o
v
el
s
u
g
g
e
s
ted
n
a
n
o
co
m
p
o
s
ite
m
ater
ial
o
f
s
id
e
-
w
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
g
a
te
P
T
FE/SiO
2
h
as
lo
w
er
th
an
th
e
co
n
v
e
n
tio
n
al
s
id
e
-
wall
s
p
ac
er
d
ielec
tr
ic
f
il
m
g
ate
S
i
3
N
4
s
p
ac
er
K
sp
as
s
h
o
w
n
i
n
Fi
g
u
r
e
1
0
.
I
n
ca
s
e
o
f
Fig
.
1
1
,
th
e
v
ar
iatio
n
o
f
th
e
g
ate
elec
tr
o
d
e
f
r
in
g
i
n
g
-
ca
p
ac
ita
n
ce
h
a
s
b
ee
n
s
h
o
w
n
w
i
th
v
ar
y
i
n
g
g
ate
th
ic
k
n
e
s
s
.
Fo
r
a
g
i
v
e
n
E
O
T
an
d
K
ox
,
th
e
g
ate
elec
tr
o
d
e
f
r
in
g
in
g
-
ca
p
ac
itan
ce
in
cr
ea
s
e
s
w
it
h
T
g
.
Als
o
,
it
is
c
lear
ed
th
at,
t
h
e
ca
lc
u
lated
r
es
u
lts
o
f
t
h
e
elec
tr
o
d
e
f
r
in
g
i
n
g
ca
p
ac
itan
ce
C
gf
f
o
r
n
o
v
el
s
u
g
g
e
s
ted
n
a
n
o
co
m
p
o
s
it
e
m
ater
ial
o
f
s
id
e
-
w
all
s
p
ac
er
d
ie
lectr
ic
f
il
m
g
at
e
Evaluation Warning : The document was created with Spire.PDF for Python.
IJ
AA
S
I
SS
N:
2252
-
8814
E
ffect
o
f No
ve
l Na
n
o
co
mp
o
s
ite
Ma
teri
a
ls
fo
r
E
n
h
a
n
cin
g
P
er
fo
r
ma
n
ce
o
f Th
in
F
ilm
… (
Yo
u
s
s
ef
Mo
b
a
r
a
k
)
9
PT
FE/SiO
2
h
a
s
lo
w
er
th
a
n
t
h
e
co
n
v
e
n
tio
n
al
s
id
e
-
w
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
g
ate
Si
3
N
4
s
p
a
ce
r
K
sp
j
n
s
h
o
w
n
i
n
Fig
u
r
e
1
1
.
I
n
ca
s
e
o
f
Fi
g
u
r
e
1
2
,
th
e
ef
f
ec
t
o
f
n
an
o
co
m
p
o
s
it
e
s
id
e
w
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
h
as
b
ee
n
s
h
o
wn
o
n
th
e
g
a
te
d
ielec
tr
ic
f
r
i
n
g
i
n
g
-
ca
p
ac
itan
ce
C
of
.
I
t
i
s
n
o
tices
t
h
at
t
h
e
g
ate
d
ielec
tr
ic
f
r
i
n
g
in
g
-
ca
p
ac
itan
ce
C
of
b
y
u
s
i
n
g
n
o
v
el
n
a
n
o
co
m
p
o
s
ite
s
u
g
g
e
s
ted
m
ater
ial
P
T
FE/Si
O
2
is
lo
w
er
th
a
n
th
e
g
ate
d
ielec
tr
ic
f
r
i
n
g
i
n
g
-
ca
p
ac
itan
ce
C
of
w
it
h
co
n
v
en
ti
o
n
al
Si
3
N
4
,
th
is
m
ea
n
s
t
h
at
th
e
f
ield
li
n
es
f
r
o
m
t
h
e
b
o
tto
m
o
f
th
e
g
ate
elec
tr
o
d
e
ca
n
ea
s
il
y
g
o
th
r
o
u
g
h
t
h
e
i
n
t
er
f
ac
e
b
et
w
ee
n
t
h
e
g
ate
d
iele
ctr
ic
an
d
s
id
e
w
all
s
p
ac
er
.
Fi
g
u
r
e
1
3
s
h
o
w
s
t
h
e
th
r
es
h
o
ld
v
o
lta
g
e
r
o
ll
-
o
f
f
(
V
rol
l
-
off
=
V
th
–
V
tho
)
f
o
r
d
i
f
f
er
en
t
K
sp
v
al
u
e
s
o
f
s
id
e
w
all
s
p
ac
er
.
I
n
ca
s
e
o
f
Fig
1
3
,
it
h
as
b
ee
n
d
ep
icted
th
at
th
e
ef
f
e
ct
o
f
n
an
o
co
m
p
o
s
i
te
s
id
e
w
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
o
n
t
h
e
t
h
r
es
h
o
ld
v
o
lta
g
e
o
f
MO
SF
E
T
d
eg
r
ad
atio
n
in
s
h
o
r
t
-
c
h
an
n
el
p
er
f
o
r
m
a
n
ce
ass
o
ci
ated
w
i
t
h
h
i
g
h
-
K
sp
d
ielec
tr
ics.
T
h
u
s
,
it
is
clea
r
ed
th
at
r
ep
lace
m
e
n
t
o
f
Si3
N4
with
P
T
FE/SiO
2
lead
s
to
a
s
i
g
n
i
f
ican
t
d
eg
r
ad
atio
n
o
f
th
e
t
h
r
esh
o
ld
v
o
lta
g
e
o
f
MO
SF
E
T
.
Fig
u
r
e
10.
E
f
f
ec
t o
f
Gate
o
x
id
e
th
ick
n
e
s
s
T
ox
o
f
n
an
o
co
m
p
o
s
ite
s
id
e
-
w
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
g
ate
i
n
elec
tr
o
d
e
f
r
in
g
i
n
g
ca
p
ac
itan
ce
C
gf
u
s
in
g
P
T
FE/SiO
2
an
d
Si
3
N
4
s
p
ac
er
K
sp
Fig
u
r
e1
1
.
E
f
f
ec
t o
f
Ga
te
elec
tr
o
d
e
th
ick
n
e
s
s
T
g
o
f
n
a
n
o
co
m
p
o
s
ite
s
id
e
-
w
a
ll sp
ac
er
d
ielec
tr
ic
f
il
m
g
ate
in
elec
tr
o
d
e
f
r
in
g
in
g
ca
p
ac
itan
ce
C
gf
u
s
in
g
P
T
FE/SiO
2
an
d
Si
3
N
4
s
p
ac
er
K
sp
Fig
u
r
e
1
2
.
E
f
f
ec
t o
f
g
ate
o
x
id
e
th
ick
n
e
s
s
T
ox
in
g
ate
d
ielec
tr
i
c
f
r
in
g
i
n
g
-
ca
p
ac
ita
n
ce
C
of
w
i
t
h
PT
FE/SiO
2
an
d
Si
3
N
4
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8814
IJ
AA
S
Vo
l.
5
,
No
.
1
,
Ma
r
ch
201
6
:
1
–
12
10
Fig
u
r
e
13
.
I
n
f
lu
e
n
ce
o
f
K
sp
v
al
u
e
o
f
s
id
e
w
all
s
p
ac
er
o
n
th
e
t
h
r
esh
o
ld
v
o
ltag
e
o
f
MO
S
FET
3
.
3
.
M
o
difica
t
io
n
o
f
E
nh
a
ncin
g
T
F
T
s
us
ing
H
ig
h
–
K
a
nd
L
o
w
-
K
G
a
t
e
Sid
ew
a
ll
Sp
a
ce
r
w
it
h
Na
no
co
m
po
s
it
e
M
a
t
er
ia
ls
Fig
u
r
e
1
4
s
h
o
w
s
t
h
e
ef
f
ec
t
o
f
b
o
th
n
o
v
el
n
an
o
co
m
p
o
s
i
te
g
ate
an
d
s
p
ac
er
d
ielec
tr
ic
f
ilm
in
in
ter
n
al
f
r
in
g
e
ca
p
ac
itan
ce
C
botto
m
.
Fi
g
u
r
e
1
4
s
h
o
w
s
th
e
v
ar
iatio
n
o
f
in
ter
n
al
f
r
in
g
i
n
g
ca
p
ac
itan
c
e
as
a
f
u
n
ctio
n
o
f
n
o
r
m
alize
d
g
ate
le
n
g
t
h
f
o
r
b
o
th
n
o
v
el
n
a
n
o
co
m
p
o
s
ite
g
a
t
e
d
ielec
tr
ic
K
ox
P
VP
/L
a
2
O
3
an
d
g
ate
s
p
ac
er
K
sp
PT
FE/SiO
2
,
w
it
h
co
n
v
en
t
io
n
al
g
ate
d
ielec
tr
ics
an
d
g
ate
s
id
ew
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
.
T
h
is
f
i
g
u
r
e
s
h
o
w
s
t
h
e
f
r
in
g
i
n
g
ca
p
ac
ita
n
ce
C
botto
m
d
ec
r
ea
s
es
w
i
th
in
cr
ea
s
in
g
th
e
g
a
te
len
g
t
h
b
u
t
t
h
e
u
s
i
n
g
o
f
n
o
v
el
n
a
n
o
co
m
p
o
s
ite
s
g
iv
e
t
h
e
h
ig
h
e
s
t b
o
tto
m
f
r
i
n
g
i
n
g
ca
p
ac
ita
n
ce
o
v
er
co
n
v
en
tio
n
al
m
a
ter
ials
.
Fig
u
r
e
14
.
E
f
f
ec
t o
f
g
ate
le
n
g
t
h
L
g
on
in
ter
n
al
f
r
in
g
i
n
g
-
ca
p
a
citan
ce
C
b
otto
m
u
s
i
n
g
n
o
v
el
n
an
o
co
m
p
o
s
i
te
P
VP
/L
a
2
O
3
as
g
ate
d
ielec
tr
ic
K
ox
an
d
P
T
FE/SiO
2
g
ate
s
id
e
w
all
s
p
ac
er
d
ielec
tr
ic
f
il
m
K
sp
Fig
u
r
e
15
.
I
n
f
lu
e
n
ce
o
f
n
o
v
el
n
an
o
co
m
p
o
s
i
te
K
ox
an
d
K
sp
o
n
th
e
th
r
es
h
o
ld
v
o
lta
g
e
o
f
MO
S
FET
Evaluation Warning : The document was created with Spire.PDF for Python.