Int
ern
at
i
onal
Journ
al of Ele
ctrica
l
an
d
Co
mput
er
En
gin
eeri
ng
(IJ
E
C
E)
Vo
l.
10
,
No.
3
,
June
2020,
pp. 2
918~
2925
IS
S
N: 20
88
-
8708
,
DOI: 10
.11
591/
ijece
.
v10
i
3
.
pp291
8
-
29
25
2918
Journ
al h
om
e
page
:
http:
//
ij
ece.i
aesc
or
e.c
om/i
nd
ex
.ph
p/IJ
ECE
Des
i
gn m
odern
structur
e for het
erojunct
ion qu
antum
dot solar
cells
A.
Th
ab
e
t
1
, S.
Abdel
hady
2
,
Y
oussef
M
oba
rak
3
1
El
e
ct
ri
ca
l
Eng
in
ee
ring
Depa
r
tment,
Co
ll
eg
e
of
E
ngine
er
ing, Qassim
Univer
sit
y
,
K
ingdom of
S
audi
A
rab
ia
3
El
e
ct
ri
ca
l
Eng
in
ee
ring
Depa
r
tment,
Fa
cul
t
y
of En
gine
er
ing,
Kin
g
Abdulaz
i
z
Univ
e
rsit
y
,
K
ingdom o
f
S
audi
A
r
abi
a
1,2,3
Nanote
chno
l
og
y
Resea
r
ch
C
e
nte
r, Fac
u
lty
of
Ene
rg
y
Engi
n
ee
r
ing,
As
wan
Univ
ersity
,
Eg
y
pt
Art
ic
le
In
f
o
ABSTR
A
CT
Art
ic
le
history:
Re
cei
ved
Ma
r 25
, 201
9
Re
vised
Dec
5
,
2019
Accep
te
d
Dec
13, 201
9
Thi
s
pape
r
pro
posal
new
struct
ure
for
impro
ving
the
optica
l,
elec
tri
c
al
cha
ra
cteri
sti
cs
and
eff
ic
i
ency
of
3
rd
gene
rat
ion
het
ero
junc
t
ion
quant
um
dot
solar
ce
l
l
(HJ
QDSC)
(IT
O/CdS
/QDP
bS/Au)
m
o
del
b
y
using
the
quant
um
dot
window
lay
er
in
stea
d
of
bulk
struct
ure
l
a
y
ers
cel
l.
Also,
thi
s
pap
er
pre
sents
the
ore
ti
c
al
l
y
an
aly
s
is
for
the
per
form
anc
e
of
the
proposal
HJ
QDSC
(IT
O/QD
CdS
/Q
DP
bS/Au)
structure.
Th
e
new
design
struct
ure
was
appl
ied
on
tra
d
it
ion
al
(S
nO2/CdS
/CdT
e/Cu) a
nd
(
ZnO/C
dS/CIGS
/Mo)
thi
n
f
il
m
sola
r
ce
l
ls
which
b
ase
d
on
sub
-
m
ic
ro
a
bsorber
lay
e
r
th
i
ckne
ss
m
odel
s
b
y
r
eplac
ing
the
bulk
CdTe,
CIGS
absorbe
r
l
a
y
ers
and
CdS
window
lay
e
r
with
quant
um
dot
size
m
at
er
i
al
s
to
ac
h
ie
ve
highe
r
eff
i
cienc
y
with
l
esser
usage
lay
e
r
m
at
eri
a
l.
Also,
i
t
has
bee
n
studi
ed
the
e
ffe
c
t
of
using
sem
ic
onduct
ors
lay
e
rs
in
quant
um
dots
size
on
elec
tr
ic
a
nd
opti
cal
prope
rti
es
of
thi
n
fi
lm
solar
ce
l
ls
and
the
eff
e
ct
of
window
and
absorbe
r
lay
e
r
s
quant
um
dots
rad
ii
on
the
per
form
an
ce
of
solar
cells.
Fi
nal
l
y
,
a
th
ermal
eff
ici
ency
anal
y
s
is
has
bee
n
inve
stigated
for explaining the
i
m
porta
nce
o
f
ne
w struc
ture HJQ
D sola
r cells.
Ke
yw
or
d
s
:
Ab
s
orbe
r
Energy c
onve
r
sion
Heter
ojuncti
on
Qu
a
ntu
m
d
ot
So
la
r
cell
Copyright
©
202
0
Instit
ut
e
o
f Ad
vanc
ed
Engi
n
ee
r
ing
and
S
cienc
e
.
Al
l
right
s reserv
ed
.
Corres
pond
in
g
Aut
h
or
:
Safaa
A
bd
el
ha
dy,
Dep
a
rt
m
ent o
f El
ect
rical
En
gi
neer
i
ng,
Asw
a
n U
niv
e
r
sit
y,
Saha
ry Roa
d,
Asw
a
n
8152
8,
Egypt.
Em
a
il
: eng
safa
a33@
gm
ail.co
m
1.
INTROD
U
CTION
Seve
ral
so
la
r
te
chnolo
gies
in
cl
ud
in
g
wa
fer,
thin
fil
m
and
orga
nic,
ha
v
e
been
r
esearc
he
d
to
achieve
reli
abili
ty
,
cost
-
ef
fecti
ven
e
ss
and
high
ef
fici
ency.
Cost
ef
fe
ct
iveness
ca
n
be
seen
in
the
use
of
le
ss
m
at
e
rial
as
well
as
increas
ing
e
nergy
co
nversi
on
e
ff
ic
ie
ncy.
The
re
du
c
ti
on
in
the
e
ff
i
ci
encies
of
t
he
pr
e
vious
m
od
e
ls
du
e
to
the
reducti
on
of
abs
orber
la
ye
rs
th
ic
kn
ess
ar
e
associat
ed
wit
h
a
nu
m
ber
of
pro
blem
s
[1
-
3].
The
3
rd
ge
ner
at
ion
of
s
olar
cel
ls
te
chn
iq
ue
ba
sed
on
novel
a
bs
or
ber
la
ye
r
m
at
erial
s
with
tun
a
ble
ba
ndga
p
that
can
be
tu
ned
t
o
m
a
tc
h
the
sp
ect
ral
distribu
ti
on
of
s
o
la
r
sp
e
ct
ru
m
are
cru
ci
al
and
achieve
d
le
ss
con
s
umm
at
ion
abs
orber
la
ye
r
m
at
erial
.
Qu
an
tum
do
ts
hav
e
the
m
eri
t
of
tu
nab
le
band
gap
as
a
resu
lt
of
siz
e
var
ia
ti
on
as
well
as
f
or
m
at
ion
of
inte
rm
ediat
e
bands
.
T
he
e
ne
rg
y
ba
nd
ga
p
increa
ses
with
a
decr
ease
in
siz
e
of
the
qua
ntu
m
do
t,
the
a
dju
st
able
ba
ndga
p
of
quant
um
dots
al
lows
the
c
on
st
ru
ct
io
n
of
nanostr
uctu
re
d
so
la
r
cel
l
that
is
able
to
harvest
m
ore
of
t
he
s
olar
s
pectr
um
[4
]
.
Q
uan
t
um
do
ts
c
an
ge
ner
at
e
m
ulti
ple
excit
on
(elect
ron
-
hole
pairs
)
after co
ll
isi
on
with on
e ph
oton of en
e
rg
y ex
ceedin
g
the b
a
nd
gap. Abs
orption
of
UV
photons in
qua
ntu
m
d
ot
s
pro
du
ces
m
or
e
el
ect
ro
ns
tha
n
near
inf
rar
e
d
photons
.
Q
ua
nt
um
do
ts
em
it
up
to
th
ree
el
e
ct
rons
per
phot
on
due
to
m
ulti
ple
e
xciton
gen
e
rat
ion
as
op
po
se
d
to
only
one
fo
r
sta
nd
a
r
d
cryst
al
li
ne
si
li
con
so
la
r
ce
ll
[5
]
.
The
previ
ou
s
stud
y
for
he
te
rojuncti
on
so
la
r
cel
ls
based
on
PbS
-
QD
s/C
dS
thin
fil
m
s
dem
on
strat
in
g
an
ac
hieve
d
e
ffi
ci
ency of 3.3
% [6]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Desig
n moder
n st
ru
ct
ure
for
het
eroju
nction q
uantum
dot s
ola
r cell
s (
A.
Thab
et
)
2919
This
pap
e
r
proposal
new
str
uctu
re
f
or
pre
vious
heter
ojuncti
on
qua
ntum
do
t
ITO
/C
dS/
Q
D
PbS/
A
u
thin
film
so
la
r
cel
l
m
od
el
to
im
pr
ov
e
the
e
ffi
ci
ency
of
the
m
od
el
by
us
in
g
the quan
t
um
do
t
a
bsor
ber
la
ye
r
an
d
rep
la
ce
d
the
bulk
C
dS
wind
ow
la
ye
r
with
quant
um
do
t
CdS
la
ye
r.
It
has
been
ap
plied
the
ne
w
str
uctu
re
m
od
el
on
t
he
pr
e
vious
SnO
2
/C
dS
/C
dTe/
C
u
an
d
Z
nO/C
dS
/C
I
GS
/M
o
thin
fil
m
m
od
el
s
w
hich
ba
sed
on
su
b
-
m
ic
ro
abs
orber
la
ye
r
th
ic
kn
ess
to
im
pro
ve
the
perform
ance
an
d
eff
ic
ie
nc
y
of
the
cel
ls
to
save
the
co
nsum
pti
on
in
t
he
a
bsor
ber
la
ye
r
m
at
er
ia
l.
The
e
ff
ect
o
f
wi
ndow
a
nd
abs
orbe
r
la
ye
r
s’
qu
a
ntu
m
do
t
s
ra
dii
on
t
he
pe
rfor
m
ance
of
the
sel
ect
ed
cel
ls.
A
com
par
at
ive
stud
y
is
do
ne
f
or
sp
eci
fyi
ng
the
best
siz
e
of
window
and
abs
orbe
r
l
ay
er
m
at
eria
ls
to
achie
ve
hig
he
r
e
ff
ic
ie
nc
y
with
le
sser
us
a
ge
sem
ic
on
du
ct
or
m
at
erial
s
an
d
le
sser pr
oduction co
st an
d
ti
m
e.
2.
M
AT
HEM
AT
ICA
L
MODE
LS OF
PR
OP
OSA
L
H
JQD
THIN
FILM
SOLA
R CEL
LS
Con
si
der
i
ng
s
ph
e
rical
sh
a
pe
of
nanostr
uct
ur
e
la
ye
r
m
ater
ia
l
in
thin
f
ilm
so
la
r
cel
l,
base
d
on
the
m
od
el
de
ve
lop
e
d
by
Lo
ui
s
Brus
f
or
c
ol
loidal
qua
ntu
m
dots.
T
he
e
ne
rg
y
band
ga
p
of
quant
um
dot
la
ye
r
m
at
erial
can
be
ap
pro
xim
ated
by
1
,
an
d
that
band
gap
energy
value
s
increase
as
the
quant
um
dot
siz
e d
ecre
ases
[7
]
.
(
)
=
+
2
ℎ
2
2
2
(
1
+
1
ℎ
)
−
1
.
8
2
4
(1)
w
he
re
:
R
is
ra
diu
s
of
qu
a
ntum
do
t
la
ye
r
m
at
erial
,
m
eb
,
m
hb
are
the
ef
fe
ct
ive
m
ass
of
el
ect
ro
n
an
d
hole
f
or
la
ye
r
m
at
eria
l,
Q
is
the
el
e
m
entary
charg
e,
ε
0
is
the
pe
rm
i
tt
ivity
of
f
r
ee
sp
ace
,
an
d
h
is
Plan
k
c
onsta
nt
.
The
e
nergy
ba
ndga
p
value
of
t
he
bu
l
k
la
ye
r
m
a
te
rial
cal
culat
ed
us
in
g
Var
s
hni
relat
ion
te
m
per
at
ur
e
dep
e
ndence
of
the
ba
ndga
p
in
sem
ic
on
du
ct
or
s
w
hich
us
in
g
in
ab
so
r
be
r
or
wi
ndow
la
ye
r
can
be
descr
i
bed as
[8
-
10]
.
=
(
0
)
−
2
(2)
w
he
re,
E
g
(
0)
is
energy
band
ga
p
of
sem
ic
ondu
ct
or
m
a
te
rial
at
zero
te
m
per
at
ur
e
,
an
d
are
c
on
sta
nts,
ε
b
is
diele
ct
ric
con
s
ta
nt
of
the
se
m
ic
on
duct
or
la
ye
r
m
at
erial
wh
ic
h
ca
n
be
descr
ibe
d
by
us
ing
the
Drude
m
od
el
[
11
-
12
]
as foll
ows:
=
∞
(
1
−
2
2
+
(
)
)
(3)
w
he
re,
is
ang
ula
r
fr
e
quenc
y
of
li
gh
t,
0
i
s
the
plasm
a
a
ngular
fr
e
qu
e
nc
y
of
sem
ic
on
du
ct
or
la
ye
r
m
at
erial
,
mb
is
the
da
m
pin
g
fr
e
qu
e
ncy
of
s
em
ico
nd
ucto
r
la
ye
r
m
at
erial
.
What
ever
,
ε
b∞
is
t
he
infi
nity
diele
ct
ric
const
ant
of sem
ic
ondu
ct
or lay
er m
at
erial
s tha
t can
be d
et
er
m
ined
as
fo
ll
ows:
∞
=
(
1
+
2
(
)
2
)
(4)
Also
,
G
QD
is
the
el
ect
ro
n
–
hol
e
pair
gen
e
rati
on
rate
in
the
quant
um
do
t
abso
r
be
r
la
ye
r
can
be
w
ritt
en
with the
aid
of
the foll
owin
g
[
13
]
:
(
λ
)
=
(
)
−
(
)
[
1
−
(
)
]
(
)
ℎ
(5)
w
he
re,
is
t
he
ph
oton
wa
vel
eng
t
h,
is
t
he
a
bs
orpti
on
c
oe
ff
ic
ie
nt
an
d
t
hick
ness
of
th
e
thi
n
t
op
sem
ic
on
duct
or
la
ye
r
(n
-
la
ye
r
CdS),
is
the
a
bs
or
ption
coe
f
fici
en
t
of
the
a
bs
or
ber
la
ye
r
(
CdTe,
GIGS
or
Pb
S
),
(
)
is
re
flec
ti
on
of
fron
t
la
ye
r
m
at
erial
(S
nO
2
,
Z
nO
or
I
TO),
a
nd
(
)
is
t
he
inten
sit
y
of
t
he
s
olar
sp
ect
ral,
is
th
e
spe
ed
of
li
ght.
T
he
a
bsor
ption
c
oeffici
ent
of
the
a
bs
or
ber
an
d
wi
ndow
qua
nt
um
do
ts
la
ye
r
s
(
(
)
)
can
be
cal
c
ul
at
ed
ba
sed
on t
he
Be
er
-
Lam
ber
t’s la
w
as
f
ollow
s
[
14
]
:
(
)
=
2
.
30
3
×
(6)
w
he
re,
is t
he
a
bs
or
ban
ce
of t
he
a
bsor
ber o
r win
dow
la
ye
r
that cal
culat
ed
as foll
ows:
=
1
−
−
(7)
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
10
, No
.
3
,
J
une
2020
:
2918
-
2925
2920
a
lso,
an
d
are t
he reflect
ance
and tra
ns
m
itta
nce
of qua
ntum
d
ot w
in
dow or abs
orbe
r
la
ye
r
that
evaluate
d
f
r
om t
he follo
wing
[15]:
=
2
+
2
+
2
1
+
2
2
2
+
2
, and
=
16
0
2
2
1
+
2
2
2
+
2
(8)
The
re
fr
act
ive
ind
e
x
or
substr
at
e
o
f
qua
ntu
m
dot
thin
fil
m
m
at
erial
(
,
)
wi
ndow
or
a
bsor
be
r
la
ye
r
has bee
n ca
lc
ulate
d
as
f
ollows:
=
√
|
|
+
2
(9)
The
diele
ct
ric
const
ant
of
the
qu
a
ntu
m
do
t
se
m
ic
on
duct
or
la
ye
r
m
at
erial
,
wh
ic
h
ca
n
be
de
scribe
d
by
us
in
g
t
he Dr
ude m
od
el
w
it
h r
espect t
o [
11, 1
2,
16
,
17]
as
fol
lows
:
=
∞
(
1
−
2
2
+
(
)
)
, and
∞
=
(
1
+
2
(
(
)
)
2
)
(10)
The
refract
ive
ind
e
x
of
fro
nt
thin
film
layer
m
a
te
rial
(ZnO,
I
TO
or
SnO
2
)
n
x
cal
c
ulate
d
us
in
g
sel
l
m
ei
er
equ
at
ion
s
[
18
,
19]
.
The
substrat
e
la
ye
r
m
at
erial
o
f
abs
orber
la
ye
r
is
m
et
a
ll
ic
m
at
erial
(Cu,
A
u,
Mo)
.
The die
le
ct
ric
const
ant
of
t
he m
et
al
l
ic
m
at
eri
al
can
be desc
ribe
d
as
[
16
]:
=
+
1
−
2
2
+
(
)
(11)
w
he
re,
m
is
t
he
m
acro
scop
i
c
dam
pin
g
co
ns
ta
nt
due
to
the
disp
e
rsion
of
the
el
ect
ron
s
by
the
ion
s
of
the
syst
e
m
of
m
e
t
al
li
c,
m
is
the
plas
m
a
ang
ular
fr
e
que
ncy,
ε
INTRA
is
the
con
trib
u
ti
on
from
the
intra
-
ba
nd
transiti
ons.
Th
e
ref
racti
ve
in
dex
of
s
ub
st
rate
la
ye
r
m
a
te
rial
of
abs
orber
l
ay
er
cal
culat
ed
us
ing
th
e
diele
ct
ric
const
ant
of
m
e
ta
ll
ic
su
bs
trat
e
la
ye
r
ε
m
the
fo
r
ward
di
od
e
c
ur
ren
t
of
pr
opos
a
l
heteroj
un
ct
io
n
qua
ntu
m
do
t
cel
ls
can e
val
uate
[13] as:
(
)
=
[
(
(
+
(
)
)
)
−
1
]
(1
2
)
=
√
e
x
p
(
−
)
√
ᵼ
ᵼ
ℎ
(13)
wh
e
re,
is
re
ve
rse
sat
urat
io
n
current
de
ns
i
ty
in
qua
ntu
m
do
t
cel
ls,
is
the
diode
qu
al
it
y
factor,
is
series
resist
anc
e.
The
wi
dth
of
the
de
pleti
on
la
ye
r
dep
e
nd
s
on
the
diele
ct
ric
con
sta
nt
of
quant
um
do
t
abso
r
be
r
la
ye
r
m
a
te
rial
t
hat can
b
e
calc
ulate
d by the
foll
ow
i
ng exp
re
ss
ion [
20
]
.
=
√
2
0
(
−
)
(
−
)
(14)
w
he
re
is
the
buil
t
-
in
pote
ntial
,
−
is
the
co
nce
ntrati
on
of
un
com
pen
sat
ed
acce
ptors.
Wh
at
e
ver, tota
l photo ge
ner
at
ed
c
urren
t
de
nsi
ty
, th
e open
ci
rcu
it
volt
age
, e
ff
ic
ie
ncy a
nd f
i
ll
f
act
or
of propo
s
al
heter
ojuncti
on
qu
a
ntu
m
d
ot m
od
el
s
can
b
e
obtai
ned [
13]
as
:
ℎ
(
)
=
∫
(
.
)
∞
0
(15)
The
res
ultant
phot
ocurr
e
nt
de
ns
it
y
(
.
)
de
pende
nt
on
the
ge
nerat
ion
rate
a
n
d
dep
le
ti
on
wi
dt
h
of
heter
ojunct
ion
qu
a
nt
um
do
t
cel
l
bas
e
d
on
[13].
T
he
net
e
xter
na
l
current
de
ns
it
y
from
pr
opos
al
heter
ojuncti
on
qu
a
ntu
m
d
ot
a
so
la
r
cel
l
ob
ta
i
ned b
y t
he foll
ow
i
ng exp
ressi
on [2
1]:
=
ℎ
(
)
−
(
)
−
(
+
(
)
ℎ
)
(16)
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Desig
n moder
n st
ru
ct
ure
for
het
eroju
nction q
uantum
dot s
ola
r cell
s (
A.
Thab
et
)
2921
w
he
re,
ℎ
is
the
sh
unt
re
sist
anc
e,
V
is
the
a
pp
li
ed
vo
lt
a
ge.
More
ov
e
r,
t
he
op
e
n
ci
rc
uit
volt
age
of
qu
a
nt
u
m
do
t t
hin
film
so
la
r
eq
uatio
n
is
expresse
d
as
fo
ll
ow
s
[22]:
=
(
)
ln
[
ℎ
+
1
]
(17)
=
×
(18)
w
he
re:
is
the
m
axi
m
u
m
po
int
of
outp
ut
powe
r
de
ns
it
y
of
qua
ntu
m
dot
cel
l
wh
ic
h
c
al
culat
e
from
−
V
cu
rv
e
.
Final
form
of
eff
ic
ie
ncy
an
d
Fil
l
factor
of
quan
tum
do
t
thin
f
ilm
so
la
r
cel
l
cal
culat
ed
b
y
the
f
ollo
wing e
xpressi
on [22
]
:
.
=
×
ℎ
(
19)
=
ℎ
.
×
100
(20)
3.
QUANT
UM S
OLAR CEL
L
S PAR
AM
ET
ERS
The
pr
opos
al
m
od
el
s
are
us
e
d
pa
ram
et
ers
of
tradit
io
nal
pract
ic
a
l
m
od
el
s
by
us
in
g
ne
w
te
chn
iq
ues,
thu
s
,
it
has
be
en
ac
hieve
d
ne
w
high
e
ff
ic
ie
ncy
qua
ntu
m
dot
s
olar
cel
ls
with
sm
al
le
st
abs
orber
an
d
window
la
ye
r
thick
ness
f
or
savi
ng
th
e
co
nsum
ation
of
m
at
erial
s
and
he
nce
re
duci
ng
t
he
c
os
t
[
2
,
3
,
6].
Ta
bles
1
-
3
dep
ic
ts t
he
m
ain
par
am
et
ers
of
proposal
hete
roj
un
ct
io
n q
ua
ntu
m
d
ot thi
n f
ilm
m
od
el
s.
Table
1.
Param
et
ers
of
us
a
ge
s
ub
st
rate m
at
eri
al
s f
or a
bsor
be
r
la
ye
r [23
-
25]
Mater
i
als
Plas
m
a
an
g
u
lar
f
re
q
u
en
cy
(
10
16
rad/s
)
Da
m
p
in
g
con
stan
t (
10
13
s
-
1
)
Cu
p
p
er
(Cu
)
1
.03
5
.26
Go
ld
(
Au
)
1
.29
0
.54
9
Molybd
en
u
m
0
.19
1
.14
Table
2.
Param
et
ers
of
us
a
ge m
at
erial
s [
2
,
3
,
6
,
26]
Para
m
eters
Cd
Te
CIGS
Pb
S
Cd
S
Bu
lk
energy ban
d
gap
(
eV) at roo
m
t
e
m
p
eratur
e
1
.5
1
.10
0
.39
5
2
.40
Bu
lk
abs
o
rptio
n
co
ef
f
icien
t
×
10
5
Cm
-
1
0
.4
0
.50
0
.00
8
0
.9
Ab
so
lu
te bu
lk
diel
ectric co
n
stan
t
9
.5
1
3
.6
1
8
.6
1
0
.2
Ban
d
gap
(
eV)
at
z
ero Kelvin
1
.60
7
7
1
.25
0
.54
3
2
.58
Ban
d
gap
para
m
et
er
ʛ
(eVK
-
1
)
×
10
−
4
3
.1
1
.02
5
4
.20
2
Ban
d
gap
para
m
et
er
(K)
108
272
0
.40
147
Electr
o
n
m
o
b
ilit
y
(
C
m
2
/
Vs)
320
100
1000
350
Ho
le
m
o
b
ility
(
C
m
2
/Vs)
40
25
80
50
Ef
f
ectiv
e
m
ass
of
electr
o
n
0
.11
0
.09
0
.1
0
.2
Ef
f
ectiv
e
m
ass
of
ho
les
0
.35
0
.75
0
.1
0
.7
Plas
m
a
an
g
u
lar
f
re
q
u
en
cy
(
×
10
16
rad/s
)
0
.05
2
0
.03
9
0
.01
4
0
.08
2
Da
m
p
in
g
con
stan
t (
×
10
13
s
-
1
)
8
.88
1
9
.5
1
.76
1
7
.6
Fer
m
i
velo
city
(
×
10
6
m
/s)
0
.59
0
.45
8
0
.89
Table
3.
Param
et
ers
of
us
a
ge
t
hin
film
so
la
r
cel
ls
m
od
el
s [2
,
3
,
6]
Para
m
eters
Sn
O
2
/Cd
S/Cd
Te/Cu
ZnO/C
d
S/CIGS/
M
o
IT
O/Cd
S/Q
DP
b
S/
Au
Ab
so
rber la
y
er
th
i
ck
n
ess
(
n
m
)
500
360
200
W
in
d
o
w layer thic
k
n
ess
(
n
m
)
100
40
70
Fron
t lay
e
r
th
ick
n
ess
(
n
m
)
100
450
100
Electr
o
n
lif
eti
m
e
(
s)
1
×
10
−
8
16
×
10
−
7
16
×
10
−
5
Ho
le lif
eti
m
e
(s)
5
×
10
−
8
1
∙
6
×
10
−
5
10
−
5
−
th
e con
cent
ration
of
u
n
co
m
p
en
sated
ac
cept
o
rs
(c
m
-
3
)
2
.
44
×
10
12
7
.
56
×
10
13
0
.
19
×
10
10
Dio
d
e qu
ality
f
act
o
r
1
.6
1
.9
1
.4
Series
resistan
ce
(
.
C
m
2
)
1
.08
2
.5
2
.1
Sh
u
n
t r
esis
tan
ce (
.
C
m
2
)
103
320
204
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
10
, No
.
3
,
J
une
2020
:
2918
-
2925
2922
4.
RESU
LT
S
A
ND AN
ALYSIS
Qu
a
ntu
m
do
t
siz
e
can
be
e
m
plo
ye
d
in
al
l
so
la
r
cel
ls
to
red
uce
c
os
t
by
savin
g
us
a
ge
m
at
erial
s
siz
e,
enh
a
nce
a
bsor
ption
a
nd
ef
fici
ency
by
co
ntr
olli
ng
the
siz
e
of
the
quant
um
do
t
siz
e,
sin
ce
sever
al
pro
per
ti
es
can
cha
nge
du
e
to
any
decr
e
ase
in
the
siz
e
of
the
nano
part
ic
le
s.
This
work
discu
sse
s
th
e
ben
e
fit
of
re
du
ci
ng
the
qua
ntu
m
dot
ra
dii
abs
orb
er
a
nd
wi
ndow
la
ye
r
ra
dii
on
the
pe
rfo
rm
ance
of
the
hete
roj
un
ct
io
n
quant
um
do
t
thin
fil
m
so
la
r
cel
ls
(ITO/
Q
DCd
S/
QDPbS/
Au),
(Z
nO/Q
D
CdS/Q
DCI
GS
/
Mo),
(
SnO
2
/Q
DCd
S/
QD
C
dT
e/
Cu)
m
od
el
s.
4
.
1.
Op
tical c
ha
r
act
eri
z
at
i
on o
f
q
uant
um
do
t
la
yers
Figure
1
s
ho
ws
ra
dii
eff
ec
t
on
the
refr
act
ive
ind
e
x
and
diele
ct
ric
con
sta
nt
of
qu
a
ntu
m
do
t
sem
ic
on
duct
or
s
CdS,
C
dTe,
CIGS
a
nd
P
bS
at
wav
e
le
ng
t
h
50
0n
m
.
It
ha
s
bee
n
de
picte
d
that
the
refract
ive
ind
e
x
an
d
a
bso
lute diel
ect
ric c
onsta
nt of qua
ntu
m
d
ot (
Cd
S
, P
bS, CI
GS
a
nd CdTe
)
sem
ico
nd
ucto
rs
ha
ve
b
een
lowe
r
tha
n
t
he
re
fr
act
i
ve
ind
e
x
a
nd
diele
ct
ric
co
nst
ant
of
bulk
m
a
te
rial
s;
becau
se
of
de
creasin
g
the
se
m
ic
on
du
ct
or
m
at
eria
l
s
iz
e
.
On
the
ot
her
ha
nd,
Fig
ure
2
desc
ribes
the
eff
ect
of
na
nopa
rtic
le
s
rad
ii
of
qu
a
ntu
m
dot
s
e
m
ic
on
duct
ors
la
ye
rs
(C
dTe
,
CdS
,
P
bS
an
d
CIG
S)
on
t
he
abs
orptio
n
c
oe
ff
ic
ie
nt
a
nd
e
nergy
band ga
p
at
wa
ve
le
ngth
50
0nm
an
d
thick
nes
s 700nm
.
4
.
2.
New
hete
rojuncti
on
qu
an
t
um
dot
th
i
n f
il
m s
ola
r
ce
ll
s
Figure
3
il
lustr
at
es
the
short
c
ircuit
cu
rr
e
nt
de
ns
it
y,
open
ci
rcu
it
volt
age,
f
il
l
factor
an
d
e
ff
ic
ie
ncy
of
heter
ojuncti
on
qu
a
ntu
m
do
t
SnO
2
/QDC
dS
/
QD
C
dTe/Cu
t
hin
film
so
la
r
cel
l
with
var
ia
nt
quant
um
do
ts
CdS
and
CdTe
ra
dii.
Wh
at
eve
r,
Fi
g
ure
4
desc
rib
es
the
s
hort
ci
r
cuit
cu
rr
e
n
t
de
ns
it
y,
ope
n
ci
r
cuit
volt
age,
fill
facto
r
and
e
ff
ic
ie
ncy
of
heteroj
unct
ion
qu
a
ntu
m
do
t
Zn
o/QDCd
S/QD
C
IGS/M
o
thin
film
so
l
ar
cel
l
with
var
ia
nt
of
qu
a
ntu
m
do
ts
CdS
a
nd
CIG
S
rad
ii
.
Fig
ur
e
5
desc
ribes
t
he
sh
ort
ci
rc
uit
cu
rr
e
nt
de
ns
it
y,
op
e
n
ci
rc
uit
vo
lt
age,
fill
factor
an
d
eff
ic
ie
ncy
of
heter
ojuncti
on
quant
um
do
t
ITO
/
QD
C
dS
/Q
DPbS/A
u
t
hin
film
so
la
r
cel
l
with
var
ia
nt
rad
ii
of
quant
um
do
t
CdS
an
d
PbS.
The
tradit
io
na
l
per
f
or
m
ance
of
heter
ojuncti
on
C
dS
/Q
DPb
S
has
been
e
nh
a
nce
d
by
re
placi
ng
the
C
dS
an
d
Q
DPbS
la
ye
r
w
i
th
qu
a
ntu
m
do
t
Q
DCdS
a
nd
QDPbS
la
ye
rs
at
rad
ii
1n
m
or
1.3
5n
m
.
It
is
no
ti
ced
that.
the
bes
t
nanop
a
rtic
le
s
rad
ii
f
or
wind
ow
a
nd
abs
orb
er
la
ye
rs
is
1n
m
fo
r
enh
a
ncin
g
t
he
op
e
n
ci
rcu
it
volt
age,
s
hort
ci
r
cuit
cu
rr
e
nt
de
ns
it
y,
fill
facto
r
an
d
e
ne
rg
y
c
onve
rsion
e
ff
ic
ie
ncy
of the cell
.
4
.3
.
C
ompari
s
on
between
t
r
ad
iti
onal a
nd heter
oj
u
ncti
on qu
antum
d
ots s
ola
r
cell
s
Figure
6
il
lustr
at
ed
the
be
nef
i
t
of
us
in
g
qua
ntu
m
do
t
siz
e
of
wi
ndow
la
ye
r
CdS
instea
d
of
bulk
on
e
enh
a
nce
d
t
he
abs
orption
of
window
la
ye
r
wh
ic
h
resu
lt
m
or
e
enh
a
nce
m
ent
in
J
-
V
a
nd
P
-
V
cha
rac
te
risti
cs.
The
e
nh
a
ncem
ent
in
the
J
-
V
a
nd
P
-
V
c
har
act
erist
ic
s
of
tra
di
ti
on
al
pract
ic
al
m
od
el
has
bee
n
occ
urre
d
by
us
in
g
window
la
ye
r
CdS
an
d
abs
orbe
r
la
ye
r
Cd
Te
in
qu
a
ntum
do
t
siz
e
with
rad
ii
1nm
a
s
sh
ow
n
in
Figure
7.
On
t
he
oth
e
r
ha
nd,
Fig
ur
e
8
sh
ows
J
-
V
a
nd
P
-
V
c
har
act
e
r
ist
ic
s
of
pr
a
ct
ic
al
ZnO
/C
dS/
CIGS
/M
o
m
odel
and
pro
po
sal
heter
ojuncti
on
qua
ntu
m
do
t
Zn
O/Q
DCd
S/
QDC
IG
S/M
o
thin
fil
m
so
la
r
c
el
l.
Table
4
dep
ic
t
s
the
com
par
iso
n
in
the
pe
rform
ance
of
pract
ic
al
pr
evi
ous
m
o
dels
[2
,
3
,
6]
and
the
heter
ojuncti
on
qua
nt
um
do
t
pro
po
sal
m
od
e
ls
at
room
tem
per
at
ur
e
.
T
he
ta
ble
show
t
hat
the
perfor
m
ance
of
sel
ect
ed
m
od
el
s
ha
s
bee
n
enh
a
nce
d by usi
ng w
i
ndow la
ye
r
an
d
a
bsor
be
r
la
ye
r
in
qua
ntu
m
d
ot size
with
rad
ii
1n
m
.
Figure
1. R
adii effect
on th
e r
efr
act
ive
in
dex an
d
diele
ct
ric co
ns
t
ant of
quant
um d
ot sem
ic
on
du
ct
or
s
CdS,
C
dTe
, CIGS a
nd P
bS
Figure
2. Ra
dii eff
ect
on th
e a
bs
or
ption coe
ffi
ci
ent
and ene
r
gy b
a
nd
gap f
or qua
ntu
m
d
ot CdTe
, C
dS
,
Pb
S
and C
IGS
la
ye
rs
at
thick
ne
ss 70
0n
m
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Desig
n moder
n st
ru
ct
ure
for
het
eroju
nction q
uantum
dot s
ola
r cell
s (
A.
Thab
et
)
2923
Figure
3.
Q
ua
nt
um
d
ots CdS a
nd CdTe
r
a
dii
eff
ect
on the
pe
rfor
m
ance
of h
et
e
roj
un
ct
io
n q
uan
t
um
d
ot
SnO
2
/QDC
dS
/
QD
C
dTe/Cu
th
in f
il
m
so
la
r
ce
ll
Figure
4.
Q
ua
nt
um
d
ots CdS a
nd CI
GS
ra
dii eff
ect
on the
pe
rfor
m
ance
of h
et
e
roj
un
ct
io
n q
uan
t
um
d
ot
Zn
O/QD
C
dS
/
QD
C
IGS/M
o
t
hin
film
so
la
r
cel
l
Figure
5
.
Q
ua
nt
um
d
ots CdS a
nd P
bS
ra
dii ef
fect o
n
the p
e
rfo
rm
ance of
heteroj
unc
ti
on
qu
a
ntu
m
dot
ITO
/
QD
C
dS
/Q
DPbS/A
u
t
hin
fil
m
so
la
r
cel
l
Figure
6
.
J
-
V
a
nd P
-
V
c
ha
racteri
sti
cs o
f
prac
ti
cal
heter
ojuncti
on
qu
a
ntu
m
d
o
t
a
bs
or
ber la
ye
r
CdS/Q
DPbS m
od
el
a
nd
pro
posal
quan
t
um
d
ot
QD
C
dS
/Q
DPb
S thin fil
m
so
la
r
cel
l
Figure
7
.
J
-
V
a
nd P
-
V
c
ha
racteri
sti
cs o
f
prac
ti
cal
su
b
m
ic
ro
S
nO
2
/C
dS/
CdTe/C
u
m
od
el
and
pro
pos
al
heter
ojuncti
on
qu
a
ntu
m
d
ot
SnO
2
/QDC
dS
/
QD
C
dTe/Cu
th
in f
il
m
s
olar
ce
ll
Figure
8.
J
-
V
a
nd P
-
V
c
ha
racteri
sti
cs o
f
prac
ti
cal
su
b
m
ic
ro
ZnO/C
dS/
CIGS
/M
o m
od
el
a
nd
pro
posal
heter
ojuncti
on
qu
a
ntu
m
d
ot
Zn
O/QD
C
dS
/
QD
C
IGS/M
o
t
hin
film
so
la
r
cel
l
Evaluation Warning : The document was created with Spire.PDF for Python.
IS
S
N
:
2088
-
8708
In
t J
Elec
&
C
om
p
En
g,
V
ol.
10
, No
.
3
,
J
une
2020
:
2918
-
2925
2924
Table
4.
C
om
par
iso
n betwee
n effici
en
cy
and
elec
tric
proper
ti
es o
f
t
rad
it
io
na
l
m
od
el
s a
nd
h
et
er
ojuncti
on
qu
a
ntu
m
d
ot
pr
opos
al
m
od
el
s
at
r
oom
te
m
per
at
ur
e
Cells
Op
en
Circuit
Vo
ltag
e V
o
c
(Volt)
Sh
o
rt
Circu
it Cu
rr
en
t
Den
sity
J
s
h
(
m
A/
c
m
2
)
Fill Factor
F.F
Ef
f
icien
cy
(%)
Cd
S/ (
QDPb
S
_
R=
1
.35
n
m
)
[
3
]
0
.63
12
0
.43
3
.3
(QDCd
S/QDPb
S
)
_
R=1
n
m
0
.71
1
7
.75
0
.63
7
.88
(Cd
S/Cd
Te)
[
4
]
0
.58
1
8
.6
0
.65
4
.7
(QDCd
S/QDCd
T
e
)
_
R=1
n
m
0
.81
3
5
.91
0
.67
1
9
.36
(Cd
S/CIGS)
[
5
]
0
.59
21
0
.68
5
8
.1
(QDCd
S/QDC
IGS
)
_
R=1
n
m
0
.83
3
2
.43
0
.71
1
9
.05
5.
THE
RMAL E
FFICIE
NCY AN
ALY
SIS
Table
5
de
picts
the
therm
al
eff
ect
on
eff
ic
ie
ncy
o
f
pro
po
sal
heteroj
un
ct
io
n
quant
um
do
t
SnO2
/
QD
C
dS
/
QD
C
dTe/Cu
,
Zn
O/QD
C
dS
/
QD
C
IGS/M
o,
ITO
/Q
DCdS/
QDPbS/
A
u
thin
fil
m
so
la
r
cel
ls
at
var
i
ou
s
ra
dii
of
window
a
nd
abs
orbe
r
la
ye
r
m
at
erial
s
CdS,
C
dTe.
T
he
energy
c
onve
r
sion
ef
fici
enci
es
of
heter
ojuncti
on
qu
a
ntu
m
do
ts
p
r
opos
al
t
hin
f
ilm
so
la
r
cel
ls
hav
e
bee
n
hi
gher
tha
n
the
ef
fici
ency
of
pr
a
ct
ic
al
m
od
el
s
ZnO
/C
dS
/C
I
GS
/M
o,
ITO
/C
dS
/Q
DPbS/A
u,
S
nO2/C
dS
/C
dTe/
Cu
thin
film
so
la
r
cel
ls
under
high
therm
al
co
nd
it
ion
s
.
Table
5.
C
om
par
iso
n betwee
n p
rop
os
al
selec
te
d
H
JQ
D
t
hin
fil
m
so
la
r
cel
ls
and tra
diti
on
al
pract
ic
al
pr
e
vious m
od
e
ls
So
lar
Cells
Ef
f
icien
cy
%
300K
3
3
0
K
3
5
0
K
3
7
0
K
4
0
0
K
IT
O/Cd
S/Q
DPb
S/
Au
1
.47
1
.25
1
.11
0
.98
0
.82
Sn
O
2
/Cd
S/Cd
Te/Cu
6
.15
5
.26
4
.69
4
.13
3
.3
2
ZnO/C
d
S/CIGS/
M
o
8
.00
5
6
.61
5
.74
4
.90
3
.71
Ef
f
icien
cy
at
r
ad
ii
1
n
m
IT
O/Q
DCd
S/QDP
b
S/Au
7
.88
6
.33
5
.43
4
.63
3
.62
Sn
O
2
/QDCd
S/QD
Cd
Te/Cu
1
9
.36
1
7
.34
1
6
.03
1
4
.75
1
2
.88
ZnO/QDC
d
S/QDC
IGS/M
o
1
9
.05
1
6
.40
1
4
.81
1
3
.31
1
1
.17
Ef
f
icien
cy
at
r
ad
ii
1
.5n
m
IT
O/Q
DCd
S/QDP
b
S/Au
4
.57
3
.72
3
.22
2
.78
2
.5
Sn
O
2
/QDCd
S/QD
Cd
Te/Cu
1
4
.38
1
2
.82
1
1
.79
1
0
.78
9
.29
ZnO/QDC
d
S/QDC
IGS/M
o
1
5
.08
1
2
.89
1
1
.52
1
0
.22
8
.40
Ef
f
icien
cy
at
r
ad
ii
2
n
m
IT
O/Q
DCd
S/QDP
b
S/Au
3
.43
2
.82
2
.45
2
.13
1
.71
Sn
O
2
/QDCd
S/QD
Cd
Te/Cu
1
2
.32
1
0
.94
1
0
.03
9
.14
7
.83
ZnO/QDC
d
S/QDC
IGS/M
o
1
3
.36
1
1
.34
1
0
.08
8
.89
7
.19
Ef
f
icien
cy
at
r
ad
ii
3
n
m
IT
O/Q
DCd
S/QDP
b
S/Au
2
.56
2
.12
1
.86
1
.63
1
.32
Sn
O
2
/QDCd
S/QD
Cd
Te/Cu
1
0
.50
9
.29
8
.49
7
.71
6
.6
ZnO/QDC
d
S/QDC
IGS/M
o
1
1
.79
9
.93
8
.78
7
.68
6
.11
6.
CONCL
US
I
O
N
The
decr
ease
in
the
grai
n
s
i
ze
of
C
dTe,
CIGS,
CdS
,
P
bS
sem
ic
on
du
ct
or
s
to
quant
um
do
t
siz
e
decr
ease
d
the
diele
ct
ric
co
nst
ant
an
d
refrac
ti
ve
in
dex.
W
hateve
r,
us
i
ng
quant
um
do
t
siz
e
of
Cd
Te,
CIGS,
CdS,
PbS
sem
ic
ondu
ct
or
s
in
creased
the
ab
so
r
ptio
n
c
oeffici
ent
of
la
ye
rs
an
d
e
nergy
ba
nd
ga
p.
W
i
ndow
a
nd
abs
orber
la
ye
rs
’
m
a
te
rial
s
in
qu
ant
um
siz
e
en
han
ce
d
the
e
ne
rg
y
co
nversi
on
eff
ic
ie
ncy,
fill
factor,
short
ci
rcu
i
t
current
de
ns
it
y,
ope
n
ci
rc
uit
vo
lt
age
of
S
nO
2
/C
dS
/C
dTe/
Cu,
I
TO/C
dS
/
QDPbS/
A
u
an
d
Z
nO
/C
dS
/C
I
GS
/M
o
thin
film
so
la
r
cel
ls
tradit
io
nal
m
od
el
s
th
at
are
ha
ving
su
b
-
m
ic
ro
abs
orber
la
ye
rs’
t
hick
nesses
a
nd
lo
w
eff
ic
ie
ncies.
More
over,
the
re
du
ct
io
n
i
n
ra
di
i
of
wind
ow
a
nd
a
bs
or
ber
la
y
ers
m
at
erial
s
i
n
qu
a
ntu
m
do
t
siz
e
to
be
1nm
is
the
best
r
adius
for
en
han
ci
ng
t
he
perform
ance
of
hete
roj
unct
ion
q
uan
t
um
do
t
ITO
/
QD
C
dS
/Q
DPbS/A
u,
Zn
O/Q
DCd
S/
QDC
IG
S/M
o
a
nd
SnO
2
/QDC
dS
/
QD
C
dTe/Cu
c
el
ls
du
e
to
i
ncrea
sin
g
the
e
nergy
ba
nd g
ap
o
f
a
bsor
ber
la
ye
r
a
nd
increasi
ng
a
bs
orptio
n
of w
in
dow
an
d
abs
orb
er
la
ye
rs
w
hich
le
ad
t
o
decr
easi
ng
the
rec
om
bin
at
ion
a
nd
inc
reasi
ng
the
open
ci
rcu
it
vo
lt
age
,
sh
ort
ci
rc
uit
c
urren
t
de
ns
it
y,
outp
ut
powe
r
den
sit
y.
Dec
reasin
g
t
he
siz
e
of
quantum
do
t
wi
ndow
a
nd
ab
s
o
r
ber
la
ye
rs’
m
at
erial
s
enh
a
nced
the p
e
rfo
rm
ance of
HJQD pr
oposa
l sel
ect
ed c
el
ls at
h
ig
h
te
m
per
at
ur
es
.
Evaluation Warning : The document was created with Spire.PDF for Python.
In
t J
Elec
&
C
om
p
En
g
IS
S
N: 20
88
-
8708
Desig
n moder
n st
ru
ct
ure
for
het
eroju
nction q
uantum
dot s
ola
r cell
s (
A.
Thab
et
)
2925
ACKN
OWLE
DGE
MENTS
The
pr
e
se
nt
w
ork
was
s
uppo
rted
by
Na
no
te
chnolo
gy
Re
se
arch
Ce
nter
at
As
wan
U
niv
e
rsity
that
is
est
ablished
by
ai
din
g
the
Scie
nce
a
nd
Tec
hnology
De
velo
pm
ent
Fund
(
S
TDF),
Egy
pt,
Gr
a
nt
No
:
Proje
ct
ID
505, 20
09
-
2011.
REFERE
NCE
S
[1]
T.
Lee,
A.
Ebon
g,
“
A
rev
ie
w
of
Thi
n
Fil
m
Solar
Cel
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Technol
og
ie
s
and
Chal
l
eng
es
,
"
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newab
le
and
Sustainabl
e
Ene
rgy
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ws,
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se
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,
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e
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Z.
Ba
i,
J.
Yang
,
S.
DePba
and
D.
W
ang,
"Thin
Fil
m
CdTe
Solar
Cel
ls
W
it
h
an
Abs
orbe
r
Lay
e
r
Th
ickness
in
Micro
-
and
Sub
-
Micro
m
et
er
sca
le
,
"
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ed
Ph
ysic
s Le
tt
e
rs
,
Volum
e
99,
I
ss
ue
14
,
2011
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[3]
O.
lund
ber
g
,
M.
Bodega
rd
and
L.
Stolt
,
“
Influe
n
ce
of
th
e
Cu(In
,
Ga)Se2
Thickn
ess
and
Gr
adi
n
g
on
Solar
Cel
l
Perform
anc
e,
"
P
rogr
ess i
n
Phot
o
pholat
ic
s:
Re
sea
rch
and
Apb
licat
ion
,
Vol
.
11
,
No
.
2,
p
p.
77
–
88
,
2
003.
[4]
A.
Nozik,
"N
anosc
ie
nc
e
and
Nanostruc
tur
es
for
Photovolt
ai
cs
and
Solar
Fuels.
Nano
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