Internati
o
nal
Journal of Ele
c
trical
and Computer
Engineering
(IJE
CE)
V
o
l.
6, N
o
. 4
,
A
ugu
st
2016
, pp
. 15
22
~
1
528
I
S
SN
: 208
8-8
7
0
8
,
D
O
I
:
10.115
91
/ij
ece.v6
i
4.1
028
7
1
522
Jo
urn
a
l
h
o
me
pa
ge
: h
ttp
://iaesjo
u
r
na
l.com/
o
n
lin
e/ind
e
x.ph
p
/
IJECE
Design and Fabrication of Re
ctifying Antenna Circuit for
Wireless Power Transmission Sy
stem Operating at ISM Band
Do
an
Hu
u
Ch
uc
1
, B
a
c
h
Gi
a
Du
on
g
2
1
Department of Electrical
and
Electron
i
cs, Hai Phong Private Un
iversity
, Vietnam
2
Department of Electronics
and
Telecommunications,
VNU University
of
Engineering and T
echnology
,
Vietnam
Article Info
A
B
STRAC
T
Article histo
r
y:
Received
Mar 30, 2016
Rev
i
sed
May 23
, 20
16
Accepted
Jun 10, 2016
This paper intro
duces an
overview of
a
rec
tif
yi
ng antenn
a (r
ect
enna)
circu
i
t
topolog
y
for microwave power transmi
ssion sy
s
t
em. Specially
,
a rectenna
based on
a micro
s
trip patch
anten
n
a an
d
a microw
ave doub
le voltage rectifier
at 2.45GHz were designed an
d fabric
ated
. T
h
e antenn
a’s
re
turn los
s
is
achi
e
ved
of -15
dB at
2.45GHz.
The m
i
crow
ave
to DC conv
ers
i
o
n
effi
ci
en
c
y
of the rectenna
was measured as
71.5% with 22 dBm input powe
r
and 810
load. Th
e des
i
g
n
and s
i
m
u
lated
res
u
lts
were ca
rried out b
y
the
m
i
crowave
engineering prof
essional design
soft
ware, known
as ADS2009 p
ackag
e. A
ll
design and
simulation
results will be r
e
ported.
Keyword:
Ant
e
nna
Conversion E
f
ficiency
H
S
MS2
820
Microwa
v
e Power
Transm
ission
Rectifier
W
i
reless Powe
r
T
r
ansm
ission
Copyright ©
201
6 Institut
e
o
f
Ad
vanced
Engin
eer
ing and S
c
i
e
nce.
All rights re
se
rve
d
.
Co
rresp
ond
i
ng
Autho
r
:
D
o
an
Hu
u
Chuc,
Depa
rtm
e
nt of
Electrical and
Electronics
,
Hai Ph
ong
Pri
v
ate Un
iv
ersity,
36
Da
n
Lap
R
o
ad,
Le C
h
a
n
Di
st,
H
a
i Phon
g City,
V
i
etn
a
m
.
Em
a
il: ch
u
c
dh@hpu
.ed
u
.vn
1.
INTRODUCTION
M
i
crowa
v
e
po
wer t
r
a
n
sm
i
ssion
(M
PT
) i
s
o
n
e o
f
t
h
e
hot
t
opi
cs i
n
m
i
crowave a
n
d m
i
l
l
i
m
e
t
e
r wave
devices
, circuit
,
and system
s.
Micr
owa
v
e power
tra
n
sm
ission has had
a
l
o
ng
history
be
fore the m
o
re recent
m
ovem
e
nt
t
o
ward
wi
rel
e
ss p
o
we
r t
r
a
n
sm
i
s
si
on (
W
P
T
). M
P
T can
be ap
p
l
i
e
d not
onl
y
t
o
beam
t
y
pe poi
nt
t
o
poi
nt
W
P
T b
u
t
al
so t
o
an e
n
er
gy
ha
rve
s
t
i
ng sy
st
em
fed fr
om
di
st
ri
but
ed o
r
b
r
oadca
s
t
i
ng ra
di
o
wa
ves.
A
gene
ric MPT
block
dia
g
ram
is shown in
Figure
1.
A
ke
y c
o
m
pone
nt in the receivi
ng sys
t
em
is the rectifying
ant
e
n
n
a,
or
rec
t
enna.
A
rect
enna
, w
h
i
c
h
i
s
use
d
t
o
c
o
nve
r
t the microwa
v
e power t
o
the direct curre
nt (DC
)
po
we
r, i
s
on
e of t
h
e
key
co
m
ponent
s o
f
t
h
e M
P
T sy
st
em
. A rect
enna
i
s
a passi
ve el
em
ent
wi
t
h
rect
i
f
y
i
n
g
diodes that
operates wit
hout an internal
power s
o
urce
. It
can r
ecei
ve a
n
d rectify m
i
crowa
v
e
powe
r
to DC
p
o
w
e
r
[1
].
Vari
ous
rect
e
n
nas ca
n
be a
p
p
l
i
e
d. T
h
i
s
de
pe
nds
o
n
re
qui
re
m
e
nt
s fo
r t
h
e s
y
st
em
and i
t
s
users
.
F
o
r a
rectenna a
rray, the a
n
tennas i
n
the
recte
nna
s
can a
b
s
o
rb
100%
of input m
i
crowa
v
es.
Sinc
e the MPT
syste
m
is
an ene
r
gy syste
m
, a rectifying circ
u
it with
a higher e
ffici
ency is requ
i
r
e
d
. T
h
e
o
ret
i
cal
l
y
, vari
ous
rect
enna
s
can achie
ve 100% efficiency [1]-[4].
Wo
rki
ng
fre
que
ncy
p
l
ay
s an im
port
a
nt
rol
e
i
n
de
s
i
gn o
f
t
h
e rect
e
nna
. It
i
s
usual
l
y
det
e
rm
i
n
ed by
t
h
e desi
re
d ap
pl
i
cat
i
on.
At
l
o
w
fr
eque
nci
e
s (
b
el
ow
1
GHz
),
hi
g
h
gai
n
ant
e
nna
s t
e
n
d
to be
quite large.
Increase
d
t
h
e
fre
que
ncy
allows t
h
e
use
of s
o
m
a
ny com
p
act antennas. Furt
herm
ore, the
am
ount
o
f
e
n
er
gy
avai
l
a
bl
e
at
a cert
a
i
n
di
st
an
ce fr
om
a t
r
ans
m
i
t
t
e
r i
s
gi
ven
by
Fri
i
s
e
q
uat
i
o
n
[
5
]
-
[
7
]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
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ECE
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8
Design
and Fabrication
of Re
ctifying Ante
nna Ci
rcuit for W
i
reless Power
.... (Doan
Huu
Chuc)
1
523
(1
)
Fi
gu
re 1.
B
l
oc
k di
ag
ram
of M
P
T
Whe
r
e
Pt is the
power of
the em
itter, Gt an
d Gr a
r
e
the em
itter and re
ceiver ant
e
nna
gai
n
respectively,
is the
wa
velengt
h
use
d
a
n
d D is the
dista
n
ce se
parating the em
itter and the
receive
r. The
available powe
r
at a certain distance from
the em
itter de
c
r
eases as t
h
e freque
ncy incre
a
ses. Freque
ncies in
the 1 GHz
– 3 GHz
range
are
consid
ered to
provide a
g
ood com
p
rom
i
se between free space attenuation and
ant
e
n
n
a di
m
e
nsi
ons
.
We
ha
ve desi
gne
d, si
m
u
l
a
t
e
d
an
d fab
r
i
cat
ed
a
rectifying ante
nna circ
uit for m
i
crowave
powe
r
t
r
ansm
i
ssi
on o
p
erat
i
n
g at
S b
a
nd
. The
fi
rst
part
o
f
t
h
i
s
pa
per
prese
n
t
s
t
h
e pat
c
h ant
e
nn
a desi
g
n
p
r
o
b
l
e
m
of a
si
ngl
e
rect
en
na
ci
rcui
t
.
Desi
g
n
a
n
d
o
p
t
i
m
i
z
at
i
on
of t
h
e
deri
ved
v
o
l
t
a
ge
d
o
ubl
e
r
rect
i
f
i
e
r
m
odel
are p
r
es
ent
e
d
i
n
t
h
e
s
ubse
q
u
e
nt
part
s.
T
h
e
pri
n
t
e
d ci
rcui
t
boa
r
d
(PC
B
)
t
echn
o
l
o
gy
i
s
u
s
ed t
o
m
i
nim
i
ze t
h
e ci
rcui
t
si
ze an
d
l
o
sses.
Fi
nal
l
y
,
co
ncl
u
si
ons
a
n
d
ext
e
nsi
o
ns
of
t
h
i
s
st
udy
a
r
e di
sc
usse
d.
2.
A
N
T
EN
NA
DESIGN
Ante
nna
desi
gn is im
portant
in the
propos
ed r
ecte
nna
. T
h
e ante
nna is
use
d
to
receive transm
it
electrom
a
gnetic energy. In
or
der to re
duce the size of the rectenna, th
e
pa
tch antenna wa
s used
because
of its
ease in
teg
r
ation
with
p
r
in
ted
circu
it b
o
a
rd
(PCB) tech
no
log
y
. A gen
e
ral two-d
i
m
e
n
s
io
nal (2
D) rep
r
esen
tation
of
a
pat
c
h a
n
t
e
nna
i
s
gi
ve
n i
n
Fi
gu
re
2.
Fi
gu
re
2.
2
D
re
prese
n
t
a
t
i
o
n
of
a pat
c
h a
n
t
e
n
n
a
with
L leng
th
of th
e p
a
tch
,
d
dep
t
h
of
th
e substrate, t th
ick
n
e
ss of the
p
a
tch
.
The cha
r
acteri
s
tics of the antenn
as are
define
d m
a
inly by thei
r geometries and the m
a
terial
properties from which t
h
ey were m
a
de
. Ba
sically, a
microstrip “
p
atc
h
”
ante
nna is a ra
diator t
h
at is pl
aced on
t
op o
f
a gr
o
u
n
d
ed
di
el
ect
ri
c (su
b
st
rat
e
). Th
e desi
g
n
of
pat
c
h ant
e
n
n
as re
qui
res p
r
eci
se phy
si
cal
di
m
e
nsi
o
n
s
,
an
d power feed
ing
m
e
th
o
d
/locatio
n
for the an
tenn
a.
The o
b
j
ect
i
v
e
of t
h
i
s
part
i
s
t
o
desi
g
n
a si
ngl
e m
i
crost
r
i
p
pat
c
h ant
e
nn
a whi
c
h co
nsi
s
t
s
of
pat
c
h,
qua
rter-wa
v
e
t
r
ans
f
orm
e
r
and feed line. F
o
r the patc
h
antenna design, a rectangula
r
patch ante
nna
will be
desi
g
n
. Si
nce a
50
Ω
s
u
rface
m
ount adapte
r (SMA) connec
tor is goin
g to
be use
d
to c
o
nnect the fee
d
line to
th
e co
ax
ial cab
le, th
e feed
lin
e will b
e
a 50
Ω
feed
lin
e.
Th
e feed
lin
e
will b
e
feed
t
o
th
e p
a
tch
t
h
rou
g
h
a
m
a
t
c
hi
ng
net
w
or
k
whi
c
h i
s
a
qua
rt
er
-wa
v
e t
r
ansf
o
r
m
e
r. R
e
fer t
o
Fi
g
u
re
3
.
A pat
c
h
a
n
t
e
n
n
a
has bee
n
desi
gne
d usi
n
g
t
h
e
pat
c
h
ant
e
nna
sim
u
l
a
t
i
on so
ft
ware C
S
T.
We
use
d
FR
4
fo
r su
bst
r
at
e.
The cent
e
r f
r
e
que
ncy
of i
n
t
e
rest
was f
c
= 2.4
5
GH
z. Som
e
val
u
es are re
qui
red t
o
gi
ve
i
n
t
h
e
soft
ware
i
n
put
.
The
f
o
l
l
o
wi
ng
val
u
e
s
were a
s
sum
e
d as:
1
)
Th
e op
er
atin
g fr
equ
e
n
c
y,
fc = 2.45
GH
z
Evaluation Warning : The document was created with Spire.PDF for Python.
I
S
SN
:
2
088
-87
08
I
J
ECE
Vo
l. 6
,
N
o
. 4
,
Au
gu
st 2
016
:
15
22
–
1
528
1
524
2)
Su
bst
r
at
e di
el
ectric constant,
ε
r
=
4
.
34
3)
Hei
ght
of
t
h
e pat
c
h
,
h=
1.
6
m
m
The wi
dt
h of
t
h
e pat
c
h [
6
]
i
s
cal
cul
a
t
e
d
as,
(2)
And t
h
e e
ffecti
v
e
dielectric constant
[8] is e
s
tim
a
ted as,
(3)
The e
x
t
e
n
d
e
d di
m
e
nsi
ons
o
f
t
h
e pat
c
h
al
on
g
i
t
s
l
e
ngt
h
L is
esti
m
a
ted
as [8],
No
w,
t
h
e l
e
ngt
h
of
t
h
e
pat
c
h
[
8
]
,
For t
h
e wi
dt
h and l
e
n
g
t
h
of
t
h
e qua
rt
er
-wa
v
e t
r
ans
f
orm
e
r and 5
0
Ω
feed
lin
e in
th
is p
r
oj
ect are
d
e
term
in
ed
b
y
th
e Lin
e
Calc i
n
ADS20
0
9
software. Howe
ver th
e
v
a
lu
e t
h
at o
b
t
ain
e
d
from Lin
e
Calc will b
e
m
o
d
i
fied
to
su
i
t
ab
le v
a
lu
e su
ite with
t
h
e fabricatio
n
t
echno
lo
g
y
t
h
at will be u
s
e t
o
fabricate th
e an
ten
n
a
. The
o
b
t
ain
e
d
v
a
l
u
es fo
r t
h
e
p
a
ram
e
ter are illu
st
rated
in
t
h
e Tab
l
e 1
b
e
low.
Tab
l
e
1
.
W
i
d
t
hs, leng
th
s of
t
h
e p
a
tch an
tenna
Patch
(
m
m
)
/4 T
r
ansform
e
r
(m
m
)
50
f
eedline (
m
m)
W
i
dth 37,
5
1
2,
89
L
e
ngth 29,
02
13
32,
6
Fi
gu
re 3.
Pat
ch
An
ten
na
wit
h Q
uar
ter
-Wa
ve
Tra
nsf
orm
er
Fi
gu
re
4 s
h
o
w
s t
h
e
pr
op
ose
d
pat
c
h
ant
e
nna
,
w
h
i
c
h c
o
nsi
s
t
s
o
f
pat
c
h a
n
d
a m
i
crost
r
i
p
fe
ed l
i
n
e.
The
circuit was
fa
bricated using
micro-st
rip lines with
a FR
4
su
bstrate, th
en
o
b
serv
ed with th
e An
ritsu
37
369
D
Vector Net
w
ork Analyzer.
The antenna’s
ret
u
rn
lo
ss is figured
ou
t in
Figure 5. Th
e return
lo
ss is sm
alle
r –
15
dB
at
2.
45
G
H
z
m
eani
ng t
h
at
t
h
e
qui
t
e
go
o
d
m
a
t
c
hi
ng i
s
pe
rf
orm
e
d at
o
p
e
r
at
i
n
g
f
r
eq
ue
nc
y
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
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ECE
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8-8
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0
8
Design
and Fabrication
of Re
ctifying Ante
nna Ci
rcuit for W
i
reless Power
.... (Doan
Huu
Chuc)
1
525
Fi
gu
re
4.
Fa
bri
cat
i
on
of
t
h
e a
n
t
e
n
n
a
3.
RECTIFI
R
D
E
SIGN
Rectifier is a
no
n
lin
ear ci
rcu
i
t
,
wh
ich
co
nv
erts RF
power into DC
power.
The m
a
in cha
r
acteristic of
th
e op
eratin
g
effectiv
en
ess
of
rectenna is
its efficiency
, dete
rm
in
ed
b
y
lo
sses,
which
arise
du
ri
n
g
its
conve
r
sion
i
n
to DC powe
r. The
m
a
them
a
t
ical
relation
t
h
at desc
ribes
the RF-DC c
o
nversi
on efficiency i
s
g
i
v
e
n
b
y
(4
) [6]-
[
9
].
(4
)
with
V
R
(V
) t
h
e out
put
vol
t
a
g
e
dr
o
p
acr
oss t
h
e l
o
a
d
, R
(
) th
e lo
ad
v
a
lue, Pr
(W) th
e R
F
in
pu
t power
at th
e
receiving a
n
tenna’s
output
port, and PDC
t
h
e
DC power ente
ring at the
loa
d
R.
Fig
u
re
5
.
Th
e retu
rn
lo
ss cu
rves of th
e p
a
tch
an
tenn
a
The conversi
on efficie
n
cy of
t
h
e
rect
i
f
i
e
r de
pen
d
s
m
a
i
n
l
y
on a po
wer c
o
n
v
e
rsi
o
n de
vi
ce.
Acco
r
d
i
n
gl
y
,
t
h
e
di
o
d
e m
u
st
have
l
o
w
re
ver
s
e rec
o
very
t
i
me and the
conversi
on effici
ency m
u
st also
be
high.
A Schottky di
ode is chosen as
conversi
o
n
de
vi
ce fo
r t
h
e
de
si
gn
of r
ect
en
n
a
sy
st
em
i
n
t
h
e st
udy
[
3
]
-
[
5
]
.
In
ou
r
desi
g
n
a
H
S
M
S
2
8
2
0
Sch
o
t
t
k
y
di
o
d
e was us
ed
i
n
vol
t
a
ge
d
o
u
b
l
e
rect
i
f
i
e
r,
an
d has
a
vol
t
a
ge dr
o
p
of
3
4
0
m
V
.
Thi
s
l
o
w v
o
l
t
a
ge d
r
op
pr
o
v
i
d
es hi
g
h
s
w
i
t
c
hi
ng s
p
ee
d a
nd
bet
t
e
r sy
st
em
effi
ci
ency
. T
h
e
choi
ce
was m
a
de t
o
u
s
e H
S
M
S
2820
Scho
ttk
y d
i
od
e, wh
ich
h
a
s
th
e eq
u
i
v
a
len
t
cir
c
u
it p
a
r
a
m
e
t
e
r
s
as f
o
llow
s
, ser
i
es r
e
sistance RS
= 6
, zer
o bi
a
s
ju
nct
i
o
n capa
c
i
t
o
r C
j
0 = 0.
7
pF,
fo
rwa
r
d v
o
l
t
a
ge V
F
= 0.
34
V, a
nd
brea
kd
o
w
n
v
o
l
t
a
ge
VB
=
15
V.
Th
e vo
ltag
e
do
ub
le rectifier (VDR
) is an
a
m
p
l
i
t
ude am
pli
f
y
i
ng ci
rcui
t
t
h
at
uses dual
di
odes
.
Schem
a
t
i
c
of a do
ubl
e-
v
o
l
t
a
g
e
t
opol
ogy
i
s
sho
w
n i
n
Fi
gu
r
e
6. The v
o
l
t
a
ge d
o
u
b
l
e
rect
i
f
i
e
r i
s
com
posed of
a
peak rectifie
r form
ed by
di
ode D1 a
n
d ca
pa
citor C
1
a
n
d a
voltage
clam
p form
ed by
diode
D2 a
n
d capacitor
Evaluation Warning : The document was created with Spire.PDF for Python.
I
S
SN
:
2
088
-87
08
I
J
ECE
Vo
l. 6
,
N
o
. 4
,
Au
gu
st 2
016
:
15
22
–
1
528
1
526
C2
. A
du
al d
i
o
d
e
s vo
ltag
e
do
ub
le with
on
ly sin
g
l
e cap
acito
r is un
pop
u
l
ar bu
t th
e VDR is a well d
e
fin
e
d
si
ngl
e st
a
g
e
vo
l
t
a
ge d
o
u
b
l
e
t
h
at
do
u
b
l
i
n
g
t
h
e
am
pl
it
ude
of
i
n
p
u
t
si
gnal
s
[
2
]
,
[1
0]
.
To re
duce re
fl
ect
i
on l
o
ss as wel
l
as ensure
m
a
xim
u
m
po
wer t
r
a
n
sfe
r
, a
go
od i
m
pedan
ce
m
a
t
c
hi
ng
net
w
or
k has t
o
be real
i
zed
bet
w
ee
n t
h
e ant
e
n
n
a an
d t
h
e rect
i
f
i
e
r’s i
n
put
. Fi
r
s
t
,
t
h
e
di
ode
’s eq
ui
val
e
nt
im
pedances
w
e
re
m
easured
at
t
h
e
e
xpect
e
d
fre
que
ncy
ra
nge
(
2
.
0
- 2.
8
G
H
z)
as
s
h
o
w
n
i
n
Fi
g
u
re
7. The
fu
n
d
am
ent
a
l
im
pedance i
s
o
f
im
port
a
nce si
nce t
h
e
f
r
o
n
t
e
n
d
i
s
a t
u
ne
d ci
rcui
t
an
d t
h
e “
h
arm
oni
c i
m
pedance
s
”
are filtered
o
u
t
in
th
e app
licatio
n [8
].
Giv
e
n
th
e fact
th
at d
i
o
d
e
’s i
n
pu
t im
p
e
d
a
n
c
e is little b
it sen
s
itiv
e to th
e in
pu
t
p
o
wer, t
h
e m
a
tch
i
n
g
had
t
o
be m
a
de wi
t
h
a
fi
xe
d
i
n
p
u
t
p
o
w
er
[1
0]
. T
h
i
s
desi
gn
was m
o
re f
o
c
u
se
d o
n
t
h
e 1
0
dB
m
t
o
25
d
B
m
o
f
th
e inp
u
t
po
wer rang
e.
Fi
gu
re
6.
Sc
he
m
a
t
i
c
of a
do
u
b
l
e
-
vol
t
a
ge
t
o
p
o
l
o
gy
A si
n
g
l
e
-st
ub
m
a
t
c
hi
ng n
e
t
w
or
k wa
s desi
g
n
ed
usi
ng
Ad
v
a
nce De
si
g
n
S
y
st
em
(ADS) t
o
achi
e
ve a
go
o
d
im
pedan
ce
m
a
t
c
hi
ng b
e
t
w
een t
h
e el
em
ent
s
. The s
c
hem
a
t
i
c
of a VDR
i
s
sho
w
n i
n
Fi
gu
re
8. T
h
e
m
i
crost
r
i
p
l
i
n
e
s
re
qui
re
d
f
o
r
effi
ci
ent
c
h
ar
gi
ng
an
d i
m
peda
nce tra
n
s
f
orm
a
tion a
r
e s
h
orter as c
o
m
p
ared
to the
ot
he
r co
nfi
g
u
r
at
i
ons.
As a re
sul
t
,
t
h
i
s
co
nfi
g
u
r
at
i
o
n ha
s the p
o
t
en
tial to
allo
cate s
m
aller
foo
t
p
r
i
n
t. Th
e
m
e
ri
t
o
f
sm
aller fo
rm facto
r
is sig
n
i
fican
t b
ecau
s
e
m
u
ltip
le rect
if
iers are essential
in
recten
n
a
array. In
th
is circu
i
t
,
t
h
e m
i
crost
r
i
p
l
i
n
e TL2
an
d
TL3 a
r
e
use
d
f
o
r i
n
put
m
a
t
c
hi
ng a
n
d t
h
e
m
i
crost
r
i
p
l
i
n
e
T
L
4 i
s
use
d
fo
r
out
put
m
a
t
c
hi
ng. T
h
e
ci
rcui
t
was
d
e
si
gne
d,
si
m
u
lat
e
d an
d
opt
i
m
i
zed usi
n
g
AD
S, t
h
e
n
i
t
was fa
b
r
i
cat
ed
on
FR
4
sub
s
trate f
o
r
v
e
rification
.
Fi
gu
re
7.
D
o
ub
l
e
Di
o
d
e'
s im
pedance
s
f
r
eq
(
2
.
0
00
G
H
z
t
o
2
.
800
G
H
z
)
S(
1
,
1
)
m1
S(
2
,
2
)
m2
m1
f
r
eq=
S
(
1,
1)
=
0
.
704 /
-
109.
873
i
m
peda
n
c
e =
Z0 *
(
0
.
256 -
j
0
.
671)
2.
450G
H
z
m2
fr
e
q
=
S(
2,
2)
=
0
.
713 /
-
5
5
.
352
i
m
pe
da
n
c
e
=
Z0 *
(
0
.
706 -
j
1
.
6
8
1
)
2.
4
50G
H
z
Evaluation Warning : The document was created with Spire.PDF for Python.
I
J
ECE
I
S
SN
:
208
8-8
7
0
8
Design
and Fabrication
of Re
ctifying Ante
nna Ci
rcuit for W
i
reless Power
.... (Doan
Huu
Chuc)
1
527
Fig
u
r
e
8
.
Th
e sch
e
m
a
tic o
f
the vo
ltag
e
d
ouble r
ectif
ier
The l
a
y
out
a
n
d
fab
r
i
cat
i
on
of
t
h
e v
o
l
t
a
ge d
o
ubl
e rect
i
f
i
e
r are sh
o
w
n i
n
Fi
gu
re 9
.
The
di
m
e
nsi
on
o
f
th
e rectifier syste
m
is
3
.
5
cm
2.
5 cm
. The PC
B
(Pri
nt
ed
C
i
rcui
t
B
o
ar
d)
was m
a
nufact
ure
d
by
a com
put
e
r
-
cont
rol
l
e
d
m
a
chi
n
e
LPF
K
Pr
o
t
om
at
- C
4
0.
Fi
gu
re
9.
The
l
a
y
out
a
n
d
fa
bri
cat
i
on
of
t
h
e
v
o
l
t
a
ge
do
u
b
l
e
r
rect
i
f
i
e
r
The c
o
nve
r
sion efficiency is
m
easure
d
wit
h
res
p
ect
to
t
h
e rectifier lo
ad at rang
e of
10
d
B
m
to
2
5
dB
m
of i
n
p
u
t
po
we
r. T
h
e o
p
t
im
al
load resi
stance is around 810
f
o
r +
2
3dB
m
i
nput
po
wer at
t
h
e
fre
q
u
enc
y
of 2
.
4
5
GHz
. T
h
e m
easured ef
fi
ci
ency
val
u
es
are pl
ot
t
e
d i
n
Fi
gu
re 1
0
. Acc
o
r
d
i
n
gl
y
,
t
h
e m
a
xim
u
m
conversi
o
n
efficiency
of
71.5% is reac
he
d at 22d
Bm
o
f
in
pu
t po
wer. C
o
m
p
ared
to
t
h
e
v
o
ltage dou
b
l
er rectifier ci
rcu
it in
[1
1]
, t
h
i
s
c
o
n
f
i
g
u
r
at
i
o
n ha
s hi
ghe
r e
ffi
ci
ency
. Fr
om
Fi
gure
10
, as ca
n
be s
een t
h
at
t
h
e
co
nve
rsi
o
n e
ffi
ci
ency
in
creases un
til th
e inpu
t power
reach
e
s
23
d
B
m
,
th
en
co
nv
ersion
effi
cien
cy d
e
creases rap
i
d
l
y. Between
15dBm
and 25dBm
input
power, the c
onve
r
sion efficienc
y
exceeds
50%
. The
DC voltage output level
is 7.36
V @ 20
dB
m
,
10
.7
5 V @ 2
3
d
B
m
and 13
.2
4
V
@ 25
dB
m
i
nput
p
o
we
r res
p
ect
i
v
el
y
.
Co
m
p
ared
t
o
th
e vo
ltag
e
dou
b
l
e
rectifier
circu
it
i
n
[
2
]
and
[
1
1]
, t
h
i
s
co
nfi
g
u
r
at
i
o
n
has
hi
ghe
r
efficiency a
n
d
sm
a
ller size.
10
15
20
25
20
30
40
50
60
70
80
In
p
u
t
P
o
w
e
r
(
d
B
m
)
C
o
nve
r
si
o
n
ef
f
i
cie
n
cy
(
%
)
60
0 O
h
m
70
0 O
h
m
81
0 O
h
m
91
0 O
h
m
10
00
O
h
m
Fig
u
r
e
10
.
Measu
r
ed
D
C
vo
ltag
e
an
d
conv
er
sio
n
efficien
cy o
f
th
e vo
ltag
e
d
oub
ler rectifier
Evaluation Warning : The document was created with Spire.PDF for Python.
I
S
SN
:
2
088
-87
08
I
J
ECE
Vo
l. 6
,
N
o
. 4
,
Au
gu
st 2
016
:
15
22
–
1
528
1
528
4.
CO
NCL
USI
O
N
A
rectenna is
one
of the
key t
echnologies
for m
i
crowa
v
e
p
o
we
r t
r
ansm
i
ssi
on
an
d e
n
e
r
gy
ha
rve
s
t
i
n
g
.
The
rect
en
na c
i
rcui
t
t
o
pol
ogy
has
bee
n
st
u
d
i
e
d,
desi
gne
d a
n
d
fa
bri
cat
e
d
f
o
r
M
P
T sy
st
e
m
. A
m
i
crost
r
i
p
pat
c
h
an
tenn
a
is
d
e
si
g
n
e
d
on
FR4 su
bstrate. Th
e retu
rn
lo
ss
is smaller -1
5
d
B
, wh
ich
m
ean
s
th
at th
e i
m
p
e
d
a
n
c
e
m
a
t
c
hi
ng i
s
q
u
i
t
e
go
od
. I
n
ou
r v
o
l
t
a
ge d
o
u
b
l
e
rec
tifier, th
e HSMS282
0
Scho
ttk
y dio
d
e
was selected
to
d
e
sign
, sim
u
lat
i
o
n
and
fabricatio
n
the
v
o
ltage do
ub
le
r
ectifier circ
uit use
d
fo
r m
i
crowa
v
e
p
o
we
r tra
n
sm
issio
n
sy
st
em
. Goo
d
per
f
o
r
m
a
nces have
bee
n
o
b
t
a
i
n
ed i
n
t
e
rm
s
of R
F
-DC
c
o
n
v
ersi
on e
ffi
ci
e
n
cy
. I
n
t
h
i
s
w
o
r
k
,
we
have
p
r
op
ose
d
a 7
1
.
5
% c
o
nv
ersi
o
n
e
ffi
ci
en
cy
rect
i
f
i
e
r at
i
n
p
u
t
po
wer
l
e
v
e
l
22
dB
m
.
In
vi
ew
of
t
h
ese
r
e
sul
t
s
,
in
fu
ture
work
, th
e
o
b
j
ectiv
e is to
i
n
crease
the rectenna
pe
rform
a
nce.
ACKNOWLE
DGE
M
ENTS
Thi
s
w
o
r
k
has
been sp
o
n
so
r
e
d by
Vi
et
nam
Nat
i
onal
U
n
i
v
ersi
t
y
, Ha
noi
(VN
U
)
,
u
nde
r
Pro
j
ect
No
.
QG
.1
5.
2
7
.
REFERE
NC
ES
[1]
N. Shinohar
a
, “Rectennas for
mi
crowave power
transmission,”
I
E
ICE Ele
c
troni
c
s
Express
, vo
l/is
sue: 10(21),
201
3.
[2]
W.
S.
Ye
oh,
“
W
i
re
le
ss powe
r
tra
n
smissi
on
(WPT
) application at 2.4 GHz in
common network,” RMIT University
,
Doctor of
Philosoph
y
’
s
Thesis,
March 2010
.
[3]
D.
Zhao,
et a
l
.,
“
M
ultiple
-In
put Single-Out
put W
i
rel
e
ss Power Transm
ission S
y
stem
f
o
r Coal Min
e
,
”
TELKOMNIKA Indonesian Journ
a
l
of Electrical
Engineering
, vol/issue: 12(6)
, pp
. 4572-4578, 201
4.
[4]
D.
Zhao,
et al.
,
“
D
esign and Sim
u
lation of M
u
ltipl
e
Coil Mo
de
l for W
i
rel
e
ss Power Transm
ission Sy
stem
,
”
TELKOMNIKA Indonesian Journ
a
l
of Electrical
Engineering
, vol/issue: 12(6)
, pp
. 4166-4177, 201
4.
[5]
Z. Harouni,
et al.
, “Efficient 2
.
45 GHz Rectenna Design with
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BIOGRAP
HI
ES OF
AUTH
ORS
Doan Huu Chuc was born in Hai Phong City
, Vietna
m, in 1978
.
He received th
e
B.S. and M.S.
degrees in
engin
eering
electron
i
cs from the Vi
etn
a
m National University
(VNU),
Hanoi in 2000
and 2007, respectiv
ely
.
He is a
Lecturer of Dep
a
rtment of Electrical a
nd Electro
n
ics, Hai Phong
Private University
.
He is
currently
pursuing the
Ph.
D
.
degree in
electronic engineering
at VNU,
where his
dis
s
e
r
t
ation
is
focus
e
d
on m
i
crowave
circu
it d
e
s
i
gns
f
o
r wirel
e
s
s
power tr
ans
m
is
s
i
on
and high
power
semiconductor
amp
lifiers. Email:
chucdh@hpu
.ed
u
.vn
Assoc. Prof. Bach Gia Duong was born in Ha Dong
Dist, Hanoi,
Viet Nam, in 19
50. He receiv
e
d
the B.S degr
ee in radio ph
y
s
ics
in 1972 and the Ph.D. degr
ee in w
i
reless ph
y
s
ics fr
om University
of Science, in
1988. Since
2006, he is a Lectu
r
er and
Head of Electronics and
Telecommunication Center
, University
of En
g
i
neer
ing and Technolog
y
,
Vietnam National
University
. He
is the autho
r
of
thr
ee books
and mo
re th
an 80
articles. His research
f
o
cuses on RF
Analog Signal
Processing, RF chip d
e
sign, R
a
dar
Engineerin
g and Techno
lo
g
y
, Automatic
Control.
Email: duongbg@vnu.edu.vn
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