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I
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an
d
h
ig
h
er
-
k
g
ate
d
ielec
tr
ic
m
ater
ial,
Fin
F
E
T
’
s
ac
h
iev
e
b
etter
co
n
tr
o
l
o
v
er
th
r
esh
o
ld
v
o
ltag
e
v
ar
iatio
n
s
,
r
ed
u
cin
g
leak
ag
e
p
o
wer
an
d
im
p
r
o
v
i
n
g
s
witch
in
g
p
er
f
o
r
m
an
c
e.
I
t
h
as
b
ee
n
o
b
s
er
v
ed
th
at
th
e
s
ig
n
if
ican
t
co
n
tr
o
l
o
v
er
g
ate
an
d
h
ig
h
er
I
o
n
/I
o
f
f
r
atio
an
d
im
p
r
o
v
ed
s
u
b
t
h
r
esh
o
ld
s
lo
p
e
[
7
]
–
[
1
2
]
.
Fin
FET
-
b
ased
C
MO
S
in
v
er
ter
s
ac
h
iev
e
a
m
ax
im
u
m
v
o
ltag
e
g
ain
,
c
o
n
f
ir
m
in
g
th
eir
s
u
itab
ilit
y
f
o
r
h
ig
h
-
s
p
ee
d
a
n
d
lo
w
p
o
w
er
s
em
ico
n
d
u
cto
r
ap
p
licatio
n
s
[
1
3
]
,
[
1
4
]
.
I
n
d
i
g
ital
lo
g
ic
d
esig
n
,
Fin
FET
b
ased
NAND
an
d
NOR
g
ates
h
av
e
d
em
o
n
s
tr
ated
b
etter
im
p
r
o
v
em
e
n
ts
in
p
o
wer
r
ed
u
cti
o
n
a
n
d
d
elay
r
ed
u
ctio
n
co
m
p
ar
ed
to
co
n
v
en
tio
n
al
C
MO
S
lo
g
ic
g
ates.
B
etter
elec
tr
o
s
tatic
co
n
tr
o
l
o
f
Fin
FET
s
m
in
im
izes
leak
ag
e
cu
r
r
en
t,
en
h
an
cin
g
m
e
m
o
r
y
s
tab
ilit
y
an
d
ef
f
icien
cy
[
1
5
]
–
[
1
8
]
.
L
o
w
-
th
r
esh
o
ld
v
o
ltag
e
(
L
VT
)
Fin
FET
an
d
lo
w
-
p
o
wer
s
tack
ed
(
L
PS
)
Fin
FET
d
o
m
in
o
d
esig
n
r
ed
u
ce
s
s
tan
d
b
y
p
o
wer
b
y
6
3
.
3
%
an
d
im
p
r
o
v
es
p
o
wer
–
d
elay
p
r
o
d
u
ct
(
PDP)
b
y
8
1
.
9
7
%
f
o
r
8
-
in
p
u
t
OR
g
ates,
m
ak
in
g
it
a
s
u
itab
le
o
p
tio
n
f
o
r
en
e
r
g
y
-
ef
f
icien
t
V
L
SI
im
p
lem
en
tatio
n
s
[
1
9
]
–
[
2
1
]
.
T
h
e
in
tr
o
d
u
ctio
n
o
f
a
s
elec
tiv
e
ep
itax
ial
p
r
o
ce
s
s
f
o
r
m
er
g
in
g
in
d
iv
id
u
al
f
in
s
en
h
an
ce
s
s
er
ies
r
esis
tan
ce
r
ed
u
ctio
n
,
im
p
r
o
v
in
g
Fin
FET
s
ca
lab
ilit
y
f
o
r
f
u
tu
r
e
tech
n
o
lo
g
y
n
o
d
es
[
2
2
]
–
[
2
5
]
.
Ov
er
all
liter
atu
r
e
r
ev
iew
tells
th
at
Fin
FET
tech
n
o
lo
g
y
is
a
n
ee
d
o
f
h
o
u
r
f
o
r
ad
v
a
n
ce
d
s
em
ico
n
d
u
cter
b
ased
d
esig
n
co
m
p
ar
e
d
to
p
lan
ar
C
MO
S
wi
th
r
esp
ec
t to
h
ig
h
p
er
f
o
r
m
an
ce
,
l
o
w
p
o
wer
a
n
d
ar
ea
[
2
6
]
–
[
3
4
]
.
T
h
is
r
esear
ch
wo
r
k
f
o
c
u
s
es
o
n
d
esig
n
in
g
o
f
a
Fin
FET
-
b
ased
in
v
er
ter
u
s
in
g
a
h
i
g
h
-
th
r
esh
o
l
d
v
o
ltag
e
(
HVT
)
1
8
n
m
n
o
d
e
Fin
FET
wh
ich
ac
ts
as
a
b
asic
b
u
ild
in
g
b
lo
ck
f
o
r
f
u
r
th
er
d
esig
n
o
f
lo
g
ical
an
d
ar
ith
m
etic
cir
cu
its
.
T
h
e
o
b
jectiv
e
is
to
co
n
s
tr
u
ct
u
n
iv
e
r
s
al
lo
g
ic
g
ates
u
s
in
g
Fin
FET
b
ased
in
v
er
ter
,
an
d
co
m
p
ar
e
th
ei
r
p
er
f
o
r
m
an
ce
with
co
n
v
e
n
tio
n
al
C
MO
S
cir
cu
its
.
T
h
e
s
tu
d
y
aim
s
to
an
aly
ze
cr
itical
p
er
f
o
r
m
an
ce
p
ar
am
eter
s
s
u
ch
as
p
o
wer
d
is
s
ip
atio
n
,
p
r
o
p
ag
atio
n
d
elay
b
y
tak
in
g
ad
v
a
n
tag
e
o
f
Fin
FET
tec
h
n
o
lo
g
y
f
o
r
en
er
g
y
-
e
f
f
icien
t
d
ig
ital
s
y
s
tem
d
esig
n
.
T
h
e
ex
p
ec
ted
o
u
tco
m
e
o
f
th
is
wo
r
k
in
clu
d
es
a
co
m
p
r
e
h
en
s
iv
e
p
er
f
o
r
m
an
ce
ev
alu
atio
n
o
f
Fin
FET
-
b
ased
lo
g
ic
g
ates
,
d
em
o
n
s
tr
atin
g
im
p
r
o
v
e
m
en
t
s
o
v
er
co
n
v
e
n
tio
n
al
co
m
p
lem
en
tar
y
MO
SF
E
T
cir
cu
its
.
T
h
is
wo
r
k
aim
s
to
estab
lis
h
Hv
t
-
Fin
FET
tech
n
o
lo
g
y
as
a
v
iab
le
alter
n
ativ
e
f
o
r
n
e
x
t
-
g
en
er
atio
n
lo
w
-
p
o
wer
d
ig
ital c
ir
c
u
its
.
T
h
is
wo
r
k
is
d
etailed
as
f
o
llo
ws:
Sectio
n
1
in
tr
o
d
u
ctio
n
,
d
i
s
cu
s
s
es
m
o
tiv
atio
n
f
o
r
th
e
s
el
ec
tio
n
o
f
p
r
o
b
lem
s
tatem
en
t
with
r
elate
d
wo
r
k
,
h
ig
h
li
g
h
tin
g
p
r
io
r
r
esear
ch
o
n
Fin
FET
ap
p
licatio
n
s
.
Sectio
n
2
m
eth
o
d
,
d
etails
th
e
m
eth
o
d
o
lo
g
y
,
in
clu
d
in
g
th
e
Hv
t
-
Fin
FET
in
v
e
r
ter
,
NAND
an
d
NOR
g
ate
d
esig
n
s
.
Sectio
n
3
r
esu
lts
an
d
d
is
cu
s
s
io
n
,
d
etails
s
im
u
latio
n
r
esu
lts
an
d
p
er
f
o
r
m
a
n
ce
an
aly
s
is
,
s
ec
tio
n
4
co
n
cl
u
s
io
n
an
d
f
u
r
th
er
en
h
an
ce
m
e
n
t
co
n
clu
s
io
n
o
f
t
h
e
wo
r
k
an
d
f
u
t
u
r
e
r
esear
c
h
.
2.
M
E
T
H
O
D
Hv
t
-
Fin
FET
d
ev
ices,
b
ased
o
n
1
8
n
m
tech
n
o
lo
g
y
,
f
ea
tu
r
e
a
f
in
-
s
h
ap
e
d
s
tr
u
ctu
r
e
an
d
h
ig
h
-
k
d
ielec
tr
ic
to
en
h
an
ce
g
ate
c
o
n
tr
o
l
an
d
r
ed
u
ce
leak
ag
e.
Simu
latio
n
s
etu
p
in
clu
d
es
s
ch
em
atic
d
esig
n
with
Hv
t
-
Fin
FET
d
ev
ice
with
o
p
tim
ize
d
p
ar
a
m
eter
s
ca
lcu
lated
f
r
o
m
m
ath
em
atica
l
m
o
d
el,
test
b
en
c
h
,
an
d
wav
e
f
o
r
m
s
in
ca
d
en
ce
v
ir
tu
o
s
o
to
o
l.
T
h
eir
u
s
e
in
in
v
er
ter
,
NAND
,
an
d
NOR g
ate
d
esig
n
s
lead
to
lo
wer
p
o
wer
co
n
s
u
m
p
tio
n
,
r
ed
u
ce
d
p
r
o
p
ag
atio
n
d
elay
,
a
n
d
b
etter
s
u
itab
ilit
y
f
o
r
ad
v
a
n
ce
d
VL
SI
ap
p
licatio
n
s
.
2
.
1
.
Dev
ice
s
t
ruct
ure
a
nd
pa
ra
m
et
er
s
T
h
e
m
ajo
r
g
eo
m
etr
ic
p
ar
a
m
eter
s
o
f
th
is
Fin
FET
as
s
h
o
wn
in
i
T
ab
le
1
in
clu
d
e
a
f
in
wid
th
o
f
8
n
m
,
a
f
in
h
eig
h
t
o
f
2
0
n
m
,
an
d
a
g
at
e
wid
th
o
f
2
0
n
m
,
with
a
s
u
p
p
ly
v
o
ltag
e
V
DD
o
f
0
.
9
V
to
en
s
u
r
e
r
ed
u
ce
d
p
o
wer
d
is
s
ip
atio
n
an
d
h
ig
h
-
s
p
ee
d
o
p
er
atio
n
.
Fu
r
th
er
,
t
h
e
d
ev
ice
in
co
r
p
o
r
ates
a
lo
ad
ca
p
ac
itan
ce
C
L
o
f
1
.
0
f
F,
wh
ich
p
lay
s
a
cr
itical
p
ar
t in
d
eter
m
i
n
in
g
d
ela
y
an
d
p
o
wer
c
o
n
s
u
m
p
tio
n
.
2
.
2
.
F
inFE
T
elec
t
rica
l c
ha
ra
ct
er
is
t
ics
2
.
2
.
1
.
N
-
c
ha
nn
el
F
inFE
T
T
h
e
elec
tr
ical
ch
ar
ac
ter
is
tics
o
f
th
e
n
-
ch
an
n
el
Hv
t
-
Fin
FET
is
an
aly
ze
d
b
y
its
d
r
ain
an
d
tr
an
s
f
er
ch
ar
ac
ter
is
tics
.
T
h
e
ch
a
r
ac
ter
i
s
tics
f
r
o
m
Fig
u
r
e
s
1
(
a)
to
(
c)
p
r
o
v
id
e
in
f
o
r
m
atio
n
ab
o
u
t
d
r
a
in
cu
r
r
en
t
v
ar
iatio
n
with
b
ias
v
o
ltag
es,
th
r
esh
o
l
d
v
o
ltag
e
v
ar
iatio
n
,
an
d
o
v
er
all
d
ev
ice
p
er
f
o
r
m
an
ce
u
n
d
er
d
if
f
er
en
t
b
ias
co
n
d
itio
n
s
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J E
lec
&
C
o
m
p
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n
g
I
SS
N:
2088
-
8
7
0
8
Lo
w
-
p
o
w
er a
n
d
r
ed
u
ce
d
d
el
a
y
in
in
ve
r
ter a
n
d
u
n
ivers
a
l lo
g
ic
…
(
V
ee
r
a
p
p
a
C
h
ikka
g
o
u
d
a
r
)
5195
T
ab
le
1
.
Geo
m
etr
ic
a
n
d
o
p
er
at
in
g
p
ar
am
ete
r
s
o
f
th
e
1
8
n
m
H
v
t
-
Fin
FET
P
a
r
a
me
t
e
r
V
a
l
u
e
F
i
n
h
e
i
g
h
t
(
H
fi
n
)
20
nm
F
i
n
w
i
d
t
h
(
W
fi
n
)
8
nm
O
x
i
d
e
t
h
i
c
k
n
e
ss
(
t
ox
)
1
.
5
nm
S
u
p
p
l
y
v
o
l
t
a
g
e
(
V
DD
)
0
.
9
V
G
a
t
e
w
i
d
t
h
(
W
ga
t
e
)
20
nm
Lo
a
d
c
a
p
a
c
i
t
a
n
c
e
(
C
L
)
1
.
0
fF
(
a)
(
b
)
(
c)
Fig
u
r
e
1
.
D
r
ain
cu
r
r
e
n
t v
ar
iati
o
n
(
a)
s
ch
e
m
atic
f
o
r
N
c
h
an
n
e
l H
v
t
-
Fin
FET
d
r
ain
an
d
tr
an
s
f
er
ch
ar
ac
ter
is
tics
,
(
b
)
I
d
v
s
V
ds
f
o
r
v
ar
io
u
s
V
gs
,
an
d
(
c)
I
d
v
s
V
gs
2
.
2
.
2
.
P
-
c
ha
nn
el
F
inFE
T
T
h
e
p
-
c
h
an
n
el
Hv
t
-
Fin
FET
e
x
h
ib
its
co
m
p
lem
e
n
tar
y
b
eh
a
v
i
o
r
to
its
n
-
ch
a
n
n
el
c
o
u
n
ter
p
ar
t
as
s
h
o
wn
in
Fig
u
r
e
s
2
(
a)
to
(
c)
,
cr
u
cial
f
o
r
d
esig
n
in
g
ef
f
icien
t
C
MO
S
lo
g
ic
cir
cu
its
.
T
h
e
d
r
ain
an
d
tr
a
n
s
f
er
ch
ar
ac
ter
is
tics
p
r
o
v
id
e
in
f
o
r
m
atio
n
ab
o
u
t
p
er
f
o
r
m
an
ce
p
ar
a
m
eter
s
s
u
ch
as
m
o
b
ilit
y
µ,
th
r
esh
o
ld
v
o
lta
g
e
Vt,
an
d
leak
ag
e
cu
r
r
e
n
t.
2
.
3
.
Fi
n
FET
inv
er
t
er
des
ig
n
T
h
e
Fin
FET
in
v
er
ter
co
n
s
is
ts
o
f
a
h
ig
h
-
th
r
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I
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N
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2
0
8
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7
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Decem
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(
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Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J E
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&
C
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m
p
E
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g
I
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N:
2088
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8
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0
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ased
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u
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4
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ased
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NOR g
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r
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in
T
ab
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3
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8
7
0
8
I
n
t J E
lec
&
C
o
m
p
E
n
g
,
Vo
l.
15
,
No
.
6
,
Decem
b
e
r
20
25
:
5
1
9
3
-
5
2
0
4
5198
Fig
u
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5
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Sch
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ab
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3
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ased
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Evaluation Warning : The document was created with Spire.PDF for Python.
I
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C
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N:
2088
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ased
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p
a
g
atio
n
d
ela
y
(
τ
)
is
d
eter
m
in
ed
u
s
in
g
t
h
e
eq
u
atio
n
(
1
)
:
=
×
=
(
1
.
0
×
10
−
15
)
×
(
1
.
2
)
2
.
94
×
10
−
6
=
4
.
08
=
×
×
2
×
=
0
.
2
×
(
1
.
0
×
10
−
15
)
×
(
1
.
2
)
2
×
(
1
×
10
9
)
=
2
.
89
=
×
=
(
100
×
10
−
9
)
×
(
1
.
2
)
=
120
2
.
5
.
4
.
Hvt
-
F
inFE
T
NO
R
g
a
t
e
a
na
ly
s
is
Fo
r
th
e
Hv
t
-
Fin
FET
NOR
g
ate,
th
e
p
r
o
p
ag
atio
n
d
elay
is
ca
lcu
lated
u
s
in
g
th
e
E
lm
o
r
e
d
el
ay
m
o
d
el,
g
iv
en
b
y
:
t
d
el
ay
=
0
.
69
×
R
t
o
t
al
×
C
t
o
t
al
=
(
0
.
69
)
×
(
500Ω
)
×
(
4
×
10
−
12
F
)
=
1
.
38μ
s
P
d
y
n
am
i
c
=
α
×
C
l
o
ad
×
VDD
2
×
f
=
(
0
.
2
)
×
(
4
×
10
−
12
F
)
×
(
1
.
2V
)
2
×
(
1
×
10
9
Hz
)
=
20mW
.
=
l
e
a
k
a
ge
×
=
(
133
.
42
×
10
−
9
A
)
×
(
1
.
2V
)
=
160
.
10n
W
.
(
4
)
3.
RE
SU
L
T
S AN
D
D
I
SCU
SS
I
O
N
I
n
th
is
s
tu
d
y
,
th
e
p
r
o
p
ag
atio
n
d
elay
,
tr
an
s
ien
t
an
d
DC
p
o
wer
co
n
s
u
m
p
tio
n
o
f
Hv
t
-
Fin
FET
-
b
ased
in
v
er
ter
s
,
NAND
,
an
d
NOR
g
ates
ar
e
ev
alu
ated
an
d
co
m
p
ar
ed
with
co
n
v
en
tio
n
al
C
MO
S
co
u
n
ter
p
a
r
ts
.
T
h
e
an
aly
s
is
in
clu
d
es
b
o
th
s
im
u
lated
an
d
t
h
eo
r
etica
l
r
esu
lts
,
h
ig
h
lig
h
tin
g
th
e
im
p
ac
t
o
f
p
ar
asit
ic
ef
f
ec
ts
an
d
p
r
o
ce
s
s
v
ar
iatio
n
s
.
3
.
1
.
P
r
o
pa
g
a
t
io
n
d
ela
y
o
f
H
v
t
-
F
inFE
T
i
nv
er
t
er
T
h
e
d
elay
o
f
th
e
Hv
t
-
Fin
FET
in
v
er
ter
as
s
h
o
wn
in
Fig
u
r
e
6
was
m
ea
s
u
r
ed
to
b
e
2
7
.
2
p
s
i
n
ca
d
en
ce
v
ir
tu
o
s
o
,
wh
er
ea
s
th
e
th
e
o
r
eti
ca
lly
ca
lcu
lated
v
alu
e
was
2
5
p
s
.
T
h
is
s
lig
h
t
d
ev
iatio
n
ar
is
es
d
u
e
to
p
ar
asit
ic
r
esis
tan
ce
s
,
in
ter
co
n
n
ec
t
ca
p
a
citan
ce
s
,
an
d
p
r
o
ce
s
s
v
ar
iatio
n
s
in
th
e
s
im
u
latio
n
en
v
ir
o
n
m
en
t.
Un
lik
e
C
MO
S
in
v
er
ter
s
,
wh
ic
h
s
u
f
f
er
f
r
o
m
h
ig
h
er
p
ar
asit
ic
ca
p
ac
ita
n
ce
a
n
d
in
c
r
ea
s
ed
lea
k
ag
e
cu
r
r
e
n
ts
,
Fin
FET
in
v
er
ter
s
m
ain
tain
a
s
tab
le
th
r
esh
o
ld
v
o
l
tag
e
(
Vth
)
en
s
u
r
i
n
g
c
o
n
s
is
ten
t a
n
d
ef
f
icien
t
p
er
f
o
r
m
an
ce
.
3
.
2
.
T
ra
ns
ient
a
nd
DC
po
we
r
co
ns
u
mp
t
io
n o
f
H
v
t
-
F
inFE
T
inv
er
t
er
T
h
e
Hv
t
-
Fin
FET
in
v
er
te
r
tr
an
s
ien
t
an
d
DC
r
esp
o
n
s
e
is
s
h
o
wn
in
Fig
u
r
e
s
7
(
a
)
an
d
7
(
b
)
.
T
h
e
tr
an
s
ien
t
an
d
DC
p
o
wer
co
n
s
u
m
p
tio
n
m
ea
s
u
r
ed
f
r
o
m
Fig
u
r
e
s
7
(
c)
,
an
d
7
(
d
)
was
r
ec
o
r
d
ed
as
6
9
4
.
2
9
5
n
W
,
wh
ile
th
e
DC
p
o
wer
co
n
s
u
m
p
tio
n
was
f
o
u
n
d
to
b
e
1
3
7
.
5
9
4
n
W
.
T
h
e
th
eo
r
etica
l
v
alu
es
f
o
r
d
y
n
am
i
c
an
d
s
tatic
p
o
wer
wer
e
ca
lcu
lated
as 0
.
3
5
μ
W
an
d
0
.
1
μ
W
,
r
esp
ec
tiv
ely
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8
7
0
8
I
n
t J E
lec
&
C
o
m
p
E
n
g
,
Vo
l.
15
,
No
.
6
,
Decem
b
e
r
20
25
:
5
1
9
3
-
5
2
0
4
5200
Fig
u
r
e
6
.
Dela
y
o
f
Hv
t
-
Fin
FE
T
in
v
er
ter
(
a)
(
b
)
(
c)
(
d
)
Fig
u
r
e
7
.
Hv
t
-
Fin
FET
in
v
er
ter
(
a)
tr
an
s
ien
t r
esp
o
n
s
e
(
b
)
DC
r
esp
o
n
s
e
(
c)
tr
a
n
s
ien
t p
o
wer
(
d
)
DC
p
o
wer
3
.
2
.
2
.
Hvt
-
F
inFE
T
NAND
g
a
t
e
perf
o
rma
nce
T
h
e
p
r
o
p
ag
atio
n
d
elay
o
f
th
e
Fin
FET
NAND
g
ate
was
m
ea
s
u
r
ed
as
4
.
9
2
n
s
,
wh
er
ea
s
th
e
th
eo
r
etica
l
d
elay
was
4
.
0
8
n
s
.
T
h
e
ex
tr
ac
t
ed
d
elay
v
alu
e
is
p
r
esen
te
d
in
Fig
u
r
e
8
(
a)
,
c
o
n
f
ir
m
in
g
th
e
e
x
p
ec
ted
v
ar
iatio
n
i
n
d
elay
u
n
d
er
p
r
ac
tical
co
n
d
itio
n
s
.
T
h
e
d
y
n
am
ic
p
o
wer
co
n
s
u
m
p
tio
n
r
ec
o
r
d
e
d
in
s
im
u
lat
io
n
s
was
1
.
3
3
μ
W
,
co
m
p
ar
ed
to
t
h
e
th
eo
r
etica
l
v
alu
e
o
f
2
.
8
8
μ
W
.
T
h
e
tr
an
s
ien
t
p
o
wer
ch
ar
ac
ter
is
tics
ar
e
illu
s
tr
ated
in
Fig
u
r
e
8
(
b
)
.
T
h
e
s
tatic
p
o
we
r
d
is
s
ip
atio
n
was
m
ea
s
u
r
e
d
a
t
2
.
1
5
n
W
,
alig
n
in
g
clo
s
ely
with
th
e
th
eo
r
etica
l
esti
m
atio
n
o
f
1
2
0
m
W
.
T
h
e
D
C
p
o
wer
d
is
s
ip
atio
n
cu
r
v
e
is
p
r
esen
ted
in
Fig
u
r
e
8
(
c)
.
3
.
2
.
3
.
Hvt
-
F
inFE
T
NO
R
g
a
t
e
perf
o
rm
a
nce
Hv
t
-
Fin
FET
b
ased
NOR
g
a
te
ex
h
ib
ited
p
r
o
p
a
g
atio
n
d
el
ay
o
f
2
.
8
5
p
s
,
wh
ile
th
e
t
h
eo
r
etica
lly
ca
lcu
lated
d
elay
was
1
.
3
8
μ
s
.
T
h
e
ex
tr
ac
ted
d
elay
v
alu
e
is
p
r
esen
ted
in
Fig
u
r
e
9
(
a)
,
c
o
n
f
ir
m
in
g
t
h
e
d
elay
ch
ar
ac
ter
is
tics
.
in
p
r
ac
tical
co
n
d
itio
n
s
.
T
h
e
tr
an
s
ien
t
p
o
wer
co
n
s
u
m
p
tio
n
was
m
ea
s
u
r
ed
as
1
.
2
2
μ
W
,
co
m
p
ar
ed
to
th
e
th
eo
r
etica
l
v
alu
e
o
f
2
0
m
W
.
T
h
is
tr
an
s
ien
t
p
o
wer
b
e
h
av
io
r
is
illu
s
tr
ated
in
Fig
u
r
e
9
(
b
)
.
T
h
e
DC
p
o
wer
d
is
s
ip
atio
n
was
m
ea
s
u
r
ed
at
1
3
3
.
4
2
n
W
,
s
li
g
h
tly
lo
wer
th
an
t
h
e
th
eo
r
et
ical
esti
m
atio
n
o
f
1
6
0
.
1
n
W
.
T
h
e
DC
p
o
wer
d
is
s
ip
atio
n
cu
r
v
e
is
p
r
esen
ted
in
Fig
u
r
e
9
(
c)
.
ti
me(
ns
)
DC
(
v)
w
(
uw
)
w
(
uw
)
Vout
(
v)
W
(
uw)
ti
me(
ns
)
ti
me(
ns
)
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J E
lec
&
C
o
m
p
E
n
g
I
SS
N:
2088
-
8
7
0
8
Lo
w
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p
o
w
er a
n
d
r
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u
ce
d
d
el
a
y
in
in
ve
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ter a
n
d
u
n
ivers
a
l lo
g
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…
(
V
ee
r
a
p
p
a
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h
ikka
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o
u
d
a
r
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5201
(
a)
(
b
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c)
Fig
u
r
e
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.
Hv
t
-
Fin
FET
NAND
g
ate
(
a)
d
ela
y
,
(
b
)
t
r
an
s
ien
t p
o
wer
,
an
d
(
c
)
DC
p
o
wer
(
a)
(
b
)
(
c)
Fig
u
r
e
9
.
Hv
t
-
Fin
FET
NOR g
ate
(
a)
d
elay
,
(
b
)
t
r
an
s
ien
t p
o
w
er
,
an
d
(
c)
DC
p
o
wer
3
.
3
.
P
er
f
o
r
m
a
nce
co
m
pa
riso
n
o
f
H
v
t
-
F
inFE
T
a
nd
C
M
O
S
lo
g
ic
g
a
t
es
Hv
t
-
Fin
FET
1
8
n
m
tech
n
o
lo
g
y
d
em
o
n
s
tr
ates
s
ig
n
if
ican
t
im
p
r
o
v
em
e
n
ts
o
v
e
r
C
MO
S
4
5
n
m
in
v
e
r
ter
s
an
d
lo
g
ic
g
ates
in
ter
m
s
o
f
p
o
wer
e
f
f
icien
cy
an
d
r
ed
u
c
ed
d
elay
as
s
h
o
wn
in
T
ab
le
4
.
T
h
e
m
ea
s
u
r
e
d
p
r
o
p
a
g
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n
d
elay
s
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d
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wer
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is
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ip
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atch
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iatio
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u
e
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s
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r
t
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er
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th
ese
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n
iv
er
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g
ates
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a
v
e
m
u
c
h
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p
r
o
p
ag
atio
n
d
elay
s
,
in
d
icatin
g
im
p
r
o
v
ed
s
witch
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g
p
er
f
o
r
m
an
ce
as in
d
ic
ated
in
T
ab
le
5
.
t
i
m
e
(
n
s)
w
(
uw
)
ti
me(
ns
)
DC
(
V)
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
0
8
8
-
8
7
0
8
I
n
t J E
lec
&
C
o
m
p
E
n
g
,
Vo
l.
15
,
No
.
6
,
Decem
b
e
r
20
25
:
5
1
9
3
-
5
2
0
4
5202
T
ab
le
4
.
I
n
v
er
ter
s
M
e
t
r
i
c
H
v
t
-
F
i
n
F
ET
C
M
O
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u
p
p
l
y
V
o
l
t
a
g
e
(
V
D
D
)
0
.
9
V
1
.
1
V
D
y
n
a
mi
c
P
o
w
e
r
0
.
3
5
μW
2
.
5
μW
S
t
a
t
i
c
P
o
w
e
r
0
.
1
μW
0
.
8
μW
P
r
o
p
a
g
a
t
i
o
n
D
e
l
a
y
(
τ)
2
7
.
2
p
s
7
5
p
s
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o
n
/
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o
f
f
R
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t
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NAND
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d
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g
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G
a
t
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e
t
r
i
c
C
M
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V
T
F
i
n
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ET
To
t
a
l
P
o
w
e
r
4
.
5
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NAND
P
r
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g
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t
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o
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e
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s
4
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To
t
a
l
P
o
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e
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3
.
9
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1
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2
2
μW
NOR
P
r
o
p
a
g
a
t
i
o
n
D
e
l
a
y
9
.
8
p
s
2
.
8
5
ps
4.
CO
NCLU
SI
O
N
AND
F
UR
T
H
E
R
E
NH
AN
CE
M
E
NT
Fin
FET
tech
n
o
lo
g
y
with
h
ig
h
th
r
esh
o
ld
v
o
ltag
e
v
a
r
iatio
n
h
a
s
p
r
o
v
ed
to
b
e
an
ef
f
icien
t
alte
r
n
ativ
e
to
co
n
v
en
tio
n
al
C
MO
S.
C
o
m
p
ar
ed
with
C
MO
S
tech
n
o
lo
g
y
,
Pr
o
p
o
s
ed
Hv
t
-
Fin
FET
in
v
er
ter
o
b
tain
ed
p
o
wer
an
d
p
r
o
p
a
g
atio
n
d
elay
r
ed
u
ctio
n
o
f
1
3
.
6
3
%
an
d
3
3
.
3
3
%
r
esp
ec
tiv
ely
.
T
h
e
p
o
wer
a
n
d
d
el
ay
o
p
tim
izatio
n
o
f
2
9
.
1
0
%
an
d
1
1
.
8
%
h
a
v
e
b
ee
n
o
b
s
er
v
ed
in
th
e
lo
w
p
o
wer
N
AND
g
ate.
NOR
g
ate
ex
h
ib
its
r
ed
u
ctio
n
o
f
p
o
wer
co
n
s
u
m
p
tio
n
a
n
d
d
elay
b
y
3
1
.
2
8
%
an
d
2
9
.
0
8
%
r
esp
ec
tiv
ely
.
T
h
e
r
esu
lts
d
em
o
n
s
tr
ate
th
at
Fin
FET
-
b
ased
cir
cu
its
co
n
s
u
m
e
s
u
b
s
tan
tially
less
p
o
wer
,
m
ak
in
g
th
em
id
ea
l
f
o
r
lo
w
-
p
o
wer
,
h
ig
h
-
p
er
f
o
r
m
an
ce
VL
SI
ap
p
licatio
n
s
wh
en
co
m
p
a
r
ed
to
C
MO
S
4
5
n
m
tech
n
o
lo
g
y
.
T
h
e
I
o
n
/I
o
f
f
r
atio
o
f
Hv
t
-
Fin
FET
(
≈
1
0
⁶
)
is
s
ig
n
if
ican
tly
h
ig
h
er
th
a
n
C
MO
S
(
≈
1
0
⁴)
,
en
s
u
r
in
g
b
ett
er
d
r
iv
e
cu
r
r
en
t
an
d
r
e
d
u
c
ed
leak
ag
e.
T
h
ese
ad
v
an
ce
m
e
n
ts
co
n
f
ir
m
Hv
t
-
Fi
n
FET
’
s
s
u
p
er
io
r
elec
tr
o
s
tatic
co
n
tr
o
l
an
d
en
er
g
y
ef
f
icien
cy
,
p
o
s
itio
n
in
g
it
as
a
k
ey
en
a
b
ler
f
o
r
n
ex
t
-
g
en
er
atio
n
VL
SI
cir
cu
its
,
AI
ac
ce
ler
ato
r
s
,
an
d
I
o
T
d
ev
ices.
Fu
tu
r
e
r
esear
ch
s
h
o
u
ld
f
o
cu
s
o
n
f
u
r
th
e
r
o
p
tim
izin
g
Fin
FE
T
ar
ch
itectu
r
es
to
en
h
an
ce
p
e
r
f
o
r
m
a
n
ce
an
d
s
ca
lab
ilit
y
.
Po
ten
tial
im
p
r
o
v
em
en
ts
in
clu
d
e
h
y
b
r
id
Fin
FET
-
Gate
-
All
-
Ar
o
u
n
d
(
GAA)
d
esig
n
s
,
d
y
n
am
ic
th
r
esh
o
ld
t
u
n
in
g
,
s
tr
ain
e
n
g
i
n
ee
r
in
g
,
an
d
3
D
Fin
FET
s
tack
in
g
t
o
f
u
r
th
er
m
in
im
ize
leak
ag
e
a
n
d
im
p
r
o
v
e
s
witch
in
g
ef
f
icien
cy
.
C
o
n
tin
u
ed
ad
v
an
ce
m
en
ts
in
Fin
FET
f
ab
r
icatio
n
an
d
in
teg
r
atio
n
te
ch
n
iq
u
es
will
d
r
iv
e
s
ca
lab
ilit
y
,
co
s
t
-
ef
f
ec
tiv
en
ess
,
an
d
wid
esp
r
ea
d
ad
o
p
ti
o
n
in
m
o
d
er
n
elec
tr
o
n
ic
s
y
s
tem
s
.
F
UNDING
I
NF
O
R
M
A
T
I
O
N
Au
th
o
r
s
s
tate
n
o
f
u
n
d
in
g
in
v
o
lv
ed
.
AUTHO
R
CO
NT
RI
B
UT
I
O
NS ST
A
T
E
M
E
N
T
T
h
is
jo
u
r
n
al
u
s
es
th
e
C
o
n
tr
ib
u
to
r
R
o
les
T
ax
o
n
o
m
y
(
C
R
ed
iT)
to
r
ec
o
g
n
ize
in
d
iv
id
u
al
au
th
o
r
co
n
tr
ib
u
tio
n
s
,
r
ed
u
ce
au
th
o
r
s
h
ip
d
is
p
u
tes,
an
d
f
ac
ilit
ate
co
llab
o
r
atio
n
.
Na
m
e
o
f
Aut
ho
r
C
M
So
Va
Fo
I
R
D
O
E
Vi
Su
P
Fu
Ve
e
ra
p
p
a
Ch
ik
k
a
g
o
u
d
a
r
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
G
.
In
d
u
m
a
th
i
✓
✓
✓
✓
✓
✓
C
:
C
o
n
c
e
p
t
u
a
l
i
z
a
t
i
o
n
M
:
M
e
t
h
o
d
o
l
o
g
y
So
:
So
f
t
w
a
r
e
Va
:
Va
l
i
d
a
t
i
o
n
Fo
:
Fo
r
mal
a
n
a
l
y
s
i
s
I
:
I
n
v
e
s
t
i
g
a
t
i
o
n
R
:
R
e
so
u
r
c
e
s
D
:
D
a
t
a
C
u
r
a
t
i
o
n
O
:
W
r
i
t
i
n
g
-
O
r
i
g
i
n
a
l
D
r
a
f
t
E
:
W
r
i
t
i
n
g
-
R
e
v
i
e
w
&
E
d
i
t
i
n
g
Vi
:
Vi
su
a
l
i
z
a
t
i
o
n
Su
:
Su
p
e
r
v
i
s
i
o
n
P
:
P
r
o
j
e
c
t
a
d
mi
n
i
st
r
a
t
i
o
n
Fu
:
Fu
n
d
i
n
g
a
c
q
u
i
si
t
i
o
n
CO
NF
L
I
C
T
O
F
I
N
T
E
R
E
S
T
ST
A
T
E
M
E
NT
Au
th
o
r
s
s
tate
n
o
co
n
f
lict o
f
in
t
er
est.
DATA AV
AI
L
AB
I
L
I
T
Y
T
h
e
d
ata
t
h
at
s
u
p
p
o
r
t
th
e
f
in
d
in
g
s
o
f
th
is
s
tu
d
y
a
r
e
av
aila
b
le
f
r
o
m
th
e
c
o
r
r
esp
o
n
d
in
g
a
u
th
o
r
,
VC
,
u
p
o
n
r
ea
s
o
n
ab
le
r
eq
u
est.
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