I
nte
rna
t
io
na
l J
o
urna
l o
f
I
nfo
rm
a
t
ics a
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Co
m
m
un
ica
t
io
n T
ec
hn
o
lo
g
y
(
I
J
-
I
CT
)
Vo
l.
15
,
No
.
3
,
Sep
tem
b
er
20
26
,
p
p
.
1
1
8
8
~
1
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9
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SS
N:
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8
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:
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1
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9
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ct
.
v15
i
3
.
pp
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1188
J
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:
h
ttp
:
//ij
ict.
ia
esco
r
e.
co
m
Desig
n and
ana
ly
sis
of low
-
k
dielec
tric
TS
V line
rs fo
r nois
e
mitig
a
tion in hig
h
-
frequ
ency
3D I
C
s
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k
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uru P
ra
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a
n Abhil
a
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h
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e
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g
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h
a
r
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e
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y
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y
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i
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p
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r
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o
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t
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i
c
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mu
n
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c
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t
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o
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En
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e
e
r
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g
,
M
a
l
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ticle
his
to
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y:
R
ec
eiv
ed
No
v
1
3
,
2
0
2
5
R
ev
is
ed
Ap
r
1
6
,
2
0
2
6
Acc
ep
ted
Ma
y
1
7
,
2
0
2
6
M
o
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re
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s
Law
h
a
s
d
riv
e
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th
e
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e
v
e
lo
p
m
e
n
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o
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v
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ry
lar
g
e
-
sc
a
le
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teg
ra
ti
o
n
(
VLS
I
)
tec
h
n
o
l
o
g
y
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a
l
lo
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n
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c
o
n
ti
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o
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s
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sist
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li
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re
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se
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e
d
,
d
e
n
sity
,
a
n
d
p
e
rfo
rm
a
n
c
e
.
Ho
we
v
e
r,
a
s
two
-
d
ime
n
sio
n
a
l
(2
D)
in
teg
ra
ted
c
ircu
it
s
(ICs)
n
e
a
r
th
e
ir
p
h
y
sic
a
l
a
n
d
p
e
rfo
rm
a
n
c
e
b
o
u
n
d
a
ries
,
a
n
d
2
.
5
D
ICs
stil
l
fa
c
e
in
terc
o
n
n
e
c
t
d
e
lay
a
n
d
p
o
we
r
issu
e
s,
th
re
e
-
d
ime
n
si
o
n
a
l
(3
D)
in
teg
ra
ti
o
n
h
a
s
b
e
c
o
m
e
a
p
ra
c
ti
c
a
l
so
lu
ti
o
n
.
In
3
D
ICs,
m
u
lt
ip
le
a
c
ti
v
e
lay
e
rs
a
re
v
e
rti
c
a
ll
y
sta
c
k
e
d
a
n
d
c
o
n
n
e
c
ted
v
ia
t
h
ro
u
g
h
-
sili
c
o
n
v
ias
(TS
Vs
),
p
ro
v
id
i
n
g
s
h
o
rt,
h
i
g
h
-
b
a
n
d
wi
d
th
in
terc
o
n
n
e
c
ts
b
e
twe
e
n
lay
e
rs.
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e
c
tri
c
a
l
TS
Vs
a
re
e
ss
e
n
ti
a
l
fo
r
sig
n
a
l
tr
a
n
sm
issio
n
,
b
u
t
a
lso
c
a
u
se
n
o
is
e
c
o
u
p
li
n
g
b
e
twe
e
n
a
d
jac
e
n
t
T
S
Vs
,
w
h
e
re
a
n
a
g
g
re
ss
iv
e
TS
V
c
a
n
in
d
u
c
e
in
terf
e
re
n
c
e
in
a
n
e
a
rb
y
TS
V.
T
h
is
c
o
u
p
li
n
g
c
a
n
imp
a
ir
sig
n
a
l
in
teg
r
it
y
,
in
c
re
a
sin
g
d
e
lay
a
n
d
p
o
we
r
c
o
n
su
m
p
t
io
n
.
T
o
m
i
ti
g
a
te
t
h
is,
l
o
w
-
d
iele
c
tri
c
-
c
o
n
sta
n
t
(l
o
w
-
k
)
m
a
teria
ls
a
r
e
u
se
d
to
re
d
u
c
e
c
a
p
a
c
it
iv
e
c
o
u
p
li
n
g
.
In
t
h
is
stu
d
y
,
m
a
teria
ls
su
c
h
a
s
b
e
n
z
o
c
y
c
l
o
b
u
ten
e
(BC
B),
P
e
ry
len
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-
N,
a
n
d
Teflo
n
AF
1
6
0
0
a
re
c
o
m
p
a
re
d
with
c
o
n
v
e
n
ti
o
n
a
l
S
i
O₂
.
G
e
n
e
ra
ll
y
,
TS
Vs
a
re
two
str
u
c
tu
re
s
—
sin
g
le
-
li
n
e
r
a
n
d
sta
c
k
e
d
-
l
in
e
r
—
wh
ich
a
re
a
n
a
l
y
se
d
a
t
1
0
G
Hz
a
n
d
1
THz
fre
q
u
e
n
c
ies
.
At
1
0
G
Hz
,
th
e
sin
g
le
-
li
n
e
r
str
u
c
tu
re
i
n
c
o
r
p
o
ra
t
in
g
S
iO
₂
e
x
h
ib
it
s
a
n
o
ise
re
d
u
c
ti
o
n
o
f
a
b
o
u
t
6
.
5
6
d
B,
wh
e
re
a
s
t
h
e
sta
c
k
e
d
-
li
n
e
r
c
o
n
fig
u
ra
ti
o
n
u
si
n
g
Tefl
o
n
AF
1
6
0
0
p
ro
v
id
e
s
a
n
o
t
i
c
e
a
b
ly
g
re
a
ter
re
d
u
c
ti
o
n
o
f
8
.
4
0
d
B.
As
t
h
e
o
p
e
ra
ti
n
g
fre
q
u
e
n
c
y
in
c
re
a
se
s
to
1
THz
,
t
h
e
a
d
v
a
n
tag
e
o
f
th
e
lo
w
-
k
d
iele
c
tri
c
b
e
c
o
m
e
s
m
o
r
e
e
v
id
e
n
t,
y
ield
in
g
9
.
6
3
d
B
n
o
ise
re
d
u
c
ti
o
n
fo
r
th
e
sin
g
le
-
li
n
e
r
a
n
d
1
2
.
0
4
d
B
fo
r
th
e
sta
c
k
e
d
-
li
n
e
r
stru
c
tu
re
.
Th
e
se
re
su
lt
s
in
d
ica
te
th
a
t
l
o
w
-
k
m
a
teria
ls
e
ffe
c
ti
v
e
ly
su
p
p
re
ss
c
a
p
a
c
it
iv
e
c
o
u
p
li
n
g
a
n
d
m
it
ig
a
te
h
ig
h
-
fre
q
u
e
n
c
y
in
terfe
r
e
n
c
e
in
3
D
IC
s.
Th
e
sta
c
k
e
d
-
li
n
e
r
d
e
si
g
n
c
o
n
tri
b
u
tes
a
d
d
i
ti
o
n
a
l
iso
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b
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re
a
ti
n
g
a
se
c
o
n
d
a
ry
d
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tri
c
b
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rrier,
wh
ich
f
u
rth
e
r
m
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imiz
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s
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lec
tri
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field
i
n
tera
c
ti
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e
twe
e
n
n
e
ig
h
b
o
ri
n
g
in
terc
o
n
n
e
c
ts.
Th
u
s,
t
h
e
in
te
g
ra
ti
o
n
o
f
l
o
w
-
k
d
iele
c
tri
c
s
with
o
p
ti
m
ize
d
li
n
e
r
a
rc
h
it
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c
tu
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s
sig
n
ifi
c
a
n
tl
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e
n
h
a
n
c
e
s
sig
n
a
l
in
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rit
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a
n
d
o
v
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ra
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e
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tro
m
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ti
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p
e
rfo
rm
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n
c
e
in
a
d
v
a
n
c
e
d
h
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g
h
-
fre
q
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e
n
c
y
3
D IC
s
y
ste
m
s.
K
ey
w
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d
s
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C
lam
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r
co
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p
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E
lectr
ical
T
SV
Per
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len
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-
N
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m
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A
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r
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Dep
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Un
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Go
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An
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in
1.
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Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J I
n
f
&
C
o
m
m
u
n
T
ec
h
n
o
l
I
SS
N:
2252
-
8
7
7
6
Desig
n
a
n
d
a
n
a
lysi
s
o
f lo
w
-
k
d
iel
ec
tr
ic
TS
V
lin
ers
fo
r
n
o
is
e
… (
P
a
th
a
k
u
n
ta
Gu
r
u
P
r
a
th
a
p
R
ed
d
y
)
1189
s
ca
le
in
teg
r
atio
n
(
VL
SI
)
tec
h
n
o
lo
g
y
.
Scalin
g
d
o
w
n
tr
an
s
is
to
r
d
im
en
s
io
n
s
h
as
en
a
b
led
e
n
h
an
ce
d
p
er
f
o
r
m
a
n
ce
,
lo
wer
p
o
wer
co
n
s
u
m
p
tio
n
,
an
d
h
ig
h
er
in
teg
r
atio
n
d
en
s
ity
[
1
]
–
[
3
]
.
Yet,
as
d
e
v
ice
d
im
en
s
io
n
s
en
ter
th
e
d
ee
p
n
an
o
m
eter
r
eg
im
e,
p
lan
a
r
two
-
d
im
en
s
io
n
al
(
2
D)
in
te
g
r
ated
cir
cu
its
(
I
C
s
)
in
cr
ea
s
in
g
ly
c
o
n
f
r
o
n
t
f
u
n
d
am
en
tal
lim
itatio
n
s
:
in
ter
co
n
n
ec
t
d
elay
s
,
p
ar
asit
ic
ca
p
ac
itan
ce
s
,
r
is
in
g
r
esis
tan
ce
s
,
h
ea
t
d
is
s
ip
atio
n
,
an
d
s
ig
n
al
-
in
teg
r
ity
d
eg
r
a
d
atio
n
[
4
]
–
[
6
]
.
T
o
p
ar
tially
m
itig
ate
th
ese
lim
itatio
n
s
,
2
.
5
D
in
teg
r
ati
o
n
was
in
tr
o
d
u
ce
d
.
I
n
2
.
5
D,
d
is
cr
ete
d
ies
(
ch
i
p
s
)
ar
e
p
lace
d
s
id
e
b
y
s
id
e
an
d
co
n
n
ec
ted
v
ia
a
n
in
ter
p
o
s
er
(
e.
g
.
,
s
ilico
n
in
ter
p
o
s
er
)
o
r
r
ed
is
tr
ib
u
tio
n
lay
er
s
(
R
DL
s
)
[
6
]
–
[
9
]
.
W
h
ile
2
.
5
D
o
f
f
er
s
im
p
r
o
v
em
e
n
ts
in
b
an
d
wid
th
an
d
m
o
d
u
la
r
in
teg
r
atio
n
,
it
s
till
s
u
f
f
er
s
f
r
o
m
r
elativ
ely
lo
n
g
in
ter
c
o
n
n
ec
t
p
ath
s
,
lim
ited
v
er
tical
c
o
m
m
u
n
icatio
n
,
an
d
r
esid
u
al
laten
cy
an
d
p
o
wer
o
v
er
h
ea
d
s
-
esp
ec
ially
wh
en
b
r
id
g
in
g
lar
g
e
later
al
d
is
tan
ce
s
.
C
o
n
s
eq
u
en
tly
,
th
r
ee
-
d
im
en
s
io
n
al
(
3
D)
in
te
g
r
atio
n
h
as
g
ain
ed
atten
tio
n
as
a
p
r
o
m
is
in
g
ev
o
lu
tio
n
.
I
n
3
D
I
C
s
,
m
u
ltip
le
ac
tiv
e
d
e
v
ice
lay
er
s
(
d
ies)
a
r
e
v
e
r
tically
s
tack
ed
an
d
in
ter
c
o
n
n
ec
te
d
b
y
th
r
o
u
g
h
-
s
ilico
n
v
ias
(
T
SVs
)
[
1
0
]
–
[
1
2
]
.
T
h
e
s
e
v
er
tical
in
ter
co
n
n
e
cts
d
r
asti
ca
lly
s
h
o
r
ten
s
ig
n
al
p
ath
len
g
th
s
,
im
p
r
o
v
e
b
an
d
wid
th
,
an
d
en
a
b
le
f
i
n
er
-
g
r
ain
ed
h
eter
o
g
en
e
o
u
s
in
te
g
r
atio
n
(
e
.
g
.
,
lo
g
ic
ato
p
m
em
o
r
y
)
with
r
e
d
u
ce
d
f
o
o
tp
r
i
n
t a
n
d
l
o
wer
laten
cy
[
1
3
]
–
[
1
5
]
.
Ho
wev
er
,
elec
tr
ical
T
SVs
b
r
i
n
g
th
eir
o
wn
s
et
o
f
ch
allen
g
es
.
At
h
ig
h
f
r
eq
u
en
cies,
th
e
r
ela
tiv
ely
h
ig
h
d
ielec
tr
ic
co
n
s
tan
t
o
f
SiO₂
in
cr
ea
s
es
p
ar
asit
ic
ca
p
ac
itan
ce
,
lead
in
g
to
s
ig
n
if
ican
t
ca
p
a
citiv
e
co
u
p
lin
g
an
d
cr
o
s
s
talk
n
o
is
e
b
etwe
en
ad
jace
n
t
T
SVs
.
T
h
is
l
im
itatio
n
m
o
tiv
ates
th
e
u
s
e
o
f
lo
w
-
k
d
ielec
tr
ic
m
ater
ials
,
wh
ich
ef
f
ec
tiv
ely
r
e
d
u
ce
co
u
p
lin
g
ef
f
ec
ts
an
d
im
p
r
o
v
e
s
ig
n
al
i
n
teg
r
ity
in
3
D
I
C
s
.
A
m
ajo
r
h
u
r
d
l
e
is
n
o
is
e
co
u
p
lin
g
(
cr
o
s
s
talk
)
b
etwe
en
ad
jace
n
t
T
SVs
:
th
e
s
witch
in
g
ac
tiv
ity
i
n
o
n
e
T
SV
(
th
e
“a
g
g
r
ess
o
r
”)
ca
n
ca
p
ac
itiv
ely
o
r
in
d
u
ctiv
ely
c
o
u
p
le
u
n
wa
n
ted
s
ig
n
als
in
to
its
n
eig
h
b
o
u
r
(
th
e
“v
ictim
”)
[
1
6
]
.
T
h
is
c
o
u
p
lin
g
lead
s
to
s
ig
n
al
d
is
to
r
tio
n
,
p
r
o
p
ag
atio
n
d
elay
,
an
d
d
e
g
r
ad
atio
n
in
r
eliab
ilit
y
,
p
ar
ticu
lar
ly
at
h
i
g
h
f
r
eq
u
e
n
cies
[
1
7
]
.
T
o
r
ed
u
ce
s
u
ch
in
ter
f
e
r
en
ce
,
d
esig
n
er
s
o
f
ten
o
p
t
f
o
r
lo
w
-
d
ielec
tr
ic
-
co
n
s
tan
t
(
lo
w
-
k
)
m
ater
ials
as
in
s
u
latin
g
lin
er
s
o
r
d
ielec
tr
ics
b
etwe
en
T
SVs
.
B
y
lo
wer
in
g
th
e
d
ielec
tr
ic
co
n
s
tan
t,
th
e
p
ar
asit
ic
ca
p
ac
itan
ce
-
an
d
h
en
ce
co
u
p
lin
g
-
can
b
e
r
ed
u
ce
d
[
1
8
]
.
C
o
n
v
en
tio
n
al
SiO₂
is
wid
ely
u
s
ed
,
b
u
t
n
ew
d
ielec
tr
ic
m
ater
ials
s
u
ch
as
b
en
zo
cy
clo
b
u
ten
e
(
B
C
B
)
,
Per
y
len
e
-
N,
an
d
T
ef
lo
n
AF
1
6
0
0
h
av
e
attr
ac
ted
atten
tio
n
d
u
e
to
th
eir
lo
wer
p
er
m
itti
v
ity
an
d
f
av
o
u
r
a
b
le
elec
tr
ical
is
o
latio
n
ch
ar
ac
ter
is
tics
[
1
9
]
.
B
ey
o
n
d
m
ater
ial
ch
o
ices,
th
e
s
tr
u
ctu
r
al
d
esig
n
o
f
th
e
T
SV i
s
o
latio
n
is
also
v
ital.
T
wo
co
m
m
o
n
T
SV lin
er
co
n
f
ig
u
r
atio
n
s
ar
e
th
e
s
in
g
le
-
lin
e
r
an
d
th
e
s
tack
ed
-
lin
er
(
d
ielec
tr
ic
–
m
etal
–
d
ielec
tr
ic)
s
tr
u
ctu
r
es
[
2
0
]
.
T
h
ese
d
if
f
e
r
en
t
a
r
r
an
g
e
m
en
ts
in
f
lu
en
ce
th
e
co
u
p
lin
g
p
ath
s
an
d
s
h
ield
in
g
e
f
f
ec
tiv
en
ess
,
esp
ec
ially
at
h
ig
h
f
r
eq
u
e
n
cies.
I
n
th
is
wo
r
k
,
we
an
aly
s
e
an
d
co
m
p
a
r
e
th
e
n
o
is
e
-
co
u
p
lin
g
p
er
f
o
r
m
an
ce
o
f
s
in
g
le
-
lin
er
an
d
s
tack
ed
-
lin
er
T
SV
s
tr
u
ctu
r
es
at
1
0
GHz
an
d
1
T
Hz
u
s
in
g
d
ie
lectr
ic
m
ater
ials
in
clu
d
in
g
SiO₂,
B
C
B
,
Per
y
len
e
-
N,
an
d
T
ef
l
o
n
AF
1
6
0
0
.
Ou
r
r
esu
lts
q
u
an
tify
t
h
e
n
o
is
e
-
s
u
p
p
r
ess
io
n
ef
f
ec
tiv
e
n
ess
(
in
p
er
ce
n
tag
e
an
d
d
B
)
f
o
r
ea
c
h
co
n
f
ig
u
r
atio
n
,
t
h
er
e
b
y
h
ig
h
li
g
h
tin
g
th
e
m
er
its
o
f
lo
w
-
k
m
ater
ials
an
d
a
d
v
an
ce
d
lin
er
d
esig
n
s
in
3
D
I
C
s
y
s
tem
s
.
2.
L
I
T
E
R
AT
U
RE
SU
RVE
Y
Vem
p
alle
an
d
Dh
al
[
2
1
]
e
x
p
er
im
en
tally
in
v
esti
g
ate
th
e
u
s
e
o
f
B
C
B
as
a
p
o
ly
m
er
f
illi
n
g
/lin
er
f
o
r
h
ig
h
-
asp
ec
t
-
r
atio
an
n
u
lar
tr
e
n
ch
es
u
s
ed
in
T
SV
f
ab
r
icatio
n
.
T
h
e
p
a
p
er
r
e
p
o
r
ts
B
C
B
’
s
lo
w
d
ielec
tr
ic
co
n
s
tan
t,
ch
em
ical
r
esis
tan
ce
,
an
d
h
ig
h
th
er
m
al
s
tab
ilit
y
af
ter
cu
r
in
g
-
p
r
o
p
er
ties
th
at
r
ed
u
ce
T
S
V
ca
p
ac
itan
ce
an
d
im
p
r
o
v
e
elec
tr
ical
is
o
latio
n
co
m
p
ar
ed
to
c
o
n
v
e
n
tio
n
al
SiO₂
lin
er
s
.
T
h
e
wo
r
k
also
d
is
cu
s
s
es
p
r
o
ce
s
s
in
g
ch
allen
g
es
an
d
d
em
o
n
s
tr
ates
B
C
B
’
s
v
iab
ilit
y
f
o
r
d
en
s
e
T
S
V
ar
r
ay
s
.
Alt
h
o
u
g
h
p
r
im
a
r
ily
a
th
er
m
o
-
m
ec
h
an
ical
r
eliab
ilit
y
s
tu
d
y
,
J
u
n
g
et
a
l.
[
2
2
]
co
m
p
a
r
e
SiO₂
an
d
p
o
ly
m
er
lin
er
s
(
in
clu
d
in
g
B
C
B
)
f
o
r
T
SVs
an
d
s
h
o
w
th
at
B
C
B
’
s
m
u
ch
lo
wer
Yo
u
n
g
’
s
m
o
d
u
lu
s
r
ed
u
ce
s
s
tr
ess
co
n
ce
n
tr
atio
n
s
at
th
e
T
SV/li
n
er
in
te
r
f
ac
e.
T
h
e
p
ap
er
is
im
p
o
r
tan
t
b
ec
au
s
e
it
lin
k
s
li
n
er
m
ec
h
an
ical
p
r
o
p
er
ties
to
b
o
th
r
eliab
ilit
y
an
d
th
e
ele
ctr
ical
p
er
f
o
r
m
an
ce
tr
ad
eo
f
f
s
wh
en
r
ep
lacin
g
SiO₂ w
ith
s
o
f
ter
,
lo
w
-
k
p
o
ly
m
e
r
s
[
2
3
]
.
Z
h
o
n
g
et
a
l.
[
2
4
]
d
e
v
elo
p
lu
m
p
ed
-
cir
c
u
it
an
d
s
ca
tter
in
g
-
p
ar
am
eter
(
S
-
p
ar
am
eter
)
-
b
ased
m
o
d
els
f
o
r
T
SV
-
to
-
T
SV
co
u
p
lin
g
,
q
u
an
tify
in
g
h
o
w
d
ielec
tr
ic
p
ar
a
m
eter
s
an
d
T
SV
g
eo
m
etr
y
in
f
lu
en
ce
cr
o
s
s
talk
.
W
h
ile
th
e
p
ap
er
u
s
es
SiO₂
in
m
an
y
b
aselin
e
m
o
d
els,
its
m
o
d
ellin
g
ap
p
r
o
ac
h
is
d
i
r
ec
tly
ap
p
licab
le
to
th
e
s
tu
d
y
o
f
alter
n
ativ
e
lin
er
s
s
u
ch
as
B
C
B
.
I
t
is
f
r
eq
u
en
tly
cited
b
y
s
u
b
s
eq
u
e
n
t
m
ate
r
ial
-
f
o
c
u
s
ed
s
tu
d
ies
.
T
h
is
p
ar
am
etr
ic
elec
tr
o
m
ag
n
etic
s
tu
d
y
s
y
s
tem
atica
lly
an
aly
s
es
h
o
w
T
SV
g
eo
m
etr
ic
an
d
m
ater
ial
p
ar
am
eter
s
(
in
clu
d
in
g
SiO₂
lin
er
t
h
ick
n
e
s
s
an
d
d
if
f
er
en
t
d
ielec
tr
ics)
af
f
ec
t
in
ter
p
o
s
er
a
n
d
T
SV
cr
o
s
s
talk
.
T
h
e
p
ap
e
r
p
r
o
v
id
es
d
esig
n
g
u
id
elin
es
to
m
in
im
is
e
ca
p
ac
itiv
e
co
u
p
lin
g
an
d
illu
s
tr
ates
th
e
s
ig
n
if
i
ca
n
t
r
o
les
th
at
th
e
d
ielec
tr
ic
co
n
s
tan
t a
n
d
lin
e
r
co
n
f
ig
u
r
atio
n
p
lay
at
m
u
lti
-
GHz
f
r
eq
u
e
n
cies
[
2
5
]
.
T
h
is
s
tu
d
y
ch
ar
ac
ter
is
es
th
e
th
er
m
al
an
d
elec
tr
ical
b
eh
av
io
u
r
o
f
T
SVs
with
B
C
B
lin
er
s
.
R
esu
lts
s
h
o
w
r
ed
u
ce
d
T
SV
ca
p
ac
itan
ce
an
d
im
p
r
o
v
ed
h
i
g
h
-
f
r
e
q
u
en
c
y
is
o
latio
n
c
o
m
p
ar
ed
to
SiO₂
lin
er
s
.
Ho
wev
er
,
th
e
a
u
th
o
r
s
war
n
ab
o
u
t
tr
ad
e
-
o
f
f
s
in
th
er
m
al
c
o
n
d
u
ctio
n
(
p
o
ly
m
er
lin
er
s
r
e
d
u
ce
th
er
m
al
p
ath
s
)
a
n
d
r
ec
o
m
m
en
d
d
esig
n
m
ea
s
u
r
es
f
o
r
h
ea
t
r
em
o
v
al
in
s
tack
ed
d
ies.
T
h
e
p
ap
er
is
u
s
ef
u
l
b
ec
au
s
e
it
q
u
an
tifie
s
th
e
elec
tr
ical
b
en
ef
its
alo
n
g
s
id
e
th
er
m
al
p
en
alties
[
2
6
]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8
7
7
6
I
n
t J I
n
f
&
C
o
m
m
u
n
T
ec
h
n
o
l
,
Vo
l.
15
,
No
.
3
,
Sep
tem
b
er
20
26
:
1
1
8
8
-
1
1
9
6
1190
3.
DE
S
I
G
N
P
ARA
M
E
T
E
R
S
T
o
m
in
im
is
e
am
b
ien
t
in
ter
f
er
en
ce
d
u
r
in
g
th
e
in
teg
r
atio
n
o
f
3
D
I
C
s
,
m
u
ltip
le
m
o
d
els
a
r
e
em
p
lo
y
ed
ac
r
o
s
s
v
ar
io
u
s
ch
ip
s
.
Fin
is
h
ed
th
e
u
s
e
o
f
th
r
o
u
g
h
-
s
ilico
n
v
i
as
(
T
SVs
)
,
3
D
I
C
s
alig
n
ch
ip
s
b
y
s
tack
in
g
th
e
m
b
o
th
elec
tr
o
s
tatically
an
d
v
e
r
tically
.
T
h
e
cu
r
r
en
t
f
o
ca
l
p
o
in
t
with
in
3
D
IC
s
u
tili
s
in
g
T
SVs
lies
in
th
e
p
er
f
o
r
m
an
ce
-
to
-
clam
o
u
r
-
co
u
p
lin
g
r
atio
o
f
th
e
s
y
s
tem
.
T
SVs
ar
e
ess
en
tial
f
o
r
3
D
I
C
s
to
estab
lis
h
co
m
m
u
n
icatio
n
with
o
th
er
ac
tiv
e
d
ev
ices.
An
is
s
u
e
ar
is
e
s
wh
en
th
e
T
SV
o
f
th
e
af
f
ec
te
d
ch
ip
p
ick
s
u
p
th
e
elec
tr
ical
s
ig
n
al
p
ath
T
SV
’
s
clam
o
u
r
.
R
esear
ch
d
em
o
n
s
tr
ates
th
at
s
u
b
s
titu
tin
g
th
e
co
r
e
m
a
ter
ials
f
o
r
d
if
f
e
r
en
t
lin
er
s
ca
n
d
ec
r
ea
s
e
cr
o
s
s
talk
co
u
p
lin
g
b
etwe
en
th
e
elec
tr
ic
al
T
SV
(
E
T
SV)
an
d
th
e
a
f
f
ec
ted
T
SV,
as
well
as
b
etwe
en
th
e
T
SV
an
d
s
ilico
n
.
T
h
e
s
tr
o
n
g
co
n
n
ec
tio
n
b
etwe
en
th
e
T
SV
a
n
d
th
e
af
f
licted
T
SV
is
co
n
f
ir
m
ed
an
d
s
tu
d
ied
.
I
n
ac
co
r
d
an
ce
with
th
e
in
ter
n
atio
n
al
tech
n
o
lo
g
y
r
o
ad
m
ap
f
o
r
s
em
ico
n
d
u
cto
r
s
(
I
T
R
S
)
r
o
ad
m
ap
,
th
e
n
o
r
m
al
p
itch
,
wh
ich
is
th
e
d
is
tan
ce
b
etwe
en
T
SVs
,
f
alls
with
in
th
e
r
an
g
e
o
f
2
μ
m
to
8
μ
m
.
T
h
e
elec
tr
ical
in
ter
f
er
e
n
ce
b
etwe
en
t
h
e
im
p
ac
ted
T
SVs
an
d
s
ig
n
al
-
tr
an
s
m
itti
n
g
T
SVs
(
in
ten
s
e
T
SVs
)
m
ay
b
e
e
v
alu
ated
u
s
in
g
f
in
ite
elem
en
t
an
aly
s
is
an
d
a
3
D
IC
m
o
d
el,
as
illu
s
tr
ated
in
Fig
u
r
e
1
.
Fig
u
r
e
1
(
a)
s
h
o
ws
T
SV
s
with
a
s
in
g
le
-
lin
er
s
tr
u
ctu
r
e,
wh
ile
Fi
g
u
r
e
1
(
b
)
p
r
esen
ts
T
SVs
wi
th
a
s
tack
ed
-
lin
er
s
tr
u
ctu
r
e
.
Fig
u
r
e
1
(
c)
d
ep
icts
th
e
p
o
ten
tial
v
a
r
iatio
n
b
etwe
en
a
g
g
r
ess
iv
e
an
d
v
ictim
T
SVs
u
s
i
n
g
d
is
p
ar
ate
d
ielec
tr
ic
m
ater
ia
ls
in
a
s
in
g
le
-
lin
er
3
D
I
C
co
n
f
ig
u
r
atio
n
,
an
d
Fig
u
r
e
1
(
d
)
illu
s
tr
ates
th
e
co
r
r
esp
o
n
d
in
g
p
o
te
n
tial
v
ar
iatio
n
in
a
s
tack
ed
-
lin
er
3
D
I
C
co
n
f
ig
u
r
atio
n
.
Fin
ite
elem
en
t
m
eth
o
d
(
FEM
)
m
o
d
els
d
r
aw
o
n
a
wid
e
r
a
n
g
e
o
f
p
h
y
s
ical
d
is
cip
lin
es,
in
clu
d
in
g
elec
tr
o
s
tatics,
h
ea
t tr
an
s
p
o
r
t,
a
n
d
m
an
y
m
o
r
e.
(
a)
(
b
)
(
c)
(
d
)
Fig
u
r
e
1
.
T
o
p
-
v
iew
e
lectr
ical
T
SV (
E
T
SV)
m
o
d
els illu
s
tr
atin
g
d
if
f
er
en
t lin
er
co
n
f
i
g
u
r
atio
n
s
an
d
p
o
ten
tial v
ar
iatio
n
s
;
(
a)
T
SVs
with
s
in
g
le
-
lin
er
s
tr
u
ctu
r
e
,
(
b
)
T
SVs
with
s
tack
ed
-
lin
er
s
tr
u
ctu
r
e
,
(
c)
po
te
n
tial v
ar
iatio
n
b
etwe
en
ag
g
r
ess
iv
e
an
d
v
ictim
T
SVs
u
s
in
g
d
is
p
ar
ate
d
ielec
tr
ic
m
ater
ials
in
a
s
in
g
le
-
lin
er
3
D
I
C
co
n
f
ig
u
r
ati
o
n
,
an
d
(
d
)
p
o
te
n
tial v
ar
iatio
n
b
etwe
en
ag
g
r
ess
iv
e
an
d
v
icti
m
T
SVs
u
s
in
g
d
is
p
ar
ate
d
ielec
tr
ic
m
ate
r
ials
in
a
s
t
ac
k
ed
-
lin
er
3
D
I
C
co
n
f
ig
u
r
atio
n
T
h
e
T
SVs
h
av
e
a
to
tal
ar
ea
o
f
4
µm
,
a
th
ic
k
n
ess
o
f
0
.
1
5
µ
m
,
an
d
a
h
eig
h
t
o
f
8
µ
m
,
as
s
h
o
wn
in
T
ab
le
1
.
A
wid
e
r
an
g
e
o
f
d
iele
ctr
ic
m
ater
ials
with
d
if
f
er
en
t
r
atio
s
wer
e
in
clu
d
ed
in
th
e
s
im
u
latio
n
.
T
ef
lo
n
-
AF
1600
’
s
ex
ce
p
tio
n
al
h
ea
t
s
tab
ilit
y
,
lo
w
d
ielec
tr
ic
lo
s
s
,
an
d
lo
w
d
ielec
tr
ic
co
n
s
tan
t
m
ak
e
it
a
v
alu
ab
le
d
ielec
tr
ic
m
ater
ial.
I
t
wo
r
k
s
wo
n
d
er
f
u
ll
y
f
o
r
u
s
es
in
v
o
lv
i
n
g
h
ig
h
f
r
e
q
u
en
cies
an
d
ef
f
ec
ti
v
e
en
er
g
y
s
to
r
ag
e.
I
t
is
well
-
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I
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o
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u
n
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ec
h
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o
l
I
SS
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2252
-
8
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7
6
Desig
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n
d
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f lo
w
-
k
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tr
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TS
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lin
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fo
r
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a
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ta
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r
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a
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R
ed
d
y
)
1191
s
u
ited
f
o
r
h
ig
h
-
tech
elec
tr
o
n
ic
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ev
ices,
s
u
ch
as
f
lex
ib
le
an
d
wea
r
ab
le
elec
tr
o
n
ics,
d
u
e
to
its
ad
ap
tab
le
m
o
lecu
lar
s
tr
u
ctu
r
e
an
d
co
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p
atib
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with
f
lex
ib
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s
u
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s
tr
a
tes.
Fu
r
th
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m
o
r
e,
it
p
er
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o
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m
s
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eliab
ly
o
v
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tim
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a
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en
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ir
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ts
th
an
k
s
to
its
en
v
ir
o
n
m
en
t
al
r
esil
ien
ce
.
T
h
e
r
esu
lts
r
ev
ea
l
th
at
co
m
p
ar
ed
to
tr
ad
itio
n
al
m
ater
ials
,
T
e
f
lo
n
-
AF
1
6
0
0
h
as
s
u
p
er
io
r
d
ielec
tr
ic
ch
ar
ac
ter
is
tics
,
r
esu
ltin
g
i
n
a
4
4
.
4
%
d
ec
r
ea
s
e
in
n
o
is
e
co
u
p
lin
g
a
n
d
a
2
0
%
r
e
d
u
ctio
n
i
n
p
o
wer
co
n
s
u
m
p
tio
n
.
Hig
h
m
eltin
g
p
o
in
t
m
ater
ia
ls
im
p
r
o
v
e
t
h
er
m
al
s
tab
ilit
y
an
d
av
o
id
T
SV
d
eter
io
r
atio
n
;
th
is
p
r
o
v
es
th
at
T
ef
l
o
n
-
AF
1
6
0
0
is
a
v
ia
b
le
o
p
tio
n
f
o
r
lo
we
r
in
g
n
o
is
e
co
u
p
lin
g
in
3
D
I
C
s
,
wh
ich
in
tu
r
n
en
ab
les
h
ig
h
-
p
er
f
o
r
m
an
ce
,
d
ep
e
n
d
ab
le
3
D
I
C
s
f
o
r
a
wid
e
r
an
g
e
o
f
u
s
es.
R
ed
u
cin
g
h
o
ts
p
o
ts
is
m
ad
e
p
o
s
s
ib
le
b
y
h
ig
h
th
e
r
m
al
co
n
d
u
c
tiv
ity
,
wh
ich
allo
ws
f
o
r
e
f
f
ec
ti
v
e
h
ea
t
d
is
p
er
s
io
n
.
T
ak
en
as a
wh
o
le,
th
ese
f
ea
tu
r
es b
o
o
s
t T
SV p
er
f
o
r
m
an
ce
an
d
d
ep
e
n
d
ab
ilit
y
.
T
ab
le
1
.
Simu
latio
n
p
ar
am
eter
s
as p
er
I
T
R
S r
o
ad
m
ap
P
a
r
a
me
t
e
r
V
a
l
u
e
TSV
d
i
a
me
t
e
r
2
.
0
0
µ
m
Li
n
e
r
m
a
t
e
r
i
a
l
t
h
i
c
k
n
e
ss
0
.
1
5
0
µm
TSV
h
e
i
g
h
t
8
.
0
0
µ
m
A
g
g
r
e
ss
i
v
e
TSV
t
o
v
i
c
t
i
m TSV
d
i
st
a
n
c
e
4
.
0
0
µ
m
P
i
t
c
h
2
.
0
0
µ
m
T
ab
le
2
in
d
icate
s
th
e
k
ey
p
h
y
s
ical
an
d
elec
tr
ical
p
r
o
p
er
ties
o
f
d
ielec
tr
ic
m
ater
ials
u
s
ed
in
T
SV
lin
er
s
tr
u
ctu
r
es.
I
t
s
h
o
ws
th
at
T
ef
lo
n
AF
1
6
0
0
h
as
th
e
lo
west
d
iel
ec
tr
ic
co
n
s
tan
t
an
d
th
er
m
al
c
o
n
d
u
ctiv
ity
,
m
ak
in
g
it id
ea
l f
o
r
m
in
im
is
in
g
ca
p
ac
it
iv
e
co
u
p
lin
g
a
n
d
h
ea
t tr
a
n
s
f
er
.
C
o
m
p
ar
ed
to
co
n
v
en
ti
o
n
al
Si
O₂,
lo
w
-
k
m
ater
ials
s
u
ch
as
B
C
B
,
Per
y
len
e
-
N,
an
d
T
ef
lo
n
AF
1
6
0
0
o
f
f
er
s
u
p
e
r
io
r
elec
tr
ical
is
o
latio
n
an
d
th
er
m
al
s
tab
ilit
y
f
o
r
ad
v
an
ce
d
3
D
I
C
ap
p
licatio
n
s
.
Fig
u
r
e
1
illu
s
tr
ates
th
e
E
T
SV
to
p
-
v
iew
m
o
d
els
c
o
m
p
ar
i
n
g
s
in
g
le
-
a
n
d
s
tack
ed
-
lin
er
s
tr
u
ctu
r
es.
I
t
also
d
e
p
icts
h
o
w
th
e
p
o
ten
tial
v
ar
ies
b
et
wee
n
ag
g
r
ess
iv
e
an
d
v
ictim
T
SVs
wh
en
d
if
f
er
en
t
d
ielec
tr
ic
m
ater
ials
ar
e
em
p
lo
y
ed
in
b
o
th
co
n
f
ig
u
r
atio
n
s
.
Fig
u
r
e
2
illu
s
tr
ates
th
e
E
T
SV
v
is
u
al
r
ep
r
esen
tatio
n
o
f
th
e
p
r
o
p
o
s
ed
m
o
d
el
f
o
r
s
in
g
le
-
an
d
s
tack
ed
-
lin
e
r
s
tr
u
ctu
r
es.
Fig
u
r
e
3
p
r
esen
ts
a
v
is
u
al
r
ep
r
esen
tatio
n
o
f
th
e
p
r
o
p
o
s
ed
m
o
d
el
th
at
ev
alu
ate
s
clam
o
u
r
co
u
p
lin
g
f
r
o
m
a
to
p
-
d
o
wn
p
e
r
s
p
ec
tiv
e.
Fig
u
r
e
4
s
h
o
ws
th
e
s
tack
ed
lin
er
s
tr
u
ctu
r
e,
wh
e
r
e
v
ar
i
o
u
s
d
ielec
tr
ic
m
ater
ials
ar
e
em
p
l
o
y
ed
,
a
n
d
th
e
v
ar
iatio
n
s
b
et
wee
n
th
e
T
SVs
ar
e
ex
am
in
ed
in
a
3
D
v
iew.
Fig
u
r
e
5
ex
p
lain
s
th
e
ex
p
lo
r
atio
n
o
f
elec
tr
ical
in
ter
f
er
en
ce
;
th
e
d
ielec
tr
ic
p
r
o
p
er
ties
o
f
T
ef
lo
n
AF 1
6
0
0
wer
e
s
cr
u
ti
n
is
ed
u
s
in
g
a
to
p
-
v
iew
E
T
SV
m
o
d
el.
T
ab
le
2
.
Var
io
u
s
d
ielec
tr
ic
m
a
ter
ials
u
s
ed
in
T
SVs
ex
am
in
ed
P
a
r
a
me
t
e
r
S
i
O
2
B
C
B
T
e
f
l
o
n
A
F
1
6
0
0
P
e
r
y
l
e
n
e
-
N
D
i
e
l
e
c
t
r
i
c
c
o
n
s
t
a
n
t
(
–
)
3
.
9
2
.
5
1
.
9
2
.
2
V
o
l
u
m
e
r
e
s
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m
a
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ls
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u
r
es
7
a
n
d
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s
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ater
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r
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.
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e
-
N,
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lo
n
AF 1
6
0
0
)
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a
s
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ed
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lin
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T
SV a
t 1
0
GHz
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2
2
5
2
-
8
7
7
6
I
n
t J I
n
f
&
C
o
m
m
u
n
T
ec
h
n
o
l
,
Vo
l.
15
,
No
.
3
,
Sep
tem
b
er
20
26
:
1
1
8
8
-
1
1
9
6
1194
Fig
u
r
e
7
s
h
o
ws
th
at
am
o
n
g
th
e
test
ed
d
ielec
tr
ic
m
ater
ials
,
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lo
n
AF
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6
0
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m
an
ce
at
th
is
d
is
tan
ce
.
C
o
m
p
ar
ed
to
o
th
er
lo
w
-
k
m
ater
ials
s
u
ch
a
s
B
C
B
,
Per
y
len
e
-
N,
an
d
SiO₂,
T
ef
lo
n
AF
1
6
0
0
ac
h
iev
es
ab
o
u
t
3
3
.
5
%
n
o
is
e
r
ed
u
ctio
n
a
n
d
1
0
.
4
6
d
B
s
ig
n
al
atten
u
atio
n
at
th
e
v
ictim
T
SV
lo
ca
tio
n
co
m
p
ar
e
d
to
c
o
n
v
en
tio
n
al
SiO₂.
Alth
o
u
g
h
lo
w
-
k
m
ater
ials
g
e
n
er
ally
p
r
o
v
id
e
m
o
r
e
ef
f
ec
tiv
e
ca
p
ac
itiv
e
co
u
p
lin
g
r
ed
u
ctio
n
,
T
ef
lo
n
AF
1
6
0
0
d
em
o
n
s
tr
ates
b
etter
s
u
p
p
r
ess
io
n
o
f
cr
o
s
s
-
co
u
p
led
n
o
is
e
in
th
is
s
etu
p
an
d
f
r
eq
u
en
c
y
r
an
g
e,
d
u
e
to
its
s
tab
le
d
ielec
tr
ic
p
r
o
p
e
r
ties
an
d
h
ig
h
e
r
b
r
ea
k
d
o
wn
s
tr
en
g
th
f
o
r
a
s
ta
ck
ed
lin
er
s
tr
u
ctu
r
e
at
1
0
GHz
.
Fig
u
r
e
8
s
h
o
ws
th
at
am
o
n
g
th
e
test
ed
d
ielec
tr
ic
m
ater
ials
,
T
ef
lo
n
AF
1
6
0
0
h
as
th
e
lo
west
elec
tr
ic
p
o
ten
tial
at
a
s
p
ac
in
g
o
f
4
μ
m
,
in
d
icatin
g
its
s
u
p
er
io
r
is
o
latio
n
p
er
f
o
r
m
an
ce
at
th
is
d
is
tan
ce
.
C
o
m
p
ar
ed
to
o
th
er
lo
w
-
k
m
ater
ials
s
u
ch
a
s
B
C
B
,
Per
y
len
e
-
N,
an
d
SiO₂,
T
ef
lo
n
AF
1
6
0
0
ac
h
iev
es
ab
o
u
t
4
4
.
4
%
n
o
is
e
r
ed
u
ctio
n
a
n
d
1
2
.
0
4
d
B
s
ig
n
al
atten
u
atio
n
at
th
e
v
ictim
T
SV
lo
ca
tio
n
co
m
p
ar
e
d
to
c
o
n
v
en
tio
n
al
SiO₂.
Alth
o
u
g
h
lo
w
-
k
m
ater
ials
g
e
n
er
ally
p
r
o
v
id
e
m
o
r
e
ef
f
ec
tiv
e
ca
p
ac
itiv
e
co
u
p
lin
g
r
ed
u
ctio
n
,
T
ef
lo
n
AF
1
6
0
0
d
em
o
n
s
tr
ates
b
etter
s
u
p
p
r
ess
io
n
o
f
cr
o
s
s
-
co
u
p
led
n
o
is
e
in
th
is
s
etu
p
an
d
f
r
eq
u
en
c
y
r
an
g
e,
d
u
e
to
its
s
tab
le
d
ielec
tr
ic
p
r
o
p
e
r
ties
an
d
h
i
g
h
e
r
b
r
ea
k
d
o
wn
s
tr
en
g
th
f
o
r
a
s
ta
ck
ed
lin
er
s
tr
u
ctu
r
e
at
1
T
Hz.
Fig
u
r
e
8
.
E
lectr
ic
p
o
ten
tial v
ar
iatio
n
alo
n
g
t
h
e
ar
c
b
etwe
en
a
g
g
r
ess
o
r
an
d
v
ictim
T
SVs
f
o
r
v
ar
io
u
s
d
ielec
tr
ics
(
SiO₂,
B
C
B
,
Per
y
len
e
-
N,
an
d
T
ef
lo
n
AF 1
6
0
0
)
i
n
a
s
tack
ed
-
lin
er
T
SV a
t 1
T
Hz
5.
CO
NCLU
SI
O
N
T
h
e
s
tu
d
y
o
n
r
e
d
u
cin
g
n
o
is
e
co
u
p
lin
g
in
3
D
I
C
s
th
r
o
u
g
h
d
ielec
tr
ic
lin
er
s
elec
tio
n
h
i
g
h
li
g
h
ts
clea
r
ad
v
an
tag
es
f
o
r
lo
w
-
k
m
ater
ial
s
—
n
am
ely
,
T
ef
lo
n
AF
1
6
0
0
,
B
C
B
,
an
d
Per
y
len
e
-
N
—
o
v
e
r
Sio
₂.
T
h
e
s
tu
d
y
is
p
r
im
ar
ily
s
im
u
latio
n
-
b
ased
w
ith
lim
ited
e
x
p
er
im
en
tal
v
ali
d
atio
n
.
I
t
c
o
n
s
id
er
s
a
r
estricte
d
s
et
o
f
d
ielec
tr
ic
m
ater
ials
an
d
id
ea
lized
T
SV
s
tr
u
ctu
r
es.T
h
er
m
al
–
elec
tr
ical
c
o
u
p
lin
g
an
d
lar
g
e
-
s
ca
le
T
SV
a
r
r
ay
ef
f
ec
ts
ar
e
n
o
t
f
u
lly
ex
p
lo
r
ed
.
An
aly
s
in
g
s
in
g
le
-
lin
er
an
d
s
tack
ed
-
lin
e
r
T
h
r
o
u
g
h
-
Sili
co
n
Via
s
tr
u
ctu
r
es
f
r
o
m
1
GHz
to
1
T
Hz
s
h
o
ws
th
at
d
ielec
tr
ic
s
elec
tio
n
s
ig
n
if
ican
tly
in
f
lu
en
ce
s
ca
p
ac
itiv
e
co
u
p
lin
g
an
d
s
ig
n
al
in
teg
r
ity
.
At
1
0
GHz
,
a
s
in
g
le
-
lin
er
with
SiO₂
p
r
o
v
id
es
o
n
ly
m
o
d
est
n
o
is
e
r
ed
u
ctio
n
,
wh
er
ea
s
s
tack
ed
-
lin
er
co
n
f
ig
u
r
atio
n
s
with
T
ef
lo
n
AF
1
6
0
0
y
iel
d
s
u
b
s
tan
tial
en
h
an
ce
m
e
n
ts
,
ac
h
iev
i
n
g
a
3
3
.
3
%
n
o
is
e
r
ed
u
ctio
n
an
d
an
8
.
4
0
d
B
atten
u
atio
n
.
At
1
T
Hz,
th
e
b
en
ef
its
o
f
T
ef
lo
n
AF
1
6
0
0
a
r
e
ev
en
m
o
r
e
a
p
p
ar
en
t,
with
u
p
to
4
4
.
4
%
n
o
is
e
r
ed
u
ctio
n
a
n
d
a
1
2
.
0
4
d
B
d
ec
r
ea
s
e
in
atten
u
atio
n
in
s
tack
e
d
-
lin
er
lay
o
u
ts
.
T
h
ese
r
esu
lts
s
u
g
g
est
th
at
s
tack
ed
-
lin
er
T
SVs
with
o
p
tim
is
ed
d
i
elec
tr
ic
lay
er
in
g
o
f
f
er
s
u
p
er
io
r
is
o
latio
n
an
d
f
ield
co
n
f
in
em
en
t,
o
u
tp
e
r
f
o
r
m
in
g
s
in
g
le
-
lin
er
d
esig
n
s
.
Ov
er
all,
lo
w
-
k
d
ielec
tr
ics,
esp
ec
ially
T
ef
lo
n
AF
1
6
0
0
,
p
r
o
v
e
to
b
e
h
ig
h
ly
ef
f
ec
tiv
e
is
o
latio
n
m
ater
ials
f
o
r
3
D
I
C
s
,
im
p
r
o
v
i
n
g
s
ig
n
al
i
n
teg
r
ity
b
y
r
ed
u
cin
g
ca
p
ac
itiv
e
co
u
p
lin
g
an
d
cr
o
s
s
talk
.
T
ef
lo
n
AF
1
6
0
0
co
n
s
is
ten
tly
d
eliv
er
s
b
etter
n
o
is
e
s
u
p
p
r
ess
io
n
an
d
atten
u
atio
n
ac
r
o
s
s
v
ar
i
o
u
s
co
n
f
ig
u
r
atio
n
s
,
h
ig
h
lig
h
tin
g
its
p
o
ten
tial f
o
r
n
e
xt
-
g
en
er
atio
n
h
ig
h
-
f
r
e
q
u
en
c
y
3
D
in
teg
r
atio
n
.
F
UNDING
I
NF
O
R
M
A
T
I
O
N
No
f
u
n
d
in
g
was r
ec
eiv
e
d
f
o
r
t
h
is
wo
r
k
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J I
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f
&
C
o
m
m
u
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T
ec
h
n
o
l
I
SS
N:
2252
-
8
7
7
6
Desig
n
a
n
d
a
n
a
lysi
s
o
f lo
w
-
k
d
iel
ec
tr
ic
TS
V
lin
ers
fo
r
n
o
is
e
… (
P
a
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a
k
u
n
ta
Gu
r
u
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r
a
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a
p
R
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d
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)
1195
AUTHO
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CO
NT
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B
UT
I
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NS ST
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M
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h
is
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u
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les
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ax
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m
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(
C
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ed
iT)
to
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in
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au
th
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,
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ed
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th
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s
h
ip
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tes,
an
d
f
ac
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llab
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Na
m
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Aut
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Vi
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Fu
Path
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C
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DATA
AV
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Data
a
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d
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.
RE
F
E
R
E
NC
E
S
[
1
]
D
.
P
r
a
g
a
t
h
i
e
t
a
l
.
,
“
S
i
m
p
l
i
st
i
c
a
p
p
r
o
a
c
h
t
o
a
l
l
e
v
i
a
t
e
n
o
i
se
c
o
u
p
l
i
n
g
i
ss
u
e
s
i
n
3
D
I
C
i
n
t
e
g
r
a
t
i
o
n
,
”
M
a
t
e
ri
a
l
s
T
o
d
a
y
:
Pr
o
c
e
e
d
i
n
g
s
,
v
o
l
.
3
3
,
p
p
.
4
0
0
7
–
4
0
1
1
,
2
0
2
0
,
d
o
i
:
1
0
.
1
0
1
6
/
j
.
ma
t
p
r
.
2
0
2
0
.
0
6
.
3
8
0
.
[
2
]
Z.
Z
h
a
o
e
t
a
l
.
,
“
El
e
c
t
r
i
c
a
l
c
h
a
r
a
c
t
e
r
i
z
a
t
i
o
n
o
f
t
h
r
o
u
g
h
-
si
l
i
c
o
n
-
v
i
a
-
b
a
s
e
d
c
o
a
x
i
a
l
l
i
n
e
f
o
r
h
i
g
h
-
f
r
e
q
u
e
n
c
y
3
D
i
n
t
e
g
r
a
t
i
o
n
(
i
n
v
i
t
e
d
p
a
p
e
r
)
,
”
E
l
e
c
t
r
o
n
i
c
s
,
v
o
l
.
1
1
,
n
o
.
2
0
,
p
.
3
4
1
7
,
O
c
t
.
2
0
2
2
,
d
o
i
:
1
0
.
3
3
9
0
/
e
l
e
c
t
r
o
n
i
c
s
1
1
2
0
3
4
1
7
.
[
3
]
X
.
L
i
u
,
Z.
Z
h
u
,
Y
.
Y
a
n
g
,
F
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