Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application
Asmaa Nur Aqilah Zainal Badri
Norlaili Mohd Noh
Shukri bin Korakkottil Kunhi Mohd
Asrulnizam Abd Manaf
Arjuna Marzuki
Mohd Tafir Mustaffa
Mohamed Fauzi Packeer Mohamed
Indonesian Journal of Electrical Engineering and Computer Science
Abstract
Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NFmin) for frequencies below 3 GHz.
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